CN114119590A - Method for measuring dislocation density and dislocation density counting device - Google Patents

Method for measuring dislocation density and dislocation density counting device Download PDF

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CN114119590A
CN114119590A CN202111462912.7A CN202111462912A CN114119590A CN 114119590 A CN114119590 A CN 114119590A CN 202111462912 A CN202111462912 A CN 202111462912A CN 114119590 A CN114119590 A CN 114119590A
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image
etch
pits
acquired image
dislocation density
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王志珍
王元立
高伟
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Beijing Tongmei Xtal Technology Co Ltd
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    • G—PHYSICS
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    • G06T7/0004—Industrial image inspection
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    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10004—Still image; Photographic image
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
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    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
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    • G06T2207/30242—Counting objects in image

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Abstract

The invention relates to a method for measuring dislocation density, which comprises the following steps: acquiring an image of a measurement object; detecting the corrosion pits in the acquired image according to preset corrosion pit screening conditions, and statistically calculating the average area value S of the single corrosion pits in the acquired image0And the average boundary rectangle major-minor ratio R0(ii) a Carrying out contour detection on a black shape in the acquired image to obtain a contour area S of the black shape and a long-short side ratio R of a boundary rectangle; an outline area S based on the black shape, and a ratio R of a long side to a short side of a boundary rectangle to the average area value S0And the average boundary rectangle major-minor ratio R0Determining the black colorThe number of etch pits for the shape; and calculating the dislocation density of the measurement object based on the total number of etch pits in the acquired image and the total area of the acquired image. The invention also relates to a dislocation density counting device and a non-transitory computer readable medium.

Description

Method for measuring dislocation density and dislocation density counting device
Technical Field
The present invention relates to the technical field of dislocation measurement, and in particular, to a method of measuring dislocation density, a dislocation density counting apparatus, and a non-transitory computer readable medium.
Background
"dislocations" (disclinations), which may also be referred to as dislocations, refer in material science to an internal microscopic defect of a crystalline material, i.e. a locally irregular arrangement of atoms (crystallographic defect). From a geometrical point of view, dislocations can be seen as the boundary between slipped and non-slipped parts in the crystal, the presence of which has a great influence on the physical properties of the material.
Particularly, in the semiconductor manufacturing process, the generation of dislocations is inevitable, but the dislocations may affect the migration of carriers, thereby directly affecting the quality of semiconductors, epitaxial layers and devices. Therefore, it is of great importance to accurately obtain the dislocation density for product quality control.
In the conventional dislocation Density measuring method, after a wafer is etched, an Etch Pit in an image region is manually counted by using a microscope, and finally, the Etch Pit Density (EPD) is calculated. This method has the following disadvantages: the manual counting workload is large, and the area to be counted on a single wafer is too large, so that time and labor are wasted; the human factors are large, and the conditions of missing number, wrong number, repetition number and the like often occur; this ultimately results in a dislocation density that differs too much from the actual value. Furthermore, due to the manual counting, this method is often only suitable for low dislocation density, small size wafers.
At present, some new dislocation density measuring methods have been developed, for example, chinese patent application CN102721697A discloses a method and a system for detecting crystalline silicon dislocations. The method performs optical imaging on the corroded crystalline silicon, and obtains the dislocation density of the sample to be detected according to the relational expression between the corrosion pit gray pixel proportion and the dislocation density value. However, this method requires the establishment of a relationship between etch pit gray scale pixel ratio and dislocation density value for crystalline silicon standards and a different relationship for different series of samples. In addition, the method only considers the grey pixel factor of the image and does not consider the actual etch pit shape, such as: the long linear scratches are also recognized as etch pits due to image gradation problems, but the scratches do not belong to the etch pits.
Chinese patent application CN107356606A discloses a method for detecting dislocation density of a semiconductor wafer. The method judges whether the etching pits are effective or not by calculating the ratio a of the opening size L of the etching pits to the depth H. The method needs to establish a three-dimensional image of the corrosion pit, and the required device is complex; furthermore, this method does not give an effective detection method for heavily overlapped etch pits.
The chinese patent application CN1896727A discloses a method for detecting the defect type and density of GaN single crystal. The method needs to be combined with Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) for judgment, and a testing instrument for the data is expensive and complex to operate. In addition, the method needs to use Photoshop to divide the SEM image, count manually after printing to obtain the number of etch pits, and finally obtain the dislocation density.
As can be seen, the industrialization of detecting and counting the dislocation density of the wafer still has problems; it is of great significance to provide an automated measurement of dislocation density that is simple, can identify the overlap etch pits.
Disclosure of Invention
In view of the above, the present application proposes a method of measuring dislocation density, a dislocation density counting apparatus, and a non-transitory computer readable medium to solve the problem of inaccurate dislocation density measurement.
To this end, a first aspect of the present invention provides a method of measuring dislocation density, the method comprising:
acquiring an image of a measurement object;
detecting the etch pits in the acquired image according to preset etch pit screening conditions, and statistically calculatingAverage area value S of single etch pits in the acquired image0And the average boundary rectangle major-minor ratio R0；
Carrying out contour detection on a black shape in the acquired image to obtain a contour area S of the black shape and a long-short side ratio R of a boundary rectangle;
an outline area S based on the black shape, and a ratio R of a long side to a short side of a boundary rectangle to the average area value S0And the average boundary rectangle major-minor ratio R0Determining a number of etch pits for the black shape to determine a total number of etch pits in the acquired image; and
calculating a dislocation density of the measurement object based on a total number of etch pits in the acquired image and a total area of the acquired image.
