CN114006264A - Structure of long wavelength VCSEL and preparation method thereof - Google Patents
Structure of long wavelength VCSEL and preparation method thereof Download PDFInfo
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- CN114006264A CN114006264A CN202111248342.1A CN202111248342A CN114006264A CN 114006264 A CN114006264 A CN 114006264A CN 202111248342 A CN202111248342 A CN 202111248342A CN 114006264 A CN114006264 A CN 114006264A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the technical field of VCSEL preparation, in particular to a structure of a long-wavelength VCSEL and a preparation method thereof. The invention solves the problems of complex process and difficult preparation at present, and is suitable for preparing high-power VCSEL devices and long-wavelength VCSELs.
Description
Technical Field
The invention relates to the technical field of VCSEL preparation, in particular to a structure of a VCSEL with long wavelength and a preparation method thereof.
Background
VCSELs are the acronym for Vertical Cavity Surface Emitting lasers, i.e., Vertical Cavity Surface Emitting lasers. The VCSEL is a semiconductor Laser Diode, which is developed based on semiconductor materials such as gallium arsenide, and is different from other light sources such as an LED (light emitting Diode) and an LD (Laser Diode). Unlike a conventional Edge emitting (Edge emitter) laser, the VCSEL vertically emits a high-power optical laser beam from the top surface, has the advantages of small size, circular output light spot, natural 2D structured light, single longitudinal mode output, small threshold current, large working temperature range, low price, easy integration into a large-area array, and the like, and is widely applied to the fields of optical communication, optical interconnection, optical storage, and the like.
With the development of the technologies of internet of things, AI and 5G, the 3D imaging and sensing technology has developed at a high speed, so that the development of multiple fields such as smart phones, AR/VR and smart cars is prized, and the arrival of the world of interconnection of everything is accelerated. VCSELs are at the pyramid tip of the intelligent interconnect industry as core devices for 3D imaging and sensing systems. Short wavelength infrared VCSELs based on gaas substrates, such as 850nm, 980nm, etc., have been vigorously developed and are well-suited. Manufacturers at home and abroad play a great role in the research and development and application of VCSELs with the wave bands.
However, there are still many design constraints in the fabrication and development of long wavelength VCSELs, such as 1310nm, 1550nm, etc., such as DBR which is not easy to fabricate, current limitation which is not easy to obtain, etc. At present, manufacturers capable of producing and commercially producing long wavelength VCSELs internationally have several refractive indexes, and all the adopted process routes are methods of burying tunnel junctions, so that the process is extremely complex, and the yield is low.
To this end, the present application designs a new structure of a long wavelength VCSEL and a method for fabricating the same to solve the above problems.
Disclosure of Invention
The invention provides a structure of a long wavelength VCSEL and a preparation method thereof in order to make up the defects of complex process and difficult preparation of the long wavelength VCSEL in the prior art.
The invention is realized by the following technical scheme:
a structure of a long wavelength VCSEL comprising a heat sink, characterized in that:
the bottom laminating of heat sink has first contact metal, the bottom laminating of first contact metal has a bottom DBR, the bottom laminating of bottom DBR has first ITO, the bottom laminating of first ITO has the medium passivation layer, the bottom laminating of medium passivation layer has the N/P type layer, the active area is laminated to the bottom of N/P type layer, the bottom laminating of active area has the P/N type layer, the bottom laminating of P/N type layer has the second ITO, the laminating of second ITO bottom pushes up the DBR, the laminating of the bottom of top DBR has second contact metal.
Furthermore, in order to better implement the invention, the heat sink is made of aluminum nitride or copper;
the first contact metal and the second contact metal are single-layer or multi-layer metal layers suitable for N/P-InP ohmic contact, and the contact metal comprises gold, nickel, titanium, aluminum, germanium and platinum;
the bottom DBR and the top DBR are formed by overlapping at least two dielectric materials, and the types of the dielectric materials comprise titanium oxide, silicon oxide, aluminum oxide, niobium oxide, aluminum nitride and silicon nitride;
the reflectivity of the bottom DBR and the top DBR is more than 99% near the lasing wavelength, and the bandwidth of the high-reflectivity region is more than 50 nm;
the first ITO and the second ITO can be in good ohmic contact with the N/P-InP type layer;
the medium passivation layer is a silicon nitride layer;
the P/N type layer is made of InP or InGaAs materials;
the active region is an InP/InGaAs quantum well structure.
The structure based on the long wavelength VCSEL is prepared by the following steps:
s1, cleaning the wafer with the long wavelength VCSEL device epitaxial structure;
s2, defining a light outlet by utilizing a photoetching technology;
s3, etching a mesa structure by using a dry etching technology;
s4, laterally etching the mesa structure by using a wet etching technology;
s5, depositing a medium passivation layer;
s6, defining the light hole again by using the overlay technology;
s7, etching to remove the medium passivation layer at the light-emitting hole;
s8, depositing a first ITO layer;
s9, depositing and preparing a bottom DBR layer;
s10, removing part of the DBR layer region by combining the photoetching process;
s11, depositing ohmic contact metal;
s12, preparing a heat sink by using an electroplating technology;
s13, adhering the wafer on the temporary substrate;
s14, removing the InP substrate by using a CMP process;
s15, depositing a second ITO layer;
s16, depositing a top DBR layer;
s17, removing part of the DBR layer region by combining an alignment process;
s18, defining an ohmic contact region by utilizing a photoetching process;
s19, depositing ohmic contact metal;
and S20, removing the temporary substrate.
Further, in order to better implement the present invention, the epitaxial structure of the long wavelength VCSEL device in S1 only includes an active layer and an active layer cladding layer, and does not have a DBR structure, and the cleaning process at least includes acetone cleaning, alcohol cleaning, and deionized water cleaning; the light outlet in the S2 is of a circular structure; the dry etching technology in the S3 comprises ICP etching and Ar ion etching; the wet etching technology in the step S4 is slow wet etching; the deposition method of the dielectric passivation layer in the step S5 comprises PECVD and electron beam deposition.
Further, in order to better implement the present invention, in S6, the light exit hole is defined again to be a circular structure by using an overlay technique, and the diameter of the light exit hole is smaller than that of the circular structure defined in S2; the etching method in the S7 comprises RIE etching, ICP etching and Ar ion etching; the methods for depositing the ITO layer in S8 and S15 include sputtering, electron beam deposition; the deposition method for preparing the DBR layer in S9 and S16 comprises electron beam deposition and sputtering.
Further, in order to better implement the present invention, the methods for depositing the ohmic contact metal in S11 and S19 include electron beam deposition, sputtering; the method for adhering the wafer to the temporary substrate in the step S13 comprises the steps of soft adhesion of glue, paraffin, photoresist and polyimide adhesive substances, and metal bonding of gold-tin alloy and indium; the refractive index of the top DBR layer in S16 is greater than 99% and less than 99.9%.
The invention has the beneficial effects that:
1. the method for preparing the VCSEL with the long wavelength does not need an epitaxial method to prepare a DBR structure, saves the growth time and can improve the epitaxial preparation yield.
2. The invention does not need a method for preparing a buried tunnel junction, and can simplify the growth process.
3. The method provided by the invention has wide application range, is not only suitable for preparing the VCSEL device with long wavelength, but also suitable for preparing the VCSEL device with any wavelength.
Drawings
Fig. 1 is a schematic structural diagram of a long wavelength VCSEL according to the present invention.
1. Heat sink, 2, first contact metal, 3, bottom DBR, 4, first ITO, 5, dielectric passivation layer, 6, N/P type layer, 7, active region, 8, P/N type layer, 9, second ITO, 10, top DBR, 11, second contact metal.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1 is a diagram of an embodiment of the present invention, which is a structure of a long wavelength VCSEL, and the embodiment grows a full structure with a total optical thickness of one wavelength (1.55 um) on an N-type InP substrate, and comprises an N-InP layer, an InP/InGaAs quantum well active region and a P-InP layer from bottom to top, wherein the active region has three periods of quantum well structures;
next, cleaning the sample by using acetone, alcohol and deionized water, and removing contamination generated in the preparation process;
then, preparing a circular lattice array with the diameter of 10um by using an MJB-4 photoetching machine and combining a corresponding photoetching plate and photoresist;
etching to the N-InP layer from top to bottom by utilizing an ICP etching technology, wherein the etching gases are BCl3, Cl2 and Ar;
then, removing damage generated by dry etching by using a wet etching technology, wherein the etching solution is dilute hydrochloric acid (HCl: H2O =1: 10), and then removing the photoresist;
next, depositing a SiN passivation layer with the thickness of 20nm by using a PECVD (plasma enhanced chemical vapor deposition) technology to cover the surface of the wafer structure;
then, by using an MJB-4 photoetching machine and combining a corresponding photoetching plate and photoresist through an alignment technology, preparing a circular array with the diameter of 5um on the original circular lattice array with the diameter of 10um, wherein the circle centers of the two arrays are overlapped;
next, removing the SiN passivation layer at the corresponding position by RIE etching technology, wherein the etching gases are CF4 and O2, and exposing the P-InP layer;
next, 100nm of ITO is deposited using a sputtering technique;
then, 12 pairs of silicon oxide/niobium oxide dielectric pairs are deposited by using a sputtering technique to prepare a DBR structure, wherein the reflectivity of the DBR structure corresponding to the position of 1.55um is more than 99.9%;
then, defining an upper electrode contact area by using an MJB-4 photoetching machine and combining a corresponding photoetching plate and photoresist through an alignment technology, and removing DBR structures at corresponding positions by using an RIE (reactive ion etching) technology, wherein etching gases are CF4 and O2, and an ITO (indium tin oxide) layer is exposed;
then, depositing and preparing a P-InP contact layer electrode by using an electron beam evaporation technology, wherein the electrode metal is Ti, Pt and Au;
then electroplating copper with the thickness of at least 50um on the electrode metal by utilizing an electroplating technology;
next, adhering the copper side of the wafer to the sapphire temporary substrate by using paraffin;
then, removing the N-InP substrate to the N-InP layer by utilizing a CMP technology;
next, using a sputtering technique, 100nm of ITO is deposited;
then, 8 pairs of silicon oxide/niobium oxide dielectric pairs are deposited by using a sputtering technique to prepare a DBR structure, wherein the reflectivity of the DBR structure corresponding to the position of 1.55um is more than 99% and less than 99.9%;
then, defining a lower electrode contact area by using an MJB-4 photoetching machine and combining a corresponding photoetching plate and photoresist through an alignment technology, and removing DBR structures at corresponding positions by using an RIE (reactive ion etching) technology, wherein etching gases are CF4 and O2, and an ITO (indium tin oxide) layer is exposed;
then, depositing and preparing an N-InP contact layer electrode by using an electron beam evaporation technology, wherein the electrode metal is Ni, Au/Ge, Ni and Au;
finally, the sapphire temporary substrate is removed.
Finally, the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting, and other modifications or equivalent substitutions made by the technical solutions of the present invention by those of ordinary skill in the art should be covered within the scope of the claims of the present invention as long as they do not depart from the spirit and scope of the technical solutions of the present invention.
Claims (6)
1. A structure of a long wavelength VCSEL comprising a heat sink (1), characterized in that:
the bottom laminating of heat sink (1) has first contact metal (2), the bottom laminating of first contact metal (2) has end DBR (3), the bottom laminating of end DBR (3) has first ITO (4), the bottom laminating of first ITO (4) has medium passivation layer (5), the bottom laminating of medium passivation layer (5) has N/P type layer (6), the bottom laminating of N/P type layer (6) has active area (7), the bottom laminating of active area (7) has P/N type layer (8), the bottom laminating of P/N type layer (8) has second ITO (9), laminating top DBR (10) is pressed down to second ITO (9) bottom, the bottom laminating of top DBR (10) has second contact metal (11).
2. The structure of a long wavelength VCSEL of claim 1, wherein:
the heat sink (1) is made of aluminum nitride or copper;
the first contact metal (2) and the second contact metal (11) are single-layer or multi-layer metal layers suitable for N/P-InP ohmic contact, and the contact metals comprise gold, nickel, titanium, aluminum, germanium and platinum;
the bottom DBR (3) and the top DBR (10) are formed by overlapping at least two dielectric materials, and the types of the dielectric materials comprise titanium oxide, silicon oxide, aluminum oxide, niobium oxide, aluminum nitride and silicon nitride;
the reflectivity of the top DBR (10) is more than 99% and less than 99.9% near the lasing wavelength, and the bandwidth of the high reflectivity region is more than 50 nm;
the reflectivity of the bottom DBR (3) is more than 99.9% near the lasing wavelength, and the bandwidth of the high-reflectivity region is more than 50 nm;
the first ITO (4) and the second ITO (9) can be in good ohmic contact with an N/P-InP type layer;
the medium passivation layer (5) is a silicon nitride layer;
the P/N type layer (8) is made of InP or InGaAs materials;
the active region (7) is of an InP/InGaAs quantum well structure.
3. A method for fabricating a structure based on the long wavelength VCSEL as described in any of the above 1 or 2, comprising the steps of:
s1, cleaning the wafer with the long wavelength VCSEL device epitaxial structure;
s2, defining a light outlet by utilizing a photoetching technology;
s3, etching a mesa structure by using a dry etching technology;
s4, laterally etching the mesa structure by using a wet etching technology;
s5, depositing a medium passivation layer;
s6, defining the light hole again by using the overlay technology;
s7, etching to remove the medium passivation layer at the light-emitting hole;
s8, depositing a first ITO layer;
s9, depositing and preparing a bottom DBR layer;
s10, removing part of the DBR layer region by combining the photoetching process;
s11, depositing ohmic contact metal;
s12, preparing a heat sink by using an electroplating technology;
s13, adhering the wafer on the temporary substrate;
s14, removing the InP substrate by using a CMP process;
s15, depositing a second ITO layer;
s16, depositing a top DBR layer;
s17, removing part of the DBR layer region by combining an alignment process;
s18, defining an ohmic contact region by utilizing a photoetching process;
s19, depositing ohmic contact metal;
and S20, removing the temporary substrate.
4. The method of fabricating a structure of a long wavelength VCSEL of claim 3, wherein:
the epitaxial structure of the long-wavelength VCSEL device in the S1 only comprises an active layer and an active layer cladding layer, and does not have a DBR structure, and the cleaning process at least comprises acetone cleaning, alcohol cleaning and deionized water cleaning;
the light outlet in the S2 is of a circular structure;
the dry etching technology in the S3 comprises ICP etching and Ar ion etching;
the wet etching technology in the step S4 is slow wet etching;
the deposition method of the dielectric passivation layer in the step S5 comprises PECVD, electron beam deposition and sputtering.
5. The method of fabricating a structure of a long wavelength VCSEL of claim 3, wherein:
in the step S6, the light outlet is defined again to be a circular structure by using an overlay technology, and the diameter of the light outlet is smaller than that of the circular structure defined in the step S2;
the etching method in the S7 comprises RIE etching, ICP etching and Ar ion etching;
the methods for depositing the ITO layer in S8 and S15 include sputtering, electron beam deposition;
the deposition method for preparing the DBR layer in S9 and S16 comprises electron beam deposition and sputtering.
6. The method of fabricating a structure of a long wavelength VCSEL of claim 3, wherein:
the methods for depositing the ohmic contact metal in S11 and S19 include electron beam deposition, sputtering;
the method for adhering the wafer to the temporary substrate in the step S13 comprises the steps of soft adhesion of glue, paraffin, photoresist and polyimide adhesive substances, and metal bonding of gold-tin alloy and indium;
the refractive index of the top DBR layer in S16 is greater than 99% and less than 99.9%.
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CN117810809A (en) * | 2024-02-29 | 2024-04-02 | 山东省科学院激光研究所 | Thin film optical pump vertical cavity surface emitting laser and preparation method thereof |
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