CN114093984A - Process for improving reworking efficiency - Google Patents
Process for improving reworking efficiency Download PDFInfo
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- CN114093984A CN114093984A CN202111360971.3A CN202111360971A CN114093984A CN 114093984 A CN114093984 A CN 114093984A CN 202111360971 A CN202111360971 A CN 202111360971A CN 114093984 A CN114093984 A CN 114093984A
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000005498 polishing Methods 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 44
- 238000005406 washing Methods 0.000 claims description 80
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 78
- 239000002253 acid Substances 0.000 claims description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 238000004140 cleaning Methods 0.000 claims description 36
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 33
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 25
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 19
- 239000003513 alkali Substances 0.000 claims description 19
- 238000001035 drying Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000003963 antioxidant agent Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 230000003078 antioxidant effect Effects 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 210000002268 wool Anatomy 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims 1
- 239000013530 defoamer Substances 0.000 claims 1
- 238000005554 pickling Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000031700 light absorption Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 4
- 239000002518 antifoaming agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 239000001692 EU approved anti-caking agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- ing And Chemical Polishing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a process for improving the efficiency of reworked sheets, which comprises the following steps: and sequentially carrying out PSG removing treatment, polishing treatment and etching treatment on the reworked wafer. The invention removes the pyramid suede on the surface of the reworked sheet by the processes of PSG, polishing, etching, secondary suede making and the like, can eliminate the influence of the suede on the surface of a silicon wafer on the process of making suede again, improves the light absorption of the reworked sheet, and increases the Isc of the reworked sheet, thereby improving the conversion efficiency and the high quality rate of the reworked sheet, improving the conversion efficiency of the reworked sheet by 0.12 percent, and improving the high quality rate of the reworked sheet by 30 percent.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a process for improving the efficiency of reworked sheets.
Background
With the trend of industrialization and marketization of the photovoltaic industry, the conversion efficiency is improved, the power of a single battery is increased, the cost is reduced, and the like, which become the core reduction method of enterprises. In order to improve the efficiency of the solar cell, the surface reflectivity can be reduced by surface texturing, the absorption of the cell to incident light is improved, and the cell efficiency is further improved. The current common method for surface texturing is chemical etching, which is widely used in industrial production due to its low cost, simple process and high productivity. The texture with an ideal pyramid structure can be obtained on the surface of the monocrystalline silicon by a chemical etching method.
However, in the normal production process of solar cells, some defective sheets are generated, if such defective sheets are made into cells, the conversion efficiency is low, appearance problems exist, the overall yield, efficiency and the like of a production line are affected, and the cells are required to be reworked and then produced.
CN107195728A discloses a processing method of solar cell reworked sheets, which comprises the following steps: cleaning the coating film, then carrying out thermal oxidation treatment to form an oxide layer of 10nm +/-2 nm, and carrying out wet etching process and normal coating process coating film on the silicon wafer after the thermal oxidation treatment. The processing method does not need a pre-coating process of the reworked sheet, reduces chromatic aberration, and solves the problem of bright surface of the reworked sheet. However, the thermal oxidation treatment needs to be carried out in eight steps, the operation is complicated, and the conversion efficiency is reduced after the film is coated again.
CN105304756A discloses a reworked piece processing technology of a solar crystalline silicon cell, which comprises the following steps: and (3) carrying out high-temperature oxidation treatment on the battery reworking piece, then putting the reworking piece subjected to oxidation treatment into cleaning solution for cleaning, and carrying out spin-drying after cleaning. The processing technology is simple, the bad processing proportion of reworked sheets is reduced, but the method cannot completely remove pyramids, so that after the texture is made again, the reflectivity is increased, and the conversion efficiency is reduced.
Therefore, it is desirable to provide a process for improving the efficiency of rework sheets, which is simple to operate, and can remove pyramids on the surface of the rework sheets to improve the conversion efficiency.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a process for improving the efficiency of reworked sheets, which can effectively improve the conversion efficiency and the quality rate of secondary production of the reworked sheets and finally reduce the overall fraction defective of the battery sheets on a production line.
In order to achieve the technical effect, the invention adopts the following technical scheme:
the invention provides a process for improving the efficiency of reworked sheets, which comprises the following steps: and sequentially carrying out PSG removing treatment, polishing treatment and etching treatment on the reworked wafer.
