CN114005922A - Quantum dot light-emitting system and display device - Google Patents
Quantum dot light-emitting system and display device Download PDFInfo
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- CN114005922A CN114005922A CN202111176227.8A CN202111176227A CN114005922A CN 114005922 A CN114005922 A CN 114005922A CN 202111176227 A CN202111176227 A CN 202111176227A CN 114005922 A CN114005922 A CN 114005922A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 172
- 239000000463 material Substances 0.000 claims abstract description 69
- 230000005284 excitation Effects 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 22
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 13
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 12
- 229910007709 ZnTe Inorganic materials 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 238000001748 luminescence spectrum Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 3
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000006378 damage Effects 0.000 abstract description 5
- 208000027418 Wounds and injury Diseases 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 208000014674 injury Diseases 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 5
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- 239000011258 core-shell material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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Abstract
The embodiment of the application provides a quantum dot light emitting system and a display device. The application embodiment provides a quantum dot light system, including the excitation light source of transmission long wave blue light and the first quantum dot that has higher absorption efficiency to long wave blue light, compare with prior art, be 460nm ~ 480 nm's light source through changing the excitation light source for peak wavelength, can avoid the injury of short wave blue light to people's eye, realize the effect of eyeshield, in addition, through changing the quantum dot material into the first quantum dot that has higher absorption efficiency to long wave blue light, can improve the conversion efficiency of blue light, realize high light efficiency quantum dot and show.
Description
Technical Field
The application relates to the technical field of quantum dots, in particular to a quantum dot light system and a display device.
Background
Healthy eye protection is one of the development directions of displays, a backlight system adopted by the current display is generally in a form of combining an excitation light source and a quantum dot material, a part of light emitted by the excitation light source is absorbed by the quantum dot material and then converted into light of another waveband, emitted light of the excitation light source and the excitation light of the quantum dot material are mixed to form white light to be emitted, however, the emission spectrum of the currently adopted excitation light source comprises more short-wave blue light (less than or equal to 430nm), the part of light is easy to cause damage to human eyes, if the excitation light source is replaced by a light source emitting long-wave blue light, another problem occurs, namely, the absorption rate of the currently commonly used quantum dot material to the long-wave blue light is low, and the energy conversion efficiency of the blue light is low.
Disclosure of Invention
The embodiment of the application provides a quantum dot light system, adopts the excitation light source that emits long wave blue light and combines to the first quantum dot that long wave blue light has higher absorption efficiency, can realize higher photoconversion efficiency.
In a first aspect, an embodiment of the present application provides a quantum dot light system, including:
an excitation light source, wherein the peak wavelength of the luminescence spectrum of the excitation light source is 460 nm-480 nm;
the quantum dot material unit corresponds to the light emitting surface of the excitation light source, the quantum dot material unit comprises a first quantum dot, the first quantum dot comprises a first inner core, a first middle layer coated on the outer surface of the first inner core and a first shell coated on the outer surface of the first middle layer, the first inner core is made of CdSe, the first middle layer is made of ZnSe, and the first shell is made of ZnS.
In some embodiments, the quantum dot material unit is a quantum dot cladding layer cladding the outer surface of the excitation light source.
In some embodiments, the quantum dot material unit is a quantum dot membrane.
In some embodiments, the quantum dot material unit further comprises a second quantum dot, the second quantum dot comprising a second core, a second intermediate layer coated on an outer surface of the second core, and a second shell coated on an outer surface of the second intermediate layer, the material of the second core comprising CdSe, the material of the second intermediate layer comprising ZnTe, and the material of the second shell comprising ZnS.
In some embodiments, the quantum dot material unit further comprises a third quantum dot, the third quantum dot comprises a third inner core, a third shell coated on the outer surface of the third inner core, the material of the third inner core comprises CdSe, and the material of the third shell comprises ZnSe.
In some embodiments, the quantum dot material unit further comprises a fourth quantum dot, the fourth quantum dot comprising a fourth core, a fourth shell coated on an outer surface of the fourth core, a material of the fourth core comprising CdSe, and a material of the fourth shell comprising ZnTe.
In some embodiments, the excitation light source is an LED.
In some embodiments, the light emitted by the quantum dot light emitting system is white light.
In a second aspect, an embodiment of the present application provides a display device, which includes the quantum dot light system as described above.
In some embodiments, the display device is a liquid crystal display device.
The application embodiment provides a quantum dot light system, including the excitation light source of transmission long wave blue light and the first quantum dot that has higher absorption efficiency to long wave blue light, compare with prior art, be 460nm ~ 480 nm's light source through changing the excitation light source for peak wavelength, can avoid the injury of short wave blue light to people's eye, realize the effect of eyeshield, in addition, through changing the quantum dot material into the first quantum dot that has higher absorption efficiency to long wave blue light, can improve the conversion efficiency of blue light, realize high light efficiency quantum dot and show.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments will be briefly introduced below. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a first schematic structural diagram of a quantum dot light system according to an embodiment of the present disclosure.
Fig. 2 is a second schematic structural diagram of a quantum dot light system according to an embodiment of the present disclosure.
Fig. 3 is a schematic structural diagram of a first quantum dot provided in an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a second quantum dot provided in an embodiment of the present application.
Fig. 5 is a schematic structural diagram of a third quantum dot provided in an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a fourth quantum dot provided in an embodiment of the present application.
Fig. 7 is a luminescence spectrum of a quantum dot light-emitting system according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1 and fig. 2, fig. 1 is a first structural schematic diagram of a quantum dot light system provided in an embodiment of the present application, and fig. 2 is a second structural schematic diagram of the quantum dot light system provided in the embodiment of the present application. The embodiment of the application provides a quantum dot light system 100, which includes an excitation light source 101 and a quantum dot material unit 102, wherein the quantum dot material unit 102 is disposed corresponding to a light emitting surface of the excitation light source 101.
Referring to fig. 1, the quantum dot light system 100 may be a quantum dot light emitting device, and the quantum dot material unit 102 is a quantum dot cladding layer cladding the outer surface of the excitation light source 101.
Referring to fig. 2, the quantum dot light system 100 may be a quantum dot backlight module, the quantum dot material unit 102 is a quantum dot film, and the quantum dot film may be disposed at an interval with the excitation light sources 101, and it is understood that the quantum dot film may be disposed corresponding to one or more (two or more) excitation light sources 101. Illustratively, the quantum dot backlight module may be a direct type backlight module (as shown in fig. 2) or a side type backlight module.
Illustratively, the peak wavelength of the emission spectrum of the excitation light source 101 may be 460nm to 480nm, 15nm ≦ full width at half maximum (FWHM) ≦ 30 nm. It can be understood that the light of 460nm to 480nm is long-wave blue light, which has no harm to human eyes, thus having the effect of protecting eyes.
In some embodiments, the peak wavelength of the light spectrum of the excitation light source 101 may also be 460nm to 470nm, 470nm to 480nm, 465nm to 475nm, and the like.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a first quantum dot according to an embodiment of the present disclosure. The quantum dot material unit 102 may include a first quantum dot 10, the first quantum dot 10 includes a first core 11, a first intermediate layer 12 coated on an outer surface of the first core 11, and a first shell 13 coated on an outer surface of the first intermediate layer 12, a material of the first core 11 includes CdSe, a material of the first intermediate layer 12 includes ZnSe, and a material of the first shell 13 includes ZnS.
The commonly used quantum dot material in the prior art is a core-shell structure quantum dot with a CdSe core and a ZnS shell, and the band gap energy of the ZnS is 3.61eV, so that the absorption rate of the ZnS material to long-wave blue light with wavelength of 460-480 nm is low, and the blue light energy conversion efficiency is low.
For the absorption of the 460nm to 480nm blue light band, the band gap energy of the quantum dot material should be less than or equal to 2.7eV, in the first quantum dot 10 adopted in the embodiment of the present application, the first intermediate layer 12 is disposed between the first inner core 11 and the first outer shell 13, and the material of the first intermediate layer 12 is ZnSe, because the band gap energy of ZnSe is 2.69eV, the absorption rate of ZnSe for the 460nm to 480nm long-wave blue light is high, so that the first quantum dot 10 can have high blue light energy conversion efficiency.
The quantum dot light system 100 that the embodiment of the application provided, including the excitation light source 101 of transmission long wave blue light and the first quantum dot 10 that has higher absorption efficiency to the long wave blue light, compared with the prior art, through changing excitation light source 101 for the light source that peak wavelength is 460nm ~ 480nm, can avoid the injury of short wave blue light to the people's eye, realize the effect of eyeshield, in addition, through changing the quantum dot material for the first quantum dot 10 that has higher absorption efficiency to the long wave blue light, can improve the conversion efficiency of blue light, realize that high light efficiency quantum dot shows.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a second quantum dot according to an embodiment of the present disclosure. The quantum dot material unit 102 may further include a second quantum dot 20, the second quantum dot 20 includes a second core 21, a second intermediate layer 22 coated on an outer surface of the second core 21, and a second shell 23 coated on an outer surface of the second intermediate layer 22, a material of the second core 21 includes CdSe, a material of the second intermediate layer 22 includes ZnTe, and a material of the second shell 23 includes ZnS.
According to the second quantum dot 20 adopted in the embodiment of the application, the second intermediate layer 22 is arranged between the second inner core 21 and the second outer shell 23, the material of the second intermediate layer 22 is ZnTe, and the band gap energy of ZnTe is 2.39eV, so that the absorptivity of the ZnTe to the long-wave blue light of 460nm to 480nm is high, and the second quantum dot 20 can have high blue light energy conversion efficiency.
When the material in the quantum dot material unit 102 includes both the first quantum dot 10 and the second quantum dot 20, the mass ratio of the first quantum dot 10 to the second quantum dot 20 may be (0.8 to 1.2): (0.8 to 1.2), such as 0.8:1.2, 0.9:1.2, 1.0:1.2, 1.1:1.2, 1.2:0.8, 1.2:0.9, 1.2:1.0, 1.2:1.1, 1:1, etc.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a third quantum dot according to an embodiment of the present disclosure. The quantum dot material unit 102 may further include a third quantum dot 30, the third quantum dot 30 includes a third inner core 31 and a third outer shell 33 coated on an outer surface of the third inner core 31, a material of the third inner core 31 includes CdSe, and a material of the third outer shell 33 includes ZnSe.
According to the third quantum dot 30 adopted in the embodiment of the application, the material of the third shell 33 is set to be ZnSe, and the band gap energy of the ZnSe is 2.69eV, so that the absorptivity of the ZnSe to the long-wave blue light of 460nm to 480nm is high, and the third quantum dot 30 can have high blue light energy conversion efficiency.
When the material in the quantum dot material unit 102 includes both the first quantum dot 10 and the third quantum dot 30, the mass ratio of the first quantum dot 10 to the third quantum dot 30 may be (0.8 to 1.2): (0.8 to 1.2), such as 0.8:1.2, 0.9:1.2, 1.0:1.2, 1.1:1.2, 1.2:0.8, 1.2:0.9, 1.2:1.0, 1.2:1.1, 1:1, etc.
Referring to fig. 6, fig. 6 is a schematic structural diagram of a fourth quantum dot provided in the embodiment of the present application. The quantum dot material unit 102 may further include a fourth quantum dot 40, the fourth quantum dot 40 includes a fourth inner core 41 and a fourth outer shell 43 wrapping an outer surface of the fourth inner core 41, a material of the fourth inner core 41 includes CdSe, and a material of the fourth outer shell 43 includes ZnTe.
According to the fourth quantum dot 40 adopted in the embodiment of the application, the material of the fourth shell 43 is set as ZnTe, and the band gap energy of ZnTe is 2.39eV, so that the absorption rate of the 460 nm-480 nm long-wave blue light is high, and the fourth quantum dot 40 has high blue light energy conversion efficiency.
When the material in the quantum dot material unit 102 includes both the first quantum dot 10 and the fourth quantum dot 40, the mass ratio of the first quantum dot 10 to the fourth quantum dot 40 may be (0.8 to 1.2): (0.8 to 1.2), such as 0.8:1.2, 0.9:1.2, 1.0:1.2, 1.1:1.2, 1.2:0.8, 1.2:0.9, 1.2:1.0, 1.2:1.1, 1:1, etc.
Illustratively, when the quantum dot material unit 102 includes the first quantum dot 10, the second quantum dot 20, and the third quantum dot 30 at the same time, the mass ratio of the first quantum dot 10, the second quantum dot 20, and the third quantum dot 30 may be (0.8-1.2): (0.8-1.2), such as 0.8:1:0.8, 0.8:1:0.9, 0.8:1:1, 0.8:1:1.2, 1.2:1:0.8, 1.2:1:0.9, 1.2:1:1, 1.2:1:1.1, 1.2:1:1.2, 0.8:1.2:0.8, 0.9:1.2:0.9, 1:1.2:1, 1.1:1.2:1.1, 1:1: 1.1:1, 1:1, etc.
For example, when the quantum dot material unit 102 includes the first quantum dot 10, the third quantum dot 30, the fourth quantum dot 40, and the fourth quantum dot 40 at the same time, the mass ratio of the first quantum dot 10, the second quantum dot 20, the third quantum dot 30, and the fourth quantum dot 40 may be (0.8-1.2): 0.8-1.2, such as 0.8:1:0.8, 0.8:1:0.9, 0.8:1: 1:1, 0.8:1:1.2, 1.2:1:0.8, 1.2:1:0.9, 1.2:1:1, 1.2:1:1.1, 1.2:1:1.2, 0.8:1.2:0.8, 0.9:1.2:0.9, 1.1: 1:1: 1.1, 1.1:1.2, 1.8: 0.9: 1:1.1, 1:1.2, etc.
For example, when the quantum dot material unit 102 includes the first quantum dot 10, the second quantum dot 20, the third quantum dot 30, and the fourth quantum dot 40 at the same time, the mass ratio of the first quantum dot 10, the second quantum dot 20, the third quantum dot 30, and the fourth quantum dot 40 may be (0.8-1.2): 0.8-1.2, such as 0.8:1:0.8, 0.8:1:0.9, 0.8:1: 1:1, 0.8:1:1.2, 1.2:1:0.8, 1.2:1:0.9, 1.2:1:1, 1.2:1:1.1, 1.2:1:1.2, 0.8:1.2:0.8, 0.9:1.2:0.9, 1.1: 1:1: 1.1, 1.1:1.2, 1.8: 0.9: 1:1.1, 1:1.2, 1, 1.2, etc.
For example, the excitation light source 101 may be a light-emitting diode (LED).
Illustratively, the light emitted by the quantum dot light system 100 is white light. Specifically, the blue light emitted from the excitation light source 101 is mixed with the red light and the green light emitted from the quantum dot material unit 102 to form white light, and further, the wavelength of the light generated by the quantum dot material unit 102 may be controlled by controlling the size of the quantum dot particles in the quantum dot material unit 102, for example, the quantum dot particles having the particle size of 6nm to 8nm (e.g., 6nm, 7nm, 8nm, etc.) are excited by the light having the wavelength of 460nm to 480nm to generate red light, and the quantum dot particles having the particle size of 3nm to 5nm (e.g., 3nm, 4nm, 5nm, etc.) are excited by the light having the wavelength of 460nm to 480nm to generate green light.
Referring to fig. 7, fig. 7 is a luminescent spectrum of a quantum dot light-emitting system according to an embodiment of the present disclosure. It can be seen that the peak wavelength a3 of the blue light (left peak) emitted by the excitation light source 101 is in the range of 460nm to 480nm, green light (middle peak) and red light (right peak) emitted by the quantum dots exist in the emission spectrum at the same time, the blue light emitted by the excitation light source 101 and the red light and the green light emitted by the quantum dots are mixed to form white light output, and the short-wave blue light does not exist in the emission spectrum, so that the eye protection effect can be achieved.
The embodiment of the present application further provides a display device, which includes the quantum dot light system 100 in any of the above embodiments.
Illustratively, the display device may be a liquid crystal display device, the liquid crystal display device further includes a liquid crystal display panel, and the quantum dot light system 100 may provide backlight for the liquid crystal display panel.
The display device provided by the embodiment of the application provides backlight by adopting the quantum dot light system 100, and the quantum dot light system 100 has higher blue light conversion efficiency, so that lower power consumption can be realized.
The quantum dot light system and the display device provided by the embodiment of the application are described in detail above. The principles and implementations of the present application are described herein using specific examples, which are presented only to aid in understanding the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A quantum dot light system, comprising:
an excitation light source, wherein the peak wavelength of the luminescence spectrum of the excitation light source is 460 nm-480 nm;
the quantum dot material unit corresponds to the light emitting surface of the excitation light source, the quantum dot material unit comprises a first quantum dot, the first quantum dot comprises a first inner core, a first middle layer coated on the outer surface of the first inner core and a first shell coated on the outer surface of the first middle layer, the first inner core is made of CdSe, the first middle layer is made of ZnSe, and the first shell is made of ZnS.
2. The qd-led system of claim 1, wherein the qd-material unit is a qd-cladding layer cladding on the outer surface of the excitation light source.
3. The quantum dot light system of claim 1, wherein the quantum dot material unit is a quantum dot membrane.
4. The system of claim 1, wherein the quantum dot material unit further comprises a second quantum dot, the second quantum dot comprising a second core, a second interlayer encapsulating an outer surface of the second core, and a second shell encapsulating an outer surface of the second interlayer, the second core comprising CdSe, the second interlayer comprising ZnTe, and the second shell comprising ZnS.
5. The quantum dot light system of claim 1, wherein the quantum dot material unit further comprises a third quantum dot, the third quantum dot comprises a third core, a third shell coated on an outer surface of the third core, the material of the third core comprises CdSe, and the material of the third shell comprises ZnSe.
6. The quantum dot light system of claim 1, wherein the quantum dot material unit further comprises a fourth quantum dot, the fourth quantum dot comprising a fourth core, a fourth shell coated on an outer surface of the fourth core, the material of the fourth core comprising CdSe, and the material of the fourth shell comprising ZnTe.
7. The qd-LED system of claim 1, wherein the excitation light source is an LED.
8. The system of any of claims 1-7, wherein the light emitted by the system of quantum dots is white light.
9. A display device comprising the quantum dot light system of any one of claims 1-8.
10. The display device according to claim 9, wherein the display device is a liquid crystal display device.
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