CN114093984B - Process for improving reworking efficiency - Google Patents
Process for improving reworking efficiency Download PDFInfo
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- CN114093984B CN114093984B CN202111360971.3A CN202111360971A CN114093984B CN 114093984 B CN114093984 B CN 114093984B CN 202111360971 A CN202111360971 A CN 202111360971A CN 114093984 B CN114093984 B CN 114093984B
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000005498 polishing Methods 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 37
- 238000005406 washing Methods 0.000 claims description 79
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 74
- 239000002253 acid Substances 0.000 claims description 41
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- 239000000243 solution Substances 0.000 claims description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 19
- 239000003513 alkali Substances 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 14
- 239000003054 catalyst Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000005554 pickling Methods 0.000 claims description 8
- 239000003963 antioxidant agent Substances 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 239000002518 antifoaming agent Substances 0.000 claims description 4
- 230000003078 antioxidant effect Effects 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000031700 light absorption Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 4
- 239000003518 caustics Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000001692 EU approved anti-caking agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 defoamers Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a process for improving reworking efficiency, which comprises the following steps: and sequentially performing PSG removal treatment, polishing treatment and etching treatment on the reworked sheet. The pyramid-shaped suede on the surface of the reworked sheet is removed through the processes of PSG removal, polishing, etching, secondary suede making and the like, so that the influence of the surface velvet of the silicon wafer on the reworked sheet can be eliminated, the light absorption of the reworked sheet is improved, the Isc of the reworked sheet is increased, the conversion efficiency and the high-quality rate of the reworked sheet are improved, the conversion efficiency of the reworked sheet is improved by 0.12%, and the high-quality rate of the reworked sheet is improved by 30%.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a process for improving reworking efficiency.
Background
Along with the trend of industrialization and marketization in the photovoltaic industry, the conversion efficiency is improved, and the power of a single battery is increased, the cost is reduced, and the like, so that the method becomes a core cost reduction method of an enterprise. In order to improve the efficiency of the solar cell, the surface reflectivity can be reduced through surface texturing, the absorption of the cell to incident light can be improved, and the cell efficiency can be further improved. The conventional method for surface texturing is a chemical etching method, and is widely applied to industrial production due to low cost, simple method and high productivity. The texture surface with ideal pyramid structure can be obtained on the surface of monocrystalline silicon by a chemical etching method.
However, in the normal production process of the solar cell, some bad sheets are generated, if the bad sheets are made into the cell, the conversion efficiency is low, the appearance problem exists, the whole yield, the efficiency and the like of the production line are influenced, and the production is performed after reworking treatment.
CN107195728A discloses a method for processing reworked solar cell, which comprises the following steps: and cleaning the coating, performing thermal oxidation treatment to form an oxide layer of 10nm plus or minus 2nm, and performing wet etching and normal coating on the silicon wafer subjected to the thermal oxidation treatment. The processing method does not need a front-end coating process of the reworked sheet, reduces chromatic aberration and solves the problem of bright surface of the reworked sheet. However, the thermal oxidation treatment needs to be performed in eight steps, the operation is complicated, and the conversion efficiency is reduced after the film is coated again.
CN105304756a discloses a reworked sheet treatment process of a solar crystalline silicon cell, which comprises the following steps: and (3) carrying out high-temperature oxidation treatment on the battery reworked sheet, then putting the oxidized reworked sheet into a cleaning solution for cleaning, and carrying out spin-drying after cleaning. The processing technology is simple, the bad proportion of reworked chips is reduced, but the pyramid cannot be completely removed by the method, so that after the re-texturing, the reflectivity is increased, and the conversion efficiency is reduced.
Therefore, it is desirable to provide a process for improving reworked sheet efficiency, which is simple to operate, and can remove pyramids on the surface of reworked sheets, thereby improving conversion efficiency.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a process for improving the reworking sheet efficiency, which can effectively improve the conversion efficiency and the high-quality rate of secondary production of reworking sheets and finally reduce the overall reject ratio of battery sheets on a production line.
In order to achieve the technical effects, the invention adopts the following technical scheme:
the invention provides a process for improving reworking efficiency, which comprises the following steps: and sequentially performing PSG removal treatment, polishing treatment and etching treatment on the reworked sheet.
According to the invention, the surface defects of the reworked sheet can be removed after the PSG removal process and the polishing treatment, and then the pyramid-shaped suede is further removed by an etching device one by one, so that the smooth surface is achieved, the secondary velvet making is not affected, the light absorption of the reworked sheet can be improved, and the Isc of the reworked sheet is increased.
As a preferred technical solution of the present invention, the PSG removal process includes: and removing the oxide layer on the surface of the reworked sheet by adopting hydrofluoric acid.
Preferably, the concentration of the hydrofluoric acid is controlled using conductivity.
Preferably, the conductivity is 30-120ms/cm, for example, 30ms/cm, 40ms/cm, 50ms/cm, 60ms/cm, 70ms/cm, 80ms/cm, 90ms/cm, 100ms/cm, 110ms/cm, 120ms/cm, etc., but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
As a preferred embodiment of the present invention, the polishing process includes: and immersing the reworked sheet subjected to PSG removal treatment into a polishing solution for polishing.
Preferably, the polishing solution comprises an alkaline solution containing an additive.
Preferably, the additives include any one or a combination of at least two of surfactants, anticaking agents, defoamers, and antioxidants, typical but non-limiting examples of which are: a combination of a surfactant and an anticaking agent, a combination of an anticaking agent and a defoaming agent, or a combination of a defoaming agent and an antioxidant, etc.
In the present invention, the surfactant includes a sulfonate and/or a nonionic surfactant.
In the present invention, the anti-caking agent may be selected according to actual production conditions as long as it can satisfy the anti-caking function, and is not particularly limited herein; the defoaming agent can be selected according to actual production conditions as long as the defoaming function can be satisfied, and is not particularly limited; the antioxidant may be selected according to the actual production conditions as long as it satisfies the antioxidant function, and is not particularly limited herein.
Preferably, the alkali in the alkaline solution comprises sodium hydroxide and/or potassium hydroxide.
As a preferred embodiment of the present invention, the polishing treatment is performed under heating.
The heating temperature is preferably 64 to 70 ℃, and may be, for example, 64 ℃, 65 ℃, 66 ℃, 67 ℃, 68 ℃, 69 ℃, or 70 ℃, etc., but is not limited to the values recited, and other values not recited in the numerical range are equally applicable.
Preferably, the polishing process is performed for a period of time ranging from 210s to 270s, such as 210s, 220s, 230s, 240s, 250s, 260s, 270s, etc., but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
As a preferred embodiment of the present invention, the etching process includes setting a pressure and a gas flow rate of an etching apparatus, and etching in a chamber of the etching apparatus piece by piece.
Preferably, the pressure is 100-300mbar, which may be, for example, 100mbar, 120mbar, 140mbar, 160mbar, 180mbar, 200mbar, 220mbar, 240mbar, 260mbar, 280mbar or 300mbar, etc., but is not limited to the recited values, as are other non-recited values within the range of values.
As a preferable embodiment of the invention, the gas in the gas flow used in the etching process comprises CF 4 And O 2 。
Preferably, the CF 4 The flow rate of (C) is 1500-2500sccm, and may be, for example, 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm, 2500sccm, etc., but is not limited to the values recited, and other values not recited in the numerical range are equally applicable.
Preferably, the O 2 The flow rate of (2) is 500-1000sccm, and may be, for example, 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm, 2500sccm, etc., but not limited to the values recited, and other values not recited in the numerical range are applicable.
In the invention, the pyramid-shaped suede is further removed by an etching device piece by piece, so as to achieve a flat surface.
As a preferable technical scheme of the invention, the process further comprises the step of carrying out acid washing treatment on the reworked sheet before PSG removal treatment.
Preferably, the acid washing treatment includes: the uncoated reworked sheet is cleaned with an acid, and the coated reworked sheet is cleaned with 40-60% hydrofluoric acid, for example 40%, 42%, 44%, 46%, 48%, 50%, 52%, 54%, 56%, 58% or 60%, etc., but not limited to the values recited, other values not recited in the numerical range are equally applicable.
In the invention, the reworked piece coated with the film is cleaned by 40-60% hydrofluoric acid to remove the SIN film on the surface.
Preferably, the acid comprises 8% -9% hydrofluoric acid and/or 2% -3% hydrochloric acid, for example, may be 8% hydrofluoric acid, 8.2% hydrofluoric acid, 8.4% hydrofluoric acid, 8.6% hydrofluoric acid, 8.8% hydrofluoric acid or 9% hydrofluoric acid, etc., for example, may be 2% hydrochloric acid, 2.2% hydrochloric acid, 2.4% hydrochloric acid, 2.6% hydrochloric acid, 2.8% hydrochloric acid or 3% hydrochloric acid, etc., but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
As a preferable technical scheme of the invention, the process further comprises the step of carrying out secondary texturing on the reworked sheet after the etching treatment.
As a preferable technical scheme of the invention, the secondary texturing treatment sequentially comprises texturing, first washing, acid washing, second washing, alkali washing, third washing, mixed acid washing, fourth washing and drying.
In the invention, the texturing comprises: placing the silicon wafer in 3% sodium hydroxide and 0.6% texturing auxiliary agent, setting the temperature to be 81+/-2 ℃ and the texturing time to be 400-600s, thus forming pyramid suede.
In the present invention, the washing is performed with pure water for a washing time of 60 to 90s, for example, 60s, 65s, 70s, 75s, 80s, 85s or 90s, etc., but the present invention is not limited to the above-mentioned values, and other values not shown in the numerical range are equally applicable.
In the present invention, the acid in the acid washing includes hydrofluoric acid or hydrochloric acid.
In the present invention, the alkali in the alkali washing includes sodium hydroxide or potassium hydroxide.
In the invention, the mixed acid in the mixed acid cleaning is hydrofluoric acid and hydrochloric acid.
In the present invention, the acid washing is performed by using hydrofluoric acid or hydrochloric acid to wash the reworked sheet, and the acid washing time is 60-90s, for example, 60s, 65s, 70s, 75s, 80s, 85s or 90s, etc., but the acid washing is not limited to the listed values, and other non-listed values in the numerical range are equally applicable.
In the present invention, the alkali washing is performed by using sodium hydroxide or potassium hydroxide to wash the reworked sheet, and the alkali washing time is 60-90s, for example, 60s, 65s, 70s, 75s, 80s, 85s or 90s, etc., but the alkali washing is not limited to the listed values, and other non-listed values in the numerical range are equally applicable.
In the invention, the mixed acid cleaning adopts hydrofluoric acid and hydrochloric acid to clean the reworked sheet, the mixed acid cleaning time is 60-90s, for example, 60s, 65s, 70s, 75s, 80s, 85s or 90s and the like, but the mixed acid cleaning method is not limited to the listed numerical values, and other non-listed numerical values in the numerical range are applicable.
In the present invention, the temperature of the drying is 85 to 150 ℃, for example, 85 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃, 130 ℃, 140 ℃, 150 ℃, or the like, but the present invention is not limited to the above-mentioned values, and other values not mentioned in the numerical range are applicable.
In the present invention, the drying time is 300-600s, for example, 300s, 350s, 400s, 450s, 500s, 550s or 600s, etc., but the present invention is not limited to the recited values, and other non-recited values in the range of values are equally applicable.
As a preferable technical scheme of the invention, the process comprises the following steps:
(1) Acid washing: the non-coated reworked sheet is cleaned by acid, and the coated reworked sheet is cleaned by 40-60% hydrofluoric acid;
(2) PSG removal: removing an oxide layer on the surface of the reworked sheet after acid cleaning by adopting hydrofluoric acid;
(3) Polishing: heating the polishing solution to 64-70 ℃, immersing the reworked sheet subjected to PSG removal treatment in the polishing solution for polishing, wherein the polishing treatment time is 210-270s;
(4) Etching: setting the pressure and the gas flow of an etching device, and etching in a cavity of the etching device piece by piece;
(5) Secondary texturing: the method comprises the steps of texturing, first washing, acid washing, second washing, alkali washing, third washing, mixed acid washing, fourth washing and drying.
Compared with the prior art, the invention has the beneficial effects that:
the pyramid-shaped suede on the surface of the reworked sheet is removed through the processes of PSG, polishing, etching, re-texturing and the like, so that a flat surface is obtained, the light absorption of the reworked sheet is improved, the Isc of the reworked sheet is increased, and the conversion efficiency and the high-quality rate of the reworked sheet are improved. Compared with the conventional reworking process, the reworking sheet conversion efficiency is improved by 0.12%, and the reworking sheet quality rate is improved by 30%.
Drawings
FIG. 1 is a reworked sheet after etching treatment in example 1 of the present invention;
FIG. 2 is a reworked sheet of comparative example 4 of the present invention after polishing and pre-cleaning.
Detailed Description
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings. The following examples are merely illustrative of the present invention and are not intended to represent or limit the scope of the invention as defined in the claims.
Example 1
The embodiment provides a process for improving reworking efficiency, which comprises the following steps:
(1) Acid washing: the non-coated reworked sheet is cleaned by 8% hydrofluoric acid, and the coated reworked sheet is cleaned by 50% hydrofluoric acid;
(2) PSG removal: removing an oxide layer on the surface of the reworked sheet after acid washing by adopting hydrofluoric acid, wherein the concentration of the hydrofluoric acid is controlled by using the conductivity of 70 ms/cm;
(3) Polishing: heating the polishing solution to 67 ℃, immersing the reworked sheet subjected to PSG removal treatment in the polishing solution for polishing for 240s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and having a concentration of 4%;
(4) Etching: setting the pressure of the etching device and the gas flow rate, etching in the chamber of the etching device piece by piece, wherein the pressure is 200mbar, and the gas flow rate is CF 4 And O 2 The CF is provided with 4 The flow rate of the catalyst is 2000sccm, the O 2 The flow rate of (2) is 1000sccm;
(5) Secondary texturing: the method comprises the steps of texturing, first washing, acid washing, second washing, alkali washing, third washing, mixed acid washing, fourth washing and drying;
the silicon wafer is placed in 3 percent sodium hydroxide and 0.6 percent texturing auxiliary agent for texturing, the temperature is set to be 81 ℃, and the texturing time is 500 seconds, so that pyramid suede is formed;
the first water washing adopts pure water to wash the reworked sheet, and the first water washing time is 60s;
the pickling adopts hydrofluoric acid to clean reworked sheets, and the pickling time is 75s;
the second water washing adopts pure water to wash the reworked sheet, and the second water washing time is 60s;
the caustic washing adopts sodium hydroxide to wash reworked tablets, and the caustic washing time is 75s;
the third water washing adopts pure water to wash the reworked sheet, and the third water washing time is 75s;
the mixed acid cleaning adopts hydrofluoric acid and hydrochloric acid to clean the reworked sheet, and the mixed acid cleaning time is 75s;
the third water washing adopts pure water to wash the reworked sheet, and the fourth water washing time is 75s;
the drying temperature is 110 ℃, and the drying time is 450s.
Example 2
The embodiment provides a process for improving reworking efficiency, which comprises the following steps:
(1) Acid washing: the non-coated reworked sheet is cleaned by 3% hydrochloric acid, and the coated reworked sheet is cleaned by 60% hydrofluoric acid;
(2) PSG removal: removing an oxide layer on the surface of the reworked sheet after pickling by adopting hydrofluoric acid, wherein the concentration of the hydrofluoric acid is controlled by using the conductivity of 120 ms/cm;
(3) Polishing: heating the polishing solution to 70 ℃, immersing the reworked sheet subjected to PSG removal treatment in the polishing solution for polishing for 210s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and having a concentration of 4%;
(4) Etching: setting the pressure of the etching device and the gas flow rate, etching in the chamber of the etching device piece by piece, wherein the pressure is 100mbar, and the gas flow rate is CF 4 And O 2 The CF is provided with 4 The flow rate of the catalyst is 1500sccm, the O 2 The flow rate of (2) is 500sccm；
(5) Secondary texturing: the method comprises the steps of texturing, first washing, acid washing, second washing, alkali washing, third washing, mixed acid washing, fourth washing and drying; the secondary texturing method was the same as in example 1.
Example 3
The embodiment provides a process for improving reworking efficiency, which comprises the following steps:
(1) Acid washing: the uncoated reworked sheet is cleaned by 8% hydrofluoric acid and 3% hydrochloric acid, and the coated reworked sheet is cleaned by 40% hydrofluoric acid;
(2) PSG removal: removing an oxide layer on the surface of the reworked sheet after pickling by adopting hydrofluoric acid, wherein the concentration of the hydrofluoric acid is controlled by using the conductivity of 30 ms/cm;
(3) Polishing: heating the polishing solution to 64 ℃, immersing the reworked sheet subjected to PSG removal treatment in the polishing solution for polishing treatment for 270s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and having a concentration of 4%;
(4) Etching: setting the pressure of the etching device and the gas flow rate, etching in the chamber of the etching device piece by piece, wherein the pressure is 300mbar, and the gas flow rate is CF 4 And O 2 The CF is provided with 4 The flow rate of the catalyst is 2500sccm, the O 2 The flow rate of (2) is 1000sccm;
(5) Secondary texturing: the method comprises the steps of texturing, first washing, acid washing, second washing, alkali washing, third washing, mixed acid washing, fourth washing and drying; the secondary texturing method was the same as in example 1.
Example 4
This example differs from example 1 only in that the CF is as described in step (4) 4 The flow rate of the catalyst is 1500sccm, the O 2 The flow rate of (C) was 500sccm, and the other conditions were the same as in example 1.
Example 5
This example differs from example 1 only in that O is described in step (4) 2 The flow rate of (C) was 500sccm, and the other conditions were the same as in example 1.
Example 6
The embodiment and the embodimentExample 1 differs only in that the CF is as described in step (4) 4 The flow rate of the catalyst is 2500sccm, the O 2 The flow rate of (C) was 500sccm, and the other conditions were the same as in example 1.
Example 7
This example differs from example 1 only in that the CF is as described in step (4) 4 The flow rate of (C) was 1500sccm, and the other conditions were the same as in example 1.
Example 8
This example differs from example 1 only in that the CF is as described in step (4) 4 The flow rate of the catalyst is 2500sccm, the O 2 The flow rate of (C) was 1000sccm, and the other conditions were the same as in example 1.
Example 9
This example differs from example 1 only in that the pressure in step (4) is 100mbar, O 2 The flow rate of (C) was 500sccm, and the other conditions were the same as in example 1.
Example 10
This example differs from example 1 only in that the pressure in step (4) is 300mbar, O 2 The flow rate of (C) was 500sccm, and the other conditions were the same as in example 1.
Comparative example 1
This comparative example provides a process for improving reworking efficiency, and differs from example 1 only in that the process is identical to example 1 except that step (2) is not performed.
Comparative example 2
This comparative example provides a process for improving reworking efficiency, and differs from example 1 only in that the conditions are the same as example 1 except that step (3) is not performed.
Comparative example 3
This comparative example provides a process for improving the efficiency of reworking a sheet, and differs from example 1 only in that the process is identical to example 1 except that step (4) is not performed.
Comparative example 4
This comparative example provides a process for improving rework sheet efficiency, the process comprising the steps of:
(1) Acid washing: the non-coated reworked sheet is cleaned by 8% hydrofluoric acid, and the coated reworked sheet is cleaned by 50% hydrofluoric acid;
(2) Polishing: heating the polishing solution to 67 ℃, immersing the reworked sheet after pickling in the polishing solution for polishing for 240s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and having the concentration of 4%;
(3) Pre-cleaning: cleaning the reworked sheet by using a mixed solution containing potassium hydroxide and hydrogen peroxide;
(4) Secondary texturing: wool making, alkali washing, acid washing, water washing and drying;
the silicon wafer is placed in 3 percent sodium hydroxide and 0.6 percent texturing auxiliary agent for texturing, the temperature is set to be 81 ℃, and the texturing time is 500 seconds, so that pyramid suede is formed;
the caustic washing adopts sodium hydroxide to wash reworked tablets, and the caustic washing time is 75s;
the pickling adopts hydrofluoric acid to clean reworked sheets, and the pickling time is 75s;
the water washing adopts pure water to wash the reworked sheet, and the water washing time is 60s;
the drying temperature is 110 ℃, and the drying time is 450s.
The reworked sheets obtained in examples 1 to 10 and comparative examples 1 to 4 were subjected to electrical property test. The electrical performance test method is to use an I-V test method (a halm tester).
TABLE 1
As can be seen from Table 1, the CF used for the etching treatment 4 And O 2 With O 2 The content is increased, and the etching effect is better; the reworked sheet (shown in figure 1) treated by the reworked sheet treatment process provided by the invention has various indexes superior to those of the conventional reworked sheetReworked sheets (shown in figure 2) obtained by the treatment methods of acid washing, polishing, pre-cleaning and secondary texturing in the process. The reworked sheet treatment process reduces reworking treatment cost, improves the quality of reworked sheets, and improves the conversion efficiency of reworked sheets by 0.12%.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (7)
1. A process for improving reworking efficiency, the process comprising the steps of:
(1) Acid washing: the non-coated reworked sheet is cleaned by acid, and the coated reworked sheet is cleaned by 40-60% hydrofluoric acid;
(2) PSG removal: removing an oxide layer on the surface of the reworked sheet after pickling by adopting hydrofluoric acid;
(3) Polishing: heating the polishing solution to 64-70 ℃, immersing the reworked sheet subjected to PSG removal treatment in the polishing solution for polishing, wherein the polishing treatment time is 210-270s;
(4) Etching: the etching treatment comprises the steps of setting the pressure and the gas flow of an etching device, and etching in a cavity of the etching device piece by piece;
the pressure is 100-300mbar;
the gas in the gas flow used in the etching treatment comprises CF 4 And O 2 The method comprises the steps of carrying out a first treatment on the surface of the The CF is provided with 4 The flow rate of the catalyst is 1500-2500sccm; the O is 2 The flow rate of the catalyst is 500-1000sccm;
(5) Secondary texturing: the method comprises the steps of texturing, first washing, acid washing, second washing, alkali washing, third washing, mixed acid washing, fourth washing and drying.
2. The process of claim 1, wherein the concentration of hydrofluoric acid in step (2) is controlled using conductivity.
3. The process according to claim 2, characterized in that the electrical conductivity is 30-120ms/cm.
4. The process of claim 1, wherein the polishing solution of step (3) is an alkaline solution containing an additive.
5. The process of claim 4, wherein the additive comprises any one or a combination of at least two of a surfactant, an anticaking agent, an antifoaming agent, and an antioxidant.
6. The process of claim 4, wherein the alkali in the alkaline solution comprises sodium hydroxide and/or potassium hydroxide.
7. The process according to claim 1, wherein the acid of step (1) comprises 8% -9% hydrofluoric acid and/or 2% -3% hydrochloric acid.
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| CN104362221A (en) * | 2014-11-27 | 2015-02-18 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing polycrystalline silicon solar cell by RIE texturing |
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| CN107516693A (en) * | 2017-07-18 | 2017-12-26 | 广东爱康太阳能科技有限公司 | A kind of processing method of crystal silicon solar batteries polished silicon wafer |
| CN113421946A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Rework process of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104362221A (en) * | 2014-11-27 | 2015-02-18 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing polycrystalline silicon solar cell by RIE texturing |
| CN104979410A (en) * | 2015-05-15 | 2015-10-14 | 欧贝黎新能源科技股份有限公司 | Single-crystal silicon wafer maskless reactive ion etching suede preparation method |
| CN107516693A (en) * | 2017-07-18 | 2017-12-26 | 广东爱康太阳能科技有限公司 | A kind of processing method of crystal silicon solar batteries polished silicon wafer |
| CN113421946A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Rework process of solar cell |
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