CN114093781A - Preparation method of mixed metal film filled with micro-nano metal particles, product and application thereof - Google Patents
Preparation method of mixed metal film filled with micro-nano metal particles, product and application thereof Download PDFInfo
- Publication number
- CN114093781A CN114093781A CN202111411058.1A CN202111411058A CN114093781A CN 114093781 A CN114093781 A CN 114093781A CN 202111411058 A CN202111411058 A CN 202111411058A CN 114093781 A CN114093781 A CN 114093781A
- Authority
- CN
- China
- Prior art keywords
- micro
- nano metal
- metal particles
- nano
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
- H01L2224/2711—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29164—Palladium [Pd] as principal constituent
Abstract
The invention relates to a preparation method of a mixed metal film filled with micro-nano metal particles, a product and application thereof, and belongs to the technical field of semiconductor chip packaging. The invention discloses a preparation method of a mixed metal film filled with micro-nano metal particles, which is mainly characterized in that micro-nano metal particles I with large particle sizes are made into a micro-nano metal matrix film, a physical spark ablation method is adopted to prepare micro-nano metal particle cores, a coating material is used for carrying out surface modification treatment on the micro-nano metal particle cores through an atomizing device, a coating layer with anti-oxidation and anti-agglomeration effects is formed on the surfaces of the micro-nano metal particle cores, micro-nano metal particles II with small particle sizes are obtained, and the micro-nano metal particles II are filled into the micro-nano metal matrix film by utilizing a physical impact method to prepare the mixed metal film filled with the micro-nano metal particles. The method can improve the density of the mixed metal film filled with the micro-nano metal particles, thereby improving the electric and heat conducting performances and the sintering performance, having simple process and improving the efficiency of the packaging process.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip packaging, and particularly relates to a preparation method of a mixed metal film filled with micro-nano metal particles, and a product and application thereof.
Background
At present, power electronic devices are developed towards high power, high density, high reliability and miniaturization, and higher requirements are also put forward on the packaging technology of semiconductor chips. In the technical field of packaging, the problem that the interconnection material with low temperature interconnection, high temperature service, matched thermal expansion coefficient and high reliability is required to be solved urgently is sought. Due to the size effect, the micro-nano metal particles can meet the requirements of low-temperature connection and high-temperature service in packaging. At present, nano silver sintering materials are mostly used in domestic and foreign packaging, and effective connection of high-power chips is realized. However, metallic silver is expensive and has poor electromigration resistance, making it difficult to use nano-silver sintered materials on a large scale for a long time. Meanwhile, the thermal expansion coefficients of the silver and the back of the chip are different, and other intermediate metal layers are required to be added to improve the interconnection capacity, so that the connection process is complex and the packaging cost is increased. The metal copper has low price, good electromigration resistance, high electric conductivity, heat conductivity and good mechanical property. Therefore, micro-nano metal copper becomes the best choice for replacing expensive and harmful interconnection materials such as nano sintered silver, gold, lead-containing solder and the like. However, as the copper particle size is smaller, the surface energy is larger, and oxidation and agglomeration easily occur during the preparation process, resulting in deterioration of the sintering property. In order to solve the oxidation and agglomeration phenomena of the micro-nano copper particles, the surfaces of the copper particles are coated to prevent the oxidation and agglomeration of the particles. However, in the process of particle storage, transportation or preparation, partial particle oxidation and particle agglomeration still occur, which affects the uniformity of the prepared sintered paste and makes it difficult to achieve effective, reliable and uniform connection to chips.
Secondly, when the micro-nano copper paste with the single size is sintered and connected, as the sintering is firstly generated among particles and the sintering connection is generated through neck connection, larger gaps are easily formed in a sintered body, and the electric conduction performance, the heat conduction performance and the like of a sintered layer are reduced. Higher energy inputs are typically required to achieve further densification, resulting in higher joining temperatures or times or pressures, increasing joining costs. Therefore, a need exists for a sintered package interconnect material that can accommodate a fast, efficient, and reliable interconnect process.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a method for preparing a mixed metal film filled with micro-nano metal particles; the second purpose is to provide a mixed metal film filled with micro-nano metal particles; the third purpose is to provide the application of the mixed metal film filled with micro-nano metal particles.
In order to achieve the purpose, the invention provides the following technical scheme:
1. a preparation method of a mixed metal film filled with micro-nano metal particles comprises the following steps:
filling the micro-nano metal particles II with the coating layers with the anti-oxidation and anti-agglomeration functions on the surfaces into a micro-nano metal matrix film by adopting a physical impact method to obtain a mixed metal film filled with the micro-nano metal particles;
the physical impact method comprises the following steps: and applying any one or more of an electric field, a magnetic field or air flow to the micro-nano metal particles II.
Preferably, the preparation method of the micro-nano metal particles II is as follows: and (3) carrying out surface modification treatment on the micro-nano metal particle cores by using the coating material by adopting an atomization method, and forming an anti-oxidation and anti-agglomeration coating layer on the surfaces of the micro-nano metal particle cores to obtain micro-nano metal particles II.
Preferably, the thickness of the mixed metal film filled with the micro-nano metal particles is 10-500 um.
Preferably, the micro-nano metal particle core is made of any one of copper, gold, palladium, silver, aluminum, silver-palladium alloy, gold-palladium alloy, copper-silver-nickel alloy or copper-aluminum alloy, and the diameter of the micro-nano metal particle core is not less than 1nm and not more than 50 nm.
Preferably, the coating material comprises a material I and a material II.
Preferably, the material I is any one or more of ethylene glycol, glycerol, diethylene glycol and triethylene glycol.
Preferably, the material II is any one or more of polyvinylpyrrolidone, polyethylene glycol, polyacrylic acid, carboxylic acid, phosphoric acid, hydrazine hydrate, oxalic acid, oleic acid, citric acid and C6-C18 fatty acid.
Preferably, the fatty acid of C6 to C18 includes a saturated fatty acid having a straight chain or a branched chain, and an unsaturated fatty acid having a straight chain or a branched chain.
Preferably, the mass ratio of the material I to the material II is 1: 10-9: 10.
Preferably, the preparation method of the micro-nano metal matrix film comprises the following steps:
(1) pouring micro-nano metal particles I with the diameter of 50nm or less and D or less than or equal to 500um into an organic carrier, stirring and mixing uniformly, and then centrifuging, precipitating, separating, washing and drying to obtain micro-nano metal particle paste;
(2) and (3) applying the micro-nano metal particle paste obtained in the step (1) to a supporting base material, and drying to obtain the micro-nano metal matrix film.
Preferably, the organic vehicle includes a solvent, a thickener, an active agent, and a thixotropic agent.
Preferably, the solvent is terpineol or ethylene glycol.
Preferably, the thickener is a phenolic resin or an epoxy resin.
Preferably, the active agent is rosin or lauric acid.
Preferably, the thixotropic agent is hydrogenated castor oil.
Preferably, the mass ratio of the micro-nano metal particles I to the organic carrier is 3: 2-4: 1.
Preferably, the micro-nano metal particles I are made of any one of copper, gold, palladium, silver, aluminum, silver-palladium alloy, gold-palladium alloy, copper-silver-nickel alloy or copper-aluminum alloy.
Preferably, the support substrate comprises silicone-coated polyester fibers, ceramic, glass and/or metallic materials.
Preferably, the method for applying the micro-nano metal particle paste to the support substrate comprises the following steps: and (3) applying the micro-nano metal particle paste in the step (1) to a supporting substrate by a silk screen printing, coating or spraying method.
The drying operation is carried out for 5-30 min at the temperature of 90-150 ℃.
Preferably, the mass ratio of the micro-nano metal particles I to the micro-nano metal particles II in the micro-nano metal matrix film is 1: 2-2: 1.
2. The mixed metal film filled with micro-nano metal particles prepared according to the above method.
3. The mixed metal film filled with the micro-nano metal particles is applied to packaging of semiconductor chips.
The invention has the beneficial effects that:
the invention provides a preparation method of a mixed metal film filled with micro-nano metal particles, which is characterized in that micro-nano metal particles I with large particle sizes are prepared into a micro-nano metal matrix film, a physical spark ablation method is adopted to prepare micro-nano metal particle cores, a coating material is used for carrying out surface modification treatment on the micro-nano metal particle cores in an atomizing nozzle mode, a coating layer with the functions of oxidation resistance and agglomeration resistance is formed on the surfaces of the micro-nano metal particle cores, micro-nano metal particles II with small particle sizes are obtained, kinetic energy is given to the micro-nano metal particles II, and the micro-nano metal particles are filled into the micro-nano metal matrix film in a physical impact mode to prepare the mixed metal film filled with the micro-nano metal particles. The method can improve the density of the mixed metal film filled with the micro-nano metal particles, thereby improving the electric conduction performance, the heat conduction performance and the sintering performance of the mixed metal film filled with the micro-nano metal particles. In the prior art, the interconnection material of the chip and the substrate is generally a paste material, and sintering pretreatment steps such as temperature rising homogenization, printing, drying and the like are required during application, and a mixed metal film filled with micro-nano metal particles can be subjected to film transfer to the interconnection substrate according to the size requirement of the chip to be connected during sintering, so that the steps such as printing, drying and the like can be omitted, and a more efficient packaging interconnection process is realized.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic diagram of preparation of a micro-nano metal particle paste in example 1;
FIG. 2 is a schematic diagram of the preparation of a micro-nano metal matrix film in example 1;
fig. 3 is a schematic view of the preparation of a mixed metal film filled with micro-nano metal particles in example 1;
fig. 4 is a schematic view of a mixed metal film filled with micro-nano metal particles in example 1;
fig. 5 is a diagram of a mixed metal film filled with micro-nano metal particles in example 1;
fig. 6 is a schematic view of a mixed metal film filled with micro-nano metal particles on a substrate in example 1;
fig. 7 is a schematic view of a semiconductor chip to be packaged in example 1 packaged on a mixed metal film on a substrate;
fig. 8 is a schematic sintering diagram of a mixed metal film filled with micro-nano metal particles in example 1;
fig. 9 is a schematic view of a packaged semiconductor chip in embodiment 1.
Number in the figure: 1 is micro-nano metal particle lotion, 2 is micro-nano metal particle I, 3 is the supporting baseplate, 4 is micro-nano metal base member membrane, 5 is nanometer particle generator, 6 is micro-nano metal particle core, 7 is atomizing device, 8 is the atomizing nozzle, 9 is micro-nano metal particle II, 10 is for filling has micro-nano metal particle's mixed metal film, 11 is for filling on the base plate has micro-nano metal particle's mixed metal film, 12 is the semiconductor chip of treating the encapsulation, 13 is the semiconductor chip of having encapsulated.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic way, and the features in the following embodiments and examples may be combined with each other without conflict.
Example 1
1. The preparation method of the mixed metal film filled with the micro-nano metal particles comprises the following steps:
(1) preparing a micro-nano metal particle core with copper as a raw material by adopting a nano particle generator with physical flame ablation;
(2) uniformly mixing ethylene glycol, glycerol, polyvinylpyrrolidone, polyethylene glycol and polyacrylic acid, atomizing by using an atomizing device, and uniformly spraying the mixture to the surface of a micro-nano metal particle core which is prepared by a nanoparticle generator and takes copper as a raw material to form an anti-oxidation and anti-agglomeration coating layer to obtain a micro-nano metal particle II with the diameter of 1nm, wherein the mass ratio of the ethylene glycol, the glycerol to the polyvinylpyrrolidone, the polyethylene glycol and the polyacrylic acid is 1: 10;
(3) pouring micro-nano metal particles I with the diameter of 50nm, which are made of copper as a raw material, into a mixture of terpineol, phenolic resin, rosin and hydrogenated castor oil, stirring and mixing uniformly, and then centrifuging, precipitating, separating, washing and drying to obtain a micro-nano metal particle paste (the preparation flow diagram is shown in figure 1, and 1 in the figure is the micro-nano metal particle paste), wherein the mass ratio of the micro-nano metal particles I to the terpineol is 3: 2;
(4) applying the micro-nano metal particle paste to a support base material by a coating method, and drying at 90 ℃ for 5min to obtain a micro-nano metal matrix film (the preparation flow chart is shown in fig. 2, wherein 2 is micro-nano metal particles I, 3 is a support substrate, and 4 is a micro-nano metal matrix film);
(5) the method comprises the following steps of filling micro-nano metal particles II into a micro-nano metal particle paste body by adopting a physical impact method to obtain a mixed metal film with the thickness of 10um and filled with the micro-nano metal particles (the preparation flow chart is shown in figure 3, 5 is a nanoparticle generator, 6 is a micro-nano metal particle core, 7 is an atomizing device, 8 is an atomizing nozzle, and 9 is the micro-nano metal particles II), wherein the physical impact method comprises the following steps: applying any one or more of an electric field, a magnetic field or air flow to the micro-nano metal particles II; the quantity of the micro-nano metal particles II which are driven into the micro-nano metal matrix film is controlled by adjusting the electric field, the magnetic field intensity, the airflow flow and the application time, wherein the mass ratio of the micro-nano metal particles I to the micro-nano metal particles II in the micro-nano metal matrix film is 1: 2.
2. The application of a mixed metal film filled with micro-nano metal particles in packaging a semiconductor chip comprises the following steps:
(1) attaching the mixed metal film on a DBC substrate (a schematic diagram of the mixed metal film filled with micro-nano metal particles is shown in figure 4, 2 is micro-nano metal particle I, 9 is micro-nano metal particle II, 10 is the mixed metal film filled with micro-nano metal particles, a physical diagram is shown in figure 5, a schematic diagram of the substrate is shown in figure 6, and 11 is the mixed metal film filled with micro-nano metal particles on the substrate), and drying in a drying box to volatilize part of organic carriers in the mixed metal film;
(2) and (2) attaching the semiconductor chip to be packaged to the mixed metal film volatilized in the step (1) (the schematic diagram of the semiconductor chip to be packaged on the mixed metal film on the substrate is shown in fig. 7, and 12 in the diagram is the semiconductor chip to be packaged), and sintering (the schematic diagram of sintering the mixed metal film filled with the micro-nano metal particles is shown in fig. 8, the schematic diagram of the semiconductor chip after packaging is shown in fig. 9, and 13 in the diagram is the packaged semiconductor chip).
Example 2
1. The preparation method of the mixed metal film filled with the micro-nano metal particles comprises the following steps:
(1) preparing a micro-nano metal particle core with aluminum as a raw material by adopting a nano particle generator with physical flame ablation;
(2) uniformly mixing diethylene glycol, triethylene glycol, carboxylic acid, hydrazine hydrate and oleic acid, atomizing by using an atomizing device, and uniformly spraying the mixture to the surface of a micro-nano metal particle core which is prepared by a nanoparticle generator and takes aluminum as a raw material to form a coating layer with the effects of preventing oxidation and agglomeration to obtain micro-nano metal particles II with the diameter of 50nm, wherein the mass ratio of ethylene glycol, glycerol to polyvinylpyrrolidone, polyethylene glycol and polyacrylic acid is 9: 10;
(3) pouring micro-nano metal particles I with the raw material of aluminum and the diameter of 500 mu m into a mixture of ethylene glycol, epoxy resin, lauric acid and hydrogenated castor oil, stirring and mixing uniformly, and then centrifuging, precipitating, separating, washing and drying to obtain micro-nano metal particle paste, wherein the mass ratio of the micro-nano metal particles I to terpineol is 4: 1;
(4) applying the micro-nano metal particle paste onto a supporting base material by a silk screen printing method, and drying at 150 ℃ for 30min to obtain a micro-nano metal matrix film;
(5) filling micro-nano metal particles II into a micro-nano metal particle paste by adopting a physical impact method to obtain a mixed metal film with the thickness of 500um and filled with the micro-nano metal particles, wherein the physical impact method comprises the following steps: applying any one or more of an electric field, a magnetic field or air flow to the micro-nano metal particles II; the quantity of the micro-nano metal particles II which are driven into the micro-nano metal matrix film is controlled by adjusting the electric field, the magnetic field intensity, the airflow flow and the application time, wherein the mass ratio of the micro-nano metal particles I to the micro-nano metal particles II in the micro-nano metal matrix film is 2: 1.
2. The application of a mixed metal film filled with micro-nano metal particles in packaging a semiconductor chip comprises the following steps:
(1) the mixed metal film is pasted on a DBC substrate and dried in a drying box, so that part of organic carriers in the mixed metal film are volatilized;
(2) and (3) pasting the semiconductor chip to be packaged on the mixed metal film volatilized in the step (1), and sintering.
After the performance test of the mixed metal film filled with the micro-nano metal particles prepared in examples 1-2, it is found that the prepared mixed metal film filled with the micro-nano metal particles can improve the density of the mixed metal film filled with the micro-nano metal particles, so as to improve the electric conduction performance, the heat conduction performance and the sintering performance of the mixed metal film filled with the micro-nano metal particles.
In the above embodiment, the raw materials of the micro-nano metal particle core and the micro-nano metal particle I in embodiments 1-2 are respectively replaced by any one of gold, palladium, silver-palladium alloy, gold-palladium alloy, copper-silver-nickel alloy or copper-aluminum alloy; replacing the material II in the coating material in the embodiment 1-2 by one or more of polyvinylpyrrolidone, polyethylene glycol, polyacrylic acid, carboxylic acid, hydrazine hydrate and oleic acid, wherein the material II is any one or more of phosphoric acid, oxalic acid, citric acid and C6-C18 fatty acid; in view of the fact that the materials have similar physical and chemical properties, the products prepared by mutual replacement are similar to those in examples 1-2, and mixed metal films filled with micro-nano metal particles are obtained.
In summary, the following steps: the method comprises the steps of preparing micro-nano metal particles I with large particle sizes into a micro-nano metal matrix film, preparing micro-nano metal particle cores by a physical spark ablation method, carrying out surface modification treatment on the micro-nano metal particle cores by a coating material in an atomizing nozzle mode, forming a coating layer with anti-oxidation and anti-agglomeration effects on the surfaces of the micro-nano metal particle cores to obtain micro-nano metal particles II with small particle sizes, endowing kinetic energy to the micro-nano metal particles II, and filling the micro-nano metal particles II into the micro-nano metal matrix film in a physical impact mode to prepare the mixed metal film filled with the micro-nano metal particles. The method can improve the density of the mixed metal film filled with the micro-nano metal particles, thereby improving the electric conduction performance, the heat conduction performance and the sintering performance of the mixed metal film filled with the micro-nano metal particles. In the prior art, the interconnection material of the chip and the substrate is generally a paste material, and sintering pretreatment steps such as temperature rising homogenization, printing, drying and the like are required during application, and a mixed metal film filled with micro-nano metal particles can be subjected to film transfer to the interconnection substrate according to the size requirement of the chip to be connected during sintering, so that the steps such as printing, drying and the like can be omitted, and a more efficient packaging interconnection process is realized.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Claims (10)
1. A preparation method of a mixed metal film filled with micro-nano metal particles is characterized by comprising the following steps:
filling the micro-nano metal particles II with the coating layers with the anti-oxidation and anti-agglomeration functions on the surfaces into a micro-nano metal matrix film by adopting a physical impact method to obtain a mixed metal film filled with the micro-nano metal particles;
the physical impact method comprises the following steps: and applying any one or more of an electric field, a magnetic field or air flow to the micro-nano metal particles II.
2. The method as claimed in claim 1, wherein the micro-nano metal particles II are prepared by the following steps: carrying out surface modification treatment on the micro-nano metal particle cores by using the coating material by adopting an atomization method, and forming an anti-oxidation and anti-agglomeration coating layer on the surfaces of the micro-nano metal particle cores to obtain micro-nano metal particles II;
the thickness of the mixed metal film filled with the micro-nano metal particles is 10-500 um.
3. The method as claimed in claim 2, wherein the micro-nano metal particle core is made of any one of copper, gold, palladium, silver, aluminum, silver-palladium alloy, gold-palladium alloy, copper-silver-nickel alloy or copper-aluminum alloy, and the diameter of the micro-nano metal particle core is 1nm or more and d or less than 50 nm.
4. The method of claim 2, wherein the cladding material comprises material I and material ii;
the material I is any one or more of ethylene glycol, glycerol, diethylene glycol and triethylene glycol;
the material II is any one or more of polyvinylpyrrolidone, polyethylene glycol, polyacrylic acid, carboxylic acid, phosphoric acid, hydrazine hydrate, oxalic acid, oleic acid, citric acid and C6-C18 fatty acid;
the fatty acid of C6-C18 comprises saturated fatty acid with straight chain or branched chain, unsaturated fatty acid with straight chain or branched chain;
the mass ratio of the material I to the material II is 1: 10-9: 10.
5. The method of claim 1, wherein the micro-nano metal matrix film is prepared by the following steps:
(1) pouring micro-nano metal particles I with the diameter of 50nm or less and D or less than or equal to 500um into an organic carrier, stirring and mixing uniformly, and then centrifuging, precipitating, separating, washing and drying to obtain micro-nano metal particle paste;
(2) and (3) applying the micro-nano metal particle paste obtained in the step (1) to a supporting base material, and drying to obtain the micro-nano metal matrix film.
6. The method of claim 5, wherein in step (1), the organic vehicle comprises a solvent, a thickener, an active agent, and a thixotropic agent;
the solvent is terpineol or glycol;
the thickening agent is phenolic resin or epoxy resin;
the active agent is rosin or lauric acid;
the thixotropic agent is hydrogenated castor oil;
the mass ratio of the micro-nano metal particles I to the organic carrier is 3: 2-4: 1;
the micro-nano metal particles I are made of any one of copper, gold, palladium, silver, aluminum, silver-palladium alloy, gold-palladium alloy, copper-silver-nickel alloy or copper-aluminum alloy.
7. The method of claim 5, wherein in step (2), the support substrate comprises silicone-coated polyester fibers, ceramic, glass, and/or metallic materials;
the method for applying the micro-nano metal particle paste to the supporting base material comprises the following steps: applying the micro-nano metal particle paste in the step (1) to a supporting base material by a silk screen printing, coating or spraying method;
the drying operation is carried out for 5-30 min at the temperature of 90-150 ℃.
8. The method according to claim 5, wherein the mass ratio of the micro-nano metal particles I to the micro-nano metal particles II in the micro-nano metal matrix film is 1: 2-2: 1.
9. The mixed metal film filled with micro-nano metal particles prepared by the preparation method according to any one of claims 1 to 8.
10. The use of the micro-nano metal particle filled mixed metal film of claim 9 in semiconductor chip packaging.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111411058.1A CN114093781A (en) | 2021-11-25 | 2021-11-25 | Preparation method of mixed metal film filled with micro-nano metal particles, product and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111411058.1A CN114093781A (en) | 2021-11-25 | 2021-11-25 | Preparation method of mixed metal film filled with micro-nano metal particles, product and application thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114093781A true CN114093781A (en) | 2022-02-25 |
Family
ID=80304407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111411058.1A Pending CN114093781A (en) | 2021-11-25 | 2021-11-25 | Preparation method of mixed metal film filled with micro-nano metal particles, product and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114093781A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114101661A (en) * | 2021-11-25 | 2022-03-01 | 重庆大学 | Preparation method of mixed slurry filled with micro-nano metal particles, product and application thereof |
-
2021
- 2021-11-25 CN CN202111411058.1A patent/CN114093781A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114101661A (en) * | 2021-11-25 | 2022-03-01 | 重庆大学 | Preparation method of mixed slurry filled with micro-nano metal particles, product and application thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11699632B2 (en) | Methods for attachment and devices produced using the methods | |
CN109935563B (en) | Multi-size mixed nano-particle paste and preparation method thereof | |
CN109979904B (en) | Multi-size nano-particle mixed metal film and preparation method thereof | |
US8257795B2 (en) | Nanoscale metal paste for interconnect and method of use | |
CN108847395B (en) | Preparation and packaging method of presintered nano-network silver film for low-temperature quick connection | |
CN114101661A (en) | Preparation method of mixed slurry filled with micro-nano metal particles, product and application thereof | |
CN102347252B (en) | bonding structure and method | |
US20020100972A1 (en) | Semiconductor device with gold bumps, and method and apparatus of producing the same | |
JP6848549B2 (en) | Copper paste for bonding and semiconductor devices | |
WO2020215739A1 (en) | Preparation method for nano-metal film module and substrate preparation method using nano-metal film module | |
CN102290117A (en) | Low temperature-sintered nano silver paste and preparation method thereof | |
CN110034090B (en) | Nano metal film auxiliary substrate and preparation method thereof | |
WO2023109597A1 (en) | Nano-copper solder paste and application thereof in chip packaging interconnection structure | |
CN114093781A (en) | Preparation method of mixed metal film filled with micro-nano metal particles, product and application thereof | |
WO2006126527A1 (en) | Silver-coated ball and method for manufacturing same | |
JP2004128357A (en) | Electrode arranged substrate and its electrode connection method | |
CN109967747B (en) | Multi-layer metal film and preparation method thereof | |
WO2021066026A1 (en) | Copper paste for joining, method for manufacturing joined body, and joined body | |
CN114502301A (en) | Copper paste for bonding, method for producing bonded body, and bonded body | |
JP2018060941A (en) | Conductive paste for joining | |
CN107639237A (en) | Cu/SiO2The preparation method of composite, its preparation method and copper ceramic substrate | |
Jin et al. | Novel conductive paste using hybrid silver sintering technology for high reliability power semiconductor packaging | |
Lai et al. | Study on the interconnect performance of multicomponent paste for 3rd generation semiconductor packaging | |
KR102151690B1 (en) | Composition for bonding material and method for preparing the same | |
CN113061415B (en) | In-situ self-heating packaging material and preparation method and application thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |