CN114099997A

CN114099997A - Filtration and purification treatment method

Info

Publication number: CN114099997A
Application number: CN202010894612.5A
Authority: CN
Inventors: 莫皓然; 黄启峰; 韩永隆; 蔡长谚; 李伟铭; 林宗义; 古旸
Original assignee: Microjet Technology Co Ltd
Current assignee: Microjet Technology Co Ltd
Priority date: 2020-08-31
Filing date: 2020-08-31
Publication date: 2022-03-01
Anticipated expiration: 2040-08-31
Also published as: CN114099997B

Abstract

A filtration purification treatment method comprises the following steps: 1) providing a filtering and purifying device; 2) carrying out diversion, air entraining, filtering and detection; 3) detecting and judging the purified gas; 4) circularly filtering and detecting the purified gas; 5) the purified gas is led out by multiple times of filtering purification.

Description

Filtration and purification treatment method

[ technical field ] A method for producing a semiconductor device

This application relates to a filtration and purification method, and more particularly to a filtration and purification method with enhanced gas intake effect and gas detection.

[ background of the invention ]

Modern people increasingly attach importance to the quality of gas around life, such as carbon monoxide, carbon dioxide, Volatile Organic Compounds (VOC), PM2.5, nitric oxide, sulfur monoxide, etc., and even particles contained in the gas, which are exposed to the environment and affect the health of human body, seriously and even endanger life. Therefore, the quality of the environmental gas is regarded as good and bad, and how to monitor and avoid the remote monitoring is a subject which needs to be regarded urgently at present.

In addition, in order to avoid harmful gas or particles from breathing, the nasal obstruction filter screen plugged into the nostril can provide purified inhaled gas, but the filter screen mesh of the nasal obstruction filter screen can cause the problems of insufficient breathing quantity and unsmooth breathing of a user, and the uncomfortable feeling of hanging the nasal obstruction filter screen by the user is derived.

Accordingly, the present invention is directed to a filtration and purification device that improves the above problems.

[ summary of the invention ]

The main purpose of the present disclosure is to provide a filtration and purification treatment method, which can be implemented by a filtration and purification device, wherein the guiding unit enhances the guiding of the gas transportation, and further provides high-pressure or large-flow gas output to the filter screen, so as to enhance the suction effect of the gas guiding, and can rapidly provide the filtered and purified suction gas through the filter screen, and the gas sensor also provides gas detection, so that the human body can breathe clean gas and know the gas quality of the suction gas.

One broad aspect of the present disclosure is a method for filtration and purification, comprising:

1) providing a filtering and purifying device, wherein the filtering and purifying device comprises a plurality of layers of filtering passages, each layer of filtering passages are formed by stacking structures, the filtering passages comprise a plurality of purifying chambers, a confluence chamber and a circulating channel, the purifying chambers are arranged in parallel, the bottoms of the purifying chambers are communicated with the confluence chamber, the circulating channel is communicated with the confluence chamber, each purifying chamber comprises at least one flow guide unit, at least one filtering unit, at least one gas sensor and an outlet valve, the circulating channel is provided with an inlet valve, the inlet valve is arranged between the confluence chamber and the circulating channel, the outlet valve is arranged between the purifying chambers and the confluence chamber, the outlet valve controls the communication or the sealing of the purifying chambers and the confluence chamber, and the inlet valve controls the communication or the sealing of the confluence chamber and the circulating channel;

2) guiding air, filtering and detecting, wherein the outlet valve of each purifying chamber of each layer of the filtering passage is opened, each guiding unit is driven to guide gas outside the filtering and purifying device into each purifying chamber, the filtering unit filters the introduced gas to form purified gas, and the purified gas is guided into the confluence chamber;

3) detecting and judging the purified gas, wherein the gas sensor of each purifying cavity of each filtering channel performs gas quality detection operation on the purified gas, and whether the gas quality of the purified gas reaches a respiration threshold value is judged;

4) circularly filtering and detecting the purified gas, and performing circulating filtration and detection when the purified gas of each layer of the filtering passages does not reach the breathing threshold, wherein the outlet valve of the purifying chamber where the gas sensor of each layer of the filtering passages is located is controlled to be closed, the outlet valve of each purifying chamber of the next layer of the filtering passages is closed, and meanwhile, the inlet valve of the circulating channel of the previous layer of the filtering passages is opened, so that the purified gas of the previous layer of the filtering passages can be returned to the previous layer of the filtering passages to perform circulating filtration, purification and re-detection; and

5) and filtering and purifying for multiple times to derive the purified gas, wherein the purified gas of the confluence chamber of the previous layer of the filtering passages enters the filtering unit of each purifying chamber of the next layer of the filtering passages to be filtered and purified for the second time, and when the purified gas of the next layer of the filtering passages reaches the respiration threshold, the outlet valve of the next layer of the filtering passages is opened and then introduced into the last layer of the filtering passages, and the purified gas is introduced into the last layer of the filtering passages to be filtered, purified and discharged for multiple times.

[ description of the drawings ]

Fig. 1 is a schematic view of an embodiment of the filtration and purification apparatus set.

Fig. 2A is a schematic diagram of a micro-electromechanical blower type pump of the filtering and purifying device.

Fig. 2B to 2C are schematic operation diagrams of the mems blower type pump of fig. 2A.

Fig. 3A is a schematic view of a micro-electromechanical pump of the filtering and purifying device.

Fig. 3B to fig. 3C are schematic operation diagrams of the mems pump of fig. 3A.

Fig. 4A to 4D are schematic views of the valve unit.

FIG. 5 is a flow chart of a filtration purification process.

FIG. 6 is a schematic view of a filtration purification process.

Fig. 7 is a schematic view of the filtration purification apparatus as a nasal tampon.

[ notation ] to show

10: filtering and purifying device

20: connecting piece

1: body

11L, 21L, 31L: decontamination chamber

12: air outlet end

12L, 22L, 32L: confluence chamber

13: air inlet end

13L, 23L, 33L: circulation chamber

14L, 24L, 34L: outlet valve

15L, 25L, 35L: inlet valve

3: flow guiding unit

3A: micro-electromechanical blast type pump

31A: air outlet base

311A: air outlet chamber

312A: compression chamber

313A: through hole

32A: first oxide layer

33A: jet resonance layer

331A: air inlet hole

332A: gas injection hole

333A: suspension section

34A: second oxide layer

341A: resonant cavity section

35A: resonant cavity layer

351A: resonant cavity

36A: first piezoelectric component

361A: a first lower electrode layer

362A: first piezoelectric layer

363A: a first insulating layer

364A: a first upper electrode layer

3B: MEMS pump

31B: air inlet base

311B: air intake

32B: third oxide layer

321B: confluence channel

322B: converging chamber

33B: resonant layer

331B: center hole

332B: vibrating section

333B: fixing segment

34B: a fourth oxide layer

341B: compression chamber segment

35B: vibration layer

351B: actuating section

352B: outer rim section

353B: air hole

36B: second piezoelectric element

361B: a second lower electrode layer

362B: second piezoelectric layer

363B: a second insulating layer

364B: second upper electrode layer

4: filter unit

5: gas sensor

6: valve unit

61: valve conductive layer

61A: through hole

62: valve base layer

62A: through hole

63: flexible film

63A: through hole

64: containing space

7: driving chip

8: battery with a battery cell

9: waterproof breathable film

L1: first layer of filter passages

L2: second layer of filter passages

L3: last layer of filtering passage

S1-S5: step (ii) of

[ detailed description ] embodiments

Embodiments that embody the features and advantages of this disclosure will be described in detail in the description that follows. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.

As shown in fig. 1, the present application provides a filtration and purification treatment method implemented by a filtration and purification apparatus 10, the filtration and purification apparatus 10 comprising: a body 1, at least one layer of filter passage. The body 1 has an air outlet end 12 and an air inlet end 13. The filtering passages of the present embodiment are exemplified by three layers, namely, a first-layer filtering passage L1, a second-layer filtering passage L2 and a last-layer filtering passage L3, but the number of layers is not limited thereto, and may be changed arbitrarily according to actual situations. The first-stage filtration path L1, the second-stage filtration path L2, and the last-stage filtration path L3 are similar in structure, and the first-stage filtration path L1 will be described as an example. The first-layer filtering passage L1 is disposed in the body 1, and includes a plurality of purification chambers 11L, a confluence chamber 12L, and a circulation passage 13L disposed in parallel. The bottoms of the plurality of purge chambers 11L communicate with the confluence chamber 12L, and a circulation passage 13L is provided at one side thereof to communicate with the confluence chamber 12L. Each of the purification chambers 11L includes at least one flow guide unit 3, at least one filter unit 4, at least one gas sensor 5, and an outlet valve 14L, and the circulation channel 13L has an inlet valve 15L for controlling the communication or the sealing between the confluence chamber 12L and the circulation channel 13L by opening or closing the inlet valve 15L, and for controlling the communication or the sealing between the purification chambers 11L and the confluence chamber 12L by opening or closing the outlet valve 14L.

In another embodiment, the filter unit is a herbal protective anti-sensitive filter screen formed by coating the high-efficiency filter screen with a herbal protective coating layer for extracting ginkgo biloba and japanese rhus chinensis, which is effective in resisting and destroying influenza virus surface proteins passing through the filter screen.

When the diversion unit 3 in the purification chamber 11L is driven, the air outside the main body 1 enters the purification chamber 11L of the first-layer filtering passage L1 in the main body 1 from the air inlet 13, the filtering unit 4 in the purification chamber 11L filters and purifies the air entering the purification chamber 11L, the purified air is introduced into the confluence chamber 12L by the action of the diversion unit 3, the gas sensor 5 in the purification chamber 11L performs a gas quality detection operation on the purified air, determines whether the gas quality of the purified air reaches a respiration threshold, and controls whether the inlet valve 15L of the circulation passage 13L is opened or not based on the respiration threshold as a determination standard. When the gas quality of the purified gas does not reach the respiration threshold, the inlet valve 15L of the circulation channel 13L is opened, so that the gas can be returned to the first layer of filtering passage L1 for circulation filtering, purifying and re-detecting, and when the purified gas reaches the respiration threshold, the purified gas can be discharged from the gas outlet end 12. The respiration threshold of the present embodiment can be, but is not limited to, a harmful gas concentration or an aerosol concentration.

With continued reference to fig. 1, the filtering paths may include a first filtering path L1 and a second filtering path L2, the first filtering path L1 and the second filtering path L2 being formed by stacking each other in a semiconductor process. The flow guide unit 3 of the purification chamber 21L of the second-layer filtering passage L2 is disposed adjacent to one side of the air inlet 13, the filtering unit 4 and the gas sensor 5 are sequentially disposed below the flow guide unit 3, and the outlet valve 14L is disposed below the gas sensor 5 and disposed adjacent to the air outlet 12, wherein the flow guide unit 3 drives the actuating actuator to guide the gas into the purification chamber 21L, the gas is filtered and purified by the filtering unit 4, the purified gas is detected by the gas sensor 5 to determine whether the gas quality of the purified gas reaches a respiration threshold, and then the purified gas is discharged to the collecting chamber 22L of the second-layer filtering passage L2 through the outlet valve 24L. When the gas sensor 5 of the purification chamber 21L of the second-layer filtering passage L2 detects that the purified gas does not reach the respiration threshold, the inlet valve 25L of the circulation passage 23L is opened, so that the gas can be returned to the second-layer filtering passage L2 for re-detection of the circulating filtering purification; when the purified gas reaches the respiration threshold, the purified gas can be discharged from the gas outlet end 12.

When the purge gas detected by the gas sensor 5 in the purge chamber 11L of the first-layer filter passage L1 does not reach the respiration threshold, the outlet valve 14L of the purge chamber 11L in which the gas sensor 5 in the first-layer filter passage L1 is located is closed and not opened for communication, so that the purge gas that does not reach the respiration threshold is not introduced into the confluence chamber 12L, the outlet valves 24L of all the purge chambers 21L of the second-layer filter passage L2 are closed, and the inlet valve 15L of the circulation channel 13L of the first-layer filter passage L1 is opened, so that the purge gas in the first-layer filter passage L1 can be returned to the first-layer filter passage L1 for re-detection of the circulating filter purge. The purified gas in the confluence chamber 12L of the first layer of filtering passage L1 can enter the filtering units 4 of all the purifying chambers 21L of the second layer of filtering passage L2 for secondary filtering purification, and the gas sensors 5 in all the purifying chambers 21L of the second layer of filtering passage L2 detect and determine whether the purified gas of the secondary filtering purification reaches the respiration threshold value, determine whether the purified gas is discharged from the gas outlet 12 again, and provide clean filtered purified gas.

With reference to fig. 1, the filtering passages may further include a last filtering passage L3, the last filtering passage L3 is configured at the bottom of the second filtering passage L2 to be communicated, when the purified gas detected by the gas sensor 5 of the purifying chamber 21L of the second filtering passage L2 does not reach the respiration threshold, the outlet valve 24L of the purifying chamber 21L in which the gas sensor 5 of the second filtering passage L2 is located is closed without opening communication, so that the gas that does not reach the respiration threshold is not introduced into the collecting chamber 22L; wherein, when the gas sensor 5 of the cleaning chamber 31L of the last filtering passage L3 detects that the purified gas does not reach the breathing threshold, the outlet valves 34L of all the cleaning chambers 31L of the last filtering passage L3 are closed, and the inlet valve 25L of the confluence chamber 22L of the second filtering passage L2 is opened, so as to enable the purified gas of the second filtering passage L2 to return to the second filtering passage L2 for re-detection of the circulating filtering purification, while the purified gas of the confluence chamber 22L of the second filtering passage L2 can enter the filtering units 4 of all the cleaning chambers 31L of the last filtering passage L3 for secondary filtering purification, and the gas sensor 5 of all the cleaning chambers 31L of the last filtering passage L3 detects again to determine whether the purified gas of the secondary filtering purification reaches the breathing threshold, and determines whether the purified gas is discharged from the outlet end 12 again, providing a clean filtered of the purified gas.

Referring to fig. 1 and 7, the body 1 of the filtering and purifying device 10 is made of a soft, flexible and anti-allergic material, and can be inserted into a nostril of a user for sealing; in addition, the two filtering and purifying devices 10 can be connected by a connecting member 20, so that the two filtering and purifying devices 10 can be plugged into the two nostrils of the user respectively.

Referring to fig. 1, the filtering and purifying device 10 has a driving chip 7 and a battery 8, which are respectively packaged on the first layer of filtering path L1 by semiconductor process. The battery 8 provides an operation power source of the driving chip 7, and the driving chip 7 controls driving operations of the guide unit 3, the gas sensor 5, the

outlet valves

14L, 24L, 34L, and the

inlet valves

15L, 25L, 35L; wherein, the driving chip 7 further comprises a microprocessor (not shown) and a communicator (not shown), the microprocessor controls the driving operations of the diversion unit 3, the gas sensor 5, the

inlet valves

15L, 25L, 35L and the

outlet valves

14L, 24L, 34L, and can receive the gas quality data detected by the gas sensor 5 for operation processing, and transmit the gas quality data to the communicator for external transmission to an external device, and the external device receives and sends out warning notice and display; in addition, the air outlet end 12 of the body 1 can be connected and attached with a waterproof breathable film 9 for blocking the water vapor from passing through.

The gas sensor 5 can be a volatile organic compound sensor for detecting formaldehyde, ammonia gas, carbon monoxide, carbon dioxide, oxygen and ozone; or the gas sensor 5 is a virus sensor providing detection of viruses; or the gas sensor 5 is a gas particle sensor providing detection including PM10, PM2.5 or PM 1.

As shown in fig. 2A to 2C, the diversion unit 3 may be a micro-electromechanical blower type pump 3A, including: an air outlet base 31A, a first oxidation layer 32A, an air injection resonance layer 33A, a second oxidation layer 34A, a resonance cavity layer 35A and a first piezoelectric element 36A are all manufactured by semiconductor process. The semiconductor process of the present embodiment includes an etching process and a deposition process. The etching process may be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. The deposition process may be a physical vapor deposition Process (PVD), a chemical vapor deposition process (CVD), or a combination of both. The following description is not repeated.

The gas outlet base 31A is manufactured with a gas outlet chamber 311A and a compression chamber 312A by a silicon substrate etching process, and a through hole 313A is etched between the gas outlet chamber 311A and the compression chamber 312A; the first oxide layer 32A is deposited on the gas outlet base 31A and etched to remove the portion corresponding to the compression chamber 312A; the aforementioned air-jet resonance layer 33A is formed by a silicon substrate deposition process to be superimposed on the first oxide layer 32A, and is partially etched and removed to form a plurality of air-inlet holes 331A corresponding to the compression chamber 312A, and is partially etched and removed to form an air-jet hole 332A corresponding to the center of the compression chamber 312A, so as to form a suspension section 333A capable of moving and vibrating between the air-inlet holes 331A and the air-jet hole 332A; the second oxide layer 34A is deposited on the suspension section 333A of the air injection resonance layer 33A, and is partially etched away to form a resonance cavity section 341A, which is connected to the air injection hole 332A; the resonant cavity layer 35A is formed by a silicon substrate etching process to form a resonant cavity 351A, and is correspondingly bonded and overlapped on the second oxide layer 34A, so that the resonant cavity 351A corresponds to the resonant cavity section 341A of the second oxide layer 34A; the first piezoelectric element 36A is formed by a deposition process to be stacked on the resonant cavity layer 35A, and includes a first lower electrode layer 361A, a first piezoelectric layer 362A, a first insulating layer 363A, and a first upper electrode layer 364A, wherein the first lower electrode layer 361A is formed by a deposition process to be stacked on the resonant cavity layer 35A, the first piezoelectric layer 362A is formed by a deposition process to be stacked on a portion of the surface of the first lower electrode layer 361A, the first insulating layer 363A is formed by a deposition process to be stacked on a portion of the surface of the first piezoelectric layer 362A, and the first upper electrode layer 364A is formed by a deposition process to be stacked on the surface of the first insulating layer 363A and the surface of the first piezoelectric layer 362A not provided with the first insulating layer 363A, so as to be electrically connected to the first piezoelectric layer 362A.

As shown in fig. 2B to 2C, the gas-guiding output operation of the mems blower-type pump 3A is performed by driving the first piezoelectric element 36A to drive the gas-injection resonant layer 33A to resonate, so as to cause the floating section 333A of the gas-injection resonant layer 33A to generate reciprocating vibration displacement, so as to draw gas into the compression chamber 312A through the plurality of gas-inlet holes 331A, and then to be re-introduced into the resonance chamber 351A through the gas-injection holes 332A, so that the resonance chamber 351A and the floating section 333A generate Helmholtz resonance effect (Helmholtz resonance), and then the concentrated gas discharged from the resonance chamber 351A is introduced into the compression chamber 312A, passes through the through hole 313A, and is discharged from the gas-outlet chamber 311A at high pressure, thereby realizing high-pressure gas transmission, and the gas transmission efficiency can be improved.

Referring to fig. 3A, 3B to 3C, the flow guiding unit 3 may also be a micro-electromechanical pump 3B, which includes an air inlet base 31B, a third oxide layer 32B, a resonant layer 33B, a fourth oxide layer 34B, a vibrating layer 35B and a second piezoelectric element 36B, all manufactured by semiconductor process. The semiconductor process of the present embodiment includes an etching process and a deposition process. The etching process may be a wet etching process, a dry etching process or a combination thereof, but not limited thereto. The deposition process may be a physical vapor deposition Process (PVD), a chemical vapor deposition process (CVD), or a combination of both. The following description is not repeated.

The air inlet base 31B is manufactured with at least one air inlet hole 311B by a silicon substrate etching process; the third oxide layer 32B is formed by deposition process and stacked on the inlet pedestal 31B, and a plurality of converging channels 321B and a converging chamber 322B are formed by etching process, wherein the converging channels 321B are connected between the converging chamber 322B and the inlet holes 311B of the inlet pedestal 31B; the resonance layer 33B is formed by a silicon substrate deposition process to be superimposed on the third oxide layer 32B, and an etching process is performed to form a central through hole 331B, a vibration section 332B and a fixing section 333B, wherein the central through hole 331B is formed at the center of the resonance layer 33B, the vibration section 332B is formed at the peripheral region of the central through hole 331B, and the fixing section 333B is formed at the peripheral region of the resonance layer 33B; the fourth oxide layer 34B is formed by deposition process and is overlapped on the resonant layer 33B, and is partially etched to form a compressed cavity section 341B; the vibration layer 35B is formed by a silicon substrate deposition process overlying the fourth oxide layer 34B, and an etching process is performed to form an actuating section 351B, an outer edge section 352B and a plurality of air holes 353B, wherein the actuating section 351B is formed at a central portion, the outer edge section 352B is formed around the actuating section 351B, the plurality of air holes 353B are respectively formed between the actuating section 351B and the outer edge section 352B, and the vibration layer 35B and the compression cavity section 341B of the fourth oxide layer 34B define a compression chamber; the second piezoelectric element 36B is formed by a deposition process to overlap the actuating section 351B of the vibrating layer 35B, and includes a second lower electrode layer 361B, a second piezoelectric layer 362B, a second insulating layer 363B and a second upper electrode layer 364B, wherein the second lower electrode layer 361B is formed by a deposition process to overlap the actuating section 351B of the vibrating layer 35B, the second piezoelectric layer 362B is formed by a deposition process to overlap a portion of the surface of the second lower electrode layer 361B, the second insulating layer 363B is formed by a deposition process to overlap a portion of the surface of the second piezoelectric layer 362B, and the second upper electrode layer 364B is formed by a deposition process to overlap the surface of the second insulating layer 363B and the surface of the second piezoelectric layer 362B not provided with the second insulating layer 363B, so as to be electrically connected to the second piezoelectric layer 362B.

As shown in fig. 3B to 3C, the second piezoelectric element 36B is driven to drive the vibration layer 35B and the resonance layer 33B to generate resonance displacement, so that the introduced gas enters from the gas inlet 311B, is collected into the collecting chamber 322B through the collecting channel 321B, passes through the central through hole 331B of the resonance layer 33B, and is discharged from the plurality of gas holes 353B of the vibration layer 35B, thereby realizing a large flow rate of the gas.

As shown in fig. 4A and 4B, the

inlet valves

15L, 25L, 35L and the

outlet valves

14L, 24L, 34L may be valve units 6 that include a valve conductive layer 61, a valve base layer 62, and a flexible film 63 made of, but not limited to, graphene material to form miniaturized structures. The valve conductive layer 61 is made of charged piezoelectric material, and is electrically connected with the microprocessor to control the valve conductive layer 61 to deform, a section of accommodating space 64 is kept between the valve conductive layer 61 and the valve base layer 62, the valve conductive layer 61 is not deformed and is kept in the accommodating space 64 to form a distance with the valve base layer 62 when not receiving a driving signal, the flexible film 63 is made of flexible material and is attached to one side surface of the valve conductive layer 61 and is arranged in the accommodating space 64, a plurality of through

holes

61A, 62A and 63A are respectively formed on the valve conductive layer 61, the valve base layer 62 and the flexible film 63, the plurality of through holes 61A of the valve conductive layer 61 are aligned with the plurality of through holes 63A of the flexible film 63, and the plurality of through holes 62A of the valve base layer 62 are misaligned with the plurality of through holes 61A of the valve conductive layer 61. When the valve conductive layer 61 is not deformed, the valve conductive layer 61 is kept in the accommodating space 64 to form a gap with the valve base layer 62, and the plurality of through holes 62A of the valve base layer 62 and the plurality of through holes 61A of the valve conductive layer 61 are misaligned with each other to open the valve unit 6, so that gas can enter the accommodating space 64 through the plurality of through holes 62A of the valve base layer 62, and the plurality of through holes 61A of the valve conductive layer 61 and the plurality of through holes 63A of the flexible film 63 are aligned with each other, and then flow through the plurality of through holes 63A of the flexible film 63 and the plurality of through holes 61A of the valve conductive layer 61.

As shown in fig. 4B, when the valve conductive layer 61 deforms, the valve conductive layer 61 approaches and adheres to the valve base layer 62, so that the through holes 63A of the flexible film 63 are not aligned with the through holes 62A of the valve base layer 62, and the flexible film 63 seals the through holes 62A of the valve base layer 62 to close the valve unit 6, thereby stopping the gas from passing through.

Referring to fig. 4C and 4D, another embodiment of the valve unit 6 is different from the previous valve unit 6 in the number of through holes, the number of through

holes

61A and 63A of the valve conductive layer 61 and the flexible film 63 is two, the number of through holes 62A of the valve base layer 62 is one, and the rest of the materials and the operation method are the same and will not be described again.

Referring to fig. 5, a filtering and purifying method includes the following steps: 1. providing a filtering and purifying device; 2. carrying out diversion, air entraining, filtering and detection; 3. detecting and judging the purified gas; 4. circularly filtering and detecting the purified gas; 5. the purified gas is led out by multiple times of filtering purification.

Referring to fig. 1, 5 and 6, in step S1, the filtering and purifying apparatus 10 includes a first filtering passage L1, a second filtering passage L2 and a last filtering passage L3, wherein the first filtering passage L1, the second filtering passage L2 and the last filtering passage L3 are stacked and configured, the first filtering passage L1, the second filtering passage L2 and the last filtering passage L3 respectively include a plurality of purifying chambers 11L, 21L and 31L arranged in parallel, and the bottom of the purifying chambers is communicated with the merging chambers 12L, 22L and 32L, and one side of the purifying chambers 11L, 21L and 31L is configured with circulating passages 13L, 23L and 33L communicated with the merging chambers 12L, 22L and 32L, and the purifying chambers 11L, 21L and 31L include at least one flow guide unit 3, at least one filtering unit 4, at least one gas sensor 5 and one outlet valve 14L, 24L and 34L, and the circulation passages 13L, 23L, 33L have inlet valves 15L, 25L, 35L, the outlet valves 14L, 24L, 34L control the communication or the closure of the purge chambers 11L, 21L, 31L with the confluence chambers 12L, 22L, 32L, and the inlet valves 15L, 25L, 35L control the communication or the closure of the confluence chambers 12L, 22L, 32L with the circulation passages 13L, 23L, 33L.

In step S2, the

outlet valves

14L, 24L, 34L of the

purge chambers

11L, 21L, 31L of the first-layer filter passage L1, the second-layer filter passage L2, and the last-layer filter passage L3 are opened, and the flow guide units 3 are actuated to introduce the off-apparatus gas into the

purge chambers

11L, 21L, 31L, respectively, while the filter units 4 filter the introduced gas to form purge gas, and the purge gas is introduced into the

confluence chambers

12L, 22L, 32L.

In step S3, the gas sensor 5 of each of the

purge chambers

11L, 21L, and 31L of the first-layer filter passage L1, the second-layer filter passage L2, and the last-layer filter passage L3 detects the gas quality of the purge gas, and determines whether the gas quality of the purge gas reaches the respiration threshold.

In step S4, recirculation filtering and detection are performed when the purified gas in the first layer of filtering passage L1, the second layer of filtering passage L2 and the last layer of filtering passage L3 does not reach the respiration threshold, wherein the

outlet valves

14L, 24L, 34L of the

purification chambers

11L, 21L, 31L of the gas sensor 5 in the first layer of filtering passage L1, the second layer of filtering passage L2 and the last layer of filtering passage L3 are controlled to be closed, the

outlet valves

14L, 24L, 34L of each

purification chamber

11L, 21L, 31L of the next layer of filtering passage are closed, and the

inlet valves

15L, 25L, 35L of the

circulation passages

14L, 24L, 34L of the previous layer of filtering passage are opened, so that the purified gas in the previous layer of filtering passage can be returned to the previous layer of filtering passage for recirculation filtering, purification and detection.

In step S5, the purge gas from the

confluence chambers

12L, 22L of the previous filtering path enters the filtering units 4 of each

confluence chamber

22L, 32L of the next filtering path for secondary filtering and cleaning, and when the purge gas from the next filtering path reaches the breathing threshold, the

outlet valves

14L, 24L of the next filtering path are opened and then introduced into the last filtering path, and the purge gas is introduced into the last filtering path to perform multiple filtering and cleaning operations, and is discharged to provide breathing.

In summary, the filtering and purifying method provided by the present application is implemented by a filtering and purifying device, wherein the guiding unit guides the air into the filtering and purifying device for the filtering unit in the purifying device to filter the air, the air sensor detects the quality of the purified air, and when the quality of the purified air does not reach the breathing threshold, the air is filtered again until the quality of the purified air meets the breathing threshold, and the air is guided out.

Claims

1. A filtration purification treatment method comprises the following steps:

2. The method according to claim 1, wherein the filtration purification apparatus comprises a body having an inlet end and an outlet end, and the plurality of layers of the filtration passages are disposed in the body.

3. The filtration purification process of claim 2, wherein the body is made of a soft, flexible and anti-allergic material.

4. The filtering and purifying method as claimed in claim 2, wherein a plurality of layers of the filtering passages are stacked one on top of another in a semiconductor manufacturing process, the guiding unit of each purifying chamber of the filtering passages is disposed adjacent to the gas inlet end, the filtering units and the gas sensors are sequentially disposed below the guiding unit, the outlet valve is disposed below the gas sensors to close the purifying chambers, wherein the guiding unit drives the gas to be guided into the purifying chambers, the filtering units perform filtering to form the purified gas, the purified gas is detected by the gas sensors to determine whether the gas quality of the purified gas reaches the respiration threshold, and the purified gas is discharged through the outlet valve and introduced into the collecting chamber.

5. The filtration purification process of claim 1, wherein the filtration purification apparatus comprises a driving chip and a battery, the battery provides an operation power for the driving chip, and the driving chip controls the driving operations of the diversion unit, the gas sensor, the inlet valve and the outlet valve.

6. The filtration and purification method of claim 5, wherein the driving chip comprises a microprocessor and a communicator, the microprocessor controls the driving operations of the diversion unit, the gas sensor, the inlet valve and the outlet valve, and can receive the gas quality data of the purified gas detected by the gas sensor for calculation and transmit the gas quality data to the communicator to an external device, and the external device receives the data and sends out warning notification and display records.

7. The filtration purification process of claim 1, wherein the flow guide unit is a micro-electromechanical blower type pump, the micro-electromechanical blower type pump comprising:

an air outlet base, a through hole and a compression chamber are manufactured by a silicon substrate etching process, and the through hole is communicated with the compression chamber;

a first oxide layer formed by deposition process and superposed on the gas outlet base, and etched to remove the part corresponding to the compression chamber;

a jet resonance layer which is generated by a silicon substrate deposition process and is superposed on the first oxide layer, and forms a plurality of air inlet holes corresponding to partial etching removal of the compression chamber, and forms a jet hole corresponding to the partial etching removal of the center of the compression chamber, so that a suspension section capable of moving and vibrating is formed between the air inlet holes and the jet hole;

a second oxide layer formed by deposition process and overlapped on the suspension section of the jet resonance layer, and partially etched to form a resonance cavity section and communicated with the jet hole;

a resonant cavity layer, which is made by a silicon substrate etching process and is correspondingly bonded and overlapped on the second oxide layer to promote the resonant cavity to correspond to the resonant cavity section of the second oxide layer;

a first piezoelectric component, formed by deposition process and superposed on the resonant cavity layer, including a first lower electrode layer, a first piezoelectric layer, a first insulating layer and a first upper electrode layer, wherein the first lower electrode layer is formed by deposition process and superposed on the resonant cavity layer, the first piezoelectric layer is formed by deposition process and superposed on part of the surface of the first lower electrode layer, the first insulating layer is formed by deposition process and superposed on part of the surface of the first piezoelectric layer, the first upper electrode layer is formed by deposition process and superposed on the surface of the first insulating layer and the surface of the first piezoelectric layer not provided with the first insulating layer, so as to be electrically connected with the first piezoelectric layer;

the first piezoelectric component is driven to drive the gas injection resonance layer to generate resonance, so that the suspension section of the gas injection resonance layer generates reciprocating vibration displacement to attract the gas to enter the compression chamber through the plurality of gas inlet holes, the gas is guided into the resonant cavity through the gas injection holes, the gas is discharged from the resonant cavity and is concentrated into the compression chamber, and the gas is discharged through the through hole to form high-pressure discharge, so that the transmission flow of the gas is realized.

8. The filtration purification process of claim 1, wherein the flow-directing unit is a microelectromechanical pump, the microelectromechanical pump comprising:

an air inlet base, which is used for manufacturing at least one air inlet hole by a silicon substrate etching process;

a third oxide layer formed on the air inlet base by deposition process and having multiple converging channels and a converging groove formed by etching process, wherein the converging channels are communicated between the converging groove and the air inlet of the air inlet base;

a resonance layer formed by a silicon substrate deposition process and superposed on the third oxide layer, and an etching process to form a central through hole, a vibration section and a fixed section, wherein the central through hole is formed at the center of the resonance layer, the vibration section is formed at the peripheral area of the central through hole, and the fixed section is formed at the peripheral area of the resonance layer;

a fourth oxide layer formed by deposition process and overlapped on the resonance layer, and partially etched to form a compression cavity section;

a vibration layer which is formed by a silicon substrate deposition process and is superposed on the fourth oxide layer, and an actuating section, an outer edge section and a plurality of air holes are formed by an etching process, wherein the actuating section is formed at the central part, the outer edge section forms a periphery surrounding the actuating section, the plurality of air holes are respectively formed between the actuating section and the outer edge section, and the vibration layer and the compression cavity section of the fourth oxide layer define a compression chamber; and

a second piezoelectric component, which is formed by deposition process and is superposed on the actuating section of the vibration layer, and includes a second lower electrode layer, a second piezoelectric layer, a second insulating layer and a second upper electrode layer, wherein the second lower electrode layer is formed by deposition process and is superposed on the actuating section of the vibration layer, the second piezoelectric layer is formed by deposition process and is superposed on a part of the surface of the second lower electrode layer, the second insulating layer is formed by deposition process and is superposed on a part of the surface of the second piezoelectric layer, and the second upper electrode layer is formed by deposition process and is superposed on the surface of the second insulating layer and the surface of the second piezoelectric layer not provided with the second insulating layer, so as to be electrically connected with the second piezoelectric layer;

the second piezoelectric component is driven to drive the vibration layer and the resonance layer to generate resonance displacement, the gas is guided into the gas inlet hole, is collected into the collecting groove through the collecting channel, passes through the central through hole of the vibration layer and is discharged from the plurality of gas holes of the vibration layer, and the gas is transmitted and flows.

9. The filtration purification process of claim 1, wherein the gas sensor is a volatile organic compound sensor providing detection of formaldehyde, ammonia, carbon monoxide, carbon dioxide, oxygen, ozone.

10. The filtration purification process of claim 1, wherein the gas sensor is a virus sensor providing detection of a virus.

11. The method of claim 1, wherein the gas sensor is a gas particle sensor providing detection including PM10, PM2.5, or PM 1.

12. The filtration purification process of claim 1, wherein the filtration unit is an efficient screen.

13. The filtration purification process of claim 1, wherein the filtration unit is an efficient filter screen coated with a layer of chlorine dioxide cleaning factor for inhibiting viruses and bacteria in the gas.

14. The filtration purification process of claim 1, wherein the filtration unit is a high-efficiency filter coated with a herbal protective coating layer from which ginkgo biloba and japanese rhus chinensis are extracted to form a herbal protective anti-allergy filter effective in anti-allergy and destroying influenza virus surface proteins contained in the gas passing through the high-efficiency filter.

15. The filtration purification treatment method according to claim 1, wherein the inlet valve and the outlet valve are each a valve unit, the valve unit comprises a valve conductive layer, a valve base layer and a flexible film, the valve conductive layer is made of a piezoelectric material charged with electricity and is deformed by electrical connection control of a microprocessor, the valve conductive layer and the valve base layer maintain a section of accommodating space, the flexible film is made of a flexible material and attached to one side surface of the valve conductive layer and disposed in the accommodating space, and a plurality of through holes are formed in the valve conductive layer, the valve base layer and the flexible film, respectively, the through holes of the valve conductive layer and the through holes of the flexible film are aligned with each other, the through holes of the valve base layer and the through holes of the valve conductive layer are misaligned with each other, when the valve conductive layer is not controlled by the microprocessor, the valve conductive layer is maintained in the accommodating space at a distance from the valve base layer, and the through hole of the valve base layer and the through hole of the valve conductive layer are staggered and misaligned to form the opening of the valve unit, when the valve conductive layer is controlled by the microprocessor to deform, the valve conductive layer is close to and attached to the valve base layer, the through hole of the flexible film is not aligned to the through hole of the valve base layer, and the flexible film seals the through hole of the valve base layer to form the closing of the valve unit.

16. The filtration purification process of claim 2, wherein a waterproof and breathable membrane is bonded to the gas outlet end of the body.