CN114023853A - LED and preparation method thereof - Google Patents
LED and preparation method thereof Download PDFInfo
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- CN114023853A CN114023853A CN202111305222.0A CN202111305222A CN114023853A CN 114023853 A CN114023853 A CN 114023853A CN 202111305222 A CN202111305222 A CN 202111305222A CN 114023853 A CN114023853 A CN 114023853A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000006911 nucleation Effects 0.000 claims abstract description 18
- 238000010899 nucleation Methods 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses an LED and a preparation method thereof. An LED includes a substrate, a high temperature nucleation layer, and a NGaN layer. And sequentially growing the high-temperature nucleating layer and the NGaN layer on the substrate. The NGaN layer directly grows on the high-temperature nucleating layer in the bottom layer structure of the LED, the film quality is obviously improved, and the doping of the bottom layer is increased, so that the voltage is reduced, and the luminous efficiency can be greatly improved.
Description
Technical Field
The invention relates to an LED and a preparation method thereof, in particular to an LED with high luminous efficiency and a preparation method thereof.
Background
With the gradual application of LEDs in the illumination field, the light efficiency of white LEDs is more and more required in the market, and the structure of the LED in the prior art is shown in fig. 1, where the LED includes a substrate 1, and a low-temperature nucleation layer 2, a UGaN layer 3, a NGaN layer 4, an MWQ layer 5, an EBL layer 6, a PGaN layer 7, and a P-type contact layer 8 which are sequentially grown on the substrate 1.
However, a low-temperature nucleation layer 2 grows on the substrate in an MOCVD mode, the temperature is below 600C, the thickness is less than 50nm, UGaN grows on the grown low-temperature buffer layer, the quality of the obtained growth bottom layer is poor, the voltage of the LED device is greatly influenced, and the light efficiency is further influenced.
Disclosure of Invention
The invention aims to improve the quality of the bottom layer structure of the LED so as to improve the lighting effect.
To achieve one of the above objects, the present invention provides an LED.
The above-mentioned LED includes:
a substrate; and a high-temperature nucleating layer and an NGaN layer which are sequentially grown on the substrate.
As an optional technical scheme, the high-temperature nucleating layer is a high-temperature GaN layer.
As an optional technical scheme, the growth temperature range of the high-temperature nucleation layer is 600-.
As an alternative solution, the thickness of the high-temperature nucleation layer is less than 50 nm.
As an optional technical scheme, the high-temperature nucleating layer is manufactured by using an MOCVD mode.
As an optional technical solution, the LED further includes an N-type metal contact layer, an MQW layer, an EBL layer, a PGaN layer, and a P-type contact layer, which are sequentially grown on the NGaN layer.
As an optional technical solution, the doping concentration of the NGaN layer is less than 5E +18, and the doping concentration of the N-type metal contact layer is greater than 5E + 18.
As an optional technical solution, the substrate is a PVD substrate or a silicon dioxide substrate.
The invention also provides a preparation method of the LED, which is characterized by comprising the following steps
Step S1: providing a substrate;
step S2: growing a high-temperature nucleating layer on the substrate, wherein the growth temperature is 600-;
step S3: sequentially growing an NGaN layer, an N-type metal contact layer doping and MQW layer on the grown high-temperature nucleating layer;
step S4: growing an EBL layer on the MQW layer;
step S5: growing a PGaN cap layer on the EBL layer;
step S6: a P-type contact layer is grown on the PGaN cap layer.
As an optional technical solution, in step S3, the doping concentration of the NGaN layer is less than 5E +18, and the doping concentration of the N-type metal contact layer is greater than 5E + 18.
As an alternative solution, in step S2, the growth method of the high-temperature nucleation layer is MOCVD.
Alternatively, in step S1, the substrate is a PVD substrate or a silicon dioxide substrate.
Compared with the prior art, the NGaN layer directly grows on the high-temperature nucleating layer in the bottom layer structure of the LED, the film quality is obviously improved, and the doping of the bottom layer is increased, so that the voltage is reduced, and the luminous efficiency can be greatly improved.
Drawings
FIG. 1 is a schematic diagram of a prior art LED;
FIG. 2 is a schematic diagram of one embodiment of an LED of the present invention;
fig. 3 is a flow chart of a method of making the LED of fig. 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the technical solutions of the present application will be clearly and completely described below with reference to the detailed description of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
For convenience in explanation, the description herein uses terms indicating relative spatial positions, such as "upper," "lower," "rear," "front," and the like, to describe one element or feature's relationship to another element or feature as illustrated in the figures. The term spatially relative position may encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "above" other elements or features would then be oriented "below" or "above" the other elements or features. Thus, the exemplary term "below" can encompass both a spatial orientation of below and above.
Fig. 2 is a schematic diagram of an LED according to an embodiment of the invention, and fig. 2 is shown.
The LED includes a substrate 10, and a high temperature nucleation layer 20 and a NGaN layer 30 sequentially grown on the substrate 10. I.e., the underlying structure of the LED, includes a high temperature nucleation layer 20 grown on a substrate 10 and a NGaN layer 30 grown directly on the high temperature nucleation layer 20.
The bottom layer structure has obviously improved film quality, and the doping of the bottom layer is increased, so that the voltage is reduced, and the luminous efficiency can be greatly improved.
Specifically, the high-temperature nucleation layer 20 is a high-temperature GaN layer, the growth temperature range is 600-.
In addition, the substrate 10 may be, for example, a PVD substrate or a silicon dioxide substrate, on which the high-temperature nucleation layer 20 may be grown well, and the application range is wider.
In this embodiment, the LED further includes an N-type metal contact layer 40, an MQW layer 50, an EBL layer 60, a PGaN layer 70, and a P-type contact layer 80 sequentially grown on the NGaN layer 30. And the doping concentration of the NGaN layer 30 is less than 5E +18 and the doping concentration of the N-type metal contact layer 40 is greater than 5E + 18.
As shown in FIG. 3, the invention also provides a preparation method of the LED, which comprises the following steps
Step S1: providing a substrate;
step S2: growing a high-temperature nucleating layer on the substrate, wherein the growth temperature is 600-;
step S3: sequentially growing an NGaN layer, an N-type metal contact layer doping and MQW layer on the grown high-temperature nucleating layer;
step S4: growing an EBL layer on the MQW layer;
step S5: growing a PGaN cap layer on the EBL layer;
step S6: a P-type contact layer is grown on the PGaN cap layer.
In step S3, the NGaN layer has a doping concentration less than 5E +18, and the N-type metal contact layer has a doping concentration greater than 5E + 18.
In step S2, the high temperature nucleation layer is grown by MOCVD.
In step S1, the substrate is a PVD substrate or a silicon dioxide substrate.
In summary, the NGaN layer is directly grown on the high-temperature nucleation layer in the bottom layer structure of the LED of the present invention, the film quality is significantly improved, and the doping of the bottom layer is increased, thereby reducing the voltage and greatly increasing the light emitting efficiency.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (12)
1. An LED, comprising
A substrate; and a high-temperature nucleating layer and an NGaN layer which are sequentially grown on the substrate.
2. The LED of claim 1, wherein the high temperature nucleation layer is a high temperature GaN layer.
3. The LED of claim 1 wherein the growth temperature of the high temperature nucleation layer is in the range of 600-.
4. The LED of claim 1, wherein the high temperature nucleation layer has a thickness of less than 50 nm.
5. The LED of claim 1, wherein the high temperature nucleation layer is fabricated using MOCVD.
6. The LED of claim 1, further comprising an N-type metal contact layer, an MQW layer, an EBL layer, a PGaN layer, a P-type contact layer sequentially grown on the NGaN layer.
7. The LED of claim 6, wherein the NGaN layer has a doping concentration less than 5E +18 and the N-type metal contact layer has a doping concentration greater than 5E + 18.
8. The LED of claim 1, wherein the substrate is a PVD substrate or a silicon dioxide substrate.
9. A preparation method of an LED is characterized by comprising
Step S1: providing a substrate;
step S2: growing a high-temperature nucleating layer on the substrate, wherein the growth temperature is 600-;
step S3: sequentially growing an NGaN layer, an N-type metal contact layer doping and MQW layer on the grown high-temperature nucleating layer;
step S4: growing an EBL layer on the MQW layer;
step S5: growing a PGaN cap layer on the EBL layer;
step S6: a P-type contact layer is grown on the PGaN cap layer.
10. The method of claim 9, wherein in step S3, the NGaN layer has a doping concentration less than 5E +18, and the N-type metal contact layer has a doping concentration greater than 5E + 18.
11. The method of claim 9 wherein the high temperature nucleation layer is grown by MOCVD in step S2.
12. The method of claim 9, wherein in step S1, the substrate is a PVD substrate or a silicon dioxide substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111305222.0A CN114023853A (en) | 2021-11-05 | 2021-11-05 | LED and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111305222.0A CN114023853A (en) | 2021-11-05 | 2021-11-05 | LED and preparation method thereof |
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| Publication Number | Publication Date |
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| CN114023853A true CN114023853A (en) | 2022-02-08 |
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| CN202111305222.0A Pending CN114023853A (en) | 2021-11-05 | 2021-11-05 | LED and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020084467A1 (en) * | 1997-09-30 | 2002-07-04 | Krames Michael R. | Nitride semiconductor device with reduced polarization fields |
| CN101635328A (en) * | 2008-07-21 | 2010-01-27 | 台湾积体电路制造股份有限公司 | Vertical iii-nitride light emitting diodes on patterned substrates with embedded bottom electrodes |
| CN108878606A (en) * | 2018-06-22 | 2018-11-23 | 西安电子科技大学 | Based on superlattice structure and the δ efficient LED adulterated and preparation method |
| CN111081834A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Novel method for growing GaN epitaxial layer on sapphire and GaN epitaxial layer |
-
2021
- 2021-11-05 CN CN202111305222.0A patent/CN114023853A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020084467A1 (en) * | 1997-09-30 | 2002-07-04 | Krames Michael R. | Nitride semiconductor device with reduced polarization fields |
| CN101635328A (en) * | 2008-07-21 | 2010-01-27 | 台湾积体电路制造股份有限公司 | Vertical iii-nitride light emitting diodes on patterned substrates with embedded bottom electrodes |
| CN108878606A (en) * | 2018-06-22 | 2018-11-23 | 西安电子科技大学 | Based on superlattice structure and the δ efficient LED adulterated and preparation method |
| CN111081834A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Novel method for growing GaN epitaxial layer on sapphire and GaN epitaxial layer |
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Application publication date: 20220208 |