CN114093972A - Thermophotovoltaic system with back reflector and preparation method thereof - Google Patents
Thermophotovoltaic system with back reflector and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000005855 radiation Effects 0.000 claims abstract description 20
- 230000017525 heat dissipation Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 238000005289 physical deposition Methods 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000012774 insulation material Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000001228 spectrum Methods 0.000 abstract description 4
- 238000010248 power generation Methods 0.000 description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000000313 electron-beam-induced deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000005457 Black-body radiation Effects 0.000 description 3
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
- H01L31/0525—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a thermophotovoltaic system with a back reflector and a preparation method thereof, and the thermophotovoltaic system provided by the invention comprises the following components: photovoltaic cells as radiation receivers and photoelectric converters; a heat dissipating fin; and a back reflector disposed therebetween; the back reflector includes a metal substrate and a metal film deposited on the metal substrate. Aiming at the problem of low thermoelectric conversion efficiency caused by mismatching of the heat source radiation energy and the photovoltaic cell forbidden band width in the traditional thermophotovoltaic cell, the invention is provided with the infrared band back reflector, the heat radiation energy which is not utilized by the cell is reflected back to the radiation source, and the forbidden band matching of the spectrum is realized by increasing the temperature of the heat radiation source and the re-radiation of the energy. The back reflector also reduces the energy transferred to the heat dissipation system connected to the back of the battery, thereby reducing the heat loss of the entire system and improving the system efficiency.
Description
Technical Field
The invention relates to the technical field of thermophotovoltaic power generation, in particular to a thermophotovoltaic system with a back reflector and a preparation method thereof.
Background
The photovoltaic power generation technology is a clean energy power generation technology with extremely wide application prospect at present and in the future, however, the photovoltaic power generation and the stability of the photovoltaic power generation technology depending on solar energy are limited by natural conditions such as geographical position, altitude, weather conditions and the like, and the application of the photovoltaic power generation technology has inevitable limitation. The thermal photovoltaic power generation technology is a technology for converting energy into electric energy through a thermal photovoltaic cell based on radiation energy of a radiation heat source on the basis of photovoltaic power generation. The thermophotovoltaic power generation technology has the advantages that the dependence of photovoltaic cells on solar energy can be eliminated by using combustion or isotope sources and the like, the energy flux density is high, the types of heat sources are rich and the like, and compared with the traditional power generation method, the thermophotovoltaic power generation method has no movable parts, the system reliability is higher, stable power can be provided in extreme environments such as deep space and deep sea, and the thermophotovoltaic power generation method has important application value in related fields. The concept of "thermophotovoltaic" was first proposed in the united states in 1965, and thermophotovoltaic power generation systems were used in many deep space exploration programs beginning to date in the lunar-lunar project in 1969. The thermophotovoltaic power generation system adopting the isotope heat source can stably provide electric power energy for decades at the longest and has extremely high application value.
However, the conventional thermophotovoltaic power generation system has a major drawback of low energy conversion efficiency. This is mainly because the heat source in a thermophotovoltaic system is usually not at high temperature compared to a solar heat source, and according to the blackbody radiation wien's law, the thermal radiation energy emitted from the heat source has a long wavelength and a low photon energy, and the battery cannot utilize all the thermal radiation energy under the condition that the band gap of the photovoltaic battery is constant, thereby causing energy loss. In the traditional technology, energy conversion is mainly carried out by increasing the temperature of a heat source or utilizing a narrow-gap photovoltaic cell. However, if the temperature of the heat source is increased to increase the photon energy, an excessively high temperature may cause adverse effects such as a decrease in durability of the components, a decrease in stability of the system, and the like. For example, the silicon cell has a forbidden band width of about Eg 1.12eV, and according to wien's law, the radiation heat source needs to reach 2634K to optimally match the forbidden band width of the silicon cell, and it is difficult for the radiator to reach this temperature. The narrow bandgap solar cell has high preparation difficulty and low stability.
Disclosure of Invention
The invention aims to solve the problems of low energy conversion efficiency and heat loss caused by energy transmission to the outside of a system due to mismatch of absorption band gaps of batteries in the prior art.
To achieve the above object, the present invention provides a thermophotovoltaic system with a back reflector, comprising:
photovoltaic cells as radiation receivers and photoelectric converters;
a heat dissipating fin; and
a back reflector disposed therebetween; the back reflector includes a metal substrate and a metal film deposited on the metal substrate.
Optionally, a microstructure is arranged on the metal film; the microstructure comprises a groove and a bulge, wherein the bulge is any one or more of a straight line shape, a broken line shape, a wave shape or a salient point.
Optionally, the metal substrate is an aluminum substrate, and the metal thin film is any one of gold, silver, platinum, and iridium.
Optionally, the method further comprises:
a heat radiator disposed on the photovoltaic cell;
a heat source; and
and the heat insulation material is arranged on the outer side of the thermal photovoltaic system.
The invention also provides a preparation method of the thermophotovoltaic system with the back reflector, which is used for preparing the thermophotovoltaic system and comprises the following steps:
providing a metal substrate, and preparing the metal film on the metal substrate to obtain the back reflector;
step two, providing a photovoltaic cell, wherein one surface of the back reflector is tightly pressed on the back surface of the photovoltaic cell;
and step three, arranging a heat dissipation fin on the other surface of the back reflector.
Optionally, the metal film is prepared by a physical deposition method, wherein the physical deposition method is any one of magnetron sputtering, pulsed laser deposition, vacuum thermal evaporation, chemical vapor deposition, ion deposition or high-temperature pyrolysis spraying.
Optionally, the physical deposition method is magnetron sputtering, the sputtering power is 150-200w, the deposition temperature is 350-450 ℃, the oxygen flow is 10-15sccm, and the backing vacuum is less than 10-5 Torr.
Optionally, the first step further comprises:
etching a microstructure on the metal film, wherein the microstructure comprises a groove and a bulge;
the method for etching the microstructure is any one of plasma etching, ultraviolet light etching, electron beam etching or chemical corrosion etching.
Optionally, in the second step, the back reflector is pressed against the back surface of the photovoltaic cell by a pressure device at a temperature of 800-.
Optionally, the method further comprises:
and step four, providing a heat radiator and a heat source which are arranged on the photovoltaic cell, and providing a heat-insulating material which is arranged outside the photovoltaic system.
The invention has the beneficial effects that:
aiming at the problem of low thermoelectric conversion efficiency caused by mismatching of the heat source radiation energy and the photovoltaic cell forbidden band width in the traditional thermophotovoltaic cell, the invention is provided with the infrared band back reflector, the heat radiation energy which is not utilized by the cell is reflected back to the radiation source, and the forbidden band matching of the spectrum is realized by increasing the temperature of the heat radiation source and the re-radiation of the energy. The back reflector also reduces the energy transferred to the heat dissipation system connected to the back of the battery, thereby reducing the heat loss of the entire system and improving the system efficiency.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of a thermophotovoltaic system provided by the present invention.
Fig. 2 is a front view of a thermophotovoltaic system according to the present invention.
Fig. 3 is a schematic view of a back reflector structure provided in the present invention.
Fig. 4 is a schematic structural diagram of a photovoltaic cell and a back reflector provided by the present invention.
FIG. 5 is a graph comparing the out-of-band (0.3-0.7eV) IR reflectance curves at 1200 ℃ for a back reflector prepared in example 1 of the present invention with a back reflector without microstructures.
Fig. 6 is a schematic structural view of a back reflector prepared in embodiment 3 of the present invention.
Fig. 7 is a schematic structural view of a back reflector prepared in embodiment 4 of the present invention.
