CN114078414A - Ambient light monitoring circuit and display panel with same - Google Patents
Ambient light monitoring circuit and display panel with same Download PDFInfo
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- CN114078414A CN114078414A CN202111385230.0A CN202111385230A CN114078414A CN 114078414 A CN114078414 A CN 114078414A CN 202111385230 A CN202111385230 A CN 202111385230A CN 114078414 A CN114078414 A CN 114078414A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
Abstract
The invention provides an ambient light monitoring circuit and a display panel with the same, wherein the ambient light monitoring circuit detects the threshold voltage of a driving module through the mutual matching of a detection module and a compensation module when measuring ambient light, and compensates the threshold voltage of the driving module in the process of outputting output voltage and output current reflecting the change condition of photo-generated leakage current of a photodiode through a reading module, so that the ambient light monitoring is not influenced by the drift or the nonuniformity of the threshold voltage of the driving module, and the reading accuracy and the uniformity of ambient light intensity of each area of the display panel are improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to an ambient light monitoring circuit and a display panel with the same.
Background
The ambient light monitoring circuit is an important component of the display device, and can adjust the brightness of the display panel according to the real-time brightness of ambient light, so that the human eyes can be ensured to have optimal visual perception, for example, the ambient light monitoring circuit can improve the brightness of the display panel outdoors or in places with bright light, so as to improve the contrast of the display panel and ensure the visual cleaning degree; and in indoor or dark place, ambient light monitoring circuit can reduce display panel's luminance to avoid display panel to cross bright and produce stronger stimulus to the human eye, arouse the discomfort, also reduced display panel's consumption simultaneously.
Traditional ambient light monitoring circuit is independent circuit module generally, joins externally outside display panel, but this kind of structure is unfavorable for realizing the full face screen, and is not accurate enough to display panel's ambient light monitoring, consequently has adopted the mode of integrating ambient light monitoring circuit in display panel inside at present, and this just needs to make ambient light monitoring circuit on display panel. However, the thin film transistors used for manufacturing the display panel, especially the Low Temperature Polysilicon (LTPS) thin film transistors, have an inherent problem of non-uniform threshold voltage, that is, the threshold voltages of the LTPS thin film transistors are not completely uniform, and meanwhile, as the display panel is used for a long time, the thin film transistors thereon may generate threshold voltage drift due to electrical stress, that is, the threshold voltage of each thin film transistor itself may drift along with the aging of the thin film transistor, and both of the above two points may cause the output voltage of the ambient light monitoring circuit to be unstable due to the drift or non-uniformity of the threshold voltage of the driving transistor therein, resulting in insufficient reading accuracy and uniformity of ambient light intensity for each region in the display panel.
Therefore, there is a need for a new ambient light monitoring circuit, which can compensate for the threshold voltage of the driving transistor in the ambient light monitoring circuit when monitoring the ambient light, so as to improve the reading accuracy and uniformity of the ambient light intensity for each area of the display panel.
Disclosure of Invention
In order to solve the above problem, an embodiment of the present invention provides an ambient light monitoring circuit, including:
the anode of the photodiode is connected with the common signal line, and the cathode of the photodiode is connected with the first node;
a first capacitor coupled between the common signal line and the first node;
a second capacitor coupled between the first node and a second node;
the control end of the driving module is connected with the second node, the output end of the driving module is connected with the third node, and the input end of the driving module is connected with the fourth node;
the control end of the reset module is connected with a reset signal end, the input end of the reset module is connected with a first reference signal end, and the output end of the reset module is connected with the first node;
the control end of the compensation module is connected with the reset signal end, the input end of the compensation module is connected with the second node, and the output end of the compensation module is connected with the third node;
the control end of the detection module is connected with the reset signal end, the input end of the detection module is connected with the second reference signal end, and the output end of the detection module is connected with the fourth node;
the control end of the power access module is connected with the first scanning signal line, the input end of the power access module is connected with the constant-voltage high-potential end, and the output end of the power access module is connected with the third node;
and the control end of the reading module is connected with the second scanning signal line and the reset signal end, the input end of the reading module is connected with the fourth node and the constant-voltage low-potential end, and the output end of the reading module is connected with the reading signal line.
In some embodiments, the driving module includes a first thin film transistor, a gate of the first thin film transistor is connected to the second node, a source of the first thin film transistor is connected to the fourth node, and a drain of the first thin film transistor is connected to the third node.
In some embodiments, the reset module includes a third thin film transistor, a gate of the third thin film transistor is connected to the reset signal terminal, a source of the third thin film transistor is connected to the first reference signal terminal, and a drain of the third thin film transistor is connected to the first node.
In some embodiments, the compensation module includes a fourth thin film transistor, a gate of the fourth thin film transistor is connected to the reset signal terminal, a source of the fourth thin film transistor is connected to the second node, and a drain of the fourth thin film transistor is connected to the third node.
In some embodiments, the power access module includes a fifth thin film transistor, a gate of the fifth thin film transistor is connected to the first scan signal line, a source of the fifth thin film transistor is connected to the high potential terminal of the constant voltage, and a drain of the fifth thin film transistor is connected to the third node.
In some embodiments, the detection module includes a sixth thin film transistor, a gate of the sixth thin film transistor is connected to the reset signal terminal, a source of the sixth thin film transistor is connected to the second reference signal terminal, and a drain of the sixth thin film transistor is connected to the fourth node.
In some embodiments, the reading module includes a second thin film transistor and a seventh thin film transistor, wherein: the grid electrode of the second thin film transistor is connected with the second scanning signal line, the source electrode of the second thin film transistor is connected with the fourth node, the grid electrode of the seventh thin film transistor is connected with the reset signal end, the source electrode of the seventh thin film transistor is connected with the constant voltage low potential end, and the drain electrode of the second thin film transistor and the drain electrode of the seventh thin film transistor are both connected with the reading signal line.
In some embodiments, a difference between a potential of the constant voltage high potential terminal and a potential of the second reference signal terminal is not less than a threshold voltage of the first thin film transistor.
In some embodiments, a potential of the first reference signal terminal is greater than a potential of the common signal line.
In addition, the embodiment of the invention also provides a display panel, which comprises the ambient light monitoring circuit.
In the ambient light monitoring circuit and the display panel with the ambient light monitoring circuit provided by the embodiment of the invention, when the ambient light is measured, the threshold voltage of the driving module is detected by the detection module and the compensation module which are matched with each other, and the threshold voltage of the driving module is compensated in the process of outputting the output voltage and the output current which reflect the change condition of the photo-generated leakage current of the photodiode through the reading module, so that the ambient light monitoring is not influenced by the drift or the non-uniformity of the threshold voltage of the driving module, and the reading accuracy and the uniformity of the ambient light intensity of each area of the display panel are improved.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
Fig. 1 is a schematic structural diagram of an ambient light monitoring circuit according to an embodiment of the present invention;
fig. 2 is a timing diagram of an ambient light monitoring circuit according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In all embodiments of the present invention, two poles other than the gate of the transistor are distinguished, one of the two poles is called a source, and the other pole is called a drain. Since the source and drain of a transistor are symmetrical, the source and drain are interchangeable. The form of the figure provides that the middle end of the transistor is a grid, the signal input end is a source, and the signal output end is a drain. In addition, the transistors used in all embodiments of the present application may include both P-type and/or N-type transistors, wherein the P-type transistor is turned on when the gate is at a low potential and turned off when the gate is at a high potential; the N-type transistor is turned on when the grid is at a high potential and turned off when the grid is at a low potential.
Fig. 1 is a schematic structural diagram of an ambient light monitoring circuit according to an embodiment of the present invention, and as shown in fig. 1, an ambient light monitoring circuit according to an embodiment of the present invention includes:
a photodiode D1 having an anode connected to a common signal line COM and a cathode connected to a first node Q1;
a first capacitor C1 coupled between the common signal line COM and the first node Q1;
a second capacitor C2 coupled between the first node Q1 and a second node Q2;
the control end of the driving module 100 is connected with the second node Q2, the output end of the driving module is connected with the third node Q3, and the input end of the driving module is connected with the fourth node Q4;
the control end of the reset module is connected with a reset signal end Rst, the input end of the reset module is connected with a first reference signal end Vref1, and the output end of the reset module is connected with the first node Q1;
a compensation module 300 having a control terminal connected to the reset signal terminal Rst, an input terminal connected to the second node Q2, and an output terminal connected to the third node Q3;
the detection module 500 has a control end connected to the reset signal end Rst, an input end connected to the second reference signal end Vref2, and an output end connected to the fourth node Q4;
the power supply access module 400 has a control end connected with the first scanning signal line Gn1, an input end connected with the constant high potential end VDD, and an output end connected with the third node Q3;
and a control terminal of the read block 600 is connected to the second scan signal line Gn2 and the reset signal terminal Vb, an input terminal thereof is connected to the fourth node Q4 and the constant voltage low potential terminal VSS, and an output terminal thereof is connected to the read signal line RO.
The ambient light monitoring circuit provided in the embodiment of the present invention detects the threshold voltage of the driving module 100 through the mutual cooperation of the detecting module 500 and the compensating module 300 when measuring the ambient light, and compensates the threshold voltage of the driving module 100 in the process of outputting the output voltage and the output current reflecting the change condition of the photo leakage current of the photodiode D1 through the reading module 600, so that the ambient light monitoring is not affected by the drift or non-uniformity of the threshold voltage of the driving module 100, and the reading accuracy and uniformity of the ambient light intensity of each region of the display panel are improved.
Referring to fig. 1, the driving module 100 includes a first thin film transistor T1, a gate of the first thin film transistor T1 is connected to the second node Q2, a source of the first thin film transistor T1 is connected to the fourth node Q4, and a drain of the first thin film transistor T1 is connected to the third node Q3.
Referring to fig. 1, the reset module includes a third tft T3, a gate of the third tft T3 is connected to the reset signal terminal Rst, a source of the third tft T3 is connected to the first reference signal terminal Vref1, and a drain of the third tft T3 is connected to the first node Q1.
Still referring to fig. 1, in some embodiments, the compensation module 300 includes a fourth tft T4, a gate of the fourth tft T4 is connected to the reset signal terminal Rst, a source of the fourth tft T4 is connected to the second node Q2, and a drain of the fourth tft T4 is connected to the third node Q3.
Still referring to fig. 1, in some embodiments, the power accessing module 400 includes a fifth thin film transistor T5, a gate of the fifth thin film transistor T5 is connected to the first scan signal line Gn1, a source of the fifth thin film transistor T5 is connected to the constant voltage high potential terminal VDD, and a drain of the fifth thin film transistor T5 is connected to the third node Q3.
Still referring to fig. 1, in some embodiments, the detecting module 500 includes a sixth thin film transistor T6, a gate of the sixth thin film transistor T6 is connected to the reset signal terminal Rst, a source of the sixth thin film transistor T6 is connected to the second reference signal terminal Vref2, and a drain of the sixth thin film transistor T6 is connected to the fourth node Q4.
Continuing to refer to fig. 1, in some embodiments, the reading module 600 includes a second thin film transistor T2 and a seventh thin film transistor T7, wherein: a gate of the second thin film transistor T2 is connected to the second scan signal line Gn2, a source of the second thin film transistor T2 is connected to the fourth node Q4, a gate of the seventh thin film transistor T7 is connected to the reset signal terminal Vb, a source of the seventh thin film transistor T7 is connected to the constant voltage low potential terminal VSS, and a drain of the second thin film transistor T2 and a drain of the seventh thin film transistor T7 are both connected to the read signal line RO.
In the ambient light monitor circuit, a difference between the potential of the constant voltage high potential terminal VDD and the potential of the second reference signal terminal Vref2 is not less than the threshold voltage Vth of the first thin film transistor T1. The potential of the first reference signal terminal Vref1 is higher than the potential of the common signal line COM.
Fig. 2 is a timing diagram of the ambient light monitoring circuit according to the embodiment of the present invention, and based on the above embodiments, with reference to fig. 1 and fig. 2, the working process of the ambient light monitoring circuit includes an initial reset phase t1, a detection compensation phase t2, and an exposure reading phase t3, and the working process of each phase is described in detail as follows:
in the initial reset period T1, the second scan signal line Gn2 is low, the reset signal terminal Rst and the first scan signal line Gn1 are high, and the third thin film transistor T3, the fourth thin film transistor T4, the fifth thin film transistor T5 and the sixth thin film transistor T6 are turned on, so that the potential of the first node Q1 is set to the potential Vref1 of the first reference signal terminal, and the potential of the second node Q2 is set to the potential VDD of the constant voltage high potential terminal, and the first capacitor C1 and the second capacitor C2 are charged.
In the detection compensation stage t 2: the first scanning signal line Gn1 and the second scanning signal line Gn2 are both low level, the reset signal terminal Rst is high level, the third thin film transistor T3, the fourth thin film transistor T4, and the sixth thin film transistor T6 are kept on, the first capacitor C1 keeps the potential of the first node Q1 at the potential Vref1 of the first reference signal terminal, the second capacitor C2 keeps the potential of the second node Q2 at the potential VDD of the constant voltage high potential terminal, at which time the potential of the fourth node Q4 is the potential Vref2 of the second reference signal terminal, the gate-source potential difference of the first thin film transistor T1 is VDD-Vref2 > Vth (Vth is the threshold voltage of the first thin film transistor T1), the first thin film transistor T1 is turned on, thereby gradually forming a current path from the second node Q5 through the fourth thin film transistor T4, the first thin film transistor T1, the sixth thin film transistor T1, the second thin film transistor T6 to the second reference signal terminal Vref 599, the second reference signal terminal Vref 5928, that is, when the gate-source potential difference Vgs of the first thin film transistor T1 decreases to Vth, the first thin film transistor T1 is turned off. Since Vref2 is a known amount, the threshold voltage Vth of the first tft T1 can be detected through the second node Q2.
In the exposure reading phase t 3: the reset signal terminal Rst is at a low level, and when the potential of the second node Q2 is Vref2+ Vth and the first thin film transistor T1 is turned off, the second scan signal line Gn2 is at a high level, and the first scanning signal line Gn1 is kept at a high level, the second thin film transistor T2 is turned on, and the potential Vb of the reset signal terminal is configured to be a high level, so that the seventh thin film transistor T7 is turned on, since the constant voltage low potential VSS < the potential Vref2 of the second reference signal line, the gate-to-source potential difference Vgs of the first thin film transistor T1 becomes large, so that the first thin film transistor T1 is turned on, thus, the constant voltage high potential terminal VDD forms a current path to the constant voltage low potential VSS through the fifth thin film transistor T5, the first thin film transistor T1, the second thin film transistor T2 and the seventh thin film transistor T7, therefore, the output current and the output voltage reflected by the first thin film transistor T1 due to the photo leakage current generated by the photodiode D1 by sensing the intensity of the ambient light can be read through the read signal line RO.
Since the photodiode D1 needs to operate in a reverse bias state, i.e., Vref1> Vcom, because the forward resistance of the photodiode is small and the reverse resistance is large, the reverse resistance becomes small when the photodiode is illuminated, and a reverse current, i.e., a leakage current, is generated, thereby sensing the intensity of the ambient light. When the light is more strongly irradiated, the larger the leakage current, the faster the potential of the first node Q1 falls.
Specifically, the principle that the ambient light monitoring circuit reflects the photo-generated leakage current generated by the photodiode D1 is as follows: at the stage t3, the photodiode D1 generates a photo leakage current, the potential of the first node Q1 gradually decreases under the sustain of the first capacitor C1, and the potential of the second node Q2 also gradually decreases under the coupling effect of the second capacitor C2. In different light intensity environments, the leakage current generated by the light emitting diode D1 is different, the decreasing speeds of the potentials of the first node Q1 and the second node Q2 are different, and the decreasing speed of the potential of the second node Q2 makes the opening degree of the first thin film transistor T1 smaller, and finally the decreasing speeds of the output voltage and the output current reflected to the reading signal line RO are different, so that the current intensity of the ambient light can be determined by monitoring the variation conditions of the output voltage and the output current on the reading signal line RO, for example, the stronger the light intensity, the larger the leakage current generated by the photodiode D1 is, the faster the decreasing speeds of the potentials of the first node Q1 and the second node Q2 are, and the faster the output voltage and the output current on the reading signal line RO are decreased.
It should be noted that, since the threshold voltage Vth of the first TFT T1 has been detected through the second node Q2 during the detection compensation phase T2, the threshold voltage Vth flows through the first TFTDrive current equation of T1: k (Vgs-Vth)2In the exposure reading phase T3, when the potential of the second node Q2 is decreased from Vref2+ Vth to VSS + Vth until the first tft T1 is turned off, the current flowing through the first tft T1 is changed from I ═ K (Vgs-Vth) ═ K (Vref2+ Vth-VSS-Vth) ═ K (Vref2-VSS)2And drops to 0, in which the threshold voltage Vth of the first thin film transistor T1 has been cancelled, thus making the current I flowing through the first thin film transistor T1 independent of the threshold voltage of the first thin film transistor T1, thereby compensating for the threshold voltage of the first thin film transistor T1. Generally, the constant voltage low potential is the lowest point of potential in the circuit, i.e., Vref2>VSS, and Vb>VSS。
Based on the foregoing embodiments, an embodiment of the present invention further provides a display panel, where the display panel includes the ambient light monitoring circuit, and the ambient light monitoring circuit may be externally hung on the display panel or integrated in the display panel. The display panel and the ambient light monitoring circuit have the same structure and beneficial effects, and the ambient light monitoring circuit has been described in detail in the above embodiments, and is not described herein again.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The above description of the embodiments is only for helping understanding the technical solution of the present invention and its core idea; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. An ambient light monitoring circuit, comprising:
the anode of the photodiode is connected with the common signal line, and the cathode of the photodiode is connected with the first node;
a first capacitor coupled between the common signal line and the first node;
a second capacitor coupled between the first node and a second node;
the control end of the driving module is connected with the second node, the output end of the driving module is connected with the third node, and the input end of the driving module is connected with the fourth node;
the control end of the reset module is connected with a reset signal end, the input end of the reset module is connected with a first reference signal end, and the output end of the reset module is connected with the first node;
the control end of the compensation module is connected with the reset signal end, the input end of the compensation module is connected with the second node, and the output end of the compensation module is connected with the third node;
the control end of the detection module is connected with the reset signal end, the input end of the detection module is connected with the second reference signal end, and the output end of the detection module is connected with the fourth node;
the control end of the power access module is connected with the first scanning signal line, the input end of the power access module is connected with the constant-voltage high-potential end, and the output end of the power access module is connected with the third node;
and the control end of the reading module is connected with the second scanning signal line and the reset signal end, the input end of the reading module is connected with the fourth node and the constant-voltage low-potential end, and the output end of the reading module is connected with the reading signal line.
2. The ambient light monitoring circuit of claim 1, wherein the driving module comprises a first thin film transistor, a gate of the first thin film transistor is connected to the second node, a source of the first thin film transistor is connected to the fourth node, and a drain of the first thin film transistor is connected to the third node.
3. The ambient light monitoring circuit of claim 1, wherein the reset module comprises a third thin film transistor, a gate of the third thin film transistor is connected to the reset signal terminal, a source of the third thin film transistor is connected to the first reference signal terminal, and a drain of the third thin film transistor is connected to the first node.
4. The ambient light monitoring circuit of claim 1, wherein the compensation module comprises a fourth thin film transistor, a gate of the fourth thin film transistor is connected to the reset signal terminal, a source of the fourth thin film transistor is connected to the second node, and a drain of the fourth thin film transistor is connected to the third node.
5. The ambient light monitoring circuit according to claim 1, wherein the power supply connection block comprises a fifth thin film transistor, a gate of the fifth thin film transistor is connected to the first scanning signal line, a source of the fifth thin film transistor is connected to the high potential terminal of the constant voltage, and a drain of the fifth thin film transistor is connected to the third node.
6. The ambient light monitoring circuit of claim 1, wherein the detection module comprises a sixth thin film transistor, a gate of the sixth thin film transistor is connected to the reset signal terminal, a source of the sixth thin film transistor is connected to the second reference signal terminal, and a drain of the sixth thin film transistor is connected to the fourth node.
7. The ambient light monitoring circuit of claim 1, wherein the read module comprises a second thin film transistor and a seventh thin film transistor, wherein:
the grid electrode of the second thin film transistor is connected with the second scanning signal line, the source electrode of the second thin film transistor is connected with the fourth node, the grid electrode of the seventh thin film transistor is connected with the reset signal end, the source electrode of the seventh thin film transistor is connected with the constant voltage low potential end, and the drain electrode of the second thin film transistor and the drain electrode of the seventh thin film transistor are both connected with the reading signal line.
8. The ambient light monitoring circuit according to claim 2, wherein a difference between a potential of the constant high potential terminal and a potential of the second reference signal terminal is not less than a threshold voltage of the first thin film transistor.
9. The ambient light monitoring circuit of claim 1, wherein a potential of the first reference signal terminal is greater than a potential of the common signal line.
10. A display panel comprising the ambient light monitoring circuit of any one of claims 1-9.
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101208735A (en) * | 2005-06-30 | 2008-06-25 | 皇家飞利浦电子股份有限公司 | Electroluminescent display devices |
| US20080158211A1 (en) * | 2006-12-27 | 2008-07-03 | Samsung Sdi Co., Ltd. | Ambient light sensing circuit and flat panel display including ambient light sensing circuit |
| US20090015166A1 (en) * | 2006-12-27 | 2009-01-15 | Samsung Sdi Co., Ltd. | Ambient light sensing circuit and flat panel display including ambient light sensing circuit |
| US20110141078A1 (en) * | 2009-09-25 | 2011-06-16 | Stmicroelectronics (Research & Development) Limite | Ambient light detection |
| CN103413523A (en) * | 2013-07-31 | 2013-11-27 | 京东方科技集团股份有限公司 | Pixel circuit, organic electroluminescence display panel and display device |
| US20150035798A1 (en) * | 2013-07-31 | 2015-02-05 | Boe Technology Group Co., Ltd. | Organic Light-Emitting Diode Pixel Circuit, Drive Method Thereof, and Display Device |
| CN106489175A (en) * | 2016-07-20 | 2017-03-08 | 京东方科技集团股份有限公司 | Emission control circuit, the display device with emission control circuit and its driving method |
| CN107204172A (en) * | 2017-06-02 | 2017-09-26 | 京东方科技集团股份有限公司 | Image element circuit and its driving method, display panel |
| CN109427301A (en) * | 2018-05-09 | 2019-03-05 | 京东方科技集团股份有限公司 | Pixel circuit and electroluminescence display panel, its driving method and display device |
| CN109870470A (en) * | 2017-06-30 | 2019-06-11 | 京东方科技集团股份有限公司 | Detected pixel circuit, ray detection panel and photoelectric detection system |
| WO2020211053A1 (en) * | 2019-04-18 | 2020-10-22 | Huawei Technologies Co., Ltd. | Pixel circuit and pixel control method |
| WO2020232654A1 (en) * | 2019-05-22 | 2020-11-26 | Boe Technology Group Co., Ltd. | A pixel circuit with photo-sensing function, a driving method, and a display apparatus |
-
2021
- 2021-11-22 CN CN202111385230.0A patent/CN114078414A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101208735A (en) * | 2005-06-30 | 2008-06-25 | 皇家飞利浦电子股份有限公司 | Electroluminescent display devices |
| US20080158211A1 (en) * | 2006-12-27 | 2008-07-03 | Samsung Sdi Co., Ltd. | Ambient light sensing circuit and flat panel display including ambient light sensing circuit |
| US20090015166A1 (en) * | 2006-12-27 | 2009-01-15 | Samsung Sdi Co., Ltd. | Ambient light sensing circuit and flat panel display including ambient light sensing circuit |
| US20110141078A1 (en) * | 2009-09-25 | 2011-06-16 | Stmicroelectronics (Research & Development) Limite | Ambient light detection |
| CN103413523A (en) * | 2013-07-31 | 2013-11-27 | 京东方科技集团股份有限公司 | Pixel circuit, organic electroluminescence display panel and display device |
| US20150035798A1 (en) * | 2013-07-31 | 2015-02-05 | Boe Technology Group Co., Ltd. | Organic Light-Emitting Diode Pixel Circuit, Drive Method Thereof, and Display Device |
| CN106489175A (en) * | 2016-07-20 | 2017-03-08 | 京东方科技集团股份有限公司 | Emission control circuit, the display device with emission control circuit and its driving method |
| CN107204172A (en) * | 2017-06-02 | 2017-09-26 | 京东方科技集团股份有限公司 | Image element circuit and its driving method, display panel |
| CN109870470A (en) * | 2017-06-30 | 2019-06-11 | 京东方科技集团股份有限公司 | Detected pixel circuit, ray detection panel and photoelectric detection system |
| CN109427301A (en) * | 2018-05-09 | 2019-03-05 | 京东方科技集团股份有限公司 | Pixel circuit and electroluminescence display panel, its driving method and display device |
| WO2020211053A1 (en) * | 2019-04-18 | 2020-10-22 | Huawei Technologies Co., Ltd. | Pixel circuit and pixel control method |
| WO2020232654A1 (en) * | 2019-05-22 | 2020-11-26 | Boe Technology Group Co., Ltd. | A pixel circuit with photo-sensing function, a driving method, and a display apparatus |
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