CN114121337B - Electronic paste and application thereof in solar cell - Google Patents
Electronic paste and application thereof in solar cell Download PDFInfo
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- CN114121337B CN114121337B CN202111577951.1A CN202111577951A CN114121337B CN 114121337 B CN114121337 B CN 114121337B CN 202111577951 A CN202111577951 A CN 202111577951A CN 114121337 B CN114121337 B CN 114121337B
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- 239000011521 glass Substances 0.000 claims abstract description 113
- 239000000843 powder Substances 0.000 claims abstract description 53
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052709 silver Inorganic materials 0.000 claims abstract description 39
- 239000004332 silver Substances 0.000 claims abstract description 39
- 239000003112 inhibitor Substances 0.000 claims abstract description 34
- 239000000203 mixture Substances 0.000 claims abstract description 24
- OBITVTZBIATBCL-UHFFFAOYSA-L copper;decanoate Chemical compound [Cu+2].CCCCCCCCCC([O-])=O.CCCCCCCCCC([O-])=O OBITVTZBIATBCL-UHFFFAOYSA-L 0.000 claims abstract description 20
- 239000010948 rhodium Substances 0.000 claims abstract description 16
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims description 28
- 239000003960 organic solvent Substances 0.000 claims description 28
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 22
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 22
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 22
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 22
- 238000002156 mixing Methods 0.000 claims description 21
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 20
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 20
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 20
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 18
- JZLWSRCQCPAUDP-UHFFFAOYSA-N 1,3,5-triazine-2,4,6-triamine;urea Chemical compound NC(N)=O.NC1=NC(N)=NC(N)=N1 JZLWSRCQCPAUDP-UHFFFAOYSA-N 0.000 claims description 14
- 229920000877 Melamine resin Polymers 0.000 claims description 14
- 239000004840 adhesive resin Substances 0.000 claims description 13
- 229920006223 adhesive resin Polymers 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000010791 quenching Methods 0.000 claims description 9
- 230000000171 quenching effect Effects 0.000 claims description 9
- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 claims description 8
- 238000005303 weighing Methods 0.000 claims description 8
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 claims description 5
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 4
- 229940116411 terpineol Drugs 0.000 claims description 4
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 claims description 3
- HBNHCGDYYBMKJN-UHFFFAOYSA-N 2-(4-methylcyclohexyl)propan-2-yl acetate Chemical compound CC1CCC(C(C)(C)OC(C)=O)CC1 HBNHCGDYYBMKJN-UHFFFAOYSA-N 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000010298 pulverizing process Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 5
- 239000002002 slurry Substances 0.000 description 25
- 239000012043 crude product Substances 0.000 description 16
- 239000004640 Melamine resin Substances 0.000 description 9
- 238000000227 grinding Methods 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- HDKCVDHYIIKWFM-UHFFFAOYSA-K octanoate;rhodium(3+) Chemical compound [Rh+3].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O HDKCVDHYIIKWFM-UHFFFAOYSA-K 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 polysiloxanes Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- 239000003981 vehicle Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000001506 calcium phosphate Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012045 crude solution Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 229910000391 tricalcium phosphate Inorganic materials 0.000 description 1
- 229940078499 tricalcium phosphate Drugs 0.000 description 1
- 235000019731 tricalcium phosphate Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
Abstract
The invention belongs to the technical field of solar cell materials, and particularly relates to electronic paste which comprises the following components in parts by mass: 80-96 parts of silver-coated copper powder, 11-18 parts of glass powder, 15-28 parts of organic carrier and 1-3 parts of inhibitor; the inhibitor is a mixture of rhodium octoate and copper caprate. When the electronic paste is used as the solar cell conductive paste, excellent ohmic contact performance can be generated, high conductivity and excellent photoelectric conversion efficiency are shown, and the electronic paste has wide market prospect.
Description
Technical Field
The invention belongs to the technical field of solar cell materials, and particularly relates to electronic paste and application thereof in solar cells.
Background
The electronic paste is a base material for manufacturing thick film elements, and is a paste which is prepared by uniformly mixing solid powder and an organic solvent through three-roller rolling. The fluid material is applied to electronic components in a printing mode and the like to form a module with specific electrical functions, and is a basic material of various components such as a thick film hybrid integrated circuit, a chip component, a photovoltaic device, a flexible battery, an electro-optical device, a display, a logic and memory component, a Field Effect Transistor (FET) and a Thin Film Transistor (TFT), a sensor array, a Radio Frequency Identification (RFID) tag and the like.
According to different purposes, the electronic paste is divided into dielectric paste, resistor paste and conductor paste; the substrate type is classified into ceramic substrate, polymer substrate, glass substrate, metal insulating substrate electronic slurry, etc.; according to different sintering temperatures, the electronic paste can be dried at high temperature, medium temperature and low temperature; according to different purposes, the method can be divided into general electronic paste (for manufacturing general thick film circuits) and special electronic paste (stainless steel substrate electronic paste and thermistor paste); noble metal electronic paste (silver palladium, ruthenium, gold paste, etc.) and base metal electronic paste (molybdenum manganese paste) are classified according to the price of the conductive phase.
Among them, the electronic paste used for solar cells often has technical defects of poor reliability, low conductivity, low conversion efficiency of solar cells, and the like, so development of a special electronic paste suitable for solar cells and capable of industrialization is needed.
Disclosure of Invention
The technical scheme provided by the invention aims to provide a novel electronic paste, which can generate excellent ohmic contact performance, shows high conductivity and excellent photoelectric conversion efficiency when used as solar cell conductive paste, thereby having wide market prospect.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the first aspect of the invention provides electronic paste, which comprises the following components in parts by mass: 80-96 parts of silver-coated copper powder, 11-18 parts of glass powder, 15-28 parts of organic carrier and 1-3 parts of inhibitor;
wherein the median particle diameter of the silver-coated copper powder is 80-110nm;
wherein, the glass powder consists of the following components: siO (SiO) 2 、Bi 2 O 3 、TeO 2 、BaCO 3 、MgO、TiO 2 And Al 2 O 3 ;
Wherein the organic carrier consists of adhesive resin and organic solvent;
wherein the inhibitor is a mixture of rhodium octoate and copper caprate.
The silver-coated copper powder is a commercially available existing product or a product which can be prepared according to a technical scheme described in the prior art, for example, the silver-coated copper powder can be prepared according to a method described in Chinese patent CN 103128308B. In addition, the silver-coated copper powder may be in a flake form or a sphere form.
The use of the silver-coated copper powder effectively avoids the direct use of expensive silver powder, so that the production cost of the electronic paste is obviously reduced; in addition, the relative molecular weight of silver is higher than that of copper, and after silver powder is coated with copper powder, the specific surface area of spherical silver coated copper powder is larger than that of spherical silver powder under the same quality, so that the dispersion is better, the dispersion is more uniform when the silver powder is used for the conductive paste of the solar cell, the agglomeration phenomenon is obviously reduced, and the improvement of the net passing performance of the conductive paste is facilitated.
Wherein the glass frit composed of specific components is a lead-free glass system, and the use of the glass frit unexpectedly can reduce the parallel resistance and the series resistance of the electronic paste containing the same, thereby obtaining better conductivity.
Wherein, the organic carrier is used for mechanically and uniformly mixing the silver-coated copper powder and the glass powder, so that the composition is endowed with proper viscosity and rheological property.
Wherein rhodium octoate has CAS number of 73482-96-9 and molecular formula of C 32 H 60 O 8 Rh 2 The method comprises the steps of carrying out a first treatment on the surface of the Copper decanoate has a CAS number of 50315-14-5 and a molecular formula of C 20 H 38 CuO 4 . The inventor finds that the addition of rhodium octoate and copper caprate can prevent the excessive sintering of the silver-coated copper powder, inhibit the diffusion of liquefied glass, and is favorable for forming excellent ohmic contact, thereby remarkably improving the photoelectric conversion efficiency.
