CN114121584A - Lower electrode assembly, semiconductor processing equipment and lower electrode condensation preventing method - Google Patents
Lower electrode assembly, semiconductor processing equipment and lower electrode condensation preventing method Download PDFInfo
- Publication number
- CN114121584A CN114121584A CN202111388731.4A CN202111388731A CN114121584A CN 114121584 A CN114121584 A CN 114121584A CN 202111388731 A CN202111388731 A CN 202111388731A CN 114121584 A CN114121584 A CN 114121584A
- Authority
- CN
- China
- Prior art keywords
- temperature
- base
- cooling
- lower electrode
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009833 condensation Methods 0.000 title claims abstract description 43
- 230000005494 condensation Effects 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000012545 processing Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 159
- 238000005057 refrigeration Methods 0.000 claims abstract description 117
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 239000002826 coolant Substances 0.000 claims description 31
- 238000004891 communication Methods 0.000 claims description 9
- 230000033228 biological regulation Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 33
- 230000001276 controlling effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 239000007788 liquid Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000000112 cooling gas Substances 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a lower electrode assembly, semiconductor processing equipment and a lower electrode condensation preventing method, wherein the lower electrode assembly is arranged in a reaction chamber of the semiconductor processing equipment and comprises: the base is used for being connected to the inner wall of the reaction chamber; the bearing structure is used for bearing the wafer, is connected to the base and encloses an electrode inner cavity together with the base; the refrigeration pipeline is positioned in the electrode inner cavity and matched with the bearing structure to cool the electrode inner cavity; the cooling structure is matched with the base to cool the electrode inner cavity, the electrode inner cavity is cooled indirectly through cooling of the base, the temperature of the inner cavity of the electrode inner cavity is smaller than or equal to the temperature of the pipe wall of the refrigeration pipeline, or the temperature of the pipe wall of the refrigeration pipeline is larger than the temperature of the pipe wall of the refrigeration pipeline, the temperature difference between the temperature of the pipe wall and the temperature of the pipe wall is smaller than or equal to a first preset threshold value, and therefore moisture contained in gas in the electrode inner cavity is prevented from being condensed at the refrigeration pipeline, and the electrode assembly and related equipment of the electrode assembly can be safely and normally used.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a lower electrode assembly, semiconductor processing equipment and a lower electrode condensation preventing method.
Background
The microstructure manufactured by the deep silicon etching technology has important application in the fields of micro-electro-mechanical systems, micro-fluid devices, advanced packaging and the like, and a lower electrode is one of key parts in process equipment for performing deep silicon etching.
The existing bottom electrode comprises a base, a bearing structure and a refrigerating system. The bearing structure is arranged at the top of the base and encloses an electrode inner cavity together with the base, the bearing structure is used for bearing the wafer, and a refrigeration pipeline of the refrigeration system can stretch into the electrode inner cavity of the lower electrode and is communicated with the bearing structure to cool the bearing structure in the process. However, in the process of the process, a large amount of condensed liquid often appears in the electrode inner cavity of the lower electrode, and the condensed liquid is accumulated for a long time to affect and even damage electrical components such as sensors, power supply wiring and the like in the electrode inner cavity, so that great potential safety hazards exist.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides a lower electrode assembly, semiconductor processing equipment and a lower electrode condensation preventing method.
In a first aspect, the present invention provides a lower electrode assembly for disposition in a reaction chamber of a semiconductor processing apparatus, the lower electrode assembly comprising: the base is used for being connected to the inner wall of the reaction chamber; the bearing structure is used for bearing the wafer, is connected to the base and encloses an electrode inner cavity together with the base; the refrigeration pipeline is positioned in the electrode inner cavity and matched with the bearing structure to cool the electrode inner cavity; the cooling structure is matched with the base to cool the electrode inner cavity, the electrode inner cavity is cooled indirectly through cooling of the base, the temperature of the inner cavity of the electrode inner cavity is smaller than or equal to the temperature of the pipe wall of the refrigeration pipeline, or the temperature of the pipe wall of the refrigeration pipeline is larger than or equal to the temperature difference of the pipe wall of the refrigeration pipeline and the temperature difference of the pipe wall of the refrigeration pipeline, and therefore condensation of moisture contained in gas in the electrode inner cavity at the refrigeration pipeline is prevented.
Further, cooling structure includes cooling channel, and cooling channel is including seting up the inside intermediate layer passageway in base, and cooling structure still includes the import and the export of setting on the outer wall of base, and import and export all communicate with intermediate layer passageway to make coolant can flow into to intermediate layer passageway in and flow out by the export by the import.
Further, the base includes the base main part and connects the fixed part on the base main part, fixed part protrusion in the outer wall of base main part, the fixed part is used for connecting on reaction chamber's inner wall in order to fix the base, the electrode inner chamber is including forming in the inboard inner chamber main part of base main part and forming in the inboard passageway of wearing to establish of fixed part, inner chamber main part with wear to establish the passageway intercommunication, it is used for wearing to establish the refrigeration pipeline at least to wear to establish the passageway, cooling channel is including the induction zone that connects gradually, ring segment and export section, induction zone and export section are located the fixed part, the ring segment is located the base main part, and the ring segment extends along the circumferential direction of inner chamber main part.
Further, the base body part comprises an annular side wall part, above which the carrier structure is connected, and a bottom wall part connected below the annular side wall part, wherein the cooling channel is located on the annular side wall part and/or the bottom wall part.
Further, when the cooling passage is located on the annular side wall portion, a dimension of a longitudinal section of the cooling passage in an axial direction of the annular side wall portion is larger than a maximum dimension in a radial direction of the annular side wall portion; when the cooling passage is located on the bottom wall portion, a dimension of a longitudinal section of the cooling passage in a radial direction of the annular side wall portion is larger than a maximum dimension in an axial direction of the annular side wall portion.
Further, the cooling structure is used for communicating with the cold source and forming a cooling loop, and the lower electrode assembly further comprises: the first temperature measuring device is used for measuring the temperature of the pipe wall of the refrigeration pipeline; the second temperature measuring device is used for measuring the temperature in the cavity of the electrode cavity; the controller is in communication connection with the first temperature measuring device, the second temperature measuring device and the cold source, and the controller controls the cold source to adjust the cavity temperature of the inner cavity of the electrode according to the measured tube wall temperature and the measured cavity temperature, so that the adjusted cavity temperature is smaller than or equal to the tube wall temperature, or the adjusted cavity temperature is larger than the tube wall temperature, the temperature difference between the adjusted cavity temperature and the adjusted tube wall temperature is smaller than or equal to a second preset threshold value, and the moisture contained in the gas in the inner cavity of the electrode is prevented from being condensed at a refrigerating pipeline.
Further, the cooling structure is used for communicating with the cold source and forming a cooling loop, and the lower electrode assembly further comprises: the first temperature measuring device is used for measuring the temperature of the pipe wall of the refrigeration pipeline; a third temperature measuring device for measuring the base temperature of the base; the controller is in communication connection with the first temperature measuring device, the third temperature measuring device and the cold source, and the controller controls the cold source to adjust the temperature of the base according to the measured temperature of the pipe wall and the measured temperature of the base, so that the adjusted temperature of the base is smaller than or equal to the temperature of the pipe wall, or the adjusted temperature of the base is larger than the temperature of the pipe wall, the temperature difference between the adjusted temperature of the pipe wall and the adjusted temperature of the pipe wall is smaller than or equal to a third preset threshold value, and condensation of moisture contained in gas in the inner cavity of the electrode at a refrigeration pipeline is prevented.
Furthermore, the refrigeration pipeline comprises an input pipeline section and a return pipeline section, the input pipeline section, the bearing structure and the return pipeline section are sequentially communicated, so that cooling media flow into the bearing structure from the input pipeline section and flow out from the return pipeline section, and the temperature of the pipe wall of the input pipeline section is used as the temperature of the pipe wall of the refrigeration pipeline.
Further, the base includes an annular sidewall portion above which the load bearing structure is attached and a bottom wall portion connected below the annular sidewall portion, the cooling structure cooperating with the annular sidewall portion.
In a second aspect, the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber and a lower electrode assembly disposed in the reaction chamber, wherein the lower electrode assembly is the above-mentioned lower electrode assembly.
In a third aspect, the present invention further provides a bottom electrode condensation preventing method applied to the above bottom electrode assembly, where the bottom electrode condensation preventing method includes: the base is cooled to indirectly cool the inner cavity of the electrode, so that the temperature in the inner cavity of the electrode is less than or equal to the temperature of the pipe wall of the refrigerating pipeline, or the temperature is greater than the temperature of the pipe wall of the refrigerating pipeline, and the temperature difference between the temperature and the temperature is less than or equal to a first preset threshold value, and therefore condensation of moisture contained in gas in the inner cavity of the electrode at the refrigerating pipeline is prevented.
Further, the method comprises the following steps: cooling the base through a cooling structure communicated with the cold source; measuring the temperature of the pipe wall of the refrigeration pipeline; measuring the intracavity temperature of the electrode cavity; and controlling the cold source to adjust the temperature in the cavity of the electrode according to the measured temperature of the tube wall and the temperature in the cavity, so that the adjusted temperature in the cavity is less than or equal to the temperature of the tube wall, or is greater than the temperature of the tube wall, and the temperature difference between the temperature of the tube wall and the temperature of the cavity is less than or equal to a second preset threshold, thereby preventing the moisture contained in the gas in the cavity of the electrode from being condensed at a refrigeration pipeline.
Further, the method comprises the following steps: cooling the base through a cooling structure communicated with the cold source; measuring the temperature of the pipe wall of the refrigeration pipeline; measuring a susceptor temperature of the susceptor; and controlling the cold source to adjust the temperature of the base according to the measured temperature of the pipe wall and the measured temperature of the base, so that the adjusted temperature of the base is less than or equal to the temperature of the pipe wall, or is greater than the temperature of the pipe wall, and the temperature difference between the temperature of the pipe wall and the temperature of the base is less than or equal to a third preset threshold, and further, the condensation of moisture contained in the gas in the inner cavity of the electrode at a refrigeration pipeline is prevented.
The invention has the following beneficial effects:
the lower electrode assembly provided by the invention cools the base through the cooling structure, and the temperature of the inner cavity of the electrode in the lower electrode assembly can be directly influenced by the temperature of the base, so that the inner cavity of the electrode can be indirectly cooled through cooling the base.
On one hand, the temperature in the cavity of the electrode inner cavity can be reduced to be less than or equal to the temperature of the pipe wall of the refrigeration pipeline in such a way, namely, the temperature in the cavity of the electrode inner cavity (gas temperature) is lower than the temperature of the pipe wall of the refrigeration pipeline or is the same as the temperature of the pipe wall of the refrigeration pipeline, so that the moisture contained in the gas is prevented from being condensed at the refrigeration pipeline;
on the other hand, the cavity temperature of the electrode cavity can be reduced to be closer to the tube wall temperature although being higher than the tube wall temperature of the refrigeration pipeline, and whether the temperature is closer can be judged by comparing the temperature difference between the two temperatures with the first preset threshold value, namely, the cavity temperature (gas temperature) of the electrode cavity is higher than the tube wall temperature of the refrigeration pipeline, and the temperature difference between the two temperatures is smaller than or equal to the first preset threshold value. The determination standard of the "first preset threshold" is that when the temperature difference between the temperature (gas temperature) in the cavity of the electrode and the temperature of the tube wall of the refrigeration pipeline is less than or equal to the first preset threshold, the moisture contained in the gas in the cavity of the electrode is not condensed at the refrigeration pipeline.
Therefore, the mode can effectively avoid the occurrence of condensed liquid on the pipe wall of the refrigeration pipeline, thereby ensuring that the lower electrode assembly and related equipment can be safely and normally used.
Drawings
FIG. 1 is a schematic cross-sectional view of a lower electrode in the prior art;
FIG. 2 is a schematic cross-sectional view of a lower electrode of the prior art after being mounted in a reaction chamber;
FIG. 3 is a schematic cross-sectional view of a lower electrode assembly according to one embodiment of the present invention;
FIG. 4 is a cross-sectional structural view of the base, electrode lumen, and cooling channel of the lower electrode assembly of FIG. 3, wherein arrows indicate the flow of cooling medium in the cooling channel;
FIG. 5 is a schematic cross-sectional view of the susceptor, electrode lumen and cooling channel A-A of FIG. 4;
FIG. 6 is a schematic view of the fixing portion of the base of FIG. 4 with an inlet and an outlet;
FIG. 7 is a schematic flow chart of a lower electrode condensation preventing method according to an embodiment of the present invention;
fig. 8 is a flow chart illustrating a method for preventing condensation of the lower electrode according to another embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the lower electrode assembly, the semiconductor processing apparatus and the lower electrode condensation preventing method provided by the present invention will be described in detail below with reference to the accompanying drawings.
Aiming at the reason that condensed liquid appears in the electrode inner cavity of the existing lower electrode, the inventor conducts long-term research and finally finds that the temperature of the base of the lower electrode and the temperature of the electrode inner cavity are high when the process is conducted, the temperature of the pipe wall of a refrigeration pipeline of a refrigeration system is low, and moisture contained in gas in the electrode inner cavity can be condensed to form a large amount of liquid after contacting the pipe wall of the refrigeration pipeline.
Specifically, as shown in fig. 1 and 2, the conventional bottom electrode includes a base 1 and a carrying structure, the base 1 is hollow and has an open top, the carrying structure is disposed on the top of the base 1 and encloses an electrode cavity together with the base 1, and the carrying structure is used for carrying a wafer.
Wherein, the bottom electrode is located in the reaction chamber 2, and the base 1 is connected with the inner wall of the reaction chamber 2, so as to realize the installation and fixation of the bottom electrode and the reaction chamber 2. Specifically, the reaction chamber 2 includes a housing 3 having a side opening and a cover plate 4 covering the side opening, both of which enclose an inner chamber space after being assembled, an inner side of the cover plate 4 forms a part of an inner wall of the reaction chamber 2, and the base 1 is connected to the cover plate 4.
The bearing structure comprises an electrostatic disk 5 and an interface disk 6, wherein the upper surface of the electrostatic disk 5 is exposed out of the reaction chamber 2, a wafer is placed on the upper surface of the electrostatic disk 5, and the interface disk 6 is connected below the electrostatic disk 5. In addition, the lower electrode also comprises a refrigerating system, a refrigerating pipeline of the refrigerating system can stretch into an electrode inner cavity of the lower electrode and is introduced into the bearing structure to cool the bearing structure in the process, and the temperature of the pipe wall of the refrigerating pipeline for cooling in the electrode inner cavity is relatively low.
Taking the cooling of the electrostatic disk 5 of the bearing structure through the refrigeration pipeline as an example, the refrigeration pipeline comprises an input pipe 7 and a return pipe 8, cooling medium flows into the electrostatic disk 5 through the input pipe 7 and the interface disk 6, takes away heat of the electrostatic disk 5 through heat exchange with the electrostatic disk, and flows out through the return pipe 8 to complete the cooling of the electrostatic disk 5. The working temperature of the electrostatic disk 5 is generally, but not exclusively, in the range-10 c to 35 c, and in some extreme cases the extreme temperature of the electrostatic disk 5 may be in the range-20 c to 40 c. The temperature of the pipe wall of the refrigeration pipeline is not greatly different from the temperature of the electrostatic disk 5, for example, the temperature range of the cooling medium introduced into the refrigeration pipeline can be between-10 ℃ and 35 ℃.
When the process is performed, the temperature of the reaction chamber 2 is about 100 ℃, and since the susceptor 1 of the lower electrode is coupled to the inner wall of the reaction chamber 2, heat is transferred to the susceptor 1 to make the temperature of the susceptor 1 close to that of the reaction chamber 2, i.e., about 100 ℃, which results in a relatively high temperature in the inner cavity of the electrode. The inner cavity of the electrode is in an atmospheric state, and the temperature of the gas can reach more than 60 ℃. And after the moisture (namely gaseous water molecules) contained in the gas contacts the pipe wall of the refrigeration pipeline with lower temperature, the moisture can be condensed into a large amount of liquid and be attached to the pipe wall. After long-term accumulation, the sensor, the power supply wiring and other electrical components in the electrode cavity are affected and even damaged, and great potential safety hazards exist.
The invention provides a lower electrode assembly which is arranged in a reaction chamber of semiconductor processing equipment, the interior of the reaction chamber can be in a vacuum state, a wafer is placed on a bearing surface of the lower electrode assembly, and processing, such as etching processing, is carried out in the reaction chamber.
As shown in fig. 3, in some embodiments, the lower electrode assembly includes a base 10 and a carrier structure 20, the carrier structure 20 being attached to the base 10 and enclosing an electrode cavity 50 with the base 10. The carrying structure 20 is used for carrying wafers. In the specific embodiment shown in the figures, the base 10 is hollow and open at the top, the bearing structure 20 is arranged on the top of the base 10 and encloses an electrode cavity 50 together with the base 10, and the interior of the electrode cavity 50 is in an atmospheric state. The carrier structure 20 includes an electrostatic disk 21 and an interface disk 22. One side of the electrostatic disk 21, which is away from the electrode cavity 50, is exposed in the reaction chamber and forms the carrying surface for carrying the wafer, and the electrostatic disk 21 performs adsorption positioning on the wafer through electrostatic force. The interface disc 22 is disposed below the electrostatic disc 21 and is used for supplying radio frequency, power, and the like to the electrostatic disc 21.
In addition, the lower electrode assembly further includes an insulating ring 30 and a heat insulating ring 40, the insulating ring 30 and the heat insulating ring 40 are disposed between the interface disk 22 and the base 10, and the insulating ring 30 is located above the heat insulating ring 40. The insulating ring 30 is in contact with the electrostatic disk 21 and the interface disk 22 and serves to support the interface disk 22. The thermal isolation ring 40 is located between the insulating ring 30 and the susceptor 10 to achieve thermal isolation between the susceptor 10 and its upper structure (e.g., the electrostatic disk 21, the insulating ring 30, etc.). Among them, the insulating ring 30 is made of an insulating material such as quartz, ceramic, silicon nitride, etc.; the heat insulating ring 40 is made of a heat insulating material, such as polyetherimide plastic.
In some embodiments, the susceptor 10 is used to be attached to the inner wall of the reaction chamber, that is, the lower electrode assembly is fixedly mounted to the reaction chamber by the connection between the susceptor 10 and the inner wall of the reaction chamber. The connection manner between the susceptor 10 and the inner wall of the reaction chamber is not limited, and for example, the susceptor 10 may be connected to the inner wall corresponding to the immovable portion of the housing forming the reaction chamber 2; alternatively, the reaction chamber includes a housing having a side opening and a cover plate covering the side opening, the housing and the cover plate enclosing an inner chamber space after being assembled, the inner side of the cover plate forms a part of the inner wall of the reaction chamber, the base 10 may also be connected to the inner side of the cover plate, the lower electrode assembly is integrally mounted on the cover plate, and the lower electrode assembly and the cover plate can be operated together when the cover plate is assembled or disassembled (see the manner of matching the lower electrode and the reaction chamber in the prior art in fig. 2).
Further, the lower electrode assembly further comprises a refrigeration pipeline 60, and the refrigeration pipeline 60 is located in the electrode inner cavity 50 and is matched with the bearing structure 20 to cool the electrode inner cavity. Here, the "refrigeration circuit" refers to any circuit through which a cooling medium for cooling the carrying structure 20 flows, and is not limited to a source of the cooling medium, a type of the cooling medium, a device upstream of the refrigeration circuit, and the like. For example, the refrigeration pipeline may be a refrigeration section of a circulation pipeline in a refrigeration system, in this case, other devices (such as a compressor, a high-pressure pump, a heat exchanger, a heat dissipation device, and other structures) in a circulation loop of the refrigeration system may be disposed outside the lower electrode assembly and the reaction chamber, and the cooling medium may be a cooling liquid or a cooling gas.
It should be noted that the cooling circuit 60 mainly cools the electrostatic disk 21 of the carrying structure 20. The manner in which refrigeration circuit 60 is mated to load-bearing structure 20 is not limited. For example, the refrigeration circuit 60 may penetrate through the interface disc 22 and be disposed on the surface of the electrostatic disc 21 and contact and exchange heat with the electrostatic disc 21; or, a cooling flow channel is provided in the electrostatic disk 21, the refrigeration pipeline 60 includes an input pipe and a return pipe, the input pipe and the return pipe are respectively communicated with two ends of the cooling flow channel, the cooling medium is conveyed into the cooling flow channel through the input pipe for heat exchange, and the cooling medium after heat exchange flows out through the return pipe.
When the process is performed, the temperature of the cooling medium in the refrigeration circuit 60 is relatively low, that is, the temperature of the tube wall of the refrigeration circuit 60 is relatively low, which requires the cooling of the carrying structure 20 by the refrigeration circuit 60. Taking the cooling of the electrostatic disk 21 as an example, the working temperature range of the electrostatic disk 21 in a general case (non-limiting case) needs to be in a range from-10 ℃ to 35 ℃ (the limiting temperature range in the limiting case may be in a range from-20 ℃ to 40 ℃), and the temperature of the tube wall of the refrigeration pipeline 60 in the electrode cavity 50 is not much different from the temperature of the electrostatic disk 21, for example, the temperature range of the cooling medium introduced into the refrigeration pipeline 60 may be in a range from-10 ℃ to 35 ℃.
While the temperature of the reaction chamber is relatively high, e.g., about 100 c, while the process is in progress. If not intervened, since the susceptor 10 of the lower electrode assembly is coupled to the inner wall of the reaction chamber, heat of the reaction chamber is transferred to the susceptor 10, and particularly, when the susceptor 10 is formed of a metal material for strength and processing difficulty, the thermal conductivity of the susceptor 10 is high, so that the temperature of the susceptor 10 is close to that of the reaction chamber, for example, about 100 ℃, which results in a relatively high temperature in the electrode cavity 50. The electrode chamber 50 is at atmospheric pressure and the gas temperature in the electrode chamber 50 is at a higher level, for example, up to 60 c, although it will be slightly lower than the temperature of the susceptor 10. Moisture (i.e., gaseous water molecules) contained in the gas in the electrode cavity 50 may be condensed to form liquid on the tube wall of the refrigeration tube 60 after contacting the tube wall with a low temperature.
Therefore, the present invention adopts a cooling structure to cool the base 10 and indirectly cool the electrode cavity 50, so as to effectively prevent the condensed liquid from appearing on the tube wall of the refrigeration pipeline 60, and ensure that the lower electrode assembly and the semiconductor processing equipment can be safely and normally used.
Specifically, the cooling structure cooperates with the base 10 to cool it, and since the temperature of the base 10 directly affects the temperature of the electrode cavity 50 therein, the electrode cavity 50 can be indirectly cooled by cooling the base 10.
On one hand, the cavity temperature of the electrode cavity 50 can be reduced to be less than or equal to the tube wall temperature of the refrigeration tube 60 in this way, that is, the cavity temperature (gas temperature) of the electrode cavity 50 is lower than the tube wall temperature of the refrigeration tube 60 or equal to the tube wall temperature of the refrigeration tube 60, so that the moisture contained in the gas is prevented from being condensed at the refrigeration tube 60.
On the other hand, the cavity temperature of the electrode cavity 50 may be reduced to be closer to the tube wall temperature although being greater than the tube wall temperature of the refrigeration tube 60, and whether "closer" is determined by comparing the temperature difference between the two temperatures with the first preset threshold, that is, the cavity temperature (gas temperature) of the electrode cavity 50 is greater than the tube wall temperature of the refrigeration tube 60, and the absolute value of the temperature difference between the two temperatures is less than or equal to the first preset threshold. The "first preset threshold" is determined according to a criterion that, when a temperature difference between a cavity temperature (gas temperature) of the electrode cavity 50 and a tube wall temperature of the refrigeration pipeline 60 is less than or equal to the first preset threshold, moisture contained in the gas in the electrode cavity 50 is not condensed at the refrigeration pipeline 60. The specific manner of obtaining the value of the "first preset threshold" may be various, and for example, the specific manner may be obtained by testing the lower electrode assembly with the same configuration under the same use environment (as in a reaction chamber); alternatively, environmental characteristics such as humidity in the electrode lumen 50 may be analyzed and theoretically calculated, and so forth. In some embodiments, the first preset threshold may be greater than or equal to 2 ℃ and less than or equal to 5 ℃, in particular, the first preset threshold may be selected to be 5 ℃, preferably 3 ℃.
It should be noted that the specific form of the cooling structure is not limited, and it may be any form capable of cooling the susceptor 10. For example, the cooling structure may be in a form of heat exchange by a flowing cooling medium, or in a form of heat absorption material wrapping the susceptor 10 to absorb heat for cooling.
As shown in fig. 3 to 6, in some embodiments, the cooling structure includes a cooling channel 71, and the cooling channel 71 is used for conveying a cooling medium to cool the susceptor 10 by the cooling medium. The cooling channel 71 needs to be communicated with an external cold source, and the cooling medium can be cooling liquid or cooling gas. The cold source may be temperature controlled by controlling the temperature and/or flow of the cooling medium within the cold source to control the temperature of the base 10, thereby controlling the temperature within the electrode cavity 50. In other words, the cooling channels 71 are cooled by introducing a cooling medium, so that the temperature can be controlled relatively accurately.
The cooling channel 71 may form a circulation loop with the cold source, or may form an open loop with the cold source (the cooling medium is not circulated). The position of the cold source is not limited, and the cold source can be at least partially positioned in the inner cavity 50 of the electrode; or at least partially in the reaction chamber. However, in general, the cooling source needs to be disposed outside the reaction chamber for easy arrangement and control, for example, the cooling channel 71 passes through the portion of the susceptor 10 connected to the inner wall of the reaction chamber to the outside of the whole.
As shown in fig. 3-6, in some embodiments, the cooling channels 71 comprise sandwiched channels that open inside the base 10. By "sandwich channel" is meant a channel disposed within the solid structure of the base 10, or it is understood that the base 10 includes an outer sidewall and an inner sidewall connected together, the inner sidewall forming a wall of the electrode lumen 50, the outer and inner sidewalls being spaced apart to form the sandwich channel. The cooling structure further comprises an inlet 72 and an outlet 73 arranged on the outer wall of the base 10, wherein the inlet 72 and the outlet 73 are both communicated with the sandwich channel, and the inlet 72 and the outlet 73 are used for being communicated with the cold source, so that the cooling medium can flow into the sandwich channel from the inlet 72 and flow out from the outlet 73. That is to say, the cooling medium in the cold source can enter into the inside of the solid structure of base 10 itself and carry out the heat transfer, and the cooling effect is better.
It should be noted that the manner of forming the cooling channel 71 is not limited to this, and in other embodiments not shown in the drawings, the cooling channel 71 may be formed in other manners. For example, the cooling structure includes a cooling pipe, which may be disposed on an inner surface or an outer surface of the susceptor 10, and a pipe inner space of the cooling pipe forms the cooling passage 71, and cooling is achieved by contact heat exchange of the cooling pipe with the surface of the susceptor 10.
Further, as shown in fig. 3-5, the cooling channels 71 are disposed adjacent to the walls of the electrode lumen 50, which enhances the cooling of the electrode lumen 50 and the gas therein. In the particular embodiment shown in the figures, the sandwich channel opening out inside the susceptor 10 forms at least part of the cooling channel 71, with the expression "the cooling channel 71 is close to the wall of the electrode lumen 50" meaning that, for any position of the cooling channel 71, the distance between the center of the cooling channel 71 and the wall of the electrode lumen 50 in the radial direction of the electrode lumen 50 should be smaller than the distance between the center of the cooling channel 71 and the outer wall of the susceptor 10. Theoretically, the closer the cooling channel 71 is to the wall of the electrode lumen 50, the better the cooling effect. However, the wall thickness between the cooling channel 71 and the electrode interior 50 cannot be too thin for reasons of strength of the base 10. Therefore, in the present embodiment, the distance between the channel wall of the cooling channel 71 on the side close to the electrode inner cavity 50 and the wall of the electrode inner cavity 50 is greater than or equal to 3mm and less than or equal to 7mm, preferably 5 mm.
Further, in other embodiments not shown in the figures, if the "cooling channel 71 is proximate to a wall of the electrode lumen 50" in the case where the cooling channel 71 is formed within the cooling tube, the cooling tube can be considered to be disposed on and conform to the wall of the electrode lumen 50.
As shown in fig. 3 to 5, in some embodiments, at least part of the cooling channel 71 extends in the circumferential direction of the electrode cavity 50, which facilitates the arrangement, and in particular, when the cooling channel 71 is formed by forming a sandwich channel inside the solid structure of the substrate 10 itself, the cooling channel 71 extends in the circumferential direction of the electrode cavity 50, which also facilitates the processing. Preferably, the cooling channel 71 extends in the circumferential direction of the electrode cavity 50 and can surround the entire electrode cavity 50 or a large part of the electrode cavity 50, thereby increasing the cooling effect on the electrode cavity 50.
Of course, the arrangement of the cooling channel 71 is not limited to this, and in other embodiments not shown in the drawings, at least a portion of the cooling channel 71 may also extend along the axial direction of the electrode cavity 50, for example, the cooling channel 71 includes a plurality of straight sections extending along the axial direction of the electrode cavity 50 and an arc-shaped connecting section connected between two adjacent straight sections, the plurality of straight sections are arranged along the circumferential direction of the electrode cavity 50, and the arc-shaped connecting section connects the straight sections to form a flow path, that is, the cooling channel 71 is "serpentine".
As shown in fig. 4 to 6, in some embodiments, the base 10 includes a base main body portion and a fixing portion 11 connected to the base main body portion, and the fixing portion 11 protrudes from an outer wall of the base main body portion. The fixing portion 11 is for being coupled to an inner wall of the reaction chamber to fix the susceptor 10. For example, the end of the fixing portion 11 can be connected to a cover plate of the reaction chamber.
Further, the base main body portion includes an annular side wall portion 12 and a bottom wall portion 13 connected below the annular side wall portion 12, and the carrier structure 20 is connected above the annular side wall portion 12. The annular side wall part 12 and the bottom wall part 13 can be of a split structure and can be detachably connected; of course, it may be of unitary construction. In the embodiment shown in the figures, the fixing portion 11 is connected to an annular side wall portion 12, the annular side wall portion 12 being circular in cross section, the bottom wall portion 13 being circular, the fixing portion 11 being rectangular in cross section and in longitudinal section. Of course, it is understood that the shapes of the fixing portion 11, the annular side wall portion 12, and the bottom wall portion 13 are not limited thereto, and may be designed as necessary in other embodiments.
Preferably, in some embodiments, the cooling structure is coupled to the annular sidewall portion 12 (e.g., the cooling channel 71 is disposed on the annular sidewall portion 12), such that the cooling structure cools the electrode cavity 50 primarily around the circumference thereof. In the embodiment shown in the figures, the axial dimension of the annular side wall portion 12 is much greater than the axial dimension of the bottom wall portion 13, so that a large part of the electrode cavity 50 corresponds to the annular side wall portion 12, and the annular side wall portion 12 is mainly cooled by the cooling structure, which is beneficial to ensure the cooling effect. Of course, it will be understood that in other embodiments not shown in the figures, the cooling structure may also cooperate with the bottom wall portion 13; alternatively, the annular side wall portion 12 and the bottom wall portion 13 may be fitted together. It should be noted that in other embodiments than the one shown in the figures, the above-described arrangement of the cooling structure is equally applicable if the susceptor 10 comprises an annular side wall portion 12 and a bottom wall portion 13, instead of the fixing portion 11, i.e. the cooling structure cooperates with the annular side wall portion 12 and/or the bottom wall portion 13.
As shown in fig. 4-6, in some embodiments, the electrode lumen 50 includes a lumen body 51 formed inside the base body portion and a through passage 52 formed inside the fixation portion 11. The lumen body 51 communicates with the through passage 52. The through passage 52 may be used to pass through a refrigeration circuit 60. For example, the penetration passage 52 of the fixing portion 11 can communicate with the outside of the reaction chamber, so that the refrigeration line 60 passes through the penetration passage 52 to the outside of the reaction chamber. Of course, the through passage 52 can be used to penetrate other parts of the inner chamber body 51, such as lines and pipes, which need to be connected to the outside of the reaction chamber, besides the refrigeration pipeline 60.
The cooling channel 71 comprises an inlet section 711, an annular section 712 and an outlet section 713, which are connected in series. The inlet section 711 and the outlet section 713 are located on the fixed part 11. The ring segment 712 is located on the base body portion, and the ring segment 712 extends in the circumferential direction of the inner cavity body 51. The inlet 72 and the outlet 73 are provided on the end face of the fixing portion 11. The inlet 72 communicates with the inlet section 711 and the outlet 73 communicates with the outlet section 713. As shown by the arrows in fig. 4, the cooling medium flows in the inlet 72, the inlet section 711, the annular section 712, the outlet section 713, and the outlet 73. The cooling channel 71 is reasonably arranged according to the structure of the base 10, so that the processing and the manufacturing are convenient, the cooling medium can flow through the peripheral side of the whole electrode inner cavity 50, and the cooling effect is better.
It should be noted that in the illustrated embodiment, the annular section 712 is disposed on the annular sidewall 12, but in other embodiments, the annular section 712 may be disposed on the bottom wall 13. The base main body portion is not limited to the one including the annular side wall portion 12 and the bottom wall portion 13, and may have another structure in another embodiment not shown in the drawings.
As shown in fig. 3 and 5, in some embodiments, the cooling passage 71 is located on the annular sidewall portion 12, and the dimension of the longitudinal section of the cooling passage 71 in the axial direction of the annular sidewall portion 12 is larger than the largest dimension in the radial direction of the annular sidewall portion 12. Here, the "longitudinal section of the cooling passage 71" refers to a section of the cooling passage 71 which is exposed after being cut in the axial direction of the annular side wall portion 12 as shown in the drawing, and the area of the section may also be understood as an area of flow of the cooling passage 71, and the dimension of the section in the axial direction of the annular side wall portion 12 is larger than the maximum dimension in the radial direction of the annular side wall portion 12, and may also be understood as a shape of the longitudinal section of the cooling passage 71 which is elongated substantially extending in the axial direction of the annular side wall portion 12.
In the case where the flow area of the cooling passage 71 is the same, the cooling passage 71 having the above-described shape and position has a larger heat exchange area near the electrode cavity 50, so that the cooling effect is better. The shape of the longitudinal section of the cooling channel 71 may be rectangular, trapezoidal, triangular, oval, or the like. In the particular embodiment shown in the figures, the cooling channel 71 has a rectangular shape in longitudinal section, in particular, the inlet block 711, the ring block 712 and the outlet block 713 have a rectangular shape in longitudinal section, wherein the dimensions of the longitudinal sections of the inlet block 711 and the outlet block 713 are the same, the longitudinal section of the ring block 712 is slightly larger than the dimensions of the longitudinal sections of the ring block 712 and the outlet block 713, the longitudinal section of the ring block 712 has a width of 10mm and a height of 60 mm; in addition, the inlet 72 and the outlet 73 communicating with the inlet block 711 and the outlet block 713 are circular in longitudinal section.
In other embodiments, the cooling passage 71 is located on the bottom wall portion 13, and the dimension of the longitudinal section of the cooling passage 71 in the radial direction of the annular side wall portion 12 is larger than the largest dimension in the axial direction of the annular side wall portion 12. Likewise, it can be understood that the longitudinal cross-sectional shape of the cooling passage 71 is an elongated shape extending substantially in the radial direction of the annular side wall portion 12. In the case where the flow area of the cooling passage 71 is the same, the cooling passage 71 having the above-described shape and position has a larger heat exchange area near the electrode cavity 50, so that the cooling effect is better. The shape of the longitudinal section of the cooling channel 71 may be rectangular, trapezoidal, triangular, oval, or the like.
As shown in fig. 1 and 2, some conventional bottom electrodes are formed by wrapping heat insulation cotton on the wall of the refrigeration pipeline to isolate water in gas from contacting the wall of the refrigeration pipeline, thereby preventing condensation. In addition, a purging ring, a purging nozzle and other purging structures 9 can be arranged in the inner cavity of the electrode to purge the pipe wall of the refrigeration pipeline, so that the condensation prevention effect is enhanced. However, above-mentioned heat preservation is cotton and sweeps the structure and all set up in the inside of electrode inner chamber, if take place to miss or not miss, but the unable normal use that breaks down when the assembly, be difficult to be discovered by the staff. When found due to excessive condensation in the electrode lumen, the device often has failed and safety issues. Therefore, the above-mentioned condensation prevention method is less reliable.
To address this issue, in some embodiments of the present invention, the cooling structure (e.g., cooling channel 71) is configured to communicate with the cooling source and form a cooling circuit, and the lower electrode assembly further comprises a temperature measuring device and a controller, wherein the temperature measuring device is configured to measure at least a lumen temperature of the electrode lumen 50 and transmit the measurement result to the controller. Through the intracavity temperature of the mode perception electrode inner chamber 50 of the above-mentioned temperature measuring device that sets up, whether descend through this intracavity temperature, whether can descend to the scope that meets the requirements etc. as the reference, judge whether cooling structure is normal to the cooling of base 10, thereby make the staff discover easily that cooling structure assembles or adds the problem of being omitted man-hour, the manual operation fault factor has effectively been avoided, and also can pass through the timely discovery of temperature measurement result by the staff when cooling structure breaks down, the reliability is higher.
It should be noted that the temperature measuring device may measure the temperature inside the electrode cavity 50 in real time, or at certain specific times or intervals. The temperature measuring device may be used to measure the temperature of other parts, for example, the wall temperature of the refrigeration line 60, the base temperature of the base 10, and the like.
Further, in some embodiments, the temperature measuring device includes a first temperature measuring device for measuring a wall temperature of the refrigeration line 60 and a second temperature measuring device for measuring a cavity temperature of the electrode cavity 50. The specific types of the first temperature measuring device and the second temperature measuring device are not limited, and may be any device capable of measuring the temperature of the measured portion.
Preferably, the first temperature measuring device and the second temperature measuring device are both contact temperature measuring sensors, such as thermocouple sensors, thermal resistance sensors, and the like. At this time, the first temperature measuring device can be wound on the pipe wall of the refrigeration pipeline 60, so that the first temperature measuring device is attached to the pipe wall of the refrigeration pipeline 60 in a contact area as large as possible, and the temperature measurement accuracy is improved. The second temperature measuring device can penetrate into the inner space of the electrode inner cavity 50 from the cavity wall of the electrode inner cavity 50 and directly contact with the gas in the electrode inner cavity 50 to measure the temperature. In order to further ensure the anti-condensation effect, the temperature measuring end of the second temperature measuring device can extend to a position close to the refrigeration pipeline 60, so as to measure the temperature of the gas in the electrode inner cavity 50 near the refrigeration pipeline 60.
Of course, in other embodiments, the first temperature measuring device and/or the second temperature measuring device may also adopt a non-contact temperature measuring sensor, such as a radiation temperature measuring device, according to actual needs.
The controller is in communication connection with the first temperature measuring device, the second temperature measuring device and the cold source. The controller is according to above-mentioned pipe wall temperature and the intracavity temperature that obtains of measuring, and the control cold source is adjusted with the intracavity temperature to electrode inner chamber 50 to the intracavity temperature after making the regulation accords with the anti-condensation requirement, realizes the accurate control of intracavity temperature, guarantees the anti-condensation effect. Preferably, the second temperature measuring device measures the cavity temperature of the electrode cavity 50 in real time, so that the cavity temperature of the electrode cavity 50 can be monitored. In addition, the first temperature measuring device can also measure the temperature of the pipe wall of the refrigeration pipeline 60 in real time, and the second temperature measuring device is matched for measuring the temperature in the electrode cavity 50 in real time, so that the temperature in the electrode cavity 50 can be effectively controlled in real time.
