CN114019702A - Hybrid modulator and preparation method thereof - Google Patents
Hybrid modulator and preparation method thereof Download PDFInfo
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- CN114019702A CN114019702A CN202111151650.2A CN202111151650A CN114019702A CN 114019702 A CN114019702 A CN 114019702A CN 202111151650 A CN202111151650 A CN 202111151650A CN 114019702 A CN114019702 A CN 114019702A
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- 238000002360 preparation method Methods 0.000 title abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 59
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 59
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 239000012212 insulator Substances 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 19
- 230000007547 defect Effects 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- -1 hydrogen ions Chemical class 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 17
- 239000002210 silicon-based material Substances 0.000 abstract description 6
- 238000011068 loading method Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 230000007704 transition Effects 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12178—Epitaxial growth
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12188—Ion implantation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application discloses a hybrid modulator and a preparation method thereof, wherein the hybrid modulator comprises a lithium niobate structure on an insulator, wherein the lithium niobate structure on the insulator comprises a silicon substrate layer, a silicon dioxide optical isolation layer and a lithium niobate thin film layer which are sequentially stacked; at least two electrode layers which are arranged at intervals are arranged on one side of the lithium niobate thin film layer away from the silicon dioxide light isolation layer; a silicon dioxide dielectric layer is arranged between the at least two electrode layers; a silicon nitride waveguide layer is arranged between the at least two silicon dioxide medium layers; the silicon nitride waveguide layer is provided with a silicon waveguide layer. Because the silicon nitride material is added between the silicon waveguide layer and the lithium niobate thin film layer as the transition waveguide, the hybrid modulator realizes the optical integration of the silicon material and the lithium niobate material. Meanwhile, the silicon nitride material is used as a loading strip waveguide, so that the lithium niobate material can be prevented from being etched in the preparation process of the hybrid modulator, and a passive device is easy to design.
Description
Technical Field
The application relates to the technical field of nano optics, in particular to a hybrid modulator and a preparation method thereof.
Background
The optical materials each have advantages and disadvantages. The silicon material is superior in device design and preparation cost, but does not have second-order nonlinearity and linear electro-optic effect; the lithium niobate material has excellent second-order nonlinear and linear electro-optic effects, and can make up for the defects of silicon materials in the two properties. The silicon material and the lithium niobate material are integrated, which is beneficial to preparing optical chips and devices with higher performance.
However, the chemical property of the lithium niobate material is very stable, and the waveguide is difficult to process by utilizing the traditional reactive etching process such as reactive ion etching and the like; the physical etching method adopting argon etching has the defects of large side wall inclination angle and difficult design of passive devices.
Disclosure of Invention
The application provides a hybrid modulator and a preparation method thereof, which can at least avoid the problem that a lithium niobate material is etched in the preparation process of the hybrid modulator.
An embodiment of the present invention provides a hybrid modulator, including:
the lithium niobate structure on the insulator comprises a silicon substrate layer, a silicon dioxide optical isolation layer and a lithium niobate thin film layer which are sequentially stacked;
at least two electrode layers which are arranged at intervals are arranged on one side of the lithium niobate thin film layer away from the silicon dioxide light isolation layer; a silicon dioxide dielectric layer is arranged between the at least two electrode layers; a silicon nitride waveguide layer is arranged between the at least two silicon dioxide medium layers;
the silicon nitride waveguide layer is provided with a silicon waveguide layer.
Optionally, the silicon waveguide layer includes a first silicon waveguide passive device; the first silicon waveguide passive device comprises a silicon power divider; the silicon nitride waveguide layer and the silicon power divider form a Mach-Zehnder interferometer structure.
Optionally, the silicon waveguide layer further includes a second silicon waveguide passive device; the second silicon waveguide passive device includes a combination of one or more of a multimode interference coupler, a directional coupler, a Y-splitter, a polarization rotator, a polarization rotating splitter, and an arrayed waveguide grating.
Optionally, the difference between the height of the silicon dioxide dielectric layer and the height of the silicon nitride waveguide layer is h, wherein h is more than or equal to 0 and less than 50 nanometers.
Optionally, the electrode layer structure comprises a coplanar electrode structure.
The embodiment of the invention provides a preparation method of a hybrid modulator, which comprises the following steps:
performing ion implantation on the silicon wafer to form a defect layer in the silicon wafer;
growing a silicon nitride layer with a specified thickness on the ion implantation surface of the silicon wafer, and etching the silicon nitride layer to form a silicon nitride waveguide layer;
growing a silicon dioxide dielectric layer on the ion implantation surface of the silicon wafer so that the silicon dioxide dielectric layer covers the silicon nitride waveguide layer;
carrying out wafer bonding on the silicon dioxide dielectric layer and a lithium niobate thin film layer in the lithium niobate structure on the insulator to obtain a first bonding structure; the lithium niobate structure on the insulator comprises a silicon substrate layer, a silicon dioxide optical isolation layer and a lithium niobate thin film layer;
annealing the first bonding structure to enable the silicon wafer to be stripped along the defect layer to obtain a second bonding structure;
etching the silicon wafer layer in the second bonding structure to form a silicon waveguide layer;
etching the silicon dioxide dielectric layer in the second bonding structure to form an electrode deposition through hole;
and depositing an electrode layer on the electrode deposition through hole to obtain the hybrid modulator.
Optionally, the ion implantation comprises implanting hydrogen ions and/or helium ions.
Optionally, after the silicon dioxide dielectric layer covers the silicon nitride waveguide layer, the silicon dioxide dielectric layer is planarized, and the height of the silicon dioxide dielectric layer on the silicon nitride waveguide layer is controlled to be less than 50 nanometers.
Optionally, wafer bonding is performed on the silicon dioxide dielectric layer and the lithium niobate thin film layer in the lithium niobate structure on the insulator, and the obtaining of the first bonding structure includes: polishing the silicon dioxide dielectric layer to obtain a polished silicon dioxide dielectric layer; carrying out wafer bonding on the polished silicon dioxide dielectric layer and a lithium niobate thin film layer in a lithium niobate structure on the insulator to obtain a first intermediate bonding structure; annealing the first intermediate bonding structure to obtain a first bonding structure; the annealing process is used to enhance the bonding strength of the wafer bonding interface in the first intermediate bonding structure.
Optionally, annealing the first bonding structure to peel the silicon wafer along the defect layer, and obtaining a second bonding structure includes: annealing the first bonding structure to enable the silicon wafer to be stripped along the defect layer to obtain a second intermediate bonding structure; and carrying out chemical mechanical polishing treatment on the second intermediate bonding structure to remove the defect layer so as to obtain a second bonding structure.
The invention has the beneficial effects that: the silicon nitride material is added between the silicon waveguide layer and the lithium niobate thin film layer to serve as a transition waveguide, so that the optical integration of the silicon material and the lithium niobate material is realized. Meanwhile, the silicon nitride material is used as a loading strip waveguide, so that light is simultaneously limited in the lithium niobate thin film layer and the silicon nitride waveguide layer, and the lithium niobate material is prevented from being etched in the preparation process of the hybrid modulator, so that a passive device is easy to design.
Drawings
In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a hybrid modulator according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing a hybrid modulator according to an embodiment of the present invention;
fig. 3 is a partial flow chart of a method for manufacturing a hybrid modulator according to an embodiment of the present invention.
In the figures, the reference numerals correspond to: 1-a silicon substrate layer; 2-a silicon dioxide light isolation layer; 3-a lithium niobate thin film layer; 4-an electrode layer; 5-a silicon dioxide dielectric layer; a 6-silicon nitride waveguide layer; a 7-silicon waveguide layer; the side of the 32-lithium niobate thin film layer, which is far away from the silicon dioxide light isolation layer; 101-a silicon wafer; 102-a defect layer; 110 — a first bonding structure; 120-a second bonding structure; 121-a second intermediate bonding structure; 130-hybrid modulator.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or server that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a hybrid modulator according to an embodiment of the present invention. The hybrid modulator comprises a Lithium Niobate (LNOI) structure on an insulator, wherein the lithium niobate structure on the insulator comprises a silicon substrate layer 1, a silicon dioxide optical isolation layer 2 and a lithium niobate thin film layer 3 which are sequentially stacked. Optionally, the height of the silicon dioxide light isolation layer 2 is 2-9 micrometers; the height of the lithium niobate thin film layer 3 is 100-700 nm.
On the side 32 of the lithium niobate thin film layer remote from the silicon dioxide optical isolation layer, there are at least two electrode layers 4 arranged at intervals, wherein fig. 1 shows three electrode layers 4. In the embodiment of the present application, the electrode layer 4 structure includes a coplanar electrode structure, and further includes a microstrip line structure or a ring structure. A silicon dioxide dielectric layer 5 is arranged between the at least two electrode layers 4, and a silicon nitride waveguide layer 6 is arranged between the at least two silicon dioxide dielectric layers 5. Therefore, the silicon nitride waveguide layer 6 and the lithium niobate thin film layer 3 form a loading strip waveguide structure. Wherein the difference between the height of the silicon dioxide dielectric layer 5 and the height of the silicon nitride waveguide layer 6 is h, and h is more than or equal to 0 and less than 50 nanometers. Optionally, the height of the silicon nitride waveguide layer 6 is 50-300 nm, and the width of the silicon nitride waveguide layer 6 is 0.5-5 μm.
With continued reference to fig. 1, a silicon waveguide layer 7 is provided on the silicon nitride waveguide layer 6, such that optical coupling between the silicon waveguide layer 7 and the silicon nitride waveguide layer 6 is achieved by means of a vertical coupling structure. Optionally, the height of the waveguide layer of the silicon waveguide layer 7 is 100-400 nm. The silicon waveguide layer 7 comprises a first silicon waveguide passive device therein, wherein the first silicon waveguide passive device comprises a silicon power splitter. The silicon nitride waveguide layer 6 and the silicon power divider form a mach-zehnder interferometer structure.
The silicon waveguide layer 7 also comprises a second silicon waveguide passive device; the second silicon waveguide passive device includes a combination of one or more of a multimode interference coupler, a directional coupler, a Y-splitter, a polarization rotator, a polarization rotating splitter, and an arrayed waveguide grating.
Example two
The embodiment of the invention provides a preparation method of a hybrid modulator, and the preparation method shown in fig. 2 comprises the following steps:
s201: the silicon wafer 101 is ion implanted to form a defect layer 102 in the silicon wafer 101.
The ion implantation comprises implanting hydrogen ions and/or helium ions at an energy of 20-60 keV and a dose of 2e16-1e17Ions per square centimeter.
S202: a silicon nitride layer of a prescribed thickness is grown on the ion-implanted face of the silicon wafer 101, and the silicon nitride layer is etched to form a silicon nitride waveguide layer 6.
Optionally, the temperature for growing the silicon nitride layer is 100-800 ℃.
In addition, the embodiment of the present invention does not require the execution order of S201 and S202.
S203: a silicon dioxide dielectric layer 5 is grown on the ion implanted face of the silicon wafer 101 such that the silicon dioxide dielectric layer 5 covers the silicon nitride waveguide layer 6.
S2031: after the silicon dioxide dielectric layer 5 covers the silicon nitride waveguide layer 6, the silicon dioxide dielectric layer 5 is planarized, and the height of the silicon dioxide dielectric layer 5 on the silicon nitride waveguide layer 6 is controlled to be less than 50 nanometers.
S204: and carrying out wafer bonding on the silicon dioxide dielectric layer 5 and the lithium niobate thin film layer 3 in the lithium niobate structure on the insulator to obtain the first bonding structure 110.
The lithium niobate structure on the insulator comprises a silicon substrate layer 1, a silicon dioxide optical isolation layer 2 and a lithium niobate thin film layer 3.
Carrying out wafer bonding on the silicon dioxide dielectric layer 5 and the lithium niobate thin film layer 3 in the lithium niobate structure on the insulator to obtain a first bonding structure 110, wherein the first bonding structure comprises:
s2041: and polishing the silicon dioxide dielectric layer 5 to obtain the polished silicon dioxide dielectric layer 5.
S2042: and carrying out wafer bonding on the polished silicon dioxide dielectric layer 5 and the lithium niobate thin film layer 3 in the lithium niobate structure on the insulator to obtain a first intermediate bonding structure.
S2043: the first intermediate bonding structure is annealed to obtain a first bonding structure 110. The annealing process is used to enhance the bonding strength of the wafer bonding interface in the first intermediate bonding structure.
Optionally, the annealing temperature is 300-900 ℃.
S205: the first bonding structure 110 is annealed to peel the silicon wafer 101 along the defect layer 102, resulting in the second bonding structure 120.
S206: the silicon wafer layer in the second bonding structure 120 is etched to form a silicon waveguide layer 7.
S207: and etching the silicon dioxide dielectric layer 5 in the second bonding structure 120 to form an electrode deposition through hole.
S208: an electrode layer 4 is deposited on the electrodeposited via holes to obtain the hybrid modulator 130.
As shown in fig. 3, the step S205 of annealing the first bonded structure 110 to peel the silicon wafer 101 along the defect layer 102 to obtain the second bonded structure 120 includes:
s2051: the first bonding structure 110 is annealed to peel the silicon wafer 101 along the defect layer 102, resulting in a second intermediate bonding structure 121.
S2052: the second intermediate bonded structure 121 is subjected to a Chemical Mechanical Polishing (CMP) process to remove the defective layer 102, resulting in a second bonded structure 120.
According to the embodiment provided by the invention, the silicon nitride material is added between the silicon waveguide layer and the lithium niobate thin film layer to serve as the transition waveguide, so that the optical integration of the silicon material and the lithium niobate material is realized. Meanwhile, the silicon nitride material is used as a loading strip waveguide, so that the lithium niobate material can be prevented from being etched in the preparation process of the hybrid modulator, and a passive device is easy to design.
It should be noted that: the sequence of the embodiments of the present application is only for description, and does not represent the advantages and disadvantages of the embodiments. And specific embodiments thereof have been described above. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing may also be possible or may be advantageous.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the apparatus embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
It will be understood by those skilled in the art that all or part of the steps for implementing the above embodiments may be implemented by hardware, or may be implemented by a program instructing relevant hardware, where the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a magnetic disk or an optical disk, etc.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A hybrid modulator, characterized by:
the silicon-on-insulator lithium niobate structure comprises a silicon substrate layer (1), a silicon dioxide optical isolation layer (2) and a lithium niobate thin film layer (3) which are sequentially stacked;
at least two electrode layers (4) arranged at intervals are arranged on one side of the lithium niobate thin film layer (3) far away from the silicon dioxide optical isolation layer (2); a silicon dioxide dielectric layer (5) is arranged between the at least two electrode layers (4); the silicon nitride waveguide layer (6) is arranged between the at least two silicon dioxide dielectric layers (5);
and a silicon waveguide layer (7) is arranged on the silicon nitride waveguide layer (6).
2. A hybrid modulator according to claim 1, characterized in that the silicon waveguide layer (7) comprises within it first silicon waveguide passive devices;
the first silicon waveguide passive device comprises a silicon power splitter;
the silicon nitride waveguide layer (6) and the silicon power divider form a Mach-Zehnder interferometer structure.
3. A hybrid modulator according to claim 2, characterized in that said silicon waveguide layer (7) further comprises a second silicon waveguide passive device therein;
the second silicon waveguide passive device comprises a combination of one or more of a multimode interference coupler, a directional coupler, a Y-beam splitter, a polarization rotator, a polarization rotating beam splitter, and an arrayed waveguide grating.
4. The hybrid modulator of claim 1, wherein the difference between the height of the silicon dioxide dielectric layer (5) and the height of the silicon nitride waveguide layer (6) is h, 0 ≦ h < 50 nm.
5. A hybrid modulator according to claim 1, characterized in that the electrode layer (4) structure comprises a coplanar electrode structure.
6. A method of making a hybrid modulator, comprising:
performing ion implantation on a silicon wafer (101) to form a defect layer (102) in the silicon wafer (101);
growing a silicon nitride layer with a specified thickness on the ion implantation surface of the silicon wafer (101), and etching the silicon nitride layer to form a silicon nitride waveguide layer (6);
growing a silicon dioxide dielectric layer (5) on the ion implantation surface of the silicon wafer (101) so that the silicon dioxide dielectric layer (5) covers the silicon nitride waveguide layer (6);
carrying out wafer bonding on the silicon dioxide dielectric layer (5) and the lithium niobate thin film layer (3) in the lithium niobate structure on the insulator to obtain a first bonding structure (110); the lithium niobate structure on the insulator comprises a silicon substrate layer (1), a silicon dioxide optical isolation layer (2) and a lithium niobate thin film layer (3);
annealing the first bonding structure (110) to enable the silicon wafer (101) to be stripped along the defect layer (102) to obtain a second bonding structure (120);
etching the silicon wafer 101 layer in the second bonding structure (120) to form a silicon waveguide layer (7);
etching the silicon dioxide dielectric layer (5) in the second bonding structure (120) to form an electrode deposition through hole;
and depositing an electrode layer (4) on the electrode deposition through hole to obtain the hybrid modulator (130).
7. The method of claim 6, wherein the ion implantation comprises implanting hydrogen ions and/or helium ions.
8. The method of claim 6, wherein the silicon dioxide dielectric layer (5) is planarized after the silicon nitride waveguide layer (6) is covered by the silicon dioxide dielectric layer (5), and the height of the silicon dioxide dielectric layer (5) above the silicon nitride waveguide layer (6) is controlled to be less than 50 nm.
9. The method of any of claims 6-8, wherein wafer bonding the silicon dioxide dielectric layer (5) with the lithium niobate thin film layer (3) in the lithium niobate-on-insulator structure to obtain a first bonded structure (110) comprises:
polishing the silicon dioxide dielectric layer (5) to obtain the polished silicon dioxide dielectric layer (5);
carrying out wafer bonding on the polished silicon dioxide dielectric layer (5) and a lithium niobate thin film layer (3) in a lithium niobate structure on an insulator to obtain a first intermediate bonding structure;
annealing the first intermediate bonding structure to obtain the first bonding structure (110); the annealing process is used to enhance the bonding strength of the wafer bonding interface in the first intermediate bonding structure.
10. The method of manufacturing a hybrid modulator according to claim 9, wherein annealing the first bonded structure (110) to cause the silicon wafer (101) to delaminate along the defect layer (102) to obtain a second bonded structure (120) comprises:
annealing the first bonding structure (110) to enable the silicon wafer (101) to be stripped along the defect layer (102) to obtain a second intermediate bonding structure (121);
and carrying out chemical mechanical polishing treatment on the second intermediate bonding structure (121) to remove the defect layer (102) so as to obtain the second bonding structure (120).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023179336A1 (en) * | 2022-03-21 | 2023-09-28 | 上海曦智科技有限公司 | Electro-optic modulator and manufacturing method therefor |
| WO2023217153A1 (en) * | 2022-05-09 | 2023-11-16 | 北京万集科技股份有限公司 | Phase shifter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023179336A1 (en) * | 2022-03-21 | 2023-09-28 | 上海曦智科技有限公司 | Electro-optic modulator and manufacturing method therefor |
| WO2023217153A1 (en) * | 2022-05-09 | 2023-11-16 | 北京万集科技股份有限公司 | Phase shifter |
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