CN114018417A - Multi-region color temperature detection method and device - Google Patents
Multi-region color temperature detection method and device Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 41
- 238000001228 spectrum Methods 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000005457 Black-body radiation Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 17
- 239000004038 photonic crystal Substances 0.000 claims description 11
- 239000002086 nanomaterial Substances 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 8
- 230000003595 spectral effect Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000000411 transmission spectrum Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000012782 phase change material Substances 0.000 description 3
- 238000010146 3D printing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
- G01J5/601—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature using spectral scanning
Abstract
The disclosure relates to the technical field of color temperature sensing, in particular to a multi-region color temperature detection method and a multi-region color temperature detection device, wherein the method comprises the following steps: setting a spectrum selection layer, wherein the spectrum selection layer comprises at least 2 regions, each region is respectively provided with a spectrum selection structure, and the spectrum selection structures are used for transmitting light rays of a specific waveband; light transmitted through the spectrally selective structure propagates to the photosensitive layer, which includes a region corresponding to each region in the spectrally selective layer, and converts the collected optical signal into an electrical signal; the electric signal is output to the processing module, the processing module obtains the signal intensity of each region of the photosensitive layer, calculates a target spectrum of incident light of each region, and compares the obtained target spectrum with a preset blackbody radiation spectrum to obtain the color temperature of each region. The color temperature detection method and the color temperature detection device can realize accurate detection of the color temperature of each region, can also reduce the difficulty of multi-region color temperature detection, and reduce the volume and cost of detection products.
Description
Technical Field
The disclosure relates to the technical field of color temperature sensing, in particular to a multi-region color temperature detection method and device.
Background
The color temperature is a unit of measure representing the color component contained in the light. Theoretically, the color temperature of a black body refers to the temperature at which an absolute black body starts to warm from absolute zero (-273.5 ℃) to exhibit a specific color. After being heated, the black body gradually turns from black to red, turns yellow and becomes white, and finally emits blue light. When the black body is heated to a certain temperature, the spectral components of the emitted light are the same as those of a certain object, and the temperature is called the color temperature of the object, and the measurement unit is K (Kelvin). The color temperature sensor is used as a direct instrument for measuring color temperature, can accurately measure the actual color temperature in various application scenes, and is widely applied to the aspects of photography, intelligent illumination, image processing, image display, machine vision and the like.
In the process of daily photographing, photographing or image processing, white balance can help a photographer to achieve an ideal picture tone effect and truly restore the image color. In the adjustment and control process of white balance, the color temperature value of the digital equipment needs to be accurately regulated and controlled according to the color temperature condition of on-site sunlight or lamplight, and whether the color temperature condition of the on-site can be accurately measured becomes more important. At present, a color temperature sensor commonly used in digital equipment is an integral module, is integrated near a flash lamp, and has a great effect on white balance processing and color cast processing during photographing. For example, when the light is warm at sunrise in the early morning, the ambient color temperature is about 3000K, and when the ambient color temperature is about 5500K at midday, the color temperature sensor accurately detects the ambient color temperature, so that the color temperature value of the equipment during photographing is automatically adjusted, and the obtained image color is closer to the real natural environment.
Disclosure of Invention
In order to solve at least the above technical problems in the prior art, the embodiments of the present disclosure provide a multi-region color temperature detection method and apparatus.
One aspect of the disclosed embodiments provides a multi-region color temperature detection method, including: setting a spectrum selection layer, wherein the spectrum selection layer comprises at least 2 regions, each region is respectively provided with a spectrum selection structure, and the spectrum selection structures are used for transmitting light rays of a specific waveband; light transmitted through the spectrally selective structure propagates to a photosensitive layer, which includes a region corresponding to each region in the spectrally selective layer, and which converts the collected light signals into electrical signals; the electric signal is output to a processing module, the processing module acquires the signal intensity of each region of the photosensitive layer, calculates a target spectrum of incident light of each region, and compares the acquired target spectrum with a preset blackbody radiation spectrum to acquire the color temperature of each region.
In some embodiments, the method further comprises: focusing light rays on a set plane, wherein the incidence plane of the spectrum selection structure is coincident with the plane, so that the imaging of the light rays is focused on the spectrum selection structure.
In some embodiments, the spectral response range of the spectrally selective structure is 360nm to 780 nm.
Another aspect of the disclosed embodiment provides a multi-region color temperature detection apparatus, which includes a spectrum selection layer, a photosensitive layer, and a reading circuit, which are stacked; the spectrum selection layer comprises at least 2 regions, each region is respectively provided with a spectrum selection structure, the photosensitive layer comprises a region corresponding to each region in the spectrum selection layer, and light rays penetrating through the spectrum selection structures are transmitted to the photosensitive layer; the reading circuit is electrically connected with the photosensitive layer and receives the electric signal transmitted by the photosensitive layer.
In some embodiments, the spectrally selective structure comprises one or more of a super-surface array, a photonic crystal, a phase change structure, or a multi-film structure.
In some embodiments, the spectrally selective structure comprises one or more of a micro-nano structure, a photonic band gap structure, a graded index structure, or a stacked structure of an ITO film and a phase change thin film.
In some embodiments, a focusing assembly is further included; the focusing assembly comprises a substrate, wherein an aperture diaphragm is arranged on a first surface of the substrate, a super-surface structure is arranged on a second surface which is opposite to and parallel to the first surface, and the super-surface structure is used for focusing the light rays on a focal plane of the super-surface structure; the entrance face of the spectrally selective structure coincides with the focal plane of the super-surface structure.
In some embodiments, a focusing assembly is further included; the focusing assembly comprises a lens group and an angle filter which are arranged in a superposed manner, and the angle filter is provided with a through hole array which is arranged along the lens group to the direction of the angle filter and penetrates through the angle filter; the outlet of each through hole in the array of through holes is arranged opposite to one of the spectrum selective structures.
In some embodiments, the optical device further comprises a substrate, the substrate is a medium material transparent in a visible light waveband, and the spectrum selection structure is arranged on the surface of the substrate.
In some embodiments, the spectrally selective layer comprises at least 9 regions, a plurality of the regions are arranged in an array, and the area of each of the regions is the same.
In the multi-region color temperature detection method and device provided by the embodiment of the disclosure, each region is integrated with the corresponding spectrum selection layer, the corresponding photosensitive layer and the corresponding processing module (reading circuit), so that the color temperature of each region can be accurately detected, an accurate and effective color temperature value is provided for image processing or white balance of digital equipment, and a multi-region color temperature compensation function of the same image can also be realized. In addition, based on the method provided by the disclosure, the color temperature detection of multiple regions can be completed by using one color temperature detection device, so that the number of the color temperature detection devices can be reduced, the difficulty of the color temperature detection of the multiple regions is effectively reduced, and the volume and the cost of a detection product are reduced.
Drawings
The above and other objects, features and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:
in the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.
Fig. 1 is a block flow diagram of a multi-region color temperature detection method according to an embodiment of the disclosure;
FIG. 2 is a block flow diagram of a multi-region color temperature detection method according to an embodiment of the disclosure;
FIG. 3 is an exploded view of a structure of a multi-region color temperature detection apparatus according to an embodiment of the present disclosure;
FIG. 4 is a schematic view of the focusing of light in the apparatus shown in FIG. 3;
FIG. 5 is a schematic diagram of a spectrally selective structure in the arrangement shown in FIG. 3;
FIG. 6 is a schematic diagram of a process for spectral reconstruction in the apparatus shown in FIG. 3;
FIG. 7 is an exploded view of another structure of a multi-region color temperature detecting device according to an embodiment of the present disclosure;
FIG. 8 is a schematic diagram of the structure of the device of FIG. 7 at the focusing element and the spectrally selective layer.
In the figure:
11: an aperture diaphragm; 12: a substrate; 13: a super-surface structure; 21: a substrate; 22: each region of the substrate; 23: a spectrum selection structure; 31: a light-sensitive surface; 32: each region of the photosurface; 41: a read circuit; 5: a photonic crystal type spectrum selection structure; 6: a graded index material type spectral selection structure; 7: a multi-film type spectrum selection structure; 81: a lens group; 91: an angle filter; 92: and a through hole.
Detailed Description
In order to make the objects, features and advantages of the present disclosure more apparent and understandable, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are only a part of the embodiments of the present disclosure, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
The inventor of the present disclosure finds that a commonly used color temperature sensor, which is generally an integral module sensor, cannot cope with color temperature detection under complex ambient light, and further affects white balance processing of equipment under complex ambient light. For example, in a studio, complex and staggered lights, which include warm-tone lights with a color temperature of about 3000K and cold-tone lights with a color temperature of about 6000K, in such a complex ambient light atmosphere environment, different regions often include multiple color temperature conditions in one image. The color temperature sensor commonly used at present is difficult to achieve color balance in the same image, thereby causing the condition of local color distortion.
In addition, the color temperature sensor of an integral module is mainly composed of the following two parts: an optical system including an entrance slit, a collimator, a dispersion element, and a focusing element; a detection system comprising a light sensing device (e.g., a CCD sensor, a cmos sensor, etc.) and a read circuit. When the color temperature sensor is integrated into a digital device, introduction of various optical elements included in the color temperature sensor brings disadvantages of high cost, large volume, complex structure, and the like.
In some embodiments, the multi-region color temperature detection method provided by the present disclosure, as shown in fig. 1, includes:
step S102: a spectrally selective layer is provided, which comprises at least 2 regions, each region being provided with a spectrally selective structure for transmitting light of a specific wavelength band, for example, the spectrally selective structure having a spectral response in the range of 360nm to 780 nm. In step S102, light rays in a large field angle are imaged on the spectrally selective layer, each region of the spectrally selective layer receives light rays, and the spectrally selective structure in each region transmits a specific spectrum (light rays of a specific wavelength band) to the photosensitive surface. A transmission spectrum matrix of spectrally selective structures measurable by the spectrally selective layer. Reference is made to the description below with respect to the specific structure of the spectrally selective structure.
Step S104: the light transmitted through the spectrally selective structure propagates to the photosensitive layer, which includes a region corresponding to each region in the spectrally selective layer, i.e., the photosensitive layer is also partitioned according to the partitioning condition of the spectrally selective layer, and the photosensitive layer converts the collected optical signal into an electrical signal. For example, the photosensitive layer is one or more of a silicon-based sensor, a compound semiconductor sensor, a quantum dot sensor, a germanium sensor, and the like.
Step S106: the electric signal is output to a processing module (reading circuit), the processing module acquires the signal intensity of each region of the photosensitive layer, calculates a target spectrum of incident light of each region, and compares the acquired target spectrum with a preset blackbody radiation spectrum to acquire the color temperature of each region, so that the color temperature detection of each region is completed.
In some embodiments, as shown in fig. 2, in the multi-region color temperature detection method provided by the present disclosure, light rays within a large field angle are imaged on the spectrum selection layer through the focusing assembly, and the specific steps include:
step S101: the light rays are focused on the set plane through the focusing assembly, and the incidence plane of the spectrum selection structure is superposed with the set plane, so that the imaging of the light rays is focused on the spectrum selection structure. Reference is made to the following description as to the specific structure of the focusing assembly.
In some embodiments, the present disclosure provides a multi-region color temperature detection apparatus, which includes a focusing assembly, a spectrum selection layer, a photosensitive layer, and a reading circuit, which are stacked. The focusing assembly can comprise two forms, one is a wide-angle super-lens structure, and the other adopts a structure combining a traditional lens group and an angle filter.
For example, the wide-angle super-lens structure comprises a substrate, wherein a first surface of the substrate is provided with an aperture stop, and a second surface which is opposite to the first surface and is arranged in parallel is provided with a super-surface structure. The aperture diaphragm is used for limiting the range of incident light, so that the light beam of each incident angle can be approximate to a paraxial light beam, and the purpose of reducing aberration is achieved. For example, the material of the aperture stop is a visible light opaque material, and for example, the material is a metal material such as gold, silver, or aluminum. The super-surface structure is used to focus light rays within a large field angle at its focal plane. For example, the material of the super-surface structure is a dielectric material with a larger refractive index in the visible light band, for example, a dielectric material with a refractive index larger than 2.5, for example, the material is silicon (Si), titanium dioxide (TiO)2) Silicon nitride (Si)3N4) And the like. The substrate is also a propagation medium. For example, the substrate is made of a material transparent to visible light and having a small refractive index, for example, the refractive index is 1.3 to 1.8, for example, the material is various polymers (such as PMMA, PDMS, etc.), silicon dioxide (SiO), etc2) And the like. Light rays in a large field angle can be imaged on the spectrum selection layer by using the wide-angle super lens. For example, the focal plane of the super-surface structure coincides with the light-entry face of the spectrally selective structure in the spectrally selective layer.
For example, another structure of the focusing assembly includes a lens set and an angle filter, which are stacked, and the angle filter is provided with a through hole array that is disposed along the lens set toward the angle filter and penetrates through the angle filter. For example, the lens group may be a short focal length, achromatic microlens group made using machining or micro-nano 3D printing techniques. The angle filter is a high depth-to-width ratio aperture angle filter made of a metal material, and a circular through hole array is generated by a wet etching method, so that the effect of low-angle filtering is achieved. For example, the outlet of each through-hole in the array of through-holes is arranged opposite to one of the spectrally selective structures in one of the regions concerned and/or the outlet of the through-hole and the spectrally selective structure are congruent.
For example, the spectrum selection layer comprises a substrate which is a medium material transparent in a visible light waveband, and the spectrum selection structure is arranged on the surface of the substrate. For example, the spectrally selective structure comprises one or more of a super-surface array, a photonic crystal, a phase change structure, or a multi-film structure. For example, the Material of the micro-nano structure, the photonic band gap structure and the graded index structure can be made of silicon nitride, amorphous silicon, titanium dioxide and various chalcogenide materials, the multi-film structure is formed by overlapping a tin indium oxide film (ITO) and a Phase Change Material (PCM-Phase Change Material) film for multiple times, and the substrate can be made of SiO2Or a chalcogenide material. For example, the spectrum selection structure comprises one or more of a micro-nano structure, a photonic band gap structure, a graded refractive index structure or an ITO film and phase change thin film overlapping structure. The specific spectrum passes through the spectrum selection layer to reach the photosensitive surface, and the photosensitive surface converts the collected optical signal into an electric signal.
For example, the signal intensity of the photosurface of each region is obtained through a reading circuit, a target spectrum of incident light of each region is calculated by combining the calibrated transmission characteristic spectra of each region, and the target spectrum is compared with the blackbody radiation spectrum to obtain the color temperature of each region.
In some embodiments, the image presented by the focusing assembly is divided into 3 × 3, 4 × 4, or more regions according to the actual application scenario, and the plurality of regions are arranged in an array, wherein the more the divided regions are, the higher the accuracy of the obtained color temperature is. The corresponding spectrum selection layer, the photosensitive layer and the reading circuit are integrated in each area, the color temperature of each area is accurately detected, an accurate and effective color temperature value is finally provided for image processing or white balance of digital equipment, and further a multi-area color temperature compensation function of the same image can be realized.
The following will further describe the multi-region color temperature detection device with reference to the drawings and the preparation method of the multi-region color temperature detection device.
As shown in fig. 3, which is an exploded view of a multi-region color temperature detection device, the multi-region color temperature detection device includes a wide-angle super lens or a lens set, an angle filter, a spectrum selection layer, a photosensitive surface, and a readout circuit. The material of the substrate 12 of the wide-angle super lens can be selected from SiO2The material has a thickness of about 1mm, an aluminum film with a thickness of about 1um is grown on the upper surface of the substrate 12 through a thermal evaporation process, and a Si film is grown on the lower surface of the substrate 12 through a plasma enhanced chemical vapor deposition method. And a clear aperture with the diameter of about 1mm is formed on the aluminum film by adopting a mechanical cutting method to be used as an aperture diaphragm 11 of the whole device. Designing a structural design formula according to the super surface:
wherein x and y are the coordinates of the wide-angle super-lens super-structure unit,
is the incidence inclination angle of the oblique incidence beam and the x-axis and the y-axis, f is the focal length of the wide-angle super lens, lambda is the incident light wavelength,
，
。
designing SiO according to the above super surface structure design formula2The structure of the lower surface super-structure unit is formed on SiO by adopting a photoetching process2Lower surface preparationAnd forming a super surface structure 13 meeting the design requirement so as to finish the preparation of the whole wide-angle super lens.
As shown in fig. 4, light rays in a large field angle can be imaged on the spectrum selection layer by using the wide-angle super lens in fig. 3. The focal plane of the super-surface-structure 13 coincides with the entrance face of the spectrally selective layer 3.
As shown in fig. 7, a material such as fused quartz, calcium fluoride, magnesium fluoride, silicon, selenium, germanium, zinc selenide, or other kinds of optically colorless glass is made into a short-focal-length, achromatic lens group 81 by using a machining or micro-nano 3D printing technique. Then, the through hole 92 is machined in the angle filter 91, specifically by: a micro-nano processing technology is used for generating a circular through hole array on a metal aluminum film with the thickness of about 5mm through a wet etching technology, the period of the through holes is 100um, the diameter of the through holes is 80um, and angle selection within about 1 degree of an incident angle can be achieved. Or monocrystalline silicon with the thickness of about 1mm is selected, a circular through hole array is generated through a deep silicon etching process, the through hole period is 20um, and the diameter is 16um, so that the angle selection of the incident angle of about 1 degree is realized. The lens group 81 and the angle filter 91 generated by the above process focus an image at a large field angle on the surface of the spectrum selection layer; meanwhile, as shown in fig. 8, each through hole 92 of the angular filter 91 needs to correspond to the micro-nano structure array on each area spectrum selection layer, and only the correspondence between part of the through holes 92 and the spectrum selection structure 23 is considered in the figure.
As shown in fig. 3 and 7, the substrate 21 of the spectrum selection layer is a dielectric substrate transparent in the visible light band, for example, a quartz wafer with a thickness of about 0.3mm is selected. Deposition of about 500nm thick phase change material GST (Ge) on the back of substrate 212Sb2Te5) A film. 36 micro-nano structures or photonic crystal arrays with different periods and transmission spectra are generated on the photoresist by utilizing a photoetching process, the structures are transferred to the GST film layer by a dry etching process to generate the spectrum selection structure 23 (a nano structure and the like), and the target spectrum response range of the spectrum selection structure is 360-780 nm. The period of the photonic crystal nano-hole is 300-600 nm, the diameter is 100-300 nm, the size of the nano-structure 23 is about 16um, and light between each area 22 on the substrate 21The sub-crystal nanopore pitch is 20 um. As shown in fig. 5, in the embodiment of the present disclosure, the spectrum selection structure may adopt various structures, for example, a photonic crystal type spectrum selection structure 5, or a graded index material type spectrum selection structure 6, or a multi-film type spectrum selection structure 7.
With continued reference to fig. 3 and 7, each region 32 of the photosurface 31 is provided with an image sensor, for example, a black and white CMOS sensor with 1.3M pixels is provided in each region 32, the spectral response range is about 350-800 nm, and the black and white CMOS sensor acquires the current response generated by the light transmitted through the spectral selection layer.
The reading circuit 41 includes an integrated board for various signal processing, and processes and outputs the current response on the CMOS sensor front in the photosurface.
In some embodiments, the spectrum selection layer comprises a plurality of regions, and each region is provided with 36 micro-nano structures with different periods and transmission spectrums, so that the spectrum distribution of an image focused in each region is ensured.
And calibrating the transmission spectrum of the photonic crystal nano array to obtain a standard transmission spectrum matrix under 360-780 nm. As shown in fig. 6, the signal response value s (n) of the CMOS sensor under the photonic crystal is calculated by performing edge acquisition and gray scale extraction on the photo imaged by each group of photonic crystals in the spectrum selection layer, the target spectrum of incident light is reconstructed by an algorithm based on the measured standard transmission spectrum matrix a (λ, n) of the photonic crystal nano array, and the obtained target spectrum is compared with the standard black body radiation spectrum, thereby finally obtaining the color temperature conditions of all regions in the imaged image. For example, the algorithm includes one or more of a PLS algorithm, a SVM algorithm, an ANN algorithm, an RF algorithm, a GS algorithm, a GN algorithm, a CNN algorithm, or an AE algorithm, among others.
The multi-region color temperature detection method and device provided by the embodiment of the disclosure integrate the corresponding spectrum selection layer, photosensitive layer and processing module (reading circuit) in each region, thereby realizing accurate detection of color temperature of each region, providing accurate and effective color temperature value for digital equipment image processing or white balance, and realizing multi-region color temperature compensation function of the same image. In addition, based on the method provided by the disclosure, the color temperature detection of multiple regions can be completed by using one color temperature detection device, so that the number of the color temperature detection devices can be reduced, the difficulty of the color temperature detection of the multiple regions is effectively reduced, and the volume and the cost of a detection product are reduced.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, "a plurality" means two or more unless specifically limited otherwise.
The above is only a specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present disclosure, and shall be covered by the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A multi-region color temperature detection method, wherein the method comprises:
setting a spectrum selection layer, wherein the spectrum selection layer comprises at least 2 regions, each region is respectively provided with a spectrum selection structure, and the spectrum selection structures are used for transmitting light rays of a specific waveband;
light transmitted through the spectrally selective structure propagates to a photosensitive layer, which includes a region corresponding to each region in the spectrally selective layer, and which converts the collected light signals into electrical signals;
the electric signal is output to a processing module, the processing module acquires the signal intensity of each region of the photosensitive layer, calculates a target spectrum of incident light of each region, and compares the acquired target spectrum with a preset blackbody radiation spectrum to acquire the color temperature of each region.
2. The method of claim 1, wherein the method further comprises:
focusing light rays on a set plane, wherein the incidence plane of the spectrum selection structure is coincident with the plane, so that the imaging of the light rays is focused on the spectrum selection structure.
3. A method according to claim 1 or 2, wherein the spectral response of the spectrally selective structure is in the range 360nm to 780 nm.
4. A multi-region color temperature detection device comprises a spectrum selection layer, a photosensitive layer and a reading circuit which are arranged in a superposition mode;
the spectrum selection layer comprises at least 2 regions, each region is respectively provided with a spectrum selection structure, the photosensitive layer comprises a region corresponding to each region in the spectrum selection layer, and light rays penetrating through the spectrum selection structures are transmitted to the photosensitive layer;
the reading circuit is electrically connected with the photosensitive layer and receives the electric signal transmitted by the photosensitive layer.
5. The apparatus of claim 4, wherein the spectrally selective structure comprises one or more of a super-surface array, a photonic crystal, a phase change structure, or a multi-film structure.
6. The apparatus of claim 5, wherein the spectrally selective structure comprises one or more of a micro-nano structure, a photonic band gap structure, a graded index structure, or a stacked structure of an ITO film and a phase change thin film.
7. The apparatus of any one of claims 4 to 6, further comprising a focusing assembly;
the focusing assembly comprises a substrate, wherein an aperture diaphragm is arranged on a first surface of the substrate, a super-surface structure is arranged on a second surface which is opposite to and parallel to the first surface, and the super-surface structure is used for focusing the light rays on a focal plane of the super-surface structure;
the entrance face of the spectrally selective structure coincides with the focal plane of the super-surface structure.
8. The apparatus of any one of claims 4 to 6, further comprising a focusing assembly;
the focusing assembly comprises a lens group and an angle filter which are arranged in a superposed manner, and the angle filter is provided with a through hole array which is arranged along the lens group to the direction of the angle filter and penetrates through the angle filter;
the outlet of each through hole in the array of through holes is arranged opposite to one of the spectrum selective structures.
9. The device according to any one of claims 4 to 6, further comprising a substrate, wherein the substrate is a medium material transparent in a visible light band, and the spectrum selective structure is arranged on the surface of the substrate.
10. The apparatus of any one of claims 4 to 6, wherein the spectrally selective layer comprises at least 9 regions, a plurality of which are arranged in an array and each of which has the same area.
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