CN114114533B - Three-dimensional optical waveguide modulation structure and preparation method thereof - Google Patents
Three-dimensional optical waveguide modulation structure and preparation method thereof Download PDFInfo
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- CN114114533B CN114114533B CN202111443769.7A CN202111443769A CN114114533B CN 114114533 B CN114114533 B CN 114114533B CN 202111443769 A CN202111443769 A CN 202111443769A CN 114114533 B CN114114533 B CN 114114533B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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Abstract
The invention provides a three-dimensional optical waveguide modulation structure and a preparation method thereof, wherein the three-dimensional optical waveguide modulation structure comprises the following components: a substrate; an optical waveguide in the substrate, the optical waveguide comprising a main transmission optical waveguide, a transition optical waveguide and an edge optical waveguide, the transition optical waveguide connecting the main transmission optical waveguide and the edge optical waveguide, the main transmission optical waveguide and the edge optical waveguide having different depths in the substrate; the coupling waveguide is positioned on one side surface of the substrate, the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide; and the lithium niobate film is positioned on one side of the coupling waveguide, which is opposite to the substrate. The three-dimensional optical waveguide modulation structure reduces the loss rate of light in the optical waveguide transmission process.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a three-dimensional optical waveguide modulation structure and a preparation method thereof.
Background
The modulator is used as a core device in the optical interconnection technology and is applied to a plurality of fields such as a coherent optical fiber communication system, an optical fiber cable television system, an optical sensing system, a wireless communication system, other optical fiber simulation systems and the like, however, the loss rate of light in the optical waveguide transmission process in the modulator structure in the prior art is high.
Accordingly, existing modulator structures are in need of improvement.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the problem of high loss rate of light in the optical waveguide transmission process in the modulator structure in the prior art.
In order to solve the above technical problems, the present invention provides a three-dimensional optical waveguide modulation structure, including: a substrate; an optical waveguide in the substrate, the optical waveguide comprising a main transmission optical waveguide, a transition optical waveguide and an edge optical waveguide, the transition optical waveguide connecting the main transmission optical waveguide and the edge optical waveguide, the main transmission optical waveguide and the edge optical waveguide having different depths in the substrate; the coupling waveguide is positioned on one side surface of the substrate, the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide; and the lithium niobate film is positioned on one side of the coupling waveguide, which is opposite to the substrate.
Optionally, a vertical distance between a top surface of the main transmission optical waveguide and a surface of the substrate facing the coupling waveguide side is 200nm-500nm.
Optionally, the refractive index of the coupling waveguide is greater than the refractive index of the optical waveguide and less than the refractive index of the lithium niobate film.
Optionally, the edge optical waveguide includes a first edge optical waveguide and a second edge optical waveguide; the transition optical waveguide comprises a first transition optical waveguide and a second transition optical waveguide, the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide.
Optionally, the coupling waveguide includes a first coupling waveguide and a second coupling waveguide that are stacked; the three-dimensional optical waveguide modulation structure further includes: and a cladding film positioned between the first coupling waveguide and the second coupling waveguide, wherein the refractive index of the cladding film is smaller than the refractive index of the first coupling waveguide and the refractive index of the second coupling waveguide.
Optionally, the thickness of the first coupling waveguide is 200nm-300nm.
Optionally, the thickness of the second coupling waveguide is 200nm-300nm.
Optionally, the thickness of the cladding film is 400nm-500nm.
Optionally, the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
Optionally, the coupling waveguide has a single-layer structure; and the lithium niobate film is contacted with the surface of the coupling waveguide on the side facing away from the substrate.
Optionally, the coupling waveguide has a thickness of 200nm-300nm.
Optionally, the method further comprises: and the modulation electrode is positioned on the surface of one side of the lithium niobate film, which is away from the main transmission optical waveguide.
The invention also provides a preparation method of the three-dimensional optical waveguide modulation structure, which is characterized by comprising the following steps: providing a substrate; forming an optical waveguide inside the substrate, the step of forming the optical waveguide comprising: forming a main transmission optical waveguide; forming a transition optical waveguide; forming an edge optical waveguide, wherein the transition optical waveguide connects the main transmission optical waveguide and the edge optical waveguide, and the depths of the main transmission optical waveguide and the edge optical waveguide in the substrate are different; forming a coupling waveguide on one side surface of the substrate, wherein the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide; and forming a lithium niobate film on the side of the coupling waveguide, which is away from the substrate.
Optionally, a vertical distance between a top surface of the main transmission optical waveguide and a surface of the substrate facing the coupling waveguide side is 200nm-500nm.
Optionally, the process of forming the optical waveguide is a femtosecond laser pulse process.
Optionally, the parameters of the femtosecond laser pulse process include: the wavelength is 1020nm-1030nm, the repetition frequency is 490kHz-510kHz, the average power is 100mW-1200mW, the scanning speed is 50um/s-2000um/s, and the scanning times are 1-20.
