CN114078695A - Annealing method - Google Patents

Annealing method Download PDF

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Publication number
CN114078695A
CN114078695A CN202010793318.5A CN202010793318A CN114078695A CN 114078695 A CN114078695 A CN 114078695A CN 202010793318 A CN202010793318 A CN 202010793318A CN 114078695 A CN114078695 A CN 114078695A
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scanning
wafer
area
starting point
along
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CN202010793318.5A
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刀正开
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Zhongxin Nanfang Integrated Circuit Manufacturing Co ltd
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Zhongxin Nanfang Integrated Circuit Manufacturing Co ltd
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Priority to CN202010793318.5A priority Critical patent/CN114078695A/en
Publication of CN114078695A publication Critical patent/CN114078695A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Abstract

The present application provides a method of annealing, the method comprising: providing a wafer, wherein the wafer comprises a first area and a second area; scanning the first area from a first starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature-raising device; scanning the first area from a second starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature rising device; and in the same way, scanning the first area from an nth starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature rising device to complete the scanning of the surface of the wafer, wherein n is an integer greater than or equal to 3, and the first starting point, the second starting point and the nth starting point are not overlapped. The annealing method improves the heating uniformity of the surface of the whole wafer, thereby improving the reliability of the device.

Description

Annealing method
Technical Field
The application relates to the technical field of semiconductors, in particular to an annealing method.
Background
Annealing the substrate is a more practical method for activating the doped species during semiconductor fabrication. The traditional method mainly adopts a specific furnace tube for annealing.
With the continuous progress of the integrated circuit process, especially the development to the technology nodes of 45nm, 28nm, etc., the requirements for the source and drain regions of the device are higher and higher, and the conventional annealing method can not meet the requirements, so the laser annealing process (LSA) for annealing the semiconductor wafer by scanning the semiconductor wafer with laser is generated.
Due to the characteristics of high energy and short action time, the laser annealing can effectively ensure that the doping substance is activated and simultaneously reduce diffusion or even has no diffusion, so that a high-quality structure can be obtained.
However, the current laser annealing process still has the problem that the wafer surface is heated unevenly, thereby affecting the reliability of the device, and therefore, a more effective and reliable technical solution is needed.
Disclosure of Invention
The application provides an annealing method, which can enable the surface of a wafer to be heated uniformly.
The present application provides an annealing method comprising: providing a wafer, wherein the wafer comprises a first area and a second area; scanning the first area from a first starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature-raising device; scanning the first area from a second starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature rising device; and in the same way, scanning the first area from an nth starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature rising device to complete the scanning of the surface of the wafer, wherein n is an integer greater than or equal to 3, and the first starting point, the second starting point and the nth starting point are not overlapped.
In some embodiments of the present application, n ranges from 20 to 30.
In some embodiments of the present application, the first direction and the second direction are parallel.
In some embodiments of the present application, the first direction and the second direction are opposite.
In some embodiments of the present application, the first, second to nth starting points are uniformly distributed on a straight line perpendicular to the first direction and located on one side of the first region of the wafer.
In some embodiments of the present application, the first starting point, the second starting point, and the nth starting point are sequentially arranged on the straight line.
In some embodiments of the present application, the first, second, and nth starting points are spaced apart by 5 to 6 millimeters.
In some embodiments of the present application, the scanning warming device comprises a laser beam.
In some embodiments of the present application, the power of the scanning warming device when scanning in the first direction is greater than the power when scanning in the second direction.
In some embodiments of the present application, a scanning distance of the scanning temperature raising device in the first direction and the second direction is greater than a diameter of the wafer.
According to the annealing method, the wafer is divided into the first area and the second area, the scanning direction in each area is consistent, the surface of the wafer in each area is heated uniformly, the first area and the second area are heated uniformly by adjusting the power when the two areas are scanned, the heating uniformity of the surface of the whole wafer is improved, and therefore the reliability of a device is improved.
Drawings
The following drawings describe in detail exemplary embodiments disclosed in the present application. Wherein like reference numerals represent similar structures throughout the several views of the drawings. Those of ordinary skill in the art will understand that the present embodiments are non-limiting, exemplary embodiments and that the accompanying drawings are for illustrative and descriptive purposes only and are not intended to limit the scope of the present application, as other embodiments may equally fulfill the inventive intent of the present application. It should be understood that the drawings are not to scale. Wherein:
FIGS. 1-2 are schematic diagrams of an annealing process;
FIG. 3 is a schematic temperature diagram of a wafer surface during an annealing process;
FIGS. 4-8 are schematic diagrams of an annealing process according to an embodiment of the present application;
FIG. 9 is a schematic temperature diagram of a wafer surface during an annealing process according to some embodiments of the present application;
FIG. 10 is a schematic temperature diagram of a wafer surface during an annealing process according to further embodiments of the present application.
Detailed Description
The following description is presented to enable any person skilled in the art to make and use the present disclosure, and is provided in the context of a particular application and its requirements. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Thus, the present application is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.
The technical solution of the present invention will be described in detail below with reference to the embodiments and the accompanying drawings.
In the laser annealing process, a laser beam is projected onto a wafer through a laser homogenizing shaper to form a linear laser beam spot, and the entire semiconductor wafer is uniformly scanned by the linear laser beam spot to achieve the annealing purpose.
Fig. 1 to 2 are schematic views of an annealing method.
In some laser scanning annealing methods, a method of scanning a semiconductor wafer with a linear laser beam spot includes: referring to fig. 1, a wafer 100 is provided, and a laser beam spot generated by a laser scans along a track 10 in fig. 1, specifically, the wafer is scanned from the upper end thereof first from right to left, then the laser beam spot is adjusted to move downward for a certain distance, then the wafer is scanned from left to right, and the above steps are repeated for a plurality of times until the laser beam spot scans the lowest end of the wafer; then, referring to fig. 2, adjusting the laser beam spot to return to the upper end of the wafer to start scanning along a track 11 in fig. 2, specifically, starting from the upper end of the wafer to scan from left to right, where the starting point of the laser beam spot is a point lower than the starting point of the first scanning, then adjusting the laser beam spot to move downward by a certain distance, and scanning the wafer from right to left, and repeating the above steps for multiple times until the laser beam spot scans to the lowest end of the wafer; and repeating the steps for a plurality of times, wherein the starting point of each scanning is lower than the starting point of the last scanning until the laser annealing process is completed.
FIG. 3 is a schematic temperature diagram of a wafer surface during an annealing process.
Referring to fig. 3, in which different filling patterns indicate different temperatures, after the wafer 100 is scanned by the annealing method shown in fig. 1 to 2, since the heating effect of the left scanning and the right scanning on the surface of the wafer 100 is different, the temperatures of the area 110 scanned from left to right and the area 120 scanned from right to left on the surface of the wafer 100 are different, and the temperature uniformity on the surface of the wafer 100 is poor, which affects the reliability of the device.
In order to solve the problems, the annealing method provided by the application divides a wafer into a first area and a second area, the scanning direction in each area is consistent, so that the surface of the wafer in each area is uniformly heated, and the power when the two areas are scanned is adjusted so that the first area and the second area are uniformly heated, so that the heating uniformity of the surface of the whole wafer is improved, and the reliability of a device is improved.
Fig. 4 to 8 are schematic diagrams of an annealing method according to an embodiment of the present application.
Referring to fig. 4, a wafer 200 is provided, the wafer 200 including a first region 210 and a second region 220.
In some embodiments of the present application, the first area 210 is an upper half of the wafer and the second area 220 is a lower half of the wafer. In order to better improve the uniformity of the heating on the wafer surface, the first region 210 and the second region 220 are both a whole block region, rather than being formed by adding up a plurality of small non-adjacent regions.
Referring to fig. 5, the wafer 200 is scanned along the trajectory 20 in fig. 5 using a scanning temperature raising device, specifically, the first area 210 is scanned from a first start point a along a first direction (i.e., a left direction in fig. 5) and then the scanning temperature raising device is moved down to a second area 220 and the scanning of the second area 220 along a second direction (i.e., a right direction in fig. 5) is started.
The scanning direction in each area is consistent when the wafer is scanned in the first direction in the first area 210 and the second direction in the second area 220, so that the surface of the wafer in each area can be uniformly heated.
In some embodiments of the present application, the scanning warming device comprises a laser beam. The spot on the wafer when the laser beam scans the wafer may be circular or square, etc. The laser beam is irradiated on the surface of the wafer, so that the temperature of the irradiated part of the surface of the wafer is increased. The temperature at which the laser beam is irradiated onto the surface of the wafer can be adjusted by adjusting the power of the laser beam.
In some embodiments of the present application, the first direction and the second direction are parallel. If the first direction and the second direction are not parallel, the scanning tracks of the scanning heating device on the wafer may intersect, and part of the surface of the wafer is repeatedly scanned to influence the temperature of the surface, thereby reducing the uniformity of the temperature of the surface of the wafer.
In some embodiments of the present application, the first direction and the second direction are opposite. Because the first direction is opposite to the second direction, the scanning heating device can scan along the second direction after scanning along the first direction, and the scanning efficiency can be improved.
In some embodiments of the present application, a scanning distance of the scanning temperature raising device in the first direction and the second direction is greater than a diameter of the wafer. In order to avoid scanning the wafer when the scanning temperature rising device is moved after scanning along the first direction so as to continue scanning along the second direction, the distance scanned along the first direction by the scanning temperature rising device is larger than the diameter of the wafer.
Referring to fig. 6, the wafer 200 is scanned along the trace 21 in fig. 6 by using the scanning temperature-increasing device, specifically, the scanning position of the scanning temperature-increasing device is moved to the second starting point b, then the first area 210 is scanned from the second starting point b along the first direction (i.e. the left direction in fig. 6), then the scanning temperature-increasing device is moved downward to the second area 220, and the scanning of the second area 220 along the second direction (i.e. the right direction in fig. 6) is started.
The track 21 and the track 20 scan in the first direction in the first area 210, the track 21 and the track 20 scan in the second direction in the second area 220, and the scanning directions in each area are consistent, so that the surface of the wafer in each area can be uniformly heated.
Referring to fig. 7, the wafer 200 is scanned along the trace 22 in fig. 7 by using the scanning temperature-increasing device, specifically, the scanning position of the scanning temperature-increasing device is moved to a third starting point c, then the first region 210 is scanned from the third starting point c along a first direction (i.e., a left direction in fig. 7), then the scanning temperature-increasing device is moved downward to the second region 220, and the scanning of the second region 220 along a second direction (i.e., a right direction in fig. 7) is started.
The track 22, the track 21 and the track 20 scan in a first direction in the first area 210, the track 22, the track 21 and the track 20 scan in a second direction in the second area 220, and the scanning directions in each area are consistent, so that the surface of the wafer in each area can be uniformly heated.
By analogy, the scanning operation is repeated, and the starting point of each time is moved downwards by a certain distance compared with the starting point of the last time. The repeated scanning operation is omitted here.
Referring to fig. 8, until the last scanning operation, the wafer 200 is scanned along the track 23 in fig. 8 by using the scanning temperature increasing device, specifically, the scanning position of the scanning temperature increasing device is moved to an nth starting point n, then the first region 210 is scanned from the nth starting point n along a first direction (i.e., a left direction in fig. 8), then the scanning temperature increasing device is moved downward to a second region 220 and starts to scan the second region 220 along a second direction (i.e., a right direction in fig. 8), and the scanning of the surface of the wafer 200 is completed, wherein n is an integer greater than or equal to 3, and the first starting point a, the second starting point b and the nth starting point n do not overlap.
The track 22, the track 21, the tracks 20 to 23 scan in a first direction in a first area 210, the track 22, the track 21, the tracks 20 to 23 scan in a second direction in a second area 220, and the scanning directions in each area are consistent, so that the wafer surface in each area can be uniformly heated.
In some embodiments of the present application, n ranges from 20 to 30, such as 22, 24, 26, or 28, etc. Specifically, in order to completely scan the entire wafer surface, the value of n may be determined by combining the diameter of the wafer and the size of the scanning pattern of the scanning temperature raising device on the wafer (for example, when the scanning temperature raising device is a laser beam, the size of a light spot formed on the wafer surface by the laser beam).
In some embodiments of the present application, the first, second, and nth starting points a, b, and n are uniformly distributed on a straight line perpendicular to the first direction and located on one side of the first region 210 of the wafer. In order to simplify the operation and improve the scanning efficiency, the first, second, and nth starting points a, b, and n are not randomly distributed on one side of the first region 210 of the wafer.
In some embodiments of the present application, the first starting point a, the second starting point b to the nth starting point n are sequentially arranged on the straight line. The first starting point a, the second starting point b to the nth starting point n are arranged on the straight line in sequence instead of being randomly and irregularly positioned on the straight line, so that the operation can be simplified, and the scanning efficiency can be improved.
In some embodiments of the present application, the distance between the first starting point a, the second starting point b and the nth starting point b is 5 mm to 6 mm. In order to completely scan the whole surface of the wafer, the interval should be smaller than the size of the scanning pattern of the scanning temperature raising device on the wafer (for example, when the scanning temperature raising device is a laser beam, the size of a light spot formed by the laser beam on the wafer surface).
Fig. 9 is a schematic temperature diagram of a wafer surface during an annealing process according to some embodiments of the present application.
Referring to fig. 9, since the scanning direction in the first region 210 is the same, the wafer surface temperature in the first region 210 is uniform; the scanning direction in the second region 220 is uniform, and the wafer surface temperature in the second region 220 is uniform. The temperature uniformity across the wafer surface as shown in fig. 9 is improved as a whole compared to the temperature profile shown in fig. 3. Of course, since the heating effect of the scanning to the first direction and the scanning to the second direction are different on the surface of the wafer 200, the temperatures of the first area 210 and the second area 220 of the wafer are different, and the temperature uniformity of the surface of the wafer 200 still needs to be improved.
In order to further improve the temperature uniformity of the wafer surface, in other embodiments of the present application, when the temperature of the first region 210 is lower than the temperature of the second region 220, the power of the scanning temperature raising device during scanning along the first direction is greater than the power of the scanning along the second direction, so as to further reduce the temperature difference between the first region 210 and the second region 220, and even equalize the temperatures of the first region 210 and the second region 220, thereby improving the temperature uniformity of the wafer surface; when the temperature of the first region 210 is higher than the temperature of the second region 220, the power of the scanning heating device during scanning along the first direction is lower than the power of the scanning heating device during scanning along the second direction, so that the temperature difference between the first region 210 and the second region 220 can be further reduced, even the temperatures of the first region 210 and the second region 220 are equal, and the temperature uniformity of the surface of the wafer is improved.
FIG. 10 is a schematic temperature diagram of a wafer surface during an annealing process according to further embodiments of the present application.
Referring to fig. 10, since the power of the scanning temperature raising device during scanning along the first direction and the power of the scanning temperature raising device during scanning along the second direction are adjusted to make the temperatures of the first area 210 and the second area 220 close to or even equal, the temperature of the surface of the wafer is relatively uniform.
According to the annealing method, the wafer is divided into the first area and the second area, the scanning direction in each area is consistent, the surface of the wafer in each area is heated uniformly, the first area and the second area are heated uniformly by adjusting the power when the two areas are scanned, the heating uniformity of the surface of the whole wafer is improved, and therefore the reliability of a device is improved.
In view of the above, it will be apparent to those skilled in the art upon reading the present application that the foregoing application content may be presented by way of example only, and may not be limiting. Those skilled in the art will appreciate that the present application is intended to cover various reasonable variations, adaptations, and modifications of the embodiments described herein, although not explicitly described herein. Such alterations, modifications, and variations are intended to be within the spirit and scope of the exemplary embodiments of this application.
It is to be understood that the term "and/or" as used herein in this embodiment includes any and all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present.
Similarly, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, the term "directly" means that there are no intervening elements.
It will be further understood that the terms "comprises," "comprising," "includes" or "including," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be further understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element in some embodiments may be termed a second element in other embodiments without departing from the teachings of the present application. The same reference numerals or the same reference characters denote the same elements throughout the specification.
Further, the present specification describes example embodiments with reference to idealized example cross-sectional and/or plan and/or perspective views. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region shown as a rectangle will typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of exemplary embodiments.

Claims (10)

1. An annealing method, comprising:
providing a wafer, wherein the wafer comprises a first area and a second area;
scanning the first area from a first starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature-raising device;
scanning the first area from a second starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature rising device;
and in the same way, scanning the first area from an nth starting point along a first direction and then scanning the second area along a second direction by using a scanning temperature rising device to complete the scanning of the surface of the wafer, wherein n is an integer greater than or equal to 3, and the first starting point, the second starting point and the nth starting point are not overlapped.
2. The annealing method of claim 1, wherein n ranges from 20 to 30.
3. The annealing method of claim 1, wherein said first direction and said second direction are parallel.
4. The annealing method of claim 1, wherein said first direction and said second direction are opposite.
5. The annealing method according to claim 1, wherein the first, second to nth starting points are uniformly distributed on a straight line perpendicular to the first direction on one side of the first region of the wafer.
6. The annealing method according to claim 5, wherein the first starting point, the second starting point to the nth starting point are sequentially arranged on the straight line.
7. The annealing method of claim 5, wherein the distance between the first, second to nth initiation points is 5 mm to 6 mm.
8. The annealing method of claim 1, wherein said scanning temperature-raising means comprises a laser beam.
9. The annealing method of claim 1, wherein said scanning temperature raising means has a power greater when scanning in the first direction than when scanning in the second direction.
10. The annealing method of claim 1, wherein the distance of the scan of said temperature raising means in the first direction and the second direction is greater than the diameter of said wafer.
CN202010793318.5A 2020-08-10 2020-08-10 Annealing method Pending CN114078695A (en)

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Application Number Priority Date Filing Date Title
CN202010793318.5A CN114078695A (en) 2020-08-10 2020-08-10 Annealing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010793318.5A CN114078695A (en) 2020-08-10 2020-08-10 Annealing method

Publications (1)

Publication Number Publication Date
CN114078695A true CN114078695A (en) 2022-02-22

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