Preferably, the electronic paste according to the first aspect may further comprise other additives. The other additives are one or more of leveling agents, thickening agents and thixotropic agents. Specifically, the leveling agent is preferably: acrylic leveling agents, such as pure acrylic leveling agents, modified acrylic leveling agents; organosilicon leveling agents, such as polymethylalkylsiloxanes, organomodified polysiloxanes; fluorocarbon leveling agents. The thickener is preferably one or more of sodium fatty acid and tricalcium phosphate. The thixotropic agent is preferably hydrogenated castor oil or/and gum, which increases the thixotropic properties of the conductive paste, resulting in a conductive paste having a higher consistency at rest and which becomes a low consistency fluid under the influence of an external force.
Preferably, in the electronic paste, the glass frit is composed of: 42wt% SiO 2 、25wt%Bi 2 O 3 、13wt%TeO 2 、9wt%BaCO 3 、8.5wt%MgO、1.4wt%TiO 2 And 1.1wt% Al 2 O 3 。
The above component proportions by mass percent are optimal proportions obtained by the inventors through orthogonal experiments and the like. In addition, the glass frit may also consist of the following components: 45wt% SiO 2 、22wt%Bi 2 O 3 、14wt%TeO 2 、7wt%BaCO 3 、6.8wt%MgO、3wt%TiO 2 And 2.2wt% Al 2 O 3 . As another example, the glass frit may alsoThe composition comprises the following components: 43wt% SiO 2 、26wt%Bi 2 O 3 、10wt%TeO 2 、9wt%BaCO 3 、7.9wt%MgO、2.4wt%TiO 2 And 1.7wt% Al 2 O 3 。
And, preferably, the glass frit is prepared according to the following steps:
s1: respectively weighing SiO according to mass percent 2 、Bi 2 O 3 、TeO 2 、BaCO 3 、MgO、TiO 2 And Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to prepare the glass frit.
Further preferably, in S2, the heating temperature is 760 to 850 ℃, and the heating duration is 30 to 50 minutes.
Further preferably, in S4, the average particle diameter of the glass frit powder produced by the ball mill pulverization is 300 to 400nm.
Preferably, in the electronic paste, the adhesive resin in the organic vehicle is selected from any one or a combination of more of the following: ethylcellulose, epoxy resins, acrylic resins, phenolic resins, and urea melamine resins. Further preferably, on this basis, the adhesive resin is selected from any one or a combination of the following: acrylic resins, phenolic resins and urea melamine resins. Most preferably, the adhesive resin is a urea melamine resin.
Preferably, in the electronic paste, the organic solvent in the organic carrier is selected from any one or a combination of more of the following: terpineol, dihydroterpineol, ethylene glycol phenyl ether, propylene glycol phenyl ether, butyl carbitol acetate, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dihydroterpineol acetate, diethylene glycol monoethyl ether acetate, and diethylene glycol monobutyl ether acetate.
Further preferably, the organic solvent is a multi-component solvent, for example, the organic solvent is composed of terpineol, dihydroterpineol, and butyl carbitol acetate; for example, the organic solvent consists of ethylene glycol phenyl ether and propylene glycol phenyl ether; for example, the organic solvent consists of ethylene glycol phenyl ether, propylene glycol phenyl ether and terpinyl diacetate; for another example, the organic solvent is composed of butyl carbitol, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether.
Still more preferably, the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether. On the basis, the volume ratio of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether is preferably 4:2:1, or 3:2:2, or 4:2.5:2.
in addition, for exemplary purposes, the organic carrier may be prepared according to the following steps: butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether are firstly mixed according to the ratio of 3:2:2, uniformly mixing the components in a volume ratio to obtain a mixed solvent; then, according to the mixed solvent: adhesive resin=10:1 (mass ratio) urea melamine resin as adhesive resin was added to obtain an organic vehicle crude solution; and finally, heating in a water bath at 70 ℃, stirring for 1 hour, cooling to room temperature, and covering a preservative film to prevent the solvent from volatilizing, thus obtaining the organic carrier.
