CN114094437B - Single-tube front-end double-beam parallel output super-radiation light-emitting diode - Google Patents

Single-tube front-end double-beam parallel output super-radiation light-emitting diode Download PDF

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CN114094437B
CN114094437B CN202111375895.3A CN202111375895A CN114094437B CN 114094437 B CN114094437 B CN 114094437B CN 202111375895 A CN202111375895 A CN 202111375895A CN 114094437 B CN114094437 B CN 114094437B
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waveguide
light emitting
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emitting diode
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CN114094437A (en
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晏长岭
杨静航
冯源
郝永芹
李辉
徐莉
逄超
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Changchun University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

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Abstract

A single tube front end double light beam parallel output super radiation LED belongs to the semiconductor luminescent device technical field. The prior art has the defects that: there is a loss of light energy; the process difficulty is high; the light output power is difficult to increase; the parallelism of multiple beams is difficult to guarantee. The invention is characterized in that a combined waveguide of the superradiance light emitting diode is composed of an upper waveguide, an upper limiting layer, a covering layer and an upper electrode, the combined waveguide is composed of a curvature gradual change region waveguide and two output waveguides, the two output waveguides are parallel to each other and are respectively positioned at the front left end and the front right end of the curvature gradual change region waveguide, the overlooking shape of the curvature gradual change region waveguide is a graph enclosed by a curvature gradual change curve and a straight line, the combined waveguide is formed by one-time etching on a main body, the parts of the front end surface of the active layer, which correspond to the front end surfaces of the two output waveguides, are light emitting windows, and the two light emitting windows are manufactured with the same anti-reflection coating.

Description

Single-tube front-end double-beam parallel output super-radiation light-emitting diode
Technical Field
The invention relates to a single-tube front-end double-beam parallel output super-radiation light-emitting diode, belonging to the technical field of semiconductor light-emitting devices.
Background
An SLD (Super Luminescent Diode) is a semiconductor light emitting device with a light emitting characteristic between an LD (laser Diode) and an LED (light emitting Diode), has the characteristics of high power, gaussian wide spectrum, weak temporal coherence, high efficiency, and the like, and is used as a light source in low coherence interference detection systems such as an optical fiber gyroscope, an optical time domain reflectometer, optical coherence tomography, and the like.
SLD is a process in which electrons inversely distributed in an active layer during forward current injection are recombined with holes to release photons when they transit from a conduction band to a valence band or an impurity level, and these spontaneously emitted photons are amplified by a gain when they propagate in a given cavity. SLD is a light emitting device characterized by an internal one-way gain. The SLD has a similar luminescence principle as the edge-emitting LD, and is excited and amplified by spontaneous emission; the difference between the two is whether there is oscillation and mode selection during the light emission. The edge-emitting LD utilizes light reflection (total reflection at one end and reflection at the other end) between cleavage surfaces (cavity surfaces) at two ends of the cavity to perform oscillation mode selection, thereby improving the light output power; and SLD utilizes the oblique waveguide structure and anti-reflection coating technology, effectively reduces the cavity surface reflectivity, lightens the optical feedback, inhibits the F-P cavity resonance, and realizes the broad spectrum luminescence.
The conventional SLD having an oblique waveguide structure and an anti-reflection coating is structurally characterized in that a device is sequentially provided with an upper electrode 1, a covering layer 2, an upper limiting layer 3, an upper waveguide 4, an active layer 5, a lower waveguide 6, a lower limiting layer 7, a substrate 8 and a lower electrode 9 from top to bottom, as shown in fig. 1, wherein the lower electrode 9, the substrate 8, the lower limiting layer 7, the lower waveguide 6 and the active layer 5 form a cubic main body of the device, and each layer of the main body has the same length and width and different thicknesses; the parallelogram cylindrical oblique waveguide of the device is composed of an upper waveguide 4, an upper limiting layer 3, a covering layer 2 and an upper electrode 1, as shown in fig. 1 and fig. 2, the overlooking shape is a parallelogram, the front end surface and the rear end surface of the oblique waveguide are respectively flush with the front end surface and the rear end surface of a main body, the front-back direction of the oblique waveguide forms a certain included angle theta with the front-back direction of the main body, the front-back direction of the oblique waveguide refers to the connecting line direction of the midpoints of the front and rear opposite sides of the parallelogram, and the front-back direction of the main body refers to the connecting line direction of the midpoints of the front and rear opposite sides of the regular quadrilateral on the top surface of the cube. The front end face and the rear end face of the main active layer 5 are respectively provided with coatings with different anti-reflection performances, on one hand, on the premise of realizing wide-spectrum light emission of the device, the part of the front end face of the active layer 5 corresponding to the front end face of the inclined waveguide is a light emission window 10, so that high-power light emission is realized, and the part of the rear end face of the active layer 5 corresponding to the rear end face of the inclined waveguide can not avoid light output, as shown in fig. 2, and on the other hand, the service life of the device can be prolonged.
In order to further increase the output power of the SLD, the prior art has two or more SLDs arranged in parallel or in an array to achieve a higher power output.
However, the prior art has the disadvantages that firstly, the optical energy loss is caused, the light is emitted from the rear end face of the active layer 5, the partial power output is not effectively utilized, and the effective light output of the device is reduced; secondly, the process difficulty is high, because the coatings manufactured on the front end face and the rear end face of the active layer 5 are different, different cavity mask processes are needed to be adopted for completion, so that not only are the process steps increased, but also the process difficulty is increased, for example, the materials of the front end face coating and the rear end face coating are different, and measures must be taken to prevent mutual pollution; thirdly, the light output power is difficult to improve, the light output power is limited by the size of the chip, the length of the light-emitting cavity is limited, the effective gain area is small, the saturation gain level is low, and the improvement of the light output power of the device is directly limited; fourthly, parallelism of multiple light beams is difficult to guarantee, no matter two SLD single tubes are arranged in parallel or a plurality of SLD single tubes are arranged into an array, the manufactured device single tubes are arranged in parallel, integration degree of the array is low, precision operation is difficult, uniformity of output light is poor, high parallelism of the light beams is difficult to guarantee, and new problems are brought to SLD application, such as even distribution of the light beams to optical fibers and low efficiency.
Disclosure of Invention
In order to overcome the defects of the conventional SLD with an inclined waveguide structure and an anti-reflection coating and a manufacturing process and further improve the output power, the invention provides a single-tube front-end double-beam parallel output superluminescent light-emitting diode.
The single-tube front-end double-beam parallel output super-radiation light-emitting diode is sequentially provided with an upper electrode 1, a covering layer 2, an upper limiting layer 3, an upper waveguide 4, an active layer 5, a lower waveguide 6, a lower limiting layer 7, a substrate 8 and a lower electrode 9 from top to bottom, as shown in figure 3, wherein the lower electrode 9, the substrate 8, the lower limiting layer 7, the lower waveguide 6 and the active layer 5 form a cubic body of the super-radiation light-emitting diode, and each layer of the body is the same in length and width and different in thickness; the superradiation light-emitting diode is characterized in that a combined waveguide of the superradiation light-emitting diode is composed of an upper waveguide 4, an upper limiting layer 3, a covering layer 2 and an upper electrode 1, as shown in fig. 3 and 4, the combined waveguide is composed of a curvature gradient region waveguide 11 and two output waveguides 12, the two output waveguides 12 are parallel to each other and are respectively located at the front left end and the front right end of the curvature gradient region waveguide 11, the overlooking shape of the curvature gradient region waveguide 11 is a graph enclosed by a curvature gradient curve and a straight line, the combined waveguide is formed by etching on a main body at one time, the parts of the front end face of an active layer 5, corresponding to the front end faces of the two output waveguides 12, are light-emitting windows 10, and the two light-emitting windows 10 are made of the same anti-reflection coating.
The technical effects of the present invention are as follows.
In the invention, the front end surfaces of two output waveguides 12 in the combined waveguide are both positioned at the front end of the superluminescent diode, two light-emitting windows 10 are positioned at the same side, and because the main part of the combined waveguide, namely the side wall of the waveguide 11 with the curvature gradually-changing area is a curvature gradually-changing cylindrical surface, the reflection angles of photons at positions are different, thereby effectively inhibiting microcavity annular resonance, the output waveguides 12 are only the subsidiary parts of the combined waveguide, and the resonance of photons can not be caused no matter the combined waveguide is a straight waveguide or an inclined waveguide, if an antireflection coating technology is supplemented, the final effect is to avoid the waste of light energy and realize the output of low-coherence, broad spectrum and high-power light.
Because the two light-emitting windows 10 are not only positioned at the same side, but also the anti-reflection coatings are the same, the coating can be manufactured at one time, the problem that the anti-reflection coatings for manufacturing the two light-emitting windows 10 are polluted by each other does not exist, and the problem that the process difficulty is improved does not exist. Meanwhile, although the combined waveguide is composed of the waveguide 11 with the curvature gradually-changing region and the two output waveguides 12, the structure of the combined waveguide seems to be more complicated compared with the prior art adopting one inclined waveguide, in the manufacturing process of the combined waveguide, as in the prior art, a mask pattern is designed and is formed by adopting a photoetching process for one-time etching, and the problem of improvement of process difficulty does not exist.
Compared with the existing single oblique waveguide, on the premise that the chip size is the same, the combined waveguide is obviously increased in length and area, so that the one-way gain length of photons in the cavity is effectively increased, the area of an injection current pump is increased, the differential resistance is effectively reduced, the saturation gain level and the output power are improved, the heat dissipation effect is improved, the thermal resistance is effectively reduced, and the optical output power is further improved.
The two output waveguides 12 in the combined waveguide can be manufactured in one step in the manufacturing process of the single-tube device, so that the integration level of the light-emitting window 10 is improved, the parallelism between the two output waveguides 12 is easy to ensure, the uniformity of output light is improved, and the parallelism between light beams is improved.
Drawings
Fig. 1 is a perspective view of an overall structure of a conventional SLD having an inclined waveguide structure and an anti-reflection coating. Fig. 2 is a top view of a conventional SLD with slanted waveguide structure and anti-reflective coating. FIG. 3 is a perspective view of the whole structure of the single-tube front-end dual-beam parallel-output super-radiation LED of the present invention. Fig. 4 is a top view of the structure of the single-tube front-end dual-beam parallel output super-radiation led of the present invention, especially illustrating the top view of the combined waveguide, which is also taken as an abstract figure.
Detailed Description
The curvature gradient curve is an involute curve, for example, the polar coordinate equation is R = R 0 A spiral of (1 + ε cos (θ)), or a polar equation of
Figure BDA0003363963070000031
In which: r is polar radius, theta is polar angle, theta = 0-pi, epsilon is deformation coefficient, and epsilon = 0.3-2 0 Is the characteristic radius, i.e. the polar radius when the polar angle of the spiral, theta = pi/2, is 0 deg..
The output waveguides 12 have two schemes, the first is that both the two output waveguides 12 are straight waveguides, and the second is that both the two output waveguides 12 are oblique waveguides.
The fabrication process of the single-tube front-end dual-beam parallel output superradiance LED of the present invention is as follows.
As shown in FIG. 3, a lower limiting layer 7 made of N-type GaAs and a lower limiting layer 7 made of N-type Al are sequentially grown on a substrate 8 made of N-type GaAs with high doping concentration by a semiconductor epitaxial growth process 0.5 The lower waveguide 6 of GaAs is made of Al 0.2 The GaAs/GaAs multi-quantum well structure active layer 5 is made of P-type Al 0.5 An upper waveguide 4 made of GaAs, an upper limiting layer 3 made of P-type GaAs, and a covering layer 2 made of P-type GaAs with high doping concentration; an upper electrode 1 made of Au/Ge/Ni is manufactured on the covering layer 2, the thickness of the upper electrode is about 300nm, a lower electrode 9 made of Ti/Pt/Au is manufactured on the lower side of the substrate 8, the thickness of the lower electrode is about 300nm, and the upper electrode 1 and the lower electrode 9 are manufactured by first layering and then alloying treatment; manufacturing a combined waveguide by adopting a semiconductor photoetching process, manufacturing a mask according to a overlooking graph of the combined waveguide, and photoetching to form an interface of the upper waveguide 4 and the active layer 5; the parts of the front end surface of the active layer 5 corresponding to the front end surfaces of the two output waveguides 12 are light-emitting windows 10, and the same anti-reflection coatings are manufactured on the two light-emitting windows 10.

Claims (3)

1. The single-tube front-end double-beam parallel output super-radiation light-emitting diode is characterized in that an upper electrode (1), a covering layer (2), an upper limiting layer (3), an upper waveguide (4), an active layer (5), a lower waveguide (6), a lower limiting layer (7), a substrate (8) and a lower electrode (9) are sequentially arranged from top to bottom, wherein the lower electrode (9), the substrate (8), the lower limiting layer (7), the lower waveguide (6) and the active layer (5) form a cubic body of the super-radiation light-emitting diode, and each layer of the body is the same in length and width and different in thickness; the superradiance light emitting diode is characterized in that a combined waveguide of the superradiance light emitting diode is composed of an upper waveguide (4), an upper limiting layer (3), a covering layer (2) and an upper electrode (1), the combined waveguide is composed of a curvature gradient region waveguide (11) and two output waveguides (12), the two output waveguides (12) are parallel to each other and are respectively located at the front left end and the front right end of the curvature gradient region waveguide (11), the overlooking shape of the curvature gradient region waveguide (11) is a graph formed by enclosing a curvature gradient curve and a straight line, the combined waveguide is formed by etching on a main body at one time, two light emitting windows (10) are located on the front end face of an active layer (5), the two light emitting windows (10) respectively correspond to the front end faces of the two output waveguides (12) in the up-down direction, and the two light emitting windows (10) are provided with the same antireflection coating.
2. According to the rightThe single-tube front-end dual-beam parallel output superradiance light emitting diode of claim 1, wherein the curvature gradient curve is an involute including a polar equation of R = R 0 A spiral of (1 + ε cos (θ)), or a polar equation of
Figure FDA0003904172520000011
In which: r is the polar radius, theta is the polar angle, and theta = 0-pi, epsilon is the deformation coefficient, and epsilon = 0.3-2 0 Is the characteristic radius, i.e. the polar radius when the polar angle of the spiral θ = π/2, and the polar angle of the spiral θ =0.
3. The single-tube front-end dual-beam parallel output superradiance led of claim 1, wherein the output waveguides (12) have two schemes, the first scheme is that both output waveguides (12) are straight waveguides, and the second scheme is that both output waveguides (12) are oblique waveguides.
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JP3393634B2 (en) * 1996-08-28 2003-04-07 日本電信電話株式会社 Super luminescent diode
JP2007165689A (en) * 2005-12-15 2007-06-28 Fujifilm Corp Super luminescent diode
KR100884353B1 (en) * 2007-09-18 2009-02-18 한국전자통신연구원 High-power broad-band super-luminescent diode and method of fabricating the same
US9397254B2 (en) * 2013-10-24 2016-07-19 Electronics And Telecommunications Research Institute Superluminescent diode and method for implementing the same
CN104485403A (en) * 2014-12-31 2015-04-01 中国科学院半导体研究所 Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof
CN205881934U (en) * 2016-06-30 2017-01-11 武汉光安伦光电技术有限公司 Polarization superradiance emitting diode chip that has nothing to do

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