CN114075655B - Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device - Google Patents
Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device Download PDFInfo
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- CN114075655B CN114075655B CN202010853027.0A CN202010853027A CN114075655B CN 114075655 B CN114075655 B CN 114075655B CN 202010853027 A CN202010853027 A CN 202010853027A CN 114075655 B CN114075655 B CN 114075655B
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- 238000000576 coating method Methods 0.000 claims abstract description 198
- 239000011248 coating agent Substances 0.000 claims abstract description 193
- 239000002184 metal Substances 0.000 claims abstract description 160
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- 238000013329 compounding Methods 0.000 claims abstract description 33
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 187
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 19
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/14—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
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- Life Sciences & Earth Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroplating Methods And Accessories (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a conductive film, a preparation method of the conductive film, a current collection and transmission material and an energy storage device, and relates to the technical field of conductive films, wherein the conductive film comprises a film base material, a first metal coating, a second metal coating, a PI film, a PP film, a third metal coating and a fourth metal coating; the first metal coating is formed on one surface of the film substrate through vacuum coating equipment, and the second metal coating is formed on the first metal coating through a water plating device; the PI film is single-sided compounded on the outer surface of the second metal coating through a coating compounding device, and the PP film is compounded on the PI film through the coating compounding device; the third metal coating is formed on the outer surface of the PP film through a magnetron sputtering coating device, and the fourth metal coating is formed on the third metal coating through a water plating device; the beneficial effects of the invention are as follows: the limit on the thickness of the outer film substrate is relaxed, and the strength and compactness of the coating material are improved.
Description
Technical Field
The invention relates to the technical field of conductive films, in particular to a conductive film, a preparation method of the conductive film, a current collection and transmission material and an energy storage device.
Background
At present, the vacuum coating technology is widely applied to the high-tech fields of electronic products, optical elements, sensors and the like, and researchers develop various vacuum coating equipment suitable for different technical requirements according to the characteristics of various production chains.
The vacuum coating technology is mainly divided into two types of evaporation coating and sputtering coating. The evaporating coating method is to make the evaporating material become clusters, molecules or atoms by means of current heating, electron beam heating or laser heating in vacuum environment, and to make free motion in relatively great free range. The evaporation coating method has the advantages of high purity and good crystallization, and is commonly used for producing and manufacturing metal films, semiconductor films and thin film solar cell materials.
When the conductive film coiled material is produced, a process line of combining an evaporation coating with a water plating coating is generally adopted. In order to meet the thickness requirement of the conductive film, there is a specific requirement on the thickness of the base film, which makes it necessary to limit the thickness of the base film when producing the conductive film coiled material, and the thickness of the base film can be only within a certain range and cannot be too thin or too thick. In addition, when evaporation coating is carried out, a material (such as copper) to be evaporated is added into a crucible, the material is heated, the phenomenon of uneven heating is unavoidable, the situation that the local temperature is too high occurs when the material is heated unevenly, the base film is scalded through when meeting the base film, holes are formed, and therefore the qualification rate of products is affected.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides the conductive film, which widens the limit on the thickness of an outer film substrate, avoids the phenomenon of holes and improves the product yield.
The technical scheme adopted for solving the technical problems is as follows: in a conductive film, the improvement comprising: the coating comprises a film substrate, a first metal coating, a second metal coating, a PI film, a transition film, a third metal coating and a fourth metal coating;
the first metal coating is formed on one surface of the film substrate through vacuum coating equipment, and the second metal coating is formed on the first metal coating through a water plating device;
the PI film is coated on the outer surface of the second metal coating through a single-sided coating and compounding device, and the transition film is compounded on the PI film through a coating and compounding device;
the third metal coating is formed on the outer surface of the transition film through magnetron sputtering coating equipment, and the fourth metal coating is formed on the third metal coating through a water plating device;
and stripping the film substrate after the fourth metal coating is formed to form a finished film.
In the above structure, the film substrate includes, but is not limited to, PP film, PE film or PET film.
In the above structure, the transition film is any one of PP film, PE film and PET film.
In the structure, the thickness of the film base material is 12-20 mu m;
in the structure, the thickness of the first metal coating is 50-200nm;
in the structure, the thickness of the second metal coating is 600-900nm;
in the above structure, the thickness of the PI film is 0.5-1 μm;
in the structure, the thickness of the transition film is 2-3.5 mu m;
in the structure, the thickness of the third metal coating is 5-50nm;
in the structure, the thickness of the fourth metal coating is 600-900nm;
in the above structure, the first metal plating layer, the second metal plating layer, the third metal plating layer and the fourth metal plating layer are copper plating layers.
The invention also provides a preparation method of the conductive film, which is improved in that: the method comprises the following steps:
s1, coating a film on one surface of a film substrate by adopting vacuum coating equipment to form a first metal coating with the thickness of 50-200nm;
s2, forming a 600-900nm second metal coating on the outer surface of the first metal coating through a water plating device;
s3, coating PI material on the outer surface of the second metal coating by using coating composite equipment to form a PI film of 0.5-1 mu m;
s4, drying the product obtained in the step S3, wherein the baking temperature is 70-90 ℃ and the baking time is 1-2min;
s5, compounding a PP film, a PE film or a PET film with the thickness of 2-3.5 mu m on the outer surface of the PI film through coating compounding equipment;
s6, coating a film on the other surface of the PP film, the PE film or the PET film by using magnetron sputtering coating equipment to form a third metal coating of 5-50nm;
s7, coating a film on the outer surface of the third metal coating through a water plating device to form a fourth metal coating with the thickness of 600-900nm;
s8, stripping the film base material to form a finished film with the thickness of 5-6 mu m.
Further, in the step S1, the vacuum coating apparatus includes, but is not limited to, a vacuum evaporation coating apparatus or a magnetron sputtering coating apparatus.
Further, in the step S1, the film substrate includes but is not limited to PP film, PE film or PET film.
Further, the thickness of the film base material is 12-20 μm.
Further, the first metal plating layer, the second metal plating layer, the third metal plating layer and the fourth metal plating layer are copper plating layers.
Further, in the step S2 and the step S7, the water plating device is an alkaline water plating device or an acidic water plating device.
In step S5, after the PP film, the PE film or the PET film is coated on the outer surface of the PI film and is completely compounded, the sheet resistance of one side is within 20mΩ.
Further, in the step S8, a stripper is used to strip the film substrate.
Further, before step S1, step S0 is further included: and coating a layer of release agent with the thickness of 0.3-1um on the two sides of the film substrate respectively, so that the film substrate and the functional film can be effectively peeled in the subsequent steps.
The invention also discloses a current collection and transmission material, which is improved in that: including the finished film described above.
The invention also discloses an energy storage device, which comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, and is characterized in that: the cathode plate uses the current collecting and transmitting material.
The beneficial effects of the invention are as follows: the limit on the thickness of the substrate of the external film is relaxed; avoiding the phenomenon that the base material in the prior art is easy to generate bubbles and holes in the evaporation plating process; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
Drawings
Fig. 1 is a schematic structural diagram of a fourth metal coating forming structure of a conductive film according to the present invention.
Fig. 2 is a schematic cross-sectional view of a conductive film formed according to the present invention.
Fig. 3 is a schematic flow chart of a method for preparing a conductive film according to the present invention.
Fig. 4 is a schematic cross-sectional view of a conductive film of the present invention after PI film formation.
Detailed Description
The invention will be further described with reference to the drawings and examples.
The conception, specific structure, and technical effects produced by the present invention will be clearly and completely described below with reference to the embodiments and the drawings to fully understand the objects, features, and effects of the present invention. It is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present invention based on the embodiments of the present invention. In addition, all the coupling/connection relationships referred to in the patent are not direct connection of the single-finger members, but rather, it means that a better coupling structure can be formed by adding or subtracting coupling aids depending on the specific implementation. The technical features in the invention can be interactively combined on the premise of no contradiction and conflict.
Example 1
Referring to fig. 1, the present invention discloses a conductive film, which comprises a film substrate 10, a first metal plating layer 20, a second metal plating layer 30, a PI film 40, a PP film 50, a third metal plating layer 60 and a fourth metal plating layer 70; the first metal coating 20 is formed on one surface of the film substrate 10 by a vacuum coating device, the second metal coating 30 is formed on the first metal coating 20 by a water plating device, so that the first metal coating 20 and the second metal coating 30 are formed on one surface of the film substrate 10, in this embodiment, the film substrate 10 is a PET film with a thickness of 12 μm, the thickness of the first metal coating 20 is 50nm, and the thickness of the second metal coating 30 is 600nm. Further, the PI film 40 is coated on the outer surface of the second metal plating layer 30 through a coating and compounding device, and the PP film 50 is compounded on the PI film 40 through the coating and compounding device, wherein the thickness of the PI film 40 is 0.5 μm, and the thickness of the PP film 50 is 3 μm. The third metal coating 60 is formed on the outer surface of the PP film 50 by a magnetron sputtering coating device, and the fourth metal coating 70 is formed on the third metal coating 60 by a water plating device; the thickness of the third metal plating layer 60 is 5nm and the thickness of the fourth metal plating layer 70 is 800nm. As shown in fig. 1 and 2, the film substrate 10 is peeled off after the fourth metal plating layer 70 is formed, and the thickness of the finished film formed after peeling off the film substrate 10 is 5 μm. In the above embodiment, the first metal plating layer 20, the second metal plating layer 30, the third metal plating layer 60 and the fourth metal plating layer 70 are copper plating layers.
As shown in fig. 3, in this embodiment, there is also provided a method for preparing a conductive film, and the detailed steps of the preparation method are as follows:
s0, coating a layer of release agent with the thickness of 0.3-1um on each side of the film substrate 10 with the thickness of 12 mu m;
s1, coating a film on one surface of a film substrate 10 by adopting vacuum coating equipment to form a first metal coating 20 with the thickness of 50nm, wherein the film substrate 10 is a PET film, the vacuum coating equipment is vacuum evaporation coating equipment, and the first metal coating 20 is a copper plating layer;
s2, forming a 600nm second metal coating 30 on the outer surface of the first metal coating 20 through a water plating device, wherein the water plating device is alkaline water plating equipment, and the second metal coating 30 is a copper plating layer;
s3, using a coating composite device, coating a PI material on the outer surface of the second metal coating 30 on one side to form a 0.5 mu m PI film 40;
s4, drying the semi-finished film formed in the step S3, wherein the baking temperature is 70 ℃, the baking time is 1min, and the loss of adhesive force caused by the fact that the baking is completely dry is avoided; as shown in fig. 4, the layer structure of the semi-finished film formed after the PI film 40 is coated;
s5, compounding the PP film 50 with the thickness of 3 mu m on the outer surface of the PI film 40 by using a coating compounding device, wherein the coating compounding device adopted in the step is the same as the coating compounding device in the step S3, and the structure and principle of the coating compounding device are not described in detail in the embodiment because the coating compounding device is very mature in the prior art;
s6, coating a film on the other surface of the PP film 50 by using magnetron sputtering coating equipment to form a third metal coating 60 with the thickness of 5nm, wherein the third metal coating 60 is a copper plating layer;
s7, coating a film on the outer surface of the third metal coating 60 through a water plating device to form a fourth metal coating 70 with the thickness of 800nm, wherein in the step, the water plating device is the same as the water plating device in the step S2 and is alkaline water plating equipment, and the same alkaline water plating equipment or two same alkaline water plating equipment can be adopted; likewise, the fourth metal layer is a copper plating layer; fig. 1 is a schematic structural diagram of the fourth metal plating layer 70 after being formed;
s8, stripping the film substrate 10 by using a stripping machine to form a 5-mu m finished film, wherein the single-sided sheet resistance is within 20mΩ; as shown in fig. 2, a schematic cross-sectional view of the finished film.
In this embodiment, the thickness of the film substrate 10 is 12 μm, and based on the preparation method of the present invention, the thickness of the film substrate 10 can be arbitrarily selected from 8-20 μm, thereby relaxing the limitation on the thickness of the outer film substrate 10. In the prior art, a process line adopting evaporation coating has the problem of bubble formation and the problem of holes, wherein the bubble formation problem is that when the evaporation coating process is carried out, the deformation of a base film is deteriorated due to the higher temperature of the evaporation coating process, and a series of deformations in the film running direction are generated; the cross foam can affect the product quality on one hand, and the consistency of the product on the other hand, so that about 30% quality loss is formed for the product. The problem of holes is that when the evaporation coating process is carried out, the base film is broken down easily by high-temperature metal particles due to high process temperature and tiny fluctuation, so that holes are formed, and the holes can cause the phenomenon of material leakage in the surface treatment process in the process of processing and using a rear industrial chain, so that a certain probability can cause great safety risk to terminal products. The preparation method of the conductive film avoids the phenomenon that the base material in the prior art is easy to generate bubbles and holes in the evaporation plating process; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
In addition, the invention also discloses a current collection and transmission material, which comprises the conductive film formed in the embodiment; the energy storage device comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the cathode pole piece is made of the current collecting and transmitting material.
Example 2
As shown in fig. 3, the present invention discloses a method for preparing a conductive film, which comprises the following steps:
s1, coating a film on one surface of a film substrate 10 with the thickness of 20 mu m by adopting vacuum coating equipment to form a first metal coating 20 with the thickness of 200nm, wherein the film substrate 10 is a PP film, the vacuum coating equipment is vacuum evaporation coating equipment, and the first metal coating 20 is a copper plating layer;
s2, forming a 600nm second metal coating 30 on the outer surface of the first metal coating 20 through a water plating device, wherein the water plating device is alkaline water plating equipment, and the second metal coating 30 is a copper plating layer;
s3, using a coating composite device, coating a PI material on the outer surface of the second metal coating 30 on one side to form a PI film 40 with the thickness of 1 mu m;
s4, drying the semi-finished film formed in the step S3, wherein the baking temperature is 90 ℃, the baking time is 2min, and the loss of adhesive force caused by the fact that the baking is completely dry is avoided; as shown in fig. 4, the laminated structure of the semi-finished film formed by compounding the PI film 40;
s5, compounding the PE film 50 with the thickness of 2 mu m on the outer surface of the PI film 40 by using a coating compounding device, wherein the coating compounding device adopted in the step is the same as the coating compounding device in the step S3, and the structure and principle of the coating compounding device are not described in detail in the embodiment because the coating compounding device is very mature in the prior art;
s6, coating a film on the other surface of the PE film 50 by using magnetron sputtering coating equipment to form a 50nm third metal coating 60, wherein the third metal coating 60 is a copper plating layer;
s7, coating a film on the outer surface of the third metal coating 60 through a water plating device to form a 900nm fourth metal coating 70, wherein in the step, the water plating device is acid water plating equipment, and the fourth metal layer is a copper plating layer; fig. 1 is a schematic structural diagram of the fourth metal plating layer 70 after being formed;
s8, stripping the film substrate 10 by using a stripping machine to form a 5-mu m finished film, wherein the single-sided sheet resistance is within 20mΩ; as shown in fig. 2, a schematic cross-sectional view of the finished film.
Based on the preparation method, the limit on the thickness of the external film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in evaporation plating in the prior art line is avoided; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
In addition, the invention also discloses a current collection and transmission material, which comprises the conductive film formed in the embodiment; the energy storage device comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the cathode pole piece is made of the current collecting and transmitting material.
Example 3
As shown in fig. 3, the present invention discloses a method for preparing a conductive film, which comprises the following steps:
s1, coating a film on one surface of a film substrate 10 with the thickness of 8 mu m by adopting vacuum coating equipment to form a first metal coating 20 with the thickness of 100nm, wherein the film substrate 10 is a PE film, the vacuum coating equipment is magnetron sputtering coating equipment, and the first metal coating 20 is a copper plating layer;
s2, forming a 900nm second metal coating 30 on the outer surface of the first metal coating 20 through a water plating device, wherein the water plating device is acid water plating equipment, and the second metal coating 30 is a copper plating layer;
s3, using a coating composite device, coating a PI material on the outer surface of the second metal coating 30 on one side to form a PI film 40 with the thickness of 1 mu m;
s4, drying the semi-finished film formed in the step S3; the baking temperature is 80 ℃, the baking time is 1.5min, and the loss of adhesive force caused by baking to complete dryness is avoided; as shown in fig. 4, the layer structure of the semi-finished film formed after the PI film 40 is coated;
s5, compounding the PET film 50 with the thickness of 3 μm on the outer surface of the PI film 40 by using a coating compounding device, wherein the coating compounding device adopted in the step is the same as the coating compounding device in the step S3, and the structure and principle of the coating compounding device are not described in detail in the embodiment because the coating compounding device is very mature in the prior art.
S6, coating a film on the other surface of the PET film 50 by using magnetron sputtering coating equipment to form a 10nm third metal coating 60, wherein the third metal coating 60 is a copper plating layer;
s7, coating a film on the outer surface of the third metal coating 60 through a water plating device to form a 900nm fourth metal coating 70, wherein in the step, the water plating device is acid water plating equipment, and the fourth metal layer is a copper plating layer; fig. 1 is a schematic structural diagram of the fourth metal plating layer 70 after being formed;
s8, stripping the film substrate 10 by using a stripping machine to form a finished film with 6 mu m, wherein the single-sided sheet resistance is within 20mΩ; as shown in fig. 2, a schematic cross-sectional view of the finished film.
Based on the preparation method, the limit on the thickness of the external film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in evaporation plating in the prior art line is avoided; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
In addition, the invention also discloses a current collection and transmission material, which comprises the conductive film formed in the embodiment; the energy storage device comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the cathode pole piece is made of the current collecting and transmitting material.
Example 4
Referring to fig. 1, the present invention discloses a conductive film, which comprises a film substrate 10, a first metal plating layer 20, a second metal plating layer 30, a PI film 40, a PP film 50, a third metal plating layer 60 and a fourth metal plating layer 70; the first metal coating 20 is formed on one surface of the film substrate 10 by a vacuum coating device, the second metal coating 30 is formed on the first metal coating 20 by a water plating device, so that the first metal coating 20 and the second metal coating 30 are formed on one surface of the film substrate 10, in this embodiment, the film substrate 10 is a PET film with a thickness of 15 μm, the thickness of the first metal coating 20 is 100nm, and the thickness of the second metal coating 30 is 800nm.
Further, the PI film 40 is formed by coating PI material on one surface of the outer surface of the second metal coating 30 by a coating and compounding device, and the PP film 50 is compounded on the PI film 40 by the coating and compounding device, wherein the thickness of the PI film 40 is 0.5 μm, and the thickness of the PP film 50 is 3.5 μm. The third metal coating 60 is formed on the outer surface of the PP film 50 by a magnetron sputtering coating device, and the fourth metal coating 70 is formed on the third metal coating 60 by a water plating device; the thickness of the third metal plating layer 60 is 10nm, and the thickness of the fourth metal plating layer 70 is 900nm. As shown in fig. 1 and 2, the film substrate 10 was peeled off after the fourth metal plating layer 70 was formed, and the thickness of the final film formed after peeling off the film substrate 10 was 6 μm. In this embodiment, the first metal plating layer 20, the second metal plating layer 30, the third metal plating layer 60 and the fourth metal plating layer 70 are copper plating layers.
In the above embodiment 4, the vacuum coating apparatus is a magnetron sputtering coating apparatus, and the water plating device is an alkaline water plating apparatus.
In this embodiment, the limitation on the thickness of the outer film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in the evaporation plating in the prior art circuit is avoided; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
Example 5
In this embodiment, a method for producing a conductive film is provided, which is exactly the same as that of embodiment 1, and thus the steps of the production method are not described in detail in this embodiment, but only the thickness of the film base 10 and the respective plating layers are different, wherein in this embodiment, the thickness of the film base 10 is 20 μm, the thickness of the first metal plating layer 20 is 50nm, the thickness of the second metal plating layer 30 is 800nm, the thickness of the pi film 40 is 1 μm, the thickness of the PP film 50 is 2.5 μm, the thickness of the third metal plating layer 60 is 15nm, and the thickness of the fourth metal plating layer 70 is 800nm. The thickness of the finished film after molding was 5. Mu.m.
In all the embodiments, the thickness of the PI film is controlled between 0.5 and 1 mu m, the thickness of the PP film compounded on the PI film is controlled between 2 and 3.5 mu m, and the film has the advantages of smaller resistance, higher capacity density, lighter weight and the like compared with the common copper foil or other copper-plated films. The magnetron sputtering coating equipment generally comprises a vacuum cavity, and an unreeling mechanism, a reeling mechanism, a cooling main drum, an unreeling swing frame and a reeling swing frame which are arranged in the vacuum cavity, wherein the unreeling mechanism and the reeling mechanism are arranged up and down, one side of the film substrate 10 is coated through one cooling main drum after passing through the unreeling mechanism, and the reeling mechanism is used for reeling materials to realize coating on the film substrate 10. The alkaline water plating device generally comprises an unreeling roll, a reeling roll and a plurality of electroplating devices arranged between the unreeling roll and the reeling roll, wherein each electroplating device comprises a plurality of plating baths and oxidation resistance baths, and further comprises a transition roll, a flattening roll, a tension roll and other structures, and the purpose of the alkaline water plating device is to sequentially pass through the plurality of plating baths for the film substrate 10 to form a metal plating layer meeting requirements on the surface of the film substrate 10. In addition, since the structure of the vacuum evaporation plating and acid water plating apparatuses is also mature in the prior art, the above-described embodiments have not been described in detail.
While the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are included in the scope of the present invention as defined in the appended claims.
Claims (12)
1. A conductive film, characterized in that: the coating comprises a first metal coating, a second metal coating, a PI film, a transition film, a third metal coating and a fourth metal coating;
the thickness of the first metal coating is 50-200nm, and the first metal coating is formed on one surface of the film substrate through vacuum coating equipment;
the thickness of the second metal coating is 600-900nm, and the second metal coating is formed on the first metal coating through a water plating device;
the thickness of the PI film is 0.5-1 mu m, and the PI film is single-sided compounded on the outer surface of the second metal coating through coating compounding equipment;
the thickness of the transition film is 2-3.5 mu m, and the transition film is compounded on the PI film through coating compounding equipment;
the thickness of the third metal coating is 5-50nm, and the third metal coating is formed on the outer surface of the transition film through magnetron sputtering coating equipment;
the thickness of the fourth metal coating is 600-900nm, and the fourth metal coating is formed on the third metal coating through a water plating device;
the first metal plating layer, the second metal plating layer, the third metal plating layer and the fourth metal plating layer are copper plating layers;
the transition film is a PP film, a PE film or a PET film;
and stripping the film substrate after the fourth metal coating is formed, so as to form a finished film of the conductive film.
2. The conductive film according to claim 1, wherein: the film base material is a PP film, a PE film or a PET film.
3. The conductive film according to claim 1, wherein: the thickness of the film substrate is 12-20 mu m.
4. A method for preparing a conductive film, comprising the steps of:
s1, coating a film on one surface of a film substrate by adopting vacuum coating equipment to form a first metal coating with the thickness of 50-200nm;
s2, forming a 600-900nm second metal coating on the outer surface of the first metal coating through a water plating device;
s3, coating PI material on the outer surface of the second metal coating by using coating composite equipment to form a PI film of 0.5-1 mu m;
s4, drying the product in the step S3;
s5, compounding a PP film, a PE film or a PET film with the thickness of 2-3.5 mu m on the outer surface of the PI film through coating compounding equipment;
s6, coating a film on the other surface of the PP film, the PE film or the PET film by using magnetron sputtering coating equipment to form a third metal coating of 5-50nm;
s7, coating a film on the outer surface of the third metal coating through a water plating device to form a fourth metal coating with the thickness of 600-900nm;
s8, stripping the film base material to form a finished film of the conductive film.
5. The method for producing a conductive film according to claim 4, wherein: in the step S1, the vacuum coating device is a vacuum evaporation coating device or a magnetron sputtering coating device.
6. The method for producing a conductive film according to claim 4, wherein: in the step S1, the film substrate is a PP film, a PE film or a PET film.
7. The method for producing a conductive film according to claim 4, wherein: in the step S4, the baking temperature is 70-90 ℃ and the baking time is 1-2min.
8. The method for producing a conductive film according to claim 4, wherein: the first metal plating layer, the second metal plating layer, the third metal plating layer and the fourth metal plating layer are copper plating layers.
9. The method for producing a conductive film according to claim 4, wherein: in the step S2 and the step S7, the water plating device is alkaline water plating equipment or acid water plating equipment.
10. The method for producing a conductive film according to claim 4, wherein: in the step S8, a stripper is used to strip the film substrate.
11. A current collecting and transporting material, characterized in that: a conductive film comprising any one of claims 1-10.
12. The utility model provides an energy storage device, includes negative pole piece, positive pole piece, barrier film, electrolyte and packaging material, its characterized in that: the cathode sheet using the current collecting and transporting material according to claim 11.
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| CN202010853027.0A CN114075655B (en) | 2020-08-22 | 2020-08-22 | Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device |
| PCT/CN2020/123844 WO2022041444A1 (en) | 2020-08-22 | 2020-10-27 | Conductive thin film, preparation method for conductive thin film, electric current collection and transmission material, and energy storage device |
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| CN107123812A (en) * | 2017-04-14 | 2017-09-01 | 安徽众智金谷能源科技有限责任公司 | Positive current collector, and preparation method and application thereof |
| CN111455337A (en) * | 2020-04-30 | 2020-07-28 | 深圳市汉嵙新材料技术有限公司 | Single-side conductive copper-plated PI film and preparation method thereof |
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| CN108531876A (en) * | 2018-03-26 | 2018-09-14 | 安徽金美新材料科技有限公司 | A kind of coating process flow for lithium battery collector |
| JP2020012156A (en) * | 2018-07-18 | 2020-01-23 | 住友金属鉱山株式会社 | Method for producing copper-clad laminate |
| CN209447145U (en) * | 2019-04-30 | 2019-09-27 | 南昌欧菲显示科技有限公司 | Conductive film, touch device and electronic device |
| CN110362230B (en) * | 2019-07-10 | 2022-08-30 | 合肥微晶材料科技有限公司 | Ultrathin flexible bending-resistant touch screen |
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| CN107123812A (en) * | 2017-04-14 | 2017-09-01 | 安徽众智金谷能源科技有限责任公司 | Positive current collector, and preparation method and application thereof |
| CN111455337A (en) * | 2020-04-30 | 2020-07-28 | 深圳市汉嵙新材料技术有限公司 | Single-side conductive copper-plated PI film and preparation method thereof |
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