CN114008710A - 一种数据处理方法、装置以及存储介质 - Google Patents
一种数据处理方法、装置以及存储介质 Download PDFInfo
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- CN114008710A CN114008710A CN201980097613.2A CN201980097613A CN114008710A CN 114008710 A CN114008710 A CN 114008710A CN 201980097613 A CN201980097613 A CN 201980097613A CN 114008710 A CN114008710 A CN 114008710A
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- error bit
- count value
- bit number
- read
- threshold
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
本申请公开了一种数据处理方法,包括:获取闪存块的第一读干扰计数值;若第一读干扰计数值不大于第一门限且属于调整区间,则获取统计信息,统计信息是根据第一集合得到的,其中包括闪存块中多个目标数据单元对应的多个原始出错比特数,每个目标数据单元对应一个原始出错比特数;根据统计信息判断第一读干扰计数值是否满足调整条件;若满足,则根据统计信息确定闪存块的第二读干扰计数值;若第二读干扰计数值大于第一门限,则对闪存块进行数据迁移。本申请还提供相应的装置和存储介质。本申请技术方案能够提升读干扰计数值评价闪存块所受读干扰影响程度的准确度,还可以在满足数据可靠性的同时,避免不必要的GC操作,提升存储器的使用寿命。
Description
PCT国内申请,说明书已公开。
Claims (39)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/093988 WO2021000092A1 (zh) | 2019-06-29 | 2019-06-29 | 一种数据处理方法、装置以及存储介质 |
Publications (1)
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CN114008710A true CN114008710A (zh) | 2022-02-01 |
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CN201980097613.2A Pending CN114008710A (zh) | 2019-06-29 | 2019-06-29 | 一种数据处理方法、装置以及存储介质 |
Country Status (2)
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CN (1) | CN114008710A (zh) |
WO (1) | WO2021000092A1 (zh) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US9361182B2 (en) * | 2014-05-20 | 2016-06-07 | Transcend Information, Inc. | Method for read disturbance management in non-volatile memory devices |
US10482983B2 (en) * | 2016-12-22 | 2019-11-19 | Seagate Technology Llc | Read disturb detection based on dynamic bit error rate estimation |
CN107403643B (zh) * | 2017-07-17 | 2019-12-24 | 华中科技大学 | 一种通过重定向提高3d fg nand闪存可靠性的方法 |
CN107832016A (zh) * | 2017-11-13 | 2018-03-23 | 郑州云海信息技术有限公司 | 一种读干扰优化方法及装置 |
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2019
- 2019-06-29 CN CN201980097613.2A patent/CN114008710A/zh active Pending
- 2019-06-29 WO PCT/CN2019/093988 patent/WO2021000092A1/zh active Application Filing
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WO2021000092A1 (zh) | 2021-01-07 |
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