CN114026673A - Heater support kit for bevel etch chamber - Google Patents

Heater support kit for bevel etch chamber Download PDF

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Publication number
CN114026673A
CN114026673A CN202080044306.0A CN202080044306A CN114026673A CN 114026673 A CN114026673 A CN 114026673A CN 202080044306 A CN202080044306 A CN 202080044306A CN 114026673 A CN114026673 A CN 114026673A
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China
Prior art keywords
heater
plate
assembly
arm
support
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Pending
Application number
CN202080044306.0A
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Chinese (zh)
Inventor
T·A·恩古耶
J·李
A·M·帕特尔
A·A·哈贾
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US16/419,813 external-priority patent/US10903066B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN114026673A publication Critical patent/CN114026673A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

Embodiments described herein relate generally to an apparatus for processing a substrate. In one or more embodiments, a heater support kit includes: a heater assembly having a heater plate with an upper surface and a lower surface; a snap ring disposed on at least a portion of the upper surface of the heater plate; a heater arm assembly containing a heater arm and supporting the heater assembly; and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.

Description

Heater support kit for bevel etch chamber
Background
Technical Field
Embodiments described herein relate generally to a method and apparatus for processing a substrate. More particularly, embodiments described herein relate to heater support kits for a bevel etch chamber.
Description of the Related Art
Plasma processing is commonly used in many semiconductor manufacturing processes for the manufacture of integrated circuits, flat panel displays, magnetic media, and other devices. A plasma or ionized gas is generated within a Remote Plasma Source (RPS) and flows into a processing chamber and is then applied to a workpiece to complete a process, such as deposition, etching, or implantation. Processing is generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber that holds the substrate. During a deposition or etching process, a component (such as a mask or a showerhead) may be positioned opposite the substrate. The precursor gas or gas mixture in the chamber is energized (e.g., excited) into a plasma using the RPS. The excited gas or gas mixture reacts to selectively etch a film layer on the edge of the substrate.
However, the oblique edges of the substrate (such as the sides and corners thereof) experience conditions that may be different from the conditions experienced at other portions of the substrate. These different conditions affect process parameters such as film thickness, etch uniformity, and/or film stress. The difference in etch rate and/or film properties (such as film thickness or stress) between the center and edge of the substrate becomes significant and may result in poor performance of the device.
Accordingly, what is needed in the art is an improved apparatus for a bevel etch process.
Disclosure of Invention
Embodiments described herein relate generally to an apparatus for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly, a snap ring, a heater arm assembly, and a heater support plate. The heater assembly has a heater plate having an upper surface and a lower surface. The snap ring is disposed on at least a portion of the upper surface of the heater plate. The heater arm assembly contains a heater arm and supports the heater assembly. The heater support plate is disposed between the heater plate and the heater arm and is in contact with at least a portion of the lower surface of the heater plate. In other embodiments, the heater support kit further comprises a lower support plate disposed below the heater support plate and a center plug disposed below the lower support plate.
In one or more embodiments, a method for bevel etch processing includes placing a substrate having a deposition layer including a center and a bevel edge on a substrate support inside a process chamber. A mask is placed over the substrate. An edge ring is disposed around the substrate and on the substrate support. The method further comprises the following steps: flowing a process gas mixture to etch near the bevel edge; and flowing a purge gas through the first, second, and third apertures of the mask in a center of the substrate near a top of the substrate.
In other embodiments, a method includes placing a substrate having a deposition layer including a center and a bevel edge on a substrate support inside a process chamber. A mask is placed over the substrate. An edge ring is disposed below the substrate and on a substrate support. The method also includes raising the edge ring to contact the mask. The method further comprises the following steps: flowing a process gas mixture near the bevel edge; and flowing a purge gas through the first, second, and third apertures of the mask in a center of the substrate near a top of the substrate.
In some embodiments, a method includes placing a substrate having a deposition layer including a center and a bevel edge on a substrate support inside a process chamber. A mask is placed over the substrate. An edge ring is disposed around the substrate and on the substrate support. The method further comprises the following steps: flowing a process gas mixture near the bevel edge; and flowing a purge gas through the first, second, and third apertures of the mask in a center of the substrate near a top of the substrate. The process gas comprises nitrogen (N)2) Oxygen (O)2) Nitrogen trifluoride (NF)3) One or more of argon, helium, or any combination thereof.
Drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
Fig. 1 depicts a schematic cross-sectional view of a processing chamber 100 according to one or more embodiments described and discussed herein.
Fig. 2 depicts a schematic bottom view of a mask utilized in the chamber of fig. 1, according to one or more embodiments described and discussed herein.
FIG. 3 depicts a schematic bottom view of an edge ring utilized in the chamber of FIG. 1 in accordance with one or more embodiments described and discussed herein.
Fig. 4 depicts a schematic top view of a cover plate utilized in the chamber of fig. 1, according to one or more embodiments described and discussed herein.
Fig. 5 depicts a schematic cross-sectional view of a process chamber containing a heater support kit according to one or more embodiments described and discussed herein.
Fig. 6 depicts a schematic top view of the heater support kit shown in fig. 5 according to one or more embodiments described and discussed herein.
Fig. 7 depicts a schematic exploded view of the heater support kit shown in fig. 5, according to one or more embodiments described and discussed herein.
Fig. 8 depicts a schematic cross-sectional view of a process chamber containing another heater support kit according to one or more embodiments described and discussed herein.
Fig. 9 depicts a schematic exploded view of the heater support kit shown in fig. 8 according to one or more embodiments described and discussed herein.
Fig. 10 depicts a schematic cross-sectional view of an attachment assembly in accordance with one or more embodiments described and discussed herein.
Fig. 11 depicts a schematic top view of a heater assembly according to one or more embodiments described and discussed herein.
Fig. 12 depicts a schematic perspective view of the heater assembly shown in fig. 11, according to one or more embodiments described and discussed herein.
Fig. 13A-13C depict schematic views of a cleat assembly according to one or more embodiments described and discussed herein.
Fig. 14A-14C depict schematic views of a heater support plate according to one or more embodiments described and discussed herein.
Fig. 15A-15B depict schematic views of a lower support plate according to one or more embodiments described and discussed herein.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one or more embodiments may be beneficially incorporated in other embodiments.
Detailed Description
Embodiments described herein relate generally to a method and apparatus for processing a substrate. More particularly, embodiments described herein relate to methods and apparatus for bevel etch processing. In some embodiments, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate having a deposition layer including a center and a bevel edge on a cover plate inside a process chamber. A mask is placed over the substrate. An edge ring is disposed around/under the substrate. The method further comprises the following steps: flowing a process gas mixture near the bevel edge; and flowing a purge gas through the first, second, and third apertures of the mask at a center of the substrate near a top of the substrate.
Fig. 1 illustrates a schematic cross-sectional view of a processing chamber 100 according to an aspect of the present disclosure. As shown, the processing chamber 100 is an etch chamber suitable for etching a substrate, such as substrate 154. An example of a processing chamber that may be suitable to benefit from exemplary aspects of the present disclosure is commercially available from Applied Materials, Inc., of Santa Clara, Calif
Figure BDA0003414774750000031
Etch processing chamber and PrecisionTMA processing chamber. It is contemplated that other processing systems (including those from other manufacturers) may be adapted to benefit from aspects of the present disclosure.
The processing chamber 100 may be used for various plasma processes. In one aspect, the processing chamber 100 may be used to perform a dry etch with one or more etchants. For example, the process chamber may be used to ignite nitrogen (N) from one or more fluorocarbons (e.g., carbon tetrafluoride, hexafluoroethane, etc.), gases2) Oxygen (O)2) Nitrogen trifluoride (NF)3) Or a combination thereof. In another embodiment, the processing chamber 100 may be used for plasma enhanced chemical vapor deposition with one or more chemistries.
The processing chamber 100 includes a chamber body 102, a lid assembly 106, a support assembly 104, and a gas outlet 160. The lid assembly 106 is positioned at an upper end of the chamber body 102. The lid assembly 106 and support assembly 104 of figure 1 may be used with any processing chamber for plasma or thermal processing. Chambers from other manufacturers may also be used with the above components. The support assembly 104 is disposed within the chamber body 102, and the lid assembly 106 is coupled to the chamber body 102 and encloses the support assembly 104 within the processing volume 120. The chamber body 102 includes a slit valve opening 126 formed in a sidewall of the chamber body 102. The slit valve opening 126 is selectively opened and closed to allow a substrate handling robot (not shown) to enter the processing volume 120 for substrate transfer.
The spacers 110 may be a dielectric material, such as a ceramic or metal oxide (e.g., aluminum oxide and/or aluminum nitride), that contacts the electrodes and electrically and thermally separates the electrodes from the gas distributor 112 and the chamber body 102. The gas distributor 112 has openings for admitting process gas into the processing volume 120. Process gases may be supplied to the processing chamber 100 via conduit 114, and the process gases may enter the gas mixing zone 116 before flowing through the opening to the substrate 154. The gas distributor 112 may be connected to the RPS.
The support assembly 104 may be any suitable substrate support, such as a vacuum chuck, an electrostatic chuck, or a heated pedestal. In one or more embodiments, the substrate support is an "L" shaped base to save space for load lock mounting. The support assembly has a vacuum chuck line, a heater line, and a TC that detects the temperature of the support assembly. In some embodiments, the substrate support 104 is configured to support a substrate 154 for processing. The lift mechanism allows the substrate support 104 to move vertically within the chamber body 102 between a lower transfer position and a plurality of elevated processing positions. The support member 104 may be formed from a metal or ceramic material, such as a metal oxide or nitride or an oxide/nitride mixture, such as aluminum, aluminum oxide, aluminum nitride, or an aluminum oxide/aluminum nitride mixture. The heater 122 may be coupled to the support assembly 104. The heater 122 may be embedded within the support assembly 104 or coupled to a surface of the support assembly 104. The heater 122 may be coupled to a power source extending outside the chamber 100.
The reactant blocking plate or mask 150 may be part of the lid assembly 106 or may be a separate removable piece. The mask 150 has a dome-shaped body 204, the dome-shaped body 204 having a flat bottom surface. As shown in fig. 2, the mask 150 has circular apertures. In the center of the aperture are three openings 202 to form small chokes to ensure that the purge gas is distributed evenly in all directions. In some embodiments, the three openings 202 may be of uniform size and shape and equally spaced. The mask 150 may be lowered to contact the substrate 154. In some embodiments, the mask 150 may be quartz or other ceramic material, and may be coated with Ni or NiO as desired, or may be a chemically or plasma resistant material, such as yttria or yttrium oxide. The lid assembly 106 further includes a plasma source 162. The plasma source 162 is adjacent to the mask 150.
Fig. 3 illustrates a schematic top view of an edge ring 180 utilized in the chamber of fig. 1 in accordance with an aspect of the present disclosure. In some embodiments, the edge ring 180 is disposed adjacent to the contact mask 150. The edge ring 180 has an annular body 306. Edge ring 180 includes several openings 304 for engaging substrate assembly 104. Edge ring 180 is disposed on substrate assembly 104. In some embodiments, the edge ring 180 may be disposed adjacent to the cover plate 152. The edge ring 180 may comprise a ceramic material, such as quartz or alumina. The edge ring 180 has a plurality of protrusions 302. The protrusion 302 may be a circular bump, square, rectangle, hexagon, or any other shape. The tab 302 is disposed about the body 306. Ten tabs 302 are shown, however, there may be more or fewer tabs 302. The projections may be equally spaced around the circumference of the body 306 of the edge ring 180. In some embodiments, the protrusions 302 reduce heat transfer from the substrate assembly 104 and the substrate 154. Additionally, the edge ring 180 provides a pressure differential between the top of the substrate and the bottom of the substrate 154. In some embodiments, the edge ring 180 provides uniform leveling over the substrate 154.
Fig. 4 illustrates a schematic top view of a cover plate 152 utilized in the chamber of fig. 1 in accordance with an aspect of the present disclosure. The cover plate 152 includes a central aperture 402, a plurality of openings 404, a plurality of fasteners 410, a scalloped edge 406, and a plurality of spokes 408. The central aperture 402 may be a circular opening, a hexagonal opening, a rectangular opening, or any other shaped opening. The plurality of openings 404 are circular openings circumferentially displaced around the central aperture 402. Each of the plurality of openings 404 is smaller than the central aperture 402. Although the present disclosure shows eight openings 404, the plurality of openings 404 may include more or less than eight openings 404. In some embodiments, the openings 404 are evenly spaced around the central aperture 402. In other embodiments, the distance between the openings 404 varies. The plurality of spokes 408 are grooves in the cover plate 152. A plurality of spokes 408 radiate from a circular groove surrounding the central aperture 402. The plurality of spokes 408 are linear grooves that extend radially outward toward the scalloped edge 406. Scalloped edge 406 includes a wavy pattern with uniform dimples. The scalloped edge 406 may have a rounded edge, a square edge, or a sharp edge. When placed over the cover plate 152 and snap ring 180, the scalloped edges 406 prevent the substrate from slipping.
In operation, a method of etching a substrate begins with placing a substrate on a substrate support inside a processing chamber. After the deposition process is performed in the same chamber or a different chamber, the substrate has a dielectric layer, a center, and a bevel edge. The mask 150 is lowered over the substrate 154 to maintain a small gap between the mask and the substrate of between 0.003 inches and 0.100 inches. In one or more embodiments, the substrate 154 and the edge ring 180 are raised to contact the mask 150. In some embodiments, the distance between the substrate 154 and the mask 150 is less than 100 mils. In some embodiments, the distance between the substrate 154 and the mask 150 is about 10 mils. In other embodiments, the distance between the substrate 154 and the mask 150 is less than 100 mils, such as between 5 mils and 20 mils. An edge ring 180 is disposed around/under the substrate 154. In other embodiments, an edge ring 180 is disposed about the cover plate 152. In other embodiments, edge ring 180 is disposed over substrate assembly 104. The method continues by flowing a process gas mixture near the top of the substrate 154 and near the bevel edge. The process gas may be any number of etchant gases. The process gas etches the bevel edge. The process gas may include nitrogen (N)2) Oxygen (O)2) Nitrogen trifluoride (NF)3) Argon, helium or any of themOne or more of which combinations. The method further includes flowing a purge gas through the three openings 202 of the mask 150 around the center of the substrate 154.
By flowing the etchant gas at the first location and flowing the purge gas at the second location, a more uniform and controlled etch may be achieved. Additionally, the various openings in the mask create small flow chokes and ensure that the purge gas is distributed evenly in all directions. Finally, the scalloped cover plate may provide stability during substrate placement and pick-up.
Fig. 5 depicts a schematic cross-sectional view of a process chamber 500 containing a heater support kit 501 according to one or more embodiments described and discussed herein. The process chamber 500 may have the same components and/or configurations as the process chamber 100 described and discussed above. Alternatively, the process kit or components in the process chamber 100 may be replaced with the heater support kit 501 and/or components or parts thereof. The process chamber 500 also includes a chamber body 502 and a chamber lid 504.
In one or more embodiments, the heater support kit 501 includes a snap ring 520, a heater assembly 530, a heater arm assembly 540, a heater support plate 560, a lower support plate 580, and a center plug 590, as shown in fig. 5.
In accordance with one or more embodiments described and discussed herein, fig. 6 depicts a schematic top view of the heater support kit 501, and fig. 7 depicts a schematic exploded view of the heater support kit 501. In some embodiments, the heater assembly 530 has a heater plate 532 having an upper surface 531 and a lower surface 533, and the snap ring 520 is disposed on at least a portion of the upper surface 531 of the heater plate 532. The heater arm assembly 540 contains the heater arm 542 and supports the heater assembly 530. The heater arm assembly 540 also contains a heater cooling shaft 544 coupled to the lower surface of the heater arm 542. The heater support plate 560 is disposed between the heater plate 532 and the heater arm 542, and is in contact with at least a portion of a lower surface 533 of the heater plate 532.
The heater support kit 501 includes a lower support plate 580 disposed below the heater support plate 560. The heater support kit 501 includes a center plug 590 disposed below the lower support plate 580. The center plug 590 may be coupled or attached to the chamber body 502. The lower support plate 580 comprises or includes one or more materials such as steel, stainless steel, iron, chromium, nickel, aluminum, alloys thereof, or any combination thereof. The heater support kit 501 further includes a pumping plate 510 coupled to a heater arm assembly 540, as shown in FIG. 7.
In other embodiments, the heater support kit 501 includes: a heater assembly 530, the heater assembly 530 having a heater plate 532 having an upper surface 531 and a lower surface 533; a snap ring 520, the snap ring 520 being disposed on at least a portion of the upper surface 531 of the heater plate 532; a heater arm assembly 540, the heater arm assembly 540 containing a heater arm 542 and supporting the heater assembly 530; and a heater support plate 560, the heater support plate 560 being disposed between the heater plate 532 and the heater arm 542, and being in contact with at least a portion of a lower surface 533 of the heater plate 532. The heater support kit 501 further includes a lower support plate 580 disposed below the heater support plate 560 and a center plug 590 disposed below the lower support plate 580.
Fig. 8 depicts a schematic cross-sectional view of a process chamber 800 containing a heater support kit 801 according to one or more embodiments described and discussed herein. The process chamber 800 may have the same components and/or configurations as the process chamber 100 described and discussed above. Alternatively, the process kit or components in the process chamber 100 may be replaced with the heater support kit 801 and/or components or parts thereof. The processing chamber also includes a chamber body 802 and a chamber lid 804.
In one or more embodiments, the heater support kit 801 includes a snap ring 520, a heater assembly 530, a heater arm assembly 840, a heater support plate 560, and a center plug 890, as shown in FIG. 8. Fig. 9 depicts a schematic exploded view of a heater support kit 801 according to one or more embodiments described and discussed herein.
In other embodiments, the heater support assembly 801 further comprises a center plug 890 disposed below the heater support plate 560. The center plug 890 may be coupled or attached to the chamber body 802. The heater support assembly 801 further includes a pumping plate 810 coupled to a heater arm assembly 840, as shown in FIG. 9. The heater arm assembly 840 contains a cleat assembly 845 and a heater cooling shaft 544. Cleat assembly 845 may include cleats 846 and a mandrel 847. The cleats 846 may rotate about the mandrel 847 and may engage and disengage the mandrel 847 while reducing or eliminating any spaces or gaps between the chamber components (e.g., the chamber body 802 and/or the chamber cover 804) and/or the cleats 846.
In some embodiments, the heater support assembly 801 comprises: a heater assembly 530, the heater assembly 530 having a heater plate 532 having an upper surface 531 and a lower surface 533; a snap ring 520, the snap ring 520 being disposed on at least a portion of an upper surface of the heater plate 532; and a heater arm assembly 540, the heater arm assembly 540 containing a heater arm 542 and supporting the heater assembly 530. The heater support assembly 801 further includes: a heater support plate 560, the heater support plate 560 being disposed between the heater plate 532 and the heater arm 542, and being in contact with at least a portion of a lower surface of the heater plate 532; and a center plug 890, the center plug 890 being disposed below the heater plate 560.
Fig. 10 depicts a schematic cross-sectional view of an attachment assembly 535 in accordance with one or more embodiments described and discussed herein. An attachment assembly 535 may be contained and used on either of the heater support kits 501, 801. Attachment assembly 535 includes an attachment assembly 535 that couples together heater plate 532 and center plugs 590, 890. The attachment assembly 535 contains a clamping plug 534, one or more fasteners 536, and one or more actuators 538. In some examples, the attachment assembly 535 contains two or more fasteners 536 and two or more actuators 538. The fasteners 536 may be or include bolts, screws, or the like. The actuator 538 contains one or more springs. In some examples, the actuation device 538 is one or more wave springs. When the heater support kits 501, 801 are assembled, one or more actuators 538 may be used to generate a load for controlling the preload force.
In accordance with one or more embodiments described and discussed herein, fig. 11 depicts a schematic top view of the heater assembly 530, and fig. 12 depicts a schematic perspective view of the heater assembly 530. The heater plate 531 may include a groove 537 around an outer portion of the heater plate 531. As shown, the snap ring 520 may be positioned on the groove 537. The heater plate 531 may comprise one or more materials, such as aluminum, aluminum alloys, titanium, steel, stainless steel, alloys thereof, or any combination thereof.
Fig. 13A-13C depict schematic views of cleat assembly 545 according to one or more embodiments described and discussed herein. Cleat assembly 545 contains a cleat 546 coupled to upper surface 541 of heater arm 542. In some embodiments, cleat assembly 545 includes one or more fasteners 548. Each of the fasteners 548 may independently be or include a bolt or screw. In some examples, each of the fasteners 548 may be a set screw, a locking set screw, a guide screw, a shoulder screw, or the like. In one or more embodiments, the cleat assembly 545 further includes a set screw, a shoulder screw, a bridging rod, and a locking set screw. For example, cleat assembly 545 may include two or more set screws and two or more shoulder screws.
Fig. 14A-14C depict schematic views of a heater support plate 560 according to one or more embodiments described and discussed herein. The heater supporting plate 560 has an upper surface 561 and a lower surface 563 as shown in fig. 14A and 14C, respectively. Fig. 14B depicts a cross-sectional view of the heater support plate 560. The heater support plate 560 is a ring and has an aperture or hole 562 extending through the heater support plate 560 between the upper surface 561 and the lower surface 563. One or more raised features 562 extend from the lower surface 563 and are disposed around the outer edge of the heater support plate 560.
The heater support plate 560 provides physical support on the outer edge of the heater plate 532. The attachment assembly 535 provides an axial force downward on the heater plate 532, and the heater support plate 560 maintains the heater plate 532 from bending or deforming under the axial force. The heater support plate 560 contains one or more materials such as quartz, silica or silicon dioxide, alumina or aluminum oxide, aluminum nitride, aluminum oxynitride, yttrium oxide or yttrium oxide, one or more metals, silicates thereof, ceramics thereof, or any combination thereof. Exemplary metals contained in the heater support plate 560 may be or include steel, stainless steel, iron, chromium, nickel, aluminum, alloys thereof, or any combination thereof.
Fig. 15A-15B depict schematic views of a lower support plate 580 according to one or more embodiments described and discussed herein. The lower support plate 580 has an upper surface 581 and a lower surface 583, as shown in fig. 15A and 15B, respectively. The lower support plate 580 may comprise one or more materials such as steel, stainless steel, iron, chromium, nickel, aluminum, alloys thereof, or any combination thereof.
In one or more embodiments, a support structure for the heater is helpful in a bevel etch chamber. When the heater is operated at higher temperatures and spacing requirements are stringent (+/-several mils), the heater surface may be supported by the heater support plate. A gas purge flow through the center of the mask, and O2/N2The free radical flow is at the wafer bevel surface. The operating pitch condition between the wafer and the mask is at a distance of about 5 mils to about 20 mils, but the pitch tolerance is ± about 1 mil. In some examples, if the spacing is not maintained, an impact on bevel etch performance and chamber throughput may result. The heater support plate helps maintain the desired spacing.
Since the etching occurs on the wafer bevel surface, the support structure is more robust at the heater edge, as shown. Therefore, a heater support plate is used below the heater edge surface. In some examples, the heater support plate contains a material that can operate at high temperatures without deformation, such as quartz, steel or other metals, AlOx, AlN or combinations thereof. In some configurations, the heater support plate is used to support the heater surface and may also provide a uniform pumping channel below the heater surface. The heater is spring loaded in the center.
The heater support plate provides robustness to make bevel etch performance more uniform and does not allow any heater deformation/creep to occur as the wafer cycles.
The heater support plate may be of any geometric design below the heater. The heater support plate may be bonded or clamped or placed just below the heater surface. The heater support plate may be uniform on the edge or on the heater structure or only in the center.
Embodiments of the present disclosure further relate to any one or more of paragraphs 1 to 18 below:
1. a heater support kit comprising: a heater assembly having a heater plate with an upper surface and a lower surface; a snap ring disposed on at least a portion of the upper surface of the heater plate; a heater arm assembly including a heater arm and supporting the heater assembly; and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
2. A heater support kit comprising: a heater assembly having a heater plate with an upper surface and a lower surface; a snap ring disposed on at least a portion of the upper surface of the heater plate; a heater arm assembly including a heater arm and supporting the heater assembly; a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate; a lower support plate disposed below the heater support plate; and a center plug disposed below the lower support plate.
3. A heater support kit comprising: a heater assembly having a heater plate with an upper surface and a lower surface; a snap ring disposed on at least a portion of the upper surface of the heater plate; a heater arm assembly including a heater arm and supporting the heater assembly; a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate; and a center plug disposed below the heater support plate.
4. A heater support kit according to any of paragraphs 1 to 3, further comprising a lower support plate disposed below the heater support plate.
5. The heater support kit of any of paragraphs 1 to 4, further comprising a center plug disposed below the lower support plate.
6. The heater support kit of any of paragraphs 1 to 5, wherein the lower support plate comprises steel, stainless steel, iron, chromium, nickel, aluminum, alloys thereof, or any combination thereof.
7. The heater support kit of any of paragraphs 1 to 6, further comprising a center plug disposed below the heater support plate.
8. The heater support kit of any of paragraphs 1 to 7, further comprising an attachment assembly coupling the heater plate and the center plug together.
9. The heater support kit of any of paragraphs 1 to 8, wherein the attachment assembly comprises a clamping plug, a fastener and an actuating device.
10. The heater support kit of any of paragraphs 1 to 9, wherein the attachment assembly comprises two or more fasteners and two or more actuating devices.
11. A heater support kit according to any of paragraphs 1 to 10, wherein the fastener comprises a bolt or screw and the actuating means comprises a spring.
12. A heater support kit according to any of paragraphs 1 to 11, wherein the spring is a wave spring.
13. The heater support kit according to any of paragraphs 1 to 12, wherein the heater arm assembly further comprises a cleat coupled to an upper surface of the heater arm.
14. The heater support kit of any of paragraphs 1 to 13 wherein the non-slip stud further comprises a set screw, a shoulder screw, a bridging rod and a locking set screw.
15. The heater support kit of any of paragraphs 1 to 14, wherein the non-slip spike further comprises two or more set screws and two or more shoulder screws.
16. A heater support kit according to any of paragraphs 1 to 15, wherein the heater arm assembly further comprises a heater cooling shaft coupled to a lower surface of the heater arm.
17. A heater support kit according to any of paragraphs 1 to 16, further comprising a pumping plate coupled to the heater arm assembly.
18. A heater support kit according to any of paragraphs 1 to 17, wherein the heater support plate comprises quartz, silica, alumina, aluminum oxide, aluminum nitride, aluminum oxynitride, yttrium oxide, a metal, a silicate thereof, a ceramic thereof, or any combination thereof.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. All documents described herein are incorporated by reference herein, including any priority documents and/or test procedures not inconsistent with this document. It will be apparent from the foregoing general description and specific examples that, while forms of the disclosure have been illustrated and described, various modifications can be made without departing from the spirit and scope of the disclosure. Accordingly, the disclosure is not intended to be limited thereby. Likewise, for purposes of united states law, the term "comprising" is considered synonymous with the term "including". Likewise, whenever a composition, element, or group of elements is preceded by the transition phrase "comprising," it should be understood that the same composition or group of elements is also contemplated to be preceded by the transition phrase "consisting essentially of … …," "consisting of … …," "selected from the group consisting of … …," or "is," to state the composition, element, or elements, and vice versa.
Certain embodiments and features have been described using a set of numerical upper limits and a set of numerical lower limits. It should be understood that ranges including any combination of two values, e.g., any lower value with any upper value, any combination of two lower values, and/or any combination of two upper values, are contemplated unless otherwise indicated. Certain lower limits, upper limits and ranges appear in one or more of the appended claims.

Claims (15)

1. A heater support kit comprising:
a heater assembly comprising a heater plate having an upper surface and a lower surface;
a snap ring disposed on at least a portion of the upper surface of the heater plate;
a heater arm assembly including a heater arm and supporting the heater assembly; and
a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
2. The heater support kit of claim 1, further comprising a lower support plate disposed below the heater support plate, and wherein the lower support plate comprises steel, stainless steel, iron, chromium, nickel, aluminum, alloys thereof, or any combination thereof.
3. The heater support kit of claim 2, further comprising a center plug disposed below the lower support plate.
4. The heater support kit of claim 1, further comprising an attachment assembly coupling the heater plate and center plug together.
5. The heater support kit of claim 4, wherein the attachment assembly comprises a clamp plug, a fastener, and an actuating device.
6. The heater support kit of claim 5, wherein the attachment assembly comprises two or more fasteners and two or more actuating devices.
7. The heater support kit of claim 5, wherein the fastener comprises a bolt or screw and the actuating means comprises a spring.
8. The heater support kit of claim 1 wherein the heater arm assembly further comprises a cleat coupled to an upper surface of the heater arm.
9. The heater support kit of claim 8 wherein the non-slip nail further comprises a set screw, a shoulder screw, a bridging rod and a locking set screw.
10. The heater support kit of claim 9, wherein the non-slip nail further comprises two or more set screws and two or more shoulder screws.
11. The heater support kit of claim 1, wherein the heater arm assembly further comprises a heater cooling shaft coupled to a lower surface of the heater arm.
12. The heater support kit of claim 1, further comprising a pumping plate coupled to the heater arm assembly.
13. The heater support kit of claim 1, wherein the heater support plate comprises quartz, silica, alumina, aluminum oxide, aluminum nitride, aluminum oxynitride, yttrium oxide, a metal, a silicate thereof, a ceramic thereof, or any combination thereof.
14. A heater support kit comprising:
a heater assembly comprising a heater plate having an upper surface and a lower surface;
a snap ring disposed on at least a portion of the upper surface of the heater plate;
a heater arm assembly including a heater arm and supporting the heater assembly;
a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate;
a lower support plate disposed below the heater support plate; and
a center plug disposed below the lower support plate.
15. A heater support kit comprising:
a heater assembly comprising a heater plate having an upper surface and a lower surface;
a snap ring disposed on at least a portion of the upper surface of the heater plate;
a heater arm assembly including a heater arm and supporting the heater assembly;
a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate; and
a center plug disposed below the heater support plate.
CN202080044306.0A 2019-05-22 2020-02-21 Heater support kit for bevel etch chamber Pending CN114026673A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/419,813 US10903066B2 (en) 2017-05-08 2019-05-22 Heater support kit for bevel etch chamber
US16/419,813 2019-05-22
PCT/US2020/019150 WO2020236235A1 (en) 2019-05-22 2020-02-21 Heater support kit for bevel etch chamber

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KR (1) KR20210158409A (en)
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US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
KR20060118970A (en) * 2005-05-18 2006-11-24 삼성전자주식회사 Chuck heater plate structure for use in semiconductor device fabricating equipment
US8274017B2 (en) * 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
JP6104823B2 (en) * 2011-03-01 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Thin heating substrate support
US10903066B2 (en) * 2017-05-08 2021-01-26 Applied Materials, Inc. Heater support kit for bevel etch chamber

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