Preferably, in the electronic paste, the inhibitor comprises: 36wt% to 45wt% rhodium octoate and 64wt% to 55wt% copper decanoate.
Further preferably, the inhibitor comprises 39wt% rhodium octoate with 61wt% copper decanoate.
Further preferably, the inhibitor comprises 40wt% rhodium octanoate with 60wt% copper decanoate.
Still more preferably, the inhibitor comprises 42wt% rhodium octanoate with 58wt% copper decanoate.
Most preferably, the inhibitor comprises 43wt% rhodium octoate with 57wt% copper decanoate.
Furthermore, a second aspect of the present invention provides a method for preparing the electronic paste according to the first aspect, comprising the steps of:
p1: at room temperature, adding silver-coated copper powder and glass powder into a container, and uniformly mixing to obtain a premix;
p2: sequentially adding an organic carrier and an inhibitor into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry.
In the above preparation method, the operations of mixing, grinding, vacuum centrifugal deaeration, etc. are all conventional operations known to those skilled in the art, and thus are not described in detail herein.
The third aspect of the invention provides application of the electronic paste in solar cells. Specifically, an electrode containing the electronic paste according to the first aspect may be used in the solar cell.
In summary, compared with the prior art, the technical scheme provided by the invention has at least the following beneficial effects:
the use of glass powder composed of specific components can reduce the parallel resistance and the series resistance, thereby obtaining better conductivity; particularly, the addition of rhodium octoate and copper caprate can prevent excessive sintering of silver-coated copper powder, inhibit diffusion of liquefied glass, and is favorable for forming excellent ohmic contact, so that the photoelectric conversion efficiency is remarkably improved. Therefore, the electronic paste provided by the invention has high conductivity and excellent photoelectric conversion efficiency, and has wide market prospect.
Detailed Description
The present invention will be specifically described with reference to the following examples. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
According to the technical scheme provided by the first aspect of the invention, the electronic paste comprises, in parts by mass,comprises the following components: 81 parts of silver-coated copper powder, 12 parts of glass powder, 17 parts of organic carrier and 1 part of inhibitor; wherein the median particle diameter of the silver-coated copper powder is 90 nm; the glass powder consists of the following components: siO (SiO) 2 、Bi 2 O 3 、TeO 2 、BaCO 3 、MgO、TiO 2 And Al 2 O 3 The method comprises the steps of carrying out a first treatment on the surface of the The organic carrier consists of adhesive resin and organic solvent; the inhibitor is a mixture of rhodium octoate and copper caprate.
In a preferred embodiment, an electronic paste comprises the following components in parts by mass: 90 parts of silver-coated copper powder, 15 parts of glass powder, 22 parts of organic carrier and 1 part of inhibitor; wherein the median particle diameter of the silver-coated copper powder is 90 nm; the glass powder consists of the following components: siO (SiO) 2 、Bi 2 O 3 、TeO 2 、BaCO 3 、MgO、TiO 2 And Al 2 O 3 The method comprises the steps of carrying out a first treatment on the surface of the The organic carrier consists of adhesive resin and organic solvent; the inhibitor is a mixture of rhodium octoate and copper caprate.
In a preferred embodiment, the glass frit consists of the following components: 42wt% SiO 2 、25wt%Bi 2 O 3 、13wt%TeO 2 、9wt%BaCO 3 、8.5wt%MgO、1.4wt%TiO 2 And 1.1wt% Al 2 O 3 。
In another preferred embodiment, the glass frit may also consist of the following components: 45wt% SiO 2 、22wt%Bi 2 O 3 、14wt%TeO 2 、7wt%BaCO 3 、6.8wt%MgO、3wt%TiO 2 And 2.2wt% Al 2 O 3 。
In a further preferred embodiment, the glass frit may also consist of the following components: 43wt% SiO 2 、26wt%Bi 2 O 3 、10wt%TeO 2 、9wt%BaCO 3 、7.9wt%MgO、2.4wt%TiO 2 And 1.7wt% Al 2 O 3 。
In a preferred embodiment, the adhesive resin is selected from any one or a combination of the following: ethylcellulose, epoxy resins, acrylic resins, phenolic resins, and urea melamine resins.
In a preferred embodiment, the adhesive resin is selected from any one or a combination of the following: acrylic resins, phenolic resins and urea melamine resins.
In a further preferred embodiment, the adhesive resin is a urea melamine resin.
In a preferred embodiment, the organic solvent is selected from any one or a combination of the following: terpineol, dihydroterpineol, ethylene glycol phenyl ether, propylene glycol phenyl ether, butyl carbitol acetate, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dihydroterpineol acetate, diethylene glycol monoethyl ether acetate, and diethylene glycol monobutyl ether acetate.
In a further preferred embodiment, the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether. In a still further preferred embodiment, the volume ratio of butyl carbitol, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether is preferably 4:2:1.
in a preferred embodiment, the inhibitor comprises: 36wt% to 45wt% rhodium octoate and 64wt% to 55wt% copper decanoate.
In a further preferred embodiment, the glass frit is prepared according to the following steps:
s1: respectively weighing SiO according to mass percent 2 、Bi 2 O 3 、TeO 2 、BaCO 3 、MgO、TiO 2 And Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid; the heating temperature is 760-850 ℃, and the heating duration is 30-50 minutes;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to prepare the glass frit having an average particle size of 300 to 400nm.
According to a second aspect of the present invention, the method for preparing an electronic paste according to the first aspect includes the steps of:
p1: at room temperature, adding silver-coated copper powder and glass powder into a container, and uniformly mixing to obtain a premix;
p2: sequentially adding an organic carrier and an inhibitor into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry.
According to the technical scheme provided by the third aspect of the invention, the electronic paste is applied to solar cells. Specifically, an electrode containing the electronic paste according to the first aspect may be used in the solar cell.
The present invention will be described in detail and in detail by way of the following examples, which are not intended to limit the scope of the invention, for better understanding of the invention.
Example 1
The glass powder alpha is prepared according to the following steps:
s1: weighing 42wt% of SiO respectively according to mass percentage 2 、25wt%Bi 2 O 3 、13wt%TeO 2 、9wt%BaCO 3 、8.5wt%MgO、1.4wt%TiO 2 And 1.1wt% Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid; the temperature of the heating is 790 ℃, and the duration of the heating is 40 minutes;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to produce the glass frit α having an average particle diameter of 300 to 400nm.
Example 2
The glass powder beta is prepared according to the following steps:
s1: 45wt% of SiO is respectively weighed according to the mass percentage 2 、22wt%Bi 2 O 3 、14wt%TeO 2 、7wt%BaCO 3 、6.8wt%MgO、3wt%TiO 2 And 2.2wt% Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid; the temperature of the heating is 790 ℃, and the duration of the heating is 40 minutes;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to prepare the glass frit β having an average particle diameter of 300 to 400nm.
Example 3
The glass powder gamma is prepared according to the following steps:
s1: respectively weighing 43wt% of SiO according to mass percent 2 、26wt%Bi 2 O 3 、10wt%TeO 2 、9wt%BaCO 3 、7.9wt%MgO、2.4wt%TiO 2 And 1.7wt% Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid; the temperature of the heating is 790 ℃, and the duration of the heating is 40 minutes;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to prepare the glass frit γ having an average particle diameter of 300 to 400nm.
Example 4
The glass powder delta is prepared according to the following steps:
s1: weighing 60wt% of SiO according to mass percentage 2 、15.7wt%Bi 2 O 3 、9wt%TeO 2 、5wt%BaCO 3 、3.1wt%MgO、4.3wt%TiO 2 And 2.9wt% Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid; the temperature of the heating is 790 ℃, and the duration of the heating is 40 minutes;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to produce the glass frit delta having an average particle diameter of 300 to 400nm.
Example 5
The electronic paste I is prepared according to the following steps:
p1: at room temperature, adding silver-coated copper powder and glass powder into a container, and uniformly mixing to obtain a premix;
p2: sequentially adding an organic carrier and an inhibitor into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry I.
Wherein, the electronic paste I comprises the following components in parts by mass: 90 parts of silver-coated copper powder, 15 parts of glass powder, 22 parts of organic carrier and 1 part of inhibitor; wherein the median particle diameter of the silver-coated copper powder is 90 nm; the glass powder is glass powder alpha.
The organic carrier consists of urea melamine resin and an organic solvent, wherein the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; and, butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether have a volume ratio of 4:2:1.
the inhibitor comprises 43wt% rhodium octanoate and 57wt% copper decanoate.
Example 6
In this embodiment, the glass frit is glass frit β; except for the above, the preparation steps and the kinds, proportions, etc. of the components were the same as in example 5, and finally electronic paste II was prepared.
Example 7
In this embodiment, the glass frit is glass frit γ; except for the above, the preparation steps and the kinds, proportions, etc. of the components were the same as in example 5, and electronic paste III was finally produced.
Example 8
In this embodiment, the glass frit is glass frit δ; except for this, the preparation steps and the kinds, proportions, etc. of the components were the same as in example 5, and finally, electronic paste IV was prepared.
Comparative example 1
The electronic paste V was prepared according to the following steps:
p1: at room temperature, adding silver-coated copper powder and glass powder into a container, and uniformly mixing to obtain a premix;
p2: adding an organic carrier into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry V.
Wherein, the electronic paste V comprises the following components in parts by mass: 90 parts of silver-coated copper powder, 15 parts of glass powder and 22 parts of organic carrier; wherein the median particle diameter of the silver-coated copper powder is 90 nm; the glass powder is glass powder alpha.
The organic carrier consists of urea melamine resin and an organic solvent, wherein the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; and, butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether have a volume ratio of 4:2:1.
comparative example 2
The electronic paste VI is prepared according to the following steps:
p1: at room temperature, adding silver-coated copper powder and glass powder into a container, and uniformly mixing to obtain a premix;
p2: sequentially adding an organic carrier and an inhibitor into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry VI.
Wherein, the electronic paste VI comprises the following components in parts by mass: 90 parts of silver-coated copper powder, 15 parts of glass powder, 22 parts of organic carrier and 1 part of inhibitor; wherein the median particle diameter of the silver-coated copper powder is 90 nm; the glass powder is glass powder alpha.
The organic carrier consists of urea melamine resin and an organic solvent, wherein the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; and, butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether have a volume ratio of 4:2:1.
the inhibitor is 100wt% of copper decanoate.
Comparative example 3
The electronic paste VII was prepared according to the following steps:
p1: at room temperature, adding silver-coated copper powder and glass powder into a container, and uniformly mixing to obtain a premix;
p2: sequentially adding an organic carrier and an inhibitor into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry VII.
Wherein, the electronic paste VII comprises the following components in parts by mass: 90 parts of silver-coated copper powder, 15 parts of glass powder, 22 parts of organic carrier and 1 part of inhibitor; wherein the median particle diameter of the silver-coated copper powder is 90 nm; the glass powder is glass powder alpha.
The organic carrier consists of urea melamine resin and an organic solvent, wherein the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; and, butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether have a volume ratio of 4:2:1.
the inhibitor is 100wt% rhodium octoate.
Comparative example 4
The electronic paste VIII is prepared according to the following steps:
p1: at room temperature, adding silver-coated copper powder and glass powder epsilon into a container, and uniformly mixing to obtain a premix;
p2: sequentially adding an organic carrier and an inhibitor into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry VIII.
The electronic paste VIII comprises the following components in parts by mass: 90 parts of silver-coated copper powder, 15 parts of glass powder epsilon, 22 parts of organic carrier and 1 part of inhibitor; wherein the median particle diameter of the silver-coated copper powder is 90 nm; wherein, the preparation steps of the glass powder epsilon are as follows:
s1: weighing 55wt% of SiO respectively according to mass percentage 2 、25wt%Bi 2 O 3 、9wt%BaCO 3 、8.5wt%MgO、1.4wt%TiO 2 And 1.1wt% Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid; the temperature of the heating is 790 ℃, and the duration of the heating is 40 minutes;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to produce the glass frit epsilon having an average particle diameter of 300 to 400nm.
The organic carrier consists of urea melamine resin and an organic solvent, wherein the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; and, butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether have a volume ratio of 4:2:1.
the inhibitor comprises 43wt% rhodium octanoate and 57wt% copper decanoate.
Comparative example 5
The electronic paste IX was prepared according to the following steps:
p1: at room temperature, adding silver-coated copper powder and glass powder zeta into a container, and uniformly mixing to obtain a premix;
p2: sequentially adding an organic carrier and an inhibitor into the premix at room temperature, and stirring until the mixture is uniform;
p3: grinding to obtain a slurry crude product which is uniformly ground;
p4: and (3) carrying out vacuum centrifugal defoaming on the slurry crude product which is uniformly ground, and finally obtaining the electronic slurry IX.
Wherein, the electronic paste IX comprises the following components in parts by mass: 90 parts of silver-coated copper powder, 15 parts of glass powder zeta, 22 parts of organic carrier and 1 part of inhibitor; wherein the median particle diameter of the silver-coated copper powder is 90 nm; wherein, the preparation steps of glass powder zeta are:
s1: respectively weighing 64wt% of SiO according to mass percent 2 、25wt%Bi 2 O 3 、8.5wt%MgO、1.4wt%TiO 2 And 1.1wt% Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid; the temperature of the heating is 790 ℃, and the duration of the heating is 40 minutes;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass powder thus obtained was pulverized by a ball mill to prepare the glass powder ζ having an average particle diameter of 300 to 400nm.
The organic carrier consists of urea melamine resin and an organic solvent, wherein the organic solvent consists of butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; and, butyl carbitol, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether have a volume ratio of 4:2:1.
the inhibitor comprises 43wt% rhodium octanoate and 57wt% copper decanoate.
In addition, the inventor also detects key indexes of the electronic pastes I-IX respectively. Specifically, the electronic pastes I to IX were subjected to viscosity test by measuring with a viscometer (Brookfiled SC4-1410rpm,25 ℃). Brookfiled SC4-1410rpm was printed on a 125mm x 125mm Si substrate at 25℃using a screen printer, and then sintered for 2-4 seconds by a sintering furnace having a peak temperature of 700-730℃and, after sintering, electrical properties were tested using an I-V tester (Shanghai Heisha solar technology Co., ltd., HSC 1-1S) and welded on a main grid line using 40Sn/60Pb at 330-360℃with the test results shown in Table 1 below.
TABLE 1
Project test object | viscosity/Pa.s | Short-circuit current/mA | Parallel resistor/omega | Series resistance/mΩ | Photoelectric conversion efficiency/% |
Electronic paste I | 179 | 9.07 | 205 | 1.49 | 21.3 |
Electronic paste II | 183 | 9.02 | 212 | 1.52 | 21.0 |
Electronic paste III | 183 | 8.91 | 218 | 1.57 | 20.7 |
Electronic paste IV | 181 | 8.93 | 217 | 1.61 | 20.9 |
Electronic paste V | 182 | 8.92 | 213 | 1.53 | 13.4 |
Electronic paste VI | 180 | 8.90 | 214 | 1.50 | 15.1 |
Electronic paste VII | 186 | 8.91 | 213 | 1.54 | 14.5 |
Electronic paste VIII | 197 | 7.24 | 379 | 2.87 | 19.2 |
Electronic paste IX | 189 | 6.38 | 403 | 3.26 | 19.4 |
As can be seen from the above Table 1, the electronic pastes V-VII corresponding to comparative examples 1-3 exhibited lower photoelectric conversion efficiencies; in contrast, the electronic paste I-IV added with rhodium octoate and copper caprate can effectively prevent the excessive sintering of silver-coated copper powder, inhibit the diffusion of liquefied glass, and is favorable for forming excellent ohmic contact, thereby showing higher photoelectric conversion efficiency.
Also, as can be seen from the above table 1, the parallel resistance and the series resistance detected from the electronic pastes viii and ix corresponding to comparative examples 4 and 5 are both high; in contrast, low parallel resistance and series resistance are detected from the electronic pastes I to iv containing the glass frit α, the glass frit β, the glass frit γ, and the glass frit δ, respectively, and the electronic pastes I to iv exhibit high short-circuit current, and thus have high conductivity.
The above description of the specific embodiments of the present invention has been given by way of example only, and the present invention is not limited to the above described specific embodiments. Any equivalent modifications and substitutions for the present invention will occur to those skilled in the art, and are also within the scope of the present invention. Accordingly, equivalent changes and modifications are intended to be included within the scope of the present invention without departing from the spirit and scope thereof.
Claims (10)
1. The electronic paste is characterized by comprising the following components in parts by mass: 80-96 parts of silver-coated copper powder, 11-18 parts of glass powder, 15-28 parts of organic carrier and 1-3 parts of inhibitor;
wherein the median particle diameter of the silver-coated copper powder is 80-110nm;
wherein, the glass powder consists of the following components: siO (SiO) 2 、Bi 2 O 3 、TeO 2 、BaCO 3 、MgO、TiO 2 And Al 2 O 3 ;
Wherein the organic carrier consists of adhesive resin and organic solvent;
wherein the inhibitor is a mixture of rhodium octoate and copper caprate.
2. The electronic paste of claim 1, wherein the glass frit is composed of: 42wt% SiO 2 、25wt%Bi 2 O 3 、13wt%TeO 2 、9wt%BaCO 3 、8.5wt%MgO、1.4wt%TiO 2 And 1.1wt% Al 2 O 3 。
3. The electronic paste of claim 1, wherein the adhesive resin is selected from any one or a combination of the following: ethylcellulose, epoxy resins, acrylic resins, phenolic resins, and urea melamine resins.
4. The electronic paste of claim 1, wherein the organic solvent is selected from any one or a combination of the following: terpineol, dihydroterpineol, ethylene glycol phenyl ether, propylene glycol phenyl ether, butyl carbitol acetate, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dihydroterpineol acetate, diethylene glycol monoethyl ether acetate, and diethylene glycol monobutyl ether acetate.
5. The electronic paste according to claim 4, wherein the organic solvent is composed of butyl carbitol, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether.
6. The electronic paste of claim 1, wherein the inhibitor comprises: 36wt% to 45wt% rhodium octoate and 64wt% to 55wt% copper decanoate.
7. The electronic paste according to claim 2, wherein the glass frit is prepared according to the steps of:
s1: respectively weighing SiO according to mass percent 2 、Bi 2 O 3 、TeO 2 、BaCO 3 、MgO、TiO 2 And Al 2 O 3 Placing the mixture in a crucible, and uniformly mixing;
s2: heating in a muffle furnace to melt to prepare glass liquid;
s3: pouring the glass liquid into deionized water for quenching to prepare coarse glass powder;
s4: the crude glass frit thus obtained was pulverized by a ball mill to prepare the glass frit.
8. The electronic paste according to claim 7, wherein in S2, the heating temperature is 760 to 850 ℃, and the heating duration is 30 to 50 minutes.
9. The electronic paste according to claim 7, wherein in S4, the average particle diameter of the glass frit powder produced by the ball mill pulverization is 300 to 400nm.
10. Use of the electronic paste according to any one of claims 1 to 9 in solar cells.
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