CN114093673A - Leadless embedded tantalum electrolytic capacitor and preparation method thereof - Google Patents
Leadless embedded tantalum electrolytic capacitor and preparation method thereof Download PDFInfo
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- CN114093673A CN114093673A CN202010858143.1A CN202010858143A CN114093673A CN 114093673 A CN114093673 A CN 114093673A CN 202010858143 A CN202010858143 A CN 202010858143A CN 114093673 A CN114093673 A CN 114093673A
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 208
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 117
- 239000003990 capacitor Substances 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052709 silver Inorganic materials 0.000 claims abstract description 31
- 239000004332 silver Substances 0.000 claims abstract description 31
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000005476 soldering Methods 0.000 claims abstract description 28
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 12
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims description 31
- 239000002002 slurry Substances 0.000 claims description 30
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 16
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 238000002791 soaking Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 229960004063 propylene glycol Drugs 0.000 claims description 7
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920000128 polypyrrole Polymers 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 3
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 claims description 2
- 241000723346 Cinnamomum camphora Species 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 229960000846 camphor Drugs 0.000 claims description 2
- 229930008380 camphor Natural products 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229940068984 polyvinyl alcohol Drugs 0.000 claims description 2
- 150000003384 small molecules Chemical class 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 16
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a leadless embedded tantalum electrolytic capacitor and a preparation method thereof, wherein the leadless embedded tantalum electrolytic capacitor comprises a tantalum sheet, a tantalum core, a silver paste layer and a soldering tin layer; the tantalum sheet is provided with an opening, a tantalum core is arranged inside the opening, and a tantalum pentoxide layer, a conductive polymer layer and a carbon layer are sequentially arranged on the surface of the tantalum core; the soldering tin layer is connected with the carbon layer through the silver paste layer. The capacitor is thin, has the thickness of 0.05-0.2 mm, has considerable capacitance density, and has smaller inductance.
Description
Technical Field
The invention belongs to the technical field of embedded electronic components and relates to a leadless embedded tantalum electrolytic capacitor and a preparation method thereof.
Background
A typical electronic product has passive devices that occupy around 80% of the circuit board space, 60% of which are capacitive devices. The realization of high integration and miniaturization of electronic equipment requires smaller-sized passive devices, and the miniaturized design of capacitor devices will be more meaningful. The capacitors can be classified into three types according to different functions: decoupling, bypass, energy storage, capacitance are the most widely used devices in electromagnetic compatibility (EMC) design of PCBs. When the capacitor is assembled on a PCB board, parasitic inductance and lead resistance are introduced, at least one decoupling capacitor is required to be arranged at each power supply pin of the IC to reduce parasitic impedance, but the surface mounting capacitor needs lead connection, which can cause the practical working effect of the capacitor to be poor. The ESL (equivalent series inductance) of the capacitor, together with the capacitance value, determines the frequency range of the capacitor, and a smaller ESL will be more favorable for the use of the capacitor in a higher frequency range. The tantalum capacitor on the PCB is widely used due to its large capacitance and stable electrical properties, but its large size and its internal tantalum wire leads limit its application to miniaturized electronic devices.
Disclosure of Invention
In order to solve the technical problems in the background art, the present invention provides a leadless embedded tantalum electrolytic capacitor and a method for manufacturing the same.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: in one aspect, the invention provides a leadless embedded tantalum electrolytic capacitor, which comprises a tantalum sheet, a tantalum core, a silver paste layer and a soldering tin layer;
the tantalum sheet is provided with an opening, a tantalum core is arranged inside the opening, and a tantalum pentoxide layer, a conductive polymer layer and a carbon layer are sequentially arranged on the surface of the tantalum core;
the soldering tin layer is connected with the carbon layer through the silver paste layer.
Further, the tantalum sheet is integral with the tantalum core.
Further, the conductive polymer layer is a poly 3, 4-ethylenedioxythiophene layer or a polypyrrole layer.
Further, the length of the tantalum sheet is 2-10 mm, the width of the tantalum sheet is 2-10 mm, and the thickness of the tantalum sheet is 0.05-0.2 mm.
Furthermore, the area of the openings on the tantalum sheet accounts for 10-80% of the total surface area of the tantalum sheet (1).
Further, the open holes are communicated up and down.
Further, the number of the open pores is 1-16.
Further, the opening is of any shape.
Further, the tantalum core is prepared by using tantalum powder with the particle size of 0.4-5 μm.
Further, the thickness of the silver paste layer is 5% -10% of that of the tantalum core, and the thickness of the soldering tin layer is 5% -10% of that of the tantalum core.
Furthermore, the anode leading-out end of the tantalum core is a tantalum sheet, and the cathode leading-out end of the tantalum electrolytic capacitor is a silver paste layer and a soldering tin layer.
Further, the size of the tantalum core is matched with the opening, namely the thickness of the tantalum core is the same as the depth of the opening, and the geometric shape of the tantalum core is the same as that of the opening.
In another aspect, the present invention provides a method for manufacturing any one of the above leadless embedded tantalum electrolytic capacitors, comprising the following steps:
1) mixing tantalum powder and organic micromolecules into tantalum slurry;
2) processing holes on the tantalum sheet;
3) uniformly filling the tantalum slurry into the open pores of the tantalum sheet, and drying; pre-burning and sintering after drying; the tantalum sheet and the tantalum slurry are sintered into a whole at high temperature;
4) performing an energizing process on the sintered tantalum core, namely placing the tantalum core in phosphoric acid electrolyte, and applying direct current voltage to generate a tantalum pentoxide oxide layer on the surface of the tantalum core;
5) coating the sintered tantalum core, namely soaking the tantalum core in a conductive polymer solution and drying the tantalum core, and repeatedly attaching the conductive polymer to the surface of the tantalum pentoxide oxide layer;
6) soaking the tantalum core subjected to film coating in carbon slurry and drying;
7) adopting a silver paste layer to stick the soldering tin layer on the surface of the carbon layer; the silver paste layer and the soldering tin layer are used for leading out the cathode;
wherein, the steps of 1) and 2) have no sequence.
Further, the organic small molecule is selected from one or a combination of several of low molecular weight polyvinyl alcohol, 1, 2-propylene glycol and camphor;
preferably, the mass fraction of the tantalum powder in the tantalum slurry is 70-80%;
preferably, the particle size of the tantalum powder is 0.4-5 μm;
preferably, the length of the tantalum sheet is 2-10 mm, the width of the tantalum sheet is 2-10 mm, and the thickness of the tantalum sheet is 0.05-0.2 mm;
preferably, the area of the openings on the tantalum sheet accounts for 10-80% of the total surface area of the tantalum sheet;
preferably, the number of the open holes is 1-16;
preferably, the opening is of any shape;
preferably, the drying temperature in 3) is 50-100 ℃;
preferably, the pre-sintering temperature is 100-400 ℃, and the time is 0.5-1 hour;
preferably, the sintering temperature is 1200-1600 ℃, and the time is 1-10 minutes;
preferably, the mass fraction of the phosphoric acid electrolyte is 0.05-1%;
preferably, the direct current voltage is 5-90V;
preferably, the conductive polymer solution is poly 3, 4-ethylenedioxythiophene or polypyrrole;
preferably, the drying temperature in the step 5) is 80-120 ℃;
preferably, the drying temperature in 6) is 150 ℃, and the drying time is 1-2 hours;
preferably, the thickness of the silver paste layer is 5% -10% of that of the tantalum core, and the thickness of the soldering tin layer is 5% -10% of that of the tantalum core.
The invention has the beneficial effects that: according to the method, the tantalum powder and the tantalum sheet are sintered together to form the thin tantalum core to manufacture the tantalum electrolytic capacitor, the capacitance manufactured by the method is thin, the thickness of the capacitor is 0.05-0.2 mm, and the capacitor can be embedded into a PCB; has considerable capacitance density of 50nF/mm under the condition of 8V oxidation voltage2～1200nF/mm2(ii) a The inductance of the inductor is smaller than 3.2 nH.
Drawings
FIG. 1 is a schematic structural view of a leadless embedded tantalum electrolytic capacitor according to the present invention;
the solder paste comprises 1 tantalum sheet, 2 tantalum core, 3 silver paste layer and 4 solder layer.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, specific embodiments accompanied with figures are described in detail below, but the present invention is not to be construed as limiting the implementable range thereof.
Example 1
In this example, the performance of 4 leadless embedded tantalum electrolytic capacitors manufactured under the same conditions is shown.
The preparation method of the leadless embedded tantalum electrolytic capacitor comprises the following steps:
1) mixing tantalum powder with the particle size of 0.4-1 micron and 1, 2-propylene glycol according to the mass ratio of 4: 1 preparing tantalum slurry for later use;
2) processing holes on the tantalum sheet, wherein the holes are communicated up and down; the side length of the tantalum sheet is 10 x 10mm, the thickness of the tantalum sheet is 50 microns, the area of an opening on the surface of the tantalum sheet is 28%, the opening is circular, the diameter of the opening is 3 mm, and the number of the openings is 4;
3) placing a tantalum sheet die on a ceramic substrate made of aluminum oxide, uniformly coating tantalum slurry in a circular opening, drying at 100 ℃, pre-sintering at 300 ℃ for 30 minutes, and sintering at 1300 ℃ for 2 minutes in a high-temperature furnace; the tantalum sheet and the tantalum slurry are sintered into a whole at high temperature;
4) performing an energizing process on the sintered tantalum core, namely placing the tantalum core in phosphoric acid electrolyte, and applying 8V direct current voltage to generate a tantalum pentoxide dielectric layer on the surface of the tantalum core; then cleaning and drying;
5) coating the energized tantalum core, namely soaking the tantalum core in an aqueous solution of a conductive polymer poly (3, 4-ethylenedioxythiophene), drying at 120 ℃, and repeatedly attaching enough conductive polymer on the surface of the tantalum core for many times;
6) the tantalum core coated with the coating is dipped in carbon slurry and dried at 150 ℃ for 1 hour.
7) The cathode is led out by using silver paste and soldering tin, namely, the soldering tin layer is adhered to the surface of the carbon layer by using the silver paste layer; wherein the thickness of the silver paste layer is 5 microns, and the thickness of the soldering tin layer is 5 microns. The capacitance and inductance values were then tested at 100 Hz. The test results were as follows:
example 2
In this example, the performance of 4 leadless embedded tantalum electrolytic capacitors manufactured under the same conditions is shown.
The preparation method of the leadless embedded tantalum electrolytic capacitor comprises the following steps:
1) mixing tantalum powder with the particle size of 1-3 microns and 1, 2-propylene glycol according to a mass ratio of 4: 1 preparing tantalum slurry for later use;
2) processing holes on the tantalum sheet, wherein the holes are communicated up and down; the side length of the tantalum sheet is 10 x 10mm, the thickness of the tantalum sheet is 50 microns, the area of an opening on the surface of the tantalum sheet is 28%, the opening is circular, the diameter of the opening is 3 mm, and the number of the openings is 4;
3) placing a tantalum sheet die on a ceramic substrate made of aluminum oxide, uniformly coating tantalum slurry in a circular opening, drying at 100 ℃, pre-sintering at 300 ℃ for 30 minutes, and sintering at 1300 ℃ for 2 minutes in a high-temperature furnace; the tantalum sheet and the tantalum slurry are sintered into a whole at high temperature;
4) performing an energizing process on the sintered tantalum core, namely placing the tantalum core in phosphoric acid electrolyte, and applying 8V direct current voltage to generate a tantalum pentoxide dielectric layer on the surface of the tantalum core; then cleaning and drying;
5) coating the energized tantalum core, namely soaking the tantalum core in an aqueous solution of a conductive polymer poly (3, 4-ethylenedioxythiophene), drying at 120 ℃, and repeatedly attaching enough conductive polymer on the surface of the tantalum core for many times;
6) the tantalum core coated with the coating is dipped in carbon slurry and dried at 150 ℃ for 1 hour.
7) The cathode is led out by using silver paste and soldering tin, namely, the soldering tin layer is adhered to the surface of the carbon layer by using the silver paste layer; wherein the thickness of the silver paste layer is 5 microns, and the thickness of the soldering tin layer is 5 microns. The capacitance and inductance values were then tested at 100 Hz. The test results were as follows:
example 3
In this example, the performance of 4 leadless embedded tantalum electrolytic capacitors manufactured under the same conditions is shown.
The preparation method of the leadless embedded tantalum electrolytic capacitor comprises the following steps:
1) mixing tantalum powder with the particle size of 3-5 microns and 1, 2-propylene glycol according to a mass ratio of 4: 1 preparing tantalum slurry for later use;
2) processing holes on the tantalum sheet, wherein the holes are communicated up and down; the side length of the tantalum sheet is 10 x 10mm, the thickness of the tantalum sheet is 50 microns, the area of an opening on the surface of the tantalum sheet is 28%, the opening is circular, the diameter of the opening is 3 mm, and the number of the openings is 4;
3) placing a tantalum sheet die on a ceramic substrate made of aluminum oxide, uniformly coating tantalum slurry in a circular opening, drying at 100 ℃, pre-sintering at 300 ℃ for 30 minutes, and sintering at 1300 ℃ for 2 minutes in a high-temperature furnace; the tantalum sheet and the tantalum slurry are sintered into a whole at high temperature;
4) performing an energizing process on the sintered tantalum core, namely placing the tantalum core in phosphoric acid electrolyte, and applying 8V direct current voltage to generate a tantalum pentoxide dielectric layer on the surface of the tantalum core; then cleaning and drying;
5) coating the energized tantalum core, namely soaking the tantalum core in an aqueous solution of a conductive polymer poly (3, 4-ethylenedioxythiophene), drying at 120 ℃, and repeatedly attaching enough conductive polymer on the surface of the tantalum core for many times;
6) the tantalum core coated with the coating is dipped in carbon slurry and dried at 150 ℃ for 1 hour.
7) The cathode is led out by using silver paste and soldering tin, namely, the soldering tin layer is adhered to the surface of the carbon layer by using the silver paste layer; wherein the thickness of the silver paste layer is 5 microns, and the thickness of the soldering tin layer is 5 microns. The capacitance and inductance values were then tested at 100 Hz. The test results were as follows:
example 4
In this example, the performance of 4 leadless embedded tantalum electrolytic capacitors manufactured under the same conditions is shown.
The preparation method of the leadless embedded tantalum electrolytic capacitor comprises the following steps:
1) mixing tantalum powder with the particle size of 3-5 microns and 1, 2-propylene glycol according to a mass ratio of 4: 1 preparing tantalum slurry for later use;
2) processing holes on the tantalum sheet, wherein the holes are communicated up and down; wherein the side length of the tantalum sheet is 10 x 10mm, the thickness of the tantalum sheet is 50 microns, the area of the opening on the surface of the tantalum sheet is 28%, the opening is circular, the diameter of the opening is 1.5 mm, and the number of the openings is 16;
3) placing a tantalum sheet die on a ceramic substrate made of aluminum oxide, uniformly coating tantalum slurry in a circular opening, drying at 100 ℃, pre-sintering at 300 ℃ for 30 minutes, and sintering at 1300 ℃ for 2 minutes in a high-temperature furnace; the tantalum sheet and the tantalum slurry are sintered into a whole at high temperature;
4) performing an energizing process on the sintered tantalum core, namely placing the tantalum core in phosphoric acid electrolyte, and applying 8V direct current voltage to generate a tantalum pentoxide dielectric layer on the surface of the tantalum core; then cleaning and drying;
5) coating the energized tantalum core, namely soaking the tantalum core in an aqueous solution of a conductive polymer poly (3, 4-ethylenedioxythiophene), drying at 120 ℃, and repeatedly attaching enough conductive polymer on the surface of the tantalum core for many times;
6) the tantalum core coated with the coating is dipped in carbon slurry and dried at 150 ℃ for 1 hour.
7) The cathode is led out by using silver paste and soldering tin, namely, the soldering tin layer is adhered to the surface of the carbon layer by using the silver paste layer; wherein the thickness of the silver paste layer is 5 microns, and the thickness of the soldering tin layer is 5 microns. The capacitance and inductance values were then tested at 100 Hz. The test results were as follows:
example 5
In this example, the performance of 4 leadless embedded tantalum electrolytic capacitors manufactured under the same conditions is shown.
The preparation method of the leadless embedded tantalum electrolytic capacitor comprises the following steps:
1) mixing tantalum powder with the particle size of 0.4-1 micron and 1, 2-propylene glycol according to the mass ratio of 4: 1 preparing tantalum slurry for later use;
2) processing holes on the tantalum sheet, wherein the holes are communicated up and down; wherein the side length of the tantalum sheet is 10 x 10mm, the thickness is 200 microns, the area of the opening on the surface of the tantalum sheet accounts for 28%, the opening is circular, the diameter is 3 mm, and the number of the openings is 4;
3) placing a tantalum sheet die on a ceramic substrate made of aluminum oxide, uniformly coating tantalum slurry in a circular opening, drying at 100 ℃, pre-sintering at 300 ℃ for 30 minutes, and sintering at 1250 ℃ for 5 minutes in a high-temperature furnace; the tantalum sheet and the tantalum slurry are sintered into a whole at high temperature;
4) performing an energizing process on the sintered tantalum core, namely placing the tantalum core in phosphoric acid electrolyte, and applying 8V direct current voltage to generate a tantalum pentoxide dielectric layer on the surface of the tantalum core; then cleaning and drying;
5) coating the energized tantalum core, namely soaking the tantalum core in an aqueous solution of a conductive polymer poly (3, 4-ethylenedioxythiophene), drying at 120 ℃, and repeatedly attaching enough conductive polymer on the surface of the tantalum core for many times;
6) the tantalum core coated with the coating is dipped in carbon slurry and dried at 150 ℃ for 1 hour.
7) The cathode is led out by using silver paste and soldering tin, namely, the soldering tin layer is adhered to the surface of the carbon layer by using the silver paste layer; wherein the thickness of the silver paste layer is 5 microns, and the thickness of the soldering tin layer is 5 microns. The capacitance and inductance values were then tested at 100 Hz. The test results were as follows:
the above description is only a specific embodiment of the present invention, and not all embodiments, and any equivalent modifications of the technical solutions of the present invention, which are made by those skilled in the art through reading the present specification, are covered by the claims of the present invention.
Claims (10)
1. A leadless embedded tantalum electrolytic capacitor is characterized by comprising a tantalum sheet (1), a tantalum core (2), a silver paste layer (3) and a soldering tin layer (4);
the tantalum sheet (1) is provided with an opening, a tantalum core (2) is arranged inside the opening, and a tantalum pentoxide layer, a conductive polymer layer and a carbon layer are sequentially arranged on the surface of the tantalum core (2);
the soldering tin layer (4) is connected with the carbon layer through the silver paste layer (3).
2. The leadless embedded tantalum electrolytic capacitor of claim 1 wherein the conductive polymer layer is a layer of poly 3, 4-ethylenedioxythiophene or polypyrrole.
3. The leadless embedded tantalum electrolytic capacitor of claim 1, wherein the tantalum chip (1) has a length of 2 to 10mm, a width of 2 to 10mm, and a thickness of 0.05 to 0.2 mm;
preferably, the area of the openings on the tantalum sheet (1) accounts for 10-80% of the total surface area of the tantalum sheet (1).
4. The leadless embedded tantalum electrolytic capacitor of claim 1, wherein the number of the openings is 1-16.
5. The leadless embedded tantalum electrolytic capacitor of claim 1 wherein the opening is of any shape.
6. The leadless embedded tantalum electrolytic capacitor of claim 1 wherein the tantalum core (2) is prepared by using tantalum powder having a particle size of 0.4 μm to 5 μm.
7. The leadless embedded tantalum electrolytic capacitor of claim 1, wherein the silver paste layer (3) has a thickness of 5% to 10% of the thickness of the tantalum core (2), and the solder layer (4) has a thickness of 5% to 10% of the thickness of the tantalum core (2).
8. The leadless embedded tantalum electrolytic capacitor of claim 1 wherein the anode lead of the tantalum core (2) is a tantalum sheet (1) and the cathode lead of the tantalum electrolytic capacitor is a silver paste layer (3) and a solder layer (4).
9. The method for producing a leadless embedded tantalum electrolytic capacitor as claimed in any one of claims 1 to 8, comprising the steps of:
1) mixing tantalum powder and organic micromolecules into tantalum slurry;
2) processing holes on the tantalum sheet (1);
3) uniformly filling the tantalum slurry into the open pores of the tantalum sheet (1), and drying; pre-burning and sintering after drying; the tantalum sheet (1) and the tantalum slurry are sintered into a whole at high temperature;
4) performing an energizing process on the sintered tantalum core (2), namely placing the tantalum core in phosphoric acid electrolyte, and applying direct current voltage to generate a tantalum pentoxide oxide layer on the surface of the tantalum core;
5) performing a coating process on the sintered tantalum core (2), namely soaking the tantalum core in a conductive polymer solution and drying the tantalum core, and repeatedly enabling the conductive polymer to be uniformly attached to the surface of the tantalum pentoxide oxide layer;
6) soaking the tantalum core subjected to film coating in carbon slurry and drying;
7) the silver paste layer (3) is adopted to stick the soldering tin layer (4) on the surface of the carbon layer;
wherein, the steps of 1) and 2) have no sequence.
10. The preparation method of claim 9, wherein the organic small molecule is selected from one or more of low molecular weight polyvinyl alcohol, 1, 2-propylene glycol and camphor;
preferably, the mass fraction of the tantalum powder in the tantalum slurry is 70-80%;
preferably, the particle size of the tantalum powder is 0.4-5 μm;
preferably, the tantalum sheet (1) is 2-10 mm long, 2-10 mm wide and 0.05-0.2 mm thick;
preferably, the area of the openings on the tantalum sheet (1) accounts for 10-80% of the total surface area of the tantalum sheet (1);
preferably, the number of the open holes is 1-16;
preferably, the opening is of any shape;
preferably, the drying temperature in 3) is 50-100 ℃;
preferably, the pre-sintering temperature is 100-400 ℃, and the time is 0.5-1 hour;
preferably, the sintering temperature is 1200-1600 ℃, and the time is 1-10 minutes;
preferably, the mass fraction of the phosphoric acid electrolyte is 0.05-1%;
preferably, the direct current voltage is 5-90V;
preferably, the conductive polymer solution is poly 3, 4-ethylenedioxythiophene or polypyrrole;
preferably, the drying temperature in the step 5) is 80-120 ℃;
preferably, the drying temperature in 6) is 150 ℃, and the drying time is 1-2 hours;
preferably, the thickness of the silver paste layer (3) is 5% -10% of the thickness of the tantalum core (2), and the thickness of the soldering tin layer (4) is 5% -10% of the thickness of the tantalum core (2).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145686A (en) * | 1995-03-03 | 1997-03-19 | 罗姆股份有限公司 | Solid electrolytic capacitor and its mfg. method |
| CN101176173A (en) * | 2005-05-17 | 2008-05-07 | 维莎斯普拉格公司 | Surface mount capacitor and method of making the same |
| US20090235499A1 (en) * | 2008-03-18 | 2009-09-24 | Fujitsu Limited | Tantalum capacitor |
-
2020
- 2020-08-24 CN CN202010858143.1A patent/CN114093673A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145686A (en) * | 1995-03-03 | 1997-03-19 | 罗姆股份有限公司 | Solid electrolytic capacitor and its mfg. method |
| CN101176173A (en) * | 2005-05-17 | 2008-05-07 | 维莎斯普拉格公司 | Surface mount capacitor and method of making the same |
| US20090235499A1 (en) * | 2008-03-18 | 2009-09-24 | Fujitsu Limited | Tantalum capacitor |
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