CN114113226B - Method for determining existence of novel electronic surface state and application thereof - Google Patents
Method for determining existence of novel electronic surface state and application thereof Download PDFInfo
- Publication number
- CN114113226B CN114113226B CN202111341797.8A CN202111341797A CN114113226B CN 114113226 B CN114113226 B CN 114113226B CN 202111341797 A CN202111341797 A CN 202111341797A CN 114113226 B CN114113226 B CN 114113226B
- Authority
- CN
- China
- Prior art keywords
- original sample
- electronic surface
- sample
- novel electronic
- surface state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a method for determining the existence of a novel electronic surface state and application thereof, wherein the method for determining the existence of the novel electronic surface state comprises the following steps: testing the transport property and the magneto-resistance property of an original sample; injecting inert gas ions with the diameter not larger than that of argon into the original sample to obtain an injected sample, wherein the original sample contains metal elements; and testing the transport characteristic and the magnetic resistance characteristic of the injected sample, and judging that the original sample has a new and odd electronic surface state according to the fact that the transport characteristic presents a metal characteristic and the magnetic resistance characteristic has a peak under a small field in the test result. The invention creates a new testing method, the original sample can be tested without the conditions of low temperature environment and freedom of movement of the original sample, and the dependence degree of the test on professional testers is reduced while the testing cost is reduced.
Description
Technical Field
The invention relates to an electronic detection method, in particular to a method for determining the existence of a novel electronic surface state and application thereof.
Background
In recent years, researchers find that certain solid material interfaces exhibit a novel electronic behavior which does not exist in a bulk phase, the novel electron has the characteristic of resisting scattering obstruction caused by defects in the solid material, so that the solid material can still keep the conductive behavior unchanged under the action of the defects, and the electronic state of the novel electron in the local area of the surface of the solid material is called a novel electronic surface state. The solid material with the novel electronic surface state has the characteristics different from those of common solid materials, so that the solid material has higher application value in electronics and electronic devices. Therefore, how to confirm whether the novel electronic surface state exists on the solid material interface becomes a precondition and a key point of research related to the novel electronic surface state.
The traditional detection method of the novel electronic surface state mainly adopts photoelectron spectrum, and along with the application of the more convenient angle-resolved photoelectron spectrum (APPES for short) in the detection of the novel electronic surface state, the photoelectron spectrum is gradually replaced by the APPES in the detection of the novel electronic surface state.
However, due to the existence of the electronic surface states of the solid material, the detection of the novel electronic surface states of the solid material interface by the APPES device has high requirements on detection conditions: 1) the quality requirement on the film sample is extremely high, and the flatness of the surface of the solid material to be measured at least reaches the level of a picometer. 2) The APPES device is required to be in a low-temperature environment (for example, the testing temperature of the testing environment is reduced by being equipped with liquid helium) when the sample is measured, and the sample is required to be subjected to multi-degree-of-freedom angle adjustment during the detection process.
In order to meet the detection condition for detecting the surface state of the novel odd electron by adopting an APPES device: on the one hand, it is desirable to provide high quality samples; on the other hand, more auxiliary accessories for the APPES equipment need to be added to meet the requirements of the APPES equipment on low temperature and freedom of movement during detection, and the test precision is improved. Moreover, since the manufacturing cost of the APPES equipment is high, the operation requirement on detection personnel is high, and professional detection personnel is generally required to operate. The conditions for detecting the surface state of the novel electron by adopting the APPES equipment enable the detection cost of the surface state of the novel electron to be higher and the efficiency to be lower.