A second aspect of the present invention provides a dislocation density counting apparatus comprising:
an image acquisition device for acquiring an image of a measurement object;
a processor configured to:
detecting the corrosion pits in the acquired image according to preset corrosion pit screening conditions, and statistically calculating the average area value S of the single corrosion pits in the acquired image0And the average boundary rectangle major-minor ratio R0；
Carrying out contour detection on a black shape in the acquired image to obtain a contour area S of the black shape and a long-short side ratio R of a boundary rectangle;
an outline area S based on the black shape, and a ratio R of a long side to a short side of a boundary rectangle to the average area value S0And the average boundary rectangle major-minor ratio R0Determining a number of etch pits for the black shape to determine a total number of etch pits in the acquired image; and is
Calculating a dislocation density of the measurement object based on a total number of etch pits in the acquired image and a total area of the acquired image.
A third aspect of the invention provides a non-transitory computer readable medium having computer readable instructions which, when executed by a computer device, cause the computer device to perform the method according to the first aspect described above.
A fourth aspect of the present invention provides a dislocation density counting apparatus, comprising:
an image acquisition device for acquiring an image of a measurement object; and
an image processing device for receiving the image of the measurement object acquired by the image acquisition device, performing dislocation density counting on the image of the measurement object, and displaying the counting result;
the image acquisition equipment comprises a light source for adjusting the field brightness of the image acquisition equipment, wherein the light source is a cold white light source with the color temperature of 5000-.
In an embodiment of the present invention, each black shape is judged to correspond to several etch pits by comparing the outline area and the boundary rectangle long-short side ratio of the black shape in the image with the average area value of a single etch pit and the average boundary rectangle long-short side ratio. This embodiment is effective to determine that the overlapping region of etch pits contains several etch pits, thereby enabling accurate statistics of the total number of etch pits. In addition, the cold white light source in the range can make the color rendering index higher and the image clearer, thereby being capable of effectively helping to distinguish the background from the corrosion pits and being convenient for identifying the corrosion pits.
In addition, the dislocation density measuring method of the invention has the characteristics of crystal structure and pattern; thus, the overlapping etch pits can be effectively identified and counted, and the influence of the non-etch pit pattern such as a long scratch on the total number can be eliminated.
Compared with the prior art, the invention has the following advantages:
1) compared with the traditional template method detection counting means, the method has high automation degree, does not need to count the corrosion pits manually, avoids the conditions of error number, leakage number and the like, improves the efficiency, and has more remarkable advantages particularly for semiconductor wafers with high dislocation density;
2) the etching pits can be effectively identified according to the shapes of the etching pits of different semiconductor wafers, and the effective number of the overlapped etching pits can be counted; the method can filter non-corrosion pits (such as scratches and the like), improve counting precision, truly reflect dislocation density information of the wafer, really and effectively control the quality of the wafer, and track and analyze the quality problem of the wafer according to the counting result.
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In order to more clearly illustrate the technical solutions of the present application, the drawings needed to be used in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts. In the drawings:
fig. 1 illustrates a schematic view of a dislocation density counting apparatus according to an embodiment of the present invention;
FIG. 2 illustrates a schematic view of the profile of a single etch pit of a GaAs wafer;
FIG. 3 illustrates a schematic diagram of the profile of a single etch pit of an InP wafer;
FIG. 4 illustrates a schematic profile of a single etch pit of a GaN wafer;
FIG. 5 illustrates a flow chart of a method of measuring dislocation density according to one embodiment of the present invention;
FIG. 6 illustrates a flow diagram of a method of determining a total number of etch pits in an acquired image according to one embodiment of the invention;
FIG. 7-1 illustrates a schematic diagram of determining a bounding rectangle for a semiconductor wafer image in accordance with one embodiment of the present invention;
FIG. 7-2 illustrates a schematic diagram of determining a bounding rectangle of an image of a semiconductor wafer, wherein the bounding rectangle has an oblique angle, according to one embodiment of the present invention; and
figures 7-3 illustrate a schematic diagram for determining a bounding rectangle for an image of a semiconductor wafer in which the outline of a single etch pit is hexagonal, according to one embodiment of the present invention.
Description of the reference numerals
10 support flat bottom
101 support
102 image acquisition device support
103 bracket connecting piece
20 object stage
30 vacuum chuck
40 zoom lens
50 CCD (charged coupled device) camera
60 LED white light source
70 image processing apparatus
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description and claims of this application and the description of the above figures are intended to cover non-exclusive inclusions.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
If steps are recited in sequence in this specification or claims, this does not necessarily imply that the embodiments or aspects are limited to the order presented. Rather, it is conceivable that the steps are also performed in a different order or in parallel with each other, unless one step is built on another, which absolutely requires that the built steps are performed subsequently (which will however become clear in the individual case). Thus, the order of presentation may be a preferred embodiment.
A first aspect of the present invention provides a method of measuring dislocation density, the method comprising:
acquiring an image of a measurement object;
detecting the corrosion pits in the acquired image according to preset corrosion pit screening conditions, and statistically calculating the average area value S of the single corrosion pits in the acquired image0And the average boundary rectangle major-minor ratio R0；
Carrying out contour detection on a black shape in the acquired image to obtain a contour area S of the black shape and a long-short side ratio R of a boundary rectangle;
an outline area S based on the black shape, and a ratio R of a long side to a short side of a boundary rectangle to the average area value S0And the average boundary rectangle major-minor ratio R0Determining a number of etch pits for the black shape to determine a total number of etch pits in the acquired image; and calculating the dislocation density of the measurement object based on the total number of etch pits in the acquired image and the total area of the acquired image.
