CN114038920A - 一种超高效的交叉指式背接触异质结太阳电池 - Google Patents
一种超高效的交叉指式背接触异质结太阳电池 Download PDFInfo
- Publication number
- CN114038920A CN114038920A CN202111092423.7A CN202111092423A CN114038920A CN 114038920 A CN114038920 A CN 114038920A CN 202111092423 A CN202111092423 A CN 202111092423A CN 114038920 A CN114038920 A CN 114038920A
- Authority
- CN
- China
- Prior art keywords
- ultra
- silicon substrate
- solar cell
- back contact
- heterojunction solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005516 engineering process Methods 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000002310 reflectometry Methods 0.000 claims abstract description 10
- 230000005641 tunneling Effects 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910017107 AlOx Inorganic materials 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 229910021418 black silicon Inorganic materials 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种超高效交叉指式背接触异质结太阳电池，包括晶硅衬底，所述晶硅衬底的前表面包括至少一种钝化层，所述前表面经过RIE等离子刻蚀方法，形成一种超低反射率表面；所述晶硅衬底的背表面从内到外分别包括隧穿氧化层、交替排列的n+掺杂非晶硅层/p+掺杂非晶硅层、激光开槽区、钝化层和金属电极。本发明采用RIE等离子刻蚀技术制备前表面低反射率黑硅结构，进一步改善高效电池光学吸收，电流密度达到42.6mA/cm2以上，同时匹配前表面多种钝化结构，进一步提升电池钝化能力，电池开路电压保持在710mA以上，量产化HBC电池效率达到25.5％以上。
Description
技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种超高效的交叉指式背接触异质结太阳电池。
背景技术
近年来，能源危机与环境压力促进了太阳电池研究和产业的迅速发展。目前，晶体硅太阳电池是技术最成熟、应用最广泛的太阳电池，在光伏市场中的比例超过90％，并且在未来相当长的时间内都将占据主导地位。在高速发展的光伏产业中，光电转换效率的提高和电池制造成本的降低已经成为整个光伏行业的根本，随着光伏电池技术的不断进步，越来越多的高效太阳电池进入人们的视野。
光伏领跑者计划将继续推动我国光伏技术进步，高效晶体硅技术将成为发展方向。降本增效始终是光伏行业永恒的主题，随着行业不断的技术进步和政策推动，大众的目光逐渐转移至度电成本上，高效电池因此备受瞩目。
发明内容
本发明提供一种超高效掺杂非晶硅技术的交叉指式背接触异质结太阳电池结构。
本发明所采用的技术方案是：
一种超高效掺杂非晶硅技术的交叉指式背接触异质结太阳电池，包括晶硅衬底，所述晶硅衬底的前表面包括至少一种钝化层，所述前表面经过RIE等离子刻蚀方法，形成一种超低反射率表面；所述晶硅衬底的背表面从内到外分别包括隧穿氧化层、交替排列的n+掺杂非晶硅层/p+掺杂非晶硅层、激光开槽区、钝化层和金属电极。
进一步地，所述晶硅衬底为N型单晶硅衬底或P型单晶硅衬底中的任意一种。
进一步地，所述晶硅衬底的前表面为制绒面，采用RIE等离子刻蚀方法制绒，
采用RIE等离子刻蚀方法制备所需绒面的过程为：
(1)将硅片放置于用于等离子刻蚀承载载具里，送入等离子刻蚀设备腔体。
(2)对设备进行抽真空，在室温25℃，保持设备真空度在100-1000mtorr下，维持压力稳定，通入100-1000sccm SF6、100-5000sccm O2以及100-2000sccm Cl2，进行等离子刻蚀，刻蚀时间为1-100min。
(3)完成刻蚀后，关闭反应气体，并将设备真空抽至100mtorr以下，保持1-5min，然后通入1-10SLM N2，使设备达到常压状态；
(4)完成刻蚀工艺，取出硅片。
进一步地，所述晶硅衬底的背表面为酸抛光面或碱抛光面中的任意一种。
进一步地，所述晶硅衬底的前表面设置的钝化层为SiO2、AlOx、SiNx、SiONx中的一种或几种组合。
进一步地，所述晶硅衬底的背表面的隧穿氧化层通过常压热氧氧化、LPCVD热氧氧化中的任意一种方式制得。
进一步地，所述交替排列的n+掺杂非晶硅层/p+掺杂非晶硅层，采用LPCVD掺杂技术实现，其中B掺杂利用BCl3气态掺杂源实现。
进一步地，n+掺杂非晶硅层和p+掺杂非晶硅层交替采用掩膜和激光开槽技术分别实现。
进一步地，所述晶硅衬底背表面钝化层为SiNx和SiONx其中一种或两种组合。
进一步地，所述金属电极为银浆。
本发明的有益效果是：
(1)本发明采用RIE等离子刻蚀技术制备前表面低反射率黑硅结构，进一步改善高效电池光学吸收，电流密度达到42.6mA/cm2以上，同时匹配前表面多种钝化结构，进一步提升电池钝化能力，电池开路电压保持在710mA以上，量产化HBC电池效率达到25.5％以上。
(2)本发明应用RIE等离子刻蚀方法，大幅降低前表面反射率，提升光吸收。尤其适用于在交叉指式背接触异质结太阳电池(HBC)中作为掺杂非晶硅钝化层的形成以及前表面光吸收层的制作。
附图说明
图1是本发明的HBC电池结构的截面图。
图2是交叉指式背接触异质结太阳电池(HBC)示意图。
图3是本发明的RIE等离子刻蚀绒面示意图。
图4是现有的湿法制绒面示意图。
图中标号：晶硅衬底1，钝化层2，隧穿氧化层3，n+掺杂非晶硅层4，p+掺杂非晶硅层5，激光开槽区6，钝化层7，金属电极8。
具体实施方式
以下结合附图对本发明的技术方案做进一步详细说明，应当指出的是，具体实施方式只是对本发明的详细说明，不应视为对本发明的限定。
如图1所示，一种基于LPCVD的高效掺杂非晶硅技术的交叉指式背接触异质结太阳电池，包括晶硅衬底1，在本实施例中，所述晶硅衬底1为N型单晶硅衬底或P型单晶硅衬底，所述晶硅衬底1的前表面为单晶太阳电池采用RIE等离子刻蚀方法，制得所需绒面反射率小于7％，较传统湿法刻蚀绒面反射率大于10％，有明显降低，以便可以得到更好的光吸收和最优短路电流，本实施例，短路电流密度达到42.6mA/cm2，比现有技术中的短路电流密度提升0.58mA/cm2以上。
本申请中，所述RIE等离子刻蚀方法制备所需绒面的过程为：
(1)将硅片放置于用于等离子刻蚀承载载具里，送入等离子刻蚀设备腔体。
(2)对设备进行抽真空，在室温25℃，保持设备真空度在100-1000mtorr下，维持压力稳定，通入100-1000sccm SF6、100-5000sccm O2以及100-2000sccm Cl2，进行选择性腐蚀等离子刻蚀，刻蚀时间为1-100min。
(3)完成刻蚀后，关闭反应气体，并将设备真空抽至100mtorr以下，保持1-5min，然后通入1-10SLM N2，使设备达到常压状态；
(4)完成刻蚀工艺，取出硅片。
采用RIE等离子刻蚀方法后，可以进一步增加电池表面比表面积，增加光吸收利用，同时微纳米结构还可以大幅降低前表面反射率，进一步提升光利用率，配合本发明所描述的HBC电池，其前表面无任何遮挡，这时所增加的光吸收和利用率，可以达到更好的效果，带来更高的电池效率。
所述晶硅衬底的背表面采用体积比2：1：5的HNO3/HF/H2O制备的酸抛光面或质量分数49％的KOH碱抛光面中的任意一种，背表面要求反射率大于30％，并经过5-10min的O3清洗以达到最优表面状态，降低污染可能带来的表面复合，为后道钝化工序提供较优条件。
所述晶硅衬底1的前表面包括至少一种钝化层2；所述晶硅衬底1的背表面从内到外分别包括隧穿氧化层3、交替排列的n+掺杂非晶硅层4和p+掺杂非晶硅层5、激光开槽区6、钝化层7和金属电极8。
所述晶硅衬底1的前表面钝化层为SiO2、Al2O3、Si3N4、SiON中的一种或几种组合，钝化膜可以选择利用无绕镀技术来减少背面绕镀影响。钝化膜的制备可以利用水平PECVD设备实现。
所述晶硅衬底1的背表面的隧穿氧化层通过常压热氧氧化、LPCVD热氧氧化中的任意一种方式制得，氧化层的厚度在1-3nm之间可获得较好的载流子隧穿效应。
所述n+掺杂非晶硅层和p+掺杂非晶硅层，可以利用LPCVD掺杂技术实现，其中B掺杂利用BCl3气态掺杂源实现，n+掺杂非晶硅层和p+掺杂非晶硅层交替利用掩膜和激光开槽技术分别实现。
本发明实施例中，所述晶硅衬底的背表面的钝化层采用Si3N4和SiON其中一种或两种组合，区别于前表面，此处不需要使用Al2O3钝化薄膜，因为Al2O3薄膜带有负电荷在N型电池背面回形成反型不利于载流子的传输。
本发明实施例中，所述金属电极为银浆。
本实施例与对比例(传统湿法制绒方式)具体测试结果如表1，其中Voc代表开路电压，Isc代表短路电流密度，FF代表填充因子，EFF代表电池片转换效率。
表1实施例与对比例的晶硅太阳能电池片电性能参数测试结果
| 工艺 | Voc(mV) | Isc(mA/cm<sup>2</sup>) | FF(％) | Eff(％) |
| 对比例 | 714.9 | 42.02 | 83.65 | 25.13 |
| 实施例 | 715.4 | 42.6 | 83.68 | 25.50 |
对比实施例与对比例的数据可知，实施例中，RIE等离子刻蚀技术制备的电池片短路电流密度比对比例中制得的电池片短路电流密度高0.58mA/cm2，说明RIE制绒技术可以提升对光吸收，从而得到更优短路电流。而且，实施例中的开路电压、电池片转换效率均得到提高。
本发明制备的HBC电池保留了交叉指式背接触电池的，更优的背面钝化接触能力，可以保持710mV以上的高开路电压。同时采用RIE等离子刻蚀技术制备前表面低反射率黑硅结构，进一步改善高效电池光学吸收，电流密度达到42.6mA/cm2以上，量产化HBC电池效率达到25.5％以上。
显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
Claims (10)
1.一种超高效交叉指式背接触异质结太阳电池，其特征在于，包括晶硅衬底，所述晶硅衬底的前表面包括至少一种钝化层，所述前表面经过RIE等离子刻蚀方法，形成一种超低反射率表面；所述晶硅衬底的背表面从内到外分别包括隧穿氧化层、交替排列的n+掺杂非晶硅层/p+掺杂非晶硅层、激光开槽区、钝化层和金属电极。
2.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述晶硅衬底为N型单晶硅衬底或P型单晶硅衬底中的任意一种。
3.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述晶硅衬底的前表面为制绒面，采用RIE等离子刻蚀方法制绒，
采用RIE等离子刻蚀方法制备所需绒面的过程为：
(1)将硅片放置于用于等离子刻蚀承载载具里，送入等离子刻蚀设备腔体；
(2)对设备进行抽真空，在室温25℃，保持设备真空度在100-1000mtorr下，维持压力稳定，通入100-1000sccm SF6、100-5000sccm O2以及100-2000sccm Cl2，进行等离子刻蚀，刻蚀时间为1-100min；
(3)完成刻蚀后，关闭反应气体，并将设备真空抽至100mtorr以下，保持1-5min，然后通入1-10SLM N2，使设备达到常压状态；
(4)完成刻蚀工艺，取出硅片。
4.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述晶硅衬底的背表面为酸抛光面或碱抛光面中的任意一种。
5.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述晶硅衬底的前表面设置的钝化层为SiO2、AlOx、SiNx、SiONx中的一种或几种组合。
6.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述晶硅衬底的背表面的隧穿氧化层通过常压热氧氧化、LPCVD热氧氧化中的任意一种方式制得。
7.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述交替排列的n+掺杂非晶硅层/p+掺杂非晶硅层，采用LPCVD掺杂技术实现，其中B掺杂利用BCl3气态掺杂源实现。
8.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，n+掺杂非晶硅层和p+掺杂非晶硅层交替采用掩膜和激光开槽技术分别实现。
9.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述晶硅衬底背表面钝化层为SiNx和SiONx其中一种或两种组合。
10.根据权利要求1所述的一种超高效交叉指式背接触异质结太阳电池，其特征在于，所述金属电极为银浆。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111092423.7A CN114038920B (zh) | 2021-09-17 | 2021-09-17 | 一种超高效的交叉指式背接触异质结太阳电池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111092423.7A CN114038920B (zh) | 2021-09-17 | 2021-09-17 | 一种超高效的交叉指式背接触异质结太阳电池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114038920A true CN114038920A (zh) | 2022-02-11 |
| CN114038920B CN114038920B (zh) | 2024-01-26 |
Family
ID=80134448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111092423.7A Active CN114038920B (zh) | 2021-09-17 | 2021-09-17 | 一种超高效的交叉指式背接触异质结太阳电池 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114038920B (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362221A (zh) * | 2014-11-27 | 2015-02-18 | 苏州阿特斯阳光电力科技有限公司 | 一种rie制绒的多晶硅太阳电池的制备方法 |
| CN105355707A (zh) * | 2015-10-14 | 2016-02-24 | 广东爱康太阳能科技有限公司 | 一种高效晶硅太阳能电池及其制备方法 |
| CN205104495U (zh) * | 2015-10-14 | 2016-03-23 | 广东爱康太阳能科技有限公司 | 一种高效晶硅太阳能电池 |
| CN108336154A (zh) * | 2018-02-02 | 2018-07-27 | 中国科学院微电子研究所 | 晶体硅太阳能电池及其制备方法 |
| KR20200086511A (ko) * | 2019-01-09 | 2020-07-17 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| CN111816727A (zh) * | 2020-07-14 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | 一种基于lpcvd的高效掺杂非晶硅技术的交叉指式背接触异质结太阳电池 |
| CN112968077A (zh) * | 2021-04-09 | 2021-06-15 | 桂林电子科技大学 | 一种用于硅薄膜电池表面的高深宽比陷光结构制备方法 |
-
2021
- 2021-09-17 CN CN202111092423.7A patent/CN114038920B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362221A (zh) * | 2014-11-27 | 2015-02-18 | 苏州阿特斯阳光电力科技有限公司 | 一种rie制绒的多晶硅太阳电池的制备方法 |
| CN105355707A (zh) * | 2015-10-14 | 2016-02-24 | 广东爱康太阳能科技有限公司 | 一种高效晶硅太阳能电池及其制备方法 |
| CN205104495U (zh) * | 2015-10-14 | 2016-03-23 | 广东爱康太阳能科技有限公司 | 一种高效晶硅太阳能电池 |
| CN108336154A (zh) * | 2018-02-02 | 2018-07-27 | 中国科学院微电子研究所 | 晶体硅太阳能电池及其制备方法 |
| KR20200086511A (ko) * | 2019-01-09 | 2020-07-17 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| CN111816727A (zh) * | 2020-07-14 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | 一种基于lpcvd的高效掺杂非晶硅技术的交叉指式背接触异质结太阳电池 |
| CN112968077A (zh) * | 2021-04-09 | 2021-06-15 | 桂林电子科技大学 | 一种用于硅薄膜电池表面的高深宽比陷光结构制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114038920B (zh) | 2024-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2023178918A1 (zh) | 一种低成本接触钝化全背电极太阳能电池及其制备方法 | |
| WO2022012180A1 (zh) | 一种基于lpcvd的高效掺杂非晶硅技术的交叉指式背接触异质结太阳电池 | |
| CN112349816A (zh) | 一种基于PECVD技术的高效低成本N型TOPCon电池的制备方法 | |
| WO2017020689A1 (zh) | 基于p型硅衬底的背接触式太阳能电池及其制备方法 | |
| CN112490304A (zh) | 一种高效太阳能电池的制备方法 | |
| CN109285897A (zh) | 一种高效钝化接触晶体硅太阳电池及其制备方法 | |
| WO2017020690A1 (zh) | 基于p型硅衬底的背接触式太阳能电池 | |
| CN213519984U (zh) | 太阳能电池 | |
| CN111628052A (zh) | 一种钝化接触电池的制备方法 | |
| CN112820793A (zh) | 太阳能电池及其制备方法 | |
| CN110571302A (zh) | 一种n型晶体硅电池的制备方法 | |
| CN111599895A (zh) | 一种晶硅太阳能钝化接触电池的制备方法 | |
| CN111477720A (zh) | 一种钝化接触的n型背结太阳能电池及其制备方法 | |
| CN115084314A (zh) | 一种TOPCon钝化接触结构的IBC太阳能电池制备方法 | |
| CN115332366A (zh) | 一种背钝化接触异质结太阳电池及其制备方法 | |
| CN112825340B (zh) | 一种钝化接触电池及其制备方法和应用 | |
| CN110571303B (zh) | 一种p型晶体硅电池的制备方法 | |
| WO2022156101A1 (zh) | 一种太阳能电池叠层钝化结构及其制备方法 | |
| CN214753785U (zh) | 一种单面钝化接触的太阳能电池 | |
| CN103050573B (zh) | 一种背钝化电池的制备方法 | |
| CN117457797A (zh) | TOPCon电池结构的制备方法及应用 | |
| CN114038924A (zh) | 一种基于rie等离子刻蚀制绒的背接触异质结太阳电池 | |
| CN111697110A (zh) | 异质结太阳能电池及其制造方法 | |
| CN111463306A (zh) | 一种新型异质结电池及其制备方法 | |
| CN116666479A (zh) | 一种双面发电的高效选择性发射极晶硅电池及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230116 Address after: 518000 Room 103, Building 3, Shekou Lanyuan, Nanshan District, Shenzhen, Guangdong Province Applicant after: Ou Wenkai Address before: 221399 room 1222, office building, No.11 Zhujiang East Road, Xuzhou high tech Industrial Development Zone, Jiangsu Province Applicant before: Pule new energy technology (Xuzhou) Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230331 Address after: No. 168, West Side of Kechuang Road, High-tech Industrial Development Zone, Taixing City, Taizhou City, Jiangsu Province, 225400 Applicant after: Pule New Energy Technology (Taixing) Co.,Ltd. Address before: 518000 Room 103, Building 3, Shekou Lanyuan, Nanshan District, Shenzhen, Guangdong Province Applicant before: Ou Wenkai |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |