CN114068837A - Thin film packaging structure, preparation method thereof, light-emitting device and display device - Google Patents
Thin film packaging structure, preparation method thereof, light-emitting device and display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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Abstract
The invention relates to a thin film packaging structure and a preparation method thereof, a light-emitting device and a display device. The invention provides a more stable and effective thin film packaging structure, which can effectively improve the binding force and the adhesion effect of a first inorganic barrier layer and a first organic barrier layer, thereby improving the packaging effect.
Description
Technical Field
The invention relates to the technical field of display, in particular to a thin film packaging structure, a preparation method of the thin film packaging structure, a light-emitting device and a display device.
Background
Light emitting devices such as OLED and QLED are widely used in the fields of mobile phone screens, computer monitors, full-color televisions, etc., and are receiving wide attention from the industry. Since the luminescent material and metal in the luminescent device are sensitive to oxygen and moisture, they need to be encapsulated and protected during the preparation process. The Thin Film Encapsulation (TFE) is a packaging technology suitable for display panels such as narrow-frame and flexible OLEDs, and is used to ensure that water and oxygen cannot penetrate into the product, thereby avoiding display abnormalities, and thus the packaging effect directly affects the product quality. A typical thin film encapsulation structure is formed by repeatedly overlapping an inorganic material layer and an organic material layer, wherein the inorganic material layer is a water-oxygen barrier layer and mainly functions to block water and oxygen, and the organic material layer is a planarization layer and mainly functions to cover defects (including particles, pins, and the like) on the surface of the inorganic material layer, provide a flat surface for subsequent film formation, reduce stress on the surface of the inorganic material layer, and prevent defect propagation. However, due to the difference between the organic material layer and the inorganic material layer, the adhesion between the organic material layer and the inorganic material layer is poor and the difference between the material stresses is easily generated, and the flexible display screen needs to be bent for many times, so that a micro gap is easily generated between the organic material layer and the inorganic material layer, and external water and oxygen molecules permeate into the screen through the micro gap, thereby partially causing the packaging failure.
Disclosure of Invention
In view of the above, there is a need for a thin film encapsulation structure with improved bending resistance and encapsulation performance.
A thin film packaging structure comprises a first inorganic barrier layer, a first buffer layer and a first organic barrier layer, wherein the first buffer layer is arranged between the first inorganic barrier layer and the first organic barrier layer; the first buffer layer includes a first compound of an organic nature and a second compound of an inorganic nature; the mass ratio of the first compound to the second compound in the first buffer layer gradually increases in a direction from the first inorganic barrier layer to the first organic barrier layer.
The invention provides a more stable and effective thin film packaging structure, wherein a first buffer layer with gradually changed proportions of a first compound with organic property and a second compound with inorganic property is arranged between a first inorganic barrier layer and a first organic barrier layer, the proportion of the second compound on one side of the first buffer layer close to the first inorganic barrier layer is high, the first buffer layer can be better bonded with the first inorganic barrier layer, and the proportion of the first compound on one side close to the first organic barrier layer is high, so that the first organic barrier layer can be better bonded with the first organic barrier layer. So, can promote cohesion and adhesion effect between first inorganic barrier layer, the first organic barrier layer effectively to improve the encapsulation effect. Even if the flexible display screen is bent for many times, the organic barrier layer and the inorganic barrier layer are still tightly bonded together, no micro cracks or gaps are generated, and extremely strong adhesive force is displayed, so that the water and oxygen barrier capability of the flexible display screen is ensured, external water and oxygen molecules are prevented from permeating into the display panel/display screen, and the quality and the service life of the display panel/display screen are ensured.
In one embodiment, the organic light emitting device further comprises a second buffer layer and a second inorganic barrier layer, wherein the second buffer layer is arranged between the first organic barrier layer and the second inorganic barrier layer; the second buffer layer includes a first compound and a second compound, and a mass ratio of the first compound to the second compound in the second buffer layer is gradually decreased in a direction from the first organic barrier layer to the second inorganic barrier layer.
In one embodiment, the first compound in the first buffer layer and the second buffer layer is independently selected from SiOxCyAnd SiOxNyIs selected from the group consisting of silicides.
In one embodiment, a mass ratio of the first compound to the second compound in the first buffer layer and/or the second buffer layer is [0.05, 0.95], and the mass ratio of the first compound to the second compound varies by 0.1 every 50nm to 100nm in a thickness direction of the first buffer layer and/or the second buffer layer.
In one embodiment, the thickness of the first buffer layer and/or the second buffer layer is 500nm to 1500 nm.
In one embodiment, the material of the first inorganic barrier layer and the second inorganic barrier layer is silicide, and the material of the first organic barrier layer is one or more of acrylate and epoxy resin.
In one embodiment, the thin film encapsulation structure further includes a third inorganic barrier layer disposed on a side of the first inorganic barrier layer away from the first buffer layer, and the third inorganic barrier layer is made of an inorganic oxide.
The invention also provides a preparation method of the film packaging structure, which comprises the following steps:
forming a first inorganic barrier layer;
forming a first buffer layer on the first inorganic barrier layer;
a first organic barrier layer is formed on the first buffer layer.
In one embodiment, the first buffer layer is formed by a chemical vapor deposition method or a physical vapor deposition method.
In one embodiment, the method of forming the first buffer layer includes the steps of: with SiH4、NH3And N2And O is used as a raw material, and the mass ratio of the first compound to the second compound in the first buffer layer is controlled by adjusting the introduction ratio of each raw material in the chemical vapor deposition process.
In one embodiment, the method of forming the first buffer layer includes the steps of: with hexamethyldisiloxane, tetramethylsilane, N2And N2And O is used as a raw material, and the mass ratio of the first compound to the second compound in the first buffer layer is controlled by adjusting the introduction ratio of each raw material in the chemical vapor deposition process.
The invention also provides a light-emitting device which comprises a substrate, a light-emitting unit and the film packaging structure, wherein the light-emitting unit is arranged on the substrate, the film packaging structure is arranged on the substrate and covers the light-emitting unit, and the first inorganic blocking layer is positioned between the light-emitting unit and the first buffer layer.
The invention also provides a display device which comprises the film packaging structure or the light-emitting device.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting device according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations. In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature. It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, a thin film package structure 100 according to an embodiment of the invention includes a first inorganic barrier layer 110, a first buffer layer 120, and a first organic barrier layer 130, wherein the first buffer layer 120 is disposed between the first inorganic barrier layer 110 and the first organic barrier layer 130.
The first buffer layer 120 includes a first compound of an organic nature and a second compound of an inorganic nature. The mass ratio of the first compound to the second compound in the first buffer layer 120 gradually increases in a direction from the first inorganic barrier layer 110 to the first organic barrier layer 130.
The invention provides a more stable and effective thin film packaging structure 100, wherein a first buffer layer 120 with gradually changing proportions of a first compound with organic properties and a second compound with inorganic properties is arranged between a first inorganic barrier layer 110 and a first organic barrier layer 130, the proportion of the second compound on one side of the first buffer layer 120 close to the first inorganic barrier layer 110 is high, so that the first inorganic barrier layer 110 can be better bonded, and the proportion of the first compound on one side close to the first organic barrier layer 130 is high, so that the first organic barrier layer 130 can be better bonded. Therefore, the bonding force and the adhesion effect between the first inorganic barrier layer 110 and the first organic barrier layer 130 can be effectively improved, thereby improving the packaging effect. Even if the flexible display screen is bent for many times, the organic barrier layer and the inorganic barrier layer are still tightly bonded together, no micro cracks or gaps are generated, and extremely strong adhesive force is displayed, so that the water and oxygen barrier capability of the flexible display screen is ensured, external water and oxygen molecules are prevented from permeating into the display panel/display screen, and the quality and the service life of the display panel/display screen are ensured. It is understood that the first compound is an organic compound, but not limited to organic, and the second compound is an inorganic compound, but not limited to inorganic.
In a specific example, the thin film encapsulation structure 100 further includes a second buffer layer 140 and a second inorganic barrier layer 150, and the second buffer layer 140 is disposed between the first organic barrier layer 130 and the second inorganic barrier layer 150. The second buffer layer 140 includes a first compound and a second compound, and a mass ratio of the first compound to the second compound in the second buffer layer 140 is gradually decreased in a direction from the first organic barrier layer 130 to the second inorganic barrier layer 150. Thus, the second buffer layer 140 with gradually changing proportions of the first compound and the second compound is arranged between the first organic barrier layer 130 and the second inorganic barrier layer 150, the proportion of the first compound on one side of the second buffer layer 140 close to the first organic barrier layer 130 is high, the first organic barrier layer 130 can be bonded better, the proportion of the second compound on one side close to the second inorganic barrier layer 150 is high, the second inorganic barrier layer 150 can be bonded better, and the adhesion effect and the packaging effect are further improved.
In a specific example, the first compound in the first buffer layer 120 and the second buffer layer 140 is independently selected from SiOxCy(carbooxysilicon Compound) and SiOxNy(oxynitride silicon compound), the second compound is selected from silicide.
In a specific example, the mass ratio of the first compound to the second compound in the first buffer layer 120 and/or the second buffer layer 140 is 0.05 at a minimum and 0.95 at a maximum, and the mass ratio of the first compound to the second compound varies by 0.1 every 50nm to 100nm in the thickness direction of the first buffer layer 120 and/or the second buffer layer 140, thereby improving bending resistance and encapsulation performance.
In a specific example, the thickness of the first buffer layer 120 and/or the second buffer layer 140 is 500nm to 1500 nm.
In a specific example, the first inorganic barrier layer 110 and the second inorganic barrier layer 150 are made of silicide, and the inorganic silicide is deposited above the light emitting unit, so that the higher compactness of atomic layer deposition can be fully utilized to protect the functional layer material of the light emitting unit from being corroded by water and oxygen, and a higher water and oxygen barrier effect is achieved; the material of the first organic barrier layer 130 is one or more of acrylate and epoxy resin, and the first organic barrier layer 130 provides a flat surface for subsequent film formation, and can also cover defects on the surface of the inorganic barrier layer, eliminate residual stress, and prolong the permeation path of water and oxygen, thereby further enhancing the water and oxygen barrier capability of the packaging layer. Optionally, the material of the first inorganic barrier layer 110 and the second inorganic barrier layer 150 is silicon nitride (SiN)x) And silicon oxide (SiO)2) One or more of (a). It can be understood that the materials of the first inorganic barrier layer 110 and the second inorganic barrier layer 150 may be the same or different, and the first inorganic barrier layer 110 and the second inorganic barrier layer 150 have the characteristics of uniformity, compactness, strong water-oxygen barrier capability, and the like, and can effectively prevent the light emitting device from receiving waterAnd deterioration due to the influence of oxygen permeation.
In one specific example, the thin film encapsulation structure 100 further includes a third inorganic barrier layer 160, and the third inorganic barrier layer 160 is disposed on a side of the first inorganic barrier layer 110 away from the first buffer layer 120. Optionally, the material of the third inorganic barrier layer 160 is an inorganic oxide. Optionally, the material of the third inorganic barrier layer 160 is one or more of aluminum oxide, silicon oxide, and titanium oxide.
The method for manufacturing the film encapsulation structure according to an embodiment of the present invention includes the following steps S1 to S5:
and S1, forming a first inorganic barrier layer.
And S2, forming a first buffer layer on the first inorganic barrier layer.
And S3, forming a first organic barrier layer on the first buffer layer.
And S4, forming a second buffer layer on the first organic barrier layer.
And S5, forming a second inorganic barrier layer on the second buffer layer.
In one specific example, the first buffer layer and the second buffer layer are formed by a chemical vapor deposition method or a physical vapor deposition method.
In one specific example, a method of forming a first buffer layer or a second buffer layer includes the steps of: with SiH4、NH3And N2And O is used as a raw material, and the mass ratio of the first compound to the second compound in the first buffer layer or the second buffer layer is controlled by adjusting the introduction ratio of the raw materials in the chemical vapor deposition process. Alternatively, when the first buffer layer is formed, N2O:NH3The ratio is gradually increased from an initial value (0-5): 100 to (30-40): 100. Optionally, when forming the second buffer layer, N2O:NH3The ratio is gradually decreased from an initial value (30-40): 100 to (0-5): 100.
In one specific example, a method of forming a first buffer layer or a second buffer layer includes the steps of: with hexamethyldisiloxane, tetramethylsilane, N2And N2O is used as raw material, and the introduction of each raw material is regulated in the chemical vapor deposition processThe mass ratio of the first compound to the second compound in the first buffer layer or the second buffer layer is controlled in proportion.
In one specific example, the first inorganic barrier layer is formed by chemical vapor deposition or plasma enhanced chemical vapor deposition. The inorganic silicide is deposited above the light-emitting unit, so that the higher compactness of atomic layer deposition can be fully utilized, the functional layer material of the light-emitting unit is protected from being corroded by water and oxygen, and the higher water and oxygen blocking effect is achieved.
In a specific example, the first organic barrier layer is formed by an inkjet printing method, a coating method, a spin coating method, or the like. The first organic barrier layer can cover larger defects or foreign matters existing in the middle of the film layer, so that the film packaging effect is further optimized and improved.
As shown in fig. 1, a light emitting device 200 according to an embodiment of the invention includes a substrate 201, a light emitting unit 202 and the thin film encapsulation structure 100, wherein the light emitting unit 202 is disposed on the substrate 201, the thin film encapsulation structure 100 is disposed on the substrate 201 and covers the light emitting unit 202, and the first inorganic barrier layer 110 is disposed between the light emitting unit 202 and the first buffer layer 120.
In a specific example, the light emitting unit 202 includes a first electrode, a second electrode, and a light emitting layer disposed between the first electrode and the second electrode. Optionally, the light emitting unit 202 further includes a hole function layer disposed between the light emitting layer and the anode, the hole function layer including one or more of a hole injection layer and a hole transport layer, and an electron function layer disposed between the cathode and the light emitting layer, the electron function layer including one or more of an electron transport layer, a hole blocking layer, and an electron injection layer. It is understood that the hole injection layer and the hole transport layer are stacked and the hole injection layer is located at a side close to the anode, and the hole blocking layer, the electron transport layer and the electron injection layer are sequentially stacked and the hole blocking layer is located at a side close to the anode. Optionally, the overall thickness of the hole functional layer, the light emitting layer and the electron functional layer is 500nm to 1200nm, and different process conditions and thicknesses are different.
In one specific example, the hole injection layer is made of a polymer material and has a property that it does not undergo heat treatmentSolvent properties such as PEDT/PSS (silane-containing coupling agent), Nissan SHI-2520, and Nissan SHI-X04; the hole injection layer can also adopt small molecule materials which are of evaporation type and insoluble in polar solvents, including but not limited to DNTPD, MeO-TPD, m-MTDATA, NATA, NPNPB and the like. Alternatively, the hole transport layer is an organic molecule having a deeper HOMO level and higher hole mobility, including but not limited to aromatic compounds, carbazole-based compounds, organometallic complexes, and the like. Optionally, the material of the electron transport layer is an organic molecule with a shallow LUMO energy level and a high electron mobility, including but not limited to oxazole compounds, metal chelates, and quinoline compounds. Optionally, the electron transport layer is made of an N-type inorganic semiconductor material, the hole blocking layer is made of a wide band gap insulating material, and the effect of the evaporation process is good. Optionally, the thickness of the electron transport layer is 30nm to 80nm, and the thickness of the hole blocking layer is 3nm to 10 nm. Specifically, the electron transport layer is made of one or more of ZnO, TiO and ZnMgO, and the hole blocking layer is made of MgO and ZrO2、Ga2O3、La2O3、Nd2O3And Yb2O3One or more of (a).
In one specific example, the substrate 201 includes a substrate including a rigid substrate and a flexible substrate, such as glass, PI, etc., and an array driving unit for driving the electroluminescent pixel cells.
The display device according to an embodiment of the invention includes the thin film encapsulation structure 100 or the light emitting device 200.
The following are specific examples.
Example 1
As shown in fig. 1, the light emitting device 200 of the present embodiment includes a flexible substrate 201, a light emitting unit 202, and a thin film encapsulation structure 100. The flexible substrate 201 is mainly made of a polyimide film (PI) and a derivative thereof, and the light emitting unit 202 is mainly composed of a hole injection material ink, a hole transport ink material, a light emitting layer material ink, an electron transport material ink, an electron injection material ink, and the like. The film package structure 100 is sequentially a third inorganic barrierThe layer 160, the first inorganic barrier layer 110, the first buffer layer 120, the first organic barrier layer 130, the second buffer layer 140, and the second inorganic layer 150. The first and second buffer layers 120 and 140 are formed by chemical vapor deposition or physical vapor deposition to form silicon oxynitride (SiO)xNy) Depositing the silicon nitride film to a thickness of about 500nm to 1000nm, and testing a single layer of silicon oxynitride (SiO)xNy) The Water Vapor Transmission Rate (WVTR) of the film is 3.0E-5, namely the buffer layer body has better water oxygen barrier effect.
The method for manufacturing the thin film encapsulation structure 100 includes the following steps:
first, a third inorganic barrier layer 160 is formed on the light emitting unit 202 by ion beam deposition, aluminum oxide is deposited, the thickness of the aluminum oxide film is 15nm to 50nm, and a first water and oxygen barrier layer is formed on the organic functional material layer of the light emitting unit 202 by using a dense aluminum oxide film.
Next, the first inorganic barrier layer 110 is formed on the third inorganic barrier layer 160 by a chemical vapor deposition method, and silicon nitride is deposited, wherein the thickness of the silicon nitride film is 300nm to 500 nm.
Then, a first buffer layer 120 is formed on the first inorganic barrier layer 110 by chemical vapor deposition, and a silicon oxynitride SiO is depositedxNyThe thickness of the film is 1000 nm. In the chemical vapor deposition process, SiH is regulated and controlled4、NH3And N2The proportion of the flow of the three gases O is properly increased at the early stage3Introducing the ratio to reduce N2Introduction ratio of O to N2O:NH3The initial ratio is 5:100, so that the ratio of inorganic nitrogen silicide is higher, the first inorganic barrier layer 110 is better bonded, and after 3-5 min, the N is gradually increased2The introduction ratio of O is higher, the ratio of the nitrogen-oxygen-silicon compound gradually transited to the organic-like property is higher, and N is higher2O:NH3The ratio was gradually increased to 36:100 to form a crosslinked layer, better combining the inorganic and organic layer materials. The mass ratio of the first compound to the second compound in the first buffer layer 120 is at least 0.05 and at most 0.95, and the first compound is spaced at intervals of 100nm in the thickness direction of the first buffer layer 120The mass ratio of the compound to the second compound varied by 0.1.
The first organic barrier layer 130 is manufactured on the first buffer layer 120 by a coating method or a spin-coating method, a layer of epoxy resin material with a thickness of 10 μm to 20 μm is coated, and the uniformly coated epoxy resin material can be well covered on the first buffer layer 120 to cover a few large defects or foreign matters, so that the packaging effect is further enhanced, and the coated epoxy resin material layer can be cured by ultraviolet light or by thermal baking.
Then, a second buffer layer 140 is formed on the first organic barrier layer 130 by chemical vapor deposition, and a silicon oxynitride SiO is depositedxNyThe thickness of the film is 1000 nm. In the chemical vapor deposition process, SiH is regulated and controlled4、NH3And N2The flow rate of the three gases O is properly reduced NH in the early stage3Introducing the proportion to promote N2Introduction ratio of O to N2O:NH3The initial ratio is 36:100, so that the ratio of the organic-like nitrogen-oxygen-silicon compound is higher, the first organic barrier layer 130 is better combined, and NH is gradually increased after 5-10 min3The proportion of nitrogen-silicon compound is higher, N is higher2O:NH3The ratio gradually decreased to 5:100, thereby forming a crosslinked layer, better combining the inorganic and organic layer materials. The mass ratio of the first compound to the second compound in the second buffer layer 140 is 0.05 at the minimum and 0.95 at the maximum, and the mass ratio of the first compound to the second compound varies by 0.1 per 100nm in the thickness direction of the first buffer layer 120.
Finally, a second inorganic barrier layer 150 is formed on the second buffer layer 140 by CVD, and a SiN layer is deposited thereonx，SiNxThe thickness of the film is 400 nm-800 nm.
After being bent for many times, the organic barrier layer and the inorganic barrier layer are still tightly bonded together, and micro cracks and gaps are not generated.
Example 2
As shown in fig. 1, the light emitting device of the present embodiment200 includes a flexible substrate 201, a light emitting unit 202, and a thin film encapsulation structure 100. The flexible substrate 201 is mainly made of a polyimide film (PI) and a derivative thereof, and the light emitting unit 202 is mainly composed of a hole injection material ink, a hole transport ink material, a light emitting layer material ink, an electron transport material ink, an electron injection material ink, and the like. The thin film package structure 100 is sequentially formed by a third inorganic barrier layer 160, a first inorganic barrier layer 110, a first buffer layer 120, a first organic barrier layer 130, a second buffer layer 140, and a second inorganic layer 150. The first buffer layer 120 and the second buffer layer 140 are formed of a silicon oxycarbide (SiO) compound by a chemical vapor deposition methodxCy) Depositing to a thickness of about 500nm to 1000nm and testing a single layer of a silicon oxycarbide (SiO)xCy) The Water Vapor Transmission Rate (WVTR) of the film is 1.0E-5, namely the buffer layer body has better water oxygen barrier effect.
The method for manufacturing the thin film encapsulation structure 100 includes the following steps:
firstly, an atomic layer deposition method is used to fabricate a third inorganic barrier layer 160 above the light-emitting unit 202, silicon dioxide is deposited, the thickness of the silicon dioxide film is 10 nm-20 nm, and a first water-oxygen barrier layer is formed on the organic functional material layer of the light-emitting unit 202 by using a compact silicon dioxide film.
Next, the first inorganic barrier layer 110 is formed on the third inorganic barrier layer 160 by a chemical vapor deposition method, and silicon dioxide is deposited, wherein the thickness of the silicon dioxide film is 300nm to 500 nm.
Then, a first buffer layer 120 is formed on the first inorganic barrier layer 110 by chemical vapor deposition, and a silicon-oxy-carbon compound SiO is depositedxCyThe thickness of the film is 500 nm-1000 nm. Adjusting and controlling Hexamethyldisiloxane (HMDSO), tetramethylsilane, N in chemical vapor deposition process2And N2The proportion of O gas flow is properly increased by N in the early stage2The ratio of O is introduced to make the ratio of the silicon oxide compound with inorganic property higher, so as to better bond the first inorganic barrier layer 110, after 3-5 min, the ratio of introducing tetramethylsilane is gradually increased, the ratio of gradually transitioning to the silicon oxide compound with organic property is higher, and the silicon oxide compound with organic property is obtained from the stepThereby forming a cross-linked layer to better bond the inorganic layer and the organic layer material.
The first organic barrier layer 130 is manufactured on the first buffer layer 120 through an ink-jet printing method, a layer of acrylate material with the thickness of 10-20 microns is sprayed, the printed material is subjected to leveling treatment on the first buffer layer 120 for 2-5 min, a few of large defects or foreign matters on the first buffer layer 120 can be well covered, and then the printed material is cured through ultraviolet light or through thermal baking to form a thin layer with uniform thickness.
Then, a second buffer layer 140 is formed on the first organic barrier layer 130 by chemical vapor deposition, and a silicon-oxy-carbon compound SiO is depositedxCyThe thickness of the film is 500 nm-1000 nm. Adjusting and controlling Hexamethyldisiloxane (HMDSO), tetramethylsilane, N in chemical vapor deposition process2And N2The proportion of O gas flow is increased properly in the early stage to increase the proportion of the tetramethylsilane to the organic-like carbon oxygen silicon compound, so that the first organic barrier layer 130 is better combined, and after 5-10 min, the N is gradually increased2The proportion of the nitrogen silicon compound which is gradually transited to the inorganic-like property is higher, thereby forming a crosslinking layer and better combining the inorganic layer and the organic layer material.
Finally, a second inorganic barrier layer 150 is formed on the second buffer layer 140 by CVD, and a SiN layer is deposited thereonx，SiNxThe thickness of the film is 400 nm-800 nm.
After being bent for many times, the organic barrier layer and the inorganic barrier layer are still tightly bonded together, and micro cracks and gaps are not generated.
Comparative example 1
The light emitting device of the present comparative example includes a flexible substrate, a light emitting unit, and a thin film encapsulation structure. The flexible substrate is mainly made of a polyimide film (PI) and derivatives thereof, and the light-emitting unit is mainly composed of hole injection material ink, a hole transport ink material, light-emitting layer material ink, electron transport material ink, electron injection material ink and the like. The film packaging structure is composed of a third inorganic barrier layer, a first organic barrier layer and a second inorganic layer in sequence.
The preparation method of the thin film packaging structure comprises the following steps:
firstly, a third inorganic barrier layer is manufactured above the light-emitting unit by using an atomic layer deposition method, and silicon dioxide is deposited, wherein the thickness of a silicon dioxide film is 10 nm-20 nm.
Then, the first inorganic barrier layer is manufactured above the third inorganic barrier layer through a chemical vapor deposition method, and silicon dioxide is deposited, wherein the thickness of a silicon dioxide film is 300 nm-500 nm.
And manufacturing a first organic barrier layer on the first inorganic barrier layer by an ink-jet printing method, spraying a layer of acrylate material with the thickness of 10-20 microns, leveling the printed material on the first buffer layer for 2-5 min, and curing by ultraviolet light or by thermal baking to form a thin layer with uniform thickness.
Finally, a second inorganic barrier layer is manufactured above the first organic barrier layer by a chemical vapor deposition method, and a SiN layer is depositedx，SiNxThe thickness of the film is 400 nm-800 nm.
After bending for many times, micro cracks and gaps are generated between the organic barrier layer and the inorganic barrier layer.
According to the embodiment and the comparative example, the buffer layer with the gradually changed proportion of the first compound and the second compound is arranged between the inorganic barrier layer and the organic barrier layer, so that the inorganic barrier layer and the organic barrier layer can be better bonded, the bonding force and the adhesion effect between the inorganic barrier layer and the organic barrier layer can be effectively improved, and the packaging effect is further improved. Even if the flexible display screen is bent for many times, the organic barrier layer and the inorganic barrier layer are still tightly bonded together, no micro cracks or gaps are generated, and extremely strong adhesive force is displayed, so that the water and oxygen barrier capability of the flexible display screen is ensured, external water and oxygen molecules are prevented from permeating into the display panel/display screen, and the quality and the service life of the display panel/display screen are ensured.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (12)
1. A thin film packaging structure is characterized by comprising a first inorganic barrier layer, a first buffer layer and a first organic barrier layer, wherein the first buffer layer is arranged between the first inorganic barrier layer and the first organic barrier layer; the first buffer layer includes a first compound of an organic nature and a second compound of an inorganic nature; the mass ratio of the first compound to the second compound in the first buffer layer gradually increases in a direction from the first inorganic barrier layer to the first organic barrier layer.
2. The thin film encapsulation structure of claim 1, further comprising a second buffer layer and a second inorganic barrier layer, the second buffer layer being disposed between the first organic barrier layer and the second inorganic barrier layer; the second buffer layer includes the first compound and the second compound, and a mass ratio of the first compound to the second compound in the second buffer layer is gradually decreased in a direction from the first organic barrier layer to the second inorganic barrier layer.
3. The thin film encapsulation structure of claim 2, wherein the first compound in the first buffer layer and the second buffer layer is independently selected from SiOxCyAnd SiOxNyOne or more of the above (a), aThe second compound is selected from silicides.
4. The film encapsulation structure according to claim 2, wherein a mass ratio of the first compound to the second compound in the first buffer layer and/or the second buffer layer is [0.05, 0.95], and the mass ratio of the first compound to the second compound varies by 0.1 per 50nm to 150nm in a thickness direction of the first buffer layer and/or the second buffer layer.
5. The film encapsulation structure according to claim 2, wherein the thickness of the first buffer layer and/or the second buffer layer is 500nm to 1500 nm.
6. The thin film encapsulation structure according to claim 2, wherein the material of the first inorganic barrier layer and the second inorganic barrier layer is silicide, and the material of the first organic barrier layer is one or more of acrylate and epoxy.
7. The thin film encapsulation structure according to any one of claims 1 to 6, further comprising a third inorganic barrier layer disposed on a side of the first inorganic barrier layer away from the first buffer layer, wherein the third inorganic barrier layer is made of an inorganic oxide.
8. A method for preparing a film packaging structure according to any one of claims 1 to 7, comprising the following steps:
forming a first inorganic barrier layer;
forming a first buffer layer on the first inorganic barrier layer;
a first organic barrier layer is formed on the first buffer layer.
9. The production method according to claim 8, wherein the first buffer layer is formed by a chemical vapor deposition method or a physical vapor deposition method.
10. The production method according to claim 9, wherein the method of forming the first buffer layer includes the steps of: with SiH4、NH3And N2And O is used as a raw material, and the mass ratio of the first compound to the second compound in the first buffer layer is controlled by adjusting the introduction ratio of each raw material in the chemical vapor deposition process.
11. The production method according to claim 9, wherein the method of forming the first buffer layer includes the steps of: with hexamethyldisiloxane, tetramethylsilane, N2And N2And O is used as a raw material, and the mass ratio of the first compound to the second compound in the first buffer layer is controlled by adjusting the introduction ratio of each raw material in the chemical vapor deposition process.
12. A light emitting device comprising a substrate, a light emitting unit and the thin film encapsulation structure of any one of claims 1 to 7, wherein the light emitting unit is disposed on the substrate, the thin film encapsulation structure is disposed on the substrate and covers the light emitting unit, and the first inorganic barrier layer is disposed between the light emitting unit and the first buffer layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101697343A (en) * | 2009-10-27 | 2010-04-21 | 苏州纳科显示技术有限公司 | Film encapsulation method |
| CN106848092A (en) * | 2017-01-11 | 2017-06-13 | 瑞声科技（南京）有限公司 | Oled device and preparation method thereof |
| US20190198809A1 (en) * | 2017-12-27 | 2019-06-27 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin-film encapsulation structure and method for oled |
| CN111129339A (en) * | 2019-11-25 | 2020-05-08 | 合肥维信诺科技有限公司 | Thin film packaging structure, preparation method and flexible display screen |
-
2020
- 2020-12-28 CN CN202011580780.3A patent/CN114068837A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101697343A (en) * | 2009-10-27 | 2010-04-21 | 苏州纳科显示技术有限公司 | Film encapsulation method |
| CN106848092A (en) * | 2017-01-11 | 2017-06-13 | 瑞声科技（南京）有限公司 | Oled device and preparation method thereof |
| US20190198809A1 (en) * | 2017-12-27 | 2019-06-27 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin-film encapsulation structure and method for oled |
| CN111129339A (en) * | 2019-11-25 | 2020-05-08 | 合肥维信诺科技有限公司 | Thin film packaging structure, preparation method and flexible display screen |
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