CN114005904A - Flexible copper indium gallium selenide solar cell and preparation method thereof - Google Patents
Flexible copper indium gallium selenide solar cell and preparation method thereof Download PDFInfo
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- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
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Abstract
本发明提供了一种柔性铜铟镓硒太阳能电池及其制备方法，所述电池包括柔性金属衬底以及在柔性金属衬底上依次设置的绝缘阻挡层、金属背电极层、铜铟镓硒吸收层、缓冲层、窗口层和金属顶电极层；其中，所述绝缘阻挡层中掺杂有氧化钠。本发明的技术方案，在柔性金属衬底上先沉积掺杂有氧化钠的绝缘阻挡层，然后再依次制备背电极层和CIGS吸收层，Na元素以氧化钠的形式存在于绝缘阻挡层中，可以有效地在CIGS吸收层中掺入Na又避免Na元素过量掺入，提高电池的光电转换效果；另外，该绝缘阻挡层还可以阻止柔性金属衬底中的金属元素扩散至CIGS吸收层，避免金属元素的扩散导致对CIGS吸收层产生的不良影响。
The invention provides a flexible copper indium gallium selenide solar cell and a preparation method thereof. The battery comprises a flexible metal substrate and an insulating barrier layer, a metal back electrode layer and a copper indium gallium selenide absorption layer which are sequentially arranged on the flexible metal substrate layer, buffer layer, window layer and metal top electrode layer; wherein, the insulating barrier layer is doped with sodium oxide. In the technical scheme of the present invention, an insulating barrier layer doped with sodium oxide is first deposited on a flexible metal substrate, and then a back electrode layer and a CIGS absorption layer are prepared in sequence, and Na element exists in the insulating barrier layer in the form of sodium oxide, It can effectively dope Na in the CIGS absorption layer and avoid excessive doping of Na element to improve the photoelectric conversion effect of the battery; in addition, the insulating barrier layer can also prevent the metal elements in the flexible metal substrate from diffusing to the CIGS absorption layer, avoiding Diffusion of metallic elements leads to adverse effects on the CIGS absorber layer.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a flexible copper indium gallium selenide solar cell and a preparation method thereof.
Background
Copper Indium Gallium Selenide (CIGS) thin film solar cells are thin film photovoltaic technologies with high conversion rates, and laboratory-level conversion efficiency on glass substrates has broken through 23.4%. The small-area cell efficiency of the CIGS thin-film solar cell based on the flexible substrate is up to 20.8%, and the light module not only widens the application range of the solar cell, but also reduces the power generation cost because the light module is convenient to use a roll-to-roll process.
The high conversion rate of the CIGS thin-film solar cell requires about 0.1% of Na element to be doped in the CIGS absorption layer. For rigid soda-lime glass substrates, Na is derived from sodium at the growth temperature of the CIGS absorberThe lime glass substrate diffuses out through the Mo back electrode layer into the growing CIGS layer. The effect of Na on the electronic and structural aspects of the CIGS absorber is as follows: 1) improving growth of CIGS films, 2) incorporation into CIGS lattices to form NaInSe2And 3) passivating the donor type defect InCn at the grain boundary to NaCn, and 4) diffusing to form neutral OSe due to the diffusion of Na along with the diffusion of O, thereby increasing the net acceptor defect, enhancing the P-type conductivity, reducing the recombination of photon-generated carriers and enhancing the photon-generated current.
The substrate of the flexible solar cell is preferably a flexible metal substrate or a flexible polymer substrate, which, unlike rigid soda lime glass substrates, do not contain Na element. In order to optimize the performance of solar cells on these Na-free flexible substrates, it is necessary to consider how to incorporate Na in the CIGS absorber layer, and the existing solutions are mainly: 1) firstly depositing a Na metal preset layer on a flexible substrate, and then sequentially preparing a back electrode layer and a CIGS absorption layer; 2) firstly depositing a Na metal preset layer after preparing a back electrode layer on the flexible substrate, and then preparing a CIGS absorption layer; 3) and after preparing the back electrode layer on the flexible substrate, depositing a Na metal preset layer in the process of preparing the CIGS absorption layer by using a co-evaporation method. Na metal is relatively active metal, the three methods are easy to enable Na element to be doped excessively, Na can prevent Cu, In and Ga from diffusing, when the Na element is excessive, a CIGS absorbing layer is formed into a film layer with smaller crystal grains and poorer orientation degree, Na atoms occupying Cu lattice positions are increased, P-type conductivity is weakened, photogenerated carrier recombination at the crystal grain boundaries is enhanced, the photogenerated carrier is reduced, and the photoelectric conversion rate of the cell is low.
Therefore, how to dope Na in the CIGS absorber layer and avoid excessive doping of Na element are problems to be solved.
Disclosure of Invention
In view of the defects in the prior art, the invention provides a flexible copper indium gallium selenide solar cell and a preparation method thereof, and aims to solve the problem that how to dope Na in a CIGS absorption layer and avoid excessive doping of Na element are needed to be solved.
In order to achieve the purpose, the invention adopts the following technical scheme:
a flexible copper indium gallium selenide solar cell comprises a flexible metal substrate, and an insulating barrier layer, a metal back electrode layer, a copper indium gallium selenide absorption layer, a buffer layer, a window layer and a metal top electrode layer which are sequentially arranged on the flexible metal substrate; wherein the insulating barrier layer is doped with sodium oxide.
Preferably, the mass percentage of the sodium oxide in the insulation barrier layer is 12-18%.
Preferably, the material of the insulation barrier layer is Al2O3、SiO2、Si3N4Or SiOxNyWherein x is>0，y>0。
Preferably, the thickness of the flexible metal substrate is 20 to 100 μm, the thickness of the insulating barrier layer is 0.2 to 3 μm, the thickness of the metal back electrode layer is 300 to 1500nm, the thickness of the copper indium gallium selenide absorption layer is 1 to 2 μm, the thickness of the buffer layer is 20 to 100nm, the thickness of the window layer is 50 to 100nm, and the thickness of the metal top electrode layer is 6 to 10 μm.
Preferably, the flexible metal substrate is a stainless steel substrate, the metal back electrode layer is a molybdenum electrode layer, the buffer layer is a cadmium sulfide buffer layer, and the window layer comprises an intrinsic zinc oxide layer and an aluminum-doped zinc oxide layer which are sequentially arranged.
Preferably, the molybdenum electrode layer comprises a first molybdenum thin film layer and a second molybdenum thin film layer which are arranged in sequence; the thickness of the second molybdenum thin film layer is larger than that of the first molybdenum thin film layer, and the density of the second molybdenum thin film layer is larger than that of the first molybdenum thin film layer.
Preferably, an antireflection layer is further arranged between the window layer and the metal top electrode layer, and the thickness of the antireflection layer is 70 nm-120 nm.
The invention also provides a preparation method of the flexible copper indium gallium selenide solar cell, which comprises the following steps:
s10, providing a flexible metal substrate, and preparing and forming an insulating barrier layer doped with sodium oxide on the flexible metal substrate by applying a magnetron sputtering process;
s20, preparing and forming a metal back electrode layer on the insulation barrier layer by applying a magnetron sputtering process;
s30, preparing and forming a copper indium gallium selenide light absorption layer on the metal back electrode layer by applying a co-evaporation process;
s40, preparing and forming a buffer layer on the CIGS light absorption layer by applying a chemical water bath process;
s50, preparing and forming a window layer on the buffer layer by applying a magnetron sputtering process;
s60, preparing and forming a metal top electrode layer on the window layer by applying a magnetron sputtering process to obtain the flexible copper indium gallium selenide solar cell.
Preferably, the step of preparing and forming the insulating barrier layer doped with sodium oxide on the flexible metal substrate by applying a magnetron sputtering process comprises: using a reactive magnetron sputtering process and soda-lime glass as a target material, thereby preparing SiO doped with sodium oxide on the flexible metal substrate2An insulating barrier layer.
Preferably, the step of preparing and forming the insulating barrier layer doped with sodium oxide on the flexible metal substrate by applying a magnetron sputtering process comprises: and (2) using a double-target medium-frequency reactive magnetron sputtering process, wherein one target is selected as a target capable of obtaining a main body material of the insulating barrier layer through a sputtering reaction, and the other target is selected as a target capable of obtaining a dopant sodium oxide through the sputtering reaction, so that the insulating barrier layer doped with the sodium oxide is prepared and obtained on the flexible metal substrate.
According to the flexible copper indium gallium selenide solar cell and the preparation method thereof provided by the embodiment of the invention, the insulating barrier layer doped with sodium oxide is firstly deposited on the flexible metal substrate, and then the back electrode layer and the CIGS absorption layer are sequentially prepared, and the technical effects obtained by the flexible copper indium gallium selenide solar cell comprise that:
(1) na element exists in the insulating barrier layer in the form of sodium oxide, so that Na can be effectively doped in the subsequent preparation of the CIGS absorbing layer, excessive doping of the Na element is avoided, the performance of the CIGS absorbing layer can be improved, and the photoelectric conversion effect of the cell is improved;
(2) the insulating barrier layer is arranged on the flexible metal substrate, so that metal elements in the flexible metal substrate can be prevented from diffusing to the CIGS absorption layer, and adverse effects on the CIGS absorption layer caused by diffusion of the metal elements are avoided.
Drawings
Fig. 1 is a schematic structural diagram of a flexible copper indium gallium selenide solar cell in an embodiment of the invention;
fig. 2 is a flow chart of a process for manufacturing a flexible copper indium gallium selenide solar cell in an embodiment of the invention;
fig. 3 is a current-voltage characteristic curve of a flexible copper indium gallium selenide solar cell in an embodiment of the invention;
fig. 4 is a current-voltage characteristic curve of the flexible copper indium gallium selenide solar cell in the comparative example of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
The embodiment of the invention firstly provides a flexible copper indium gallium selenide solar cell, as shown in figure 1, the flexible copper indium gallium selenide solar cell comprises a flexible metal substrate 1, and an insulating barrier layer 2, a metal back electrode layer 3, a copper indium gallium selenide absorption layer 4, a buffer layer 5, a window layer 6 and a metal top electrode layer 7 which are sequentially arranged on the flexible metal substrate 1, wherein the insulating barrier layer 2 is doped with sodium oxide. The Na element exists in the insulating barrier layer in the form of sodium oxide, so that Na can be effectively doped in the subsequent preparation of the CIGS absorbing layer, excessive doping of the Na element is avoided, the performance of the CIGS absorbing layer can be improved, and the photoelectric conversion effect of the cell is improved.
For the substrate of the flexible solar cell, the flexible metal substrate has the advantages of higher thermal stability and lower cost compared with the flexible polymer substrate, and therefore, the substrate of the flexible solar cell is more preferably the flexible metal substrate. However, in a flexible metal substrate, such as a stainless steel substrate, Fe, Cr, and other elements in the flexible metal substrate are easily diffused into the CIGS layer during the high-temperature preparation of the CIGS absorber, which may affect the crystal quality of the CIGS film layer and reduce the overall performance of the device. Therefore, how to prevent the metal elements in the flexible metal substrate from diffusing into the CIGS absorber is also a problem to be solved. In the embodiment of the invention, the insulating barrier layer is arranged on the flexible metal substrate, so that the metal elements in the flexible metal substrate can be prevented from diffusing to the CIGS absorption layer, and the adverse effect on the CIGS absorption layer caused by the diffusion of the metal elements is avoided.
In a preferred embodiment, the content of sodium oxide in the insulation barrier layer is 12% to 18% by mass, and preferably 15% by mass. The insulating barrier layer is made of Al2O3、SiO2、Si3N4Or SiOxNyWherein x is>0，y>0. The insulating barrier layer has a component structure similar to soda-lime glass, can effectively dope Na in the CIGS layer and avoid excessive doping of Na element, and better improves the performance of the CIGS absorption layer.
In a specific aspect, the thickness of the flexible metal substrate 1 may be set to 20 μm to 100 μm, for example, 20 μm, 30 μm, 50 μm, 80 μm, or 100 μm. The thickness of the insulating barrier layer 2 may be set to 0.2 μm to 3 μm, for example, 0.2 μm, 0.5 μm, 0.8 μm, 1 μm, 1.5 μm, 1.8 μm, 2 μm, 2.5 μm, 2.8 μm, or 3 μm. The thickness of the metal back electrode layer 3 may be set to 300nm to 1500nm, for example, 300nm, 400nm, 500nm, 800nm, 1000nm, 1200nm, or 1500 nm. The thickness of the CIGS absorbing layer 4 may be set to 1 μm to 2 μm, for example, 1 μm, 1.2 μm, 1.5 μm, 1.8 μm, or 2 μm. The thickness of the buffer layer 5 may be set to 20nm to 100nm, for example, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or 100 nm. The thickness of the window layer 6 is 50nm to 100nm, for example, 50nm, 60nm, 70nm, 80nm, 90nm, or 100 nm. The thickness of the metal top electrode layer 7 is 6 μm to 10 μm, for example, 6 μm, 6.5 μm, 7 μm, 7.5 μm, 8 μm, 8.5 μm, 9 μm, 9.5 μm, or 10 μm.
In a preferred scheme, the flexible metal substrate 1 is a stainless steel substrate, the metal back electrode layer 3 is a molybdenum (Mo) electrode layer, the buffer layer 5 is a cadmium sulfide (CdS) buffer layer, and the window layer 6 includes an intrinsic zinc oxide (i-ZnO) layer 61 and an aluminum-doped zinc oxide (AZO) layer 62 which are sequentially disposed. The metal top electrode layer 7 is a first nickel metal layer, an aluminum metal layer and a second nickel metal layer which are deposited in sequence.
In a further preferred embodiment, as shown in fig. 1, the molybdenum electrode layer 3 is a double molybdenum electrode layer, and includes a first molybdenum thin film layer 31 and a second molybdenum thin film layer 32, which are sequentially disposed. The thickness of the second molybdenum thin film layer 32 is greater than that of the first molybdenum thin film layer 31, and the density of the second molybdenum thin film layer 32 is greater than that of the first molybdenum thin film layer 31. The density of the first molybdenum thin film layer 31 is relatively small, and a loose molybdenum thin film layer is formed, and the density of the loose molybdenum thin film layer can be set to be 8g/cm3～9.5g/cm3The thickness of (b) may be set in the range of 100nm to 150 nm. The second molybdenum thin film layer 32 has a relatively high density, forming a dense molybdenum thin film layer, the density of which can be set at 9.5g/cm3～10.3g/cm3The thickness thereof may be set in the range of 200nm to 1400 nm.
In a further preferable scheme, as shown in fig. 1, the flexible copper indium gallium selenide solar cell further includes an antireflection layer 8, and the antireflection layer 8 is disposed between the window layer 6 and the metal top electrode layer 7. The material of the antireflective layer 8 is preferably magnesium fluoride, and the thickness of the antireflective layer 8 is preferably 70nm to 120nm, for example 70nm, 80nm, 90nm, 100nm, 110nm or 120 nm.
The embodiment of the invention also provides a preparation method of the flexible copper indium gallium selenide solar cell, and with reference to fig. 2 and fig. 1, the preparation method comprises the following steps:
s10, providing a flexible metal substrate 1, and preparing and forming the insulating barrier layer 2 doped with sodium oxide on the flexible metal substrate 1 by applying a magnetron sputtering process.
In a specific scheme, the flexible metal substrate 1 is firstly cleaned to remove organic pollutants and dust on the surface of the flexible metal substrate 1, and then the insulating barrier layer 2 doped with sodium oxide is deposited by sputtering.
The flexible metal substrate 1 is a flexible metal thin film made of, for example, Fe, Mo, Al, Ti, or the like, and preferably has a thickness of 20 μm to 100 μm.
The preparation of the insulating barrier layer 2 doped with sodium oxide by using the magnetron sputtering process can be carried out in the following manner:
(1) using a reactive magnetron sputtering process and soda-lime glass as a target material, thereby preparing SiO doped with sodium oxide on the flexible metal substrate 12An insulating barrier layer 2.
(2) One of the target materials is selected as the target material which can obtain the main body material of the insulating barrier layer through the sputtering reaction, particularly Al can be obtained through the sputtering reaction2O3、SiO2、Si3N4Or SiOxNyThe target material of (1); another target is selected to be a target capable of obtaining a dopant sodium oxide by a sputtering reaction, thereby preparing the insulating barrier layer 2 doped with sodium oxide on the flexible metal substrate 1.
And S20, preparing and forming a metal back electrode layer 3 on the insulating barrier layer 2 by applying a magnetron sputtering process.
The metal back electrode layer 3 is preferably a molybdenum electrode layer 3. In a specific technical solution, as shown in fig. 1, the molybdenum electrode layer 3 is a double molybdenum electrode layer, and includes a first molybdenum thin film layer 31 and a second molybdenum thin film layer 32 which are sequentially disposed. Wherein, a molybdenum target is used, the density and the thickness of the molybdenum thin film layer are controlled by controlling the sputtering power and the pressure of the reaction chamber, in the embodiment of the invention, the thickness of the second molybdenum thin film layer 32 is controlled to be larger than the thickness of the first molybdenum thin film layer 31The density of the second molybdenum thin film layer 32 is greater than that of the first molybdenum thin film layer 31. The density of the first molybdenum thin film layer 31 is relatively small, and a loose molybdenum thin film layer is formed, and the density of the loose molybdenum thin film layer can be set to be 8g/cm3～9.5g/cm3The thickness of (b) may be set in the range of 100nm to 150 nm. The second molybdenum thin film layer 32 has a relatively high density, forming a dense molybdenum thin film layer, the density of which can be set at 9.5g/cm3～10.3g/cm3The thickness thereof may be set in the range of 200nm to 1400 nm.
S30, preparing the CIGS light absorption layer 4 on the metal back electrode layer 3 by applying a co-evaporation process.
S40, preparing and forming a buffer layer 5 on the CIGS light absorption layer 4 by applying a chemical water bath process.
Wherein the buffer layer 5 is preferably a cadmium sulfide (CdS) buffer layer.
And S50, preparing and forming a window layer 6 on the buffer layer 5 by applying a magnetron sputtering process.
In a preferred embodiment, as shown in fig. 1, the window layer 6 includes an intrinsic zinc oxide (i-ZnO) layer 61 and an aluminum-doped zinc oxide (AZO) layer 62, which are sequentially disposed.
The intrinsic zinc oxide (i-ZnO) layer 61 is sputtered by firstly performing low-power sputtering and then performing high-power sputtering, and firstly, a loose layer is formed by the low-power sputtering, so that the intrinsic zinc oxide (i-ZnO) layer can be better combined with the CdS buffer layer 5 and is not easy to fall off; the aluminum-doped zinc oxide (AZO) layer 62 is sputtered at a higher power.
S60, preparing and forming a metal top electrode layer 7 on the window layer 6 by applying a magnetron sputtering process, and obtaining the flexible copper indium gallium selenide solar cell.
In a preferred embodiment, the metal top electrode layer 7 includes a nickel metal layer and an aluminum metal layer deposited in sequence.
In a further preferred scheme, as shown in fig. 1, the flexible copper indium gallium selenide solar cell further includes an antireflection layer 8, and the antireflection layer 8 is disposed between the window layer 6 and the metal top electrode layer 7. Sputtering magnesium fluoride (MgF) on the window layer 6 by magnetron sputtering process2) A thin film, forming a magnesium fluoride anti-reflection layer,the metallic top electrode layer 7 is then prepared.
Example 1
The embodiment provides a flexible copper indium gallium selenide solar cell and a preparation method thereof, which are performed by combining with a schematic structural diagram shown in fig. 1 and referring to the following steps:
(1) a50 μm thick stainless steel (model SS430) substrate was used. Firstly, ultrasonically cleaning the stainless steel substrate by using acetone, alcohol and deionized water in sequence, removing organic stains and dust on the surface of the stainless steel substrate, and baking in an oven after cleaning to remove water vapor.
(2) Pumping the vacuum chamber of the magnetron sputtering equipment to 5 multiplied by 10-3And starting to work after Pa. And carrying out magnetron sputtering on the cleaned stainless steel substrate, wherein the sputtering target is a soda-lime glass target (the target size is 100mm multiplied by 10mm) with the sodium oxide content of 15%, the working gas is argon, the reaction gas is oxygen, and the sputtering is carried out in a constant-current mode. During sputtering, the pressure in the vacuum chamber was maintained at 0.06Pa to 0.07Pa, and the flow rates of oxygen and argon were controlled by a flow meter (RRG-1). The deposition thickness of the film is controlled at 500nm, the deposition time is 15min, and the SiO doped with sodium oxide is prepared2An insulating barrier layer.
(3) The double-layer Mo back electrode is prepared by utilizing direct-current magnetron sputtering, the purity of the used Mo target material is 99.95 percent, wherein the power density of the first layer is 2W/cm2The pressure is 2.0Pa, and the thickness is 200 nm; the power density of the second layer is 4W/cm2The pressure was 0.5Pa and the thickness was 600 nm.
(4) And depositing and preparing the copper indium gallium selenide light absorbing layer on the double-layer Mo back electrode by adopting a three-step co-evaporation method. The specific process of the step is carried out according to the prior art, and the copper indium gallium selenide light absorption layer with the thickness of 1 mu m is prepared.
(5) And preparing and forming a cadmium sulfide buffer layer on the CIGS light absorption layer by adopting a chemical water bath process. The method comprises the following specific steps:
weighing 0.184 g of chromium sulfate, placing the chromium sulfate in 60mL of deionized water, and stirring for 15min, wherein the solution is numbered as A; 5.694 g of thiourea is weighed and placed in 150mL of deionized water to be stirred for 15min, and the solution is numbered as B; 425mL of deionized water is weighed and placed in a reaction vessel; weighing 45mL of ammonia water in a beaker; mixing ammonia water and the solution A, pouring the mixture into a reaction vessel, flushing the sample obtained in the step S20 with the solution B, collecting the solution B of the flushed sample into the reaction vessel, placing the sample with the surface facing downwards into the reaction vessel, placing the sample into a water bath (the set temperature of the water bath is 67 ℃, stirring is carried out by using a magnetic stirrer, and the heating power is 500W) to react for 9min, taking out the sample, quickly flushing with a large amount of deionized water, and baking for 2 min in an oven at 160 ℃. Preferably, in this embodiment, the thickness of the cadmium sulfide buffer layer 15 is set to 50 nm.
(6) And preparing and forming a window layer on the buffer layer by applying a magnetron sputtering process. The window layer 6 comprises an intrinsic zinc oxide (i-ZnO) layer and an aluminum-doped zinc oxide (AZO) layer which are sequentially arranged.
Specifically, when the i-ZnO layer is sputtered, the flow rate of argon gas is 20sccm, the flow rate of oxygen is 2.0sccm, sputtering is carried out for 4 times under the condition that the sputtering power is 120W, and then the power is adjusted to 220W for 16 times; when sputtering the AZO layer, the substrate temperature was heated to 90 ℃, the argon flow rate was 20sccm, the hydrogen flow rate was 2.5sccm, and sputtering was performed 12 times at a sputtering power of 750W.
(7) Sputtering MgF on the window layer by a magnetron sputtering process2And forming a magnesium fluoride anti-reflection layer. The specific process of the step is carried out according to the prior art, and the antireflection layer with the thickness of 100nm is prepared.
(8) And sputtering and depositing a metal top electrode on the magnesium fluoride antireflection layer. In this embodiment, the metal top electrode layer includes a first nickel metal layer, an aluminum metal layer, and a second nickel metal layer, and the thicknesses are 100nm, 8 μm, and 100nm in this order.
Based on the above preparation process, the flexible copper indium gallium selenide solar cell shown in fig. 1 is prepared and obtained in the embodiment.
Example 2
Example 2 differs from example 1 in that: the process for preparing the insulating barrier layer in the step (2) is different, and the rest of the processes are completely the same as those of the embodiment 1, and thus, the description is omitted. The step (2) of this embodiment is specifically as follows:
dual target intermediate frequency reactive magnetron sputtering depositionPreparing a soda-lime glass insulating barrier layer by equipment, wherein the substrate temperature is 250-300 ℃; the frequency of the medium-frequency power supply is 40kHz, the medium-frequency power supply works in a constant power mode, the maximum output power is 10kW, the maximum output voltage is 1100V, and the maximum output current is 35A. One of the target materials used was a 140mm x 600mm Si target for the preparation of SiO2An insulating material; the other target material adopts a soda-lime glass target material to obtain a dopant of sodium oxide, Ar is used as sputtering gas, and O2Respectively filling the reaction gases into a vacuum chamber and then sputtering and depositing to prepare and obtain SiO doped with sodium oxide2An insulating barrier layer.
Comparative example 1
Comparative example 1 differs from example 1 in that: comparative example 1 step (2) as in example 1 was omitted, i.e., the molybdenum electrode layer and the subsequent respective structural layers were directly prepared without preparing the insulating barrier layer on the stainless steel substrate.
In this example, the flexible copper indium gallium selenide solar cells prepared in example 1 and comparative example 1 were subjected to electrical tests, respectively. Fig. 3 is a voltage-current characteristic curve of the flexible copper indium gallium selenide solar cell obtained in example 1; fig. 4 is a current-voltage characteristic curve of the flexible copper indium gallium selenide solar cell obtained in comparative example 1.
As shown in FIG. 3, in the flexible CIGS solar cell of example 1, an insulating barrier layer doped with sodium oxide is deposited on a flexible metal substrate, and the open-circuit voltage (Voc) is 688mV and the short-circuit current (Isc) is 35.2mA/cm2The Fill Factor (FF) was 68.8% and the efficiency (Eff) was 16.7%.
As shown in FIG. 4, the flexible CIGS solar cell of comparative example 1, in which the insulating barrier layer doped with sodium oxide was not disposed on the flexible metal substrate, had an open circuit voltage (Voc) of 653mV and a short circuit current (Isc) of 37.8mA/cm2The Fill Factor (FF) was 65.1% and the efficiency (Eff) was 16.1%.
Based on the test results, it can be known that the flexible copper indium gallium selenide solar cell provided by the embodiment of the invention deposits the insulating barrier layer doped with sodium oxide on the flexible metal substrate, so that the open-circuit voltage of the cell can be increased and the conversion efficiency of the cell can be improved.
In summary, according to the flexible copper indium gallium selenide solar cell and the preparation method thereof provided by the embodiment of the invention, the insulating barrier layer doped with sodium oxide is deposited on the flexible metal substrate, and then the back electrode layer and the CIGS absorption layer are sequentially prepared, and the Na element exists in the insulating barrier layer in the form of sodium oxide, so that the Na element can be effectively doped and the excessive doping of the Na element can be avoided during the subsequent preparation of the CIGS absorption layer, the performance of the CIGS absorption layer can be improved, and the photoelectric conversion effect of the cell can be improved; in addition, the insulating barrier layer is arranged on the flexible metal substrate, so that metal elements in the flexible metal substrate can be prevented from diffusing to the CIGS absorption layer, and adverse effects on the CIGS absorption layer caused by diffusion of the metal elements are avoided.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (10)
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