CN114114533A - Three-dimensional optical waveguide modulation structure and preparation method thereof - Google Patents

Three-dimensional optical waveguide modulation structure and preparation method thereof Download PDF

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Publication number
CN114114533A
CN114114533A CN202111443769.7A CN202111443769A CN114114533A CN 114114533 A CN114114533 A CN 114114533A CN 202111443769 A CN202111443769 A CN 202111443769A CN 114114533 A CN114114533 A CN 114114533A
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optical waveguide
waveguide
coupling
main transmission
substrate
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CN114114533B (en
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郑奇
刘丰满
孙思维
阳鹏
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National Center for Advanced Packaging Co Ltd
Shanghai Xianfang Semiconductor Co Ltd
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National Center for Advanced Packaging Co Ltd
Shanghai Xianfang Semiconductor Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002Three-dimensional structures
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/1204Lithium niobate (LiNbO3)
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12142Modulator

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention provides a three-dimensional optical waveguide modulation structure and a preparation method thereof, wherein the three-dimensional optical waveguide modulation structure comprises the following components: a substrate; the optical waveguide is positioned in the substrate and comprises a main transmission optical waveguide, a transition optical waveguide and an edge optical waveguide, wherein the transition optical waveguide is connected with the main transmission optical waveguide and the edge optical waveguide, and the main transmission optical waveguide and the edge optical waveguide have different depths in the substrate; the coupling waveguide is positioned on the surface of one side of the substrate, the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide; and the lithium niobate film is positioned on one side of the coupling waveguide, which faces away from the substrate. The three-dimensional optical waveguide modulation structure reduces the loss rate of light in the optical waveguide transmission process.

Description

Three-dimensional optical waveguide modulation structure and preparation method thereof
Technical Field
The invention relates to the technical field of optical communication, in particular to a three-dimensional optical waveguide modulation structure and a preparation method thereof.
Background
The modulator is used as a core device in an optical interconnection technology and is applied to a plurality of fields such as a coherent optical fiber communication system, an optical fiber cable television system, an optical sensor, a wireless communication system and other optical fiber analog systems, however, in the modulator structure in the prior art, the loss rate of light in the optical waveguide transmission process is high.
Thus, existing modulator structures are subject to improvement.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the problem of high loss rate of light in the optical waveguide transmission process in the modulator structure in the prior art.
In order to solve the above technical problem, the present invention provides a modulator structure comprising: a substrate; the optical waveguide is positioned in the substrate and comprises a main transmission optical waveguide, a transition optical waveguide and an edge optical waveguide, wherein the transition optical waveguide is connected with the main transmission optical waveguide and the edge optical waveguide, and the main transmission optical waveguide and the edge optical waveguide have different depths in the substrate; the coupling waveguide is positioned on the surface of one side of the substrate, the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide; and the lithium niobate film is positioned on one side of the coupling waveguide, which faces away from the substrate.
Optionally, a vertical distance between a top surface of the main transmission optical waveguide and a surface of the substrate facing the coupling waveguide is 200nm to 500 nm.
Optionally, the refractive index of the coupling waveguide is greater than the refractive index of the optical waveguide and less than the refractive index of the lithium niobate film.
Optionally, the edge optical waveguide includes a first edge optical waveguide and a second edge optical waveguide; the transition optical waveguide comprises a first transition optical waveguide and a second transition optical waveguide, the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide.
Optionally, the coupling waveguide includes a first coupling waveguide and a second coupling waveguide arranged in a stack; the three-dimensional optical waveguide modulation structure further comprises: a cladding film positioned between the first coupling waveguide and the second coupling waveguide, the cladding film having a refractive index that is less than a refractive index of the first coupling waveguide and a refractive index of the second coupling waveguide.
Optionally, the thickness of the first coupling waveguide is 200nm to 300 nm.
Optionally, the second coupling waveguide has a thickness of 200nm to 300 nm.
Optionally, the thickness of the cladding film is 400nm-500 nm.
Optionally, the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
Optionally, the coupling waveguide is a single-layer structure; the lithium niobate film is in contact with the surface of the coupling waveguide on the side opposite to the substrate.
Optionally, the thickness of the coupling waveguide is 200nm to 300 nm.
Optionally, the method further includes: and the modulation electrode is positioned on the surface of one side, back to the main transmission optical waveguide, of the lithium niobate film.
The invention also provides a preparation method of the three-dimensional optical waveguide modulation structure, which is characterized by comprising the following steps: providing a substrate; forming an optical waveguide within the substrate, the step of forming the optical waveguide comprising: forming a main transmission optical waveguide; forming a transition optical waveguide; forming an edge optical waveguide, wherein the transition optical waveguide is connected with the main transmission optical waveguide and the edge optical waveguide, and the main transmission optical waveguide and the edge optical waveguide have different depths in the substrate; forming a coupling waveguide on one side surface of the substrate, wherein the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than that from the coupling waveguide to the edge optical waveguide; and forming a lithium niobate film on one side of the coupling waveguide, which faces away from the substrate.
Optionally, a vertical distance between a top surface of the main transmission optical waveguide and a surface of the substrate facing the coupling waveguide is 200nm to 500 nm.
Optionally, the process for forming the optical waveguide is a femtosecond laser pulse process.
Optionally, the parameters of the femtosecond laser pulse process include: the wavelength is 1020nm-1030nm, the repetition frequency is 490kHz-510kHz, the average power is 100mW-1200mW, the scanning speed is 50um/s-2000um/s, and the scanning times are 1-20.
Optionally, the step of forming the edge optical waveguide includes: forming a first edge optical waveguide and a second edge optical waveguide; the step of forming the transition optical waveguide comprises: and forming a first transition optical waveguide and a second transition optical waveguide, wherein the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide.
Optionally, the step of forming the coupling waveguide comprises: forming a first coupling waveguide on one side surface of the substrate; forming a second coupling waveguide on a side of the first coupling waveguide facing away from the substrate; the method of making the modulator structure further comprises: before the second coupling waveguide is formed, a cladding film is formed on the surface of the first coupling waveguide, which is opposite to the substrate, and the refractive index of the cladding film is smaller than that of the first coupling waveguide and that of the second coupling waveguide.
Optionally, the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
Optionally, the coupling waveguide is a single-layer structure; the steps of forming the coupling waveguide are: and forming an initial coupling waveguide on the surface of the substrate, and removing part of the initial coupling waveguide to enable the initial coupling waveguide to form a coupling waveguide.
Optionally, the method further includes: and forming a modulation electrode on one side of the lithium niobate film, which is back to the main transmission optical waveguide.
The technical scheme of the invention has the following advantages:
the three-dimensional optical waveguide modulation structure provided by the invention comprises a main transmission optical waveguide, a transition optical waveguide and an edge optical waveguide, wherein the transition optical waveguide is connected with the main transmission optical waveguide and the edge optical waveguide, the depths of the main transmission optical waveguide and the edge optical waveguide in a substrate are different, light in the main transmission optical waveguide is coupled to enter a lithium niobate film through a coupling waveguide, the edge optical waveguide is used for being coupled with an external optical fiber, and the transition optical waveguide is used for connecting the edge optical waveguide and the main transmission optical waveguide so that the optical waveguides are continuous; the continuity of the optical waveguide reduces the loss rate of light in the transmission process of the optical waveguide; since the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide, the coupling efficiency is high, and the coupling loss is reduced. The coupling waveguide and the main transmission optical waveguide are arranged oppositely, the coupling waveguide is not required to be aligned with the edge optical waveguide, and the coupling efficiency of the coupling waveguide and the optical waveguide is improved.
Further, the refractive index of the coupling waveguide is larger than the refractive index of the optical waveguide and smaller than the refractive index of the lithium niobate film, thereby reducing reflection on a transmission path of light from the main transmission optical waveguide to the lithium niobate film.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
FIG. 2 is a top view of a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
FIG. 4 is a bottom view of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
FIG. 5 is a top view of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
FIG. 6 is a bottom view of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
fig. 7 is a flowchart of a method for fabricating a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
fig. 8 to 12 are schematic structural diagrams illustrating a process for manufacturing a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
fig. 13 to fig. 15 are schematic structural diagrams of a process for manufacturing a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An embodiment of the present invention provides a three-dimensional optical waveguide modulation structure, referring to fig. 1 and 2, including:
a substrate 100;
optical waveguides in the substrate 100, the optical waveguides including a main transmission optical waveguide 201, a transition optical waveguide and an edge optical waveguide, the transition optical waveguide connecting the main transmission optical waveguide 201 and the edge optical waveguide, the main transmission optical waveguide 201 and the edge optical waveguide having different depths in the substrate 100;
a coupling waveguide located on one side surface of the substrate 100, the coupling waveguide being disposed opposite to the main transmission optical waveguide 201, and a distance from the coupling waveguide to the main transmission optical waveguide 201 being smaller than a distance from the coupling waveguide to the edge optical waveguide;
a lithium niobate film 400 on a side of the coupling waveguide facing away from the substrate 100.
The refractive index of the coupling waveguide is larger than that of the optical waveguide and smaller than that of the lithium niobate film 400, and therefore reflection on the transmission path of light from the main transmission optical waveguide 201 to the lithium niobate film 400 is reduced.
The effective refractive index of the substrate 100 is close to that of the fiber core in the optical fiber, so that the coupling efficiency of the optical fiber and the optical waveguide in the substrate 100 is improved.
In one embodiment, the material of the substrate 100 comprises glass.
In other embodiments, the material of the substrate comprises a polymer having an effective index of refraction that is similar to the effective index of refraction of the core of the optical fiber.
In one embodiment, the vertical distance between the top surface of the primary transmission optical waveguide 201 to the surface of the substrate 100 on the side facing the coupling waveguide is 200nm-500nm, for example 300 nm; if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing to the coupling waveguide side is less than 200nm, the main transmission optical waveguide may be damaged in the thinning process when the substrate is thinned; if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing to the coupling waveguide side is greater than 500nm, the coupling length from the main transmission optical waveguide to the coupling waveguide is too long, which is not beneficial to photoelectric integration, and the formed three-dimensional optical waveguide modulation structure is too large in size.
The edge optical waveguides include a first edge optical waveguide 202 and a second edge optical waveguide 203; the transition optical waveguides include a first transition optical waveguide 204 and a second transition optical waveguide 205, the first transition optical waveguide 204 connects the main transmission optical waveguide 201 and the first edge optical waveguide 202, and the second transition optical waveguide 205 connects the main transmission optical waveguide 201 and the second edge optical waveguide 203.
The edge optical waveguide is used for coupling with an external optical fiber, and the transition optical waveguide is used for connecting the edge optical waveguide and the main transmission optical waveguide 201, so that the optical waveguides are continuous; the continuity of the optical waveguide reduces the rate of light loss during transmission through the optical waveguide. Since the distance from the coupling waveguide to the main transmission optical waveguide 201 is smaller than the distance from the coupling waveguide to the edge optical waveguide, the coupling efficiency is high and the coupling loss is reduced. The coupling waveguide is arranged opposite to the main transmission optical waveguide 201, and the coupling waveguide does not need to be aligned with the edge optical waveguide, so that the coupling efficiency of the coupling waveguide and the optical waveguide is improved.
Referring to fig. 1, the coupling waveguide includes a first coupling waveguide 301 and a second coupling waveguide 302 arranged in a stack; the three-dimensional optical waveguide modulation structure further comprises: a cladding film 303 positioned between the first coupling waveguide 301 and the second coupling waveguide 302, the cladding film 303 having a refractive index that is less than the refractive index of the first coupling waveguide 301 and the refractive index of the second coupling waveguide 302. The first coupling waveguide 301 and the second coupling waveguide 302 can improve coupling efficiency and maximize mode field overlap integral.
In one embodiment, the first coupling waveguide 301 has a thickness of 200nm to 300nm, such as 260 nm; if the thickness of the first coupling waveguide is smaller than 200nm, the area of an optical mode supported by the first coupling waveguide is increased, the evanescent coupling condition formed by the main transmission waveguide and the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the first coupling waveguide is greater than 300nm, most of the light is limited in the optical waveguide, so that the area of an optical mode supported by the first coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of the light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
In one embodiment, the second coupling waveguide 302 has a thickness of 200nm to 300nm, such as 260 nm; if the thickness of the second coupling waveguide is smaller than 200nm, the area of an optical mode supported by the second coupling waveguide is increased, the evanescent coupling condition formed by the main transmission waveguide and the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the second coupling waveguide is larger than 300nm, most of light is limited in the optical waveguide, so that the area of an optical mode supported by the second coupling waveguide is reduced, the evanescent coupling condition formed by the main transmission optical waveguide and the coupling waveguide is not the optimal evanescent coupling condition, the energy of the light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
In one embodiment, the thickness of the cladding film 303 is 400nm to 500nm, such as 460 nm; if the thickness of the cladding film 303 is less than 400nm, the optical mode area of light in the first coupling waveguide and the second coupling waveguide is reduced, the evanescent coupling condition formed by the main transmission light waveguide and the coupling waveguide is not the optimal evanescent coupling condition, and the optical power coupled to the first coupling waveguide and the second coupling waveguide is reduced; if the thickness of the cladding film 303 is greater than 500nm, the optical mode area of light in the first coupling waveguide and the second coupling waveguide increases, and the evanescent coupling condition formed between the main transmission light waveguide and the coupling waveguide is not the optimal evanescent coupling condition.
In this embodiment, the material of the first coupling waveguide 301 is the same as the material of the second coupling waveguide 302. The material of the first coupling waveguide 301 comprises silicon nitride and the material of the second coupling waveguide 302 comprises silicon nitride. In other embodiments, the material of the first coupling waveguide 301 and the material of the second coupling waveguide 302 may be different. In other embodiments, the first coupling waveguide and the second coupling waveguide may also be other materials.
In one embodiment, the first coupling waveguide 301 and the second coupling waveguide 302 have the same thickness, which is beneficial for achieving uniform distribution of mode field.
In one embodiment, the material of the cladding film 303 includes silicon dioxide; in other embodiments, the material of the cladding film 303 may also include other materials.
The three-dimensional optical waveguide modulation structure further comprises: a first supporting layer 304 and a second supporting layer 305, wherein the first supporting layer 304 is positioned on the surface of the substrate 100 at the side of the first coupling waveguide 301 and covers the side wall of the first coupling waveguide 301 and the side wall of the cladding film 303, and the second supporting layer 305 surrounds the side wall of the second coupling waveguide 302 and covers the first supporting layer 304.
In one embodiment, the material of the first support layer 304 includes silicon dioxide; in other embodiments, the material of the first support layer may also comprise other materials.
In one embodiment, the material of the second support layer 305 comprises silicon dioxide; in other embodiments, the material of the second support layer may also comprise other materials.
The top surface of the first supporting layer 304 is designed to be at a uniform height with respect to the top surface of the cladding film 303, providing a relatively flat surface for the process of forming the second coupling waveguide 302.
The top surface of the first support layer 304 is used to be at the same height as the top surface of the second coupling waveguide 302, so as to provide a relatively flat surface for the process of forming the lithium niobate film, and the formed lithium niobate film has good appearance and quality.
In one embodiment, the lithium niobate film 400 has a thickness of 580nm to 620nm, such as 600 nm.
The lithium niobate film 400 has a high-frequency characteristic, a refractive index linearly changes with voltage, and optical loss is small.
In one embodiment, the thermal expansion coefficients of the optical waveguide and the coupling waveguide are matched with the thermal expansion coefficient of the lithium niobate film 400, so that no thermal damage exists in the preparation process, light can be coupled into the lithium niobate film from an optical fiber through the optical waveguide more conveniently, and the stability of a three-dimensional optical waveguide modulation structure is improved.
The three-dimensional optical waveguide modulation structure further comprises: and the modulation electrode 600 is positioned on the surface of one side, facing away from the main transmission optical waveguide 201, of the lithium niobate film 400.
The modulation electrode 600 includes a first electrode 601 (refer to fig. 2) and a second electrode 602 (refer to fig. 2), and projections of the first electrode 601 and the second electrode 602 are respectively located at two sides of the main transmission optical waveguide 201.
In one embodiment, the three-dimensional optical waveguide modulation structure comprises a glass-based modulation device, and a glass-based through hole is added on one side, facing the substrate, of the modulation electrode, so that the integrity of signals is improved.
In one embodiment, the three-dimensional optical waveguide modulation structure may further comprise glass-based inertial navigation.
Fig. 3 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention.
The three-dimensional optical waveguide modulation structure provided in this embodiment is different from the three-dimensional optical waveguide modulation structure provided in the previous embodiment in that: referring to fig. 3, the coupling waveguide 31 is a single-layer structure; the lithium niobate film 400 is in contact with a surface of the coupling waveguide 31 on a side facing away from the substrate.
In one embodiment, the coupling waveguide 31 has a thickness of 200nm to 300nm, such as 260 nm; if the thickness of the coupling waveguide is less than 200nm, the area of an optical mode supported by the coupling waveguide is increased, the evanescent coupling condition formed by the main transmission optical waveguide and the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the coupling waveguide is larger than 300nm, most of light can be limited in the optical waveguide, so that the area of an optical mode supported by the coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of the light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
The refractive index of the coupling waveguide 31 is larger than the refractive index of the optical waveguide and smaller than the refractive index of the lithium niobate film 400, and the refractive index of the coupling waveguide 31 is larger than the refractive index of the optical waveguide and smaller than the refractive index of the lithium niobate film 400, thereby reducing reflection on a transmission path of light from the main transmission optical waveguide to the lithium niobate film.
In one embodiment, the material of the coupling waveguide 31 comprises silicon nitride; in other embodiments, the coupling waveguide 31 may also be other materials.
The three-dimensional optical waveguide modulation structure further comprises: a support layer 32 around the coupling waveguide 31, wherein the support layer 32 is located on the surface of the substrate 100 at the side of the coupling waveguide 31 and covers the sidewall of the coupling waveguide 31.
In one embodiment, the material of the support layer 32 includes silicon dioxide; in other embodiments, the support layer may also comprise other materials.
The three-dimensional optical waveguide modulation structure provided by the embodiment can also meet the requirements of applications such as modulation and phase shift.
The same contents of this embodiment as those of the previous embodiment will not be described in detail.
The three-dimensional optical waveguide modulation structure provided by another embodiment of the present invention is different from the three-dimensional optical waveguide modulation structure provided by the previous embodiment in that: the optical waveguide in the substrate 100 is an arrayed waveguide grating structure, and one optical waveguide in the previous embodiment is replaced by a plurality of optical waveguides, so that the lithium niobate film 400 performs multi-path parallel modulation.
The differences between this embodiment and the previous embodiment will not be described in detail.
Fig. 4 and 5 are schematic diagrams of three-dimensional optical waveguide modulation structures according to another embodiment of the present invention.
The three-dimensional optical waveguide modulation structure provided in this embodiment is different from the three-dimensional optical waveguide modulation structure provided in the previous embodiment in that: referring to fig. 4, the optical waveguide in the substrate 100 is an optical splitter structure.
Referring to fig. 5, the modulation electrodes on the surface of the lithium niobate film 400 opposite to the substrate 100 include a first electrode 601, a second electrode 602, a third electrode 603, a fourth electrode 604, and a fifth electrode 605, so that the lithium niobate film 400 is subjected to multi-channel parallel modulation.
The differences between this embodiment and the previous embodiment will not be described in detail.
Fig. 6 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention.
The three-dimensional optical waveguide modulation structure provided in this embodiment is different from the three-dimensional optical waveguide modulation structure provided in the previous embodiment in that: referring to fig. 6, the optical waveguide in the substrate 100 is a directional coupler structure.
The top view of this embodiment refers to fig. 5.
The differences between this embodiment and the previous embodiment will not be described in detail.
The embodiment also provides a method for manufacturing a three-dimensional optical waveguide modulation structure, and referring to fig. 7, the method includes the following steps:
s1, providing a substrate 100;
s2, forming an optical waveguide inside the substrate 100, the step of forming the optical waveguide including: forming a main transmission optical waveguide 201; forming a transition optical waveguide; forming an edge optical waveguide, wherein the transition optical waveguide connects the main transmission optical waveguide 201 and the edge optical waveguide, and the main transmission optical waveguide 201 and the edge optical waveguide have different depths in the substrate;
s3, forming a coupling waveguide on one side surface of the substrate, wherein the coupling waveguide is arranged opposite to the main transmission optical waveguide 201, and the distance from the coupling waveguide to the main transmission optical waveguide 201 is smaller than the distance from the coupling waveguide to the edge optical waveguide;
and S4, forming a lithium niobate film 400 on the side, opposite to the substrate, of the coupling waveguide.
This is described in detail below with reference to fig. 8 to 12.
Referring to fig. 8, a substrate 100 is provided.
The effective refractive index of the substrate is close to the fiber core of the optical fiber, which improves the coupling efficiency of the optical fiber and the optical waveguide in the substrate 100.
In one embodiment, the material of the substrate 100 comprises glass.
In other embodiments, the material of the substrate comprises a polymer having an effective index of refraction similar to that of the optical fiber.
With continued reference to fig. 8, optical waveguides are formed inside the substrate 100, and the optical waveguides include a main transmission optical waveguide 201, a transition optical waveguide and an edge optical waveguide, the transition optical waveguide connects the main transmission optical waveguide 201 and the edge optical waveguide, and the main transmission optical waveguide 201 and the edge optical waveguide have different depths in the substrate 100.
After forming an optical waveguide inside the substrate 100, the surface of the substrate 100 is thinned.
In one embodiment, the vertical distance between the top surface of the primary transmission optical waveguide 201 to the surface of the substrate 100 on the side facing the coupling waveguide is 200nm-500nm, for example 300 nm; if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing to the coupling waveguide side is less than 200nm, the main transmission optical waveguide may be damaged in the thinning process when the substrate is thinned; if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing to the coupling waveguide side is greater than 500nm, the coupling length from the main transmission optical waveguide to the coupling waveguide is too long, which is not beneficial to photoelectric integration, and the formed three-dimensional optical waveguide modulation structure is too large in size.
The step of forming the edge optical waveguide includes forming a first edge optical waveguide 202 and a second edge optical waveguide 203; the step of forming the transition optical waveguide comprises: a first transition optical waveguide 204 and a second transition optical waveguide 205 are formed, the first transition optical waveguide 204 connects the main transmission optical waveguide 201 and the first edge optical waveguide connection 202, and the second transition optical waveguide 205 connects the main transmission optical waveguide 201 and the second edge optical waveguide 203.
The continuity of the optical waveguide reduces the loss rate of light during transmission of the optical waveguide.
The edge optical waveguide is used for coupling with an external optical fiber, and the transition optical waveguide is used for connecting the edge optical waveguide and the main transmission optical waveguide 201, so that the optical waveguides are continuous; the continuity of the optical waveguide reduces the rate of light loss during transmission through the optical waveguide. Since the distance from the coupling waveguide to the main transmission optical waveguide 201 is smaller than the distance from the coupling waveguide to the edge optical waveguide, the coupling efficiency is high and the coupling loss is reduced. The coupling waveguide is arranged opposite to the main transmission optical waveguide 201, and the coupling waveguide does not need to be aligned with the edge optical waveguide, so that the coupling efficiency of the coupling waveguide and the optical waveguide is improved.
The process for forming the optical waveguide is a femtosecond laser pulse process. The femtosecond laser pulse has ultrahigh peak power and ultrashort pulse width, so that the femtosecond laser pulse has the characteristics of low damage threshold, low thermal effect and high processing precision when interacting with a material, and can directly write a three-dimensional microstructure in the transparent material, such as optical functional devices such as an optical waveguide, a three-dimensional microchannel, a micro-grating and a photonic crystal and the like in the transparent material.
The parameters of the femtosecond laser pulse process comprise: the wavelength is 1020nm-1030nm, the repetition frequency is 490kHz-510kHz, the average power is 100mW-1200mW, the scanning speed is 50um/s-2000um/s, and the scanning times are 1-20.
Referring to fig. 9, a coupling waveguide is formed on one side surface of the substrate 100, and a distance from the coupling waveguide to the main transmission optical waveguide 201 is smaller than a distance from the coupling waveguide to the edge optical waveguide.
The step of forming the coupling waveguide comprises: forming a first coupling waveguide 301 on one side surface of the substrate 100; a second coupling waveguide 302 is formed on a side of the first coupling waveguide 301 facing away from the substrate 100.
In one embodiment, the material of the first coupling waveguide is the same as the material of the second coupling waveguide; in other embodiments, the material of the first coupling waveguide and the material of the second coupling waveguide may be different.
In one embodiment, the first coupling waveguide 301 and the second coupling waveguide 302 have the same thickness, which is beneficial for achieving uniform distribution of mode field.
The first coupling waveguide 301 and the second coupling waveguide 302 can improve coupling efficiency and maximize mode field overlap integral.
Specifically, an initial first coupling waveguide is formed on one side of the substrate 100, and after the initial first coupling waveguide is formed, a part of the initial first coupling waveguide is removed, so that the initial first coupling waveguide forms the first coupling waveguide 301, and a projection of the first coupling waveguide 301 on the substrate 100 coincides with a projection of the main transmission optical waveguide 201 on the substrate 100.
In one embodiment, the process of forming the first coupling waveguide 301 includes a chemical vapor deposition and etching process.
In one embodiment, the material of the first coupling waveguide 301 comprises silicon nitride; in other embodiments, the material of the first coupling waveguide 301 may also comprise other materials.
After the first coupling waveguide 301 is formed, a second coupling waveguide 302 is formed on a side of the first coupling waveguide 301 facing away from the substrate 100, and the second coupling waveguide 302 is stacked on the first coupling waveguide 301.
In one embodiment, the process of forming the second coupling waveguide 302 includes a chemical vapor deposition and etching process.
In one embodiment, the material of the second coupling waveguide 302 comprises silicon nitride; in other embodiments, the material of the second coupling waveguide 301 may also comprise other materials.
In one embodiment, the first coupling waveguide 301 has a thickness of 200nm to 300nm, such as 260 nm; if the thickness of the first coupling waveguide is smaller than 200nm, the area of an optical mode supported by the first coupling waveguide is increased, the evanescent coupling condition formed by the main transmission waveguide and the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the first coupling waveguide is greater than 300nm, most of the light is limited in the optical waveguide, so that the area of an optical mode supported by the first coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of the light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
In one embodiment, the second coupling waveguide 302 has a thickness of 200nm to 300nm, such as 260 nm; if the thickness of the second coupling waveguide is smaller than 200nm, the area of an optical mode supported by the second coupling waveguide is increased, the evanescent coupling condition formed by the main transmission waveguide and the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the second coupling waveguide is larger than 300nm, most of light is limited in the optical waveguide, so that the area of an optical mode supported by the second coupling waveguide is reduced, the evanescent coupling condition formed by the main transmission optical waveguide and the coupling waveguide is not the optimal evanescent coupling condition, the energy of the light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
The method of making the modulator structure further comprises: before forming the second coupling waveguide 302, after forming the first coupling waveguide 301, a cladding film 303 is formed on a surface of the first coupling waveguide 301 facing away from the substrate 100, and a refractive index of the cladding film 303 is smaller than a refractive index of the first coupling waveguide 301 and a refractive index of the second coupling waveguide 302.
In one embodiment, the thickness of the cladding film 303 is 400nm to 500nm, such as 460 nm; if the thickness of the cladding film 303 is less than 400nm, the optical mode area of light in the first coupling waveguide and the second coupling waveguide is reduced, the evanescent coupling condition formed by the main transmission light waveguide and the coupling waveguide is not the optimal evanescent coupling condition, and the optical power coupled to the first coupling waveguide and the second coupling waveguide is reduced; if the thickness of the cladding film 303 is greater than 500nm, the optical mode area of light in the first coupling waveguide and the second coupling waveguide increases, and the evanescent coupling condition formed between the main transmission light waveguide and the coupling waveguide is not the optimal evanescent coupling condition.
In one embodiment, the material of the cladding film 303 includes silicon dioxide; in other embodiments, the material of the cladding film 303 may also include other materials.
A first supporting layer 304 is formed simultaneously with the formation of the cladding film 303, and the first supporting layer 304 is located on the surface of the substrate 100 at the side of the first coupling waveguide 301 and covers the side wall of the first coupling waveguide 301 and the side wall of the cladding film 303.
In one embodiment, the material of the first support layer 304 includes silicon dioxide; in other embodiments, the material of the first support layer may also comprise other materials.
After the second coupling waveguides 302 are formed, a second support layer 305 is formed, the second support layer 305 surrounding sidewalls of the second coupling waveguides 302 and covering the first support layer 304.
In one embodiment, the material of the second support layer 305 comprises silicon dioxide; in other embodiments, the material of the second support layer may also comprise other materials.
Referring to fig. 10 and 11 in combination, after the second support layer 305 is formed, a lithium niobate film 400 is formed on a side of the coupled waveguide facing away from the substrate 100.
The refractive index of the coupling waveguide is greater than the refractive index of the optical waveguide and less than the refractive index of the lithium niobate film 400, thus reducing reflection on the transmission path of light from the main transmission optical waveguide to the lithium niobate film.
Specifically, the step of forming the lithium niobate film 400 includes: providing a temporary substrate 500, forming a lithium niobate film 400 on the temporary substrate 500, then bonding the lithium niobate film 400 to the second coupling waveguide 302, and removing the temporary substrate 500 after bonding the lithium niobate film 400 to the coupling waveguide.
In one embodiment, the lithium niobate film 400 has a thickness of 580nm to 620nm, such as 600 nm.
Referring to fig. 12, after the lithium niobate film 400 is formed, a modulation electrode 600 is formed on a surface of the lithium niobate film 400 on a side opposite to the substrate 100.
The modulation electrode 600 includes a first electrode 601 and a second electrode 602, and projections of the first electrode 601 and the second electrode 602 are respectively located on two sides of the main transmission optical waveguide 201.
The embodiment also provides another method for manufacturing a three-dimensional optical waveguide modulation structure, and specifically refers to fig. 13 to fig. 15.
Fig. 13 is a schematic diagram based on fig. 8.
In one embodiment, the coupling waveguide 31 is a single layer structure; the lithium niobate film 400 is in contact with the coupling waveguide 31.
The specific steps for forming the coupling waveguide 31 are as follows: referring to fig. 13, an initial coupling waveguide is formed on one side of the substrate 100, and after the initial coupling waveguide is formed, a portion of the initial coupling waveguide is removed, so that the initial coupling waveguide forms the coupling waveguide 31, and a projection of the coupling waveguide 31 on the substrate 100 coincides with a projection of the main transmission optical waveguide 201 on the substrate 100.
In one embodiment, the process of forming the coupling waveguide 31 includes a chemical vapor deposition and etching process.
In one embodiment, the material of the coupling waveguide 31 comprises silicon nitride; in other embodiments, the material of the coupling waveguide 301 may also comprise other materials.
With continued reference to fig. 13, after the coupling waveguide 31 is formed, a support layer 32 is formed, the support layer 32 being located on the surface of the substrate 100 at the side of the coupling waveguide 31 and covering the sidewalls of the coupling waveguide 31.
In one embodiment, the material of the support layer 32 includes silicon dioxide; in other embodiments, the support structure may also comprise other materials.
After the support layer 32 is formed, a lithium niobate film 400 is formed on a side of the coupled waveguide facing away from the substrate 100.
The refractive index of the coupling waveguide is greater than the refractive index of the optical waveguide and less than the refractive index of the lithium niobate film 400, thus reducing reflection on the transmission path of light from the main transmission optical waveguide to the lithium niobate film.
Specifically, the step of forming the lithium niobate film 400 includes: referring to fig. 14, a temporary substrate 500 is provided, a lithium niobate film 400 is formed on the temporary substrate 500, and then the lithium niobate film 400 is bonded to the coupling waveguide 31, and after the lithium niobate film 400 is bonded to the coupling waveguide 31, the temporary substrate 500 is removed.
In one embodiment, the lithium niobate film 400 has a thickness of 580nm to 620nm, such as 600 nm.
Referring to fig. 15, after the lithium niobate film 400 is formed, a modulation electrode 600 is formed on a surface of the lithium niobate film 400 on a side opposite to the substrate 100.
The modulation electrode 600 includes a first electrode 601 and a second electrode 602, and projections of the first electrode 601 and the second electrode 602 are respectively located on two sides of the main transmission optical waveguide 201.
The same parts of this embodiment as those of the previous embodiment will not be described in detail.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (14)

1. A three-dimensional optical waveguide modulation structure, comprising:
a substrate;
the optical waveguide is positioned in the substrate and comprises a main transmission optical waveguide, a transition optical waveguide and an edge optical waveguide, wherein the transition optical waveguide is connected with the main transmission optical waveguide and the edge optical waveguide, and the main transmission optical waveguide and the edge optical waveguide have different depths in the substrate;
the coupling waveguide is positioned on the surface of one side of the substrate, the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide;
and the lithium niobate film is positioned on one side of the coupling waveguide, which faces away from the substrate.
2. The three-dimensional optical waveguide modulation structure according to claim 1 wherein the vertical distance between the top surface of the main transmission optical waveguide to the surface of the substrate on the side facing the coupling waveguide is 200nm-500 nm.
3. The three-dimensional optical waveguide modulation structure according to claim 1, wherein the refractive index of the coupling waveguide is larger than the refractive index of the optical waveguide and smaller than the refractive index of the lithium niobate film.
4. The three-dimensional optical waveguide modulation structure according to claim 1 wherein the edge optical waveguide comprises a first edge optical waveguide and a second edge optical waveguide;
the transition optical waveguide comprises a first transition optical waveguide and a second transition optical waveguide, the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide.
5. The three-dimensional optical waveguide modulation structure according to claim 1 wherein the coupling waveguide comprises a first coupling waveguide and a second coupling waveguide arranged in a stack;
the three-dimensional optical waveguide modulation structure further comprises: a cladding film positioned between the first coupling waveguide and the second coupling waveguide, the cladding film having a refractive index that is less than the refractive index of the first coupling waveguide and the refractive index of the second coupling waveguide;
preferably, the thickness of the first coupling waveguide is 200nm-300 nm;
preferably, the thickness of the second coupling waveguide is 200nm-300 nm;
preferably, the thickness of the cladding film is 400nm to 500 nm;
preferably, the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
6. The three-dimensional optical waveguide modulation structure according to claim 1 wherein the coupling waveguide is a single layer structure; the lithium niobate film is in contact with the surface of one side, back to the substrate, of the coupling waveguide; preferably, the thickness of the coupling waveguide is 200nm-300 nm.
7. The three-dimensional optical waveguide modulation structure according to claim 1 further comprising: and the modulation electrode is positioned on the surface of one side, back to the main transmission optical waveguide, of the lithium niobate film.
8. A method for preparing a three-dimensional optical waveguide modulation structure is characterized by comprising the following steps:
providing a substrate;
forming an optical waveguide within the substrate, the step of forming the optical waveguide comprising: forming a main transmission optical waveguide; forming a transition optical waveguide; forming an edge optical waveguide, wherein the transition optical waveguide is connected with the main transmission optical waveguide and the edge optical waveguide, and the main transmission optical waveguide and the edge optical waveguide have different depths in the substrate;
forming a coupling waveguide on one side surface of the substrate, wherein the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than that from the coupling waveguide to the edge optical waveguide;
and forming a lithium niobate film on one side of the coupling waveguide, which faces away from the substrate.
9. The method of claim 8, wherein a vertical distance between a top surface of the main transmission optical waveguide and a surface of the substrate on a side facing the coupling waveguide is 200nm to 500 nm.
10. The method for manufacturing a three-dimensional optical waveguide modulation structure according to claim 8, wherein the process of forming the optical waveguide is a femtosecond laser pulse process;
preferably, the parameters of the femtosecond laser pulse process include: the wavelength is 1020nm-1030nm, the repetition frequency is 490kHz-510kHz, the average power is 100mW-1200mW, the scanning speed is 50um/s-2000um/s, and the scanning times are 1-20.
11. The method of fabricating a three-dimensional optical waveguide modulation structure according to claim 8, wherein the step of forming the edge optical waveguide comprises: forming a first edge optical waveguide and a second edge optical waveguide; the step of forming the transition optical waveguide comprises: and forming a first transition optical waveguide and a second transition optical waveguide, wherein the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide.
12. The method of claim 8, wherein the step of forming the coupling waveguide comprises: forming a first coupling waveguide on one side surface of the substrate; forming a second coupling waveguide on a side of the first coupling waveguide facing away from the substrate;
the method of making the modulator structure further comprises: before forming the second coupling waveguide, forming a cladding film on a side surface of the first coupling waveguide opposite to the substrate, wherein the refractive index of the cladding film is smaller than that of the first coupling waveguide and that of the second coupling waveguide;
preferably, the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
13. The method of claim 8, wherein the coupling waveguide is a single layer structure;
the steps of forming the coupling waveguide are: and forming an initial coupling waveguide on the surface of the substrate, and removing part of the initial coupling waveguide to enable the initial coupling waveguide to form a coupling waveguide.
14. The method of making a three-dimensional optical waveguide modulation structure according to claim 8, further comprising: and forming a modulation electrode on one side of the lithium niobate film, which is back to the main transmission optical waveguide.
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Publication number Priority date Publication date Assignee Title
CN1963577A (en) * 2005-11-10 2007-05-16 日本碍子株式会社 Optical waveguide devices
CN101165583A (en) * 2006-10-20 2008-04-23 富士通株式会社 Optical modulator and transmitter
US20110305412A1 (en) * 2010-06-10 2011-12-15 Fujitsu Optical Components Limited Optical waveguide, optical modulator and optical coupler
CN110716327A (en) * 2019-10-21 2020-01-21 浙江大学 Silicon electro-optical modulator based on ITO directional coupler
CN211506095U (en) * 2020-03-13 2020-09-15 天津领芯科技发展有限公司 Lithium niobate thin film electro-optical modulator
CN113419364A (en) * 2021-05-27 2021-09-21 香港理工大学深圳研究院 Groove auxiliary type acousto-optic modulator based on lithium niobate film

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1963577A (en) * 2005-11-10 2007-05-16 日本碍子株式会社 Optical waveguide devices
CN101165583A (en) * 2006-10-20 2008-04-23 富士通株式会社 Optical modulator and transmitter
US20110305412A1 (en) * 2010-06-10 2011-12-15 Fujitsu Optical Components Limited Optical waveguide, optical modulator and optical coupler
CN110716327A (en) * 2019-10-21 2020-01-21 浙江大学 Silicon electro-optical modulator based on ITO directional coupler
CN211506095U (en) * 2020-03-13 2020-09-15 天津领芯科技发展有限公司 Lithium niobate thin film electro-optical modulator
CN113419364A (en) * 2021-05-27 2021-09-21 香港理工大学深圳研究院 Groove auxiliary type acousto-optic modulator based on lithium niobate film

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