Optionally, the step of forming the edge optical waveguide includes: forming a first edge optical waveguide and a second edge optical waveguide; the step of forming the transition optical waveguide includes: and forming a first transition optical waveguide and a second transition optical waveguide, wherein the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide.
Optionally, the step of forming the coupling waveguide includes: forming a first coupling waveguide on one side surface of the substrate; forming a second coupling waveguide on one side of the first coupling waveguide, which is opposite to the substrate; the preparation method of the modulation structure further comprises the following steps: before the second coupling waveguide is formed, a cladding film is formed on the surface of the side, facing away from the substrate, of the first coupling waveguide, and the refractive index of the cladding film is smaller than that of the first coupling waveguide and that of the second coupling waveguide.
Optionally, the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
Optionally, the coupling waveguide has a single-layer structure; the step of forming the coupling waveguide is: and forming an initial coupling waveguide on the surface of the substrate, and removing part of the initial coupling waveguide to form the coupling waveguide by the initial coupling waveguide.
Optionally, the method further comprises: and forming a modulation electrode on one side of the lithium niobate film, which is opposite to the main transmission optical waveguide.
The technical scheme of the invention has the following advantages:
the invention provides a three-dimensional optical waveguide modulation structure, which comprises a main transmission optical waveguide, a transition optical waveguide and an edge optical waveguide, wherein the transition optical waveguide is connected with the main transmission optical waveguide and the edge optical waveguide, the depths of the main transmission optical waveguide and the edge optical waveguide in a substrate are different, light in the main transmission optical waveguide is coupled into a lithium niobate film through a coupling waveguide, the edge optical waveguide is used for being coupled with an external optical fiber, and the transition optical waveguide is used for connecting the edge optical waveguide and the main transmission optical waveguide, so that the optical waveguides are continuous; the continuity of the optical waveguide reduces the loss rate of light in the optical waveguide transmission process; since the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide, the coupling efficiency is high and the coupling loss is reduced. The coupling waveguide is arranged opposite to the main transmission optical waveguide, and the coupling waveguide is not required to be aligned with the edge optical waveguide, so that the coupling efficiency of the coupling waveguide and the optical waveguide is improved.
Further, the refractive index of the coupling waveguide is larger than that of the optical waveguide and smaller than that of the lithium niobate film, thereby reducing reflection on a transmission path of light from the main transmission optical waveguide to the lithium niobate film.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
FIG. 2 is a top view of a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
FIG. 4 is a bottom view of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
FIG. 5 is a top view of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
FIG. 6 is a bottom view of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention;
FIG. 7 is a flowchart of a method for fabricating a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
fig. 8 to 12 are schematic structural diagrams illustrating a process for manufacturing a three-dimensional optical waveguide modulation structure according to an embodiment of the present invention;
fig. 13 to 15 are schematic structural diagrams illustrating a process for manufacturing a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
An embodiment of the present invention provides a three-dimensional optical waveguide modulation structure, referring to fig. 1 and 2, including:
a substrate 100;
an optical waveguide in the substrate 100, the optical waveguide including a main transmission optical waveguide 201, a transition optical waveguide, and an edge optical waveguide, the transition optical waveguide connecting the main transmission optical waveguide 201 and the edge optical waveguide, the main transmission optical waveguide 201 and the edge optical waveguide having different depths in the substrate 100;
a coupling waveguide located on one side surface of the substrate 100, the coupling waveguide being disposed opposite to the main transmission optical waveguide 201, and a distance between the coupling waveguide and the main transmission optical waveguide 201 being smaller than a distance between the coupling waveguide and the edge optical waveguide;
a lithium niobate film 400 on the side of the coupling waveguide facing away from the substrate 100.
The refractive index of the coupling waveguide is greater than that of the optical waveguide and less than that of the lithium niobate film 400, thus reducing reflection on the transmission path of light from the main transmission optical waveguide 201 to the lithium niobate film 400.
The effective refractive index of the substrate 100 is similar to the effective refractive index of the core in the optical fiber, and the coupling efficiency of the optical fiber and the optical waveguide in the substrate 100 is improved.
In one embodiment, the material of the substrate 100 comprises glass.
In other embodiments, the material of the substrate comprises a polymer having an effective refractive index that is similar to the effective refractive index of the core in the optical fiber.
In one embodiment, the vertical distance between the top surface of the main transmission optical waveguide 201 and the surface of the substrate 100 facing the coupling waveguide is 200nm-500nm, for example 300nm, if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing the coupling waveguide is less than 200nm, the main transmission optical waveguide may be damaged during the thinning process when the substrate is thinned, and if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing the coupling waveguide is greater than 500nm, the coupling length of the main transmission optical waveguide to the coupling waveguide is too long, which is unfavorable for optoelectronic integration and the size of the formed three-dimensional optical waveguide modulation structure is too large.