In the figure, 1-heat source, 2-heat radiator, 3-photovoltaic cell, 4-back reflector, 41-groove, 42-projection, 5-radiating fin, 6-heat insulating material.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, the present application provides a thermophotovoltaic system with a back reflector, which includes a heat source 1, a heat radiator 2, a photovoltaic cell 3, a heat dissipation fin 5 and a heat insulating material 6, wherein the heat dissipation fin 5 is a temperature regulation unit of the photovoltaic cell 3. Between the photovoltaic cells 3 and the heat sink fins 5, a back reflector 4 is provided. The back reflector 4 comprises a metal substrate, and a micron thick metal film deposited on the metal substrate. The back reflector 4 is the spectral modulation unit of the system. For the energy radiated by the heat source 1 to the photovoltaic cell 3 through the heat radiator 2 but not utilized by the photovoltaic cell 3, the back reflector 4 reflects part of the energy back to the heat source 1 and the heat radiator 2 to increase the temperature of the heat source 1 and the heat radiator 2, and the part of the energy can be radiated to the photovoltaic cell 3 again, so that the forbidden band matching of the spectrum is realized. Because the back reflector 4 is disposed on the back of the photovoltaic cell 3, the back reflector 4 can also reduce the energy transferred to the heat dissipation system on the back of the photovoltaic cell 4, thereby reducing the heat dissipation of the whole system and improving the system efficiency.
Compared with the traditional solar cell, the spectrum range of the heat source of the thermophotovoltaic cell is larger, and the energy proportion of the cell capable of being directly utilized is smaller, so that an infrared heat energy recovery system which is more effective and easy to implement must be provided for improving the energy utilization efficiency of the thermophotovoltaic system. The spectral range reflected by the planar back reflector 4 is limited, and in order to improve the energy recovery utilization rate and reduce the parasitic absorption effect, as shown in fig. 3 and 4, a microstructure is further provided on the metal film of the back reflector 4, the microstructure includes a groove 41 and a protrusion 42, and the protrusion 42 may be set to be any one or more of a linear shape, a zigzag shape, a wave shape or a salient point. The microstructured back reflector 4 can provide microstructure-based air cavities, providing greater thermal resistance in the direction of thermal energy loss; meanwhile, the multilayer reflective interface formed by the air and the back reflector 4 provides higher infrared reflection efficiency, so that the overall heat recovery efficiency of the thermophotovoltaic system is improved.
The invention also provides a preparation method of the thermophotovoltaic system with the back reflector, which comprises the following steps:
step one, providing a metal substrate, and preparing a metal film on the metal substrate to obtain the back reflector.
The metal film is prepared by a physical deposition method, wherein the physical deposition method is any one of magnetron sputtering, pulsed laser deposition, vacuum thermal evaporation, chemical vapor deposition, ion deposition or high-temperature pyrolysis spraying. The surface stably combined with the photovoltaic cell and prepared by adopting a physical deposition methodThe flat metal back reflector with high infrared reflectivity can successfully improve the thermoelectric conversion efficiency of the thermophotovoltaic power generation system. Preferably, the physical deposition method is magnetron sputtering, the sputtering power is 150--5Torr。
The metal substrate is an aluminum substrate, and the thickness of the metal substrate is 2-3 mm; the metal film is any one of gold (Au), silver (Ag), platinum (Pt) and iridium (Ir), and has a thickness of 3-10 μm.
Optionally, the first step further comprises grinding the surface of the metal substrate to make the roughness Ra less than 0.1, and processing the metal film on the rough surface.
Optionally, in the first step, a microstructure is etched on the metal film. The microstructure includes a groove and a protrusion. The method for etching the microstructure is any one of plasma etching, ultraviolet light etching, electron beam etching or chemical corrosion etching.
Optionally, the microstructure includes a groove and a protrusion, and the protrusion is any one or more of a linear shape, a zigzag shape, a wave shape or a salient point. In the embodiment shown in FIG. 3, the protrusions are linear, and a photolithographic mask with a period of 5-150nm and a line width of 25-50nm is prepared first, and then grooves with a period of 5-150nm and a line width of 25-50nm are grown on the metal film by an electron beam deposition method.
And step two, providing a photovoltaic cell, wherein one surface of the back reflector is tightly pressed on the back surface of the photovoltaic cell.
The photovoltaic cell is a narrow-gap photovoltaic cell which is used as a radiation receiver and a photoelectric converter of the system, the photovoltaic cell is a doped III-V semiconductor compound prepared by a physical deposition technology, and the III-V semiconductor compound is any one of gallium arsenide (GaAs), gallium antimonide (GaSb), gallium indium arsenide (InGaAs) and gallium indium antimonide (InGaAsSb).
Optionally, the back reflector is pressed against the back side of the photovoltaic cell by a pressing device at a temperature of 800-.
And step three, arranging a heat dissipation fin on the other surface of the back reflector.
The material of the radiating fin is metal copper.
And step four, providing a heat radiator and a heat source which are arranged on the photovoltaic cell, and providing a heat-insulating material which is arranged outside the photovoltaic system.
The heat radiator is arranged beside a heat source, the material of the heat radiator is any one of silicon carbide (SiC), metal tungsten (W) or metal tantalum (Ta), and the heat source is any one of a natural gas combustion chamber, a solar radiation condenser and an isotope heat source.
The heat insulating material is aluminum silicate.
Example 1
(1) The heat radiator 2 is made of a silicon carbide material. Adding a proper amount of silicon carbide raw material into a graphite crucible by utilizing a Physical Vapor Transport (PVT) technology, placing the graphite crucible at the bottom, arranging a crystal low-temperature growth area at the upper part of the crucible, heating the bottom of the crucible to 2000 ℃, controlling the temperature gradient of the silicon carbide raw material to be 5-20K/cm, enabling the deposition rate of the silicon carbide to be less than or equal to 0.5mm/h, finally obtaining a silicon carbide sheet with the diameter of more than 3cm and the thickness of more than 1mm, and polishing to obtain the silicon carbide heat radiator.
(2) A photovoltaic cell 3 is prepared by adopting a gallium indium antimony arsenide material and is used as a system radiation receiver and a photoelectric converter. Preparing a GaInSb wafer by using an MOCVD method, sequentially cleaning the GaInSb wafer by using acetone, ethanol, hydrochloric acid and ethanol, blow-drying by using nitrogen, diffusing and doping a zinc (Zn) element on the surface of the GaInSb wafer by using a physical vapor deposition method to form a pn junction, and preparing upper and lower surface electrodes of a battery by using a physical deposition and photoetching method.
(3) A metal aluminum substrate with the thickness of 2-3mm is manufactured by a Pulse Laser Deposition (PLD) method, and the growth rate is 0.4 mm/h. And grinding the surface of the prepared metal aluminum substrate by using a grinder to ensure that the roughness Ra < 0.1. Preparing a 5-micron gold layer on an aluminum substrate by a magnetron sputtering method, wherein the sputtering parameters are as follows: the sputtering power is 175W, the deposition temperature is 400 ℃, the oxygen flow is 12.5sccm, and the vacuum degree of the back bottom is less than 10-5 Torr. Preparing a photoetching mask with the period of 100nm and the line width of 25nm, and growing grooves with the period of 100nm and the line width of 25nm made of the same materials on the prepared gold layer with the thickness of 5 microns by using an electron beam deposition method. The prepared back reflector 4 with the groove microstructure is pressed tightly on the back surface of the battery at a certain pressure by a pressing device under the heating condition of 800 ℃.
(4) Red copper radiating fins 5 are mounted on the back of the photovoltaic cell provided with the back reflector.
(5) And a heat-insulating material 6 made of aluminum silicate is arranged outside the system and used for reducing heat loss of the system.
Compared with the conventional thermophotovoltaic system without the back reflector 4, the thermophotovoltaic system provided in example 1 has the system efficiency improved by 22.5% under the condition that the emitter is near black body radiation at 1200 ℃.
Fig. 5 shows a graph of photon reflectance for a back reflector without microstructures compared to a back reflector with microstructures. The system with the back reflector of example 1 of the present invention has a reduced heat source power from about 1250W to about 1040W, about 16% lower for the same temperature (1200 c) maintained by the emitter compared to a system with the same material, non-microstructured back reflector, demonstrating that the system efficiency is superior to a thermophotovoltaic system with a non-microstructured back reflector, while also reducing the heat loss of the system.
Example 2
(1) The heat radiator 2 is made of a silicon carbide material. Adding a proper amount of silicon carbide raw material into a graphite crucible by utilizing a Physical Vapor Transport (PVT) technology, placing the graphite crucible at the bottom, arranging a crystal low-temperature growth area at the upper part of the crucible, heating the bottom of the crucible to 2000 ℃, controlling the temperature gradient of the silicon carbide raw material to be 5-20K/cm, enabling the deposition rate of the silicon carbide to be less than or equal to 0.5mm/h, finally obtaining a silicon carbide sheet with the diameter of more than 3cm and the thickness of more than 1mm, and polishing to obtain the silicon carbide heat radiator.
(2) A gallium arsenide material is used for preparing a photovoltaic cell 3 which is used as a system radiation receiver and a photoelectric converter. Preparing a gallium arsenide wafer by using an MOCVD method, sequentially cleaning the gallium arsenide wafer by using dimethylbenzene, ethanol, hydrochloric acid and ethanol, drying the gallium arsenide wafer by using nitrogen, diffusing and doping zinc (Zn) elements on the surface of the gallium arsenide wafer by using a thermal evaporation method to form pn junctions, and preparing electrodes on the upper surface and the lower surface of a battery by using a physical deposition and photoetching method.
(3) The metal aluminum substrate with the thickness of 2-3mm is manufactured by a Pulse Laser Deposition (PLD) method, and the growth rate is 0.4 mm/h. And grinding the surface of the prepared metal aluminum substrate by using a grinder to ensure that the roughness Ra of the metal aluminum substrate is less than 0.1. Preparing a platinum layer with the thickness of 4 mu m on an aluminum substrate by a magnetron sputtering method, wherein the sputtering parameters are as follows: the sputtering power is 200W, the deposition temperature is 410 ℃, the oxygen flow is 12.0sccm, and the vacuum degree of the back bottom is less than 10-5 Torr. Preparing a photoetching mask with the period of 75nm and the line width of 30nm, and growing grooves with the period of 75nm and the line width of 30nm made of the same material on the prepared platinum layer with the thickness of 4 microns by using an electron beam deposition method. The prepared back reflector 4 with the groove microstructure is pressed tightly on the back surface of the battery at a certain pressure by a pressing device under the heating condition of 800 ℃.
(4) Brass cooling fins 5 are mounted on the back of the photovoltaic cell where the back reflector is located.
(5) And a heat-insulating material 6 made of aluminum silicate is arranged outside the system and used for reducing heat loss of the system.
Compared with the thermophotovoltaic system without the battery back reflector with the same structure, the thermophotovoltaic system based on the metal microstructure back reflector prepared in the embodiment 2 has the advantages that the system efficiency is improved by 18.8% under the condition that the temperature of the emitter is 1200 ℃ and is close to black body radiation, and meanwhile, the heat loss of the system is reduced. The comprehensive efficiency is superior to that of the traditional thermophotovoltaic system.
Example 3
Example 3 is the same as the preparation method of example 1 except that a back reflector with a zigzag-shaped microstructure of the same material having a periodic interval of 5to 150nm and a line width of 25 to 50nm is grown on a gold layer of 5 μm thickness by an electron beam deposition method, and the structure thereof is shown in fig. 6.
Example 4
Example 4 is the same as the preparation method of example 1 except that a back reflector having a bump-shaped microstructure with a period interval of 5to 150nm and a line width of 25 to 50nm of the same material is grown on a gold layer of 5 μm thickness by an electron beam deposition method, and the structure thereof is shown in fig. 7.