In the invention, the poor surface of the reworked sheet can be removed after PSG removing process and polishing treatment, and the pyramid-shaped suede is further removed by an etching device piece by piece, so that the smooth surface is achieved, secondary texturing cannot be influenced, the light absorption of the reworked sheet can be improved, and the Isc of the reworked sheet is increased.
As a preferred technical solution of the present invention, the PSG removal process includes: and removing the oxide layer on the surface of the reworked sheet by adopting hydrofluoric acid.
Preferably, the concentration of the hydrofluoric acid is controlled using electrical conductivity.
Preferably, the conductivity is 30 to 120ms/cm, and may be, for example, 30ms/cm, 40ms/cm, 50ms/cm, 60ms/cm, 70ms/cm, 80ms/cm, 90ms/cm, 100ms/cm, 110ms/cm or 120ms/cm, etc., but is not limited to the values recited, and other values not recited within the range of values are equally applicable.
As a preferable embodiment of the present invention, the polishing process includes: and immersing the reworked wafer subjected to the PSG removing treatment into a polishing solution for polishing.
Preferably, the polishing solution comprises an alkaline solution containing an additive.
Preferably, the additives include any one or a combination of at least two of surfactants, anti-caking agents, anti-foaming agents and antioxidants, typical but non-limiting examples of which are: a combination of a surfactant and an anticaking agent, a combination of an anticaking agent and an antifoaming agent, or a combination of an antifoaming agent and an antioxidant, and the like.
In the present invention, the surfactant includes a sulfonate and/or a nonionic surfactant.
In the invention, the anticaking agent can be selected according to the actual production condition as long as the anticaking agent can meet the function of preventing caking, and is not specifically limited herein; the defoaming agent can be selected according to the actual production condition as long as the defoaming function can be met, and is not specifically limited herein; the antioxidant may be selected according to actual production conditions as long as it can satisfy the antioxidant function, and is not specifically limited herein.
Preferably, the alkali in the alkali solution comprises sodium hydroxide and/or potassium hydroxide.
As a preferable embodiment of the present invention, the polishing treatment is carried out under heating.
Preferably, the heating temperature is 64-70 deg.C, such as 64 deg.C, 65 deg.C, 66 deg.C, 67 deg.C, 68 deg.C, 69 deg.C or 70 deg.C, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the polishing time is 210 s-270 s, such as 210s, 220s, 230s, 240s, 250s, 260s, 270s, etc., but not limited to the recited values, and other values not recited in the range of values are also applicable.
As a preferred embodiment of the present invention, the etching process includes setting a pressure and a gas flow rate of an etching apparatus, and etching the wafer by wafer in a chamber of the etching apparatus.
Preferably, the pressure is 100-300mbar, such as 100mbar, 120mbar, 140mbar, 160mbar, 180mbar, 200mbar, 220mbar, 240mbar, 260mbar, 280mbar or 300mbar, etc., but is not limited to the recited values, and other values not recited within the numerical ranges are equally applicable.
In a preferred embodiment of the present invention, the gas in the gas flow rate used in the etching process includes CF4And O2。
Preferably, the CF4The flow rate of the gas flow rate is 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm, 2500sccm, etc., but the flow rate is not limited to the above-mentioned values, and other values not listed in the above-mentioned value range are also applicable.
Preferably, said O is2The flow rate of (1) is 500-1000sccm, for example1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm, 2500sccm, etc., but are not limited to the values recited and other values not recited within the range of values are equally applicable.
In the invention, the pyramid-shaped suede is further removed piece by piece through an etching device, and the aim is to achieve a flat surface.
As a preferable technical scheme of the invention, the process further comprises the step of carrying out acid cleaning treatment on the reworked sheet before PSG removing treatment.
Preferably, the acid washing treatment comprises: the uncoated rework sheet is cleaned with acid, and the coated rework sheet is cleaned with 40-60% hydrofluoric acid, for example, 40%, 42%, 44%, 46%, 48%, 50%, 52%, 54%, 56%, 58%, or 60%, etc., but not limited to the values listed, and other values not listed in the numerical range are also applicable.
In the invention, the reworked piece of the coated film is cleaned by 40-60% hydrofluoric acid to remove the SIN film on the surface.
Preferably, the acid comprises 8% to 9% hydrofluoric acid and/or 2% to 3% hydrochloric acid, and may be, for example, 8% hydrofluoric acid, 8.2% hydrofluoric acid, 8.4% hydrofluoric acid, 8.6% hydrofluoric acid, 8.8% hydrofluoric acid, 9% hydrofluoric acid, etc., and may be, for example, 2% hydrochloric acid, 2.2% hydrochloric acid, 2.4% hydrochloric acid, 2.6% hydrochloric acid, 2.8% hydrochloric acid, 3% hydrochloric acid, etc., but is not limited to the recited values, and other values within the range of values are equally applicable.
As a preferable technical solution of the present invention, the process further includes performing a secondary texturing process on the rework sheet after the etching process.
As a preferable technical scheme of the invention, the secondary texturing treatment sequentially comprises texturing, first water washing, acid washing, second water washing, alkali washing, third water washing, mixed acid washing, fourth water washing and drying.
In the present invention, the texturing includes: and (3) placing the silicon wafer in 3% of sodium hydroxide and 0.6% of texture-making auxiliary agent, setting the temperature to be 81 +/-2 ℃, and setting the texture-making time to be 400-plus-600 s to form the pyramid texture surface.
In the present invention, the washing is performed for washing the rework sheet with pure water for 60 to 90 seconds, for example, 60 seconds, 65 seconds, 70 seconds, 75 seconds, 80 seconds, 85 seconds, or 90 seconds, but not limited to the values listed, and other values not listed in the numerical range are also applicable.
In the present invention, the acid in the acid washing includes hydrofluoric acid or hydrochloric acid.
In the invention, the alkali in the alkali washing comprises sodium hydroxide or potassium hydroxide.
In the invention, the mixed acid in the mixed acid cleaning is hydrofluoric acid and hydrochloric acid.
In the present invention, the reworked sheet is cleaned by hydrofluoric acid or hydrochloric acid for 60 to 90 seconds, for example, 60 seconds, 65 seconds, 70 seconds, 75 seconds, 80 seconds, 85 seconds, or 90 seconds, but not limited to the values listed, and other values not listed in the range of values are also applicable.
In the present invention, the rework sheet is washed with sodium hydroxide or potassium hydroxide, and the alkali washing time is 60 to 90s, for example, 60s, 65s, 70s, 75s, 80s, 85s, or 90s, but not limited to the above-mentioned values, and other values not listed in the range of values are also applicable.
In the present invention, the reworked wafer is cleaned by hydrofluoric acid and hydrochloric acid, and the mixed acid cleaning time is 60-90s, for example, 60s, 65s, 70s, 75s, 80s, 85s, or 90s, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
In the present invention, the temperature of the drying is 85 to 150 ℃, for example, 85 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃, 130 ℃, 140 ℃ or 150 ℃, but not limited to the recited values, and other values not recited in the numerical range are also applicable.
In the present invention, the drying time is 300-600s, for example, 300s, 350s, 400s, 450s, 500s, 550s or 600s, etc., but the present invention is not limited to the recited values, and other values not recited in the numerical range are also applicable.
As a preferable technical scheme of the invention, the process comprises the following steps:
(1) acid washing: cleaning the non-coated reworked piece with acid, and cleaning the coated reworked piece with 40-60% hydrofluoric acid;
(2) removing PSG: removing an oxide layer on the surface of the reworked sheet after acid cleaning by adopting hydrofluoric acid;
(3) polishing: heating the polishing solution to 64-70 ℃, immersing the reworked wafer subjected to the PSG removal treatment into the polishing solution for polishing, wherein the polishing treatment time is 210-270 s;
(4) etching: setting the pressure and the gas flow of an etching device, and etching in a chamber of the etching equipment piece by piece;
(5) secondary texturing: the method comprises the following steps of wool making, first water washing, acid washing, second water washing, alkali washing, third water washing, mixed acid washing, fourth water washing and drying.
Compared with the prior art, the invention has the beneficial effects that:
the invention removes the pyramid suede on the surface of the reworked sheet by the processes of PSG removal, polishing, etching, re-texturing and the like to obtain a flat surface, improves the light absorption of the reworked sheet, increases the Isc of the reworked sheet, and thus improves the conversion efficiency and the high quality rate of the reworked sheet. Compared with the conventional reworking process, the conversion efficiency of the reworked sheet is improved by 0.12%, and the high quality rate of the reworked sheet is improved by 30%.
Drawings
FIG. 1 is a diagram of a rework wafer after being subjected to etching treatment in example 1 of the present invention;
FIG. 2 is a drawing of a rework wafer of comparative example 4 of the present invention after polishing and precleaning.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
Example 1
The embodiment provides a process for improving the efficiency of reworked sheets, which comprises the following steps:
(1) acid washing: cleaning the non-coated reworked piece by using 8% hydrofluoric acid, and cleaning the coated reworked piece by using 50% hydrofluoric acid;
(2) removing PSG: removing an oxide layer on the surface of the reworked wafer after the acid cleaning by adopting hydrofluoric acid, wherein the concentration of the hydrofluoric acid is controlled by the conductivity of 70 ms/cm;
(3) polishing: heating the polishing solution to 67 ℃, immersing the reworked sheet subjected to PSG removal treatment into the polishing solution for polishing for 240s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and 4% of concentration;
(4) etching: setting the pressure and the gas flow of an etching device, etching in a chamber of the etching equipment piece by piece, wherein the pressure is 200mbar, and the gas flow is CF4And O2Said CF4At a flow rate of 2000sccm, said O2The flow rate of (2) is 1000 sccm;
(5) secondary texturing: the method comprises the following steps of texturing, first water washing, acid washing, second water washing, alkali washing, third water washing, mixed acid washing, fourth water washing and drying;
the texturing is to place the silicon wafer in a texturing auxiliary agent of 3 percent of sodium hydroxide and 0.6 percent of sodium hydroxide, the temperature is set to be 81 ℃, the texturing time is 500s, and a pyramid textured surface is formed;
the first washing adopts pure water to wash the reworked sheet, and the first washing time is 60 s;
the acid cleaning adopts hydrofluoric acid to clean reworked sheets, and the acid cleaning time is 75 s;
the second washing adopts pure water to wash the reworked sheet, and the second washing time is 60 s;
the alkali washing adopts sodium hydroxide to clean the rework sheet, and the alkali washing time is 75 s;
the third washing adopts pure water to wash the reworked wafer, and the third washing time is 75 s;
cleaning reworked sheets by using hydrofluoric acid and hydrochloric acid in mixed acid cleaning for 75 s;
the third washing adopts pure water to wash the reworked wafer, and the fourth washing time is 75 s;
the drying temperature is 110 ℃, and the drying time is 450 s.
Example 2
The embodiment provides a process for improving the efficiency of reworked sheets, which comprises the following steps:
(1) acid washing: cleaning the non-coated reworked piece by using 3% hydrochloric acid, and cleaning the coated reworked piece by using 60% hydrofluoric acid;
(2) removing PSG: removing an oxide layer on the surface of the reworked wafer after the acid cleaning by adopting hydrofluoric acid, wherein the concentration of the hydrofluoric acid is controlled by the conductivity of 120 ms/cm;
(3) polishing: heating the polishing solution to 70 ℃, immersing the reworked sheet subjected to PSG removal treatment into the polishing solution for polishing for 210s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and 4% of concentration;
(4) etching: setting the pressure and the gas flow of an etching device, etching in a chamber of the etching equipment piece by piece, wherein the pressure is 100mbar, and the gas flow is CF4And O2Said CF4At a flow rate of 1500sccm, said O2The flow rate of (2) is 500 sccm;
(5) secondary texturing: the method comprises the following steps of texturing, first water washing, acid washing, second water washing, alkali washing, third water washing, mixed acid washing, fourth water washing and drying; the secondary texturing method is the same as in example 1.
Example 3
The embodiment provides a process for improving the efficiency of reworked sheets, which comprises the following steps:
(1) acid washing: cleaning the non-coated reworked piece by using 8% hydrofluoric acid and 3% hydrochloric acid, and cleaning the coated reworked piece by using 40% hydrofluoric acid;
(2) removing PSG: removing an oxide layer on the surface of the reworked wafer after the acid cleaning by adopting hydrofluoric acid, wherein the concentration of the hydrofluoric acid is controlled by the conductivity of 30 ms/cm;
(3) polishing: heating the polishing solution to 64 ℃, immersing the reworked sheet subjected to PSG removal treatment into the polishing solution for polishing for 270s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and 4% of concentration;
(4) etching: setting the pressure and gas flow of an etching device, and etching in a chamber of the etching equipment piece by piece, wherein the etching equipment comprises a plurality of etching devices, a plurality of etching devices and a plurality of control devices, wherein the control devices are connected with the etching devices, and the control devices are connected with the etching devicesThe pressure is 300mbar and the gas flow is CF4And O2Said CF4At a flow rate of 2500sccm, O2The flow rate of (2) is 1000 sccm;
(5) secondary texturing: the method comprises the following steps of texturing, first water washing, acid washing, second water washing, alkali washing, third water washing, mixed acid washing, fourth water washing and drying; the secondary texturing method is the same as in example 1.
Example 4
This example differs from example 1 only in that CF is described in step (4)4At a flow rate of 1500sccm, said O2The flow rate of (2) was 500sccm, and the other conditions were the same as in example 1.
Example 5
This example differs from example 1 only in that O is described in step (4)2The flow rate of (2) was 500sccm, and the other conditions were the same as in example 1.
Example 6
This example differs from example 1 only in that CF is described in step (4)4At a flow rate of 2500sccm, O2The flow rate of (2) was 500sccm, and the other conditions were the same as in example 1.
Example 7
This example differs from example 1 only in that CF is described in step (4)4The flow rate of (2) was 1500sccm, and the other conditions were the same as in example 1.
Example 8
This example differs from example 1 only in that CF is described in step (4)4At a flow rate of 2500sccm, O2The flow rate of (2) was 1000sccm, and the other conditions were the same as in example 1.
Example 9
This example differs from example 1 only in that in step (4) the pressure is 100mbar and the O is2The flow rate of (2) was 500sccm, and the other conditions were the same as in example 1.
Example 10
This example differs from example 1 only in that in step (4) the pressure is 300mbar and the O is2The flow rate of (2) was 500sccm, and the other conditions were the same as in example 1The same is true.
Comparative example 1
This comparative example, which provides a process for improving the efficiency of rework sheets, differs from example 1 only in that the conditions are the same as example 1 except that step (2) is not performed.
Comparative example 2
This comparative example, which provides a process for improving the efficiency of rework sheets, differs from example 1 only in that the conditions are the same as example 1 except that step (3) is not performed.
Comparative example 3
This comparative example, which provides a process for improving the efficiency of rework sheets, differs from example 1 only in that the conditions are the same as example 1 except that step (4) is not performed.
Comparative example 4
This comparative example provides a process for improving rework wafer efficiency, the process comprising the steps of:
(1) acid washing: cleaning the non-coated reworked piece by using 8% hydrofluoric acid, and cleaning the coated reworked piece by using 50% hydrofluoric acid;
(2) polishing: heating the polishing solution to 67 ℃, immersing the reworked sheet after acid cleaning into the polishing solution for polishing for 240s, wherein the polishing solution is a potassium hydroxide solution containing sodium dodecyl sulfate and 4% of concentration;
(3) pre-cleaning: cleaning the rework sheet by using a mixed solution containing potassium hydroxide and hydrogen peroxide;
(4) secondary texturing: texturing, alkali washing, acid washing, water washing and drying;
the texturing is to place the silicon wafer in a texturing auxiliary agent of 3 percent of sodium hydroxide and 0.6 percent of sodium hydroxide, the temperature is set to be 81 ℃, the texturing time is 500s, and a pyramid textured surface is formed;
the alkali washing adopts sodium hydroxide to clean the rework sheet, and the alkali washing time is 75 s;
the acid cleaning adopts hydrofluoric acid to clean reworked sheets, and the acid cleaning time is 75 s;
the water washing adopts pure water to wash the reworked sheet, and the water washing time is 60 s;
the drying temperature is 110 ℃, and the drying time is 450 s.
The reworked sheets obtained in examples 1 to 10 and comparative examples 1 to 4 were subjected to electrical property tests. The electrical property test method adopts an I-V test method (a palm test machine).
TABLE 1
As can be seen from Table 1, the etch process used CF4And O2With O2The content is increased, and the etching effect is better; the reworked sheet (shown in figure 1) treated by the reworked sheet treatment process provided by the invention has various indexes superior to those of a reworked sheet (shown in figure 2) obtained by a treatment method of acid washing, polishing, pre-cleaning and secondary texturing in the conventional reworking process. The reworked sheet processing technology reduces the reworking processing cost, improves the quality of the reworked sheet and improves the conversion efficiency of the reworked sheet by 0.12 percent.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. A process for improving rework wafer efficiency, the process comprising the steps of: and sequentially carrying out PSG removing treatment, polishing treatment and etching treatment on the reworked wafer.
2. The process of claim 1, wherein the PSG removal process comprises: removing the oxide layer on the surface of the reworked sheet by adopting hydrofluoric acid;
preferably, the concentration of the hydrofluoric acid is controlled by using conductivity;
preferably, the conductivity is 30 to 120 ms/cm.
3. The process according to claim 1 or 2, wherein the polishing treatment comprises: immersing the reworked sheet subjected to PSG removal treatment into a polishing solution for polishing;
preferably, the polishing solution is an alkaline solution containing an additive;
preferably, the additive comprises any one or at least two of a surfactant, an anticaking agent, a defoamer and an antioxidant in combination;
preferably, the alkali in the alkali solution comprises sodium hydroxide and/or potassium hydroxide.
4. The process according to any one of claims 1 to 3, wherein the polishing treatment is carried out under heating;
preferably, the heating temperature is 64-70 ℃;
preferably, the polishing treatment time is 210-.
5. The process according to any one of claims 1 to 4, wherein the etching treatment comprises setting the pressure and gas flow rate of an etching device to etch piece by piece in a chamber of the etching apparatus;
preferably, the pressure is 100-.
6. The process of claim 5, wherein the etching process uses a gas in the gas flow comprising CF4And O2；
Preferably, the CF4The flow rate of the catalyst is 1500-;
preferably, said O is2The flow rate of (1) is 500-1000 sccm.
7. The process of claim 6, further comprising pickling the rework wafer prior to the PSG removal process;
preferably, the acid washing treatment comprises: cleaning the non-coated reworked piece with acid, and cleaning the coated reworked piece with 40-60% hydrofluoric acid;
preferably, the acid comprises 8% -9% hydrofluoric acid and/or 2% -3% hydrochloric acid.
8. The process of any one of claims 1-7, further comprising subjecting the etched rework wafer to a secondary texturing process.
9. The process as claimed in claim 8, wherein the secondary texturing treatment comprises texturing, first water washing, acid washing, second water washing, alkali washing, third water washing, mixed acid washing, fourth water washing and drying in sequence.
10. Process according to any one of claims 1 to 9, characterized in that it comprises the following steps:
(1) acid washing: cleaning the non-coated reworked piece with acid, and cleaning the coated reworked piece with 40-60% hydrofluoric acid;
(2) removing PSG: removing an oxide layer on the surface of the reworked wafer after the acid cleaning by adopting hydrofluoric acid;
(3) polishing: heating the polishing solution to 64-70 ℃, immersing the reworked wafer subjected to the PSG removal treatment into the polishing solution for polishing, wherein the polishing treatment time is 210-270 s;
(4) etching: setting the pressure and the gas flow of an etching device, and etching in a chamber of the etching equipment piece by piece;
(5) secondary texturing: the method comprises the following steps of wool making, first water washing, acid washing, second water washing, alkali washing, third water washing, mixed acid washing, fourth water washing and drying.
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| CN104362221A (en) * | 2014-11-27 | 2015-02-18 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing polycrystalline silicon solar cell by RIE texturing |
| CN104979410A (en) * | 2015-05-15 | 2015-10-14 | 欧贝黎新能源科技股份有限公司 | Single-crystal silicon wafer maskless reactive ion etching suede preparation method |
| CN107516693A (en) * | 2017-07-18 | 2017-12-26 | 广东爱康太阳能科技有限公司 | A kind of processing method of crystal silicon solar batteries polished silicon wafer |
| CN113421946A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Rework process of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104362221A (en) * | 2014-11-27 | 2015-02-18 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing polycrystalline silicon solar cell by RIE texturing |
| CN104979410A (en) * | 2015-05-15 | 2015-10-14 | 欧贝黎新能源科技股份有限公司 | Single-crystal silicon wafer maskless reactive ion etching suede preparation method |
| CN107516693A (en) * | 2017-07-18 | 2017-12-26 | 广东爱康太阳能科技有限公司 | A kind of processing method of crystal silicon solar batteries polished silicon wafer |
| CN113421946A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Rework process of solar cell |
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Denomination of invention: A Process for Improving the Efficiency of Reworked Sheets Effective date of registration: 20231102 Granted publication date: 20230721 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2023980063485 |