CN114002865A - 含金属层z切薄膜铌酸锂材料结构 - Google Patents
含金属层z切薄膜铌酸锂材料结构 Download PDFInfo
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- CN114002865A CN114002865A CN202111279055.7A CN202111279055A CN114002865A CN 114002865 A CN114002865 A CN 114002865A CN 202111279055 A CN202111279055 A CN 202111279055A CN 114002865 A CN114002865 A CN 114002865A
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- lithium niobate
- thin film
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本发明公开了一种含金属层Z切薄膜铌酸锂材料结构，该材料结构自下到上依次包括：衬底、金属层、缓冲层、Z切铌酸锂薄膜，满足Z切薄膜铌酸锂集成电光调控芯片制造需求。本发明在铌酸锂薄膜和衬底之间直接加入金属层，在电光调控结构应用中，金属层可直接作为一个电极层置于薄膜铌酸锂光波导正下方，与置于薄膜铌酸锂光波导正上方电极构建电场，对夹在上下电极中间的薄膜铌酸锂光波导进行电光调控，调控电极间距不受限于工艺精度，切电光重叠因子比传统结构更高，电光调控效率更高。
Description
技术领域
本发明属于光电集成芯片材料领域，特别是一种含金属层Z切薄膜铌酸锂材料结构。
背景技术
传统Z切薄膜铌酸锂(LN)材料结构，是由Z切铌酸锂薄膜通过键合层直接与衬底集成实现，在电光调控结构应用中，需要信号电极和地电极中的一个电极置于Z切薄膜铌酸锂光波导正上方、另外一个电极置于光波导旁边构建电场，实现对Z切薄膜铌酸锂光波导的电光调控。在这种结构中，为了提高电光调控效率，需要信号电极和地电极之间的间距尽量小，对芯片加工精度要求较高，而且啁啾效应严重。
发明内容
本发明的目的在于提供一种含金属层Z切薄膜铌酸锂材料结构，极大降低电极间距工艺精度要求和啁啾效应，满足Z切薄膜铌酸锂电光调控器件芯片制造需求。
实现本发明目的的技术解决方案为：一种含金属层Z切薄膜铌酸锂材料结构，该材料结构自下到上依次包括衬底、金属层、缓冲层和Z切铌酸锂薄膜。
进一步的，所述缓冲层为二氧化硅、氮化硅、氧化铝或聚合物。
进一步的，所述衬底为硅、铌酸锂、碳化硅、蓝宝石或氮化铝。
进一步的，所述金属层作为一个电极层置于Z切铌酸锂薄膜正下方，与置于Z切铌酸锂薄膜正上方电极构建电场。
相比现有技术，本发明具有以下有益效果：(1)本发明提供了一种含金属层Z切薄膜铌酸锂材料结构，在铌酸锂薄膜和衬底之间直接加入金属层；在电光调控结构应用中，金属层可直接作为一个电极层置于薄膜铌酸锂光波导正下方，与置于薄膜铌酸锂光波导正上方电极构建电场，对夹在上下电极中间的薄膜铌酸锂光波导进行电光调控，调控电极间距不受限于工艺精度，切电光重叠因子比传统结构更高，电光调控效率更高。(2)本发明的含金属层Z切薄膜铌酸锂材料结构在马赫-增德尔干涉仪型强度调制器应用中可以实现对称结构，非常有利于降低啁啾效应。
附图说明
图1为本发明含金属层Z切薄膜铌酸锂材料结构的侧视示意图。
图中各标号的含义为：1、衬底；2、金属层；3、缓冲层；4、铌酸锂薄膜。
具体实施方式
为进一步了解本发明的内容，结合附图对本发明作详细描述。
如图1所示，本发明的一种含金属层Z切薄膜铌酸锂材料结构，自下到上依次包括衬底1、金属层2、缓冲层3和Z切铌酸锂薄膜4。
所述缓冲层3为二氧化硅、氮化硅、氧化铝或聚合物；所述衬底1为硅、铌酸锂、碳化硅、蓝宝石或氮化铝；所述金属层2厚度为百纳米级别。
所述的含金属层Z切薄膜铌酸锂材料结构，在Z切铌酸锂薄膜4和衬底1之间直接加入金属层2。在电光调控结构应用中，金属层2可直接作为一个电极层置于薄膜铌酸锂光波导正下方，与置于薄膜铌酸锂光波导正上方电极构建电场，对夹在上下电极中间的薄膜铌酸锂光波导进行电光调控，调控电极间距不受限于工艺精度，切电光重叠因子比传统结构更高，电光调控效率更高。而且，在马赫-增德尔干涉仪型强度调制器应用中，本发明结构可以实现对称结构，非常有利于降低啁啾效应。
Claims (4)
1.一种含金属层Z切薄膜铌酸锂材料结构，其特征在于，该材料结构自下到上依次包括衬底(1)、金属层(2)、缓冲层(3)和Z切铌酸锂薄膜(4)。
2.根据权利要求1所述的含金属层Z切薄膜铌酸锂材料结构，其特征在于，所述缓冲层(3)为二氧化硅、氮化硅、氧化铝或聚合物。
3.根据权利要求1所述的含金属层Z切薄膜铌酸锂材料结构，其特征在于，所述衬底(1)为硅、铌酸锂、碳化硅、蓝宝石或氮化铝。
4.根据权利要求1所述的含金属层Z切薄膜铌酸锂材料结构，其特征在于，所述金属层(2)作为一个电极层置于Z切铌酸锂薄膜(4)正下方，与置于Z切铌酸锂薄膜(4)正上方电极构建电场。
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003015098A (ja) * | 2001-04-26 | 2003-01-15 | Taiyo Yuden Co Ltd | 下部電極及びそれを利用した光学素子 |
| CN106842760A (zh) * | 2017-03-08 | 2017-06-13 | 暨南大学 | 一种用阵列电极进行光束偏转的铌酸锂波导及制作方法 |
| CN107065232A (zh) * | 2016-12-12 | 2017-08-18 | 天津津航技术物理研究所 | 基于铌酸锂薄膜的宽带行波电光调制器及其制备方法 |
| CN107957630A (zh) * | 2016-10-18 | 2018-04-24 | 天津领芯科技发展有限公司 | 铌酸锂薄膜多功能集成光学器件及其制造方法 |
| CN107957631A (zh) * | 2016-10-18 | 2018-04-24 | 天津领芯科技发展有限公司 | 一种高调制效率的铌酸锂薄膜电光调制器 |
| US20200363693A1 (en) * | 2019-05-17 | 2020-11-19 | Shanghai Jiao Tong University | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof |
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2021
- 2021-10-31 CN CN202111279055.7A patent/CN114002865A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003015098A (ja) * | 2001-04-26 | 2003-01-15 | Taiyo Yuden Co Ltd | 下部電極及びそれを利用した光学素子 |
| CN107957630A (zh) * | 2016-10-18 | 2018-04-24 | 天津领芯科技发展有限公司 | 铌酸锂薄膜多功能集成光学器件及其制造方法 |
| CN107957631A (zh) * | 2016-10-18 | 2018-04-24 | 天津领芯科技发展有限公司 | 一种高调制效率的铌酸锂薄膜电光调制器 |
| CN107065232A (zh) * | 2016-12-12 | 2017-08-18 | 天津津航技术物理研究所 | 基于铌酸锂薄膜的宽带行波电光调制器及其制备方法 |
| CN106842760A (zh) * | 2017-03-08 | 2017-06-13 | 暨南大学 | 一种用阵列电极进行光束偏转的铌酸锂波导及制作方法 |
| US20200363693A1 (en) * | 2019-05-17 | 2020-11-19 | Shanghai Jiao Tong University | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof |
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