CN114093771A - Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process - Google Patents

Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process Download PDF

Info

Publication number
CN114093771A
CN114093771A CN202111335833.XA CN202111335833A CN114093771A CN 114093771 A CN114093771 A CN 114093771A CN 202111335833 A CN202111335833 A CN 202111335833A CN 114093771 A CN114093771 A CN 114093771A
Authority
CN
China
Prior art keywords
micro
hole
filled
nano metal
metal paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111335833.XA
Other languages
Chinese (zh)
Inventor
杨冠南
罗波
范超
钟朝彬
崔成强
张昱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong University of Technology
Original Assignee
Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong University of Technology filed Critical Guangdong University of Technology
Priority to CN202111335833.XA priority Critical patent/CN114093771A/en
Publication of CN114093771A publication Critical patent/CN114093771A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

The invention discloses a compaction processing method and a micropore filling process for filling a hole with a micro-nano metal paste, wherein the compaction processing method comprises the following steps: (1) gas in the hole to be filled overflows by vacuumizing, so that the micro-nano metal paste is promoted to permeate into the hole to be filled; (2) acting force is generated on the sample substrate or the micro-nano metal paste in the hole to be filled through an external instrument, so that the micro-nano metal paste in the hole to be filled has the acceleration moving to the bottom of the hole to be filled, and therefore compacting treatment is achieved. The compacting treatment method disclosed by the invention can be used for compacting the micro-nano metal paste on the sample substrate, so that the micro-nano metal paste filled in the hole to be filled can be more tightly and closely filled in the hole to be filled, and the compactness of the through hole and the blind hole (the hole to be filled) and the quality after hot-pressing sintering are improved; the micropore filling process adopts a dry-wet mixed filling mode, effectively improves the electric conduction and heat conduction performance of the hole to be filled, and solves the problems of holes and clamping openings.

