CN114050055B

CN114050055B - Charge pump packaging system and charge pump voltage conversion module

Info

Publication number: CN114050055B
Application number: CN202111282508.1A
Authority: CN
Inventors: 刘锐; 杨松楠
Original assignee: Guangdong Xidi Microelectronics Co ltd
Current assignee: Xidi Microelectronics Group Co ltd
Priority date: 2021-11-01
Filing date: 2021-11-01
Publication date: 2023-03-28
Anticipated expiration: 2041-11-01
Also published as: CN114050055A

Abstract

The embodiment of the invention provides a charge pump packaging system and a charge pump voltage conversion module, comprising: the packaging system comprises a first substrate, a charge pump chip and at least one energy storage unit, wherein the first surface of the charge pump chip is attached to the first surface of the first substrate, the charge pump chip is electrically connected with the first substrate through the first surface, the second surface of the first substrate is provided with at least one A bonding pad and at least one B bonding pad, the first end of each energy storage unit is fixed on the first substrate through the corresponding A bonding pad, the second end of each energy storage unit is fixed on the first substrate through the corresponding B bonding pad, the charge pump chip is respectively connected with the A bonding pads and the B bonding pads through via holes of the first substrate, so that the charge pump chip is electrically connected with the energy storage units, and the packaging system can reduce the distance between the chip and the energy storage units by respectively arranging the charge pump chip and the energy storage units on two surfaces of the first substrate, namely reduce the wiring distance, thereby reduce equivalent series resistance and equivalent series inductance and improve the working efficiency of the chip.

Description

Charge pump packaging system and charge pump voltage conversion module

Technical Field

The embodiment of the invention relates to the technical field of electronics, in particular to a charge pump packaging system and a charge pump voltage conversion module.

Background

In a packaging system of a charge pump chip, the prior art commonly used in the industry is to arrange flying capacitors side by side around the charge pump chip in a manner that a plurality of capacitors are connected in parallel, wherein the charge pump chip and the flying capacitors are arranged on the same surface of the same circuit substrate. However, the planar capacitor placement also makes the PCB wiring from the capacitor to the chip pins longer, which brings extra equivalent series resistance and equivalent series inductance to the circuit and affects the chip working efficiency.

Disclosure of Invention

The embodiment of the invention aims to provide a charge pump packaging system and a charge pump voltage conversion module, wherein the connection distance from an energy storage unit to a charge pump chip is shorter, so that the equivalent series resistance and the equivalent series inductance are smaller, and the working efficiency of the chip is high.

In a first aspect, one technical solution adopted by the embodiments of the present invention is: there is provided a charge pump packaging system comprising: the device comprises a first substrate, a charge pump chip and at least one energy storage unit; the first substrate is provided with a first surface and a second surface, the first surface of the charge pump chip is attached to the first surface of the first substrate, the charge pump chip is electrically connected with the first substrate through the first surface of the charge pump chip, the second surface of the first substrate is provided with at least one A bonding pad and at least one B bonding pad, the number of the A bonding pads, the number of the B bonding pads and the number of the energy storage units are respectively equal, the first end of each energy storage unit is fixed on the first substrate through the corresponding A bonding pad, the second end of each energy storage unit is fixed on the first substrate through the corresponding B bonding pad, a through hole is formed in the first substrate, and the charge pump chip is connected with each A bonding pad and each B bonding pad through the through hole of the first substrate so that the charge pump chip is electrically connected with each energy storage unit.

In some embodiments, the charge pump chip has at least one connection unit, the connection unit has a first connection end and a second connection end, and the number of the connection units is equal to the number of the energy storage units; each A bonding pad is provided with a first connecting point, each B bonding pad is provided with a second connecting point, each first connecting end is correspondingly connected with the first connecting point of each A bonding pad, each second connecting end is correspondingly connected with the second connecting point of each B bonding pad, the first connecting point of each A bonding pad is positioned in the center of the first end of each energy storage unit, and the second connecting point of each B bonding pad is positioned in the center of the second end of each energy storage unit; or each of the a pads has at least two first connection points, each of the B pads has at least two second connection points, each of the first connection ends is correspondingly connected to each of the first connection points of each of the a pads, each of the second connection ends is correspondingly connected to each of the second connection points of each of the B pads, geometric centers of the at least two first connection points of each of the a pads are located at the center of the first end of each of the energy storage units, and geometric centers of the at least two second connection points of each of the B pads are located at the center of the second end of each of the energy storage units.

In some embodiments, the energy storage unit comprises an inverse geometric capacitance, or the energy storage unit comprises at least two capacitances arranged in parallel and connected in parallel.

In some embodiments, the inverse geometric capacitance and the capacitance are both multilayer ceramic patch capacitances.

In some embodiments, the charge pump packaging system comprises at least two energy storage units, and the energy storage units are arranged in parallel.

In some embodiments, the charge pump chip is a dual-phase charge pump chip having a first connection unit and a second connection unit, the charge pump packaging system includes a first energy storage unit, a second energy storage unit, a first a pad, a second a pad, a first B pad, and a second B pad; the first end of the first energy storage unit is fixed on the first substrate through the first A bonding pad, the second end of the first energy storage unit is fixed on the first substrate through the first B bonding pad, the first end of the second energy storage unit is fixed on the first substrate through the second A bonding pad, and the second end of the second energy storage unit is fixed on the first substrate through the second B bonding pad; the first A bonding pad and the second A bonding pad are respectively provided with a first connecting point, the first B bonding pad and the second B bonding pad are respectively provided with a second connecting point, the first connecting end of the first connecting unit is connected with the first connecting point of the first A bonding pad, the second connecting end of the first connecting unit is connected with the second connecting point of the first B bonding pad, the first connecting end of the second connecting unit is connected with the first connecting point of the second A bonding pad, the second connecting end of the second connecting unit is connected with the second connecting point of the second B bonding pad, the first connecting point of the first A bonding pad is located at the center of the first end of the first energy storage unit, the second connecting point of the first B bonding pad is located at the center of the second end of the first energy storage unit, the first connecting point of the second A bonding pad is located at the center of the first end of the second energy storage unit, and the second connecting point of the second B bonding pad is located at the center of the second end of the second energy storage unit; or the first a pad and the second a pad both have at least two first connection points, the first B pad and the second B pad both have at least two second connection points, the first connection end of the first connection unit is connected to each first connection point of the first a pad, the second connection end of the first connection unit is connected to each second connection point of the first B pad, the first connection end of the second connection unit is connected to each first connection point of the second a pad, the second connection end of the second connection unit is connected to each second connection point of the second B pad, the geometric centers of the at least two first connection points of the first a pad are located at the center of the first end of the first energy storage unit, the geometric centers of the at least two second connection points of the first B pad are located at the center of the second end of the first energy storage unit, the geometric centers of the at least two first connection points of the second a pad are located at the center of the first end of the second energy storage unit, and the geometric centers of the at least two second connection points of the second B pad are located at the center of the second end of the second energy storage unit.

In some embodiments, the first energy storage unit comprises a first inverse geometric capacitance and the second energy storage unit comprises a second inverse geometric capacitance; a first end of the first inverse geometric capacitor is fixed on the first substrate through the first A bonding pad, a second end of the first inverse geometric capacitor is fixed on the first substrate through the first B bonding pad, a first end of the second inverse geometric capacitor is fixed on the first substrate through the second A bonding pad, and a second end of the second inverse geometric capacitor is fixed on the first substrate through the second B bonding pad; the first A bonding pad and the second A bonding pad are respectively provided with a first connecting point, the first B bonding pad and the second B bonding pad are respectively provided with a second connecting point, the first connecting point of the first A bonding pad is positioned at the center of the first end of the first inverse geometric capacitor, the second connecting point of the first B bonding pad is positioned at the center of the second end of the first inverse geometric capacitor, the first connecting point of the second A bonding pad is positioned at the center of the first end of the second inverse geometric capacitor, and the second connecting point of the second B bonding pad is positioned at the center of the second end of the second inverse geometric capacitor; or, the first a pad and the second a pad both have at least two first connection points, the first B pad and the second B pad both have at least two second connection points, the geometric centers of the at least two first connection points of the first a pad are located at the first end center position of the first inverse geometric capacitance, the geometric centers of the at least two second connection points of the first B pad are located at the second end center position of the first inverse geometric capacitance, the geometric centers of the at least two first connection points of the second a pad are located at the first end center position of the second inverse geometric capacitance, and the geometric centers of the at least two second connection points of the second B pad are located at the second end center position of the second inverse geometric capacitance.

In some embodiments, the first energy storage unit comprises a first capacitor and a second capacitor connected in parallel, and the second energy storage unit comprises a third capacitor and a fourth capacitor connected in parallel;

the first end of the first capacitor and the first end of the second capacitor are fixed on the first substrate through the first A bonding pad, the second end of the first capacitor and the second end of the second capacitor are fixed on the first substrate through the first B bonding pad, the first end of the third capacitor and the first end of the fourth capacitor are fixed on the first substrate through the second A bonding pad, and the second end of the third capacitor and the second end of the fourth capacitor are fixed on the first substrate through the second B bonding pad; the first A bonding pad and the second A bonding pad are respectively provided with a first connecting point, the first B bonding pad and the second B bonding pad are respectively provided with a second connecting point, the first connecting point of the first A bonding pad is positioned at the midpoint of a connecting line of the first end of the first capacitor and the first end of the second capacitor, the second connecting point of the first B bonding pad is positioned at the midpoint of a connecting line of the second end of the first capacitor and the second end of the second capacitor, the first connecting point of the second A bonding pad is positioned at the midpoint of a connecting line of the first end of the third capacitor and the first end of the fourth capacitor, and the second connecting point of the second B bonding pad is positioned at the midpoint of a connecting line of the second end of the third capacitor and the second end of the fourth capacitor; or, the first a pad and the second a pad both have at least two first connection points, the first B pad and the second B pad both have at least two second connection points, the geometric centers of the at least two first connection points of the first a pad are located at the positions of the connection midpoints of the first ends of the first capacitors and the first ends of the second capacitors, the geometric centers of the at least two second connection points of the first B pad are located at the positions of the connection midpoints of the second ends of the first capacitors and the second capacitors, the geometric centers of the at least two first connection points of the second a pad are located at the positions of the connection midpoints of the first ends of the third capacitors and the first ends of the fourth capacitors, and the geometric centers of the at least two second connection points of the second B pad are located at the positions of the connection midpoints of the second ends of the third capacitors and the second ends of the fourth capacitors.

In some embodiments, the charge pump packaging system further comprises a second substrate and an interposer layer; through holes are formed in the second substrate and the switching layer, and at least one D-shaped bonding pad is arranged on the first surface of the second substrate; the transfer layer is arranged around the charge pump chip, the transfer layer is located between the first substrate and the second substrate, and the charge pump chip is connected with the D bonding pads through the via holes of the first substrate, the via holes of the transfer layer and the via holes of the second substrate.

In some embodiments, the charge pump package system further comprises a thermally conductive layer; the first surface of the second substrate is also provided with at least one C pad, the first surface of the heat conduction layer is arranged on the second surface of the charge pump chip, the second surface of the heat conduction layer is arranged on the second surface of the second substrate, and the heat conduction layer is thermally connected with the C pad through the via hole of the second substrate.

In some embodiments, the first substrate is a printed circuit board, an RDL layer, and/or a low temperature co-fired ceramic layer; the second substrate is a printed circuit board, an RDL layer and/or a low-temperature co-fired ceramic layer; the switching layer is a printed circuit board, an RDL layer and/or a low-temperature co-fired ceramic layer.

In a second aspect, an embodiment of the present invention further provides a charge pump voltage conversion module, including the charge pump package system according to any one of the first aspect.

Compared with the prior art, the invention has the beneficial effects that: in contrast to the prior art, an embodiment of the present invention provides a charge pump package system and a charge pump voltage conversion module, including: the packaging system comprises a first substrate, a charge pump chip and at least one energy storage unit, wherein the first surface of the charge pump chip is attached to the first surface of the first substrate, the charge pump chip is electrically connected with the first substrate through the first surface, the second surface of the first substrate is provided with at least one A bonding pad and at least one B bonding pad, the first end of each energy storage unit is fixed on the first substrate through the corresponding A bonding pad, the second end of each energy storage unit is fixed on the first substrate through the corresponding B bonding pad, the charge pump chip is respectively connected with the A bonding pads and the B bonding pads through via holes of the first substrate, so that the charge pump chip is electrically connected with the energy storage units, and the packaging system can reduce the distance between the charge pump chip and the energy storage units by respectively arranging the charge pump chip and the energy storage units on the two surfaces of the first substrate, namely reduce the connection distance, thereby reduce equivalent series resistance and equivalent series inductance and improve the working efficiency of the charge pump chip.

Drawings

One or more embodiments are illustrated by the accompanying figures in the drawings that correspond thereto and are not to be construed as limiting the embodiments, wherein elements/modules and steps having the same reference numerals are represented by like elements/modules and steps, unless otherwise specified, and the drawings are not to scale.

Fig. 1 is a conversion circuit of a two-phase buck charge pump according to an embodiment of the present invention;

FIG. 2 is a schematic voltage or current waveform diagram of each node of FIG. 1;

FIG. 3 is a schematic diagram of current waveforms of the energy storage unit corresponding to different capacitance values of the energy storage unit;

fig. 4 is a schematic diagram of a charge pump package system provided in the prior art;

FIG. 5 is a diagram showing the relationship between the equivalent series resistance of the loop of the energy storage unit in different charge pump packaging systems and the switching frequency of the switching tube;

FIG. 6 is a diagram showing the relationship between the current between two capacitors connected in parallel in the same energy storage unit in different charge pump packaging systems and the switching frequency of a switching tube;

fig. 7 is a side view of a charge pump package system according to an embodiment of the invention;

fig. 8 is a bottom perspective view of a charge pump package system according to an embodiment of the present invention;

FIG. 9 is a schematic current flow diagram of the energy storage unit of FIG. 7;

fig. 10 is a top view of a charge pump package system according to an embodiment of the present invention;

fig. 11 is a top view of yet another charge pump package system provided by an embodiment of the present invention;

fig. 12 is a top view of yet another charge pump package system provided by an embodiment of the invention;

fig. 13 is a front perspective view of a charge pump package system provided by an embodiment of the present invention;

fig. 14 is a top view of another charge pump package system provided by an embodiment of the present invention;

fig. 15 is a front perspective view of another charge pump package system provided by an embodiment of the present invention;

fig. 16 is a top view of a fifth charge pump package system according to an embodiment of the present invention;

fig. 17 is a top view of a sixth charge pump packaging system in accordance with an embodiment of the present invention;

FIG. 18 is a schematic current flow diagram of the energy storage cell of FIG. 15;

fig. 19 is a side view of another charge pump package system according to an embodiment of the invention;

fig. 20 is a schematic side view of another charge pump package system according to an embodiment of the invention.

Detailed Description

The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the concept of the invention. All falling within the scope of the invention.

In order to facilitate an understanding of the present application, the present application is described in more detail below with reference to the accompanying drawings and specific embodiments. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

It should be noted that, if not conflicted, the various features of the embodiments of the invention may be combined with each other within the scope of protection of the present application. In addition, although the functional blocks are divided in the device diagram, in some cases, the blocks may be divided differently from those in the device. Further, the terms "first," "second," and the like, as used herein, do not limit the data and the execution order, but merely distinguish the same items or similar items having substantially the same functions and actions.

With the popularization of rapid charging of mobile phones, the charge pump voltage conversion circuit is gradually applied more and more widely by virtue of the high power conversion efficiency of the charge pump voltage conversion circuit. The charge pump voltage conversion circuit is generally composed of a charge pump chip circuit and an energy storage unit. For example, referring to fig. 1, fig. 1 shows a two-phase buck charge pump conversion circuit according to an embodiment of the present invention, the circuit is composed of a two-phase charge pump chip circuit and two energy storage units, the two energy storage units include a first energy storage unit C _FLY1 And a second energy storage unit C _FLY2 。

Specifically, the two-phase charge pump chip circuit comprises two single-phase charge pump circuits connected in parallel, wherein each single-phase charge pump circuit comprises an input power supply V connected in series _IN Four switching tubes between the first energy storage unit C and the ground GND _FLY1 Is connected between a first connection point P1 and a second connection point P2, the first connection point P1 is a connection point between a first switching tube Q1 and a second switching tube Q2, the second connection point P2 is a connection point between a third switching tube Q3 and a fourth switching tube Q4, and a second energy storage unitC _FLY2 Is connected between a third connection point P3 and a fourth connection point P4, the third connection point P3 is a connection point between a fifth switch tube Q5 and a sixth switch tube Q6, the fourth connection point P4 is a connection point between a seventh switch tube Q7 and an eighth switch tube Q8, and the connection point between the second switch tube Q2 and the third switch tube Q3 and the connection point between the sixth switch tube Q6 and the seventh switch tube Q7 are both output ends V _OUT 。

For a single-phase charge pump circuit formed by a first switch tube Q1, a second switch tube Q2, a third switch tube Q3 and a fourth switch tube Q4, when the circuit works, the four switch tubes are alternately switched at a specific working frequency, in a half time of a period, the first switch tube Q1 and the third switch tube Q3 are switched on, the second switch tube Q2 and the fourth switch tube Q4 are switched off, and an input power supply V is switched off _IN A first energy storage unit C is formed by a first switching tube Q1 and a third switching tube Q3 _FLY1 And an output capacitor C _OUT Charged in series and at an output terminal V _OUT And (5) supplying power. In the other half time of one cycle, the first switching tube Q1 and the third switching tube Q3 are turned off, the second switching tube Q2 and the fourth switching tube Q4 are turned on, and the first energy storage unit C _FLY1 And an output capacitor C _OUT The output end V is formed by connecting a second switching tube Q2 and a fourth switching tube Q4 in parallel _OUT And (5) supplying power. Thus, when the switching frequency is fast enough, the output voltage fluctuates around half the value of the input voltage along with the change of the switching state of the energy storage unit and the output capacitor every time, so that the halving output of the input voltage is realized, namely the ratio of the input voltage to the output voltage is 2:1. and two single-phase charge pump circuits are adopted to work alternately, so that the efficiency of the charge pump circuits can be further improved, the ripple waves are reduced, and the waveform of each node of the specific circuit is shown in fig. 2.

The power conversion efficiency of the charge pump circuit is mainly determined by the conduction loss of the switching tube, the driving loss of the switching tube and the loss of charge transfer among the input capacitor, the energy storage unit and the output capacitor. On the premise of a certain chip area and process, the main reason for determining the power conversion efficiency of the charge pump circuit is usually the charge transfer loss between capacitors, and the charge transfer loss is mainly caused by the imbalance of current when the energy storage unit is charged and discharged. As can be seen from fig. 2, when the switching state of the switching tube changes, a current pulse on the energy storage unit path is always accompanied, and the larger this current pulse, the more uneven the current on the energy storage unit, and the larger the charge transfer loss.

The amplitude of the current pulse on the energy storage unit is determined by the voltage difference between the energy storage unit and the input capacitor or the output capacitor when the switch state changes. As an initial moment in fig. 2, the second energy storage unit C _FLY2 Voltage at and output capacitance C _OUT The voltage difference between the voltages of the two secondary energy storage units is larger, so that when the sixth switching tube Q6 and the eighth switching tube Q8 are conducted, and the fifth switching tube Q5 and the seventh switching tube Q7 are cut off, a secondary energy storage unit C is generated in the path of the second energy storage unit _FLY2 Flow direction output capacitor C _OUT Large current pulse I _FLY2 . When the charge pump circuit works, the voltage difference is mainly determined by the switching frequency and the capacitance value of the energy storage unit. Then, at a certain switching frequency, as shown in fig. 3, the larger the capacitance value of the energy storage unit, the smaller the voltage difference, the smaller the current pulse amplitude when the switching state changes, and the more average the current generated during the charge transfer, so that the power conversion efficiency of the charge pump circuit is higher.

In summary, the larger the capacity value of the energy storage unit, the higher the power conversion efficiency. However, the capacitance value of the single capacitor is usually limited under the requirement of height limitation, and in order to increase the capacitance value of the energy storage unit, a plurality of capacitors are usually connected in parallel. In the prior art, a plurality of capacitors are usually arranged side by side around a charge pump chip, and the charge pump chip and energy storage units are both disposed on the same side of the same circuit substrate, as shown in fig. 4, which is a schematic diagram of a dual-phase charge pump package provided in the prior art, the dual-phase charge pump chip 1 has a first connection unit and a second connection unit, a first connection end P1 of the first connection unit corresponds to a first connection point P1 of the circuit of fig. 1, a second connection end P2 of the first connection unit corresponds to a second connection point P2 of the circuit of fig. 1, a first connection end P3 of the second connection unit corresponds to a third connection point P3 of the circuit of fig. 1, a second connection end P4 of the second connection unit corresponds to a fourth connection point P4 of the circuit of fig. 1, each energy storage unit is composed of two capacitors, the first routing unit includes a capacitor flcy 1a and a capacitor fy 1b, the second energy storage unit includes a pad fly2a and a capacitor cfy 2b, and each capacitor is connected to a PCB in the corresponding connection point.

In the charge pump packaging system, the energy storage unit and the charge pump chip are arranged in a plane, and the occupied substrate area of the charge pump voltage reduction system formed by the energy storage unit and the charge pump chip is far larger than the area of the charge pump chip due to more peripheral passive devices. In addition, in the way of placing capacitors in parallel on the plane, the distances between two capacitors connected in parallel in the same energy storage unit and the charge pump chip are different, which can cause serious uneven current distribution, so that the energy storage unit has higher equivalent series resistance in the charging and discharging loop, and the power conversion efficiency is reduced.

Specifically, as shown in fig. 4, since the connection ends of the connection units are led out from two sides of the chip, the distance between the two capacitors in one energy storage unit and the connection ends of the chip is unequal due to the arrangement mode of the planar capacitors, for example, for the capacitor Cfly2a and the capacitor Cfly2b, in the charging cycle, the current Ifly2 flows out from the first connection end of the second connection unit of the chip, and the two capacitors connected in parallel are charged by the current Ifly2a and the current Ifly2b through the routing. However, since the capacitor Cfly2b is farther from the chip than the capacitor Cfly2a, a longer trace will result in a higher equivalent series resistance and equivalent series inductance on the loop of the current Ifly2b, as shown by a curve a in fig. 5, where the curve a is a curve of the equivalent series resistance of the loop formed by the current Ifly2 in fig. 4 as a function of frequency, in conjunction with fig. 6, in a first stage 1, the equivalent series resistance of the two parallel capacitors is minimum, the currents flowing through the capacitors Cfly2a and Cfly2b are equal, and in a second stage 2, as the frequency increases, the equivalent series inductance generated by the additional trace of the current Ifly2b loop presents a higher inductance, so that the current flowing through the capacitor Cfly2a increases, the current flowing through the capacitor Cfly2b decreases, and the equivalent series resistance of the parallel capacitors gradually increases, as the frequency increases, the current distribution between the two capacitors becomes higherThe voltage is more and more uneven, and the equivalent series resistance of the parallel capacitor bank is increased. . In the third stage 3, on one hand, the current is distributed more and more unevenly between the two parallel capacitors, and on the other hand, the skin effect of the PCB trace under high frequency is gradually obvious, resulting in a rapid increase of the equivalent series resistance. It should be noted that although the operating frequency of the charge pump circuit is not more than 1MHz, the current I on the energy storage unit path can be seen from FIG. 2 _FLY There are rich higher harmonic components, which also cause an imbalance in the high frequency current between the two capacitors that can still cause significant efficiency losses.

Generally, the EMI spurs of a circuit are determined by the harmonic components of the current, the area of the current loop, and the phase relationship of the various currents. In this packaging system, first, as can be seen from fig. 2, the current on the energy storage unit has very rich harmonic components; secondly, when the planar parallel capacitor as shown in fig. 4 is adopted, the area of the PCB surrounded by the paths of the current Ifly1 and the current Ifly2 is large; finally, at any time, the current Ifly1 and the current Ifly2 both rotate in the same direction, as shown in fig. 4, when the capacitor Cfly2a and the capacitor Cfly2b are charged, the capacitor Cfly1a and the capacitor Cfly1b discharge to the load, the charging current Ifly2 of the capacitor Cfly2a and the capacitor Cfly2b flows from the first connection end P3 of the second connection unit to the second connection end P4 of the second connection unit in the clockwise direction, and at the same time, the discharging current Ifly1 of the capacitor Cfly1a and the capacitor Cfly1b also flows from the second connection end P2 of the first connection unit to the first connection end P1 of the first connection unit in the clockwise direction, and far field radiation generated by the two phase currents superposes in phase, resulting in strong EMI radiation when the circuit operates.

In addition, in the package system shown in fig. 4, the thickness of the capacitor is often higher than that of the chip, so that when the package system shown in fig. 4 is adopted, it is difficult to add a heat dissipation scheme above the chip to dissipate heat of the chip, and meanwhile, the heat dissipation capability of the pins below the chip is limited, so that the charge pump chip often performs power limitation processing due to temperature rise of the chip when in operation.

In summary, in the charge pump package system in the prior art, the distance between the energy storage unit and the charge pump chip is large, and the distances between the two capacitors in the same energy storage unit and the charge pump chip are unequal, so that the current distribution of the two capacitors in the same energy storage unit is uneven, the equivalent series resistance and the equivalent series inductance are high, the working efficiency of the charge pump chip is low, the electromagnetic interference is large, and the heat dissipation effect is poor. Embodiments of the present invention provide a charge pump package system and a charge pump voltage conversion module, which can reduce a distance between a charge pump chip and an energy storage unit, so that current distribution between the energy storage units is more uniform, an equivalent series resistance and an equivalent series inductance are smaller, working efficiency of the chip is improved, EMI stray radiation and interference are reduced, and heat dissipation is better.

In a first aspect, an embodiment of the present invention provides a charge pump package system, please refer to fig. 7 and fig. 8 in combination, in which the charge pump package system 100 includes: a first substrate 10, a charge pump chip 20 and at least one energy storage unit 30. The first substrate 10 has a first surface and a second surface, the first surface of the charge pump chip 30 is attached to the first surface of the first substrate 10, the charge pump chip 20 is electrically connected to the first substrate 10 through the first surface of the charge pump chip 20, the second surface of the first substrate 10 is provided with at least one a pad 11 and at least one B pad 12, the number of the a pads 11, the number of the B pads 12 and the number of the energy storage units 30 are respectively equal, the first end of each energy storage unit 30 is fixed on the first substrate 10 through the corresponding a pad 11, the second end of each energy storage unit 30 is fixed on the first substrate 10 through the corresponding B pad 12, the first substrate 10 is provided with a via 13, and the charge pump chip 20 is respectively connected to each a pad 11 and each B pad 12 through the via 13 of the first substrate 10, so that the charge pump chip 20 is electrically connected to each energy storage unit 30.

The charge pump chip 20 is a DC-DC converter that stores energy by using a flying capacitor or a pumping capacitor, and is not a DC-DC converter that uses an inductor or a transformer. Generally, the charge pump chip 20 is packaged at a wafer level, and a connection point is disposed on a first surface of the charge pump chip 20 to electrically connect with the first substrate 10, so that the charge pump chip 20 can be connected with peripheral circuits, such as other active devices or passive devices, through the first substrate 10. In addition, in the charge pump package system, the charge pump chip 20 and each energy storage unit 30 are respectively disposed on two sides of the first substrate 10, and the via holes 13 disposed on the first substrate 10 are electrically connected, and the via holes 13 disposed on the first substrate 10 are metalized via holes 13, which can electrically connect the printed wires between the charge pump chip 20 and the pads of the first substrate 10, so that the charge pump chip 20 and the energy storage units 30 are disposed on different planes, i.e., a three-dimensional manner is adopted.

In some embodiments, the charge pump chip has at least one connection unit, the connection unit has a first connection end and a second connection end, and the number of the connection units is equal to the number of the energy storage units. The first connection end of each connection unit of the charge pump chip is correspondingly connected with the first connection point of each A bonding pad, the second connection end of each connection unit of the charge pump chip is correspondingly connected with the second connection point of each B bonding pad, the first connection point of each A bonding pad is positioned in the center of the first end of each energy storage unit, and the second connection point of each B bonding pad is positioned in the center of the second end of each energy storage unit; or each A bonding pad is provided with at least two first connecting points, each B bonding pad is provided with at least two second connecting points, each first connecting end is correspondingly connected with each first connecting point of each A bonding pad, each second connecting end is correspondingly connected with each second connecting point of each B bonding pad, the geometric centers of the at least two first connecting points of each A bonding pad are located at the center of the first end of each energy storage unit, and the geometric centers of the at least two second connecting points of each B bonding pad are located at the center of the second end of each energy storage unit.

The first connecting end and the second connecting end of each connecting unit are pins of the charge pump chip. The geometric centers of the at least two first connection points of the a pad are the centers of the patterns formed by the connection lines of the first connection points of the a pad, and the geometric centers of the at least two second connection points of the B pad may be the centers of the patterns formed by the connection lines of the second connection points of the B pad. In practical application, the graph formed by the connection line of each first connection point of the a pad and the graph formed by the connection line of each second connection point of the B pad can be line segments, triangles, rectangles, polygons, other regular graphs or other irregular graphs.

In the charge pump packaging system, each first connecting point of each A bonding pad is connected with a corresponding via hole of each first connecting end of the charge pump chip, and each first connecting point of each B bonding pad is connected with a corresponding via hole of each second connecting end of the charge pump chip; and when each A pad has a first connection point and each B pad has a second connection point, the first connection point of each A pad is located in the middle of the first end of each energy storage unit, and the second connection point of each B pad is located in the middle of the second end of each energy storage unit, or when each A pad has at least two first connection points and each B pad has at least two second connection points, the geometric centers of the at least two first connection points of each A pad are located in the middle of the first end of each energy storage unit, and the geometric centers of the at least two second connection points of each B pad are located in the middle of the second end of each energy storage unit. Therefore, the trend of the current on the energy storage unit rich in harmonic components is changed, as shown in I1 of fig. 9, the plane where the current on the energy storage unit moves is perpendicular to the first substrate 10, and the trend of the current on the energy storage unit in the plane setting mode is parallel to the plane of the substrate, so that the area surrounded by the plane where the current on the energy storage unit moves in fig. 9 is mainly determined by the thickness of the first substrate and is far smaller than the area surrounded by the plane where the current on the energy storage unit moves in fig. 4, and the amplitude of EMI stray radiation can be reduced. In addition, the number of the pad connection points can be selected by combining the magnitude of the transmission current between the charge pump chip and the energy storage unit, and when the current is large, the current can be jointly carried by adopting a mode of a plurality of through holes and a plurality of connection points.

In practical applications, when each a-pad has a first connection point and each B-pad has a second connection point, the first connection point of each a-pad may be located approximately in the middle of the first end of each energy storage unit, and the second connection point of each B-pad may be located approximately in the middle of the second end of each energy storage unit, or when each a-pad has at least two first connection points and each B-pad has at least two second connection points, the geometric centers of the at least two first connection points of each a-pad may be located approximately in the middle of the first end of each energy storage unit, and the geometric centers of the at least two second connection points of each B-pad may be located approximately in the middle of the second end of each energy storage unit, which also falls within the protection scope of the present invention.

It can be understood that, when the charge pump chip is an even number of phase charge pump chips, planes in which currents on the energy storage units of each phase run are parallel, and directions of currents of each two phases are opposite, so that far-field magnetic fields generated by current loops of each two phases can be mutually offset, and the charge pump packaging system basically does not have electromagnetic radiation.

In some embodiments, the charge pump package system includes at least two energy storage units, and the energy storage units are arranged in parallel. Through with energy storage unit parallel arrangement, can practice thrift the occupation of plate area, improve the integrated level.

As mentioned above, the larger the capacity value of the energy storage unit, the higher the power conversion efficiency. In order to improve the conversion efficiency of the charge pump, in some embodiments, the energy storage unit includes an inverse geometric capacitor, or the energy storage unit includes at least two capacitors arranged in parallel and connected in parallel. The inverse geometric capacitor is a nonstandard customized capacitor, the width of the capacitor is obviously greater than the length of the capacitor, the inverse geometric capacitor is also called as an inverse proportional capacitor, the length of the capacitor is equal to that of the standard capacitor compared with the standard customized capacitor, the width of the capacitor is greater than that of the standard capacitor, and therefore compared with the standard capacitor with the same capacitor terminal distance and the same height, the inverse proportional capacitor can achieve capacitance value improvement by increasing the width of the capacitor. In practical application, the number of capacitors included in each energy storage unit may be set according to actual needs, and is not limited herein.

In some embodiments, the inverse geometric capacitor and the capacitor are both multilayer ceramic chip capacitors, and the ceramic chip capacitors are capacitors formed by using ceramic materials as media, coating a layer of metal film on the surface of the ceramic materials, and then sintering the ceramic materials at high temperature to be used as electrodes.

The structure of the charge pump package system is described in detail below with the two-phase charge pump chip as the charge pump chip, and in practical application, the charge pump chip may be a single-phase charge pump chip, a three-phase charge pump chip, or a multi-phase charge pump chip, which is not limited herein.

Specifically, in some embodiments, referring to fig. 10, the charge pump chip is a two-phase charge pump chip, the two-phase charge pump chip has a first connection unit and a second connection unit, and the charge pump package system includes a first energy storage unit 31, a second energy storage unit 32, a first a pad 111, a second a pad 112, a first B pad 121, and a second B pad 122; a first end of the first energy storage cell 31 is fixed on the first substrate 10 through the first a pad 111, a second end of the first energy storage cell 31 is fixed on the first substrate 10 through the first B pad 121, a first end of the second energy storage cell 32 is fixed on the first substrate 10 through the second a pad 112, and a second end of the second energy storage cell 32 is fixed on the first substrate 10 through the second B pad 122.

When the first a pad 111 and the second a pad 112 both have a first connection point, and the first B pad 121 and the second B pad 122 both have a second connection point, please continue to refer to fig. 10, in which the first connection end of the first connection unit of the two-phase charge pump chip is connected to the first connection point M1 of the first a pad 111, the second connection end of the first connection unit of the two-phase charge pump chip is connected to the second connection point N1 of the first B pad 121, the first connection end of the second connection unit of the two-phase charge pump chip is connected to the first connection point M2 of the second a pad 112, and the second connection end of the second connection unit of the two-phase charge pump chip is connected to the second connection point N2 of the second B pad 122; the first connection point M1 of the first a pad 111 is located at a first end center position of the first energy storage unit 31, the second connection point N1 of the first B pad 121 is located at a second end center position of the first energy storage unit 31, the first connection point M2 of the second a pad 112 is located at a first end center position of the second energy storage unit 32, and the second connection point N2 of the second B pad 122 is located at a second end center position of the second energy storage unit 32.

Or when the first a bonding pad and the second a bonding pad both have at least two first connection points, the first B bonding pad and the second B bonding pad both have at least two second connection points, the first connection end of the first connection unit of the two-phase charge pump chip is connected with each first connection point of the first a bonding pad, the second connection end of the first connection unit of the two-phase charge pump chip is connected with each second connection point of the first B bonding pad, the first connection end of the second connection unit of the two-phase charge pump chip is connected with each first connection point of the second a bonding pad, the second connection end of the second connection unit of the two-phase charge pump chip is connected with each second connection point of the second B bonding pad, the geometric centers of the at least two first connection points of the first a bonding pad are located at the geometric center position of the first end of the first energy storage unit, the geometric centers of the at least two second connection points of the first B bonding pad are located at the geometric center position of the second end of the first energy storage unit, and the geometric centers of the at least two second connection points of the second a bonding pad are located at the geometric center position of the second end of the second energy storage unit. When each first connecting point of the first a bonding pad is arranged linearly, the geometric center of at least two first connecting points of the first a bonding pad refers to the center of a line segment formed by connecting each first connecting point of the first a bonding pad.

For example, referring to fig. 11, the first a pad 111 has two first connection points M11 and M12, respectively, the second a pad 112 has two first connection points M21 and M22, respectively, the first B pad 121 has two second connection points N11 and N12, respectively, the second B pad 122 has two second connection points N21 and N22, respectively, the first connection end of the first connection unit is connected to the first connection point M11 of the first a pad 111 and the first connection point M12 of the first a pad 111 through a via, respectively, the second connection end of the first connection unit is connected to the second connection point N11 of the first B pad 121 and the second connection point N12 of the first B pad 121 through a via, respectively, the first connection end of the second connection unit is connected to the first connection point M21 of the second a pad 112 and the second connection point M22 of the second a pad 112 through a via, respectively, and the second connection end of the second connection unit is connected to the second connection point N21 of the second B pad 122 and the second connection point N22 of the second B pad 122 through a via. In addition, the geometric centers of the first connection point M11 of the first a pad 111 and the first connection point M12 of the first a pad 111 are located at the first end center position of the first energy storage unit 31, wherein the geometric centers of the first connection point M11 of the first a pad and the first connection point M12 of the first a pad are the centers of line segments formed by connecting the first connection point M11 of the first a pad and the first connection point M12 of the first a pad; the geometric centers of the second connection point N11 of the first B pad 121 and the second connection point N12 of the first B pad 121 are located at the second end center position of the first energy storage cell, the geometric centers of the first connection point M21 of the second a pad 112 and the second connection point M22 of the second a pad 1221 are located at the first end center position of the second energy storage cell, and the geometric centers of the second connection point N21 of the second B pad and the second connection point N22 of the second B pad are located at the second end center position of the second energy storage cell.

For another example, referring to fig. 12, the first a pad 111 has three first connection points M11, M12, and M13, the second a pad 112 has three first connection points M21, M22, and M23, the first B pad 121 has three second connection points N11, N12, and N13, and the second B pad 122 has three second connection points N21, N22, and N23. The first connection end of the first connection unit is respectively connected with the first connection point M11 of the first a pad 111, the first connection point M12 of the first a pad 111 and the first connection point M13 of the first a pad 111 through a via, the second connection end of the first connection unit is respectively connected with the second connection point N11 of the first B pad 121, the second connection point N12 of the first B pad 121 and the second connection point N13 of the first B pad 121 through a via, the first connection end of the second connection unit is respectively connected with the first connection point M21 of the second a pad 112, the first connection point M22 of the second a pad 112 and the first connection point M23 of the second a pad 112 through a via, and the second connection end of the second connection unit is respectively connected with the second connection point N21 of the second B pad 122, the second connection point N22 of the second B pad 122 and the second connection point N23 of the second B pad 122 through a via. In addition, the geometric centers of the first connection point M11 of the first a-pad 111, the first connection point M12 of the first a-pad 111, and the first connection point M13 of the first a-pad 111 are located at the first end center position of the first energy storage unit 31, wherein the geometric centers of the first connection point M11 of the first a-pad, the first connection point M12 of the first a-pad, and the first connection point M13 of the first a-pad 111 are the centers of line segments formed by connecting the first connection point M11 of the first a-pad 111, the first connection point M12 of the first a-pad 111, and the first connection point M13 of the first a-pad 111; the geometric centers of the second connection point N11 of the first B pad 121, the second connection point N12 of the first B pad 121, and the second connection point N13 of the first B pad 121 are located at the second end center position of the first energy storage cell, the geometric centers of the first connection point M21 of the second a pad 112, the first connection point M22 of the second a pad 112, and the first connection point M23 of the second a pad 112 are located at the first end center position of the second energy storage cell, the second connection point N21 of the second B pad 122, the second connection point N22 of the second B pad 122, and the second connection point N23 of the second B pad 122 are located at the second end center position of the second energy storage cell.

The first a pad 111, the second a pad 112, the first B pad 121, and the second B pad 122 are disposed on the second surface of the first substrate 10, that is, the first energy storage unit 31 and the second energy storage unit 32 are disposed on the second surface of the first substrate 10, and the two-phase charge pump chip is disposed on the first surface of the first substrate. The connection mode of the two-phase charge pump chip with each a bonding pad and each B bonding pad is via connection, that is, the first connection end of the first connection unit is connected with the first connection point of the first a bonding pad 111 via a via hole, the second connection end of the first connection unit is connected with the second connection point of the first B bonding pad 121 via a via hole, the first connection end of the second connection unit is connected with the first connection point of the second a bonding pad 112 via a via hole, and the second connection end of the second connection unit is connected with the second connection point of the second B bonding pad 122 via hole. Through setting up diphase charge pump chip and energy storage unit in the plane of difference, adopt the mode of three-dimensional setting promptly, compare the mode that charge pump chip and energy storage unit set up in the coplanar among the prior art, this charge pump packaging system can show and reduce charge pump packaging system's occupation of plate area to reduce the line distance of walking of charge pump chip and energy storage unit, improve the work efficiency of chip.

In some embodiments, referring to fig. 13, the first energy storage unit includes a first inverse geometric capacitor 31, and the second energy storage unit includes a second inverse geometric capacitor 32; similarly, a first end of the first inverse geometric capacitor is fixed on the first substrate through a first A bonding pad, a second end of the first inverse geometric capacitor is fixed on the first substrate through a first B bonding pad, a first end of the second inverse geometric capacitor is fixed on the first substrate through a second A bonding pad, and a second end of the second inverse geometric capacitor is fixed on the first substrate through a second B bonding pad; first A pad with second A pad all has a first tie point, first B pad with second B pad all has a second tie point, and the first tie point of first A pad is located first end central point that reverses geometric capacitance, and the second tie point of first B pad is located first end central point that reverses geometric capacitance, and the first tie point of second A pad is located the first end central point that reverses geometric capacitance of second, and the second tie point of second B pad is located the second end central point that reverses geometric capacitance of second. Or the first A bonding pad and the second A bonding pad are respectively provided with at least two first connecting points, the first B bonding pad and the second B bonding pad are respectively provided with at least two second connecting points, the geometric centers of the at least two first connecting points of the first A bonding pad are positioned at the first end central position of the first inverse geometric capacitor, the geometric centers of the at least two second connecting points of the first B bonding pad are positioned at the second end central position of the first inverse geometric capacitor, the geometric centers of the at least two first connecting points of the second A bonding pad are positioned at the first end central position of the second inverse geometric capacitor, and the geometric centers of the at least two second connecting points of the second B bonding pad are positioned at the second end central position of the second inverse geometric capacitor.

Referring to fig. 13, the width W of the first inverse geometric capacitor 31 is greater than the length L, and the energy storage unit is configured as an inverse geometric capacitor, so that the capacitance can be increased to improve the power conversion efficiency of the chip by increasing the width of the inverse geometric capacitor. In addition, the connection points of the bonding pads are arranged at the center of the terminal of the inverse geometric capacitor, so that the distance between the pins of the charge pump chip and the terminal of the inverse geometric capacitor can be reduced, the equivalent series resistance is smaller, and the current distribution is more uniform.

In some embodiments, referring to fig. 14 and fig. 15 in combination, the first energy storage unit 31 includes a first capacitor 311 and a second capacitor 312 connected in parallel, and the second energy storage unit 32 includes a third capacitor 321 and a fourth capacitor 322 connected in parallel; the first end of the first capacitor 311 and the first end of the second capacitor 312 are fixed on the first substrate 10 through the first a pad 111, the second end of the first capacitor 311 and the second end of the second capacitor 312 are fixed on the first substrate 10 through the first B pad 121, the first end of the third capacitor 321 and the first end of the fourth capacitor 322 are fixed on the first substrate 10 through the second a pad 112, and the second end of the third capacitor 321 and the second end of the fourth capacitor 322 are fixed on the first substrate 10 through the second B pad 122.

The first a pad and the second a pad both have a first connection point, the first B pad and the second B pad both have a second connection point, the first connection point M1 of the first a pad 111 is located at a midpoint between a connection line between the first end of the first capacitor 311 and the first end of the second capacitor 312, the second connection point N1 of the first B pad 121 is located at a midpoint between a connection line between the second end of the first capacitor 311 and the second end of the second capacitor 312, the first connection point M2 of the second a pad 112 is located at a midpoint between a connection line between the first end of the third capacitor 321 and the first end of the fourth capacitor 322, and the second connection point N2 of the second B pad 122 is located at a midpoint between a connection line between the second end of the third capacitor 321 and the second end of the fourth capacitor 322.

Or the first A bonding pad and the second A bonding pad are respectively provided with at least two first connecting points, the first B bonding pad and the second B bonding pad are respectively provided with at least two second connecting points, the geometric centers of the at least two first connecting points of the first A bonding pad are positioned at the midpoint of a connecting line of the first end of the first capacitor and the first end of the second capacitor, the geometric centers of the at least two second connecting points of the first B bonding pad are positioned at the midpoint of a connecting line of the second end of the first capacitor and the second end of the second capacitor, the geometric centers of the at least two first connecting points of the second A bonding pad are positioned at the midpoint of a connecting line of the first end of the third capacitor and the first end of the fourth capacitor, and the geometric centers of the at least two second connecting points of the second B bonding pad are positioned at the midpoint of a connecting line of the second end of the third capacitor and the second end of the fourth capacitor.

Specifically, for example, referring to fig. 16, the first a pad 111 has two first connection points, which are M11 and M12, respectively, the second a pad 112 has two first connection points, which are M21 and M22, respectively, the first B pad 121 has two second connection points, which are N11 and N12, respectively, the second B pad 122 has two second connection points, which are N21 and N22, respectively, the first connection end of the first connection unit is connected to the first connection point M11 of the first a pad 111 and the first connection point M12 of the first a pad 111 through a via, respectively, the second connection end of the first connection unit is connected to the second connection point N11 of the first B pad 121 and the second connection point N12 of the first B pad 121 through a via, the first connection end of the second connection unit is connected to the first connection point M21 of the second a pad 112 and the second connection point M22 of the second a pad 112 through a via, respectively, and the second connection end of the second connection unit is connected to the second connection point N21 of the second B pad 122 and the second connection point N22 of the second B pad 122 through a via. In addition, the geometric centers of the first connection point M11 of the first a-pad 111 and the first connection point M12 of the first a-pad 111 are located at the midpoint of the connection line between the first end of the first capacitor 311 and the first end of the second capacitor 312, wherein the geometric centers of the first connection point M11 of the first a-pad and the first connection point M12 of the first a-pad are the centers of line segments formed by the connection line between the first connection point M11 of the first a-pad and the first connection point M12 of the first a-pad; the geometric centers of the second connection point N11 of the first B pad 121 and the second connection point N12 of the first B pad 121 are located at the midpoint between the second ends of the first capacitor 311 and the second capacitor 312, the geometric centers of the first connection point M21 of the second a pad 112 and the second connection point M22 of the second a pad 112 are located at the midpoint between the first ends of the third capacitor 321 and the fourth capacitor 322, and the geometric centers of the second connection point N21 of the second B pad 122 and the second connection point N22 of the second B pad 122 are located at the midpoint between the second ends of the third capacitor 321 and the fourth capacitor 322.

For another example, referring to fig. 17, the first a pad 111 has three first connection points M11, M12, and M13, the second a pad 112 has three first connection points M21, M22, and M23, the first B pad 121 has three second connection points N11, N12, and N13, and the second B pad 122 has three second connection points N21, N22, and N23. The first connection end of the first connection unit is respectively connected with the first connection point M11 of the first a pad 111, the first connection point M12 of the first a pad 111 and the first connection point M13 of the first a pad 111 through a via, the second connection end of the first connection unit is respectively connected with the second connection point N11 of the first B pad 121, the second connection point N12 of the first B pad 121 and the second connection point N13 of the first B pad 121 through a via, the first connection end of the second connection unit is respectively connected with the first connection point M21 of the second a pad 112, the first connection point M22 of the second a pad 112 and the first connection point M23 of the second a pad 112 through a via, and the second connection end of the second connection unit is respectively connected with the second connection point N21 of the second B pad 122, the second connection point N22 of the second B pad 122 and the second connection point N23 of the second B pad 122 through a via. In addition, the geometric centers of the first connection point M11 of the first a-pad 111, the first connection point M12 of the first a-pad 111, and the first connection point M13 of the first a-pad 111 are located at a midpoint of a connection line between the first end of the first capacitor 311 and the first end of the second capacitor 312, wherein the geometric centers of the first connection point M11 of the first a-pad, the first connection point M12 of the first a-pad, and the first connection point M13 of the first a-pad 111 are the centers of line segments formed by the connection line between the first connection point M11 of the first a-pad, the first connection point M12 of the first a-pad, and the first connection point M13 of the first a-pad 111; the geometric centers of the second connection point N11 of the first B-pad 121, the second connection point N12 of the first B-pad 121, and the second connection point N13 of the first B-pad 121 are located at the midpoint between the second end of the first capacitor 311 and the second end of the second capacitor 312, the geometric centers of the first connection point M21 of the second a-pad 112, the first connection point M22 of the second a-pad 112, and the first connection point M23 of the second a-pad 112 are located at the midpoint between the first end of the third capacitor 321 and the first end of the fourth capacitor 322, and the geometric centers of the second connection point N21 of the second B-pad, the second connection point N22 of the second B-pad, and the second connection point N23 of the second B-pad are located at the midpoint between the second end of the third capacitor 321 and the second end of the fourth capacitor 322.

In the charge pump package system, referring to fig. 18, the plane of the current direction I2 of the first energy storage unit and the plane of the current direction I3 of the second energy storage unit are parallel to each other, and the directions of the currents at each moment are opposite, so that far-field magnetic fields generated by the two current loops are mutually cancelled, and the electromagnetic radiation is small.

In addition, in the charge pump packaging system, since the first connection point M1 of the first a-pad 111 is located at a midpoint of a connection line between the first end of the first capacitor 311 and the first end of the second capacitor 312, that is, a distance from the first connection point M1 of the first a-pad 111 to the first end of the first capacitor 311 is equal to a distance from the first connection point M1 of the first a-pad 111 to the first end of the second capacitor 312, and since a distance between the first connection point of the first connection unit of the charge pump chip and the first connection point of the first a-pad is fixed, a distance from the first connection end of the first connection unit of the charge pump chip to the first end of the first capacitor 311 is equal to a distance from the first connection end of the first connection unit of the charge pump chip to the second capacitor 312.

It can be seen that the distance between the connection end of each connection unit of the charge pump chip and the two capacitor terminals of the corresponding energy storage unit is equal, and as shown in fig. 6, the current distribution between the two parallel connection capacitors can substantially keep the current distribution uniform as the frequency increases. As can be seen from the foregoing, when the total current flowing through the two capacitors connected in parallel is the same, the more uniform the current distribution between the two capacitors connected in parallel, the smaller the equivalent series resistance, the smaller the loss. As can also be seen from the curve b in fig. 5, the curve b is a curve of the equivalent series resistance of the loop formed by the current I2 in fig. 18 changing with the frequency, and in the charge pump packaging system provided by the embodiment of the present invention, when the frequency is higher, the equivalent series resistance can be ensured to be lower until the equivalent series resistance is increased due to the skin effect at a high frequency. In a lower frequency range, compared with the prior art, the charge pump packaging system provided by the embodiment of the invention has the advantages that the equivalent series resistance of the parallel capacitor is smaller because the routing distances of the charge pump system and the parallel capacitor in the energy storage unit are equal, so that the power conversion efficiency of the charge pump chip can be improved.

In some embodiments, referring to fig. 19, the charge pump package system further includes a second substrate 40 and a landing layer 50; through holes are formed in the second substrate 40 and the transit layer 50, and at least one D pad 41 is arranged on the first surface of the second substrate 40; the interposer layer 50 is disposed around the charge pump chip 20, and the interposer layer 50 is located between the first substrate 10 and the second substrate 20, and the charge pump chip 20 is connected to the respective D-pads 41 through the vias of the first substrate 10, the vias of the interposer layer 50, and the vias of the second substrate 40. Furthermore, the charge pump chip is connected to the D pad through the trace of the first substrate, the trace of the switching layer, and/or the trace of the second substrate.

Specifically, with reference to fig. 19, the charge pump chip 20 is electrically connected to the pads 14 on the first substrate through the vias of the first substrate 10, and then the pads 14 on the first substrate are electrically connected to the D-pads 41 through the vias of the first substrate 10, the vias of the landing layer 50, and the vias of the second substrate 40. In the charge pump package system, the charge pump chip 20 may be connected to other peripheral circuits through the D pad of the second substrate 40, for example, other active devices or passive devices, so as to implement series and parallel operations with other circuit systems, which is beneficial to system integration design and improves the degree of freedom of integration design of the charge pump chip. In practical applications, the D pad and the via connection line of the charge pump chip may be related according to practical requirements, and are not limited herein.

In some embodiments, referring to fig. 20, the charge pump package system further comprises a thermally conductive layer 60; the first surface of the second substrate 40 is further provided with at least one C pad 42, the first surface of the heat conduction layer 60 is disposed on the second surface of the charge pump chip 20, the second surface of the heat conduction layer 60 is disposed on the second surface of the second substrate 40, and the heat conduction layer is thermally connected to the C pad 42 through the via hole of the second substrate.

Specifically, the second face of charge pump chip 20 is located in the first face subsides of heat-conducting layer 60, and the second face of second base plate 40 is located in the second face subsides of heat-conducting layer 60, and wherein, the material of heat-conducting layer is the higher material of heat conductivity, and in this charge pump packaging system, because charge pump chip and energy storage unit set up on the plane of difference, so, the second face of charge pump chip can laminate the setting with the heat-conducting layer to make the charge pump chip dispel the heat, improve packaging system's radiating effect.

In summary, in the charge pump package system provided by the embodiment of the present invention, the distance between the charge pump chip and the energy storage unit is smaller, the current distribution between two capacitors connected in parallel in the same energy storage unit is more uniform, the equivalent series resistance and the equivalent series inductance are smaller, the working efficiency of the chip is higher, the EMI stray radiation and interference are reduced, and the heat dissipation is better.

In some of the embodiments, the first substrate is a printed circuit board, an RDL layer, and/or a low temperature co-fired ceramic layer; the second substrate is a printed circuit board, an RDL layer and/or a low-temperature co-fired ceramic layer; the switching layer is a printed circuit board, an RDL layer and/or a low-temperature co-fired ceramic layer. The first substrate, the second substrate and the switching layer can be formed by a multi-layer structure. Both surfaces of each substrate and the intermediate layer can be used for wiring to realize the connection of the chip and the bonding pad.

In a second aspect, an embodiment of the present invention further provides a charge pump voltage conversion module, including the charge pump package system according to any one of the first aspect. This charge pump voltage conversion module sets up the charge pump chip and the plane of energy storage unit in the difference, adopt the mode that the solid set up promptly, compare the mode that charge pump chip and energy storage unit set up in the coplanar among the prior art, this charge pump voltage conversion module can show and reduce charge pump packaging system's board occupation area, and the distance between reducible charge pump chip and the energy storage unit, reduce the line distance of walking of charge pump chip and energy storage unit promptly, thereby reduce equivalent series resistance and equivalent series inductance, improve charge pump chip's work efficiency. The working efficiency of the chip is improved.

It should be noted that the above-described device embodiments are merely illustrative, where the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; within the idea of the invention, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and these modifications or substitutions do not depart from the spirit of the corresponding technical solutions of the embodiments of the present invention.

Claims

1. A charge pump packaging system, comprising: the charge pump comprises a first substrate, a charge pump chip and two energy storage units;

the first surface of the charge pump chip is attached to the first surface of the first substrate, the charge pump chip is electrically connected with the first substrate through the first surface of the charge pump chip, the second surface of the first substrate is provided with two A bonding pads and two B bonding pads, a through hole is formed in the first substrate, and the charge pump chip is respectively connected with the A bonding pads and the B bonding pads through the through hole of the first substrate so as to enable the charge pump chip to be electrically connected with the energy storage units;

the charge pump chip is a two-phase charge pump chip, and the two-phase charge pump chip is provided with two connecting units;

the first end of each energy storage unit is fixed on the first substrate through the corresponding A bonding pad, and the second end of each energy storage unit is fixed on the first substrate through the corresponding B bonding pad;

each A bonding pad is provided with a first connecting point, each B bonding pad is provided with a second connecting point, the first connecting end of each connecting unit is connected with the corresponding first connecting point of the A bonding pad, the second connecting end of each connecting unit is connected with the corresponding second connecting point of the B bonding pad, each first connecting point is located at the center of the first end of the corresponding energy storage unit, and each second connecting point is located at the center of the second end of the corresponding energy storage unit;

or each of the a pads has at least two first connection points, each of the B pads has at least two second connection points, the first connection end of each of the connection units is connected to each of the first connection points of the corresponding a pad, the second connection end of each of the connection units is connected to each of the second connection points of the corresponding B pad, the geometric centers of the at least two first connection points of each of the a pads are located at the center positions of the first ends of the corresponding energy storage units, and the geometric centers of the at least two second connection points of each of the B pads are located at the center positions of the second ends of the corresponding energy storage units.

2. The charge pump packaging system of claim 1, wherein the energy storage unit comprises an inverse geometric capacitor, or wherein the energy storage unit comprises at least two capacitors arranged in parallel and connected in parallel.

3. The charge pump package system of claim 2, wherein the inverse geometric capacitance and the capacitance are each multilayer ceramic patch capacitances.

4. The charge pump packaging system of claim 3, wherein the energy storage units are arranged in parallel.

5. The charge pump package system of any of claims 1-4, wherein the two energy storage cells comprise a first energy storage cell and a second energy storage cell, the two A pads comprise a first A pad and a second A pad, the two B pads comprise a first B pad and a second B pad, the first energy storage cell comprises a first inverse geometric capacitance, and the second energy storage cell comprises a second inverse geometric capacitance;

a first end of the first inverse geometric capacitor is fixed on the first substrate through the first A bonding pad, a second end of the first inverse geometric capacitor is fixed on the first substrate through the first B bonding pad, a first end of the second inverse geometric capacitor is fixed on the first substrate through the second A bonding pad, and a second end of the second inverse geometric capacitor is fixed on the first substrate through the second B bonding pad;

the first A bonding pad and the second A bonding pad are respectively provided with a first connecting point, the first B bonding pad and the second B bonding pad are respectively provided with a second connecting point, the first connecting point of the first A bonding pad is positioned at the center of the first end of the first inverse geometric capacitor, the second connecting point of the first B bonding pad is positioned at the center of the second end of the first inverse geometric capacitor, the first connecting point of the second A bonding pad is positioned at the center of the first end of the second inverse geometric capacitor, and the second connecting point of the second B bonding pad is positioned at the center of the second end of the second inverse geometric capacitor;

or, the first a pad and the second a pad both have at least two first connection points, the first B pad and the second B pad both have at least two second connection points, the geometric centers of the at least two first connection points of the first a pad are located at the first end center position of the first inverse geometric capacitance, the geometric centers of the at least two second connection points of the first B pad are located at the second end center position of the first inverse geometric capacitance, the geometric centers of the at least two first connection points of the second a pad are located at the first end center position of the second inverse geometric capacitance, and the geometric centers of the at least two second connection points of the second B pad are located at the second end center position of the second inverse geometric capacitance.

6. The charge pump package system of any of claims 1-4, wherein the two energy storage cells comprise a first energy storage cell and a second energy storage cell, the two A pads comprise a first A pad and a second A pad, the two B pads comprise a first B pad and a second B pad, the first energy storage cell comprises a first capacitor and a second capacitor connected in parallel, and the second energy storage cell comprises a third capacitor and a fourth capacitor connected in parallel;

the first end of the first capacitor and the first end of the second capacitor are fixed on the first substrate through the first A bonding pad, the second end of the first capacitor and the second end of the second capacitor are fixed on the first substrate through the first B bonding pad, the first end of the third capacitor and the first end of the fourth capacitor are fixed on the first substrate through the second A bonding pad, and the second end of the third capacitor and the second end of the fourth capacitor are fixed on the first substrate through the second B bonding pad;

the first A bonding pad and the second A bonding pad are respectively provided with a first connecting point, the first B bonding pad and the second B bonding pad are respectively provided with a second connecting point, the first connecting point of the first A bonding pad is positioned at the midpoint of a connecting line between the first end of the first capacitor and the first end of the second capacitor, the second connecting point of the first B bonding pad is positioned at the midpoint of a connecting line between the second end of the first capacitor and the second end of the second capacitor, the first connecting point of the second A bonding pad is positioned at the midpoint of a connecting line between the first end of the third capacitor and the first end of the fourth capacitor, and the second connecting point of the second B bonding pad is positioned at the midpoint of a connecting line between the second end of the third capacitor and the second end of the fourth capacitor;

or, the first a pad and the second a pad both have at least two first connection points, the first B pad and the second B pad both have at least two second connection points, the geometric centers of the at least two first connection points of the first a pad are located at the positions of the connection midpoints of the first ends of the first capacitors and the first ends of the second capacitors, the geometric centers of the at least two second connection points of the first B pad are located at the positions of the connection midpoints of the second ends of the first capacitors and the second capacitors, the geometric centers of the at least two first connection points of the second a pad are located at the positions of the connection midpoints of the first ends of the third capacitors and the first ends of the fourth capacitors, and the geometric centers of the at least two second connection points of the second B pad are located at the positions of the connection midpoints of the second ends of the third capacitors and the second ends of the fourth capacitors.

7. The charge pump package system of any of claims 1-4, further comprising a second substrate and an interposer layer; through holes are formed in the second substrate and the switching layer, and at least one D bonding pad is arranged on the first surface of the second substrate;

the transfer layer is arranged around the charge pump chip, the transfer layer is located between the first substrate and the second substrate, and the charge pump chip is connected with the D bonding pads through the via holes of the first substrate, the via holes of the transfer layer and the via holes of the second substrate.

8. The charge pump package system of claim 7, further comprising a thermally conductive layer;

the first surface of the second substrate is also provided with at least one C pad, the first surface of the heat conduction layer is arranged on the second surface of the charge pump chip, the second surface of the heat conduction layer is arranged on the second surface of the second substrate, and the heat conduction layer is thermally connected with the C pad through the via hole of the second substrate.

9. The charge pump package system of claim 7, wherein the first substrate is a printed circuit board, an RDL layer, and/or a low temperature co-fired ceramic layer; the second substrate is a printed circuit board, an RDL layer and/or a low-temperature co-fired ceramic layer; the switching layer is a printed circuit board, an RDL layer and/or a low-temperature co-fired ceramic layer.

10. A charge pump voltage conversion module comprising the charge pump packaging system of any one of claims 1-9.