In summary, the invention provides a thermophotovoltaic system with a back reflector and a preparation method thereof, wherein a metal material with high infrared reflectivity is placed on the back of a photovoltaic cell in the thermophotovoltaic system to form a cell back reflector, and out-of-band infrared radiant energy which is not utilized by the photovoltaic cell is reflected back to a heat radiator, so that the system efficiency is improved by more than 18%, the comprehensive utilization rate of the system to the energy of the heat radiator is obviously improved, and the heat dissipation of the system is reduced. The system efficiency of the radiator at 1200 ℃ obtained by each embodiment is superior to that of the traditional thermophotovoltaic power generation device which does not adopt the method, so that the invention can prove that the power generation performance of the traditional thermophotovoltaic power generation system is effectively improved. In addition, the manufacturing method of the thermophotovoltaic system based on the metal microstructure back reflector has universality and mature preparation method, and is suitable for engineering application.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A thermophotovoltaic system with a back reflector, comprising:
photovoltaic cells as radiation receivers and photoelectric converters;
a heat dissipating fin; and
a back reflector disposed therebetween; the back reflector includes a metal substrate and a metal film deposited on the metal substrate.
2. The thermophotovoltaic system according to claim 1, wherein the metal thin film is provided with microstructures; the microstructure comprises a groove and a bulge, wherein the bulge is any one or more of a straight line shape, a broken line shape, a wave shape or a salient point.
3. The thermophotovoltaic system according to claim 1, wherein the metal substrate is an aluminum substrate, and the metal thin film is any one of gold, silver, platinum, and iridium.
4. The thermophotovoltaic system according to claim 1, further comprising:
a heat radiator disposed on the photovoltaic cell;
a heat source; and
and the heat insulation material is arranged on the outer side of the thermal photovoltaic system.
5. A method of manufacturing a thermophotovoltaic system with a back reflector for use in manufacturing a thermophotovoltaic system according to any one of claims 1 to 4, comprising:
providing a metal substrate, and preparing the metal film on the metal substrate to obtain the back reflector;
step two, providing a photovoltaic cell, wherein one surface of the back reflector is tightly pressed on the back surface of the photovoltaic cell;
and step three, arranging a heat dissipation fin on the other surface of the back reflector.
6. The production method according to claim 5, wherein the metal thin film is produced by a physical deposition method which is any one of magnetron sputtering, pulsed laser deposition, vacuum thermal evaporation, chemical vapor deposition, ion deposition, or high-temperature pyrolysis spraying.
7. The method as claimed in claim 6, wherein the physical deposition method is magnetron sputtering with a sputtering power of 150--5Torr。
8. The method of claim 5, wherein step one further comprises:
etching a microstructure on the metal film, wherein the microstructure comprises a groove and a bulge;
the method for etching the microstructure is any one of plasma etching, ultraviolet light etching, electron beam etching or chemical corrosion etching.
9. The method according to claim 5, wherein in step two, the back reflector is pressed against the back surface of the photovoltaic cell by a pressing device at a temperature of 800-900 ℃.
10. The method of claim 5, further comprising:
and step four, providing a heat radiator and a heat source which are arranged on the photovoltaic cell, and providing a heat-insulating material which is arranged outside the photovoltaic system.
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| CN117240187A (en) * | 2023-11-15 | 2023-12-15 | 浙江省白马湖实验室有限公司 | Near-field thermophotovoltaic device with two-dimensional photonic crystal radiator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117240187A (en) * | 2023-11-15 | 2023-12-15 | 浙江省白马湖实验室有限公司 | Near-field thermophotovoltaic device with two-dimensional photonic crystal radiator |
| CN117240187B (en) * | 2023-11-15 | 2024-02-02 | 浙江省白马湖实验室有限公司 | Near-field thermophotovoltaic device with two-dimensional photonic crystal radiator |
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