Description

Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process
Technical Field
The invention relates to the technical field of circuit substrate filling, in particular to a compacting treatment and micropore filling process for micro-nano metal paste filling.
Background
As one of core technologies in semiconductor and integrated circuit manufacturing, a carrier filling technology can obtain a through hole and blind hole interconnection structure, and has the advantages of reducing time delay, reducing energy consumption, improving integration level and the like. At present, the realization of a through hole and blind hole interconnection structure mainly adopts an electro-coppering hole filling technology; however, such a hole filling method is prone to generate defects such as hole and pinch filling, and has problems of influencing the electric and thermal conductivity and thermal expansion coefficient mismatch of the through hole and the blind hole.
The nano metal has the advantages of low-temperature process, high-temperature service, high electric and heat conduction and the like, and is applied to the technical field of semiconductor device packaging interconnection. For example, the invention patent application with application publication number CN102651249a and the invention patent with publication number CN 109935563B both disclose a nano metal paste, specifically a copper nano metal paste, and utilize the characteristics of the metal paste in low temperature process and high temperature service, so as to effectively reduce the processing cost and realize the advantages of good conductive thermal conductivity and thermal expansion coefficient matching, etc. in the forming process of the circuit substrate electrode. In the prior art, in the process of filling through holes and blind holes of a circuit substrate and a carrier plate, a technology of taking nano metal (micro-nano metal) as a filling material does not exist; in order to make the nano metal be better applied to the field of filling the micro holes of the circuit substrate, it is necessary to provide a compact processing method to improve the efficiency and precision of the micro hole filling process.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a compacting treatment method for filling a hole with a micro-nano metal paste.
Another objective of the present invention is to provide a micro-hole filling process including the above compacting method.
The purpose of the invention is realized by the following technical scheme:
the compacting treatment method for the micro-nano metal paste filled hole is characterized by comprising the following steps:
(1) gas in the hole to be filled on the sample substrate overflows by vacuumizing, so that the micro-nano metal paste is promoted to permeate into the hole to be filled;
(2) an external instrument generates acting force on the sample substrate or the micro-nano metal paste in the hole to be filled, so that the micro-nano metal paste in the hole to be filled has the acceleration of moving towards the bottom of the hole to be filled, and the micro-nano metal paste in the hole to be filled is compacted.
According to a preferable scheme of the invention, in the step (1), the micro-nano metal paste body is coated and filled on the surface of the hole to be filled of the sample substrate, and then the hole to be filled on the sample substrate is vacuumized, so that the micro-nano metal paste body can rapidly flow into the hole to be filled under the conditions of self-tension and pressure difference.
According to a preferable scheme of the invention, in the step (1), the hole to be filled on the sample substrate is vacuumized to enable gas in the hole to be filled to overflow, and then the micro-nano metal paste is coated and filled on the surface of the hole to be filled.
According to a preferable scheme of the invention, in the step (2), the sample substrate is vertically placed in a rotary centrifugal device, and the rotary centrifugal device generates centrifugal force on the micro-nano metal paste body in the hole to be filled of the sample substrate, so that the micro-nano metal paste body in the hole to be filled is continuously compacted and compressed in the hole to be filled, and compaction of the micro-nano metal paste body is realized; the centrifugal force is parallel to the axial direction of the hole to be filled, and the centrifugal force points to the bottom of the hole to be filled.
According to a preferable scheme of the invention, in the step (2), the micro-nano metal paste body is promoted to have an acceleration moving to the bottom of the hole to be filled in a mode of generating impact load on the sample substrate, so that the micro-nano metal paste body and the hole to be filled are relatively moved, and the compaction of the micro-nano metal paste body is realized.
Preferably, the load is applied to the sample substrate by one of the following methods:
(a) the sample substrate is horizontally placed, an upward impact load is generated on the sample substrate, the micro-nano metal paste body is promoted to have an acceleration moving towards the bottom of the hole to be filled, and the micro-nano metal paste body moves towards the bottom of the hole to be filled, so that the micro-nano metal paste body is compacted;
(b) the sample substrate is horizontally placed, downward impact load is generated on the sample substrate, and then the micro-nano metal paste body is made to have acceleration moving towards the bottom of the hole to be filled through sudden stop and move towards the bottom of the hole to be filled, so that the micro-nano metal paste body is compacted.
According to a preferable scheme of the invention, in the step (2), the micro-nano metal paste body in the hole to be filled is subjected to ultrasonic treatment of asymmetric waveforms, and the acceleration of the micro-nano metal paste body moving to the bottom of the hole to be filled is larger than the acceleration of the micro-nano metal paste body in other directions, so that the compacting treatment of the micro-nano metal paste body is realized.
Preferably, when the micro-nano metal paste is subjected to ultrasonic treatment with asymmetric waveforms, the ultrasonic waveforms need to satisfy the following formula:
|f″(t)·ε[f″(t)]|max≤|f″(t)·ε[-f″(t)]|max
wherein,
Figure BDA0003348405510000031
wherein f (t) is a function of the ultrasonic waveform, t is time, ε(x)Is a step function, | f ″)(t)·ε[f″(t)]|maxRepresents the maximum value of the positive acceleration, | f ″)(t)·ε[-f″(t)]|maxThe maximum value of the negative acceleration is represented, and the positive direction is defined as pointing out of the hole to be filled, and the negative direction is defined as pointing into the hole to be filled.
Preferably, when the micro-nano metal paste is subjected to ultrasonic treatment of asymmetric waveforms, one of the following functions is selected:
(a) the coupling functions of the same amplitude and different frequencies are as follows:
Figure BDA0003348405510000032
wherein n is a natural number, T is time, T is a period,
Figure BDA0003348405510000041
a is amplitude, ω1、ω2Is the circular frequency;
(b) the coupling functions of different amplitudes and the same frequency are as follows:
Figure BDA0003348405510000042
wherein n is a natural number, T is time, T is a period,
Figure BDA0003348405510000043
A1、A2for amplitude, ω is the circular frequency.
The micropore filling process is characterized by comprising the following steps:
(1) filling the micro-nano metal paste into the hole to be filled of the sample substrate and compacting by adopting the micro-nano metal paste hole-filling compacting treatment method;
(2) drying the micro-nano metal paste on the surface of the to-be-filled hole of the sample substrate;
(3) continuously adding a micro-nano metal paste body with the strength content higher than that of the micro-nano metal paste body in the step (1) to the surface of the hole to be filled of the sample substrate to form a micro-nano metal dry-wet mixture;
(4) carrying out secondary compaction treatment on the micro-nano metal dry-wet mixture in the hole to be filled of the sample substrate;
(5) repeating the steps (2) to (4) for a plurality of times;
(6) and carrying out hot-pressing sintering on the micro-nano metal dry-wet mixture in the hole to be filled of the sample substrate to finish the micro-hole filling processing.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention realizes compacting treatment of the micro-nano metal paste on the sample substrate, so that the micro-nano metal paste filled in the hole to be filled can be more closely and compactly filled in the hole to be filled, and the compactness of the through hole and the blind hole (the hole to be filled) and the quality after hot-pressing sintering are improved.
2. According to the micropore filling process, after compaction treatment is utilized, the micro-nano metal paste with high solid content is added for multiple times to form a dry-wet mixture, so that the solution in the paste is favorably sucked out, the solid content of the micro-nano metal in the hole to be filled is improved, the density is effectively improved, the problems of holes and clamping openings are effectively solved, and the electric conduction and heat conduction performance of the hole to be filled is favorably improved.
Drawings
Fig. 1 is a schematic processing process diagram of the compacting treatment method for the micro-nano metal paste filling hole of the invention.
Fig. 2 is a schematic diagram of a micro-nano metal paste compacting treatment performed by using a rotary centrifugal device according to a first embodiment of the present invention.
Fig. 3 is a schematic diagram of a micro-nano metal paste compacting process performed by using an impact device to generate an upward impact load on a sample substrate according to a second embodiment of the present invention.
Fig. 4 is a schematic diagram of a micro-nano metal paste compacting treatment by using ultrasonic waves with asymmetric waveforms in a fourth embodiment of the present invention.
Fig. 5 is a schematic view of ultrasonic waveforms used in a fourth embodiment of the present invention.
Fig. 6 is a schematic view of ultrasonic waveforms used in a fifth embodiment of the present invention.
Fig. 7 to 9 are schematic views of a micro-hole filling process of the present invention, in which fig. 7 is a flow chart, fig. 8 is a schematic view of steps (1) to (2), and fig. 9 is a schematic view of steps (3) to (6).
Detailed Description
The present invention will be further described with reference to the following examples and drawings, but the embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1-2, the embodiment discloses a compacting treatment method for a micro-nano metal paste filling hole, which comprises the following steps:
(1) fixing and clamping the sample substrate 3 on a substrate clamp 8; the method comprises the steps of firstly coating the micro-nano metal paste body 1 on the surface of a hole 2 to be filled of a sample substrate 3, and then vacuumizing the hole 2 to be filled on the sample substrate 3, so that the micro-nano metal paste body 1 can rapidly flow into the hole 2 to be filled under the conditions of self tension and pressure difference. Certainly, the hole 2 to be filled on the sample substrate 3 may also be vacuumized to overflow the gas in the hole 2 to be filled, and then the micro-nano metal paste 1 is coated and filled on the surface of the hole 2 to be filled, so as to achieve penetration of the micro-nano metal paste 1.
(2) An external instrument generates acting force on the sample substrate 3 or the micro-nano metal paste body 1 in the hole 2 to be filled, so that the micro-nano metal paste body 1 in the hole 2 to be filled has the acceleration moving to the bottom of the hole 2 to be filled, and the micro-nano metal paste body 1 in the hole 2 to be filled is compacted. Specifically, in the embodiment, the sample substrate 3 is vertically and fixedly placed in the rotary centrifugal device, and the rotary centrifugal device 9 generates centrifugal force on the micro-nano metal paste body 1 in the hole 2 to be filled of the sample substrate 3, so that the micro-nano metal paste body 1 in the hole 2 to be filled is continuously compacted and pressed in the hole 2 to be filled, and the compaction of the micro-nano metal paste body 1 is realized; the centrifugal force is parallel to the axial direction of the hole to be filled 2 and the centrifugal force is directed to the bottom of the hole to be filled 2. The centrifugal rotation processing is carried out on the sample substrate 3 by adopting the rotary centrifugal device 9, the compacting processing of the micro-nano metal paste body 1 is realized by utilizing the generated centrifugal acceleration, the process is simple and good in effect, the damage to the sample substrate 3, the hole to be filled 2 and the surface of the micro-nano metal paste body 1 is avoided, the structure of the sample substrate 3 is protected, and the technical precision and quality of the hole filling process are improved.
The micro-nano metal paste 1 in the embodiment can be a micro-nano silver-coated copper paste; the rotational speed of the spinning centrifuge can be referenced to data 12000 rpm/min.
Example 2
Referring to fig. 1 and fig. 3, the difference between this embodiment and embodiment 1 is that in step (2), the micro-nano metal paste 1 is caused to have an acceleration moving to the bottom of the hole to be filled 2 by a manner that the impact device 10 generates an impact load on the sample substrate 3, so that the micro-nano metal paste 1 and the hole to be filled 2 move relatively, and the micro-nano metal paste 1 is compacted. In addition, the rigidity of the material of the sample substrate 3 cannot be too high, and the substrate is guaranteed not to be damaged after being impacted.
Referring to fig. 3, further, the sample substrate 3 is horizontally placed, and the impacting device 10 generates an upward impact load on the sample substrate 3 from bottom to top, so that the micro-nano metal paste 1 is accelerated to move to the bottom (downward) of the hole to be filled 2, and then moves to the bottom of the hole to be filled 2, thereby realizing the compaction of the micro-nano metal paste 1.
Example 3
The difference between the present embodiment and embodiment 2 is that the impacting device 10 generates a downward impact load on the sample substrate 3 from top to bottom, and then the micro-nano metal paste 1 is forced to have an acceleration (an inertia force of downward movement) moving to the bottom of the hole 2 to be filled by sudden stop, so as to move to the bottom of the hole 2 to be filled, thereby realizing compaction of the micro-nano metal paste 1.
Example 4
Referring to fig. 1 and 4, the difference between this embodiment and embodiments 1-3 is that, in step (2), an ultrasonic head 4 is aligned to the micro-nano metal paste 1 on the surface of the hole 2 to be filled, ultrasonic processing of an asymmetric waveform is performed on the micro-nano metal paste 1 in the hole 2 to be filled, and the acceleration of the micro-nano metal paste 1 moving to the bottom of the hole 2 to be filled is made greater than the acceleration in other directions, so as to achieve compacting processing of the micro-nano metal paste 1.
Specifically, when the micro-nano metal paste 1 is subjected to ultrasonic treatment with an asymmetric waveform, the ultrasonic waveform needs to satisfy the following formula:
|f″(t)·ε[f″(t)]|max≤|f″(t)·ε[-f″(t)]|max
wherein,
Figure BDA0003348405510000071