The edge optical waveguides include a first edge optical waveguide 202 and a second edge optical waveguide 203; the transition optical waveguides include a first transition optical waveguide 204 and a second transition optical waveguide 205, the first transition optical waveguide 204 is connected to the main transmission optical waveguide 201 and the first edge optical waveguide 202, and the second transition optical waveguide 205 is connected to the main transmission optical waveguide 201 and the second edge optical waveguide 203.
The edge optical waveguide is used for coupling with an external optical fiber, and the transition optical waveguide is used for connecting the edge optical waveguide and the main transmission optical waveguide 201 so that the optical waveguides are continuous; the continuity of the optical waveguide reduces the loss rate of light during optical waveguide transmission. Since the distance from the coupling waveguide to the main transmission optical waveguide 201 is smaller than the distance from the coupling waveguide to the edge optical waveguide, the coupling efficiency is high and the coupling loss is reduced. The coupling waveguide is disposed opposite to the main transmission optical waveguide 201, and alignment of the coupling waveguide and the edge optical waveguide is not required, so that coupling efficiency of the coupling waveguide and the optical waveguide is improved.
Referring to fig. 1, the coupling waveguide includes a first coupling waveguide 301 and a second coupling waveguide 302 which are stacked; the three-dimensional optical waveguide modulation structure further includes: and a cladding film 303 positioned between the first coupling waveguide 301 and the second coupling waveguide 302, wherein the refractive index of the cladding film 303 is smaller than the refractive index of the first coupling waveguide 301 and the refractive index of the second coupling waveguide 302. The first coupling waveguide 301 and the second coupling waveguide 302 can improve coupling efficiency, and maximize mode field overlap integration.
In one embodiment, the thickness of the first coupling waveguide 301 is 200nm-300nm, such as 260nm; if the thickness of the first coupling waveguide is smaller than 200nm, the area of an optical mode supported by the first coupling waveguide is increased, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the first coupling waveguide is greater than 300nm, light is mostly confined in the optical waveguide, so that the area of an optical mode supported by the first coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
In one embodiment, the thickness of the second coupling waveguide 302 is 200nm-300nm, such as 260nm; if the thickness of the second coupling waveguide is smaller than 200nm, the area of the optical mode supported by the second coupling waveguide is increased, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the second coupling waveguide is greater than 300nm, the light will be mostly confined in the optical waveguide, so that the area of the optical mode supported by the second coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of the light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
In one embodiment, the cladding film 303 has a thickness of 400nm to 500nm, for example 460nm; if the thickness of the cladding film 303 is less than 400nm, the optical mode area of the light in the first coupling waveguide and the second coupling waveguide is reduced, and the evanescent coupling condition formed from the main transmission waveguide to the coupling waveguide is not the optimal evanescent coupling condition, so that the optical power of the light coupled to the first coupling waveguide and the second coupling waveguide is reduced; if the thickness of the cladding film 303 is greater than 500nm, the optical mode area of the light in the first coupling waveguide and the second coupling waveguide increases, and the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition.
In this embodiment, the material of the first coupling waveguide 301 is the same as the material of the second coupling waveguide 302. The material of the first coupling waveguide 301 comprises silicon nitride and the material of the second coupling waveguide 302 comprises silicon nitride. In other embodiments, the material of the first coupling waveguide 301 and the material of the second coupling waveguide 302 may be different. In other embodiments, the first coupling waveguide and the second coupling waveguide may also be other materials.
In one embodiment, the first coupling waveguide 301 and the second coupling waveguide 302 have the same thickness, which is advantageous for achieving a uniform distribution of the mode field.
In one embodiment, the material of the cladding film 303 comprises silicon dioxide; in other embodiments, the material of the cladding film 303 may also include other materials.
The three-dimensional optical waveguide modulation structure further includes: a first supporting layer 304 and a second supporting layer 305, wherein the first supporting layer 304 is located on the surface of the substrate 100 at the side of the first coupling waveguide 301 and covers the side wall of the first coupling waveguide 301 and the side wall of the cladding film 303, and the second supporting layer 305 surrounds the side wall of the second coupling waveguide 302 and covers the first supporting layer 304.
In one embodiment, the material of the first support layer 304 comprises silicon dioxide; in other embodiments, the material of the first support layer may also include other materials.
In one embodiment, the material of the second support layer 305 comprises silicon dioxide; in other embodiments, the material of the second support layer may also include other materials.
The top surface of the first supporting layer 304 is used to be at the same height as the top surface of the cladding film 303, so as to provide a relatively flat surface for the process of forming the second coupling waveguide 302.
The top surface of the first supporting layer 304 is used to be at the same height as the top surface of the second coupling waveguide 302, so that a relatively flat surface is provided for the process of forming the lithium niobate film, and the morphology and quality of the formed lithium niobate film are relatively good.
In one embodiment, the lithium niobate film 400 has a thickness of 580nm to 620nm, for example 600nm.
The lithium niobate film 400 has a high-frequency characteristic, and has a refractive index that changes linearly with voltage and a small optical loss.