The "anti-condensation requirement" means that the temperature in the chamber after adjustment is less than or equal to the temperature of the tube wall, or is greater than the temperature of the tube wall, and the temperature difference between the two temperatures is less than or equal to a second preset threshold, so as to prevent the moisture contained in the gas in the electrode chamber 50 from being condensed at the refrigeration pipeline 60.
The controlled cooling source is capable of directly regulating the base temperature of the base 10 and, in turn, indirectly regulating the chamber temperature of the electrode chamber 50. The realization mode of adjusting the temperature by controlling the cooling source is not limited, and the reasonable design can be carried out according to factors such as the specific structure of the cooling source, the type of the cooling medium and the like. For example, the base temperature of the base 10 can be controlled by controlling the temperature and/or flow rate of a cooling medium (e.g., a cooling fluid, a cooling gas, etc.) for the purpose of controlling the intra-cavity temperature of the electrode inner cavity 50.
When judging whether the adjusted temperature in the cavity meets the anti-condensation requirement, the adjusted temperature in the cavity needs to be compared with the temperature of the pipe wall. It should be noted that the "wall temperature" at this time may be the wall temperature of the refrigeration pipeline 60 measured by the first temperature measuring device before temperature adjustment is performed, that is, the "wall temperature" on which the temperature adjustment is performed by controlling the cold source; or the current wall temperature of the refrigeration circuit 60 measured by the first temperature measuring device at the current moment. In addition, the "second preset threshold" is determined according to a criterion that when the adjusted cavity temperature (gas temperature) is greater than the tube wall temperature and the temperature difference between the two temperatures is less than or equal to the second preset threshold, the moisture contained in the gas in the electrode cavity 50 is not condensed at the refrigeration pipeline 60. The specific value of the "second preset threshold" is obtained in the same manner as the "first preset threshold", and the specific value of the second preset threshold may be the same as or different from the first preset threshold.
As shown in fig. 3, in some embodiments, the lower electrode assembly further includes a first temperature measuring device (not shown) for measuring a wall temperature of the cooling pipe 60, and a third temperature measuring device 80 for measuring a base temperature of the base 10. The specific types of the first temperature measuring device and the third temperature measuring device 80 are not limited, and may be any device capable of measuring the temperature of the measured portion.
Preferably, the first temperature measuring device and the third temperature measuring device 80 are both contact temperature measuring sensors, such as thermocouple sensors, thermal resistance sensors, and the like. At this time, the first temperature measuring device can be wound on the pipe wall of the refrigeration pipeline 60, so that the first temperature measuring device is attached to the pipe wall of the refrigeration pipeline 60 in a contact area as large as possible, and the temperature measurement accuracy is improved. The third temperature measuring device 80 can be mounted on the susceptor 10, and the temperature measuring end of the third temperature measuring device 80 is in direct contact with the susceptor 10 (e.g., in direct contact with the wall of the electrode cavity 50) for measuring the temperature. Of course, in other embodiments, the first temperature measuring device and/or the third temperature measuring device 80 may also adopt a non-contact temperature measuring sensor, such as a radiation temperature measuring device, according to actual needs.
The controller is in communication with the first temperature measuring device, the third temperature measuring device 80 and the cold source. The controller controls the cold source to adjust the temperature of the base 10 according to the measured temperature of the pipe wall and the measured temperature of the base, so that the adjusted temperature of the base meets the condensation prevention requirement, the accurate control of the temperature of the base is realized, and the condensation prevention effect is ensured. Preferably, the third temperature measuring device 80 measures the base temperature of the base 10 in real time, so that the base temperature of the base 10 can be monitored. In addition, the first temperature measuring device can also measure the temperature of the pipe wall of the refrigeration pipeline 60 in real time, and the third temperature measuring device 80 is matched to measure the temperature of the base 10 in real time, so that the base temperature of the base 10 can be effectively controlled in real time.
The "anti-condensation requirement" means that the adjusted temperature of the base is less than or equal to the temperature of the tube wall, and the temperature in the cavity of the electrode inner cavity 50 is necessarily less than the temperature of the tube wall; or the adjusted temperature of the base is higher than the temperature of the tube wall and the temperature difference between the two is less than or equal to a third preset threshold value, so that the moisture contained in the gas in the electrode inner cavity 50 is prevented from being condensed at the refrigerating pipeline 60.
Controlling the cooling power enables direct adjustment of the susceptor temperature of the susceptor 10. The realization mode of adjusting the temperature by controlling the cooling source is not limited, and the reasonable design can be carried out according to factors such as the specific structure of the cooling source, the type of the cooling medium and the like. For example, the temperature of the base of the susceptor 10 may be controlled by controlling the temperature and/or flow of a cooling medium (e.g., a cooling fluid, a cooling gas, etc.) for the purpose of indirectly controlling the intra-cavity temperature of the electrode intra-cavity 50.
When judging whether the adjusted temperature of the base meets the anti-condensation requirement, the adjusted temperature of the base needs to be compared with the temperature of the pipe wall. It should be noted that the "wall temperature" at this time may be the wall temperature of the refrigeration pipeline 60 measured by the first temperature measuring device before temperature adjustment is performed, that is, the "wall temperature" on which the temperature adjustment is performed by controlling the cold source; or the current wall temperature of the refrigeration circuit 60 measured by the first temperature measuring device at the current moment. In addition, the "third preset threshold" is determined according to a criterion that when the adjusted temperature of the base is greater than the temperature of the tube wall and the temperature difference between the two is less than or equal to the third preset threshold, the moisture contained in the gas in the electrode cavity 50 is not condensed at the refrigeration pipeline 60. The specific manner of acquiring the third preset threshold is the same as the manner of acquiring the first preset threshold, and is not described herein again.
In particular, as shown in fig. 3, in some embodiments, the refrigeration circuit 60 includes an inlet section 61 and a return section 62, and the inlet section 61, the load structure 20, and the return section 62 are in communication in sequence such that the cooling medium flows from the inlet section 61 to the load structure 20 and from the return section 62. Since the cooling medium needs to exchange heat with the supporting structure 20 after flowing into the supporting structure and take away heat from the supporting structure 20, the wall temperature of the return pipe section 62 will be slightly higher than that of the inlet pipe section 61. Therefore, the wall temperature of the input pipe section 61 can be taken as the wall temperature of the refrigeration pipeline 60, and the first temperature measuring device is matched with the input pipe section 61 and measures the temperature of the input pipe section 61. If the temperature of the electrode cavity 50/the temperature of the base 10 of the base and the temperature of the wall of the inlet pipe section 61 meet the anti-condensation requirement, the temperature of the wall of the return pipe section 62 will necessarily meet the anti-condensation requirement.
The invention also provides semiconductor processing equipment, which comprises a reaction chamber and a lower electrode assembly arranged in the reaction chamber according to the embodiment of the semiconductor processing equipment, wherein the lower electrode assembly is the lower electrode assembly of each embodiment. The assembly between the reaction chamber and the lower electrode assembly, the advantageous effects due to the use of the lower electrode assembly, and the like are described in detail above and will not be described in detail herein.
The invention also provides a lower electrode condensation preventing method which is applied to the lower electrode assembly of each embodiment. An embodiment of a method of preventing condensation on a lower electrode includes:
the base 10 is cooled to indirectly cool the electrode inner cavity 50, so that the temperature in the electrode inner cavity 50 is less than or equal to the temperature of the pipe wall of the refrigeration pipeline 60, or greater than the temperature of the pipe wall of the refrigeration pipeline 60, and the temperature difference between the two is less than or equal to a first preset threshold value, thereby preventing the moisture contained in the gas in the electrode inner cavity 50 from condensing at the refrigeration pipeline 60.
As shown in fig. 7, in some embodiments, the lower electrode condensation preventing method includes the steps of:
s11: cooling the susceptor 10 by a cooling structure (e.g., cooling channel 71) in communication with a cool source;
s12: measuring the wall temperature of the refrigeration line 60;
s13: measuring the intra-cavity temperature of the electrode intra-cavity 50;
s14: according to the measured pipe wall temperature and the measured cavity temperature, the cold source is controlled to adjust the cavity temperature of the electrode cavity 50, so that the adjusted cavity temperature is less than or equal to the pipe wall temperature, or is greater than the pipe wall temperature, and the temperature difference between the pipe wall temperature and the temperature is less than or equal to a second preset threshold, and further, the moisture contained in the gas in the electrode cavity 50 is prevented from being condensed at the position of the refrigeration pipeline 60.
The sequence between step S12 and step S13 is not limited.
In other embodiments, as shown in fig. 8, the lower electrode condensation preventing method includes the steps of:
s21: cooling the susceptor 10 by a cooling structure (e.g., cooling channel 71) in communication with a cool source;
s22: measuring the wall temperature of the refrigeration line 60;
s23: measuring the susceptor temperature of the susceptor 10;
s24: according to the measured tube wall temperature and the measured base temperature, the cold source is controlled to adjust the base temperature of the base 10, so that the adjusted base temperature is less than or equal to the tube wall temperature, or is greater than the tube wall temperature, and the temperature difference between the adjusted base temperature and the tube wall temperature is less than or equal to a third preset threshold, and further, the moisture contained in the gas in the electrode inner cavity 50 is prevented from being condensed at the position of the refrigeration pipeline 60.
The sequence between step S22 and step S23 is not limited.
It should be noted that the principle, the proceeding process, the beneficial effects, the explanation and the analysis of the lower electrode condensation preventing method are described in detail in the structural part above, and are not described in detail herein.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (13)
1. A lower electrode assembly for disposition in a reaction chamber of a semiconductor processing apparatus, the lower electrode assembly comprising:
the base is connected to the inner wall of the reaction chamber;
the bearing structure is connected to the base and forms an electrode inner cavity together with the base;
the refrigeration pipeline is positioned in the electrode inner cavity and matched with the bearing structure to cool the electrode inner cavity;
the cooling structure is matched with the base to cool the base, and the cooling of the base is indirect to cool the electrode inner cavity, so that the temperature in the cavity of the electrode inner cavity is less than or equal to the temperature of the pipe wall of the refrigeration pipeline, or greater than the temperature difference between the temperature of the pipe wall of the refrigeration pipeline and the temperature difference of the pipe wall of the refrigeration pipeline is less than or equal to a first preset threshold value, and then the condensation of the refrigeration pipeline is prevented from occurring due to the moisture contained in the gas in the electrode inner cavity.
2. The lower electrode assembly of claim 1, wherein the cooling structure comprises a cooling channel comprising a sandwiched channel opening inside the base, the cooling structure further comprising an inlet and an outlet provided on an outer wall of the base, the inlet and the outlet both communicating with the sandwiched channel to enable a cooling medium to flow from the inlet into the sandwiched channel and out of the outlet.
3. The lower electrode assembly of claim 2,
the base comprises a base main body part and a fixing part connected to the base main body part, the fixing part protrudes out of the outer wall of the base main body part, the fixing part is used for being connected to the inner wall of the reaction chamber to fix the base,
the electrode inner cavity comprises an inner cavity main body formed on the inner side of the base main body part and a penetrating channel formed on the inner side of the fixing part, the inner cavity main body is communicated with the penetrating channel, the penetrating channel is at least used for penetrating the refrigeration pipeline,
the cooling channel comprises an inlet section, an annular section and an outlet section which are connected in sequence, the inlet section and the outlet section are located on the fixing portion, the annular section is located on the base main body portion, and the annular section extends along the circumferential direction of the inner cavity main body.
4. The lower electrode assembly of claim 3, wherein the base body portion comprises an annular sidewall portion and a bottom wall portion connected below the annular sidewall portion, the load-bearing structure being connected above the annular sidewall portion, wherein the cooling channel is located on the annular sidewall portion and/or the bottom wall portion.
5. The lower electrode assembly according to claim 4,
a dimension of a longitudinal section of the cooling passage in an axial direction of the annular side wall portion is larger than a maximum dimension in a radial direction of the annular side wall portion when the cooling passage is located on the annular side wall portion;
when the cooling passage is located on the bottom wall portion, a dimension of a longitudinal section of the cooling passage in a radial direction of the annular side wall portion is larger than a maximum dimension in an axial direction of the annular side wall portion.
6. The lower electrode assembly of claim 1, wherein the cooling structure is configured to communicate with a heat sink and form a cooling circuit, the lower electrode assembly further comprising:
the first temperature measuring device is used for measuring the temperature of the pipe wall of the refrigeration pipeline;
the second temperature measuring device is used for measuring the intracavity temperature of the electrode intracavity;
the controller, with first temperature measuring device second temperature measuring device and the cold source communication is connected, the controller is according to pipe wall temperature and the intracavity temperature that the measurement obtained, control the cold source is in order to right the intracavity temperature of electrode inner chamber is adjusted to the intracavity temperature after making the regulation is less than or equal to pipe wall temperature, perhaps is greater than pipe wall temperature and difference in temperature between them less than or equal to the second and predetermines the threshold value, and then prevents that the moisture that gas in the electrode inner chamber contains is in refrigeration pipeline department takes place the condensation.
7. The lower electrode assembly of claim 1, wherein the cooling structure is configured to communicate with a heat sink and form a cooling circuit, the lower electrode assembly further comprising:
the first temperature measuring device is used for measuring the temperature of the pipe wall of the refrigeration pipeline;
a third temperature measuring device for measuring the base temperature of the base;
the controller, with first temperature measuring device third temperature measuring device and the cold source communication is connected, the controller is according to pipe wall temperature and the base temperature that the measurement obtained, control the cold source is in order to right the base temperature of base is adjusted to the base temperature after making the regulation is less than or equal to pipe wall temperature, perhaps is greater than pipe wall temperature and the difference in temperature between them is less than or equal to the third and predetermines the threshold value, and then prevents that the moisture that gas in the electrode inner chamber contains is in refrigeration pipeline department takes place the condensation.
8. The lower electrode assembly of claim 1, wherein the refrigeration circuit comprises an input pipe section and a return pipe section, and the input pipe section, the carrying structure and the return pipe section are sequentially communicated so that the cooling medium flows from the input pipe section to the carrying structure and flows from the return pipe section, wherein the pipe wall temperature of the input pipe section is taken as the pipe wall temperature of the refrigeration circuit.
9. The bottom electrode assembly of any of claims 1-8, wherein the pedestal comprises an annular sidewall portion and a bottom wall portion connected below the annular sidewall portion, the carrier structure is connected above the annular sidewall portion, and the cooling structure is mated with the annular sidewall portion.
10. A semiconductor processing apparatus comprising a reaction chamber and a lower electrode assembly disposed in the reaction chamber, wherein the lower electrode assembly is the lower electrode assembly of any one of claims 1 to 9.
11. A lower electrode condensation preventing method applied to the lower electrode assembly according to any one of claims 1 to 9, the lower electrode condensation preventing method comprising:
the base is cooled to be indirectly cooled, so that the temperature in the cavity of the electrode inner cavity is less than or equal to the temperature of the pipe wall of the refrigeration pipeline, or is greater than the temperature of the pipe wall of the refrigeration pipeline, and the temperature difference between the temperature of the pipe wall and the temperature of the pipe wall is less than or equal to a first preset threshold value, and therefore moisture contained in gas in the electrode inner cavity is prevented from being condensed at the refrigeration pipeline.
12. The lower electrode condensation preventing method according to claim 11, comprising the steps of:
cooling the base by a cooling structure communicated with a cold source;
measuring the temperature of the pipe wall of the refrigeration pipeline;
measuring the intra-cavity temperature of the electrode intra-cavity;
and controlling the cold source to adjust the temperature in the cavity of the electrode according to the measured temperature of the tube wall and the temperature in the cavity, so that the adjusted temperature in the cavity is less than or equal to the temperature of the tube wall, or is greater than the temperature of the tube wall, and the temperature difference between the temperature of the tube wall and the temperature of the tube wall is less than or equal to a second preset threshold value, and further, the condensation of moisture contained in the gas in the inner cavity of the electrode at the refrigeration pipeline is prevented.
