CN114068758B - Boron diffusion treatment control method and device and furnace tube - Google Patents
Boron diffusion treatment control method and device and furnace tube Download PDFInfo
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- CN114068758B CN114068758B CN202010753728.7A CN202010753728A CN114068758B CN 114068758 B CN114068758 B CN 114068758B CN 202010753728 A CN202010753728 A CN 202010753728A CN 114068758 B CN114068758 B CN 114068758B
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- 238000000034 method Methods 0.000 title claims abstract description 56
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 41
- 238000009792 diffusion process Methods 0.000 title claims abstract description 39
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 43
- 230000003647 oxidation Effects 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 230000008021 deposition Effects 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 19
- 238000004590 computer program Methods 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The embodiment of the invention provides a boron diffusion treatment control method and device and a furnace tube, in particular to control the furnace tube to rise from a standby temperature to a deposition temperature; when the temperature of the furnace tube reaches the deposition temperature, carrying out deposition treatment, heating and pushing treatment and high-temperature oxidation treatment on the silicon wafer in the furnace tube; when the furnace tube is controlled to be cooled to the low-temperature oxidation temperature, introducing water vapor with preset pressure and preset steam temperature into the furnace tube by utilizing the bleed air in the process, and continuously presetting the duration; and performing a second cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to the standby temperature. The method solves the problem of low initial doping concentration, namely concentration low head phenomenon in ECV test, by utilizing the difference between water vapor oxidation and conventional dry oxygen, so that the problem of high contact resistance between silicon and metal electrodes is solved, and the P-type doped emitter and the metal electrodes form good ohmic contact, so that the photoelectric conversion efficiency of the silicon cell can be effectively improved.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a boron diffusion treatment control method and device and a furnace tube.
Background
Semiconductor doping technology is an important process step in the field of semiconductor manufacturing, and thermal diffusion is a fundamental method of semiconductor doping technology, and the principle is that molecules are utilized to thermally move in a high-temperature process, so that one substance is dispersed among molecules of another substance. When doping the silicon wafer with the N-type substrate, a conventional boron diffusion method is generally adopted, and the general technical route is as follows: boat feeding, vacuumizing, temperature returning, leakage detection, front oxygen deposition, propulsion, high-temperature high-oxygen oxidation, cooling, and doping of the N-type silicon wafer can be completed through the main steps, so that a required PN junction is obtained.
However, in the post-oxidation process, the high-temperature high-oxygen oxidation of the current technical route can cause the low initial concentration of the doped surface, namely the phenomenon of low head appears in ECV test, so that the contact resistance between the ECV test and the metal electrode is higher, and the photoelectric conversion efficiency of the silicon battery is further affected.
Disclosure of Invention
In view of the above, the invention provides a boron diffusion treatment control method, a boron diffusion treatment control device and a furnace tube, so as to improve the photoelectric conversion efficiency of a finally formed silicon cell.
In order to solve the problems, the invention discloses a boron diffusion treatment control method applied to a furnace tube, comprising the following steps:
Controlling the furnace tube to rise from the standby temperature to the deposition temperature;
when the temperature of the furnace tube reaches the deposition temperature, carrying out deposition treatment, heating and pushing treatment and high-temperature oxidation treatment on the silicon wafer in the furnace tube;
After the high-temperature oxidation treatment is performed, performing a first cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to a low-temperature oxidation temperature, and introducing water vapor with preset pressure and preset steam temperature into the furnace tube by utilizing air entraining in the process of performing the first cooling operation on the furnace tube for a preset duration;
and executing a second cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to the standby temperature.
Optionally, the low-temperature oxidation temperature is 950-850 ℃.
Optionally, the bleed air is oxygen or nitrogen.
Optionally, when the bleed air is nitrogen, the flow rate of the bleed air is 3000sccm and the flow rate of the water vapor is 2000sccm.
Optionally, the preset pressure is 600-900 mbar, and the preset steam temperature is 40-80 ℃.
Optionally, the preset time period is 10-40 min.
Optionally, the standby temperature is 790-850 ℃, and the deposition temperature is 850-900 ℃.
Optionally, the depositing treatment, the heating propulsion treatment and the high-temperature oxidation treatment are performed on the silicon wafer in the furnace tube, and the method comprises the following steps:
Performing a deposition process on the silicon wafer at the deposition temperature;
After the deposition treatment is finished, controlling the temperature in the furnace tube to rise to 990-1050 ℃, and heating and propelling the silicon wafer in the heating process;
Controlling the temperature in the furnace tube to keep 990-1050 ℃, and introducing dry oxygen with the flow of 8L/min-full scale during the period to perform high-temperature oxidation treatment on the silicon wafer.
The invention also provides a boron diffusion treatment control device which is applied to the furnace tube and comprises at least one processor and a memory, wherein:
The memory is used for storing a computer program or instructions;
the processor is configured to execute the computer program or instructions to cause the boron diffusion processing apparatus to execute the boron diffusion process control method as described above.
The furnace tube comprises a tube body, a main air inlet pipe arranged at one end of the tube body, and a boron source air inlet pipe, a nitrogen air inlet pipe, an oxygen air inlet pipe and a water vapor air inlet pipe which are respectively communicated with the main air inlet pipe;
One end of the steam inlet pipe is communicated with the main inlet pipe, and the other end of the steam inlet pipe is communicated with the steam generating device;
The steam generating device comprises a bottle body for containing deionized water;
The bottle body is also provided with a water injection pipe, an air inlet pipe, a piston and an air outlet hole.
According to the technical scheme, the invention provides a boron diffusion treatment control method, a boron diffusion treatment control device and a boron diffusion treatment furnace tube, wherein the boron diffusion treatment control method and the boron diffusion treatment control device are applied to the furnace tube, and particularly control the temperature of the furnace tube to be increased from a standby temperature to a deposition temperature; when the temperature of the furnace tube reaches the deposition temperature, carrying out deposition treatment, heating and pushing treatment and high-temperature oxidation treatment on the silicon wafer in the furnace tube; when the furnace tube is controlled to be cooled to the low-temperature oxidation temperature, introducing water vapor with preset pressure and preset steam temperature into the furnace tube by utilizing the bleed air in the process, and continuously presetting the duration; and performing a second cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to the standby temperature. According to the scheme, the problem that the initial doping concentration is too low due to the fact that boron atoms doped into silicon base rapidly enter borosilicate glass bodies in the high-temperature oxidation process in the doping process is solved by utilizing the difference between the water vapor oxidation and the conventional dry oxygen, namely, the concentration head phenomenon in ECV test is low, so that the problem that the contact resistance between silicon and metal electrodes is high is solved, a P-type doped emitter and the metal electrodes form good ohmic contact, and further the photoelectric conversion efficiency of a silicon battery can be effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a boron diffusion process control method according to an embodiment of the present application;
FIG. 2 is a block diagram of a boron diffusion process control device according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a furnace tube according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Fig. 1 is a flowchart of a boron diffusion process control method according to an embodiment of the present application.
Referring to fig. 1, the boron diffusion treatment method provided in this embodiment is applied to a furnace tube, that is, a special device for performing deposition and oxidation treatment on a silicon wafer, specifically, after the furnace tube is completely put into a boat, the furnace tube is warmed, and the temperature of the furnace tube is stabilized; then carrying out vacuumizing treatment on the furnace tube, thus completing leak detection; a certain amount of oxygen (pre-oxygen) is then introduced, this step being oxidation before deposition, to improve the uniformity of diffusion. After the above process is completed, the following boron diffusion process steps are performed:
s1, controlling the furnace tube to rise from the standby temperature to the deposition temperature.
The standby temperature herein means a temperature at which the furnace tube can perform charging and discharging operations, that is, a temperature at which the silicon wafer is charged into or taken out of the furnace tube, and in the present application, the standby temperature is preferably 790 to 850 ℃. The deposition temperature refers to the temperature at which the silicon wafer is subjected to deposition treatment, and the deposition temperature in the present application is preferably 820 to 900 ℃.
S2, carrying out deposition treatment, heating propulsion treatment and high-temperature oxidation treatment on the silicon wafer in the furnace tube.
When the temperature in the furnace tube reaches the deposition temperature, the silicon wafer in the furnace tube starts to be subjected to deposition treatment, heating and pushing treatment and high-temperature oxidation treatment. The specific process is as follows:
Firstly, introducing a boron source and nitrogen into a furnace tube so as to deposit a silicon wafer in the furnace tube;
then, after the deposition treatment is completed, the furnace tube is subjected to heating operation, so that the temperature in the furnace tube is increased to 950-1000 ℃ to perform heating propulsion treatment on the silicon wafer;
Finally, when the temperature in the furnace reaches 950-1000 ℃, keeping the temperature in the furnace at the temperature, and introducing a dry oxygen flow into the furnace to perform high-temperature oxidation treatment on the silicon wafer. The flow rate of the dry oxygen flow at this time is 8L/min to full scale.
S3, performing water vapor oxidation treatment on the silicon wafer subjected to the high-temperature oxidation treatment.
After high-temperature oxidation is performed on the silicon wafer by using dry oxygen flow, performing a first cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to a low-temperature oxidation temperature, wherein the low-temperature oxidation temperature in the embodiment is preferably 950-850 ℃, and introducing steam into the furnace tube by using air entraining in the first cooling process so as to perform steam oxidation treatment on the surface of the silicon wafer.
The bleed air can be oxygen or nitrogen, and when the bleed air is selected from the nitrogen, the flow rate of the nitrogen is 3000sccm, and the flow rate of the water vapor is 2000sccm. The pressure of the water vapor is 600-900 mbar, the temperature is 40-80 ℃, and the tension of the furnace tube oxidizes the silicon wafer under the state of micro negative pressure. The process of steam lasts for 10-40 min.
S4, performing a second cooling operation on the furnace tube.
After the water vapor oxidation treatment process is completed, stopping introducing water vapor into the furnace tube, and then performing a second cooling operation to reduce the temperature in the furnace tube to the standby temperature so as to discharge.
As can be seen from the above technical solution, the present embodiment provides a boron diffusion treatment control method, which is applied to a furnace tube, specifically, controls the furnace tube to raise the temperature from a standby temperature to a deposition temperature; when the temperature of the furnace tube reaches the deposition temperature, carrying out deposition treatment, heating and pushing treatment and high-temperature oxidation treatment on the silicon wafer in the furnace tube; when the furnace tube is controlled to be cooled to the low-temperature oxidation temperature, introducing water vapor with preset pressure and preset steam temperature into the furnace tube by utilizing the bleed air in the process, and continuously presetting the duration; and performing a second cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to the standby temperature. According to the scheme, the problem that the initial doping concentration is too low due to the fact that boron atoms doped into silicon base rapidly enter borosilicate glass bodies in the high-temperature oxidation process in the doping process is solved by utilizing the difference between the water vapor oxidation and the conventional dry oxygen, namely, the concentration head phenomenon in ECV test is low, so that the problem that the contact resistance between silicon and metal electrodes is high is solved, a P-type doped emitter and the metal electrodes form good ohmic contact, and further the photoelectric conversion efficiency of a silicon battery can be effectively improved.
Example two
FIG. 2 is a block diagram of a boron diffusion process control device according to an embodiment of the present application;
as shown in fig. 2, the boron diffusion processing control device provided in this embodiment is applied to a furnace tube, and at least includes a processor 101 and a memory 102, which are connected by a data bus 103. The memory is used for storing a computer program or instructions, and the processor is used for acquiring and executing the corresponding computer program or instructions so as to enable the boron diffusion process control device to control the furnace tube to realize the boron diffusion process control method provided by the embodiment.
The boron diffusion treatment control method specifically comprises the steps of controlling the furnace tube to rise from the standby temperature to the deposition temperature; when the temperature of the furnace tube reaches the deposition temperature, carrying out deposition treatment, heating and pushing treatment and high-temperature oxidation treatment on the silicon wafer in the furnace tube; when the furnace tube is controlled to be cooled to the low-temperature oxidation temperature, introducing water vapor with preset pressure and preset steam temperature into the furnace tube by utilizing the bleed air in the process, and continuously presetting the duration; and performing a second cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to the standby temperature. According to the scheme, the problem that the initial doping concentration is too low due to the fact that boron atoms doped into silicon base rapidly enter borosilicate glass bodies in the high-temperature oxidation process in the doping process is solved by utilizing the difference between the water vapor oxidation and the conventional dry oxygen, namely, the concentration head phenomenon in ECV test is low, so that the problem that the contact resistance between silicon and metal electrodes is high is solved, a P-type doped emitter and the metal electrodes form good ohmic contact, and therefore the photoelectric conversion efficiency of a silicon battery can be effectively improved.
Example III
FIG. 3 is a schematic view of a furnace according to an embodiment of the present application, wherein the furnace is provided with the boron diffusion control device according to the above embodiment. In order to adapt to the control method of the device, the furnace tube comprises a tube body 10 and a main air inlet tube 20 arranged at one end of the tube body, wherein the main air inlet tube is communicated with a boron source air inlet tube 21, a nitrogen air inlet tube 22 and an oxygen air inlet tube 23 and is also communicated with one end of a water vapor air inlet tube 24.
The furnace tube also comprises a steam generating device 30, the steam generating device comprises a bottle body 31, the bottle body is communicated with the other end of the steam inlet tube, and a water injection tube 32 for injecting deionized water, an air inlet tube 33 for injecting air entraining, a piston 34 and an air outlet hole 35 are arranged on the bottle body.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
It will be apparent to those skilled in the art that embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the invention may take the form of a computer program product on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or terminal device that comprises the element.
The foregoing has outlined rather broadly the more detailed description of the invention in order that the detailed description of the invention that follows may be better understood, and in order that the present principles and embodiments may be better understood; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (7)
1. The boron diffusion treatment control method is applied to the furnace tube and is characterized by comprising the following steps of:
Controlling the furnace tube to rise from the standby temperature to the deposition temperature;
when the temperature of the furnace tube reaches the deposition temperature, carrying out deposition treatment, heating and pushing treatment and high-temperature oxidation treatment on the silicon wafer in the furnace tube;
After the high-temperature oxidation treatment is performed, performing a first cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to a low-temperature oxidation temperature, and introducing water vapor with preset pressure and preset steam temperature into the furnace tube by utilizing air entraining in the process of performing the first cooling operation on the furnace tube for a preset duration; wherein the high-temperature oxidation temperature is 950-1000 ℃, and the low-temperature oxidation temperature is 950-850 ℃; when the bleed air is nitrogen, the preset pressure is 600-900 mbar, and the preset steam temperature is 40-80 ℃;
and executing a second cooling operation on the furnace tube so as to reduce the temperature in the furnace tube to the standby temperature.
2. The boron diffusion process control method according to claim 1, wherein when the bleed air is nitrogen gas, the flow rate of the bleed air is 3000sccm, and the flow rate of the water vapor is 2000sccm.
3. The boron diffusion process control method of claim 1, wherein the predetermined time period is 10 to 40 minutes.
4. The boron diffusion process control method according to any one of claims 1 to 3, wherein the standby temperature is 790 to 850 ℃ and the deposition temperature is 850 to 900 ℃.
5. The boron diffusion process control method of claim 4, wherein said performing a deposition process, a temperature increase advancing process and a high temperature oxidation process on said silicon wafer in said furnace tube comprises the steps of:
Performing a deposition process on the silicon wafer at the deposition temperature;
After the deposition treatment is finished, controlling the temperature in the furnace tube to rise to 950-1000 ℃, and heating and propelling the silicon wafer in the heating process;
And controlling the temperature in the furnace tube to be 950-1000 ℃, and introducing dry oxygen with the flow of 8L/min-full range during the period to perform high-temperature oxidation treatment on the silicon wafer.
6. A boron diffusion process control device for a furnace tube, comprising at least one processor and a memory, wherein:
The memory is used for storing a computer program or instructions;
The processor is configured to execute the computer program or instructions to cause the boron diffusion process control device to execute the boron diffusion process control method according to any one of claims 1 to 5.
7. A furnace tube provided with the boron diffusion treatment control device as defined in claim 6, wherein the furnace tube at least comprises a tube body and a main air inlet tube arranged at one end of the tube body, and further comprises a boron source air inlet tube, a nitrogen air inlet tube, an oxygen air inlet tube and a water vapor air inlet tube which are respectively communicated with the main air inlet tube;
One end of the steam inlet pipe is communicated with the main inlet pipe, and the other end of the steam inlet pipe is communicated with the steam generating device;
The steam generating device comprises a bottle body for containing deionized water;
The bottle body is also provided with a water injection pipe, an air inlet pipe, a piston and an air outlet hole.
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