In one embodiment, the optical waveguide and the coupling waveguide are matched with the thermal expansion coefficient of the lithium niobate film 400, so that thermal damage does not exist in the preparation process, the coupling of light from an optical fiber to the lithium niobate film through the optical waveguide is facilitated, and the stability of the three-dimensional optical waveguide modulation structure is improved.
The three-dimensional optical waveguide modulation structure further includes: and a modulating electrode 600, wherein the modulating electrode 600 is positioned on the surface of the lithium niobate film 400, which is opposite to the side of the main transmission optical waveguide 201.
The modulating electrode 600 includes a first electrode 601 (refer to fig. 2) and a second electrode 602 (refer to fig. 2), and projections of the first electrode 601 and the second electrode 602 are respectively located at two sides of the main transmission optical waveguide 201.
In one embodiment, the three-dimensional optical waveguide modulation structure comprises a glass-based modulation device, and a glass-based through hole is added on one side of a modulation electrode facing the substrate, so that the signal integrity is improved.
In one embodiment, the three-dimensional optical waveguide modulation structure may further include glass-based inertial navigation.
Fig. 3 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention.
The three-dimensional optical waveguide modulation structure provided by the present embodiment differs from the three-dimensional optical waveguide modulation structure provided by the previous embodiment in that: referring to fig. 3, the coupling waveguide 31 has a single-layer structure; the lithium niobate film 400 is in contact with the surface of the coupling waveguide 31 on the side facing away from the substrate.
In one embodiment, the coupling waveguide 31 has a thickness of 200nm-300nm, such as 260nm; if the thickness of the coupling waveguide is smaller than 200nm, the area of an optical mode supported by the coupling waveguide is increased, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the coupling waveguide is greater than 300nm, light is mostly confined in the optical waveguide, so that the area of an optical mode supported by the coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
The refractive index of the coupling waveguide 31 is greater than the refractive index of the optical waveguide and less than the refractive index of the lithium niobate film 400, and the refractive index of the coupling waveguide 31 is greater than the refractive index of the optical waveguide and less than the refractive index of the lithium niobate film 400, thus reducing reflection on a transmission path of light from the main transmission optical waveguide to the lithium niobate film.
In one embodiment, the material of the coupling waveguide 31 comprises silicon nitride; in other embodiments, the coupling waveguide 31 may also be other materials.
The three-dimensional optical waveguide modulation structure further includes: a support layer 32 around the coupling waveguide 31, the support layer 32 being located on the surface of the substrate 100 at the side of the coupling waveguide 31 and covering the side wall of the coupling waveguide 31.
In one embodiment, the material of the support layer 32 comprises silicon dioxide; in other embodiments, the support layer may also include other materials.
The three-dimensional optical waveguide modulation structure provided by the embodiment can also meet the requirements of modulation, phase shift and other applications.
The same contents as those of the previous embodiment are not described in detail.
The three-dimensional optical waveguide modulation structure provided by another embodiment of the present invention differs from the three-dimensional optical waveguide modulation structure provided by the previous embodiment in that: the optical waveguides in the substrate 100 are in an arrayed waveguide grating structure, and one optical waveguide in the previous embodiment is replaced by multiple optical waveguides, so that the lithium niobate film 400 performs multiple parallel modulation.
The differences between the present embodiment and the previous embodiment are not described in detail.
Fig. 4 and fig. 5 are schematic diagrams of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention.
The three-dimensional optical waveguide modulation structure provided by the present embodiment differs from the three-dimensional optical waveguide modulation structure provided by the previous embodiment in that: referring to fig. 4, the optical waveguide in the substrate 100 is a beam splitter structure.
Referring to fig. 5, the modulation electrodes of the side surface of the lithium niobate film 400 facing away from the substrate 100 include a first electrode 601, a second electrode 602, a third electrode 603, a fourth electrode 604, and a fifth electrode 605, so that the lithium niobate film 400 is multiplexed and modulated in parallel.
The differences between the present embodiment and the previous embodiment are not described in detail.
Fig. 6 is a schematic diagram of a three-dimensional optical waveguide modulation structure according to another embodiment of the present invention.
The three-dimensional optical waveguide modulation structure provided by the present embodiment differs from the three-dimensional optical waveguide modulation structure provided by the previous embodiment in that: referring to fig. 6, the optical waveguide in the substrate 100 is a directional coupler structure.
The top view of this embodiment is shown in fig. 5.
The differences between the present embodiment and the previous embodiment are not described in detail.
The embodiment also provides a method for preparing the three-dimensional optical waveguide modulation structure, referring to fig. 7, comprising the following steps:
s1, providing a substrate 100;
s2, forming an optical waveguide inside the substrate 100, wherein the step of forming the optical waveguide comprises the steps of: forming a main transmission optical waveguide 201; forming a transition optical waveguide; forming an edge optical waveguide, wherein the transition optical waveguide connects the main transmission optical waveguide 201 and the edge optical waveguide, and the depths of the main transmission optical waveguide 201 and the edge optical waveguide in the substrate are different;
s3, forming a coupling waveguide on one side surface of the substrate, wherein the coupling waveguide is arranged opposite to the main transmission optical waveguide 201, and the distance between the coupling waveguide and the main transmission optical waveguide 201 is smaller than that between the coupling waveguide and the edge optical waveguide;
and S4, forming a lithium niobate film 400 on the side of the coupling waveguide, which is opposite to the substrate.
