CN114068836A - OLED device and display panel - Google Patents
OLED device and display panel Download PDFInfo
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- CN114068836A CN114068836A CN202111358584.6A CN202111358584A CN114068836A CN 114068836 A CN114068836 A CN 114068836A CN 202111358584 A CN202111358584 A CN 202111358584A CN 114068836 A CN114068836 A CN 114068836A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims description 7
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 abstract description 8
- 229910001416 lithium ion Inorganic materials 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000000969 carrier Substances 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 80
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 7
- 229910052744 lithium Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/166—Electron transporting layers comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The embodiment of the present disclosure provides an OLED device and a display panel, the OLED device at least includes: a CGL, wherein the CGL comprises: the multilayer ETL comprises a plurality of layers of electron transport layers ETL and a plurality of insulating layers, wherein the upper layer and the lower layer which are adjacent to each layer of ETL are insulating layers, the ETL and the insulating layers are sequentially arranged in an overlapping mode, active metal is doped in the ETL, and the plurality of layers of ETL are arranged according to the doping concentration of the active metal with gradient. The embodiment of the disclosure sets the insulating layers on the upper layer and the lower layer adjacent to each layer of ETL, fundamentally solves the problem of service life reduction of devices caused by lithium ion diffusion, sets the multilayer ETL, and the multilayer ETL is arranged according to active metal doping concentration with gradient, can adjust the active metal doping concentration of different layers of ETL according to requirements, not only ensures that sufficient current carriers exist, but also can prevent the transverse electric leakage problem caused by too active transverse movement of lithium ions, and has higher device stability.
Description
Technical Field
The disclosure relates to the field of display, and in particular to an OLED device and a display panel.
Background
When a current flows through an OLED (Organic Light-Emitting diode), holes generated by the anode and electrons generated by the cathode recombine in the Light-Emitting layer and emit Light, and photons with different energies can be emitted according to the difference of excitation energies, so that Light with different colors can be emitted. The organic light-emitting display panel using the OLED device as a display material has the advantages of self-luminescence, wide viewing angle, high contrast and the like, has the characteristics of light weight, thin thickness and bending resistance, and is widely applied to intelligent products such as mobile phones, televisions, notebook computers and the like.
However, for the current display panel with high PPI (pixel density unit, pixel Per Inch), the corresponding CGL structure is formed by doping metal lithium into ETL (electron transport Layer), and the structure is a Layer as shown in fig. 1, because the activity ratio of metal lithium is relatively large and adjacent Pixels are relatively close, the lateral leakage problem is very easy to occur, the device stability is low, and the diffusion of lithium ions in CGL also causes the reduction of the device lifetime.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide an OLED device and a display panel, so as to solve the following problems in the prior art: at present, the CGL structure of the display panel with high PPI is formed by doping ETL with metal lithium, and because the activity ratio of the metal lithium is larger and adjacent pixels are closer, the transverse leakage problem is easily caused, the stability of the device is lower, and the service life of the device is reduced due to lithium ion diffusion in the CGL.
In one aspect, an embodiment of the present disclosure provides an OLED device, which at least includes: a charge generation layer CGL, wherein the CGL comprises: the multilayer ETL comprises a plurality of layers of electron transport layers ETL and a plurality of insulating layers, wherein the upper layer and the lower layer which are adjacent to each layer of ETL are insulating layers, the ETL and the insulating layers are sequentially arranged in an overlapping mode, active metal is doped in the ETL, and the plurality of layers of ETL are arranged according to the doping concentration of the active metal with gradient.
In some embodiments, the insulating layer has a thickness of less than or equal to 10 nm.
In some embodiments, the material of the insulating layer comprises at least one of: aluminum oxide, silicon oxide, molybdenum trioxide and zinc oxide.
In some embodiments, the difference in active metal doping concentration of any two adjacent layers of the ETL is the same.
In some embodiments, the multiple ETLs are sequentially arranged from the middle to both sides according to the doping concentration of the active metal, or the multiple ETLs are arranged from high to low according to the doping concentration of the active metal.
In some embodiments, in a three-layer ETL, the active metal doping concentration of the upper and lower layers ETL is less than the active metal doping concentration of the middle layer ETL.
In some embodiments, the active metal doping concentration of the upper ETL and the lower ETL is 2% and the active metal doping concentration of the middle ETL is 4%.
In some embodiments, in the two-layer ETL, the active metal doping concentration of the upper-layer ETL is greater than the active metal doping concentration of the lower-layer ETL, wherein the upper-layer ETL is the ETL near the anode layer side, and the lower-layer ETL is the ETL near the cathode layer side.
In some embodiments, the active metal doping concentration of the upper ETL is 4% and the active metal doping concentration of the lower ETL is 2%.
In another aspect, an embodiment of the present disclosure provides a display panel, which at least includes: the OLED device according to any one of the embodiments of the present disclosure.
The embodiment of the disclosure sets the insulating layers on the upper layer and the lower layer adjacent to each layer of ETL, fundamentally solves the problem of service life reduction of devices caused by lithium ion diffusion, sets the multilayer ETL, and the multilayer ETL is arranged according to active metal doping concentration with gradient, can adjust the active metal doping concentration of different layers of ETL according to requirements, not only ensures that sufficient current carriers exist, but also can prevent the transverse electric leakage problem caused by too active transverse movement of lithium ions, and has higher device stability.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a CGL of an OLED device provided in the related art;
fig. 2 is a schematic view of a CGL structure of an OLED device according to an embodiment of the present disclosure;
FIG. 3 is a graph illustrating a brightness intensity curve of a display panel according to an embodiment of the disclosure;
FIG. 4 is a detailed view of a brightness intensity curve of a display panel according to an embodiment of the disclosure;
fig. 5 is a schematic view of a CGL structure of an OLED device according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of an OLED device provided in an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
The embodiment of the present disclosure provides an OLED device, a structural schematic of which is shown in fig. 2, and at least includes:
a CGL, wherein the CGL comprises: the ETL comprises a plurality of layers of ETLs and a plurality of insulating layers, wherein the upper layer and the lower layer which are adjacent to each layer of ETL are insulating layers, the ETLs and the insulating layers are sequentially arranged in an overlapping mode, active metals are doped in the ETLs, and the plurality of layers of ETLs are arranged according to the doping concentration of the active metals with gradient.
In particular, the active metal is usually metallic lithium.
In addition to the vertical flow, the current also flows in the transverse direction, which causes leakage, and the embodiment of the present disclosure increases the vertical potential barrier, thereby reducing the transverse flow. In the case of lighting red light, since a lateral leakage occurs, a current flows to the blue light emitting layer of the adjacent pixel through the CGL, resulting in light emission at a blue wavelength; as can be seen from the brightness intensity curves of the display panels shown in fig. 3 and 4 (fig. 4 is an enlarged view of the circled area in fig. 3), there is a significant difference between the intensity of the CGL of the related art in the range of about 480nm and the CGL of the present disclosure, and the electrical leakage of the display panel is significantly improved when the intensity of the corresponding curve of the CGL of the present disclosure is significantly lower than that of the CGL of the related art.
The embodiment of the disclosure sets the insulating layers on the upper layer and the lower layer adjacent to each layer of ETL, fundamentally solves the problem of service life reduction of devices caused by lithium ion diffusion, sets the multilayer ETL, and the multilayer ETL is arranged according to active metal doping concentration with gradient, can adjust the active metal doping concentration of different layers of ETL according to requirements, not only ensures that sufficient current carriers exist, but also can prevent the transverse electric leakage problem caused by too active transverse movement of lithium ions, and has higher device stability.
The CGL shown in fig. 2 consists of two layers of ETLs, which is only an example, and may also have three, four or even more layers of ETLs.
For the two-layer ETL shown in fig. 2, the ETLs may be arranged from high to low according to the active metal doping concentration, for example, the active metal doping concentration of the upper ETL is greater than that of the lower ETL, where the upper ETL is the ETL near one side of the anode layer and the lower ETL is the ETL near one side of the cathode layer, so that the CGL can ensure sufficient carriers and reduce the metal activity relative to the existing single-layer ETL. In a specific implementation, the active metal doping concentration of the upper ETL may be 4%, and the active metal doping concentration of the lower ETL may be 2%.
For another example, for the three-layer ETL shown in fig. 5, the active metal doping concentrations having gradients may be sequentially arranged from the middle to both sides in a decreasing manner, that is, in the three-layer ETL, the active metal doping concentrations of the upper-layer ETL and the lower-layer ETL are less than the active metal doping concentration of the middle-layer ETL, and those skilled in the art may set more gradients according to actual requirements. In a specific implementation, in order to make the ETL near the middle position have a high concentration of lithium doping concentration, the active metal doping concentration of the upper ETL and the lower ETL may be 2%, and the active metal doping concentration of the middle ETL may be 4%.
In a specific setting, it is preferable to set the difference between the doping concentrations of the active metals of any two adjacent ETLs to be the same.
The insulating layer may be formed to have a small thickness, and the thickness of the insulating layer is preferably 10nm or less; the material of the insulating layer may be, for example, silicon oxide (SiO)x) Aluminum oxide (Al)2O3) Molybdenum trioxide (MoO)3) And metal oxides such as zinc oxide (ZnO).
The above-mentioned OLED device has other structures besides the CGL, for example, the schematic view of the OLED device shown in fig. 6, in which the CGL respectively includes other layers above and below, that is, the CGL sequentially includes an HTL (hole transport layer), a Y-EML (yellow emitting layer), an ETL (electron transport layer not doped with Li) and a Cathode (Cathode layer) on the CGL, and the CGL sequentially includes an ETL, a B-EML (blue emitting layer), an HTL and an Anode layer on the lower layer. Of course, the structure shown in fig. 6 is only an example, and does not limit the embodiment of the present disclosure. The blue light emitting layer and the yellow light emitting layer in FIG. 6 are mixed to form white light, the thickness of the single layer of organic material in the middle layer is generally 100-200A, the thickness of the cathode layer is generally 1000A, and the thickness of the whole device is 2000-3000A.
The following is an exemplary description of the processing of the CGL having the three-layer ETL shown in fig. 5 described above, which includes the following processes (1) to (5):
(1) preparing a first insulating layer with Al by using an ALD apparatus2O3The thickness is less than 10 nm.
Of course, it is also possible to produce the first insulating layer by means of a CVD apparatus, the material being correspondingly selected to be SiO2That is, the ALD apparatus may be replaced with a CVD apparatus in the following processes, and the description thereof will be omitted.
(2) Preparing a first ETL on the first insulating layer, wherein the material of the ETL is ETL: li (metallic lithium doped ETL), where the Li concentration is < 2%.
(3) Preparing a second insulating layer with Al by using an ALD apparatus2O3The thickness is less than 10 nm.
(4) Preparing a second ETL on the second insulating layer, wherein the second ETL is prepared from the following materials by using evaporation equipment: li, wherein the Li concentration is < 4%.
(5) Preparing a third insulating layer on the second ETL by using ALD equipment, wherein the material is Al2O3The thickness is less than 10 nm.
Through the above process, the CGL structure shown in fig. 5 can be obtained.
The insulating layer structure in the CGL of the embodiment of the disclosure comprises the inside of the CGL and two sides of the CGL, and the problem of lateral electric leakage of the CGL in high PPI design can be improved by increasing the insulating layer; the insulating layer structures on the two sides of the CGL block Li diffusion, so that the stability is improved; in the CGL, the Li concentration gradient of different partitions is beneficial to improving the effect of the CGL and improving the Li diffusion stability.
The embodiment of the present disclosure further provides a display panel including the OLED device, which is not described herein again.
Moreover, although exemplary embodiments have been described herein, the scope thereof includes any and all embodiments based on the disclosure with equivalent elements, modifications, omissions, combinations (e.g., of various embodiments across), adaptations or alterations. The elements of the claims are to be interpreted broadly based on the language employed in the claims and not limited to examples described in the present specification or during the prosecution of the application, which examples are to be construed as non-exclusive. It is intended, therefore, that the specification and examples be considered as exemplary only, with a true scope and spirit being indicated by the following claims and their full scope of equivalents.
The above description is intended to be illustrative and not restrictive. For example, the above-described examples (or one or more versions thereof) may be used in combination with each other. For example, other embodiments may be used by those of ordinary skill in the art upon reading the above description. In addition, in the foregoing detailed description, various features may be grouped together to streamline the disclosure. This should not be interpreted as an intention that a disclosed feature not claimed is essential to any claim. Rather, the subject matter of the present disclosure may lie in less than all features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the detailed description as examples or embodiments, with each claim standing on its own as a separate embodiment, and it is contemplated that these embodiments may be combined with each other in various combinations or permutations. The scope of the disclosure should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
While the present disclosure has been described in detail with reference to the embodiments, the present disclosure is not limited to the specific embodiments, and those skilled in the art can make various modifications and alterations based on the concept of the present disclosure, and the modifications and alterations should fall within the scope of the present disclosure as claimed.
Claims (10)
1. An OLED device, characterized in that it comprises at least:
a charge generation layer CGL, wherein the CGL comprises: the multilayer ETL comprises a plurality of layers of electron transport layers ETL and a plurality of insulating layers, wherein the upper layer and the lower layer which are adjacent to each layer of ETL are insulating layers, the ETL and the insulating layers are sequentially arranged in an overlapping mode, active metal is doped in the ETL, and the plurality of layers of ETL are arranged according to the doping concentration of the active metal with gradient.
2. The OLED device of claim 1, wherein the insulating layer has a thickness of less than or equal to 10 nm.
3. The OLED device of claim 1, wherein the material of the insulating layer includes at least one of: aluminum oxide, silicon oxide, molybdenum trioxide and zinc oxide.
4. The OLED device of any one of claims 1-3, wherein any two adjacent layers of ETL have the same difference in active metal doping concentration.
5. The OLED device according to any one of claims 1 to 3, wherein the multiple ETLs are arranged in a decreasing order from the middle to both sides according to the active metal doping concentration, or the multiple ETLs are arranged from high to low according to the active metal doping concentration.
6. The OLED device of claim 5, wherein in the three-layer ETL, the active metal doping concentration of the upper and lower layers ETL is less than the active metal doping concentration of the middle layer ETL.
7. The OLED device of claim 6, wherein the active metal doping concentration of the upper ETL and the lower ETL is 2%, and the active metal doping concentration of the middle ETL is 4%.
8. The OLED device of claim 5, wherein in the two-layer ETL, an active metal doping concentration of an upper layer ETL is greater than an active metal doping concentration of a lower layer ETL, wherein the upper layer ETL is the ETL near the anode layer side and the lower layer ETL is the ETL near the cathode layer side.
9. The OLED device of claim 8, wherein the upper ETL has an active metal doping concentration of 4% and the lower ETL has an active metal doping concentration of 2%.
10. A display panel, comprising at least: the OLED device of any one of claims 1-9.
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| CN202111358584.6A CN114068836B (en) | 2021-11-16 | 2021-11-16 | OLED device and display panel |
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| CN104521021A (en) * | 2012-08-10 | 2015-04-15 | 欧司朗Oled股份有限公司 | Encapsulated components comprising an organic layer, and method for the production thereof |
| JP2021087001A (en) * | 2019-11-29 | 2021-06-03 | 株式会社Ｊｏｌｅｄ | Self-luminous element and self-luminous display panel |
| CN113490976A (en) * | 2019-02-26 | 2021-10-08 | 株式会社半导体能源研究所 | Display device, display module, electronic apparatus, and television device |
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2021
- 2021-11-16 CN CN202111358584.6A patent/CN114068836B/en active Active
Patent Citations (7)
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| CN1839493A (en) * | 2003-08-20 | 2006-09-27 | 伊斯曼柯达公司 | White light-emitting device with improved doping |
| US20110315968A1 (en) * | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, Display, and Electronic Device |
| CN104521021A (en) * | 2012-08-10 | 2015-04-15 | 欧司朗Oled股份有限公司 | Encapsulated components comprising an organic layer, and method for the production thereof |
| CN104064677A (en) * | 2013-03-21 | 2014-09-24 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
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