In the above-described embodiment of the present invention, it is judged that each black shape corresponds to several etch pits by comparing the outline area and the boundary rectangle long-short side ratio of the black shape in the image with the average area value of a single etch pit and the average boundary rectangle long-short side ratio. This embodiment is effective to determine that the overlapping region of etch pits contains several etch pits, thereby enabling accurate statistics of the total number of etch pits.
In some embodiments of the first aspect of the present invention, the step of determining the number of etch pits for the black shape comprises:
when in use
Figure BDA0003389287920000061
And is
Figure BDA0003389287920000062
Then, the number of etch pits of the black shape is recorded as 1, where k10And k11A single etch pit filtration coefficient;
when in use
Figure BDA0003389287920000063
And is
Figure BDA0003389287920000064
Then, the number of etch pits for the black shape is recorded as 2, where k21Two overlapping etch pit filter coefficients; and is
When in use
Figure BDA0003389287920000065
And is
Figure BDA0003389287920000066
Then, the number of etch pits for the black shape is recorded as 3, where k31Three overlap etch pit filter coefficients. In some embodiments, k is21＝2*k11And k is31＝3*k11。
In the above embodiment, the number of overlapping etch pits is distinguished by the set etch pit filtering coefficient, non-etch pits (e.g., scratches, etc.) are excluded, the technical accuracy is improved, and the etch pit density information of the measurement object is truly reflected.
In some embodiments of the first aspect of the present invention, the step of determining the total number of etch pits in the acquired image comprises:
when the total number of etch pit overlap regions in the acquired image exceeds a preset threshold or the acquired image contains a plurality of etch pit overlap regions with more than 3 overlapping etch pits, calculating the total number of etch pits in the acquired image according to the following formula:
total number of etch pits ═ total area of black shapes in image/average area value of single etch pit S0。
In the above embodiment, when the number of etch pits is too large, for example, there are a plurality of etch pit overlapping regions or a plurality of etch pit regions have more than 3 overlapping etch pits, the counting is performed using the idea of global statistics; specifically, the total area of all the etch pits in the target image is obtained, and global statistical counting is performed according to the total area, and counting is not performed according to the etch pit filtering condition. In some embodiments, the total number of etch pit overlap regions in the acquired image exceeds a preset threshold of 10. The preset threshold is an empirical value obtained from a large number of experiments, and different preset thresholds may be set for different test subjects.
In some embodiments of the first aspect of the present invention, the method acquires a plurality of images at a plurality of different positions of the measurement object, and counts the total number of etch pits in the plurality of images to calculate the dislocation density of the measurement object. In this embodiment, the total number of etch pits at a plurality of different locations of the measurement object is counted, and the total number of etch pits is divided by the total area of the locations to obtain the dislocation density of the measurement object. This embodiment avoids the dislocation distribution of the measurement object from being uneven, and extreme distribution of a single image may occur, resulting in inaccurate measurement.
In some embodiments of the first aspect of the present invention, the method comprises: after acquiring the image of the measurement object, gradation processing is performed on the acquired image. When a color image is acquired by a color-mode camera, it is necessary to perform gradation processing on the image in order to identify the etch pits. In a preferred embodiment, the camera that acquires the image is a black and white mode camera; the image acquired by such a camera can be directly utilized without performing a gradation process.
In some embodiments of the first aspect of the present invention, the method comprises subjecting the acquired image to a binarization process. The image after the binarization processing is easier to be subjected to contour recognition.
In some embodiments of the first aspect of the present invention, the method comprises:
corroding the measurement object before acquiring the image of the measurement object;
and the etch pit screening condition is an etch pit shape determined in accordance with a material type of the measurement object and a type of an etchant.
In some embodiments of the first aspect of the present invention, the illumination source used in acquiring the measured image is a cool white light source with a color temperature of 5000-.
In further embodiments of the first aspect of the present invention, the illumination source employed in acquiring said measured image is a cold white light source having a CIE1931 color coordinate range of (0.31 ) - (0.33, 0.33). In a preferred embodiment, the cold white light source is an LED cold white light source.
Through the cold white light source in the range, the color rendering index is higher, and the image is clearer, so that the background and the corrosion pits can be effectively distinguished, and the corrosion pits are convenient to identify. The color temperature and color coordinates of the illumination source may be controlled by instructions as will be appreciated by those skilled in the art.
In some implementations of the first aspect of the invention, the normal direction of a lens acquiring the image is perpendicular to the surface of the measurement object. By such an arrangement, the acquired image can be prevented from being deformed, namely, the shape of the etching pits can be prevented from being deformed, so that the outline area S of the etching pits and the long-short side ratio R of the boundary rectangle can be obtained. In a preferred embodiment, the lens is an optical transition focus lens, capable of switching between 5X, 10X and 20X.
In some embodiments of the first aspect of the present invention, the pixel size of the camera acquiring the image is no greater than 2.0 μm x 2.0 μm. The minimum size of the etch pits is usually around 10 μm × 10 μm, and by setting the pixel size in this way, the resolution of the etch pits in the picture is ensured.