The following describes in detail with reference to fig. 8 to 12.
Referring to fig. 8, a substrate 100 is provided.
The effective refractive index of the substrate is similar to the core of the optical fiber, improving the coupling efficiency of the optical fiber with the optical waveguide in the substrate 100.
In one embodiment, the material of the substrate 100 comprises glass.
In other embodiments, the material of the substrate comprises a polymer having an effective refractive index similar to that of the optical fiber.
With continued reference to fig. 8, an optical waveguide is formed inside the substrate 100, the optical waveguide including a main transmission optical waveguide 201, a transition optical waveguide, and an edge optical waveguide, the transition optical waveguide connecting the main transmission optical waveguide 201 and the edge optical waveguide, the main transmission optical waveguide 201 and the edge optical waveguide having different depths in the substrate 100.
After forming the optical waveguide inside the substrate 100, the surface of the substrate 100 is thinned.
In one embodiment, the vertical distance between the top surface of the main transmission optical waveguide 201 and the surface of the substrate 100 facing the coupling waveguide is 200nm-500nm, for example 300nm, if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing the coupling waveguide is less than 200nm, the main transmission optical waveguide may be damaged during the thinning process when the substrate is thinned, and if the vertical distance between the top surface of the main transmission optical waveguide and the surface of the substrate facing the coupling waveguide is greater than 500nm, the coupling length of the main transmission optical waveguide to the coupling waveguide is too long, which is unfavorable for optoelectronic integration and the size of the formed three-dimensional optical waveguide modulation structure is too large.
The step of forming the edge optical waveguide includes forming a first edge optical waveguide 202 and a second edge optical waveguide 203; the step of forming the transition optical waveguide includes: a first transition optical waveguide 204 and a second transition optical waveguide 205 are formed, the first transition optical waveguide 204 connects the main transmission optical waveguide 201 and the first edge optical waveguide 202, and the second transition optical waveguide 205 connects the main transmission optical waveguide 201 and the second edge optical waveguide 203.
The continuity of the optical waveguide reduces the loss rate of light during transmission of the optical waveguide.
The edge optical waveguide is used for coupling with an external optical fiber, and the transition optical waveguide is used for connecting the edge optical waveguide and the main transmission optical waveguide 201 so that the optical waveguides are continuous; the continuity of the optical waveguide reduces the loss rate of light during optical waveguide transmission. Since the distance from the coupling waveguide to the main transmission optical waveguide 201 is smaller than the distance from the coupling waveguide to the edge optical waveguide, the coupling efficiency is high and the coupling loss is reduced. The coupling waveguide is disposed opposite to the main transmission optical waveguide 201, and alignment of the coupling waveguide and the edge optical waveguide is not required, so that coupling efficiency of the coupling waveguide and the optical waveguide is improved.
The process of forming the optical waveguide is a femtosecond laser pulse process. The femtosecond laser pulse has the characteristics of ultra-high peak power and ultra-short pulse width, so that the femtosecond laser pulse has the characteristics of low damage threshold, low thermal effect and high processing precision when interacting with a material, and can directly write a three-dimensional microstructure in a transparent material, such as optical functional devices such as an optical waveguide, a three-dimensional microchannel, a micro-grating, a photonic crystal and the like, in the transparent material.
The parameters of the femtosecond laser pulse process include: the wavelength is 1020nm-1030nm, the repetition frequency is 490kHz-510kHz, the average power is 100mW-1200mW, the scanning speed is 50um/s-2000um/s, and the scanning times are 1-20.
Referring to fig. 9, a coupling waveguide is formed at one side surface of the substrate 100, and the distance from the coupling waveguide to the main transmission optical waveguide 201 is smaller than the distance from the coupling waveguide to the edge optical waveguide.
The step of forming the coupling waveguide includes: forming a first coupling waveguide 301 on one side surface of the substrate 100; a second coupling waveguide 302 is formed on the side of the first coupling waveguide 301 facing away from the substrate 100.
In one embodiment, the material of the first coupling waveguide is the same as the material of the second coupling waveguide; in other embodiments, the material of the first coupling waveguide may be different from the material of the second coupling waveguide.
In one embodiment, the first coupling waveguide 301 and the second coupling waveguide 302 have the same thickness, which is advantageous for achieving a uniform distribution of the mode field.
The first coupling waveguide 301 and the second coupling waveguide 302 can improve coupling efficiency, and can maximize mode field overlap integration.
Specifically, an initial first coupling waveguide is formed on one side of the substrate 100, after the initial first coupling waveguide is formed, a part of the initial first coupling waveguide is removed, so that the initial first coupling waveguide forms the first coupling waveguide 301, and the projection of the first coupling waveguide 301 on the substrate 100 coincides with the projection of the main transmission optical waveguide 201 on the substrate 100.
In one embodiment, the process of forming the first coupling waveguide 301 includes a chemical vapor deposition and etching process.
In one embodiment, the material of the first coupling waveguide 301 comprises silicon nitride; in other embodiments, the material of the first coupling waveguide 301 may also include other materials.
After the first coupling waveguide 301 is formed, a second coupling waveguide 302 is formed on a side of the first coupling waveguide 301 facing away from the substrate 100, and the second coupling waveguide 302 is stacked on the first coupling waveguide 301.
In one embodiment, the process of forming the second coupling waveguide 302 includes a chemical vapor deposition and etching process.
In one embodiment, the material of the second coupling waveguide 302 comprises silicon nitride; in other embodiments, the material of the second coupling waveguide 302 may also include other materials.
In one embodiment, the thickness of the first coupling waveguide 301 is 200nm-300nm, such as 260nm; if the thickness of the first coupling waveguide is smaller than 200nm, the area of an optical mode supported by the first coupling waveguide is increased, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the first coupling waveguide is greater than 300nm, light is mostly confined in the optical waveguide, so that the area of an optical mode supported by the first coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
In one embodiment, the thickness of the second coupling waveguide 302 is 200nm-300nm, such as 260nm; if the thickness of the second coupling waveguide is smaller than 200nm, the area of the optical mode supported by the second coupling waveguide is increased, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased; if the thickness of the second coupling waveguide is greater than 300nm, the light will be mostly confined in the optical waveguide, so that the area of the optical mode supported by the second coupling waveguide is reduced, the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition, the energy of the light coupled from the main transmission optical waveguide to the coupling waveguide is reduced, and the coupling length is increased.
The preparation method of the three-dimensional optical waveguide modulation structure further comprises the following steps: after the first coupling waveguide 301 is formed before the second coupling waveguide 302 is formed, a cladding film 303 is formed on a surface of the first coupling waveguide 301 facing away from the substrate 100, and a refractive index of the cladding film 303 is smaller than a refractive index of the first coupling waveguide 301 and a refractive index of the second coupling waveguide 302.
In one embodiment, the cladding film 303 has a thickness of 400nm to 500nm, for example 460nm; if the thickness of the cladding film 303 is less than 400nm, the optical mode area of the light in the first coupling waveguide and the second coupling waveguide is reduced, and the evanescent coupling condition formed from the main transmission waveguide to the coupling waveguide is not the optimal evanescent coupling condition, so that the optical power of the light coupled to the first coupling waveguide and the second coupling waveguide is reduced; if the thickness of the cladding film 303 is greater than 500nm, the optical mode area of the light in the first coupling waveguide and the second coupling waveguide increases, and the evanescent coupling condition formed from the main transmission optical waveguide to the coupling waveguide is not the optimal evanescent coupling condition.
In one embodiment, the material of the cladding film 303 comprises silicon dioxide; in other embodiments, the material of the cladding film 303 may also include other materials.
The cladding film 303 is formed simultaneously with the formation of the first support layer 304, and the first support layer 304 is located on the surface of the substrate 100 at the side of the first coupling waveguide 301 and covers the side wall of the first coupling waveguide 301 and the side wall of the cladding film 303.
In one embodiment, the material of the first support layer 304 comprises silicon dioxide; in other embodiments, the material of the first support layer may also include other materials.
After forming the second coupling waveguide 302, a second support layer 305 is formed, the second support layer 305 surrounding the sidewalls of the second coupling waveguide 302 and covering the first support layer 304.
In one embodiment, the material of the second support layer 305 comprises silicon dioxide; in other embodiments, the material of the second support layer may also include other materials.
Referring to fig. 10 and 11 in combination, after the second support layer 305 is formed, a lithium niobate film 400 is formed on the side of the coupling waveguide facing away from the substrate 100.
The refractive index of the coupling waveguide is greater than that of the optical waveguide and less than that of the lithium niobate film 400, thus reducing reflection on a transmission path of light from the main transmission optical waveguide to the lithium niobate film.
Specifically, the step of forming the lithium niobate film 400 includes: a temporary substrate 500 is provided, a lithium niobate film 400 is formed on the temporary substrate 500, the lithium niobate film 400 is bonded to the second coupling waveguide 302, and the temporary substrate 500 is removed after the lithium niobate film 400 is bonded to the coupling waveguide.
In one embodiment, the lithium niobate film 400 has a thickness of 580nm to 620nm, for example 600nm.
Referring to fig. 12, after the lithium niobate film 400 is formed, a modulation electrode 600 is formed on a surface of the lithium niobate film 400 facing away from the substrate 100.
The modulating electrode 600 includes a first electrode 601 and a second electrode 602, where the projections of the first electrode 601 and the second electrode 602 are located on two sides of the main transmission optical waveguide 201 respectively.
The embodiment also provides another preparation method of the three-dimensional optical waveguide modulation structure, and particularly refers to fig. 13 to 15.