13. The lower electrode condensation preventing method according to claim 11, comprising the steps of:
cooling the base by a cooling structure communicated with a cold source;
measuring the temperature of the pipe wall of the refrigeration pipeline;
measuring a susceptor temperature of the susceptor;
and controlling the cold source to adjust the temperature of the base according to the measured temperature of the pipe wall and the measured temperature of the base, so that the adjusted temperature of the base is less than or equal to the temperature of the pipe wall, or is greater than the temperature of the pipe wall, and the temperature difference between the temperature of the pipe wall and the temperature of the base is less than or equal to a third preset threshold value, and further, the condensation of moisture contained in the gas in the inner cavity of the electrode at the refrigeration pipeline is prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111388731.4A CN114121584B (en) | 2021-11-22 | 2021-11-22 | Bottom electrode assembly, semiconductor processing equipment and bottom electrode condensation prevention method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111388731.4A CN114121584B (en) | 2021-11-22 | 2021-11-22 | Bottom electrode assembly, semiconductor processing equipment and bottom electrode condensation prevention method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114121584A true CN114121584A (en) | 2022-03-01 |
| CN114121584B CN114121584B (en) | 2024-04-16 |
Family
ID=80439574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111388731.4A Active CN114121584B (en) | 2021-11-22 | 2021-11-22 | Bottom electrode assembly, semiconductor processing equipment and bottom electrode condensation prevention method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114121584B (en) |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050021596A (en) * | 2003-08-19 | 2005-03-07 | 주성엔지니어링(주) | Cooling Vase of Electrostatic Chuck |
| JP2007250838A (en) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | Plasma treating apparatus and electrode used for the same |
| JP2007317772A (en) * | 2006-05-24 | 2007-12-06 | Shinko Electric Ind Co Ltd | Electrostatic chuck device |
| CN101351076A (en) * | 2008-09-16 | 2009-01-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Apparatus for processing plasma |
| JP2015035447A (en) * | 2013-08-07 | 2015-02-19 | 日本特殊陶業株式会社 | Electrostatic chuck |
| US20150340255A1 (en) * | 2014-05-20 | 2015-11-26 | Vijay Parkhe | Electrostatic chuck with independent zone cooling and reduced crosstalk |
| CN107093545A (en) * | 2017-06-19 | 2017-08-25 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN108389771A (en) * | 2017-02-02 | 2018-08-10 | 东京毅力科创株式会社 | The processing unit of machined object |
| WO2018223820A1 (en) * | 2017-06-05 | 2018-12-13 | 北京北方华创微电子装备有限公司 | Carrying device and semiconductor processing apparatus |
| CN110670042A (en) * | 2019-12-09 | 2020-01-10 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for thick film deposition |
| CN110867365A (en) * | 2019-11-04 | 2020-03-06 | 北京北方华创微电子装备有限公司 | Plasma system |
| CN211928452U (en) * | 2020-05-29 | 2020-11-13 | 上海华力微电子有限公司 | Temperature control cavity structure and temperature control system |
| CN112563175A (en) * | 2021-02-18 | 2021-03-26 | 北京中硅泰克精密技术有限公司 | Bearing device and semiconductor manufacturing equipment |
| CN112593199A (en) * | 2020-11-25 | 2021-04-02 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device |
| CN112795893A (en) * | 2020-12-17 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN113053715A (en) * | 2019-12-27 | 2021-06-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113053775A (en) * | 2019-12-27 | 2021-06-29 | 中微半导体设备(上海)股份有限公司 | Wafer temperature controller, system and method and plasma processing device |
| CN113130279A (en) * | 2019-12-30 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113517211A (en) * | 2021-04-16 | 2021-10-19 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and film deposition method |
-
2021
- 2021-11-22 CN CN202111388731.4A patent/CN114121584B/en active Active
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050021596A (en) * | 2003-08-19 | 2005-03-07 | 주성엔지니어링(주) | Cooling Vase of Electrostatic Chuck |
| JP2007250838A (en) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | Plasma treating apparatus and electrode used for the same |
| JP2007317772A (en) * | 2006-05-24 | 2007-12-06 | Shinko Electric Ind Co Ltd | Electrostatic chuck device |
| CN101351076A (en) * | 2008-09-16 | 2009-01-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Apparatus for processing plasma |
| JP2015035447A (en) * | 2013-08-07 | 2015-02-19 | 日本特殊陶業株式会社 | Electrostatic chuck |
| US20150340255A1 (en) * | 2014-05-20 | 2015-11-26 | Vijay Parkhe | Electrostatic chuck with independent zone cooling and reduced crosstalk |
| CN108389771A (en) * | 2017-02-02 | 2018-08-10 | 东京毅力科创株式会社 | The processing unit of machined object |
| WO2018223820A1 (en) * | 2017-06-05 | 2018-12-13 | 北京北方华创微电子装备有限公司 | Carrying device and semiconductor processing apparatus |
| CN107093545A (en) * | 2017-06-19 | 2017-08-25 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN110867365A (en) * | 2019-11-04 | 2020-03-06 | 北京北方华创微电子装备有限公司 | Plasma system |
| CN110670042A (en) * | 2019-12-09 | 2020-01-10 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for thick film deposition |
| CN113053715A (en) * | 2019-12-27 | 2021-06-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113053775A (en) * | 2019-12-27 | 2021-06-29 | 中微半导体设备(上海)股份有限公司 | Wafer temperature controller, system and method and plasma processing device |
| TW202125576A (en) * | 2019-12-27 | 2021-07-01 | 大陸商中微半導體設備（上海）股份有限公司 | Lower electrode element, plasma processing device and working method thereof preventing is not easy to cause damage to the parts when in contacting with the cooling gas due to the low temperature |
| CN113130279A (en) * | 2019-12-30 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN211928452U (en) * | 2020-05-29 | 2020-11-13 | 上海华力微电子有限公司 | Temperature control cavity structure and temperature control system |
| CN112593199A (en) * | 2020-11-25 | 2021-04-02 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device |
| CN112795893A (en) * | 2020-12-17 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN112563175A (en) * | 2021-02-18 | 2021-03-26 | 北京中硅泰克精密技术有限公司 | Bearing device and semiconductor manufacturing equipment |
| CN113517211A (en) * | 2021-04-16 | 2021-10-19 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and film deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114121584B (en) | 2024-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102299392B1 (en) | Gas cooled substrate support for stabilized high temperature deposition | |
| US20110168673A1 (en) | Plasma processing apparatus, plasma processing method, and mechanism for regulating temperature of dielectric window | |
| US11373893B2 (en) | Cryogenic electrostatic chuck | |
| WO2024000284A1 (en) | Temperature compensation system, semiconductor device, and temperature compensation method | |
| CN104377155A (en) | Electrostatic chuck and plasma processing equipment | |
| KR101012082B1 (en) | Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator | |
| KR20190043645A (en) | Heater pedestal assembly for a wide range of temperature control | |
| US20210296101A1 (en) | Substrate support assembly with arc resistant coolant conduit | |
| TWI737059B (en) | Cryogenic electrostatic chuck | |
| JP2005183946A (en) | End point detecting device of substrate working process | |
| CN114121584A (en) | Lower electrode assembly, semiconductor processing equipment and lower electrode condensation preventing method | |
| US6508062B2 (en) | Thermal exchanger for a wafer chuck | |
| CN110352482A (en) | Substrate-placing platform and its Electric liquid processing device and plasma-based processing method | |
| JP4671142B2 (en) | Semiconductor wafer processing apparatus, temperature measurement probe, and temperature measurement method thereof | |
| US11860083B2 (en) | Apparatus and method of testing an object within a dry gas environment | |
| CN209910988U (en) | ECR ion source metal furnace testing device | |
| JP3034714B2 (en) | Joint device | |
| CN112530779B (en) | Temperature control system | |
| CN219137004U (en) | Bearing device and MOCVD equipment | |
| CN214471421U (en) | Dry body furnace for calibrating transformer thermometer and matched assembly thereof | |
| SU1641146A1 (en) | Thermal table for realization of low-temperature thermal table for realization of low-temperature probe measurements | |
| CN117419572A (en) | Wafer annealing device | |
| US8955339B2 (en) | Cryogenic pump with a device for preventing the memory effect | |
| JPH0430427A (en) | Electrode body of wafer processor | |
| KR980009706U (en) | Semiconductor device low temperature inspection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |