CN114088663A - Terahertz sensor based on symmetrical protection type continuum bound state - Google Patents
Terahertz sensor based on symmetrical protection type continuum bound state Download PDFInfo
- Publication number
- CN114088663A CN114088663A CN202111269748.8A CN202111269748A CN114088663A CN 114088663 A CN114088663 A CN 114088663A CN 202111269748 A CN202111269748 A CN 202111269748A CN 114088663 A CN114088663 A CN 114088663A
- Authority
- CN
- China
- Prior art keywords
- microstructure
- substrate
- cross
- sensor based
- terahertz sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000005350 fused silica glass Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims 2
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001575 pathological effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
Abstract
The invention discloses a terahertz sensor based on a symmetrical protection type continuum bound state, which is formed by periodically arranging a plurality of unit structures, wherein the unit structures have the same structure and respectively comprise a substrate formed by fused quartz, and a microstructure column A and a microstructure column B formed by N-type doped silicon are arranged on the upper surface of the substrate. The invention can improve the detection sensitivity and simultaneously overcome the problems that the metal terahertz sensor is easy to oxidize, has high ohmic loss and has a complex structure.
Description
Technical Field
The invention belongs to the technical field of terahertz spectrum application, and particularly relates to a terahertz sensor based on a symmetrical protection type continuum bound state.
Background
Terahertz (THz) waves refer to electromagnetic waves with the frequency range of 0.1THz-10 THz (the wavelength is 3mm-30 mu m), the frequency spectrum of the THz waves lies between the infrared electromagnetic waves and the microwave frequency spectrum in the electromagnetic spectrum, and the THz waves have the advantages of the infrared electromagnetic waves and the microwaves. The photon energy of terahertz radiation is lower than the energy between most chemical bonds, and the terahertz radiation has good penetrating characteristics for most dielectrics. In addition, the frequency band of the terahertz wave is wide, phonons and other elements of a plurality of condensed state systems are excited, vibration and rotation energy levels of a plurality of biomacromolecules are in the wave band, and the wave band contains abundant spectral information, so that the spectral characteristics of other substances in the wave band can be researched, and the substances can be detected and distinguished through characteristic resonance. Therefore, the terahertz wave has great application potential in nondestructive detection, object imaging, especially medical imaging and pathological tissue detection.
The electromagnetic super surface, referred to as "super surface" for short, is a concept derived from a metamaterial, which can be regarded as a two-dimensional plane form of a three-dimensional electromagnetic metamaterial, and a two-dimensional electromagnetic super surface is formed by arranging basic unit structures of the metamaterial on a plane according to a certain sequence or rule. The super-surface can efficiently and freely control the propagation direction of electromagnetic waves, the polarization deflection state of the electromagnetic waves and the like, and can reduce RCS through unique absorption characteristics and scattering characteristics, thereby promoting the development of the electromagnetic stealth technology. For the three-dimensional metamaterial, the electromagnetic metamaterial has smaller mass and volume, and has great significance for further reducing the size of an optical device. Secondly, the processing difficulty and the processing cost of the electromagnetic super surface are both greatly reduced. These advantages enable the rapid development of the super-surface and the application thereof to many fields, and the super-surface has become an important branch of the research of the super-material.
The continuum Bound state (BIC) is a wave that remains localized and coexists with a continuous radiant wave that can carry away energy. While BIC was originally proposed in quantum mechanics, it is a general wave phenomenon and has been observed in electromagnetic waves, acoustic waves in air, water waves, and elastic waves in solids. Infinite height at ideal BICAll possible ideal BIC becomes leakage mode modes with high Q factor, also called quasi-BIC (quasi-BIC) modes, for virtually one practical device (finite size structure). Can have C in the super surface2The symmetrical structural unit introduces symmetrical breaks to convert the BIC mode into a quasi-BIC mode with limited high quality factor, and the BIC mode realized by the method of introducing the symmetrical breaks is called as symmetrical protection type BIC. The quality factor of the symmetric protection type BIC depends on the asymmetric quantity, the height of the quality factor of a resonance peak under a corresponding BIC mode can be changed by changing the size of the asymmetric quantity, the radiation quality factor proposed in 2018 in the period of volume 19 of Physical Review Letters 121 is in direct proportion to the inverse square of the asymmetric weighing, and a new thought is provided for designing a super-surface supporting high quality factor.
Disclosure of Invention
The invention aims to provide a terahertz sensor based on a symmetrical protection type continuum bound state, which can improve the detection sensitivity and simultaneously overcome the problems that a metal terahertz sensor is easy to oxidize, has high ohmic loss and has a complex structure.
The technical scheme adopted by the invention is that the terahertz sensor based on the symmetrical protection type continuum bound state is formed by periodically arranging a plurality of unit structures, the unit structures have the same structure and respectively comprise a substrate formed by fused quartz, and a microstructure column A and a microstructure column B formed by N-type doped silicon are arranged on the upper surface of the substrate.
The present invention is also characterized in that,
the geometric center of the microstructure column A is positioned at the long side of 0.25 times and the short side of 0.5 times of the cross section of the substrate; the geometric center of the microstructure column B is positioned at the long side of 0.75 times and the short side of 0.5 times of the cross section of the substrate.
The cross section of the substrate is rectangular, the length of the long side of the substrate is 130-152 mu m, and the length of the short side of the substrate is 61-81 mu m; the thickness of the substrate is 30 to 50 μm.
The microstructure column A and the microstructure column B are both made of N-type doped silicon, and the carrier concentration of the N-type doped silicon is (0.1-2) multiplied by 1015cm-3。
The microstructure column A has a square cross section, the side length of the square is 21-24 μm, and the height is 30-50 μm.
The height of the microstructure pillar B is 30-50 μm, the maximum width of the cross section shape of the microstructure pillar B is 10-36 μm, and the cross section shape is one of a square, a cross, an L and a rectangle.
The top surface of the microstructure pillar B is a plane.
Compared with a metamaterial sensor made of metal, the terahertz sensor based on the symmetrical protection type continuum bound state has the advantages of simple structure, easiness in processing, strong stability and difficulty in oxidation or corrosion; the BIC or quasi-BIC mode can be realized when TE wave or TM wave is incident; according to the invention, by introducing the asymmetric quantity between the microstructure column and the microstructure column, the terahertz sensor based on the symmetrical protection type continuum constraint state and formed by periodically arranging the unit structures can realize a quasi-BIC mode, can obtain a resonance peak with a quality factor of more than 700 in a transmission spectrum, and can adjust the height of the quality factor of the resonance peak by controlling the magnitude of the asymmetric quantity, and meanwhile, by utilizing the characteristic of the terahertz sensor sensitive to the external electromagnetic environment, the refractive index sensing can be realized; the terahertz sensor based on the symmetrical protection type continuum bound state greatly improves the sensing sensitivity of the sensor and effectively solves the problem that the existing terahertz sensor is low in sensitivity.
Drawings
FIG. 1 is a three-dimensional line drawing of a unit structure of a terahertz sensor based on a symmetrical protection type continuum bound state, provided by the invention;
FIG. 2 is a schematic illustration of the asymmetric quantity introduction method of the present invention;
FIG. 3 is the transmission of a TM wave at normal incidence under the conditions of example 1;
FIG. 4 shows the transmission of a TE wave at normal incidence under the conditions of example 1 according to the present invention;
FIG. 5 is a graph showing the sensing performance of the present invention at normal incidence of TM waves;
FIG. 6 shows the sensing performance of the present invention when the TE wave is incident perpendicularly.
In the figure, 1 is a substrate, 2 is a microstructure column A, and 3 is a microstructure column B.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention discloses a terahertz sensor based on a symmetrical protection type continuum bound state, which is structurally shown in fig. 1 and formed by periodically arranging a plurality of unit structures, wherein the plurality of unit structures have the same structure and respectively comprise a substrate 1 formed by fused quartz, and a microstructure column A2 and a microstructure column B3 formed by N-type doped silicon are arranged on the upper surface of the substrate 1.
The geometric center of the microstructure column A2 is positioned at the long side of 0.25 times and the short side of 0.5 times of the cross section of the substrate 1; the geometric center of microstructure pillar B3 is located at 0.75 times the long side and 0.5 times the short side of the cross-section of substrate 1.
The cross section of the substrate 1 is rectangular, the length of the long side of the substrate 1 is 130-152 mu m, and the length of the short side of the substrate 1 is 61-81 mu m; the substrate 1 has a thickness of 30 to 50 μm.
The microstructure column A2 and the microstructure column B3 are both made of N-type doped silicon, and the carrier concentration of the N-type doped silicon is (0.1-2) × 1015cm-3。
The microstructure pillar A2 has a square cross section, and the side length of the square is 21-24 μm and the height is 30-50 μm.
The height of the microstructure pillar B3 is 30 to 50 μm, the maximum width of the cross-sectional shape of the microstructure pillar B3 is 10 to 36 μm, and as shown in FIG. 2, the cross-sectional shape is one of a square, a cross, an L, and a rectangle.
The top surfaces of the microstructure pillars B3 are flat.
Example 1
The substrate 1 in this example is composed of fused quartz having a dielectric constant of 3.75 and a loss tangent of 0.0004, the substrate 1 has a rectangular cross section, a long side of 142 μm, a short side of 71 μm, and a thickness of 40 μm, two microstructure columns a2 and B3 composed of N-type doped silicon are closely attached to the substrate, the geometric center of the microstructure column a2 is located at 0.25 times the long side and 0.5 times the short side, and the microstructure column B3 is located at the short sideThe geometric center of the pillar B3 was located at 0.75 times the long side and 0.5 times the short side, the included angle between the microstructure pillar A2 and the microstructure pillar B3 and the long side of the substrate 1 was 45 °, and the conductivity of the N-doped silicon used was 0.1 × 1015 cm-3The side of the cross-sectional square of the microstructure pillar A2 was 22.6 μm, and the height was 40 μm. When microstructure pillars B3 and a microstructure pillar a2 are in agreement, the super-surface obtained by periodically arranging the unit structures at this time can realize ideal BIC having a resonance peak of infinitely high quality factor at a frequency at which the ideal BIC is realized.
By introducing an asymmetric amount between the microstructure column A2 and the microstructure column B3, the side length of a square of the cross section of the microstructure column B3 is changed in the present example to be within a range of 10-36 μm, so that a quasi-BIC mode can be realized on the super surface obtained by periodically arranging the unit structures, and a resonance peak with a high quality factor is possessed.
Fig. 3 is an infinite array arrangement of unit structures under an ideal condition, and when TM waves are vertically incident, a transmission line obtained by performing periodic array simulation on the present invention, when the side length of the cross-sectional square of the microstructure pillar B3 and the side length of the cross-sectional square of the microstructure pillar a2 are the same as 22.6 μm, an ideal BIC, that is, a resonance peak having an infinite high quality factor, can be realized near 1.65THz, and as the deviation degree of the side length of the cross-sectional square of the microstructure pillar B3 and the side length of the cross-sectional square of the microstructure pillar a2 increases, a resonance peak having a high quality factor can be gradually obtained, and the quality factor decreases as the deviation degree of the side length of the cross-sectional square of the microstructure pillar B3 and the side length of the cross-sectional square of the microstructure pillar a2 increases.
Fig. 4 is an infinite array arrangement of unit structures under an ideal condition, and a transmission line obtained by performing periodic array simulation on the present invention when a TE wave is vertically incident, when the side length of the cross-sectional square of the microstructure pillar B3 and the side length of the cross-sectional square of the microstructure pillar a2 are the same as 22.6 μm, an ideal BIC can be realized near 1.37THz, and similarly, with an increase in the deviation degree between the side length of the cross-sectional square of the microstructure pillar B3 and the side length of the cross-sectional square of the microstructure pillar a2, a resonant peak with a high Q value can be obtained in a quasi-BIC mode, and the Q value decreases with an increase in the deviation degree between the side length of the cross-sectional square of the microstructure pillar B3 and the side length of the cross-sectional square of the microstructure pillar a 2.
On the basis that parameters of the substrate 1 and the microstructure column A2 in example 1 are not changed, the side length of a cross-section square of the microstructure column 3 is 26.9 micrometers, the side length of a microstructure column A2 square is still 22.6 micrometers, units formed by the microstructure column A2, the microstructure column B3 and the substrate 1 are arranged periodically, a terahertz sensor based on a symmetrical protection type continuum bound state can be obtained, and an object to be measured with the thickness of 16 micrometers is placed on the terahertz sensor based on the symmetrical protection type continuum bound state to perform refractive index sensing. The sensing characteristic curve obtained when the TM wave vertically enters the terahertz sensor based on the symmetrical protection type continuum constraint state is shown in fig. 5, and the sensing characteristic curve obtained when the TE wave vertically enters the terahertz sensor based on the symmetrical protection type continuum constraint state is shown in fig. 6.
Example 2
The substrate material selected in this example was fused quartz having a dielectric constant of 3.75 and a loss tangent of 0.0004, a rectangular cross section, a long side of 130 μm, a short side of 65 μm, and a thickness of 40 μm, and two microstructure pillars a2 and B3 of N-type doped silicon above the substrate, the N-type doped silicon having a conductivity of 0.1 × 1015cm-3The geometric center of microstructure column A2 is located at 0.25 times long side and 0.5 times short side, the geometric center of microstructure column B3 is located at 0.75 times long side and 0.5 times short side, the included angle between microstructure column A2 and microstructure column B3 and the long side of substrate 1 is 45 degrees, the height of microstructure column A2 is 40 micrometers, the side length of the cross-section square of microstructure column A2 is 22.6 micrometers, the side length of the cross-section square of microstructure column B3 is 22.6 micrometers, the height of microstructure column B3 is changed to be changed within the range of 30-50 micrometers, and asymmetry is introduced by adjusting the difference of the heights of microstructure column A2 and microstructure column B3, so that the substrate 1, microstructure column A2 and microstructure column B3 are formed by adjustingThe super surface formed by the periodic arrangement of the unit structures consisting of the pillars B3 can realize a quasi-BIC mode. The quasi-BIC mode can be realized near 2.24THz when the TM wave is vertically incident, and the quasi-BIC mode can be realized near 2.10THz when the TE wave is vertically incident.
Claims (7)
1. The terahertz sensor based on the symmetrical protection type continuum bound state is characterized by being formed by periodically arranging a plurality of unit structures, wherein the unit structures are the same in structure and respectively comprise a substrate (1) formed by fused quartz, and a microstructure column A (2) and a microstructure column B (3) formed by N-type doped silicon are arranged on the upper surface of the substrate (1).
2. The terahertz sensor based on the symmetrical protection type continuum bound state, according to claim 1, wherein the geometric center of the microstructure pillar A (2) is located at 0.25 times of the long side and 0.5 times of the short side of the cross section of the substrate (1); the geometric center of the microstructure column B (3) is positioned at the long side of 0.75 times and the short side of 0.5 times of the cross section of the substrate (1).
3. The terahertz sensor based on the bound state of the symmetrical protection type continuum according to claim 2, wherein the cross section of the substrate (1) is rectangular, the length of the long side of the substrate (1) is 130-152 μm, and the length of the short side of the substrate (1) is 61-81 μm; the thickness of the substrate (1) is 30 to 50 μm.
4. The terahertz sensor based on the symmetrical protection type continuum bound state as claimed in claim 2, wherein the microstructure pillar A (2) and the microstructure pillar B (3) are both made of N-type doped silicon, and the carrier concentration of the N-type doped silicon is (0.1-2) x 1015cm-3。
5. The terahertz sensor based on the symmetrical protection type continuum bound state as claimed in claim 2, wherein the cross section of the microstructure pillar A (2) is square, the side length of the square is 21-24 μm, and the height of the square is 30-50 μm.
6. The terahertz sensor based on the constrained state of the symmetrical protective continuum according to claim 2, wherein the height of the microstructure pillar B (3) is 30-50 μm, the maximum width of the cross-sectional shape of the microstructure pillar B (3) is 10-36 μm, and the cross-sectional shape is one of a square, a cross, an L and a rectangle.
7. The terahertz sensor based on the symmetrical protective continuum bound state as claimed in claim 6, wherein the top surface of the microstructure pillar B (3) is a plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269748.8A CN114088663B (en) | 2021-10-29 | 2021-10-29 | Terahertz sensor based on symmetrical protection type continuum constraint state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269748.8A CN114088663B (en) | 2021-10-29 | 2021-10-29 | Terahertz sensor based on symmetrical protection type continuum constraint state |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114088663A true CN114088663A (en) | 2022-02-25 |
| CN114088663B CN114088663B (en) | 2023-10-27 |
Family
ID=80298178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111269748.8A Active CN114088663B (en) | 2021-10-29 | 2021-10-29 | Terahertz sensor based on symmetrical protection type continuum constraint state |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114088663B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114725646A (en) * | 2022-03-09 | 2022-07-08 | 西安理工大学 | Multi-band terahertz metamaterial resonator with ultrahigh quality factor |
| CN115061224A (en) * | 2022-05-15 | 2022-09-16 | 复旦大学 | BICs (Bipolar complementary Metal-organic Compounds) super-structure surface structure sensor based on medium-metal mixed system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090218563A1 (en) * | 2008-02-28 | 2009-09-03 | Bruce Alvin Gurney | Novel fabrication of semiconductor quantum well heterostructure devices |
| DE102008016294A1 (en) * | 2008-03-28 | 2009-10-01 | Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg | Manufacturing method for a surface sensor, system and use of a surface sensor |
| US20130032702A1 (en) * | 2010-04-15 | 2013-02-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Mono- or multifrequency optical filter, and detector comprising such a filter |
| CN109066095A (en) * | 2018-07-23 | 2018-12-21 | 西安理工大学 | A kind of wideband adjustable THz wave absorber and production method |
| CN109557048A (en) * | 2018-11-14 | 2019-04-02 | 安阳师范学院 | A kind of terahertz wave band Meta Materials sensor |
| CN110265791A (en) * | 2019-06-19 | 2019-09-20 | 西安理工大学 | A kind of light based on compound all dielectric is adjustable high q-factor Terahertz absorber |
| CN112285813A (en) * | 2020-10-20 | 2021-01-29 | 中国计量大学 | Terahertz artificial surface plasmon polariton medium super-grating efficient excitation device |
| CN112382858A (en) * | 2020-10-23 | 2021-02-19 | 西安理工大学 | Light-adjustable four-frequency-band terahertz metamaterial absorber based on all-dielectric material |
-
2021
- 2021-10-29 CN CN202111269748.8A patent/CN114088663B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090218563A1 (en) * | 2008-02-28 | 2009-09-03 | Bruce Alvin Gurney | Novel fabrication of semiconductor quantum well heterostructure devices |
| DE102008016294A1 (en) * | 2008-03-28 | 2009-10-01 | Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co.Kg | Manufacturing method for a surface sensor, system and use of a surface sensor |
| US20130032702A1 (en) * | 2010-04-15 | 2013-02-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Mono- or multifrequency optical filter, and detector comprising such a filter |
| CN109066095A (en) * | 2018-07-23 | 2018-12-21 | 西安理工大学 | A kind of wideband adjustable THz wave absorber and production method |
| CN109557048A (en) * | 2018-11-14 | 2019-04-02 | 安阳师范学院 | A kind of terahertz wave band Meta Materials sensor |
| CN110265791A (en) * | 2019-06-19 | 2019-09-20 | 西安理工大学 | A kind of light based on compound all dielectric is adjustable high q-factor Terahertz absorber |
| CN112285813A (en) * | 2020-10-20 | 2021-01-29 | 中国计量大学 | Terahertz artificial surface plasmon polariton medium super-grating efficient excitation device |
| CN112382858A (en) * | 2020-10-23 | 2021-02-19 | 西安理工大学 | Light-adjustable four-frequency-band terahertz metamaterial absorber based on all-dielectric material |
Non-Patent Citations (1)
| Title |
|---|
| 郑伟;范飞;陈猛;白晋军;常胜江;: "基于太赫兹超材料的微流体折射率传感器", 红外与激光工程, no. 04, pages 1 - 6 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114725646A (en) * | 2022-03-09 | 2022-07-08 | 西安理工大学 | Multi-band terahertz metamaterial resonator with ultrahigh quality factor |
| CN115061224A (en) * | 2022-05-15 | 2022-09-16 | 复旦大学 | BICs (Bipolar complementary Metal-organic Compounds) super-structure surface structure sensor based on medium-metal mixed system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114088663B (en) | 2023-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jin et al. | Gradient index phononic crystals and metamaterials | |
| Yi et al. | Broadband polarization-insensitive and wide-angle solar energy absorber based on tungsten ring-disc array | |
| Shih et al. | Nanofluidic terahertz metasensor for sensing in aqueous environment | |
| CN114088663A (en) | Terahertz sensor based on symmetrical protection type continuum bound state | |
| US10983047B2 (en) | Imaging devices including dielectric metamaterial absorbers and related methods | |
| CN108572162B (en) | Terahertz waveband metamaterial sensor based on quasi-electromagnetic induced transparency effect | |
| Liao et al. | Homogenous metamaterial description of localized spoof plasmons in spiral geometries | |
| Hu et al. | Optical characteristics of GaAs nanowire solar cells | |
| Liu et al. | Wideband tunable omnidirectional infrared absorbers based on doped-silicon nanowire arrays | |
| CN111273384B (en) | Ultra-wideband absorber of ultraviolet-visible light-near infrared band | |
| CN110265791B (en) | Light adjustable high-Q value terahertz absorber based on composite all-dielectric | |
| Kurt et al. | Coupled-resonator optical waveguides for biochemical sensing of nanoliter volumes of analyte in the terahertz region | |
| Chevalier et al. | Absorbing metasurface created by diffractionless disordered arrays of nanoantennas | |
| Liu et al. | Tunable terahertz metamaterials based on anapole excitation with graphene for reconfigurable sensors | |
| Chang et al. | Tungsten nanowire metamaterials as selective solar thermal absorbers by excitation of magnetic polaritons | |
| CN113390819B (en) | Terahertz sensor | |
| Cheng et al. | Highly sensitive terahertz fingerprint sensing with high-Q guided resonance in photonic crystal cavity | |
| CN109557050B (en) | Terahertz metamaterial sensor with complementary structure | |
| CN104316169B (en) | A kind of adjustable ultra broadband wave-absorber of the Terahertz frequency range based on vanadium oxide grating | |
| CN215678089U (en) | Terahertz waveband metamaterial sensor | |
| Jing et al. | Broadband silicon-based tunable metamaterial microfluidic sensor | |
| Guo et al. | Gigahertz Acoustic Vibrations of Elastically Anisotropic Indium–Tin-Oxide Nanorod Arrays | |
| Huang et al. | Highly sensitive biosensor based on metamaterial absorber with an all-metal structure | |
| Gao et al. | Silicon nanowire design for ultrahigh extinction by dipole near-field interaction in transparent solar cells | |
| CN109490997A (en) | The perfect absorber of graphene array based on circle perforation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |