CN114024461A - Inverter circuit based on semiconductor circuit and motor controller - Google Patents
Inverter circuit based on semiconductor circuit and motor controller Download PDFInfo
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- CN114024461A CN114024461A CN202111245153.9A CN202111245153A CN114024461A CN 114024461 A CN114024461 A CN 114024461A CN 202111245153 A CN202111245153 A CN 202111245153A CN 114024461 A CN114024461 A CN 114024461A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000005070 sampling Methods 0.000 claims abstract description 96
- 238000004804 winding Methods 0.000 claims description 7
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 101100247626 Drosophila melanogaster Rtc1 gene Proteins 0.000 description 6
- 101100247627 Homo sapiens RCL1 gene Proteins 0.000 description 6
- 102100027566 RNA 3'-terminal phosphate cyclase-like protein Human genes 0.000 description 6
- 101100488920 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RTC2 gene Proteins 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 101000699762 Homo sapiens RNA 3'-terminal phosphate cyclase Proteins 0.000 description 5
- 102100029143 RNA 3'-terminal phosphate cyclase Human genes 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53873—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with digital control
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/32—Compensating for temperature change
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P25/00—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details
- H02P25/16—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details characterised by the circuit arrangement or by the kind of wiring
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
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Abstract
The invention relates to an inverter circuit and a motor controller of a semiconductor circuit, wherein the inverter circuit comprises the semiconductor circuit and a sampling circuit, one end of the sampling circuit is connected with the output end of a lower bridge arm switching tube of the semiconductor circuit, the other end of the sampling circuit is grounded, and the resistance value of the sampling circuit and the ambient temperature are changed in a positive direction. Therefore, the purpose of adjusting the sampling current value according to the ambient temperature is achieved, the problems caused by the fact that the semiconductor circuit and the load work when the ambient temperature is too high or too low in the prior art are solved, the working reliability of the whole inverter circuit and the load is effectively improved, the service life of the inverter circuit is prolonged, and the working efficiency of the inverter circuit is improved.
Description
Technical Field
The invention relates to an inverter circuit and a motor controller based on a semiconductor circuit, and belongs to the technical field of semiconductor circuit application.
Background
A semiconductor circuit is a power-driven type product that combines power electronics and integrated circuit technology. The outer surface of a semiconductor circuit is generally encapsulated with a resin material formed by injection molding to form a sealing layer, and the circuit board and the electronic components inside are sealed, and the leads protrude from one side or both sides of the sealing layer. The inverter circuit based on the semiconductor circuit is used for driving loads such as a motor and the like, and the circuit comprises the semiconductor circuit, an MCU, a bootstrap capacitor, a bus capacitor, a sampling resistor and other electronic components. The sampling resistor is mainly used for current sampling, a current signal is converted into a voltage signal, and the voltage signal is fed back to an overcurrent protection end of the semiconductor circuit through voltage division. The overcurrent protection end can be compared with a certain voltage after receiving a voltage signal, when the current is increased, the voltage of the sampling resistor is increased, and when the voltage of the sampling resistor is greater than the comparison voltage, the overcurrent protection in the semiconductor circuit can act. The voltage signal collected by the sampling resistor also contains the information of the rotation of the motor, and the voltage signal is sent back to an operational amplifier (OPA) in the MCU for amplification and then is subjected to analog-to-digital conversion (ADC) to be converted into a digital signal for operation. The existing sample resistor cannot be self-adjusted according to the temperature, so that the sample resistor cannot be protected at a high temperature to cause failure of the semiconductor circuit, the sample resistor can malfunction at a low temperature, and the semiconductor circuit can bear large current under the condition of low temperature, but the sample resistor is actually protected, so that the purpose of real current protection cannot be achieved. Therefore, the sampling circuit of the existing inverter circuit needs to be improved.
Disclosure of Invention
The invention aims to solve the technical problem caused by inaccurate sampling value due to temperature change such as high temperature or low temperature in the process of using the sampling circuit in the inverter circuit based on the semiconductor circuit.
The invention discloses an inverter circuit based on a semiconductor circuit, which comprises the semiconductor circuit and a sampling circuit, wherein one end of the sampling circuit is connected with the output end of a lower bridge arm switching tube of the semiconductor circuit, the other end of the sampling circuit is grounded, and the resistance value of the sampling circuit and the ambient temperature are changed in a positive direction.
Optionally, the sampling circuit includes a sampling resistor and a temperature adjustment module connected in parallel with the sampling resistor, and a resistance value of the temperature adjustment module and the ambient temperature change in a positive direction.
Optionally, the temperature adjusting module is one or more temperature adjusting units connected in parallel, and the resistance value of the temperature adjusting unit and the ambient temperature are changed in a positive direction.
Optionally, the temperature adjustment unit comprises a PTC resistor.
Optionally, the temperature adjustment unit includes a first NMOS transistor, a first resistor, and an NTC resistor;
the drain of the first NMOS transistor and one end of the first resistor are connected to one end of the temperature adjustment unit, the other end of the first resistor and one end of the NTC resistor are connected to the gate of the first NMOS transistor, and the other end of the NTC resistor and the source of the first NMOS transistor are connected to the other end of the temperature adjustment unit.
Alternatively, when the temperature adjustment unit is plural, the resistance value of each first resistor is different.
Optionally, the temperature adjustment unit includes a second NMOS transistor, a current source, and a diode;
the drain electrode of the second NMOS tube and one end of the current source are connected to one end of the temperature adjusting unit, the other end of the temperature adjusting unit and the anode of the diode are connected to the grid electrode of the second NMOS tube, and the cathode of the diode and the source electrode of the second NMOS tube are connected to the other end of the temperature adjusting unit.
Alternatively, when the temperature adjustment unit is plural, the output current value of each current source is different.
The invention also provides a motor controller, which comprises an MCU and the inverter circuit as claimed in any one of claims 1 to 8, wherein a control pin of the MCU is connected with a control input end of the inverter circuit, and an output end of a three-phase upper bridge arm switching tube of the semiconductor circuit is an output end of the electrolysis controller to be respectively connected with a three-phase winding of the motor.
The invention relates to an inverter circuit based on a semiconductor circuit, which comprises the semiconductor circuit and a sampling circuit, wherein one end of the sampling circuit is connected with the output end of a lower bridge arm switching tube of the semiconductor circuit, the other end of the sampling circuit is grounded, and the resistance value of the sampling circuit and the ambient temperature are changed in a positive direction. Therefore, the purpose of adjusting the sampling current value according to the ambient temperature is achieved, the problems caused by the fact that the semiconductor circuit and the load work when the ambient temperature is too high or too low in the prior art are solved, the working reliability of the whole inverter circuit and the load is effectively improved, the service life of the inverter circuit is prolonged, and the working efficiency of the inverter circuit is improved.
Drawings
FIG. 1 is a simplified circuit schematic of an inverter circuit according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of the temperature adjustment unit of FIG. 1;
FIG. 3 is another circuit diagram of the temperature adjustment unit of FIG. 1;
fig. 4 is a further circuit diagram of the temperature adjustment unit of fig. 1.
Detailed Description
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.
The semiconductor circuit provided by the invention is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc.
The invention firstly provides an inverter circuit based on a semiconductor circuit. As shown in fig. 1, the inverter circuit 20 includes a semiconductor circuit 21 and a sampling circuit 22, one end of the sampling circuit 22 is connected to the output end of the lower arm switching tube of the semiconductor circuit 21, the other end of the sampling circuit 22 is grounded, and the resistance value of the sampling circuit 22 and the ambient temperature change in the positive direction. The sampling circuit 22 is used for sampling the working current of the semiconductor circuit 21 driving load. If the load is taken as the motor 30, the three-phase current values of the three-phase windings of the motor 30 are connected to the output end of the semiconductor circuit 21, and the sampling circuit 22 is connected in series between the output ends of the three-way lower-arm switching tubes of the semiconductor circuit 21 and the ground. The sampling circuit 22 and the output ends of the three lower bridge arm switching tubes are connected in two ways, one is the circuit shown in fig. 1, the output ends of the three lower bridge arm switching tubes are connected in parallel and then connected with the sampling circuit 22, and the sampling circuit 22 samples the total current of the three-phase winding working by the motor 30; in another example, the multi-path sampling circuit 22, such as the three-path sampling circuit 22, is respectively connected in series between the output end of the three-path lower bridge arm switching tube and the ground, so that each path of sampling circuit 22 samples the phase current of one path of winding. The embodiment of the invention is explained by taking the circuit sampling circuit shown in fig. 1 as an example for sampling the total current of the three-phase winding. Because the temperature that the power switch tube in the semiconductor circuit 21 can bear is certain, for example, the maximum temperature that each junction in the IGBT tube can bear is generally 175 ℃, under the environment of a rated temperature such as 25 ℃, the maximum current that it can pass is 10A so that the temperature in the IGBT tube does not exceed 175 ℃, therefore, under the environment of the rated temperature, the protection current value of the IGBT tube is 10A, along with the change of the environmental temperature, when the environmental temperature rises, the junction temperature of the IGBT tube reaches 175 ℃ by the maximum current that the IGBT tube passes being lower than 10A, so the protection current value is lower than 10A at this time, otherwise, the temperature rise in the IGBT tube exceeds the maximum temperature and is damaged; on the contrary, when the ambient temperature is reduced, the junction temperature of the IGBT tube can reach 175 ℃ only when the maximum current is larger than 10A, so that the protection current value can be larger than 10A at the moment without influencing the service life of the IGBT tube. For the above reasons, if the same protection current value is used for protection at different environmental temperatures, the device may be damaged due to over-protection or may not exert its working efficiency due to premature protection. For example, when the temperature is too high, the current value borne by the semiconductor circuit 21 and the load is reduced relative to the standard current value, and if the sampling protection is still performed according to the standard current value, the temperature borne by the semiconductor circuit 21 and the load is too high, and the working life of the semiconductor circuit 21 and the load is affected even the semiconductor circuit is damaged due to long-time working.
The sampling circuit 22 of the present invention is designed to make the resistance value of the sampling circuit 22 and the ambient temperature change in a positive direction, that is, the higher the ambient temperature is, the larger the resistance value is, the lower the ambient temperature is, the lower the resistance value is, so that the higher the ambient temperature is, the higher the sampling voltage of the sampling circuit 22 is, and the lower the ambient temperature is, the higher the final sampling current is, and the lower the sampling voltage of the sampling circuit 22 is, so that the final sampling current is reduced, thereby achieving the purpose of adjusting the sampling current value according to the ambient temperature, avoiding the problems caused by the operation of the semiconductor circuit 21 and the load when the ambient temperature is too high or too low in the prior art, effectively improving the operational reliability of the whole inverter circuit 20 and the load, prolonging the service life thereof, and improving the operating efficiency thereof.
In some embodiments of the present invention, as shown in fig. 1, the sampling circuit 22 includes a sampling resistor RS and a temperature adjustment module 221 connected in parallel with the sampling resistor RS, and the resistance value of the temperature adjustment module 221 and the ambient temperature change in a positive direction. The sampling resistor RS is a resistor used for current sampling in the prior art, and generally has a small resistance value within 1 ohm, the temperature adjustment module 221 and the sampling resistor RS are connected in parallel to determine a total sampling resistor RS value of the sampling circuit 22, and the resistance value of the temperature adjustment module 221 changes in a forward direction along with the ambient temperature, so that the final sampling resistor RS value also changes in the forward direction along with the ambient temperature, and the forward change of the resistance value of the sampling circuit 22 and the ambient temperature is realized.
Specifically, in some embodiments of the present invention, the temperature adjusting module 221 is one or more temperature adjusting units 221 connected in parallel, and the resistance value of the temperature adjusting unit 221 and the ambient temperature are changed in a positive direction. Through one or more temperature adjusting units 221 connected in parallel, the resistance value of each temperature adjusting unit 221 changes in the positive direction along with the ambient temperature, so that the resistance value of the total temperature adjusting module 221 changes in the positive direction along with the ambient temperature.
As an implementation manner of the temperature adjustment unit 221, as shown in fig. 2, the temperature adjustment unit 221 is a PTC resistor RTC 1. The resistance value of the PTC resistor RTC1 at normal temperature, for example, the resistance value at 25 ℃ and the resistance value of the sampling resistor RS are in the same order of magnitude or one order of magnitude higher, for example, when the sampling resistor RS is 100m Ω, the resistance value of the PTC resistor RTC1 at normal temperature can be selected as a parameter of 200m Ω, so that when the value of the PTC resistor RTC1 changes along with the ambient temperature in the forward direction, the resistance value of the PTC resistor RTC1 connected in parallel with the sampling resistor RS changes obviously relative to the resistance value of the sampling resistor RS. Because the resistance of the single PTC resistor RTC1 is large, the resistance of the parallel connection of the plurality of PTC resistors can be in the same order of magnitude as the resistance of the sampling resistor RS in a sampling electronic parallel connection mode, so that the resistance of the parallel connection of the plurality of PTC resistors is obviously changed along with the ambient temperature relative to the resistance of the sampling resistor RS, and the effect of regulating the protection current is achieved.
As another implementation manner of the temperature adjustment unit 221, as shown in fig. 3, the temperature adjustment unit 221 includes a first NMOS transistor Q1, a first resistor R1, and an NTC resistor RTC 2; the drain of the first NMOS transistor Q1 and one end of the first resistor R1 are commonly connected to one end of the temperature adjustment unit 221, the other end of the first resistor R1 and one end of the NTC resistor RTC2 are commonly connected to the gate of the first NMOS transistor Q1, and the other end of the NTC resistor RTC2 and the source of the first NMOS transistor Q1 are commonly connected to the other end of the temperature adjustment unit 221. The first NMOS transistor Q1 is preferably a low-voltage conduction NMOS transistor, and its on-resistance is only a few hundred m Ω, which is equivalent to the resistance of the sampling resistor RS. When the first NMOS transistor is turned on, the resistance of the temperature adjustment unit is mainly the on-resistance of the first NMOS transistor, which is very low by several hundred mq, and when the first NMOS transistor is turned off, the resistance of the temperature adjustment unit is mainly the series resistance of the first resistor R1 and the NTC resistor RTC2, which is relatively large.
The gate of the first NMOS transistor Q1 is controlled by a voltage divider circuit, which is connected to the power supply terminal by a conventional first resistor R1 and to the ground terminal by an NTC resistor RTC 2. The first NMOS transistor Q1 is turned on at normal temperature, when the temperature rises, the resistance of the NTC resistor RTC2 decreases, the voltage value across the NTC resistor RTC2 and the first resistor R1 after voltage division decreases, so the gate voltage decreases, the internal resistance of the first NMOS transistor Q1 increases, and when the temperature continues to rise, so that the voltage across the NTC resistor RTC2 is lower than the turn-on threshold voltage of the first NMOS transistor Q1, the first NMOS transistor Q1 turns off, so that the resistance of the temperature adjustment unit 221 increases, so that the total resistance of the temperature adjustment unit 221 and the sampling resistor RS after being connected in parallel increases, and the protection current is adjusted. Further, as shown in fig. 1 and 3, the temperature adjustment unit 221 may be multiple, that is, the sampling circuit 22 is formed by parallel connection of the sampling resistor RS and the temperature adjustment unit 221 of the same circuit, so that the resistance value of the sampling circuit 22 is the total resistance formed by parallel connection, and the resistance value of the first resistor R1 of each temperature adjustment unit 221 may be set to be different, so that the corresponding temperature is different when each first NMOS transistor Q1 is turned off. For example, by reasonably setting the resistance value of each different first resistor R1, when the temperature gradually rises, more and more first NMOS transistors Q1 are correspondingly turned off, so that the total resistance after parallel connection gradually increases, thereby realizing the function of adjusting the protection current along with the temperature change.
As still another implementation manner of the temperature adjustment unit 221, as shown in fig. 4, the temperature adjustment unit 221 includes a second NMOS transistor Q2, a current source i1, and a diode D1; the drain of the second NMOS transistor Q2 and one end of the current source i1 are commonly connected to one end of the temperature adjustment unit 221, the other end of the temperature adjustment unit 221 and the anode of the diode D1 are commonly connected to the gate of the second NMOS transistor Q2, and the cathode of the diode D1 and the source of the second NMOS transistor Q2 are commonly connected to the other end of the temperature adjustment unit 221. Wherein the forward conduction voltage of the diode D1 follows the temperature reverse variation, i.e. the temperature rises and the conduction voltage decreases. The second NMOS transistor Q2 is similar to the second NMOS transistor Q2 in the above embodiment, and preferably uses a low voltage conduction type NMOS transistor, whose on resistance is only a few hundred m Ω, and is equivalent to the resistance of the sampling resistor RS. The current source i1 generally adopts a constant current source circuit in the prior art, and the output current value thereof is constant, so that when the temperature value is constant, the conduction voltage at both ends of the diode D1 is constant, but when the ambient temperature changes, the conduction voltage of the diode D1 changes, specifically, the forward conduction voltage of the diode D1 changes along with the temperature in the reverse direction, when the conduction voltage of the diode D1 decreases, the internal resistance of the second NMOS tube Q2 increases, and therefore, the gate voltage decreases, the internal resistance of the second NMOS tube Q2 increases, and when the temperature continues to increase, so that the conduction voltage of the diode D1 is lower than the conduction threshold voltage of the second NMOS tube Q2, the second NMOS tube Q2 closes, so that the resistance of the temperature adjustment unit 221 increases, so that the total resistance value of the temperature adjustment unit 221 and the sampling resistor RS after being connected in parallel increases, thereby playing a role of adjusting the protection current. Further, as shown in fig. 1 and 4, the temperature adjustment unit 221 may be multiple, that is, the sampling circuit 22 is formed by parallel connection of the sampling resistor RS and the temperature adjustment unit 221 of the same circuit, so that the resistance value of the sampling circuit 22 is the total resistance formed by parallel connection, and the current value of the output of the current source i1 of each temperature adjustment unit 221 may be set to be different, so as to make the corresponding temperature different when each second NMOS transistor Q2 is turned off. For example, by reasonably setting the output current value of each different current source i1, when the temperature gradually rises, the number of the second NMOS transistors Q2 which are correspondingly turned off increases, so that the total resistance after parallel connection gradually increases, thereby realizing the function of adjusting the protection current along with the temperature change.
The present invention further provides a motor 30 controller, as shown in fig. 1 to 4, where the motor 30 controller includes an MCU and the inverter circuit 20 mentioned in the above embodiments, where the MCU is connected to the semiconductor circuit 21 of the inverter circuit 20, so that the MCU outputs 6 control signals to control the switching tubes of the upper and lower arms of the inverter part in the semiconductor circuit 21 to work, and detects the protection signal of the semiconductor circuit 21, and outputs corresponding protection control when the protection signal is detected to be valid. Wherein the inverter circuit 20 further comprises a sampling circuit 22, the sampling circuit 22 is connected in series between the output ends of the three lower bridge arm switching tubes of the semiconductor circuit 21 and the ground to detect the total three-phase current output by the lower bridge arm switching tubes, wherein the adopted circuit specifically comprises a sampling resistor RS and a plurality of temperature adjusting units 221 connected in parallel, the voltage value on the sampling resistor RS and the plurality of temperature adjusting units 221 connected in parallel corresponds to the three-phase current value, the voltage value is isolated by a fifth resistor and then input to a sampling current input pin of the semiconductor circuit 21, so as to realize the sampling of the three-phase current, and the sampling voltage output pin of the inverter current of the semiconductor circuit 21 is connected to the MCU, so that the MCU obtains the sampling current of the semiconductor circuit 21 and outputs a control signal to control the three-phase output end of the semiconductor circuit 21 to output a variable-frequency driving signal to the three-phase winding of the motor 30, so that the rotation speed and torque of the motor 30 can be controlled to operate. Through setting up temperature adjustment unit 221, its resistance follows ambient temperature forward change, make the resistance of final sampling circuit 22's sampling resistor RS follow ambient temperature forward change, thereby make final protection current value can be according to the real-time adjustment that ambient temperature corresponds, the problem that semiconductor circuit 21 and load work brought when the ambient temperature among the above-mentioned prior art is too high or low excessively has been avoided, with the operational reliability of this effectual whole motor 30 controller of promotion, promote its working life, and promote its work efficiency.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (9)
1. The inverter circuit based on the semiconductor circuit is characterized by comprising the semiconductor circuit and a sampling circuit, wherein one end of the sampling circuit is connected with the output end of a lower bridge arm switching tube of the semiconductor circuit, the other end of the sampling circuit is grounded, and the resistance value of the sampling circuit and the ambient temperature of the sampling circuit are changed in a positive direction.
2. The inverter circuit according to claim 1, wherein the sampling circuit comprises a sampling resistor and a temperature adjustment module connected in parallel with the sampling resistor, and the resistance value of the temperature adjustment module and the ambient temperature are changed in a positive direction.
3. The inverter circuit according to claim 1, wherein the temperature adjusting module is one or more temperature adjusting units connected in parallel, and the resistance value of the temperature adjusting unit and the ambient temperature are changed in a positive direction.
4. The inverter circuit according to claim 3, wherein the temperature adjustment unit includes a PTC resistor.
5. The inverter circuit according to claim 3, wherein the temperature adjustment unit comprises a first NMOS transistor, a first resistor and an NTC resistor;
the drain electrode of the first NMOS tube and one end of the first resistor are connected to one end of the temperature adjusting unit, the other end of the first resistor and one end of the NTC resistor are connected to the grid electrode of the first NMOS tube, and the other end of the NTC resistor and the source electrode of the first NMOS tube are connected to the other end of the temperature adjusting unit.
6. The inverter circuit according to claim 5, wherein when the temperature adjustment unit is plural, each of the first resistors has a different resistance value.
7. The inverter circuit according to claim 3, wherein the temperature adjustment unit comprises a second NMOS transistor, a current source and a diode;
the drain electrode of the second NMOS tube and one end of the current source are connected to one end of the temperature adjusting unit, the other end of the temperature adjusting unit and the anode of the diode are connected to the grid electrode of the second NMOS tube, and the cathode of the diode and the source electrode of the second NMOS tube are connected to the other end of the temperature adjusting unit.
8. The inverter circuit according to claim 7, wherein when the temperature adjustment unit is plural, an output current value of each of the current sources is different.
9. A motor controller, characterized in that the motor controller comprises an MCU and the inverter circuit of any one of claims 1 to 8, wherein a control pin of the MCU is connected to a control input terminal of the inverter circuit, and output terminals of three-phase upper bridge arm switching tubes of the semiconductor circuit are output terminals of the electrolytic controller to be respectively connected to three-phase windings of the motor.
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