wherein f (t) is a function of the ultrasonic waveform, t is time, ε(x)Is a step function, x is an independent variable, | f ″(t)·ε[f″(t)]|maxRepresents the maximum value of the positive acceleration, | f ″)(t)·ε[-f″(t)]|maxRepresents the maximum value of the negative acceleration, and the positive direction is defined as pointing out of the hole to be filled 2, and the negative direction is defined as pointing into the hole to be filled 2.
Meanwhile, when the micro-nano metal paste body 1 is subjected to ultrasonic treatment of asymmetric waveforms, the following coupling functions with the same amplitude and different frequencies are selected, and the specific steps are as follows:
Figure BDA0003348405510000081
wherein n is a natural number, T is time, T is a period,
Figure BDA0003348405510000082
a is amplitude, ω1、ω2Is the circular frequency.
For the compacting processing method of this embodiment, a specific implementation is disclosed, which is specifically as follows:
the hole 2 to be filled in the sample substrate 3 is a through hole with a diameter d of 300nm and a depth h of 700 nm. The paste prepared from the nano silver-coated copper particles is used as a filler, and the particle size D of the nano silver-coated copper particles is 0.001-0.1D. Meanwhile, the selected ultrasonic waves have frequencies of 25KHz and 50KHz, respectively, and the amplitude A is 24 μm, as shown in FIG. 5.
Example 5
The difference between this embodiment and embodiment 4 is that the selected function is a coupling function with different amplitudes and the same frequency, which is specifically as follows:
Figure BDA0003348405510000083
in the formula,n is a natural number, T is time, T is a period,
Figure BDA0003348405510000084
A1、A2for amplitude, ω is the circular frequency.
For the compacting processing method of this embodiment, a specific implementation is disclosed, which is specifically as follows:
the hole 2 to be filled in the sample substrate 3 is a through hole with a diameter d of 300nm and a depth h of 700 nm. The paste prepared from the nano silver-coated copper particles is used as a filler, and the particle size D of the nano silver-coated copper particles is 0.001-0.1D. Meanwhile, the frequency of the ultrasonic wave is 30KHz, and the amplitude A is selected1Is 24 μm, A2It was 40 μm, as shown in FIG. 6.
Example 6
Referring to fig. 7 to 9, the present embodiment discloses a micro-hole filling process, which includes the following steps:
(1) and carrying out plasma cleaning treatment on the surface of the hole 2 to be filled of the sample substrate 3 to enable the micro-nano metal paste to be infiltrated with the sample substrate 3. Next, the micro-nano metal paste is filled into the hole to be filled of the sample substrate and then the compacting treatment is performed by using the method for compacting the micro-nano metal paste filled hole according to any one of embodiments 1 to 5. The to-be-filled hole 2 of the sample substrate 3 is cleaned through the plasma cleaning machine, the improvement of the wetting performance of the surface of the to-be-filled hole 2 is facilitated, so that the micro-nano metal paste body 1 can enter the to-be-filled hole 2 more easily, and the used gas during cleaning comprises argon, hydrogen, nitrogen, oxygen, compressed air, carbon tetrafluoride and the like. The hole 2 to be filled in the present embodiment includes a through hole and a blind hole.
(2) And (3) drying the micro-nano metal paste body 1 on the surface of the hole 2 to be filled of the sample substrate 3, as shown in fig. 8. The micro-nano metal paste body 1 on the surface of the hole 2 to be filled is dried by adopting laser, heat radiation, hot air, heating or the combination of the above modes and vacuum. Meanwhile, in the drying process, the control temperature range is as follows: 25-100 ℃. Through drying treatment, the solution of the micro-nano metal paste body 1 positioned at the top in the hole 2 to be filled is evaporated, and the solid content of the position is improved, so that when the micro-nano metal paste body with the solid content of micro-nano metal particles or the micro-nano metal paste body with the solid content higher is continuously filled and coated in the follow-up process, the micro-nano metal paste body is more easily fused with the micro-nano metal paste body on the surface in the hole 2 to be filled, the solution of the original micro-nano metal paste body positioned below in the hole 2 to be filled can be more quickly and effectively absorbed upwards, the solution of the micro-nano metal paste body in the hole 2 to be filled is effectively reduced, and the density of the follow-up hot-pressing sintering process is improved.
(3) And (3) continuously adding a micro-nano metal paste body 5 with the strength content higher than that of the micro-nano metal paste body 1 in the step (1) to the surface of the hole 2 to be filled of the sample substrate 3 to form a micro-nano metal dry-wet mixture 6, as shown in fig. 9. Specifically, micro-nano metal paste 5 with high solid content can be added, and micro-nano metal particle solid with 100% solid content can also be added. Therefore, on one hand, the micro-nano metal paste with higher dryness can be used for absorbing the moisture of the original micro-nano metal paste, and the moisture at the bottom of the hole 2 to be filled is upwards absorbed, so that the dryness is improved, and the moisture is reduced; on the other hand, the micro-nano metal particles can be continuously filled downwards into the hole 2 to be filled, so that the solid content of the micro-nano metal paste in the hole 2 to be filled is effectively improved, namely the dry metal powder has higher content, high-quality filling is realized, the defects of hole and clamping opening filling and the like are avoided, and the structural stability after filling and the final finished product quality are favorably improved during subsequent hot-pressing sintering.
(4) And (3) carrying out secondary compacting treatment on the micro-nano metal dry-wet mixture 6 in the hole to be filled of the sample substrate, as shown in fig. 9. Specifically, the surface of the micro-nano metal paste dry-wet mixture 6 in the hole 2 to be filled is pressed (stamping can be adopted) through the rolling device 11, and simultaneously vibration is generated, so that the micro-nano metal paste 5 outside the hole 2 to be filled is promoted to be extruded into the hole 2 to be filled, and the micro-nano metal paste dry-wet mixture 6 in the hole 2 to be filled is compacted; before the pressing, the filled sample base material may be coated with graphite paper 7, and a downward pressure perpendicular to the surface of the sample base plate 3 is applied to the coated filled sample base plate 3, as shown in fig. 9. The filling is realized by adopting a vibration and pressure applying mode, the method is simple and convenient, the high-quality and dense filling can be realized, and the defects of hole and clamping opening filling and the like can not occur; in addition, the filling process has high hole filling efficiency, stable structure after filling and better quality.
In addition, the secondary compacting treatment in this embodiment may also adopt a compacting treatment method for filling the micro-nano metal paste hole in any one of embodiments 1 to 5.
(5) Repeating the steps (2) to (4) for a plurality of times.
(6) Carrying out hot-pressing sintering on the micro-nano metal dry-wet mixture 6 in the hole 2 to be filled of the sample substrate 3, wherein the temperature control range is as follows: and (3) forming sintering ribs on the micro-nano metal particles at the temperature of below 300 ℃ to finish the hole filling processing of the sample substrate 3. Through repeating the steps (2) to (4) for multiple times, namely, the solid of the micro-nano metal particles with 100% of solid content or the micro-nano metal paste 5 with higher solid content is increased by a small amount for multiple times, so that the filler in the hole to be filled 2 is gradually compacted, the components in the hole are also changed, the solid content of the micro-nano metal is gradually increased, the micro-nano metal with high solid content is favorably filled in the hole to be filled 2, the problems of holes and clamping mouths of the hole to be filled 2 after hot-pressing sintering are effectively solved, the electric conduction and heat conduction performance is effectively improved, and the hole filling quality is obviously improved.
In this embodiment, the micro-nano metal paste includes micro-nano metal particles and an alcohol or alcohol-based solution; the particle size of the micro-nano metal particles is 5nm-100 mu m, and the diameter of the micro-nano metal particles in the micro-nano metal paste body is smaller than that of the hole to be filled 2, so that the metal paste body extends into the hole to be filled 2, and the diameter of the micro-nano metal particles in the micro-nano metal paste body is recommended to be 0.01-0.001 times of that of the hole to be filled 2; the micro-nano metal paste can be a micro-nano silver-coated copper paste. In the embodiment, the micro-nano metal particles can adopt high-conductivity low-yield-strength nano metal powder, and the micro-nano metal particles can adopt 2-5-level particles with the particle size of 5nm-100 μm; the alcohol or alcohol-based solution comprises terpineol, ethylene glycol, n-butanol and ethanol. Of course, the components and the manufacturing method of the micro-nano metal paste can be referred to the prior art, for example, the invention patent application with the application publication number of CN102651249A, copper nano paste, the forming method thereof, and the method for forming the electrode by using the copper nano paste, and the invention patent with the publication number of CN 109935563B, multi-size mixed nano particle paste and the preparation method thereof, and the like.
In addition, the coating of the micro-nano metal paste is finished by means of spot coating, printing or printing. Of course, other coating and embedding methods in the prior art can be adopted according to actual conditions and requirements.
The material of the sample substrate 3 or the hole 2 to be filled in this embodiment may be: glass, silicon, ceramic, PI or FR 4.
The present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents and are included in the scope of the present invention.

Claims (10)

1. The compacting treatment method for the micro-nano metal paste filled hole is characterized by comprising the following steps:
(1) gas in the hole to be filled on the sample substrate overflows by vacuumizing, so that the micro-nano metal paste is promoted to permeate into the hole to be filled;
(2) an external instrument generates acting force on the sample substrate or the micro-nano metal paste in the hole to be filled, so that the micro-nano metal paste in the hole to be filled has the acceleration of moving towards the bottom of the hole to be filled, and the micro-nano metal paste in the hole to be filled is compacted.
2. The method for compacting the micro-nano metal paste filling hole according to claim 1, wherein in the step (1), the micro-nano metal paste is coated and filled on the surface of the sample substrate to be filled, and then the hole to be filled on the sample substrate is vacuumized, so that the micro-nano metal paste can rapidly flow into the hole to be filled under the conditions of self-tension and pressure difference.
3. The method for compacting the micro-nano metal paste filling hole according to claim 1, wherein in the step (1), the hole to be filled on the sample substrate is vacuumized to allow gas in the hole to be filled to overflow, and then the micro-nano metal paste is coated and filled on the surface of the hole to be filled.
4. The method for compacting the micro-nano metal paste filling hole according to claim 1, wherein in the step (2), the sample substrate is vertically placed in a rotary centrifugal device, and the rotary centrifugal device generates centrifugal force on the micro-nano metal paste in the hole to be filled of the sample substrate, so that the micro-nano metal paste in the hole to be filled is continuously compacted and pressed in the hole to be filled, and compacting of the micro-nano metal paste is realized; the centrifugal force is parallel to the axial direction of the hole to be filled, and the centrifugal force points to the bottom of the hole to be filled.
5. The method for compacting the micro-nano metal paste filling hole according to claim 1, wherein in the step (2), the micro-nano metal paste is caused to have an acceleration moving to the bottom of the hole to be filled by generating an impact load on the sample substrate, so that the micro-nano metal paste and the hole to be filled move relatively, and the micro-nano metal paste is compacted.
6. The method for compacting micro-nano metal paste filling holes according to claim 5, wherein the method for generating load on the sample substrate is realized by one of the following methods:
(a) the sample substrate is horizontally placed, an upward impact load is generated on the sample substrate, the micro-nano metal paste body is promoted to have an acceleration moving towards the bottom of the hole to be filled, and the micro-nano metal paste body moves towards the bottom of the hole to be filled, so that the micro-nano metal paste body is compacted;
(b) the sample substrate is horizontally placed, downward impact load is generated on the sample substrate, and then the micro-nano metal paste body is made to have acceleration moving towards the bottom of the hole to be filled through sudden stop and move towards the bottom of the hole to be filled, so that the micro-nano metal paste body is compacted.
7. The method for compacting the micro-nano metal paste filling hole according to claim 1, wherein in the step (2), the micro-nano metal paste to be filled is subjected to ultrasonic treatment with asymmetric waveforms, and the acceleration of the micro-nano metal paste moving to the bottom of the hole to be filled is greater than the acceleration in other directions, so that the micro-nano metal paste is compacted.
8. The method for compacting the micro-nano metal paste filling hole according to claim 7, wherein when the micro-nano metal paste is subjected to ultrasonic treatment with an asymmetric waveform, the ultrasonic waveform needs to satisfy the following formula:
|f″(t)·ε[f″(t)]|max≤|f″(t)·ε[-f″(t)]|max
wherein,
Figure FDA0003348405500000021
wherein f (t) is a function of the ultrasonic waveform, t is time, ε(x)Is a step function, | f ″)(t)·ε[f″(t)]|maxRepresents the maximum value of the positive acceleration, | f ″)(t)·ε[-f″(t)]|maxThe maximum value of the negative acceleration is represented, and the positive direction is defined as pointing out of the hole to be filled, and the negative direction is defined as pointing into the hole to be filled.
9. The method for compacting micro-nano metal paste filling holes according to claim 8, wherein when the micro-nano metal paste is subjected to ultrasonic processing of asymmetric waveforms, one of the following f (t) functions is selected:
(a) the coupling functions of the same amplitude and different frequencies are as follows:
Figure FDA0003348405500000031
wherein n is a natural number, T is time, T is a period,
Figure FDA0003348405500000032
a is amplitude, ω1、ω2Is the circular frequency;
(b) the coupling functions of different amplitudes and the same frequency are as follows:
Figure FDA0003348405500000033
wherein n is a natural number, T is time, T is a period,
Figure FDA0003348405500000034
A1、A2for amplitude, ω is the circular frequency.
10. The micropore filling process is characterized by comprising the following steps:
(1) filling the micro-nano metal paste into the hole to be filled of the sample substrate and carrying out compaction treatment by adopting the micro-nano metal paste filling compaction treatment method according to any one of claims 1 to 9;
(2) drying the micro-nano metal paste on the surface of the to-be-filled hole of the sample substrate;
(3) continuously adding a micro-nano metal paste body with the strength content higher than that of the micro-nano metal paste body in the step (1) to the surface of the hole to be filled of the sample substrate to form a micro-nano metal dry-wet mixture;
(4) carrying out secondary compaction treatment on the micro-nano metal dry-wet mixture in the hole to be filled of the sample substrate;
(5) repeating the steps (2) to (4) for a plurality of times;
(6) and carrying out hot-pressing sintering on the micro-nano metal dry-wet mixture in the hole to be filled of the sample substrate to finish the micro-hole filling processing.
CN202111335833.XA 2021-11-11 2021-11-11 Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process Pending CN114093771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111335833.XA CN114093771A (en) 2021-11-11 2021-11-11 Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111335833.XA CN114093771A (en) 2021-11-11 2021-11-11 Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process

Publications (1)

Publication Number Publication Date
CN114093771A true CN114093771A (en) 2022-02-25

Family

ID=80300034

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111335833.XA Pending CN114093771A (en) 2021-11-11 2021-11-11 Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process

Country Status (1)

Country Link
CN (1) CN114093771A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115551234A (en) * 2022-09-29 2022-12-30 高德(江苏)电子科技股份有限公司 Preparation method of ultrathin high-heat-dissipation circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115551234A (en) * 2022-09-29 2022-12-30 高德(江苏)电子科技股份有限公司 Preparation method of ultrathin high-heat-dissipation circuit board

Similar Documents

Publication Publication Date Title
CN104716312B (en) Silicon-carbon composite material for lithium ion battery, preparation method and application of silicon-carbon composite material
CN105932245B (en) A kind of high compacted density silicon-carbon cathode material and its preparation method and application
CN114093771A (en) Compacting treatment method for micro-nano metal paste filling hole and micro-hole filling process
WO2020199638A1 (en) Multi-sized nanoparticle mixed metal film and manufacturing method therefor
CN107180666B (en) A kind of graphene conductive powder and preparation method for being exclusively used in promoting cable conductive
CN104036876B (en) A kind of preparation method of high temperature copper electric slurry
CN114538899B (en) Preparation method of 996 aluminum oxide ceramic substrate
CN105047255A (en) Crystalline silicon solar cell aluminum paste with high disperse graphene content and preparation method of crystalline silicon solar cell aluminum paste
CN108346793B (en) Preparation method and application of nano-silicon with porous structure
JP2017038091A (en) Manufacturing method of substrate for interposer
CN112366095A (en) Preparation method of horizontal ordered carbon nanotube array micro supercapacitor
CN114501828A (en) Preparation method of diamond printed circuit board with efficient heat dissipation function
WO2015058113A1 (en) Porous carbon electrodes for energy storage applications
CN107267938A (en) A kind of novel oxidation-resistant Nanometer Copper soldering paste and its preparation method and application
CN113983842A (en) Composite liquid absorption core and manufacturing method and application thereof
US9916938B2 (en) Porous carbon electrodes for energy storage applications
CN111525086A (en) Preparation method of lithium battery electrode based on laser shock technology
CN104465131B (en) Preparing method of graphene nanoribbon and aluminum-based supercapacitor collector electrode
CN104445443A (en) Method for preparing cobaltous oxide electrode with nanosheet structure
CN114316868B (en) Heat-conducting glue and preparation method and application thereof
CN114051332B (en) Micro-nano metal hole filling method for dry-wet mixed filling
CN115353096A (en) Supercapacitor electrode material based on porous graphene
CN114005963A (en) Modification method of graphite negative plate of lithium ion battery
CN110379768B (en) TSV manufacturing method based on graphene slurry filling
CN114361416A (en) Silicon-based composite material, lithium ion battery and preparation method and application thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination