CN114062384A - Method and device for detecting mask plate defects - Google Patents
Method and device for detecting mask plate defects Download PDFInfo
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- CN114062384A CN114062384A CN202111256712.6A CN202111256712A CN114062384A CN 114062384 A CN114062384 A CN 114062384A CN 202111256712 A CN202111256712 A CN 202111256712A CN 114062384 A CN114062384 A CN 114062384A
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- 230000007547 defect Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005286 illumination Methods 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000004422 calculation algorithm Methods 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 230000010287 polarization Effects 0.000 claims abstract description 9
- 210000001747 pupil Anatomy 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 210000001550 testis Anatomy 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 7
- 238000004088 simulation Methods 0.000 description 10
- 238000005094 computer simulation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000010200 validation analysis Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 101100008046 Caenorhabditis elegans cut-2 gene Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
Abstract
The invention discloses a method and a device for detecting mask defects. The method comprises the following specific steps: (1) two orthogonal polarization states of transverse electric wave TE and transverse magnetic wave TM are measured once by using a mask plate aerial image measuring device to obtain two sets
Respectively corresponding to complex amplitudes of the mask surface under TE and TM illumination; (2) and obtaining the light intensity distribution on the silicon wafer through a space image simulation algorithm, and judging the defects of the mask plate according to the symmetrical condition of the light intensity distribution and the difference of the line width. The invention adopts mature interferometer technology to accurately measure the amplitude and phase position of the defect generated at the pupil, and then simulates and synthesizes images on a silicon chip through mature space images so as to quantitatively determine the influence of the defect on the photoetching process without compensation.
Description
Technical Field
The invention belongs to the field of integrated circuit manufacturing, and particularly relates to a method and a device for detecting mask defects.
Background
The mask plate manufacture enters deep submicron line width, and the influence of defects in the mask plate manufacture process on photoetching imaging is larger and larger. With the increasing numerical aperture of lithography, especially 1.35 immersion lithography, the effect of polarized illumination cannot be ignored, the existing far-field imaging defect detection mode (called Aerial Image Measurement System, AIMS) is difficult to reproduce the situation of large numerical aperture, the detection of the mask defects and the actual exposure result of the silicon wafer can generate a large difference in principle, and only subsequent compensation can be relied on. The compensation can also be different along with different photoetching processes of user chips, different photoetching levels and different design and structure of photoetching machines, so that the calibration is needed, the time of users is occupied, the product research and development of the users are delayed, and the production management cost and the complexity of the users are increased.
Disclosure of Invention
The invention aims to provide a novel method and a novel device for detecting mask defects. The invention adopts the interference principle to measure the amplitude and the phase position of the mask plate defect generated at the pupil, and then synthesizes the image on the silicon chip by the simulation of the mature silicon chip space image, namely, the defects of the prior method are solved by adopting the mode of combining the optical interference detection and the optical simulation calculation. The technical scheme of the invention is specifically introduced as follows.
The invention discloses a method for detecting mask defects, which comprises the following specific steps:
(1) measuring the amplitude and the phase generated by the upper surface of the mask to be measured at the pupil based on the mask aerial image measuring device by utilizing the interference technology; wherein:
the mask plate aerial image measuring device comprises a laser, a polarizing film, a first beam splitting plate, a second beam splitting plate, a first diaphragm, a second diaphragm, a first reflector, a second reflector, a reference surface, an amplification objective lens and an array sensor; the first beam splitting plate and the second beam splitting plate are respectively a semi-transparent semi-reflecting plane lens, a first diaphragm is arranged between the first beam splitting plate and the first reflector, a second diaphragm is arranged between the first beam splitting plate and the second reflector, a reference surface is arranged between the first reflector and the second beam splitting plate, and a mask to be tested is arranged between the second reflector and the second beam splitting plate; when the device works, plane waves emitted by a laser are changed into polarized light through a polarizing film, the polarized light is divided into two beams by a first beam splitting plate, one beam is a reference beam, the other beam is an illumination beam, the reference beam is incident on a first reflector through a first diaphragm, is reflected by the first reflector and then irradiates on a reference surface, and further enters a second beam splitting plate, the illumination beam is incident on a second reflector through a second diaphragm, parallel light formed after reflection by the second reflector irradiates on a region to be detected of a mask to be detected, and then is incident on the second beam splitting plate, the light beams separated by the second beam splitting plate and the reference beam separated by the second beam splitting plate are combined with an amplifying objective lens, and the reference surface and the upper surface of the mask to be detected are shot to an array sensor through the amplifying objective lens;
the light intensity of the reference surface when the first diaphragm is opened and the second diaphragm is closed is recorded by the array sensor in a test mode and is I1(x, y) the amplitude of the light intensity of the reference surface is A1(x, y) of I1(x, y) the light intensity value of each pixel is obtained by root; the light intensity of the upper surface of the mask to be tested when the first diaphragm is closed and the second diaphragm is opened is I recorded in the test of the array sensor2(x, y), the light intensity amplitude of the upper surface of the mask to be detected is A2(x, y) of I2(x, y) the light intensity value of each pixel is obtained by root; the light intensity after the interference of the reference surface and the upper surface of the mask to be tested when the first diaphragm and the second diaphragm are simultaneously opened is I (x, y) recorded by the array sensor test, and then the phase distribution phi (x, y) of the upper surface of the mask to be tested is calculated by a formula 1):
I(x，y)＝|A1(x，y)exp(-iωt)+A2(x，y)exp(iφ(x，y)-iωt)|2
＝I1(x，y)+I2(x，y)+2A1(x，y)A2(x，y)cos(φ(x，y)) 1)
two mutually perpendicular polarization states of transverse electric wave TE and transverse magnetic wave TM are measured once by utilizing a mask plate aerial image measuring device to obtain two different sets of [ A ]2(x,y),φ(x,y)]Respectively corresponding to complex amplitudes of the upper surface of the mask to be tested under TE and TM illumination;
(2) and acquiring light intensity distribution on the silicon wafer by an aerial image simulation algorithm based on the complex amplitude of the upper surface of the mask to be detected under corresponding TE and TM illumination, and judging the defects of the mask according to the symmetrical condition of the light intensity distribution and the difference of the line width.
In the present invention, in the step (1), the reflectance of the first beam splitter plate and the reflectance of the second beam splitter plate are 50%.
In the invention, in the step (1), the reference beam is a transmitted beam, and the illumination beam is a reflected beam.
In the invention, in the step (1), the reference beam is a reflected beam, and the illumination beam is a transmitted beam.
The invention also discloses a device for the detection method, which is a mask plate aerial image measuring device and comprises a laser, a polarizing film, a first beam splitting plate, a second beam splitting plate, a first diaphragm, a second diaphragm, a first reflector, a second reflector, a reference surface, an amplification objective lens and an array sensor; the first beam splitting plate and the second beam splitting plate are respectively a semi-transparent semi-reflecting plane lens, a first diaphragm is arranged between the first beam splitting plate and the first reflector, a second diaphragm is arranged between the first beam splitting plate and the second reflector, a reference surface is arranged between the first reflector and the second beam splitting plate, and a mask to be tested is arranged between the second reflector and the second beam splitting plate; when the device works, a plane wave emitted by a laser device is changed into polarized light after passing through a polarizing film, the polarized light is divided into two beams by a first beam splitting plate, one beam is a reference beam, the other beam is an illumination beam, the reference beam is incident on a first reflector through a first diaphragm, is irradiated on a reference surface after being reflected by the first reflector, and then is incident on a second beam splitting plate, the illumination beam is incident on a second reflector through a second diaphragm, a to-be-detected area of a to-be-detected mask is irradiated by parallel light formed after being reflected by the second reflector, and then is incident on the second beam splitting plate, the light beams separated by the second beam splitting plate and the reference beam are combined and amplified and are irradiated to an objective lens, and the reference surface and the upper surface of the mask are imaged on an array sensor by the amplified objective lens.
Compared with the prior art, the invention has the beneficial effects that:
1) the invention adopts mature interferometer technology to accurately measure the amplitude and phase position of the defect generated at the pupil, and then simulates and synthesizes images on a silicon chip through mature space images so as to quantitatively determine the influence of the defect on the photoetching process without compensation. 2) The space image simulation algorithm exists for more than ten years, and can include the aberration of a lens of a photoetching machine, a photochemical reaction model of photoresist, and the difference with the actual silicon wafer exposure result can be made very small. Compared with the existing AIMS which can only perform optical imaging, the method can eliminate the difference between the existing AIMS equipment and the actual silicon wafer exposure in principle.
Drawings
FIG. 1: schematic overall structural view (side view) of one implementation of the present invention.
FIG. 2: the computer simulation verification result of the algorithm of the invention is as follows: the TE polarization.
FIG. 3: the computer simulation verification result of the algorithm of the invention is as follows: the TM polarization.
FIG. 4: the simulation results of the image on the silicon chip of the algorithm of the invention are as follows: and no defect.
FIG. 5: computer simulation validation results (with defects) for the algorithm of the invention: the TE polarization.
FIG. 6: computer simulation validation results (with defects) for the algorithm of the invention: the TM polarization.
FIG. 7: the simulation results of the image on the silicon chip of the algorithm of the invention are as follows: there are square defects of size 20 nm.
The device comprises a 1-laser, a 2-first beam splitting plate, a 3-first diaphragm, a 4-second diaphragm, a 5-first reflector, a 6-second reflector, a 7-reference surface, an 8-mask to be detected, a 9-second beam splitting plate, a 10-magnifying objective and an 11-array sensor.
Detailed Description
Fig. 1 is a schematic overall structure diagram of one implementation of the present invention. The plane wave emitted by the laser 1 passes through the polarizer and then becomes polarized light, i.e., transverse electric wave (TE wave) and transverse magnetic wave (TM wave) which are perpendicular to each other, and the polarized light is divided into two beams by the first beam splitter 2, one beam is a reference beam AC and the other beam is an illumination beam AB. AC is directed to the second beam splitting plate 9 via the first reflecting mirror 5 and is transmitted to form a light beam DO, AB is reflected by the second reflecting mirror 6 to form parallel light BD, and is irradiatedPart of the mask 8 to be detected is reflected by the second beam splitter plate 9 after passing through the mask 8 to be detected and combined with the reference beam into DO, and the DO is emitted to the magnifying objective lens 10, and the magnifying objective lens 10 images the reference surface 7 and the upper surface of the mask on the array sensor 11. Wherein the optical path length ErefD＝ED，OG＝10～100*ErefO, namely the multiplying power of the magnifying objective lens 10 is 10-100 times, and the 140nm size image on the mask to be measured is magnified to 1.4-14 mu m (micrometer). This size corresponds to the pixel size of the array sensor 11. The optical path AB + BD is AC + CD.
The first beam splitter plate 2 and the second beam splitter plate 9 are half mirror plates, and preferably have a reflectivity of 50%. The first diaphragm 3 and the second diaphragm 4 can independently control the on-off of the light paths AC and AB respectively. When the first diaphragm 3 is opened and the second diaphragm 4 is closed, the array sensor 11 registers the light intensity I of the reference surface 71(x, y) otherwise, i.e. the second diaphragm 4 is opened, the first diaphragm 3 is closed, the array sensor 11 records the light intensity I of the upper surface of the mask2(x, y), when the first diaphragm 3 and the second diaphragm 4 are opened simultaneously, the array sensor 11 records the light intensity I (x, y) after the reference surface 7 interferes with the upper surface of the mask. The measured light intensity I1(x, y) and intensity of light I2(x, y) the light intensity value of each pixel is root-signed, and the amplitude A can be obtained1(x, y) and amplitude A2(x, y). According to formula 1)
I(x，y)＝|A1(x，y)exp(-iωt)+A2(x，y)exp(iφ(x，y)-iωt)|2
＝I1(x，y)+I2(x，y)+2A1(x，y)A2(x，y)cos(φ(x，y)) 1)
Phi (x, y), the phase distribution of the parallel light BD formed on the reticle upper surface by the reticle, can be solved.
The operation can be used for measuring two polarization states of Transverse Electric waves (TE) and Transverse Magnetic waves (TM) which are perpendicular to each other once, and two different sets of [ A ] can be obtained2(x,y),φ(x,y)]Corresponding to the complex amplitudes of the mask surface under TE and TM illumination, respectively. With the two sets of parameters, IThe light intensity distribution on the silicon chip can be obtained through a space image simulation algorithm.
FIG. 2 shows the simulated calculation of the amplitude and phase distribution of a mask (without defects) under TE illumination, and the interference with a reference beam, using equation (1), by the light intensity I (x, y), I1(x,y)，I2(x, y) and light amplitude A1(x,y)，A2(x, y) the phase phi (x, y) is calculated and compared with the phase of the initial simulation, and the error is found to be only 10-15And the accuracy is very high.
FIG. 3 shows the simulation of the light amplitude and phase distribution of a mask (without defects) under TM illumination, and then the interference with a reference beam is performed by using the formula (1) and the light intensity I (x, y), I1(x,y)，I2(x, y) and light amplitude A1(x,y)，A2(x, y) the phase phi (x, y) is calculated and compared with the phase of the initial simulation, and the error is found to be only 10-15And the accuracy is very high.
Fig. 4 shows the spatial image profile and the light intensity distribution (without defects) under certain conditions, wherein the spatial image simulation algorithm is described in [ lithography process near diffraction limit, university of qinghua press, 2 months 2020, chapter 11, section 11.4, section 11.5 ]. It can be seen that the line width at 5 line ends is 69nm + -0.1 nm, and the light intensity distribution of the aerial image is symmetrical without defects.
FIG. 5 shows the light amplitude and phase distribution of a mask (with 20nm square defects) under TE illumination calculated by simulation, and then interfered with a reference beam by the light intensity I (x, y), I (1)1(x,y)，I2(x, y) and light amplitude A1(x,y)，A2(x, y) the phase phi (x, y) is calculated and compared with the phase of the initial simulation, and the error is found to be only 10-15And the accuracy is very high.
FIG. 6 shows the light amplitude and phase distribution of a mask (with 20nm square defects) under TM illumination calculated by simulation, and then interfered with a reference beam by light intensity I (x, y), I (1)1(x,y)，I2(x, y) and light amplitude A1(x,y)，A2(x, y) the phase phi (x, y) is calculated and compared with the phase of the initial simulation, and the error is found to be only 10-15And the accuracy is very high.
FIG. 7 calculates the aerial image profile and light intensity distribution (20 nm square defect) under certain conditions. The spatial image simulation algorithm adopted in the method is described in [ lithography process near diffraction limit ], university of Qinghua press, 2 months 2020, Chapter 11, sections 11.4 and 11.5 ]. The line width (tangent-2, Cut-2) of the line end at the visible defect position is 66.38nm, which is obviously less than the adjacent line width by about 3nm, and the light intensity distribution of the space image is in a left-right asymmetric state. The user can decide whether the defect is acceptable or not according to the line width difference.
Claims (5)
1. A method for detecting mask defects is characterized by comprising the following specific steps:
(1) measuring the amplitude and the phase generated by the upper surface of the mask to be measured at the pupil based on the mask aerial image measuring device by utilizing the interference technology; wherein:
the mask plate aerial image measuring device comprises a laser, a polarizing film, a first beam splitting plate, a second beam splitting plate, a first diaphragm, a second diaphragm, a first reflector, a second reflector, a reference surface, an amplification objective lens and an array sensor; the first beam splitting plate and the second beam splitting plate are respectively a semi-transparent semi-reflecting plane lens, a first diaphragm is arranged between the first beam splitting plate and the first reflector, a second diaphragm is arranged between the first beam splitting plate and the second reflector, a reference surface is arranged between the first reflector and the second beam splitting plate, and a mask to be tested is arranged between the second reflector and the second beam splitting plate; when the device works, plane waves emitted by a laser are changed into polarized light through a polarizing film, the polarized light is divided into two beams by a first beam splitting plate, one beam is a reference beam, the other beam is an illumination beam, the reference beam is incident on a first reflector through a first diaphragm, is reflected by the first reflector and then irradiates on a reference surface, and further enters a second beam splitting plate, the illumination beam is incident on a second reflector through a second diaphragm, parallel light formed after reflection by the second reflector irradiates on a region to be detected of a mask to be detected, and then is incident on the second beam splitting plate, the light beams separated by the second beam splitting plate and the reference beam separated by the second beam splitting plate are combined with an amplifying objective lens, and the reference surface and the upper surface of the mask to be detected are shot to an array sensor through the amplifying objective lens;
the light intensity of the reference surface when the first diaphragm is opened and the second diaphragm is closed is recorded by the array sensor test asI 1（x,y) Reference surface light intensity amplitude ofA 1（x,y) Which is composed ofI 1（x,y) The light intensity value of each pixel is obtained by root; the light intensity of the upper surface of the mask to be tested when the first diaphragm is closed and the second diaphragm is opened is recorded by the array sensor testI 2（x,y) The light intensity amplitude of the upper surface of the mask to be measured isA 2（x,y) Which is composed ofI 2（x,y) The light intensity value of each pixel is obtained by root; the light intensity recorded by the array sensor after the interference of the reference surface when the first diaphragm and the second diaphragm are simultaneously opened and the upper surface of the mask to be tested isI（x,y) The phase distribution of the upper surface of the mask to be measured
Calculated by equation 1):
Two mutually perpendicular polarization states of transverse electric wave TE and transverse magnetic wave TM are measured once by utilizing a mask plate space image measuring device to obtain two sets of different polarization statesA 2（x,y）,
]Respectively corresponding to complex amplitudes of the upper surface of the mask to be tested under TE and TM illumination;
(2) and acquiring light intensity distribution on the silicon wafer by an aerial image simulation algorithm based on the complex amplitude of the upper surface of the mask to be detected under corresponding TE and TM illumination, and judging the defects of the mask according to the symmetrical condition of the light intensity distribution and the difference of the line width.
2. The method of claim 1, wherein in step (1), the reflectance of the first beam splitter plate and the reflectance of the second beam splitter plate are 50%.
3. The method of claim 1, wherein in step (1), the reference beam is a transmitted beam and the illumination beam is a reflected beam.
4. The method of claim 1, wherein in step (1), the reference beam is a reflected beam and the illumination beam is a transmitted beam.
5. An apparatus for use in the method of claim 1, characterized in that it is a reticle aerial image measuring apparatus comprising a laser, a polarizer, a first beam splitter plate, a second beam splitter plate, a first diaphragm, a second diaphragm, a first mirror, a second mirror, a reference surface, a magnifying objective and an array sensor; the first beam splitting plate and the second beam splitting plate are respectively a semi-transparent semi-reflecting plane lens, a first diaphragm is arranged between the first beam splitting plate and the first reflector, a second diaphragm is arranged between the first beam splitting plate and the second reflector, a reference surface is arranged between the first reflector and the second beam splitting plate, and a mask to be tested is arranged between the second reflector and the second beam splitting plate; when the device works, a plane wave emitted by a laser device is changed into polarized light after passing through a polarizing film, the polarized light is divided into two beams by a first beam splitting plate, one beam is a reference beam, the other beam is an illumination beam, the reference beam is incident on a first reflector through a first diaphragm, is irradiated on a reference surface after being reflected by the first reflector, and is further incident on a second beam splitting plate, the illumination beam is incident on a second reflector through a second diaphragm, a to-be-detected area of a to-be-detected mask plate is irradiated on the second beam splitting plate after parallel light formed after being reflected by the second reflector, the light beams separated by the second beam splitting plate and the reference beam are combined and amplified and are irradiated to an objective lens, and the reference surface and the upper surface of the to-be-detected mask plate are imaged on an array sensor by the amplifying objective lens.
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| JPH06174550A (en) * | 1992-12-08 | 1994-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for optical measurement |
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2021
- 2021-10-27 CN CN202111256712.6A patent/CN114062384A/en active Pending
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| JPH06174550A (en) * | 1992-12-08 | 1994-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for optical measurement |
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