Disclosure of Invention
In order to solve the problems that the detection of the surface state of the novel electron needs to consume higher cost and the detection efficiency is lower, the inventor finds out in long-term research and experiments that: a general metal conductor material can have metal-insulator transition along with the increment or decrement of temperature, before a metal conductor is not transformed to an insulator, the metal conductor has metal characteristics, after the metal conductor is transformed to the insulator, the insulator has insulator characteristics, and after inert gas ions are injected into the metal conductor, the injected ions serve as defects in the metal conductor, so that the scattering of electrons in the metal conductor is enhanced, and the metal conductor has insulator characteristics; for the metal conductor with the novel electronic surface state, the defect formed by the injected inert gas ions in the metal conductor cannot influence the scattering of the novel electrons, so that the metal conductor always presents metal characteristics along with the change of temperature. Moreover, whether the metallic conductor material has an electronic surface state can be determined by detecting its magnetoresistive characteristics. The method comprises the steps of injecting inert gas ions into an original sample to obtain an injection sample, and determining whether the original sample has an electronic surface state and whether the original sample has a novel electronic surface state by adopting a testing method combining transport characteristics and magnetic resistance characteristics. Thus, according to one aspect of the present invention, a method of determining the presence of a novel electronic surface state is provided.
The method for determining the existence of the novel electronic surface state comprises the following steps:
testing the transport property and the magneto-resistance property of an original sample;
injecting inert gas ions with the diameter not larger than argon (Ar) into the original sample to obtain an injected sample, wherein the original sample contains metal elements;
the method comprises the steps of testing the transport characteristic and the magnetic resistance characteristic of an injected sample, judging whether a new odd electronic surface state exists in the original sample according to the fact that the transport characteristic presents a metal characteristic and the magnetic resistance characteristic in a test result (namely the test result of the transport characteristic and the magnetic resistance characteristic of the original sample and the test result of the transport characteristic and the magnetic resistance characteristic of the injected sample), and judging whether the new odd electronic surface state does not exist in the original sample according to at least one test result that the transport characteristic presents an insulator characteristic and the magnetic resistance characteristic does not present a peak in a small field.
The ions injected into the original sample are inert gas ions with the diameter not larger than Ar, so that on one hand, the damage of the original sample caused by the larger diameter of the injected ions can be avoided, on the other hand, the inert gas ions injected into the original sample are uncharged, and electrons or holes cannot be brought into the original sample, so that the novel electron surface state of the original sample is prevented from being influenced; therefore, the testing of the transport characteristics and the magnetic resistance characteristics of the original sample and the injected sample can be combined, whether the original sample has the novel electronic surface state or not can be determined, wherein when the original sample and the injected sample with the novel electronic surface state are used for testing the magnetic resistance characteristics, the testing result of the magnetic resistance characteristics shows that the original sample and the injected sample have the peak under a small field, which is generated due to the movement of carriers on the two-dimensional surface, and the original sample and the injected sample both have the electronic surface state.
The invention creates a method for determining the surface state of a novel electron without an APPES device, the test environment is not required to be performed in a low-temperature environment, the original sample is not required to be tested under the condition that the original sample has freedom of movement, the test cost is reduced, and the dependence degree of the test on professional testers is reduced.
In some embodiments, the original sample and the implanted sample are single crystal or epitaxial thin films. So as to ensure that the original sample and the injected sample have higher quality and ensure the accuracy of the test. Preferably, the flatness of the surfaces of the original sample and the injected sample is above the picometer scale. Thereby, the quality of the original sample and the injected sample can be further improved to further improve the accuracy of the test. Preferably, the surfaces of the original sample and the injected sample need to be kept contaminant free and free of impurities.
In some embodiments, the original sample has a strong spin orbit coupling effect. In an original sample with a strong spin orbit coupling effect, the interaction between the magnetic moment of electron spin and the magnetic moment generated by electron orbit motion is strong, so that novel electrons with the characteristics of being easy to be generally used electrons can be easily induced at the interface of the materials.