A second aspect of the present invention provides a dislocation density counting apparatus comprising:
an image acquisition device for acquiring an image of a measurement object;
a processor configured to:
detecting the corrosion pits in the acquired image according to preset corrosion pit screening conditions, and statistically calculating the average area value S of the single corrosion pits in the acquired image0And the average boundary rectangle major-minor ratio R0；
Carrying out contour detection on a black shape in the acquired image to obtain a contour area S of the black shape and a long-short side ratio R of a boundary rectangle;
an outline area S based on the black shape, and a ratio R of a long side to a short side of a boundary rectangle to the average area value S0And the average boundary rectangle major-minor ratio R0Determining a number of etch pits for the black shape to determine a total number of etch pits in the acquired image; and is
Calculating a dislocation density of the measurement object based on a total number of etch pits in the acquired image and a total area of the acquired image.
In some embodiments of the second aspect of the present invention, the processor is configured to determine the number of etch pits for the black shape based on the following filtering conditions:
when in use
Figure BDA0003389287920000081
And is
Figure BDA0003389287920000082
Then, the number of etch pits of the black shape is recorded as 1, where k10And k11A single etch pit filtration coefficient;
when in use
Figure BDA0003389287920000083
And is
Figure BDA0003389287920000084
Then, the number of etch pits for the black shape is recorded as 2, where k21The two overlapping etch pits have a filter coefficient; and is
When in use
Figure BDA0003389287920000091
And is
Figure BDA0003389287920000092
Then, the number of etch pits for the black shape is recorded as 3, where k31Three overlap etch pit filter coefficients. In some embodiments, k is21＝2*k11And k is31＝3*k11。
In some embodiments of the second aspect of the present invention, the processor is configured to:
when the total number of etch pit overlap regions in the acquired image exceeds a preset threshold or the acquired image contains a plurality of etch pit overlap regions with more than 3 overlapping etch pits, calculating the total number of etch pits in the acquired image according to the following formula:
total number of etch pits ═ total area of black shapes in image/average area value of single etch pit S0。
In some embodiments of the second aspect of the present invention, the image acquisition device acquires a plurality of images at a plurality of different locations of the measurement object, and the processor is configured to count a total number of etch pits in the plurality of images to calculate the dislocation density of the measurement object.
In some embodiments of the second aspect of the present invention, the processor is configured to: after acquiring the image of the measurement object, gradation processing is performed on the acquired image.
In some embodiments of the second aspect of the present invention, the processor is configured to perform binarization processing on the acquired image.
In some embodiments of the second aspect of the present invention, the etch pit screening condition is an etch pit shape determined according to a type of material of the measurement object and a type of etchant.
In some embodiments of the second aspect of the present invention, the dislocation density counting apparatus comprises a light source for adjusting the brightness of the field of view of the image capture device, the light source being a cold white light source with a color temperature of 5000-.
In some embodiments of the second aspect of the present invention, the dislocation density counting device comprises a light source for adjusting the field brightness of the image capture device, the light source being a cold white light source with a CIE1931 color coordinate range of (0.31 ) - (0.33, 0.33). In a preferred embodiment, the cold white light source is an LED cold white light source.
In some embodiments of the second aspect of the present invention, the image capturing device comprises a lens, a normal direction of the lens being perpendicular to a surface of the measurement object.
In some embodiments of the second aspect of the present invention, the image capture device comprises a camera having a pixel size of no more than 2.0 μm x 2.0 μm.
A third aspect of the invention provides a non-transitory computer readable medium having computer readable instructions which, when executed by a computer device, cause the computer device to perform the method according to the first aspect described above.
A fourth aspect of the present invention provides a dislocation density counting apparatus, comprising:
an image acquisition device for acquiring an image of a measurement object; and
an image processing device for receiving the image of the measurement object acquired by the image acquisition device, performing dislocation density counting on the image of the measurement object, and displaying the counting result;
the image acquisition equipment comprises a light source for adjusting the field brightness of the image acquisition equipment, wherein the light source is a cold white light source with the color temperature of 5000-.
In some embodiments of the fourth aspect of the present invention, the image capture device comprises a camera having a pixel size of no more than 2.0 μm x 2.0 μm.
In some embodiments of the fourth aspect of the present invention, the dislocation density counting apparatus comprises a stage for placing the measurement object. The distance between the light source and the surface of the object stage is based on the convenience of operation and the best detection result, and is generally between 5 and 55 cm, preferably between 10 and 30 cm.
In some embodiments of the fourth aspect of the present invention, the image capture device comprises a lens, a normal direction of the lens being perpendicular to a surface of the stage. This embodiment can reflect the etch pit image as accurately as possible, avoiding the etch pit image distortion that may be caused by shading or the like at oblique incidence.
In some embodiments of the fourth aspect of the present invention, the dislocation density counting apparatus includes a stage for placing the measurement object and a vacuum chuck, the stage is provided with a through hole, and the vacuum chuck is disposed below the stage to fix the measurement object on the stage through the through hole. After acquiring one image of the measurement object, the stage needs to be moved to acquire an image at another position of the measurement object; however, the movement of the object to be measured (especially a large wafer) may be caused during the movement of the stage. Through the vacuum chuck, can be with the harmless fixing of semiconductor wafer on the objective table, guarantee simultaneously that the wafer can not remove at the in-process that removes the objective table.
In some embodiments of the fourth aspect of the invention, the support mechanism of the object table is provided with a rail system so that it can move in a horizontal direction.
In some embodiments of the fourth aspect of the present invention, the image processing apparatus includes a detection section that performs etch pit detection analysis on the acquired image based on a material type of the measurement object to obtain a dislocation density of the measurement object.
In some embodiments of the fourth aspect of the present invention, the detection component comprises:
1) an image reading module that reads the acquired image;
2) an etch pit screening module for receiving the information of the image reading module, setting the screening condition of the etch pits according to the etch pit shapes of different materials, and obtaining the average area value S of a single etch pit0And the average boundary rectangle major-minor ratio R0；
3) The contour detection module receives the information of the image reading module and carries out contour detection on the black shape in the acquired image to obtain the contour area S of the black shape and the length-to-side ratio R of the boundary rectangle;
4) an etch pit filtering condition module which receives information of the etch pit screening module and the contour detection module and sets an etch pit filtering condition:
when in use
Figure BDA0003389287920000111
And is
Figure BDA0003389287920000112
Then, the number of etch pits of the black shape is recorded as 1, where k10And k11A single etch pit filtration coefficient;
when in use
Figure BDA0003389287920000113
And is
Figure BDA0003389287920000114
Then, the number of etch pits for the black shape is recorded as 2, where k21Two overlapping etch pit filter coefficients;
when in use
Figure BDA0003389287920000115
And is
Figure BDA0003389287920000116
Then, the number of etch pits for the black shape is recorded as 3, where k31The filter coefficients for three overlapping etch pits; and is
When in use
Figure BDA0003389287920000117
Or
Figure BDA0003389287920000118
When, if
Figure BDA0003389287920000119
Then pair
Figure BDA00033892879200001110
Rounded to obtain the number of etch pits in the black shape, and if
Figure BDA00033892879200001111
Then pair
Figure BDA00033892879200001112
Rounding to obtain the number of the etch pits in the black shape; and
5) and an etch pit density calculation module which finds the total number of etch pits of the acquired image by the above counting, and calculates the etch pit density of the measurement object as the dislocation density of the measurement object based on the total area of the acquired image and the total number of etch pits in the acquired image. In some embodiments, k is21＝2*k11And k is31＝3*k11。
In some embodiments of the fourth aspect of the present invention, the corrosion pit filtration conditions comprise:
when the total number of etch pit overlap regions in the acquired image exceeds a preset threshold or the acquired image contains a plurality of etch pit overlap regions with more than 3 overlapping etch pits, calculating the total number of etch pits in the acquired image according to the following formula:
total number of etch pits ═ total area of black shapes in image/average area value of single etch pit S0。
In some embodiments of the fourth aspect of the present invention, the detection means comprises an image processing module that performs binarization processing on the captured image.
In some embodiments of the fourth aspect of the present invention, the detection component comprises an image processing module that performs grayscale processing on the captured image.
In a preferred embodiment, the image processing apparatus comprises an inspection component that performs etch pit inspection analysis on the acquired image based on the type of material of the semiconductor wafer to obtain the dislocation density of the semiconductor wafer.
In a preferred embodiment, the image processing apparatus includes a display unit for displaying the dislocation density of the semiconductor wafer.
In a preferred embodiment, the apparatus further comprises a support mechanism for the stage and a support mechanism for the image capturing device, wherein the support mechanisms for the stage and the image capturing device are adjustable in position, height (i.e., position in the vertical direction), and angle to ensure that the position between the support mechanisms for the stage and the image capturing device (in fact, the position between the semiconductor wafer carried on the stage and the image capturing device) is optimized. It will be appreciated that all of these adjustments may be implemented automatically based on control instructions and actuating devices in the apparatus.
In the present invention, the bounding rectangle is defined as: taking the center of the image of the selected measurement object (such as a wafer) as an origin, boundary points in four directions of-x, x, y and y are selected, two groups of parallel lines are formed by passing the boundary points, and a rectangle obtained by intersection is a boundary rectangle, as shown in fig. 7-1, and the boundary rectangle of the wafer is shown as a frame line. On the basis of determining the boundary rectangle, the ratio of the long side/the short side of the rectangle is obtained, namely the ratio of the long side to the short side of the boundary rectangle. If the selected wafer image has a certain tilt angle with respect to the horizontal, as shown in fig. 7-2, the bounding rectangle is formed to have a certain tilt angle, but the value of the ratio of the long to short sides of the bounding rectangle is not affected. Fig. 7-1 and 7-2 show etch pits having a long octagonal profile, and similarly fig. 7-3 shows etch pits having a regular hexagonal profile, with the bounding rectangles of the wafer shown as box lines.
In some embodiments of the invention, the corrosion pit filtration coefficient is obtained based on production big data; specifically, the sizes of the corrosion pits of the same type of product are counted to obtain the numerical value interval of the corrosion pits of the product. Generally, the length-to-edge ratio of the boundary rectangle of a single etch pit in 1000 regions of the product a is counted, for example, the minimum value is 1.4, the maximum value is 1.7, the detected object at this time also belongs to the product a, and the average length-to-edge ratio of the boundary rectangle is 1.5, then k is10＝1.4/1.5＝0.93，k111.7/1.5-1.13. In addition, etch pit filtration coefficient k21Value k11*2，k31Value k113. about.3; thus, in this particular embodiment k21＝k11*2＝2.26，k31＝k113 ═ 3.39. It will be appreciated that the greater the amount of data employed, the more accurate the resulting corrosion pit filtration coefficient is; in some embodiments, the boundary rectangle major to minor ratio values for a single etch pit for 1000 regions of 1000 a products may be counted.
Then, according to
Figure BDA0003389287920000131
And
Figure BDA0003389287920000132
the number of etch pits is determined in the range of (1): when in use
Figure BDA0003389287920000133
And is
Figure BDA0003389287920000134
The number of etch pits for the black shape was recorded as 1; when in use
Figure BDA0003389287920000135
And is
Figure BDA0003389287920000136
Then, the number of etch pits for the black shape was recorded as 2; when in use
Figure BDA0003389287920000137
And is
Figure BDA0003389287920000138
The number of etch pits in the black shape was recorded as 3.
When the number of the etch pits is too large, for example, a particularly multi-etch-pit overlapped region or a multi-etch-pit overlapped region has more than 3 overlapped etch pits, the counting is performed by adopting the concept of the overall statistics. Namely: and obtaining the total area of all the corrosion pits in the target image, and carrying out global statistical counting according to the total area instead of counting according to the corrosion pit filtering condition. Specifically, the total number of etch pits is the total area of the etch pits/average area value S of a single etch pit0. In the case where there is an overlap of etch pits, meaning that there are many etch pits in the field of view region, it is still possible to count substantially all of the etch pits in the wafer image, given that the determination of the bounding rectangle can be adjusted to the overlap.
In one embodiment of the invention, the S of a GaAs wafer is measured0Setting the screening condition of the corrosion pits as a non-overlapped outline, wherein the outline is a long octagon, as shown in FIG. 2; determination of S of InP wafer0Then, the screening conditions for the etch pits were set to non-overlapping circles, as shown in fig. 3; the GaN wafer was measured, and the screening conditions for the etch pits were set to non-overlapping regular hexagons, as shown in fig. 4. It should be understood that the etch pits may be shaped differently depending on the material of the wafer. For example, the etch pits for GaAs wafers may be long octagons; the etch pits of the InP wafer may be circular; the etch pits of the SiC wafer can be regular hexagons or circles; the etch pits of the GaN wafer and the AlN wafer can be regular hexagons; etch pits for InN wafers may be hexagonal (2 short sides 4 long sides); the etch pits of the ZnO wafer can be hexagonal; the etch pits of the Ga2O3 wafer may be quadrilateral, hexagonal or elongated.
In the present invention, prior to image acquisition of a semiconductor wafer, a pre-treatment of the wafer is required, which pre-treatment process is known to those skilled in the art. Pre-processing includes edging and grinding the wafer to form a thickness of the wafer, for example 2-3 inches; the saw kerf is then removed and the wafer is etched with an acidic or basic etchant for a time sufficient to completely expose the wafer to dislocations or defects, for example, 10-25 minutes. It will be appreciated that different types of material to be tested and different types of etchant require different etch times.
As shown in fig. 1, a semiconductor dislocation density counting apparatus of the present invention includes an image pickup device and an image processing device 70; the image pickup device includes a CCD camera 50 and a zoom lens 40, and an image of the semiconductor crystal placed on the stage 20 is picked up by the CCD camera 50 and the zoom lens 40 and formed and transmitted to the image processing device 70 for dislocation density counting.
The device also comprises a supporting mechanism of the object stage 20 and a supporting mechanism of the image acquisition equipment, wherein the supporting mechanism of the object stage 20 and the supporting mechanism of the image acquisition equipment are adjustable in position, height and angle.
The support mechanism of the object stage 20 comprises a support flat bottom 10 and a support 101; the supporting mechanism of the image acquisition equipment comprises a bracket connecting piece 103 and an image acquisition equipment supporting piece 102; the bracket supporting piece 101 is fixed on the bracket flat bottom 10, and the bracket connecting piece 103 is pivoted with the image acquisition equipment supporting piece 102; the stand connecting member 103 is pivotally connected to the stand supporting member 101. The image capturing device support 102 fixes the CCD camera 50, the zoom lens 40 and the LED white light source 60. A guide rail system is arranged below the support flat bottom 10 of the object stage 20, so that the object stage 20 can do plane motion along the transverse direction and the longitudinal direction; the stage 20 is provided with a through hole, and the bottom of the stage 20 is provided with a vacuum chuck 30, and the vacuum chuck 30 can fix the semiconductor wafer on the stage 20 through the through hole without damage.
The support mechanism of the object stage 20 and the support mechanism of the image acquisition device can be adjusted to make the normal direction of the lens 40 perpendicular to the surface of the object stage 20, so that the normal direction of the lens 40 is ensured to be at right angle with the surface of the semiconductor wafer carried on the surface of the object stage 20; at the same time, the distance between the lens 40 and the surface of the object stage 20 can be adjusted to facilitate the operation and obtain the best detection result, for example, the distance can be between 5cm and 55 cm, preferably 10 cm and 30 cm.
Fig. 5 illustrates a flow chart of a method 500 of measuring dislocation density according to one embodiment of the present invention. As shown in fig. 5, by the dislocation density counting apparatus shown in fig. 1, at step 502, an image of the measurement object is acquired. After the image is acquired, in step 504, the etch pits in the acquired image are detected based on preset etch pit screening conditions, and the average area value S of the single etch pits in the acquired image is statistically calculated0And the average boundary rectangle major-minor ratio R0(ii) a In step 506, the outline of the black shape in the acquired image is detected, and the outline area S of the black shape and the long-short side ratio R of the boundary rectangle are obtained. Then, in step 508, the outline area S based on the black shape and the long-short side ratio R and the average area value S of the bounding rectangle0And the average boundary rectangle major-minor ratio R0Determining the number of etch pits for the black shape to determine the total number of etch pits in the acquired image. Finally, at step 510, the dislocation density of the measurement object is calculated based on the total number of etch pits in the acquired image and the total area of the acquired image.
Fig. 6 illustrates a flow diagram of a method of determining a total number of etch pits in an acquired image according to one embodiment of the invention. As shown in fig. 6, in step 602, the outline area S of one black shape and the long-short side ratio R of the bounding rectangle in the acquired image are detected. Then, the outline area S of the black shape, the ratio R of the long side to the short side of the boundary rectangle, and the average area value S are determined0And the average boundary rectangle length-to-edge ratio R0The relationship (2) of (c). In step 604, it is determined whether the conditions are satisfied
Figure BDA0003389287920000151
And is
Figure BDA0003389287920000152
Wherein k is10And k11The filtration coefficient is single corrosion pit. If the conditions in step 604 are met, the black-counted shape has 1 etch pit, stepStep 606; otherwise, go to step 608, and at step 608, determine whether the result is satisfied
Figure BDA00033892879200001511
And is
Figure BDA0003389287920000153
Wherein k is21Two overlap etch pit filter coefficients. If the conditions in step 608 are met, the blackened shape has 2 etch pits, step 610; otherwise, go to step 612, and at step 612, determine whether the condition is satisfied
Figure BDA0003389287920000154
And is
Figure BDA0003389287920000155
Wherein k is31Three overlap etch pit filter coefficients. If the conditions in step 612 are met, the blackened shape has 3 etch pits, step 614; otherwise, go to step 616, and at step 616, determine if the result satisfies
Figure BDA0003389287920000156
Or
Figure BDA0003389287920000157
If the condition in step 616 is not satisfied, the blackened shape has 0 etch pits, step 618; otherwise, go to step 620, and at step 620, determine whether the result satisfies
Figure BDA0003389287920000158
If the condition in step 620 is satisfied, then
Figure BDA0003389287920000159
Rounding the number of etch pits as black shapes, step 622; otherwise, go to step 624, and at step 624, pair
Figure BDA00033892879200001510
The number of etch pits rounded up as black shape. In determining the blackFollowing the number of etch pits for the color shapes, at step 626, it is determined whether the number of black shapes having overlapping etch pits is greater than a preset threshold or whether multiple black shapes are included in the image with more than 3 overlapping etch pits. If the condition in step 626 is met, then no more counts are made according to the etch pit filtering condition, but rather a global statistical count is made according to the total area, where the total number of etch pits in the image is the total area/average area value S of the black shapes in the image0Step 628. If the condition in step 626 is not met, then the process proceeds to step 630, the number of etch pits in the image is accumulated, and the process proceeds back to step 602 to determine the number of etch pits for the next black shape.
Examples
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and its several details are capable of modifications, permutations and combinations without departing from the spirit of the present invention.
It should be noted that the drawings provided in the present embodiment are only schematic illustrations of the basic concept of the present invention, and only show the components related to the present invention, rather than limiting the number, shape, size, manufacturing method and process window of the components in actual implementation, the type, number and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated. The process conditions involved in the examples can be varied reasonably within the effective window and achieve the effects disclosed by the present invention.
Example 1
The dislocation density of the GaAs wafer was counted using the semiconductor wafer dislocation density counting apparatus shown in fig. 1. The counting results were obtained as follows:
(1) taking the slices: taking a 3-inch GaAs wafer which is edged and ground, and removing saw lines;
(2) and (3) corrosion: etching the GaAs wafer by using high-temperature alkaline etching liquid for 10 minutes to completely expose dislocation or defect of the wafer;
(3) collecting: placing the etched GaAs wafer on an objective table, and adjusting the normal direction of a lens to form a right angle with the surface of the semiconductor wafer borne on the surface of the objective table; turning on an LED white light source, adjusting the distance between a lens and the surface of the objective table to be 26 cm, and adjusting the size of a view field to be 0.25cm2(0.5cm multiplied by 0.5cm), carrying out image acquisition on the corresponding area, and storing the image;
(4) and (3) treatment: carrying out gray scale processing on the acquired image to obtain a gray scale image with the etch pits, carrying out boundary identification on the etch pits, only selecting the etch pits which are not overlapped and have the long octagonal outline, and obtaining the average area S of the single etch pit0＝785pixel2(i.e., the square of the pixel) and the ratio of the long to short sides of the bounding rectangle R0＝3.3；
(5) Counting: when the length-side ratio R and the area S of the boundary rectangle of the outline region meet the following conditions:
Figure BDA0003389287920000161
and is
Figure BDA0003389287920000162
When the number of etch pits is +1, when
Figure BDA0003389287920000163
And is
Figure BDA0003389287920000164
Then, the number of the etch pits is + 2; when in use
Figure BDA0003389287920000165
And is
Figure BDA0003389287920000166
Then, etching the number of pits by +3 to finally obtain that the total number of the etching pits in the area is 73, and the calculated dislocation density is 292/cm 2;
(6) moving the wafer to the next area according to a certain directionRepeating the steps (3) to (5), and calculating the dislocation density to be 246/cm2；
(7) Repeating the counting, sequentially selecting 50 regions in total, averaging the dislocation densities of the 50 regions to obtain a GaAs wafer with the dislocation density of 269/cm2。
Example 2
The dislocation density of the InP wafer was counted using the semiconductor wafer dislocation density counting apparatus shown in fig. 1. The counting results were obtained as follows:
(1) taking the slices: taking a piece of 2-inch InP wafer which is edged and ground, and removing saw lines;
(2) and (3) corrosion: etching the InP wafer by using an acid etching solution for 20 minutes to completely expose the dislocation or defect of the wafer;
(3) collecting: placing the etched InP wafer on an objective table, and adjusting the normal direction of a lens to be at right angle to the surface of the semiconductor wafer borne on the surface of the objective table; turning on an LED white light source, adjusting the distance between a lens and the surface of the objective table to be 25cm, and adjusting the size of a view field to be 0.25cm2(0.5cm multiplied by 0.5cm), collecting the image of the area, and storing the image;
(4) and (3) treatment: carrying out gray scale processing on the collected image, properly carrying out binarization processing to obtain a black and white picture with corrosion pits, carrying out circular boundary identification on the corrosion pits, only selecting the non-overlapped corrosion pits with circular outlines, and obtaining the average area S of the single corrosion pits0＝343pixel2And the ratio of the length to the width of the boundary rectangle R0＝0.95；
(5) Counting: when the length-side ratio R and the area S of the boundary rectangle of the outline region meet the following conditions:
Figure BDA0003389287920000171
and is
Figure BDA0003389287920000172
When the number of etch pits is +1, when
Figure BDA0003389287920000173
And is
Figure BDA0003389287920000174
Then, the number of the etch pits is + 2; when in use
Figure BDA0003389287920000175
And is
Figure BDA0003389287920000176
Then, etching the number of pits by +3 to finally obtain that the total number of the etching pits in the area is 11, and the calculated dislocation density is 44/cm 2;
(6) moving the wafer to the next area according to a certain direction, repeating the steps (3) to (5), and calculating the dislocation density to be 26/cm2；
(7) Repeating the counting, sequentially selecting 50 regions in total, averaging the dislocation densities of the 50 regions to obtain the final dislocation density of the InP wafer of 35/cm2。
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A method of measuring dislocation density, the method comprising:
acquiring an image of a measurement object;
detecting the corrosion pits in the acquired image according to preset corrosion pit screening conditions, and statistically calculating the average area value S of the single corrosion pits in the acquired image0And the average boundary rectangle major-minor ratio R0；
Carrying out contour detection on a black shape in the obtained image to obtain a contour area S of the black shape and a long-short side ratio R of a boundary rectangle;
based on the blackThe outline area S of the color shape, and the ratio R of the long side to the short side of the boundary rectangle to the average area value S0And the average boundary rectangle major-minor ratio R0Determining a number of etch pits for the black shape to determine a total number of etch pits in the acquired image; and
calculating a dislocation density of the measurement object based on a total number of etch pits in the acquired image and a total area of the acquired image.
2. The method of claim 1, wherein the step of determining the number of etch pits for the black shape comprises: k is a radical of10
When in use
Figure FDA0003389287910000011
And is
Figure FDA0003389287910000012
Then, the number of etch pits of the black shape is recorded as 1, where k10And k11A single etch pit filtration coefficient;
when in use
Figure FDA0003389287910000013
And is
Figure FDA0003389287910000014
Then, the number of etch pits for the black shape is recorded as 2, where k21Two overlapping etch pit filter coefficients; and is
When in use
Figure FDA0003389287910000015
And is
Figure FDA0003389287910000016
Then, the number of etch pits for the black shape is recorded as 3, where k31Three overlap etch pit filter coefficients.
3. The method of claim 1 or 2, wherein the step of determining the total number of etch pits in the acquired image comprises:
when the total number of etch pit overlap regions in the acquired image exceeds a preset threshold or the acquired image contains a plurality of etch pit overlap regions with more than 3 overlapping etch pits, calculating the total number of etch pits in the acquired image according to the following formula:
total number of etch pits ═ total area of black shapes in image/average area value of single etch pit S0。
4. A method according to any one of claims 1 to 3, wherein the method acquires a plurality of images at a plurality of different positions of the measurement object, and counts the total number of etch pits in the plurality of images to calculate the dislocation density of the measurement object.
5. The method according to any one of claims 1 to 4, characterized in that the method includes performing binarization processing on the acquired image.
6. The method according to any one of claims 1 to 5, characterized in that it comprises:
corroding the measurement object before acquiring the image of the measurement object; and is
The etch pit screening condition is an etch pit shape determined in accordance with a material type of the measurement object and a type of an etchant.
7. The method according to any one of claims 1 to 6, wherein the illumination light source used in acquiring the measured image is a cool white light source with a color temperature of 5000-6000K.
8. A dislocation density counting device, comprising:
an image acquisition device for acquiring an image of a measurement object;
a processor configured to:
detecting the corrosion pits in the acquired image according to preset corrosion pit screening conditions, and statistically calculating the average area value S of the single corrosion pits in the acquired image0And the average boundary rectangle major-minor ratio R0；
Carrying out contour detection on a black shape in the acquired image to obtain a contour area S of the black shape and a long-short side ratio R of a boundary rectangle;
an outline area S based on the black shape, and a ratio R of a long side to a short side of a boundary rectangle to the average area value S0And the average boundary rectangle major-minor ratio R0Determining a number of etch pits for the black shape to determine a total number of etch pits in the acquired image; and is
Calculating a dislocation density of the measurement object based on a total number of etch pits in the acquired image and a total area of the acquired image.
9. A non-transitory computer readable medium having computer readable instructions which, when executed by a computer device, cause the computer device to perform the method of claim 8.
10. A dislocation density counting device, the device comprising:
an image acquisition device for acquiring an image of a measurement object; and
an image processing device (70) for receiving the image of the measurement object acquired by the image acquisition device, performing dislocation density counting on the image of the measurement object, and displaying the counting result;
the image acquisition equipment comprises a light source (60) used for adjusting the field brightness of the image acquisition equipment, wherein the light source (60) is a cold white light source with the color temperature of 5000-.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115272568A (en) * 2022-07-12 2022-11-01 重庆大学 Dislocation interface characteristic three-dimensional visualization method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115272568A (en) * 2022-07-12 2022-11-01 重庆大学 Dislocation interface characteristic three-dimensional visualization method

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