CN114093837A - QFN/LGA packaging structure with exposed lead led out from top and manufacturing method thereof - Google Patents

QFN/LGA packaging structure with exposed lead led out from top and manufacturing method thereof Download PDF

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Publication number
CN114093837A
CN114093837A CN202111199466.5A CN202111199466A CN114093837A CN 114093837 A CN114093837 A CN 114093837A CN 202111199466 A CN202111199466 A CN 202111199466A CN 114093837 A CN114093837 A CN 114093837A
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qfn
lga
copper
exposed
core
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CN114093837B (en
Inventor
陈勇
汪婷
张怡
梁大钟
王晓斌
熊丽萍
高爽
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Guangdong Chippacking Technology Co ltd
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Guangdong Chippacking Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector

Abstract

The invention provides a package structure of QFN/LGA (quad Flat No-lead/quad Flat Package) led out from the top and a manufacturing method thereof, wherein the package structure comprises a kernel, a heat sink and a copper column, the copper column is electrically connected with the kernel, the heat sink is positioned at the bottom of the QFN/LGA after being packaged and attached to the kernel, and the copper column extends to the top of the QFN/LGA after being packaged from the part electrically connected with the kernel. The manufacturing method comprises the following steps: arranging copper columns at intervals on the periphery of a radiating fin of the QFN/LGA, wherein the copper columns extend to a first distance in a direction opposite to the exposed surface of the outer side of the radiating fin; attaching the inner core to the inner side of the radiating fin; electrically connecting the inner core with the copper column; packaging the radiating fin, the inner core and the copper column into a whole; polishing is performed so that the heat sink and the copper pillar are exposed at the bottom and the top of the QFN/LGA package, respectively. The radiating fins and the exposed leads are not on the same surface, so that the radiating fin area of the PCB can be saved, the miniaturization and integration degree of the PCB is higher, and more functions of the PCB are realized under the condition of unchanged size.

Description

QFN/LGA packaging structure with exposed lead led out from top and manufacturing method thereof
Technical Field
The invention relates to the technical field of QFN (quad Flat No lead) packaging or LGA (land grid array) packaging, in particular to a QFN/LGA packaging structure with an exposed lead led out from the top and a manufacturing method thereof.
Background
QFN (Quad Flat No-leads Package), one of surface mount packages, is a leadless Package, is square or rectangular, has a large area of exposed bonding pad at the center of the bottom for heat conduction, and has electrically conductive bonding pads surrounding the periphery of the large bonding pad for electrical connection. Lga (land Grid array) or Grid array packages replace conventional pin-shaped pins with metal contact packages.
In the prior art, both exposed lead and heat sink of QFN/LGA are designed on the same side, i.e. both exposed lead and heat sink are designed on the bottom of the package. This design requires that the position of fin and exposed lead must be reserved simultaneously to the PCB board of customer end, just can carry out the welding of upper plate, and the regional wiring that can not lay wire of fin on the PCB board, therefore occupies PCB face area great, is unfavorable for PCB miniaturization and integration.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a package structure of QFN/LGA with an exposed lead led out from the top, comprising a core, a heat sink and a copper pillar, wherein the core, the heat sink and the copper pillar are packaged into a whole by a molding compound, the copper pillar is electrically connected to the core, the heat sink is located at the bottom of the QFN/LGA after packaging and attached to the core, and the copper pillar extends from the position electrically connected to the core to the top of the QFN/LGA after packaging.
Optionally, the heat sink is attached to the core with epoxy resin.
Optionally, the copper pillar is electrically connected with the core in a gold wire bonding manner.
Optionally, the exposed part of the copper column on the top of the QFN/LGA after packaging is provided with a plating layer.
Optionally, the copper column is provided with an axial through hole.
The invention also provides a manufacturing method of the QFN/LGA packaging structure with the exposed lead led out from the top, which comprises the following steps:
s10 arranging copper columns at intervals on the periphery of the heat sink of QFN/LGA, wherein the copper columns extend to the opposite direction of the outer exposed surface of the heat sink for a first distance;
s20, attaching the inner core to the inner side of the radiating fin;
s30 electrically connecting the inner core and the copper column;
s40, packaging the radiating fin, the inner core and the copper column into a whole;
s50, polishing treatment is carried out to expose the heat sink and the copper column on the bottom and the top of the QFN/LGA package respectively.
Optionally, in step S20, the core is attached to the heat sink by using epoxy resin.
Optionally, in step S30, the core is electrically connected to the copper pillar by gold wire bonding.
Optionally, in step S50, after polishing, the exposed copper pillar on the top of the QFN/LGA package is electroplated to form a plated layer.
Optionally, in step S10, the copper pillar is provided with an axial through hole; when the copper column is arranged, a positioning pin of a positioning mould is inserted into the axial through hole of the copper column for positioning; in step S40, after the encapsulation, the positioning pins of the positioning mold are pulled out.
The invention relates to a QFN/LGA packaging structure leading out an exposed lead from the top and a manufacturing method thereof.A novel QFN/LGA packaging structure is designed to save the area of a radiating fin, lead out the exposed lead from the top of the QFN/LGA packaging through a copper column, then inversely mount a product on a PCB, lead the radiating fin to be positioned at the top of a packaging product, namely, the radiating fin and the exposed lead are not positioned on the same surface, thereby not only meeting the radiating requirement of the product, but also saving the wiring position on the PCB, leading the PCB to have more space for designing signals and realizing more functions under the condition that the size of the PCB is unchanged. During manufacturing, copper columns are arranged at intervals on the periphery of the heat sink of the QFN/LGA, extend to a first distance in the direction opposite to the exposed surface on the outer side of the heat sink, and the first distance can ensure that the copper columns are exposed from the top of the packaged QFN/LGA, so that the heat sink and the exposed lead are not on the same surface.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic cross-sectional view of a QFN package structure with an exposed lead led out from the top according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a package structure of an LGA with an exposed lead led out from the top according to an embodiment of the present invention;
FIG. 3 is a flowchart illustrating a method for manufacturing a QFN/LGA package structure with exposed leads led out from the top according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view showing the effect of each step in the flow of an embodiment of a method for manufacturing a QFN/LGA package structure with exposed leads led out from the top;
FIG. 5 is a schematic plan view of the layout of the matching portion of the package structure using the PCB and QFN/LGA of the present invention.
In the figure: 1-inner core, 2-radiating fin, 3-copper column, 4-lead surface layer, 5-epoxy resin, 6-gold thread, 7-plastic package material, 8-electroplated layer and 9-copper column welding spot.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
As shown in fig. 1 and 2, an embodiment of the present invention provides a package structure of QFN/LGA with an exposed lead led out from the top, including a core 1, a heat sink 2 and a copper pillar 3, which are packaged as a whole by a molding compound 7, wherein the copper pillar 3 is electrically connected to the core 1, the heat sink 2 is located at the bottom of the QFN/LGA after packaging and is attached to the core 1, and the copper pillar 3 extends from a portion electrically connected to the core to the top of the QFN/LGA after packaging.
The working principle and the beneficial effects of the technical scheme are as follows: the scheme adopts a novel QFN/LGA packaging structure, the exposed lead is led out from the top of the QFN/LGA packaging through the copper column, and then the product is reversely mounted and attached on the PCB, so that the radiating fin is positioned at the top of the packaging product, namely the radiating fin and the exposed lead are not positioned on the same surface, the radiating fin area is saved, and the position of the PCB can be fully utilized; therefore, the heat dissipation requirement of the product is met, the wiring position on the PCB is saved, more signals are designed in the PCB in space, and more functions can be realized under the condition that the size of the PCB is not changed; wherein, the electric connection part of the copper column from the inner core is the lead surface layer 4.
In one embodiment, the heat sink 2 is attached to the core 1 by using epoxy resin 5; the copper column 3 is electrically connected with the inner core 1 in a gold wire 6 bonding mode; the exposed part of the copper column 3 at the top of the QFN/LGA after packaging is provided with an electroplated layer 8.
The working principle and the beneficial effects of the technical scheme are as follows: in the scheme, the inner core is attached to the inner side of the radiating fin by using the epoxy resin, so that the inner core and the radiating fin are attached more tightly and more stably, and the radiating reliability and the radiating durability of the radiating fin are improved; the copper column is electrically connected with the inner core in a gold wire bonding mode, and the gold wire bonding mode is mature in process technology and beneficial to guaranteeing process quality; the electroplated layer is arranged on the exposed part of the copper column on the top of the QFN/LGA after packaging, so that the surface of an electric connection point after packaging can be protected from being oxidized, the electric connection is reliable after the PCB is welded, and the performance of the PCB is better guaranteed.
In one embodiment, the copper cylinder 3 is provided with an axial through hole.
The working principle and the beneficial effects of the technical scheme are as follows: according to the scheme, the copper column is provided with the axial through hole, so that the copper column is accurately positioned during manufacturing to guarantee the position of the packaged copper column, avoid deviation of a connecting point welded on a PCB, and improve the process quality and the yield of products; secondly, the existence of the axial through hole reduces the penetration depth of the solder, and ensures the fullness and reliability of the solder filling in the welding surface; thirdly, during welding, the axial through hole can be used for discharging gas generated by welding, and the gas is prevented from being sealed in the welding surface to influence the welding quality; fourthly, the existence of the axial through hole is also beneficial to promoting heat dissipation in the process, reducing the possibility of deformation and improving the yield of products.
In one embodiment, the copper cylinder 3 is coaxial with the axial through hole, and the cross section of the copper cylinder 3 is circular ring or polygonal ring; the height of the copper pillar 3 is equal to the thickness after packaging, and the relationship between the wall thickness and the height of the copper pillar 3 conforms to the following equation:
Figure BDA0003304382500000041
in the above formula, d represents the wall thickness of the copper cylinder with an annular cross section; gamma represents the coefficient of thermal expansion of the copper cylinder; h represents the height of the copper pillar; Δ t represents the temperature rise of the copper cylinder during welding or heating, and is determined according to the process; and delta represents the maximum deformation amount allowed by the copper column, and is selected and determined according to requirements during design.
The working principle and the beneficial effects of the technical scheme are as follows: according to the scheme, the copper column and the axial through hole are arranged coaxially, so that the cross section of the copper column is circular or polygonal; according to the equation, the relation between the wall thickness and the height of the copper column is determined to ensure the strength of the copper column, so that the copper column can keep the original shape when the temperature is changed in the process, and the influence on the reliability of electric connection and the quality of products due to the deformation of the copper column is prevented; the equation fully considers the change of the copper column temperature possibly brought on the welding or other procedures in the manufacturing process and the temperature characteristic condition of the copper column material, thereby improving the process precision and ensuring the consistency of the product quality.
As shown in fig. 3 and 4, an embodiment of the present invention provides a method for manufacturing a QFN/LGA package structure with an exposed lead led out from the top, including the following steps:
s10 arranging copper columns 3 at intervals on the periphery of the heat sink 2 of QFN/LGA, and extending the copper columns 3 to a first distance in the opposite direction of the outer exposed surface of the heat sink 2;
s20 attaching the core 1 to the inner side of the heat sink 2;
s30 electrically connecting the inner core 1 and the copper column 3;
s40, packaging the radiating fin 2, the inner core 1 and the copper column 3 into a whole by adopting a plastic package material 7;
s50, polishing process is performed to expose the heat spreader 2 and the copper pillar 3 on the bottom and top of the QFN/LGA package, respectively.
The working principle and the beneficial effects of the technical scheme are as follows: during manufacturing, the copper columns are arranged at intervals on the periphery of the radiating fin of the QFN/LGA, and extend for a first distance in the direction opposite to the exposed surface on the outer side of the radiating fin, and the first distance can ensure that the copper columns are exposed from the top of the packaged QFN/LGA, so that the radiating fin and the exposed lead are not on the same surface; the novel QFN/LGA packaging structure is formed, the exposed lead is led out from the top of the QFN/LGA packaging through the copper column, and then the product is reversely mounted on the PCB, so that the radiating fin is positioned at the top of the packaging product, namely the radiating fin and the exposed lead are not positioned on the same surface, thereby not only meeting the radiating requirement of the product, but also saving the position of wiring on the PCB, leading the PCB to have more signals in space design, and realizing more functions under the condition that the size of the PCB is unchanged; in the scheme, the copper columns are arranged, lead (lead) to be led out is welded on the positions where the lead is added by using an SMT (Surface mount Technology), wherein the SMT is the Surface mounting Technology (abbreviation of Surface Mounted Technology), the SMT paster refers to the abbreviation of a series of process flows processed on the basis of a PCB (printed Circuit board), and the PCB is a printed Circuit board; before the inner core is attached to the radiating fin, a lead surface Layer (LF) welded with the copper column is cleaned by Plasma (Plasma); and during polishing, polishing the plastic package material to the height of 0-0.05 mm of exposed led so as to realize the welding with the PCB.
In one embodiment, as shown in fig. 4, in step S20, the core 1 is attached to the heat sink 2 by using epoxy resin 5; in step S30, the core 1 is electrically connected to the copper pillar 3 by bonding with a gold wire 6.
The working principle and the beneficial effects of the technical scheme are as follows: in the scheme, the inner core is attached to the inner side of the radiating fin by using the epoxy resin, so that the inner core and the radiating fin are attached more tightly and more stably, and the radiating reliability and the radiating durability of the radiating fin are improved; the copper column is electrically connected with the inner core in a gold wire bonding mode, and the gold wire bonding mode is mature in process technology and beneficial to guaranteeing process quality.
In one embodiment, as shown in FIG. 4, in step S50, after polishing, the copper pillar 3 is electroplated on the exposed top of the QFN/LGA package to form a plated layer 8.
The working principle and the beneficial effects of the technical scheme are as follows: the electroplated layer is arranged on the exposed part of the top of the copper column after the encapsulation of the QFN/LGA, so that the surface of an electric connection point after the encapsulation can be protected from being oxidized, the electric connection is reliable after the electric connection is used for PCB welding, and the performance of the PCB is better guaranteed.
In one embodiment, in step S10, the copper pillar 3 is provided with an axial through hole; when the copper column 3 is arranged, a positioning pin of a positioning mould is inserted into the axial through hole of the copper column 3 for positioning; in step S40, after the encapsulation, the positioning pins of the positioning mold are pulled out.
The working principle and the beneficial effects of the technical scheme are as follows: according to the scheme, the copper column is provided with the axial through hole, firstly, a positioning pin of a positioning mould is conveniently inserted into the axial through hole during manufacturing for accurate positioning, so that the position of the packaged copper column is ensured, deviation of a connecting point welded on a PCB is avoided, and the process quality and the yield of products are improved; secondly, the existence of the axial through hole reduces the penetration depth of the solder, and ensures the fullness and reliability of the solder filling in the welding surface; thirdly, during welding, the axial through hole can be used for discharging gas generated by welding, and the gas is prevented from being sealed in the welding surface to influence the welding quality; fourthly, the existence of the axial through hole is also beneficial to promoting heat dissipation in the process, reducing the possibility of deformation and improving the yield of products.
In the following, a six-pin QFN/LGA package is taken as an example for further explanation, and as shown in fig. 4 and 5, the process of the six-pin QFN/LGA package is as follows:
a. pasting a copper column: welding six copper columns 3 on the six leads to be led out respectively at positions where the leads are increased by using an SMT process;
b. cleaning: cleaning a lead surface Layer (LF) welded on the copper column by using Plasma (Plasma);
c. and (3) mounting: the inner core 1 is attached to the inner side of the radiating fin 2 by epoxy resin 5;
d. bonding: electrically connecting the inner core 1 and the copper column 3 by adopting a gold wire bonding mode;
e. plastic packaging: the radiating fin 2, the inner core 1 and the copper column 3 are packaged into a whole by adopting a plastic package material 7;
f. polishing: polishing the plastic package material to the height of 0-0.05 mm of exposed led, so that the heat sink 2 and the copper column 3 are respectively exposed at the bottom and the top of the QFN/LGA packaged product to realize the welding with the PCB;
g. electroplating: after polishing, the copper pillar 3 is electroplated on the exposed top of the QFN/LGA package to form a plated layer 8.
The six-pin QFN/LGA packaging structure manufactured by the method, the radiating fins and the exposed leads are not on the same surface, so that the radiating requirement of a product is met, the position of wiring on a PCB is saved, as shown in fig. 5, copper column welding spots 9 on the PCB are used for being respectively welded with the six pins of the QFN/LGA after packaging, mutual electric connection is realized, the positions in the middle of the six copper column welding spots 9 on the PCB are not needed to be used for avoiding the radiating fins, therefore, the radiating fins are arranged on the end surface of the QFN/LGA after packaging, which is far away from the PCB, therefore, the position space on the PCB can be used for designing more signals, and therefore, under the condition that the size of the PCB is not changed, more functions can be realized.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. The utility model provides an exposed lead from the packaging structure of QFN/LGA that the top was drawn forth, its characterized in that includes by core, fin and the copper post of plastic envelope encapsulation as an organic whole, the copper post is connected with the core electricity, the fin is located the bottom behind the encapsulation of QFN/LGA and laminates with the core, the copper post is by extending to the top behind the encapsulation of QFN/LGA with core electricity connection department.
2. The exposed lead top-out QFN/LGA package structure of claim 1, wherein the heat spreader is attached to the core with epoxy.
3. The exposed lead top-out QFN/LGA package structure of claim 1, wherein the copper pillar is electrically connected to the core by gold wire bonding.
4. The packaged structure of QFN/LGA with exposed lead led out from the top as claimed in claim 1, wherein the exposed portion of the copper pillar on the top of the QFN/LGA after packaging is provided with a plating layer.
5. The exposed lead top-out QFN/LGA package structure as recited in claim 1, wherein the copper pillar is provided with an axial through hole.
6. A manufacturing method of a QFN/LGA packaging structure with an exposed lead led out from the top is characterized by comprising the following steps:
s10 arranging copper columns at intervals on the periphery of the heat sink of QFN/LGA, wherein the copper columns extend to the opposite direction of the outer exposed surface of the heat sink for a first distance;
s20, attaching the inner core to the inner side of the radiating fin;
s30 electrically connecting the inner core and the copper column;
s40, packaging the radiating fin, the inner core and the copper column into a whole;
s50, polishing treatment is carried out to expose the heat sink and the copper column on the bottom and the top of the QFN/LGA package respectively.
7. The method of manufacturing a quad flat no-lead (QFN/LGA) package structure as claimed in claim 6, wherein in step S20, the core is attached to the heat sink by epoxy.
8. The method of claim 6, wherein in step S30, the core is electrically connected to the copper pillar by gold wire bonding.
9. The method of manufacturing a QFN/LGA package structure having an exposed lead led out of the top as claimed in claim 6, wherein in step S50, after polishing, the exposed top of the copper pillar after the package of QFN/LGA is plated to form a plated layer.
10. The method for manufacturing a QFN/LGA package structure with an exposed lead led out from the top as claimed in claim 6, wherein in the step S10, the copper pillar is provided with an axial through hole; when the copper column is arranged, a positioning pin of a positioning mould is inserted into the axial through hole of the copper column for positioning; in step S40, after the encapsulation, the positioning pins of the positioning mold are pulled out.
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