In some embodiments, the original sample is a complex oxide film. Illustratively, SrIrO is used3、NaOsO3、Sr2IrO4、Cd2Os2O7Or Nd2Ir2O7The prepared complex oxide film. Complex oxides are more susceptible to inducing new electrons at their interface due to complex interactions between charge, spin orbit, and spin degrees of freedom; furthermore, when the complex oxide film is externalDuring film delay, because the crystal structure of the complex oxide film is inevitably influenced by a growth substrate, the complex oxide film forms richer electronic surface states under the complex interaction among charges, spin orbitals and spin degrees of freedom, so that the operation is more complicated when the common test means such as APPES (atomic power system error) is adopted to test the novel electronic surface states of the complex oxide film, and when the method is adopted to determine the novel electronic surface states of the epitaxial complex oxide film, the method is not influenced by the rich electronic surface states of the epitaxial complex oxide film, namely when the test object is the epitaxial complex oxide film, the method has more prominent advantages.
In some embodiments, the inert gas ions are gaussian distributed along the thickness of the injected sample. To ensure efficient injection of the inert gas ions into the original sample.
In some embodiments, the implantation dose range of the inert gas ions is 8 × 1014A/cm2~3.5×1015A/cm2Wherein A is helium (He), neon (Ne) or argon (Ar). Therefore, the amorphous implantation sample caused by overlarge implantation dosage can be avoided while the inert gas ions can be effectively implanted into the original sample. Preferably, the inert gas ions are He ions. To minimize damage to the original sample by the implanted ions. Illustratively, the original sample is epitaxial SrIrO3A thin film, and the thickness thereof is less than or equal to 50 nm; the implantation energy of the inert gas ions is less than or equal to 5 keV.
In some embodiments, the angle of injection of the inert gas ions into the original sample is not coincident with the normal to the original sample. Therefore, the situation that inert gas ions injected into an original sample cause channel effect in the sample, the test results of the transport characteristics and the magnetic resistance characteristics of the injected sample are influenced, and whether a novel electronic surface state exists or not can not be judged through the combination of the transport characteristics and the magnetic resistance characteristics is avoided.
According to another aspect of the present invention, the foregoing method of determining a novel odd electronic surface state is used to determine whether an epitaxial oxide thin film with strong spin-orbit coupling has a novel electronic surface state.
Injecting inert gas ions with the diameter not larger than Ar into the epitaxial oxide film by adopting the method for determining the surface state of the novel electron; then, in conjunction with the testing of the transport and magneto-resistive properties of the injected sample, it can be determined whether the original sample has the presence of a novel electronic surface state. The determination of whether the original sample has a novel electronic surface state can be performed without the aid of an APPES device, which provides convenience for confirming whether the epitaxial oxide film with strong spin-orbit coupling has the novel electronic surface state.
Drawings
FIG. 1 is a schematic flow chart diagram illustrating a method for determining the presence of a novel electronic surface state according to one embodiment of the present invention;
FIG. 2 is a graph of the results of transport property testing of a raw sample and an injected sample;
FIG. 3 is a graph of the results of transport property testing of epitaxial films without novel electronic surface states;
fig. 4 is a graph of the results of the magnetoresistance characteristics of the original sample and the injection sample, wherein e in fig. 4 is a graph of the results of the magnetoresistance characteristics of the original sample, and f in fig. 4 is a graph of the results of the magnetoresistance characteristics of the injection sample;
FIG. 5 is a graph showing the results of a magnetoresistance test of an epitaxial film without a novel electronic surface state; wherein, g in fig. 5 is a graph of the result of the magnetoresistance characteristic test of the original sample, and h in fig. 5 is a graph of the result of the magnetoresistance characteristic test of the injected sample.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of additional identical elements in the process, method, article, or apparatus that comprises the element. The terms used herein are generally terms commonly used by those skilled in the art, and if they are inconsistent with such commonly used terms, the terms herein control.
In this context, the term "novel electrons" refers to electrons at the surface of a solid material having the property of being able to resist scattering inhibition by defects in the solid material, which electrons are able to keep the conductive behavior of the solid material unchanged by the effect of the defects in the solid material.
As used herein, the term "defect" refers to a crystal defect, and refers to a location where the internal structural integrity of the crystal is compromised, which includes mainly point defects, line defects, plane defects, and bulk defects.
In this context, the term "novel electronic surface state" refers to an electronic state in which the novel electrons are localized at the surface of the solid material. The novel electronic surface state belongs to one of the electronic surface states, but not all solid materials having an electronic surface state have the novel electronic surface state. The novel electronic surface states are mainly present in single crystal materials with strong spin-orbit coupling.
In this context, the term "electronic surface state" means that an atom on a solid surface has excess unbound electrons due to a cleavage of a chemical bond on one side of the atom. This unsaturated bonding force of atoms on the surface is called dangling bond. Such surface localized electronic states are called electronic surface states.
In this document, the term "spin-orbit coupling (SOC), also known as spin-orbit interaction, refers to the" fine "splitting at the orbital level caused by the interaction of the spin of the particle with the orbital momentum. Here, "strong spin-orbit coupling" means having a large spin-orbit coupling torque, and these materials are heavy metal materials such as Ir, Pt, Pd, Ta, W, Hf, CuBi, CuIr, and AuW.
In the present context, the term "photoelectron spectroscopy" refers to a technique for measuring the kinetic energy (and hence the binding energy) of photoelectrons ejected from a sample by monochromatic radiation using the principle of the photoelectric effect, the intensity of the photoelectrons and the angular distribution of these electrons, and using this information to study the electronic structure of atoms, molecules, condensed phases, and in particular solid surfaces.
In this context, the term "Angle-resolved photoelectron spectroscopy (ARPES)" refers to the study of the electronic structure of a solid by using the photoelectric effect, i.e. an electronic structure in which a sample surface is irradiated with a beam of light, and when the frequency of the incident light is higher than a specific threshold (work function), electrons near the surface are separated from the sample and become free electrons.
Herein, the term "metal-insulator transition" refers to a physical transition of a metal conductor to become a non-conductive insulator (or semiconductor) or a reverse thereof.
Herein, the term "metallic characteristic" refers to a characteristic that the resistance of a material decreases with decreasing temperature.
Herein, the term "insulator characteristic" refers to a characteristic in which the resistance of a material increases with a decrease in temperature.
As used herein, the term "transport properties" refers to the property of a material that changes in resistance with temperature.
As used herein, the term "magnetoresistive properties" refers to the property of a material that changes in resistance with a magnetic field.
As used herein, the term "small field" refers to a magnetic field having a magnetic induction in the range of-0.05T to + 0.05T.
As used herein, the term "carrier" refers to an electron loss resulting in a vacancy (hole guide) left on a covalent bond in semiconductor physics. There are two types of carriers in a semiconductor, namely, negatively charged free electrons and positively charged free holes.
In this context, the term "epitaxial thin film" refers to a thin film obtained by epitaxial growth, that is, a single crystal layer grown on a single crystal substrate with a certain requirement and having the same crystal orientation as the substrate.
In this context, the term "complex oxide" refers to an oxide composed of two or more oxides of the same element and containing at least one transition metal element, the complex oxide not being a mixture.
In this context, the term "channeling" refers to the phenomenon that ions are implanted into a solid, the solid is a crystal, when the ions are implanted along the main crystal axis direction of the crystal, they may collide with lattice atoms similarly (the collision parameters P are approximately equal), the collisions are related to each other, the movement deflection of the ions is small at each collision, the ions pass through the vicinity of the same row of atoms of the crystal lattice, and can penetrate into the solid for a deeper distance, and this phenomenon is called channeling.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
A method of determining the presence of a novel electronic surface state according to one embodiment of the present invention.
The method for determining the existence of the novel electronic surface state comprises the following steps:
testing the transport property and the magneto-resistance property of an original sample;
injecting inert gas ions with the diameter not larger than Ar into the original sample to obtain an injected sample, wherein the original sample contains metal elements;
the method comprises the steps of testing the transport characteristic and the magnetic resistance characteristic of an injected sample, judging whether a new odd electronic surface state exists in the original sample according to the fact that the transport characteristic presents a metal characteristic and the magnetic resistance characteristic in a test result (namely the test result of the transport characteristic and the magnetic resistance characteristic of the original sample and the test result of the transport characteristic and the magnetic resistance characteristic of the injected sample), and judging whether the new odd electronic surface state does not exist in the original sample according to at least one test result that the transport characteristic presents an insulator characteristic and the magnetic resistance characteristic does not present a peak in a small field.
In order to ensure the accuracy of the test, it is preferable that the injected sample has a high quality, including: injecting a sample single crystal or an epitaxial film; the flatness of the surface of the injected sample reaches more than picometer level; preferably, the surfaces of the original sample and the injected sample need to be kept contaminant free and free of impurities. Generally, in order to have a higher quality of the injected sample, the original sample must also have a higher quality.
In order to ensure that the inert gas ions are effectively injected into the original sample, the inert gas ions injected into the sample are preferably controlled to have a gaussian distribution along the thickness direction of the injected sample. Furthermore, in order to avoid that the inert gas ions injected into the original sample cause channeling effect therein, and influence the test results of the transport characteristics and the magnetic resistance characteristics of the injected sample, so that whether a novel electronic surface state exists cannot be judged through the combination of the transport characteristics and the magnetic resistance characteristics, the injection angle of the inert gas ions injected into the original sample is controlled not to coincide with the normal of the original sample. Furthermore, in order to ensure that the inert gas ions can be effectively implanted into the original sample and avoid amorphization of the implanted sample caused by too large implantation dose, the implantation dose range of the inert gas ions is controlled to be 8 × 1014A/cm2~3.5×1015A/cm2Wherein A is He, Ne or Ar.
Because the ions injected into the original sample adopt inert gas ions with the diameter not larger than Ar, the original sample is not damaged, electrons or holes are not brought into the original sample, the influence on the novel electronic surface state of the original sample is avoided, the testing of the transport property and the magnetic resistance property of the original sample and the injected sample is ensured, and whether the novel electronic surface state exists in the original sample or not can be determined. The invention creates a method for determining the surface state of a novel electron without APPES equipment, the testing environment is not required to be performed in a low-temperature environment, the original sample is not required to be tested under the condition that the original sample has freedom of movement, the testing cost is reduced, and the degree of dependence of the testing on professional testers is reduced.
Since there is a high probability that a material having a strong spin-orbit coupling effect has a novel electron surface state, a material having a strong spin-orbit coupling effect is generally selected as the original sample in order to make the use of the method more meaningful. Preferably, a complex oxide of a material with a strong spin-orbit coupling effect is chosen, such as SrIrO3、NaOsO3、Sr2IrO4、Cd2Os2O7Or Nd2Ir2O7This is because complex oxides are more prone to induce new electrons at their interface due to complex interactions between charge, spin orbit, and spin degrees of freedom; moreover, when the complex oxide thin film is an epitaxial thin film, the crystal structure of the complex oxide thin film is inevitably influenced by a growth substrate, so that the complex oxide thin film forms richer electronic surface states under the complex interaction among charges, spin orbitals and spin degrees of freedom, the operation is more complicated when the novel electronic surface states of the complex oxide thin film are tested by common testing means such as APPES, and the novel electronic surface states of the complex oxide thin film are determined by the method disclosed by the invention and are not influenced by the richer electronic surface states of the complex oxide thin film.
Preferably, the inert gas is an ion He to minimize damage to the original sample by the implanted ions. Illustratively, the starting sample is epitaxial SrIrO3A thin film, and the thickness thereof is less than or equal to 50 nm; the implantation energy of the inert gas ions is less than or equal to 5 keV.
Fig. 1 exemplarily shows one of the embodiments of the method of determining a novel electronic surface state, comprising the steps of:
s10: testing the transport property and the magneto-resistance property of an original sample;
s20: injecting inert gas ions with the diameter not larger than Ar into the original sample to obtain an injected sample, wherein the original sample contains metal elements;
s30: testing the transport characteristic and the magnetic resistance characteristic of the injected sample to obtain a test result, judging that the original sample has a new odd electronic surface state according to at least one test result of the transport characteristic presenting metal characteristic and the magnetic resistance characteristic having a peak under a small field, and judging that the original sample does not have the new odd electronic surface state according to at least one test result of the transport characteristic presenting insulator characteristic and the magnetic resistance characteristic having no peak under the small field.
In particular, to determine the epitaxy SrIrO3For example, whether a new electronic surface state exists in the (SIO) oxide thin film is described as an example, and a method for determining the new electronic surface state is described as follows:
example 1
The method comprises the steps of firstly, selecting an epitaxial SIO film with the thickness of 40nm as an original sample, and testing the transport property and the magneto-resistance property of the original sample;
second, the injection dose in the original sample was 2.5X 1015A/cm2Implanting He ions with the energy of 5keV to obtain an implanted sample;
and thirdly, testing the transport property and the magnetic resistance property of the injected sample.
As shown in fig. 2 and 4, it can be seen from fig. 2 that the transport characteristics of the original sample of the epitaxial SIO oxide thin film exhibit metal-insulator transition, and the transport characteristics of the injected sample exhibit metal characteristics; as can be seen from fig. 4, the magneto-resistive properties of the original sample and the implanted sample of the epitaxial SIO oxide film both show sharp peaks at small fields. The test results of fig. 2 and 4 show that the epitaxial SIO oxide film has a novel electronic surface state. Epitaxial LaNiO without novel electronic surface states according to FIG. 33The transport properties of the original sample of the film exhibit metal-insulator transition, and the transport properties of the injected sample exhibit insulator transition; FIG. 5 is an epitaxial LaNiO without novel electronic surface states3The magneto-resistive characteristics of the original sample and the injected sample of the film do not have peaks under a small field, and the fact that the material which does not have metal conversion and small field peaks simultaneously does not have a novel electronic surface state can also be proved.
Example 2
The difference between this embodiment and embodiment 1 is the first step and the second step, which specifically are:
in the first step, an epitaxial SIO film with the thickness of 50nm is selected as an original sample, and the transport property and the magneto-resistance property of the original sample are tested;
in the second step, the original sample was injected at a dose of 3.5X 1015A/cm2And implanting He ions with the energy of 5keV to obtain an implanted sample.
Example 3
The difference between this embodiment and embodiment 1 is the second step, which specifically is:
in the second step, the original sample was injected with a dose of 8X 1014A/cm2And implanting He ions with the energy of 5keV to obtain an implanted sample.
In either case, the epitaxial SIO films may be grown in the following manner:
growing epitaxial SIO film by Pulse Laser (PLD) method at temperature not higher than 640 deg.C and oxygen pressure not higher than 50mTorr, wherein the laser wavelength is 248nm (KrF), frequency is 4Hz, and energy is not higher than 1.6Jcm-2Bombarding the SIO target with the laser to deposit SIO atoms on the TiO layer2SrTiO in (001) direction as an end face3And (STO) preparing an epitaxial SIO film meeting the thickness requirement on the single crystal substrate.
Other methods of epitaxial film formation may be used, such as Molecular Beam Epitaxy (MBE) or other higher-end methods of epitaxial film formation, as long as high-quality epitaxial films can be formed.
According to another aspect of the present invention, the foregoing method of determining a novel odd electronic surface state is used to determine whether an epitaxial oxide thin film with strong spin-orbit coupling has a novel electronic surface state.
Injecting inert gas ions with the diameter not larger than Ar into the epitaxial oxide film by adopting the method for determining the surface state of the novel electron to obtain an injection sample; then, in combination with the testing of the transport and magneto-resistive properties of the injected sample, it can be determined whether the original sample has the presence of a novel electronic surface state. This application allows for the determination of whether the original sample has a novel electronic surface state without the aid of an APPES device, and facilitates the confirmation of whether a novel electronic surface state exists in an epitaxial oxide film with strong spin-orbit coupling.
What has been described above are merely some embodiments of the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the inventive concept thereof, and these changes and modifications can be made without departing from the spirit and scope of the invention.
Claims (11)
1. A method of determining the presence of a novel electronic surface state, comprising the steps of:
testing the transport property and the magneto-resistance property of an original sample;
injecting inert gas ions with the diameter not larger than Ar into the original sample to obtain an injected sample, wherein the original sample contains metal elements;
and testing the transport characteristic and the magnetic resistance characteristic of the injected sample, judging that the original sample has a new odd electronic surface state according to at least one test result of the transport characteristic presenting metal characteristic and the magnetic resistance characteristic presenting spike under a small field, and judging that the original sample does not have the new odd electronic surface state according to at least one test result of the transport characteristic presenting insulator characteristic and the magnetic resistance characteristic not presenting spike under the small field.
2. The method for determining the presence of novel electronic surface states as claimed in claim 1, wherein said original and implanted samples are single crystals or epitaxial thin films.
3. The method for determining the presence of novel electronic surface states as claimed in claim 2 wherein the original sample has a strong spin-orbit coupling effect.
4. The method of claim 3, wherein the original sample is SrIrO3、NaOsO3、Sr2IrO4、Cd2Os2O7Or Nd2Ir2O7The prepared complex oxide film.
5. The method for determining the presence of novel electronic surface states as claimed in any one of claims 1 to 4, wherein the injected sample has a Gaussian distribution of inert gas ions along the thickness of the injected sample.
6. The method of claim 5, wherein said inert gas ions are implanted in a dose range of 8 x 1014A/cm2~3.5×1015A/cm2Wherein A is He, Ne or Ar.
7. The method of determining the presence of novel electronic surface states as claimed in claim 6 wherein said noble gas ions are He ions.
8. The method of determining the presence of novel electronic surface states as claimed in claim 7, wherein said original sample is epitaxial SrIrO3A thin film, and the thickness thereof is less than or equal to 50 nm;
the implantation energy of the inert gas ions is less than or equal to 5 keV.
9. The method for novel electronic surface states existence according to claim 5, characterized in that the injection angle of the inert gas ions into the original sample is not coincident with the normal of the original sample.
10. The method for novel electronic surface states existence according to claim 8, characterized in that the injection angle of the inert gas ions into the original sample is not coincident with the normal of the original sample.
11. Use of a method according to any one of claims 1 to 10 for determining the presence of novel electronic surface states in epitaxial oxide films with strong spin-orbit coupling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111341797.8A CN114113226B (en) | 2021-11-12 | 2021-11-12 | Method for determining existence of novel electronic surface state and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111341797.8A CN114113226B (en) | 2021-11-12 | 2021-11-12 | Method for determining existence of novel electronic surface state and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114113226A CN114113226A (en) | 2022-03-01 |
| CN114113226B true CN114113226B (en) | 2022-07-19 |
Family
ID=80379209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111341797.8A Active CN114113226B (en) | 2021-11-12 | 2021-11-12 | Method for determining existence of novel electronic surface state and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114113226B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4949052A (en) * | 1988-03-15 | 1990-08-14 | Mitsubishi Electric Manufacturing Co., Ltd. | Clock signal generator having back-up oscillator substitution |
| CN206740683U (en) * | 2017-03-29 | 2017-12-12 | 兰州大学 | A kind of nano-controller original position magnetotransport measuring instrument |
| CN107703431A (en) * | 2017-09-11 | 2018-02-16 | 西安电子科技大学 | Device surface state trap measuring method based on changeable frequency pulse technique |
| CN107703430A (en) * | 2017-09-11 | 2018-02-16 | 西安电子科技大学 | The measuring method that surface state trap influences on device output characteristics |
| CN110470965A (en) * | 2019-07-09 | 2019-11-19 | 同济大学 | A kind of semiconductor surface state carrier lifetime test method |
-
2021
- 2021-11-12 CN CN202111341797.8A patent/CN114113226B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4949052A (en) * | 1988-03-15 | 1990-08-14 | Mitsubishi Electric Manufacturing Co., Ltd. | Clock signal generator having back-up oscillator substitution |
| CN206740683U (en) * | 2017-03-29 | 2017-12-12 | 兰州大学 | A kind of nano-controller original position magnetotransport measuring instrument |
| CN107703431A (en) * | 2017-09-11 | 2018-02-16 | 西安电子科技大学 | Device surface state trap measuring method based on changeable frequency pulse technique |
| CN107703430A (en) * | 2017-09-11 | 2018-02-16 | 西安电子科技大学 | The measuring method that surface state trap influences on device output characteristics |
| CN110470965A (en) * | 2019-07-09 | 2019-11-19 | 同济大学 | A kind of semiconductor surface state carrier lifetime test method |
Non-Patent Citations (1)
| Title |
|---|
| 宽带隙半导体SiC表面态研究;朱靖 等;<< 固体电子学研究与进展>>;20201231;第40卷(第6期);401-405页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114113226A (en) | 2022-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Horiba et al. | In vacuo photoemission study of atomically controlled La 1− x Sr x Mn O 3 thin films: Composition dependence of the electronic structure | |
| US6478931B1 (en) | Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom | |
| Passacantando et al. | Growth of ferromagnetic nanoparticles in a diluted magnetic semiconductor obtained by Mn+ implantation on Ge single crystals | |
| Liu et al. | Correlation between microstructure and magnetotransport in organic semiconductor spin-valve structures | |
| US20030054133A1 (en) | Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom | |
| Magnée et al. | Influence of low energy Ar‐sputtering on the electronic properties of InAs‐based quantum well structures | |
| CN114113226B (en) | Method for determining existence of novel electronic surface state and application thereof | |
| Gu et al. | Epitaxial growth and magnetoresistance of La1− xCaxMnO3− δ thin films on MgO (001) substrates | |
| Gupta et al. | Influence of ion implantation on the magnetic properties of thin FeCo films | |
| Petti et al. | Chemical and electronic properties of Fe/MgO/Ge heterostructures for spin electronics | |
| US20120058367A1 (en) | Spin injection source and manufacturing method thereof | |
| Hodgson et al. | ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon | |
| US7186658B2 (en) | Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma | |
| Eid et al. | Exchange biasing of the ferromagnetic semiconductor (Ga, Mn) As by MnO | |
| Shinozaki et al. | Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance | |
| Öcal et al. | Structural and morphological effect of Ti underlayer on Pt/Co/Pt magnetic ultra-thin film | |
| Lynn et al. | Interface studies using variable energy positron beams | |
| Mantovan et al. | Synthesis and characterization of Fe3Si/SiO2 structures for spintronics | |
| Dedkov et al. | Spin-resolved photoelectron spectroscopy of the MgO/Fe (110) system | |
| Shaw et al. | Structure, spin dynamics, and magnetic properties of annealed nanoscale Fe layers on GaAs | |
| RU2361320C1 (en) | Method of making ferromagnetic semiconductor material | |
| Cho et al. | Interlayer diffusion and specularity aspects of amorphous CoNbZr-based spin-valves | |
| Ni et al. | Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system | |
| Ghemes et al. | Optimization of Magnetic Tunnel Junction Structure through Component Analysis and Deposition Parameters Adjustment | |
| Kaidatzis | Spin-dependent hot electron transport and nanoscale magnetic imaging of metal/Si structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |