CN104485403A - Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof - Google Patents
Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof Download PDFInfo
- Publication number
- CN104485403A CN104485403A CN201410854195.6A CN201410854195A CN104485403A CN 104485403 A CN104485403 A CN 104485403A CN 201410854195 A CN201410854195 A CN 201410854195A CN 104485403 A CN104485403 A CN 104485403A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- sweep
- light emitting
- radiation light
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000005855 radiation Effects 0.000 claims description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 239000010410 layer Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 17
- 239000011247 coating layer Substances 0.000 claims description 12
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000001228 spectrum Methods 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000012014 optical coherence tomography Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a curved waveguide quantum dot super-luminescent diode with the gradually-varied curvature and a manufacturing method of the curved waveguide quantum dot super-luminescent diode. The super-luminescent diode comprises a substrate, a quantum dot gain medium on the substrate and a waveguide structure. The waveguide structure comprises a straight segment part and a curved part, wherein the curve of the curved part is a part of a polynomial, a part of a hyperbola and a part of an ellipse. The curving loss of the super-luminescent diode is increased along with the decrease of the curvature radius so that the loss can be reduced. Besides, under the condition that the length of the curved part or the final deviation angle is not changed, output power can be increased, and similar spectrum output still can be kept.
Description
Technical field
The invention belongs to semi-conductor electronic device field, quantum dot super radiation light emitting tube particularly relating to a kind of low-loss power and preparation method thereof.
Background technology
Super radiation light emitting tube is fibre optic gyroscope, light source conventional in optical coherent chromatographic imaging (being called for short OCT) system, because super radiation light emitting tube has wider spectrum, therefore optical coherence tomography system is made to have higher longitudinal frame, but in actual applications, we often need larger power output to improve the dynamic range of Optical coherence tomography.One section of circular arc that radius of curvature that what the sweep of traditional curved waveguide super radiation light emitting tube adopted is is constant, thus make bending loss coefficient in optical transmission process constant, cause the loss of can not ignore, if and the form of sweep is changed into radius of curvature change waveguiding structure, the bending loss index variation in different places can be made like this, the place of the connection of straight bars sections and sweep not only can be made to link together, and can bending loss be reduced, increase optical output power.
Summary of the invention
(1) technical problem that will solve
The object of the invention is to quantum dot super radiation light emitting tube proposing low-loss power and preparation method thereof, make it constant in sweep length, the angle of final light direction and light output end normal direction realizes lower loss when constant, thus in Optical Coherence Tomography Imaging Technology, improve test dynamic range.
(2) technical scheme
For solving the problems of the technologies described above, the present invention proposes a kind of curved waveguide quantum dot super radiation light emitting tube, comprising: substrate; Be positioned at the quantum dot gain medium on substrate; Waveguiding structure, comprises straight part and sweep, and the curve of sweep is an oval part.
According to a kind of embodiment of the present invention, the formula of sweep is
According to a kind of embodiment of the present invention, the radius of curvature of described sweep is gradual change.
According to a kind of embodiment of the present invention, the final deflecting angle of described waveguiding structure and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
According to a kind of embodiment of the present invention, its epitaxial structure is followed successively by substrate, resilient coating, lower coating layer, active area, upper coating layer, ohmic contact layer.
According to a kind of embodiment of the present invention, described active area is indium arsenide/gallium arsenide quantum node structure.
The present invention also proposes a kind of preparation method of curved waveguide quantum dot super radiation light emitting tube, comprising: step S1: on epitaxial wafer, apply one deck photoresist; Step S2: adopt photoetching method to etch waveguiding structure, comprise straight part and sweep, the formula of the curve of sweep is
step S3: adopt the method for corrosion by waveguiding structure Graphic transitions on epitaxial wafer; Step S4: on-chip photoresist is removed; Step S5: grow layer of silicon dioxide insulating barrier on substrate; Step S6: again apply photoresist on substrate; Step S7: output electrical pumping window in curved waveguide structure; Step S8: remove photoresist; Step S9: at the back side of substrate and front growing metal electrode; Step S10: alloying of having annealed.
The present invention proposes a kind of curved waveguide quantum dot super radiation light emitting tube on the other hand, comprising: substrate;
Be positioned at the quantum dot gain medium on substrate; Waveguiding structure, comprises straight part and sweep, and the curve of sweep is a hyp part.
According to a kind of embodiment of the present invention, the formula of sweep is
According to a kind of embodiment of the present invention, the radius of curvature of sweep is gradual change.
According to a kind of embodiment of the present invention, the final deflecting angle of described waveguiding structure and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
According to a kind of embodiment of the present invention, its epitaxial structure is followed successively by substrate, resilient coating, lower coating layer, active area, upper coating layer, ohmic contact layer.
According to a kind of embodiment of the present invention, described active area is indium arsenide/gallium arsenide quantum node structure.
The present invention also proposes a kind of manufacture method of curved waveguide quantum dot super radiation light emitting tube, comprising: step S1: on epitaxial wafer, apply one deck photoresist; Step S2: adopt photoetching method to etch curved waveguide structure, comprise straight part and sweep, the formula of the curve of sweep is
step S3: adopt the method for corrosion by waveguiding structure Graphic transitions on epitaxial wafer; Step S4: on-chip photoresist is removed; Step S5: grow layer of silicon dioxide insulating barrier on substrate; Step S6: again apply photoresist on substrate; Step S7: output electrical pumping window on waveguiding structure; Step S8: remove photoresist; Step S9: at the back side of substrate and front growing metal electrode; Step S10: alloying of having annealed.
The present invention also proposes a kind of curved waveguide quantum dot super radiation light emitting tube, comprising: substrate; Be positioned at the quantum dot gain medium on substrate; Curved waveguide structure, comprises straight part and sweep, and the curve of sweep is a polynomial part.
According to a kind of embodiment of the present invention, the formula of sweep is y=az
2.2+ bz
2.1.
According to a kind of embodiment of the present invention, the radius of curvature of sweep is gradual change.
According to a kind of embodiment of the present invention, the final deflecting angle of described waveguiding structure and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
According to a kind of embodiment of the present invention, its epitaxial structure is followed successively by substrate, resilient coating, lower coating layer, active area, upper coating layer, ohmic contact layer.
According to a kind of embodiment of the present invention, described active area is indium arsenide/gallium arsenide quantum node structure.
The present invention also proposes a kind of manufacture method of curved waveguide quantum dot super radiation light emitting tube, comprising: step S1: on epitaxial wafer, apply one deck photoresist; Step S2: adopt photoetching method to etch curved waveguide structure, comprise straight part and sweep, the formula of the curve of sweep is y=az
2.2+ bz
2.1; Step S3: adopt the method for corrosion by described waveguiding structure Graphic transitions on epitaxial wafer; Step S4: on-chip photoresist is removed; Step S5: grow layer of silicon dioxide insulating barrier on substrate; Step S6: again apply photoresist on substrate; Step S7: output electrical pumping window on described waveguiding structure; Step S8: remove photoresist; Step S9: at the back side of substrate and front growing metal electrode; Step S10: alloying of having annealed.
(3) beneficial effect
The low-loss power quantum dot super radiation light emitting tube that the present invention proposes can in sweep length, final deviation angle realizes large power stage when constant, and the superradiation light-emitting tube power being the circular arc of 8.2mm with traditional employing radius of curvature increases to some extent;
The method of the curved waveguide quantum dot super radiation light emitting tube of preparation radius of curvature provided by the invention gradual change is simple, is easy to realize.
Accompanying drawing explanation
Fig. 1 is the plane graph that sweep adopts the quantum dot super radiation light emitting tube of oval radius of curvature tapered waveguide;
Fig. 2 is the plane graph that sweep adopts the quantum dot super radiation light emitting tube of hyp radius of curvature tapered waveguide;
Fig. 3 is the plane graph that sweep adopts the quantum dot super radiation light emitting tube of polynomial radius of curvature tapered waveguide;
Fig. 4 is the structure diagram of epitaxial wafer;
Fig. 5 is preparation technology's flow chart of superradiation light-emitting tube device;
Fig. 6 is that sweep adopts radius of curvature to be the circular arc of 8.2mm, and sweep length is the P-I simulation curve of the curved waveguide quantum dot super radiation light emitting tube of 1mm;
Fig. 7 is that sweep adopts
the P-I simulation curve of the curved waveguide quantum dot super radiation light emitting tube of (e=17.607, f=12,0≤z≤1mm);
Fig. 8 is that sweep adopts
the P-I simulation curve of the curved waveguide quantum dot super radiation light emitting tube of (c=2, d=4,0≤z≤1mm);
Fig. 9 is that sweep adopts y=az
2.2+ bz
2.1the P-I simulation curve of the curved waveguide quantum dot super radiation light emitting tube of (a=-0.159, b=0.225,0≤z≤1mm).
Embodiment
The quantum dot super radiation light emitting tube of the curved waveguide of the curvature gradual change that the present invention proposes, comprise: substrate and the quantum dot gain medium be positioned on substrate, and waveguiding structure, waveguiding structure comprises straight part and sweep, the curve of sweep can be an oval part, a hyp part and a polynomial part, formula is respectively
Y=az
2.2+ bz
2.1, a, b, c, d, e, f are parameter, and y, z are two coordinates of plane coordinate system.
The preparation method of the curved waveguide quantum dot super radiation light emitting tube that the present invention also proposes, comprising:
Step S1: apply one deck photoresist on epitaxial wafer;
Step S2: adopt photoetching method to etch curved waveguide structure, it comprises straight part and sweep, and the curvature of sweep is gradual change;
Step S3: adopt the method for corrosion by waveguiding structure Graphic transitions on epitaxial wafer;
Step S4: on-chip photoresist is removed;
Step S5: grow layer of silicon dioxide insulating barrier on substrate;
Step S6: again apply photoresist on substrate;
Step S7: output electrical pumping window on bent waveguiding structure;
Step S8: remove photoresist;
Step S9: at the back side of substrate and front growing metal electrode;
Step S10: alloying of having annealed.
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 1 is the plane graph that sweep adopts the quantum dot super radiation light emitting tube of oval radius of curvature tapered waveguide.As shown in Figure 1, waveguiding structure comprises straight part and sweep, and sweep adopts oval
e, f are parameter, and y, z are two coordinates of plane coordinate system, and 0≤z≤1mm.The curvature of the waveguiding structure of sweep is gradual change.Preferably, the final deflecting angle of waveguide and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
Fig. 2 is the plane graph that sweep adopts the quantum dot super radiation light emitting tube of hyp radius of curvature tapered waveguide.As shown in Figure 2, sweep adopts hyperbola
c, d are parameter, and y, z are two coordinates of plane coordinate system, and 0≤z≤1mm.The radius of curvature of sweep is gradual change.Preferably, the final deflecting angle of waveguide and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
Fig. 3 is the plane graph that sweep adopts the quantum dot super radiation light emitting tube of polynomial radius of curvature tapered waveguide.As shown in Figure 3, sweep adopts multinomial y=az
2.2+ bz
2.1, a, b are parameters, and y, z are two coordinates of plane coordinate system, 0≤z≤1mm.The radius of curvature of curved waveguide is gradual change, and the radius of curvature of sweep changes from just infinite.Preferably, the final deflecting angle of waveguide and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
Refer to Fig. 4, the epitaxial slice structure of the curved waveguide quantum dot super radiation light emitting tube of radius of curvature gradual change is as follows: use MBE method to deposit GaAs resilient coating 3 successively on the substrate 2, n-AlGaAs lower limit layer 4, InAs/GaAs quantum dot active region 5, p-AlGaAs upper limiting layer 6, p+-GaAs ohmic contact layer 7, silicon dioxide insulating layer 8.
Refer to Fig. 5, the fabrication processing of the curved waveguide quantum dot super radiation light emitting tube of radius of curvature gradual change, comprises the following steps:
First, the epitaxial wafer cleaned up applies photoresist, then adopt common photoetching process to engrave curved waveguide structure at photoresist.
Then, wet etching method is utilized to corrode upper limiting layer 7 and ohmic contact layer 8, by the Graphic transitions on photoresist on epitaxial wafer.
Then, adopt the method for PECVD above the groove etched and the silicon dioxide insulating layer 8 of sidewall deposition thickness 400nm.
Then, adopt photoetching and wet corrosion technique to open electrical pumping window on ohmic contact layer 7, and adopt the method for electron beam evaporation to prepare titanium electrode 9.
Finally, to look unfamiliar after substrate thinning polishing long gold germanium nickel backplate 1 at n.
Wherein the active layer of epitaxial wafer adopts indium arsenide/Gallium indium arsenide/GaAs (InAs/In0.15Ga0.85As/GaAs) quantum-dot structure, wherein InAs Quantum Dots Growth is on GaAs layer, In0.15Ga0.85As stress relieve layer is covered on InAs quantum dot, and active layer covers the InAs quantum-dot structure containing 5 ~ 10 cycles.
Fig. 7 is that sweep adopts
the P-I simulation curve of the curved waveguide quantum dot super radiation light emitting tube of (e=17.607, f=12,0≤z≤1mm); Fig. 8 is that sweep adopts
the P-I simulation curve of the curved waveguide quantum dot super radiation light emitting tube of (c=2, d=4,0≤z≤1mm); Fig. 9 is that sweep adopts y=az
2.2+ bz
2.1the P-I simulation curve of the curved waveguide quantum dot super radiation light emitting tube of (a=-0.159, b=0.225,0≤z≤1mm).
As can be seen from Fig. 7 ~ 9, in curved waveguide quantum dot super radiation light emitting tube, if adopt the structure of curvature gradual change to curved waveguide, effectively can increase optical output power, adopt oval, hyperbola and polynomial construction in curved waveguide structure, the luminous power exported from curved waveguide end increases 7%, 11% and 20% (being the super radiation light emitting tube of the constant arc structure of curvature relative to curved waveguide end) respectively.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (21)
1. a curved waveguide quantum dot super radiation light emitting tube, comprising:
Substrate;
Be positioned at the quantum dot gain medium on substrate;
Waveguiding structure, comprises straight part and sweep, and the curve of sweep is an oval part.
2. quantum dot super radiation light emitting tube according to claim 1, is characterized in that, the formula of sweep is
3. quantum dot super radiation light emitting tube according to claim 2, is characterized in that, the radius of curvature of described sweep is gradual change.
4. quantum dot super radiation light emitting tube according to claim 3, is characterized in that, the final deflecting angle of described waveguiding structure and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
5. quantum dot super radiation light emitting tube according to claim 1, is characterized in that, its epitaxial structure is followed successively by substrate, resilient coating, lower coating layer, active area, upper coating layer, ohmic contact layer.
6. quantum dot super radiation light emitting tube according to claim 5, is characterized in that, described active area is indium arsenide/gallium arsenide quantum node structure.
7. a preparation method for curved waveguide quantum dot super radiation light emitting tube, comprising:
Step S1: apply one deck photoresist on epitaxial wafer;
Step S2: adopt photoetching method to etch waveguiding structure, comprise straight part and sweep, the formula of the curve of sweep is
Step S3: adopt the method for corrosion by waveguiding structure Graphic transitions on epitaxial wafer;
Step S4: on-chip photoresist is removed;
Step S5: grow layer of silicon dioxide insulating barrier on substrate;
Step S6: again apply photoresist on substrate;
Step S7: output electrical pumping window in curved waveguide structure;
Step S8: remove photoresist;
Step S9: at the back side of substrate and front growing metal electrode;
Step S10: alloying of having annealed.
8. a curved waveguide quantum dot super radiation light emitting tube, comprising:
Substrate;
Be positioned at the quantum dot gain medium on substrate;
Waveguiding structure, comprises straight part and sweep, and the curve of sweep is a hyp part.
9. quantum dot super radiation light emitting tube according to claim 8, is characterized in that, the formula of sweep is
10. quantum dot super radiation light emitting tube according to claim 9, is characterized in that, the radius of curvature of sweep is gradual change.
11. quantum dot super radiation light emitting tubes according to claim 10, is characterized in that, the final deflecting angle of described waveguiding structure and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
12. quantum dot super radiation light emitting tubes according to claim 8, is characterized in that, its epitaxial structure is followed successively by substrate, resilient coating, lower coating layer, active area, upper coating layer, ohmic contact layer.
13. quantum dot super radiation light emitting tubes according to claim 12, is characterized in that, described active area is indium arsenide/gallium arsenide quantum node structure.
The manufacture method of 14. 1 kinds of curved waveguide quantum dot super radiation light emitting tubes, comprising:
Step S1: apply one deck photoresist on epitaxial wafer;
Step S2: adopt photoetching method to etch curved waveguide structure, comprise straight part and sweep, the formula of the curve of sweep is
Step S3: adopt the method for corrosion by waveguiding structure Graphic transitions on epitaxial wafer;
Step S4: on-chip photoresist is removed;
Step S5: grow layer of silicon dioxide insulating barrier on substrate;
Step S6: again apply photoresist on substrate;
Step S7: output electrical pumping window on waveguiding structure;
Step S8: remove photoresist;
Step S9: at the back side of substrate and front growing metal electrode;
Step S10: alloying of having annealed.
15. 1 kinds of curved waveguide quantum dot super radiation light emitting tubes, comprising:
Substrate;
Be positioned at the quantum dot gain medium on substrate;
Curved waveguide structure, comprises straight part and sweep, and the curve of sweep is a polynomial part.
16. quantum dot super radiation light emitting tubes according to claim 15, is characterized in that, the formula of sweep is y=az
2.2+ bz
2.1.
17. quantum dot super radiation light emitting tubes according to claim 16, is characterized in that, the radius of curvature of sweep is gradual change.
18. quantum dot super radiation light emitting tubes according to claim 17, is characterized in that, the final deflecting angle of described waveguiding structure and the angle of exiting surface normal are 7 °, and the length of sweep is 1mm.
19. quantum dot super radiation light emitting tubes according to claim 15, is characterized in that, its epitaxial structure is followed successively by substrate, resilient coating, lower coating layer, active area, upper coating layer, ohmic contact layer.
20. quantum dot super radiation light emitting tubes according to claim 19, is characterized in that, described active area is indium arsenide/gallium arsenide quantum node structure.
The manufacture method of 21. 1 kinds of curved waveguide quantum dot super radiation light emitting tubes, comprising:
Step S1: apply one deck photoresist on epitaxial wafer;
Step S2: adopt photoetching method to etch curved waveguide structure, comprise straight part and sweep, the formula of the curve of sweep is y=az
2.2+ bz
2.1;
Step S3: adopt the method for corrosion by described waveguiding structure Graphic transitions on epitaxial wafer;
Step S4: on-chip photoresist is removed;
Step S5: grow layer of silicon dioxide insulating barrier on substrate;
Step S6: again apply photoresist on substrate;
Step S7: output electrical pumping window on described waveguiding structure;
Step S8: remove photoresist;
Step S9: at the back side of substrate and front growing metal electrode;
Step S10: alloying of having annealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410854195.6A CN104485403A (en) | 2014-12-31 | 2014-12-31 | Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410854195.6A CN104485403A (en) | 2014-12-31 | 2014-12-31 | Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104485403A true CN104485403A (en) | 2015-04-01 |
Family
ID=52759928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410854195.6A Pending CN104485403A (en) | 2014-12-31 | 2014-12-31 | Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104485403A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114094437A (en) * | 2021-11-19 | 2022-02-25 | 长春理工大学 | Single-tube front-end double-beam parallel output super-radiation light-emitting diode |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4901123A (en) * | 1987-12-02 | 1990-02-13 | Nippon Telegraph And Telephone Corporation | Superluminescent diode |
| CN101101355A (en) * | 2007-06-12 | 2008-01-09 | 浙江大学 | Wavelength dispersion device based on bent waveguide integrated grating |
| CN101197407A (en) * | 2007-12-28 | 2008-06-11 | 武汉光迅科技股份有限公司 | Super-radiation light emitting diode |
| US20090066965A1 (en) * | 2006-10-31 | 2009-03-12 | Vijaysekhar Jayaraman | High power broadband superluminescent diode |
| CN101895061A (en) * | 2010-08-03 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser realizing high-power coherent light emission by utilizing grating |
| CN102315063A (en) * | 2011-08-10 | 2012-01-11 | 电子科技大学 | Input/output structure of broadband phase shift travelling wave tube |
| CN103022897A (en) * | 2012-12-28 | 2013-04-03 | 武汉华工正源光子技术有限公司 | Super-luminescent diode and method for manufacturing same |
-
2014
- 2014-12-31 CN CN201410854195.6A patent/CN104485403A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4901123A (en) * | 1987-12-02 | 1990-02-13 | Nippon Telegraph And Telephone Corporation | Superluminescent diode |
| US20090066965A1 (en) * | 2006-10-31 | 2009-03-12 | Vijaysekhar Jayaraman | High power broadband superluminescent diode |
| CN101101355A (en) * | 2007-06-12 | 2008-01-09 | 浙江大学 | Wavelength dispersion device based on bent waveguide integrated grating |
| CN101197407A (en) * | 2007-12-28 | 2008-06-11 | 武汉光迅科技股份有限公司 | Super-radiation light emitting diode |
| CN101895061A (en) * | 2010-08-03 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser realizing high-power coherent light emission by utilizing grating |
| CN102315063A (en) * | 2011-08-10 | 2012-01-11 | 电子科技大学 | Input/output structure of broadband phase shift travelling wave tube |
| CN103022897A (en) * | 2012-12-28 | 2013-04-03 | 武汉华工正源光子技术有限公司 | Super-luminescent diode and method for manufacturing same |
Non-Patent Citations (3)
| Title |
|---|
| CHING-FUH LIN等: ""Superluminescent Diodes with Bent Waveguide"", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
| 吕雪芹 等: ""量子点超辐射发光管研究进展"", 《微纳电子技术》 * |
| 阮成礼等: "《毫米波理论与技术》", 31 March 2013 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114094437A (en) * | 2021-11-19 | 2022-02-25 | 长春理工大学 | Single-tube front-end double-beam parallel output super-radiation light-emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105098006B (en) | The preparation method and obtained light-emitting diode chip for backlight unit of a kind of super-radiance light emitting diode chip | |
| US9093818B2 (en) | Nanopillar optical resonator | |
| CN105826815B (en) | 980nm semiconductor laser structure and preparation method | |
| CN107248697A (en) | A kind of preparation method of long wavelength's InP-base DFB semiconductor laser tube core | |
| CN103474543A (en) | Light emitting diode | |
| CN103022897A (en) | Super-luminescent diode and method for manufacturing same | |
| CN103474532A (en) | Preparation method of light emitting diode | |
| CN110854673B (en) | Composite structure single longitudinal mode laser based on-chip integrated waveguide and semiconductor nanowire | |
| CN104009393A (en) | Electric pump gallium nitride micro laser capable of achieving single-direction emission and preparation method thereof | |
| CN112864803A (en) | Method for correcting oxidation aperture | |
| CN107046227B (en) | A kind of BCB buries the preparation method of high speed DFB semiconductor laser | |
| CN109449258A (en) | Super-radiance light emitting diode and photoelectric device | |
| CN104485403A (en) | Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof | |
| CN101807649A (en) | High-brightness AlGaInP-based light-emitting diode with introduced roughened layer and manufacturing method thereof | |
| CN101510667A (en) | Light-emitting vertical cavity surface emission semiconductor laser with large aperture substrate | |
| CN104465900A (en) | Structured arrangement manometer coarsened sapphire substrate and preparation method | |
| CN111785818B (en) | GaN fundamental waveguide device based on porous lower cladding layer and preparation method and application thereof | |
| CN103824920B (en) | The manufacture method of the light-emitting diode of power output and spectral shape Independent adjustable | |
| US9810931B2 (en) | Ring cavity device and its fabrication method thereof | |
| CN105742956A (en) | Mode-locked semiconductor laser with stable wavelength | |
| US11146038B2 (en) | Semiconductor laser and fabrication method thereof | |
| CN105590997B (en) | A kind of preparation method of super-radiance light emitting diode | |
| US20190148911A1 (en) | Techniques for providing curved facet semiconductor lasers | |
| CN109672088A (en) | A kind of semiconductor laser chip manufacturing method | |
| CN105655867A (en) | Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150401 |