Fig. 13 is a schematic view of the base of fig. 8.
In one embodiment, the coupling waveguide 31 has a single-layer structure; the lithium niobate film 400 is in contact with the coupling waveguide 31.
The specific steps of forming the coupling waveguide 31 are: referring to fig. 13, an initial coupling waveguide is formed on one side of the substrate 100, and after the initial coupling waveguide is formed, a portion of the initial coupling waveguide is removed, so that the initial coupling waveguide forms the coupling waveguide 31, and the projection of the coupling waveguide 31 on the substrate 100 coincides with the projection of the main transmission optical waveguide 201 on the substrate 100.
In one embodiment, the process of forming the coupling waveguide 31 includes chemical vapor deposition and etching processes.
In one embodiment, the material of the coupling waveguide 31 comprises silicon nitride; in other embodiments, the material of the coupling waveguide 301 may also include other materials.
With continued reference to fig. 13, after the coupling waveguide 31 is formed, a support layer 32 is formed, the support layer 32 being located on the surface of the substrate 100 at the side of the coupling waveguide 31 and covering the side walls of the coupling waveguide 31.
In one embodiment, the material of the support layer 32 comprises silicon dioxide; in other embodiments, the support structure may also include other materials.
After the support layer 32 is formed, a lithium niobate film 400 is formed on the side of the coupling waveguide facing away from the substrate 100.
The refractive index of the coupling waveguide is greater than that of the optical waveguide and less than that of the lithium niobate film 400, thus reducing reflection on a transmission path of light from the main transmission optical waveguide to the lithium niobate film.
Specifically, the step of forming the lithium niobate film 400 includes: referring to fig. 14, a temporary substrate 500 is provided, a lithium niobate film 400 is formed on the temporary substrate 500, and then the lithium niobate film 400 is bonded to the coupling waveguide 31, and after the lithium niobate film 400 is bonded to the coupling waveguide 31, the temporary substrate 500 is removed.
In one embodiment, the lithium niobate film 400 has a thickness of 580nm to 620nm, for example 600nm.
Referring to fig. 15, after the lithium niobate film 400 is formed, a modulation electrode 600 is formed on a surface of the lithium niobate film 400 facing away from the substrate 100.
The modulating electrode 600 includes a first electrode 601 and a second electrode 602, where the projections of the first electrode 601 and the second electrode 602 are located on two sides of the main transmission optical waveguide 201 respectively.
The same portions as those of the previous embodiment are not described in detail.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (19)
1. A three-dimensional optical waveguide modulation structure, comprising:
a substrate;
an optical waveguide in the substrate, the optical waveguide including a main transmission optical waveguide, a transition optical waveguide, and an edge optical waveguide, the transition optical waveguide connecting the main transmission optical waveguide and the edge optical waveguide, the main transmission optical waveguide and the edge optical waveguide having different depths in the substrate, the edge optical waveguide including a first edge optical waveguide and a second edge optical waveguide; the transition optical waveguide comprises a first transition optical waveguide and a second transition optical waveguide, the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide;
the coupling waveguide is positioned on one side surface of the substrate, the coupling waveguide is arranged opposite to the main transmission optical waveguide, the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide, and the coupling waveguide comprises a first coupling waveguide and a second coupling waveguide which are arranged in a stacked mode;
and the lithium niobate film is positioned on one side of the coupling waveguide, which is opposite to the substrate.
2. The three-dimensional optical waveguide modulation structure according to claim 1, wherein a vertical distance between a top surface of the main transmission optical waveguide to a surface of the substrate on a side facing the coupling waveguide is 200nm to 500nm.
3. The three-dimensional optical waveguide modulation structure according to claim 1, wherein a refractive index of the coupling waveguide is larger than a refractive index of the optical waveguide and smaller than a refractive index of the lithium niobate film.
4. The three-dimensional optical waveguide modulation structure according to claim 1, further comprising: and a cladding film positioned between the first coupling waveguide and the second coupling waveguide, wherein the refractive index of the cladding film is smaller than the refractive index of the first coupling waveguide and the refractive index of the second coupling waveguide.
5. The three-dimensional optical waveguide modulation structure according to claim 1, wherein the thickness of the first coupling waveguide is 200nm to 300nm.
6. The three-dimensional optical waveguide modulation structure according to claim 1, wherein the thickness of the second coupling waveguide is 200nm to 300nm.
7. The three-dimensional optical waveguide modulation structure according to claim 4, wherein the thickness of the cladding film is 400nm to 500nm.
8. The three-dimensional optical waveguide modulation structure according to claim 1, wherein the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
9. The three-dimensional optical waveguide modulation structure according to claim 1, wherein the coupling waveguide is a single-layer structure; and the lithium niobate film is contacted with the surface of the coupling waveguide on the side facing away from the substrate.
10. The three-dimensional optical waveguide modulation structure according to claim 1, wherein the coupling waveguide has a thickness of 200nm to 300nm.
11. The three-dimensional optical waveguide modulation structure according to claim 1, further comprising: and the modulation electrode is positioned on the surface of one side of the lithium niobate film, which is away from the main transmission optical waveguide.
12. The preparation method of the three-dimensional optical waveguide modulation structure is characterized by comprising the following steps of:
providing a substrate;
forming an optical waveguide inside the substrate, the step of forming the optical waveguide comprising: forming a main transmission optical waveguide; forming a transition optical waveguide; forming an edge optical waveguide, wherein the transition optical waveguide connects the main transmission optical waveguide and the edge optical waveguide, and the depths of the main transmission optical waveguide and the edge optical waveguide in the substrate are different; the step of forming the edge optical waveguide includes: forming a first edge optical waveguide and a second edge optical waveguide; the step of forming the transition optical waveguide includes: forming a first transition optical waveguide and a second transition optical waveguide, wherein the first transition optical waveguide is connected with the main transmission optical waveguide and the first edge optical waveguide, and the second transition optical waveguide is connected with the main transmission optical waveguide and the second edge optical waveguide;
forming a coupling waveguide on one side surface of the substrate, wherein the coupling waveguide is arranged opposite to the main transmission optical waveguide, and the distance from the coupling waveguide to the main transmission optical waveguide is smaller than the distance from the coupling waveguide to the edge optical waveguide; the step of forming the coupling waveguide includes: forming a first coupling waveguide on one side surface of the substrate; forming a second coupling waveguide on one side of the first coupling waveguide, which is opposite to the substrate;
and forming a lithium niobate film on the side of the coupling waveguide, which is away from the substrate.
13. The method of manufacturing a three-dimensional optical waveguide modulation structure according to claim 12, wherein a vertical distance between a top surface of the main transmission optical waveguide and a surface of the substrate on a side facing the coupling waveguide is 200nm to 500nm.
14. The method of fabricating a three-dimensional optical waveguide modulation structure according to claim 12, wherein the process of forming the optical waveguide is a femtosecond laser pulse process.
15. The method of fabricating a three-dimensional optical waveguide modulation structure according to claim 14, wherein the parameters of the femtosecond laser pulse process include: the wavelength is 1020nm-1030nm, the repetition frequency is 490kHz-510kHz, the average power is 100mW-1200mW, the scanning speed is 50um/s-2000um/s, and the scanning times are 1-20.
16. The method for manufacturing a three-dimensional optical waveguide modulation structure according to claim 12, wherein the method for manufacturing a modulation structure further comprises: before the second coupling waveguide is formed, a cladding film is formed on the surface of the side, facing away from the substrate, of the first coupling waveguide, and the refractive index of the cladding film is smaller than that of the first coupling waveguide and that of the second coupling waveguide.
17. The method of manufacturing a three-dimensional optical waveguide modulation structure according to claim 12, wherein the material of the first coupling waveguide is the same as the material of the second coupling waveguide.
18. The method for manufacturing a three-dimensional optical waveguide modulation structure according to claim 12, wherein the coupling waveguide has a single-layer structure;
the step of forming the coupling waveguide is: and forming an initial coupling waveguide on the surface of the substrate, and removing part of the initial coupling waveguide to form the coupling waveguide by the initial coupling waveguide.
19. The method of fabricating a three-dimensional optical waveguide modulation structure according to claim 12, further comprising: and forming a modulation electrode on one side of the lithium niobate film, which is opposite to the main transmission optical waveguide.
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| CN1963577A (en) * | 2005-11-10 | 2007-05-16 | 日本碍子株式会社 | Optical waveguide devices |
| CN101165583A (en) * | 2006-10-20 | 2008-04-23 | 富士通株式会社 | Optical modulator and transmitter |
| CN110716327A (en) * | 2019-10-21 | 2020-01-21 | 浙江大学 | Silicon electro-optical modulator based on ITO directional coupler |
| CN211506095U (en) * | 2020-03-13 | 2020-09-15 | 天津领芯科技发展有限公司 | Lithium niobate thin film electro-optical modulator |
| CN113419364A (en) * | 2021-05-27 | 2021-09-21 | 香港理工大学深圳研究院 | Groove auxiliary type acousto-optic modulator based on lithium niobate film |
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| JP5488226B2 (en) * | 2010-06-10 | 2014-05-14 | 富士通オプティカルコンポーネンツ株式会社 | Mach-Zehnder type optical modulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1963577A (en) * | 2005-11-10 | 2007-05-16 | 日本碍子株式会社 | Optical waveguide devices |
| CN101165583A (en) * | 2006-10-20 | 2008-04-23 | 富士通株式会社 | Optical modulator and transmitter |
| CN110716327A (en) * | 2019-10-21 | 2020-01-21 | 浙江大学 | Silicon electro-optical modulator based on ITO directional coupler |
| CN211506095U (en) * | 2020-03-13 | 2020-09-15 | 天津领芯科技发展有限公司 | Lithium niobate thin film electro-optical modulator |
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