CN114000194A - Cobalt-doped Q spinel crystal capable of being used for 1.5-micron wave band high repetition frequency modulation - Google Patents
Cobalt-doped Q spinel crystal capable of being used for 1.5-micron wave band high repetition frequency modulation Download PDFInfo
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- CN114000194A CN114000194A CN202111225407.0A CN202111225407A CN114000194A CN 114000194 A CN114000194 A CN 114000194A CN 202111225407 A CN202111225407 A CN 202111225407A CN 114000194 A CN114000194 A CN 114000194A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1631—Solid materials characterised by a crystal matrix aluminate
Abstract
The invention discloses a cobalt-doped Q spinel crystal for high repetition frequency modulation of a 1.5-micron waveband, which is prepared from the following components in a chemical dose ratio: co2O3x%:MgO(1‑x%):3Al2O3The proportion of the cobalt oxide, the magnesium oxide and the aluminum oxide is x percent to 1-x percent to 3, and x = 0-0.5. The invention has the following beneficial effects: when cobalt oxide, magnesium oxide and aluminum oxide are selected to prepare the cobalt-doped Q spinel single crystal, the cobalt-doped Q-switched spinel crystal has high conversion efficiency at a wave band of 1.5 microns and is moderate in cost, the cobalt-doped Q spinel crystal adopts the cobalt oxide, the magnesium oxide and the aluminum oxide as raw materials to prepare the cobalt-doped aluminum-rich spinel which is used as a base material for Q switching of a laser with a wave band of 1.5 microns and is unique in comprehensive property of a passive Q-switched crystal materialGood performance, low production cost, convenient growth, high Q-switching efficiency and capability of realizing high repetition frequency of 500 kHz.
Description
Technical Field
The invention relates to the field of laser communication, in particular to a cobalt-doped Q spinel crystal which can be used for high repetition frequency modulation of a 1.5-micron wave band.
Background
The 1.56 mu m wave band femtosecond pulse laser has wide application value in the fields of laser communication, medical diagnosis, micro-nano processing, precision measurement and the like, particularly, the 1.56 mu m frequency doubling laser can work in the output wave band of the titanium sapphire laser through an optical frequency doubling technology, so that the application scene is further expanded, currently, titanium sapphire oscillators and amplifier products are developed to be mature, and have remarkable index advantages in the aspects of extremely short pulse (<20fs) and ultra-large energy (>1mJ), compared with the titanium sapphire laser, the erbium-doped fiber femtosecond laser product has remarkable cost performance advantages in the aspects of 50-100fs pulse width and <10nJ single pulse energy, and the advantages of high efficiency, maintenance-free performance, strong environmental adaptability and the like of the fiber laser are further synthesized, and the erbium-doped femtosecond fiber laser becomes an ideal substitute light source of the titanium sapphire laser;
because of the problems of diffraction efficiency, complex structure, high-order dispersion and the like of a grating compressor, the development of the CPA technology in a 1.56 mu m wave band is not smooth, in addition, the chirp pulse oscillation technology can be used for directly generating high-energy ultrashort pulses from an oscillator by considering that the pulse repetition frequency is easy to reduce by increasing the length of an optical fiber in a cavity, the separation pulse amplification or coherent pulse synthesis technology is gradually a main means for generating kilowatt average power ultrashort pulses in the 1.03 mu m wave band, the technology distributes energy of seed light based on polarization beam splitting and injects the seed light into a plurality of amplifiers respectively for energy promotion, the peak power of the pulses in the amplifiers can be reduced in proportion, and the nonlinear effect of the amplified pulses is effectively managed. The application fields comprise 1.5 mu m vehicle-mounted laser radar, civil laser ranging and military laser ranging.
The prior art has the following defects: the existing titanium gem mirror body has high production cost, difficult growth, low Q-switching conversion efficiency and poor saturated absorption.
Disclosure of Invention
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: the invention provides a cobalt-doped Q spinel crystal which can be used for 1.5 micron wave band high repetition frequency modulation, and is different from the prior art in that the cobalt-doped Q spinel crystal is prepared by the following dosage ratio: co2O3x%:MgO(1-x%):3Al2O3The proportion of the cobalt oxide, the magnesium oxide and the aluminum oxide is x percent to 1-x percent to 3, and x = 0-0.5.
Preferably, the cobalt-doped Q-spinel crystal is different from two relatively mature crystals MgA1O and LaMgA1O at present, the cobalt-doped aluminum-rich spinel prepared by cobalt oxide, magnesium oxide and aluminum oxide is used as a Q-switching laser crystal and a glass base material, the unique passive Q-switching crystal material overcomes the defect that the comprehensive performance of a Co-ion-doped passive Q-switching crystal material used in the prior art is poor, the defects of high production cost, difficulty in growth and low Q-switching efficiency are improved, part of the crystals have the characteristics of anisotropy and the like, the conversion efficiency is higher than that of a similar product by 20 percent, and the passive Q-switching crystal Co: spinel meets the application requirements, the passively Q-switched crystal material has strong absorption in the near infrared band, the effective saturable absorption band covers 1.3-1.6 mu m, and the passively Q-switched crystal material has good saturable absorption characteristics and is applied to a 1.34 mu m laser, in particular to a passively Q-switched switch of 1.544 mu m human eye safe laser.
The invention also provides a preparation method of the cobalt-doped Q spinel crystal with high repetition frequency modulation and wave band of 1.5 microns, which is different from the prior art and comprises the following steps:
s1: placing raw materials of cobalt oxide, magnesium oxide and aluminum oxide in drying equipment for drying, then placing the raw materials in a mixing cylinder according to the proportion of 1:1:1 for mixing, wherein the drying temperature of the drying equipment is set to be 45 ℃, the drying time is 30min, the rotating speed of the mixing cylinder is set to be 500r/min, and the mixing time is 1.5 h;
s2: putting the mixed raw materials into a die to be pressed into blocks, putting the blocks into a calcining furnace to be sintered, and setting the temperature in the calcining furnace to be 1500-1600 ℃;
s3: placing the sintered material blocks into the steel rail, heating a crucible to melt the material blocks, wherein the heating temperature of the crucible is 2100-2300 ℃;
s4: adopting a pulling method to carry out crystal growth in the crucible, and naturally cooling to room temperature after the growth is finished;
preferably, the pulling method comprises the steps of:
(1) putting a crystal raw material to be grown in a high-temperature-resistant crucible for heating and melting, and adjusting a temperature field in the furnace to enable the upper part of the melt to be in a supercooled state;
(2) putting seed crystals into the crucible through the seed crystal rod, and enabling the seed crystals to be in contact with the surface of the melt;
(3) after the surface of the seed crystal is slightly melted, continuously pulling and rotating the seed crystal rod to ensure that the melt is in a supercooled state and is crystallized on the surface of the seed crystal, and finally generating a cylindrical bulk single crystal on the surface of the seed crystal;
preferably, the cobalt-doped Q spinel crystal has the formula Co: spinel, 1.5 μm pulse output with repetition frequency of 544kHz and pulse width of 8.5 ns.
Compared with the prior art, the invention has the following beneficial effects: when cobalt oxide, magnesium oxide and aluminum oxide are selected to prepare the cobalt-doped Q spinel crystal, the cobalt-doped Q spinel crystal has high rotating efficiency and moderate cost, the cobalt-doped Q spinel crystal is prepared by adopting the cobalt oxide, the magnesium oxide and the aluminum oxide as raw materials and is used as a Q-switching laser crystal and a glass base material, the unique passive Q-switching crystal material has good comprehensive performance, low production cost and convenient growth, and the Q-switching efficiency is high and is higher than the conversion efficiency of a similar product by 20%.
Detailed Description
The present invention is further illustrated by the following examples, which include, but are not limited to, the following examples.
Example 1
The invention provides a cobalt-doped Q spinel crystal capable of being used for 1.5-micron wave band high repetition frequency modulation, which is different from the prior art in that the cobalt-doped Q spinel crystal is prepared from the following components in parts by mole: the proportion of the cobalt oxide, the magnesium oxide and the aluminum oxide is x% to 1-x% to 3, and x = 0-0.5, so that the cobalt-doped Q spinel crystal prepared by the embodiment has high conversion efficiency and low cost;
different from two relatively mature crystals MgA1O and LaMgA1O, the cobalt-doped Q spinel crystal adopts cobalt oxide, magnesium oxide and aluminum oxide as raw materials to prepare cobalt-doped aluminum-rich spinel which is used as a Q-switched laser crystal and a glass base material, the unique passive Q-switched crystal material overcomes the defect that the comprehensive performance of a passive Q-switched crystal material doped with Co ions in the prior art is poor, the problems of high production cost, difficult growth, low Q-switching efficiency, anisotropy and other aspects of partial crystals are improved, the conversion efficiency is 20 percent higher than that of similar products, and the content of the active Q-switched crystal Co: spinel meets the application requirements, the passively Q-switched crystal material has strong absorption in the near infrared band, the effective saturable absorption band covers 1.3-1.6 mu m, and the passively Q-switched crystal material has good saturable absorption characteristics and is applied to a 1.34 mu m laser, in particular to a passively Q-switched switch of 1.544 mu m human eye safe laser.
The invention also provides a preparation method of the cobalt-doped Q spinel crystal with high repetition frequency modulation and wave band of 1.5 microns, which is different from the prior art and comprises the following steps:
s1: placing raw materials of cobalt oxide, magnesium oxide and aluminum oxide in drying equipment for drying, then placing the raw materials in a mixing cylinder according to the proportion of 1:1:1 for mixing, wherein the drying temperature of the drying equipment is set to be 45 ℃, the drying time is 30min, the rotating speed of the mixing cylinder is set to be 500r/min, and the mixing time is 1.5 h;
s2: putting the mixed raw materials into a die to be pressed into blocks, putting the blocks into a calcining furnace to be sintered, and setting the temperature in the calcining furnace to be 1500-1600 ℃;
s3: placing the sintered material blocks into the steel rail, heating a crucible to melt the material blocks, wherein the heating temperature of the crucible is 2100-2300 ℃;
s4: adopting a pulling method to carry out crystal growth in the crucible, and naturally cooling to room temperature after the growth is finished;
the Czochralski method comprises the following steps:
(1) putting a crystal raw material to be grown in a high-temperature-resistant crucible for heating and melting, and adjusting a temperature field in the furnace to enable the upper part of the melt to be in a supercooled state;
(2) putting seed crystals into the crucible through the seed crystal rod, and enabling the seed crystals to be in contact with the surface of the melt;
(3) after the surface of the seed crystal is slightly melted, continuously pulling and rotating the seed crystal rod to ensure that the melt is in a supercooled state and is crystallized on the surface of the seed crystal, and finally generating a cylindrical bulk single crystal on the surface of the seed crystal;
the chemical formula of the cobalt-doped Q spinel crystal is Co: spinel, 1.5 μm pulse output with repetition frequency of 544kHz and pulse width of 8.5 ns.
Example 2
The invention provides a cobalt-doped Q spinel crystal capable of being used for 1.5-micron wave band high-repetition frequency modulation, which is different from the prior art in that the cobalt-doped Q spinel crystal is prepared from the following components in parts by weight: 55 parts of cobalt oxide, 25 parts of magnesium oxide and 35 parts of aluminum oxide, wherein the ratio of the cobalt oxide to the magnesium oxide to the aluminum oxide is 1:1:1, and the cobalt-doped Q spinel prepared by the embodiment has high conversion efficiency and moderate cost;
different from two relatively mature crystals MgA1O and LaMgA1O, the cobalt-doped Q spinel crystal adopts cobalt oxide, magnesium oxide and aluminum oxide as raw materials to prepare cobalt-doped aluminum-rich spinel which is used as a Q-switched laser crystal and a glass base material, the unique passive Q-switched crystal material overcomes the defect that the comprehensive performance of a passive Q-switched crystal material doped with Co ions in the prior art is poor, the problems of high production cost, difficult growth, low Q-switching efficiency, anisotropy and other aspects of partial crystals are improved, the conversion efficiency is 20 percent higher than that of similar products, and the content of the active Q-switched crystal Co: spinel meets the application requirements, the passively Q-switched crystal material has strong absorption in the near infrared band, the effective saturable absorption band covers 1.3-1.6 mu m, and the passively Q-switched crystal material has good saturable absorption characteristics and is applied to a 1.34 mu m laser, in particular to a passively Q-switched switch of human eye safe laser in the 1.5 mu m band.
The invention also provides a preparation method of the cobalt-doped Q spinel crystal with high repetition frequency modulation and wave band of 1.5 microns, which is different from the prior art and comprises the following steps:
s1: placing raw materials of cobalt oxide, magnesium oxide and aluminum oxide in drying equipment for drying, then placing the raw materials in a mixing cylinder according to the proportion of 1:1:1 for mixing, wherein the drying temperature of the drying equipment is set to be 45 ℃, the drying time is 30min, the rotating speed of the mixing cylinder is set to be 500r/min, and the mixing time is 1.5 h;
s2: putting the mixed raw materials into a die to be pressed into blocks, putting the blocks into a calcining furnace to be sintered, and setting the temperature in the calcining furnace to be 1500-1600 ℃;
s3: placing the sintered material blocks into the steel rail, heating a crucible to melt the material blocks, wherein the heating temperature of the crucible is 2100-2300 ℃;
s4: adopting a pulling method to carry out crystal growth in the crucible, and naturally cooling to room temperature after the growth is finished;
the Czochralski method comprises the following steps:
(1) putting a crystal raw material to be grown in a high-temperature-resistant crucible for heating and melting, and adjusting a temperature field in the furnace to enable the upper part of the melt to be in a supercooled state;
(2) putting seed crystals into the crucible through the seed crystal rod, and enabling the seed crystals to be in contact with the surface of the melt;
(3) after the surface of the seed crystal is slightly melted, continuously pulling and rotating the seed crystal rod to ensure that the melt is in a supercooled state and is crystallized on the surface of the seed crystal, and finally generating a cylindrical bulk single crystal on the surface of the seed crystal;
the chemical formula of the cobalt-doped Q spinel crystal is Co2x%:Mg(1-x%)Al6O12-3X，And 1.5 μm pulse output with repetition frequency of 544kHz and pulse width of 8.5 ns.
Example 3
The invention provides a cobalt-doped Q spinel crystal capable of being used for 1.5-micron wave band high-repetition frequency modulation, which is different from the prior art in that the cobalt-doped Q spinel crystal is prepared from the following components in parts by weight: the proportion of the cobalt oxide, the magnesium oxide and the aluminum oxide is x percent to 1-x percent to 3. The cobalt-doped Q spinel crystal prepared by the embodiment has high conversion efficiency and high cost;
different from two relatively mature crystals MgA1O and LaMgA1O, the cobalt-doped Q spinel crystal adopts cobalt oxide, magnesium oxide and aluminum oxide as raw materials to prepare cobalt-doped aluminum-rich spinel which is used as a Q-switched laser crystal and a glass base material, the unique passive Q-switched crystal material overcomes the defect that the comprehensive performance of a passive Q-switched crystal material doped with Co ions in the prior art is poor, the problems of high production cost, difficult growth, low Q-switching efficiency, anisotropy and other aspects of partial crystals are improved, the conversion efficiency is 20 percent higher than that of similar products, and the content of the active Q-switched crystal Co: spinel meets the application requirements, the passively Q-switched crystal material has strong absorption in the near infrared band, the effective saturable absorption band covers 1.3-1.6 mu m, and the passively Q-switched crystal material has good saturable absorption characteristics and is applied to a 1.34 mu m laser, in particular to a passively Q-switched switch of 1.544 mu m human eye safe laser.
The invention also provides a preparation method of the cobalt-doped Q spinel crystal with high repetition frequency modulation and wave band of 1.5 microns, which is different from the prior art and comprises the following steps:
s1: placing raw materials of cobalt oxide, magnesium oxide and aluminum oxide in drying equipment for drying, then placing the raw materials in a mixing cylinder according to the proportion of 1:1:1 for mixing, wherein the drying temperature of the drying equipment is set to be 45 ℃, the drying time is 30min, the rotating speed of the mixing cylinder is set to be 500r/min, and the mixing time is 1.5 h;
s2: putting the mixed raw materials into a die to be pressed into blocks, putting the blocks into a calcining furnace to be sintered, and setting the temperature in the calcining furnace to be 1500-1600 ℃;
s3: placing the sintered material blocks into the steel rail, heating a crucible to melt the material blocks, wherein the heating temperature of the crucible is 2100-2300 ℃;
s4: adopting a pulling method to carry out crystal growth in the crucible, and naturally cooling to room temperature after the growth is finished;
the Czochralski method comprises the following steps:
(1) putting a crystal raw material to be grown in a high-temperature-resistant crucible for heating and melting, and adjusting a temperature field in the furnace to enable the upper part of the melt to be in a supercooled state;
(2) putting seed crystals into the crucible through the seed crystal rod, and enabling the seed crystals to be in contact with the surface of the melt;
(3) after the surface of the seed crystal is slightly melted, continuously pulling and rotating the seed crystal rod to ensure that the melt is in a supercooled state and is crystallized on the surface of the seed crystal, and finally generating a cylindrical bulk single crystal on the surface of the seed crystal;
the chemical formula of the cobalt-doped Q spinel crystal is Co: spinel, 1.5 μm pulse output with repetition frequency of 544kHz and pulse width of 8.5 ns.
Example 4
Combining with the embodiment 1-3, it can be seen that when cobalt-doped Q spinel crystal is prepared by selecting cobalt oxide, magnesium oxide and aluminum oxide in a ratio of x% to 1-x% and 3, the cobalt-doped Q spinel crystal has high conversion efficiency and moderate cost, and the cobalt-doped Q spinel crystal is prepared by using cobalt oxide, magnesium oxide and aluminum oxide as raw materials, and is used as a Q-switched laser crystal and a glass base material, and the unique passive Q-switched crystal material has good comprehensive performance, low production cost and convenient growth, and has high Q-switched efficiency which is higher than 20% of conversion efficiency of similar products.
The above-mentioned embodiment is only one of the preferred embodiments of the present invention, and any insubstantial changes or modifications made within the spirit and scope of the main design of the present invention will solve the technical problems consistent with the present invention and shall be included in the scope of the present invention.
Claims (11)
1. The cobalt-doped Q spinel crystal for high repetition frequency modulation in a 1.5-micron wave band is characterized by being prepared from the following components in percentage by weight: co2O3x%:MgO(1-x%):3Al2O3The proportion of the cobalt oxide, the magnesium oxide and the aluminum oxide is x percent to 1-x percent to 3, and x = 0-0.5.
2. The cobalt-doped Q-spinel crystal with high repetition frequency modulation and usable for the 1.5-micron waveband of claim 1, is characterized in that the cobalt-doped Q-spinel crystal is prepared from the following components in parts by weight: the proportion of the cobalt oxide, the magnesium oxide and the aluminum oxide is x percent, 1-x percent, 3, and x = 0-0.5.
3. The cobalt-doped Q-spinel crystal with high repetition frequency modulation capability at the wave band of 1.5 microns as claimed in claim 1, wherein the cobalt-doped Q-spinel crystal is prepared from the following molar components: x% cobalt oxide, 1-x% magnesium oxide and 3 parts aluminum oxide.
4. The cobalt-doped Q-spinel crystal with high repetition frequency modulation and usable for the 1.5-micron waveband of claim 1, is characterized in that the cobalt-doped Q-spinel crystal is prepared from the following components in parts by weight: the proportion of the cobalt oxide, the magnesium oxide and the aluminum oxide is x percent to 1-x percent to 3.
5. A method for preparing the cobalt-doped Q-spinel crystal with high repetition frequency modulation in the 1.5 micron waveband according to any one of claims 1 to 4, which is characterized by comprising the following steps:
s1: placing raw materials of cobalt oxide, magnesium oxide and aluminum oxide in drying equipment for drying, and then placing the raw materials into a mixing cylinder for mixing according to the proportion of x percent to 1-x percent to 3, wherein x = 0-0.5;
s2: putting the mixed raw materials into a die to be pressed into blocks, and putting the blocks into a calcining furnace to be sintered;
s3: placing the sintered material blocks into the steel rail, and heating the crucible to melt the material blocks;
s4: and (4) performing crystal growth in the crucible by adopting a pulling method, and naturally cooling to room temperature after the growth is finished.
6. The method as claimed in claim 5, wherein in step S1, the drying temperature of the drying equipment is set to 45 ℃, the drying time is 30min, the rotation speed of the mixing drum is set to 500r/min, and the mixing time is 1.5 h.
7. The method for preparing the cobalt-doped Q-spinel crystal with high repetition frequency modulation capability at the waveband of 1.5 microns as claimed in claim 6, wherein in the step S2, the internal temperature of the calcining furnace is set to be 1500-1600 ℃.
8. The method as claimed in claim 5 or 6, wherein in step S3, the crucible is heated at a temperature of 2100-2300 ℃.
9. The method for preparing the cobalt-doped Q-spinel crystal with high repetition frequency modulation capability at the wave band of 1.5 microns according to claim 5, wherein the Czochralski method comprises the following steps:
(1) putting a crystal raw material to be grown in a high-temperature-resistant crucible for heating and melting, and adjusting a temperature field in the furnace to enable the upper part of the melt to be in a supercooled state;
(2) putting seed crystals into the crucible through the seed crystal rod, and enabling the seed crystals to be in contact with the surface of the melt;
(3) after the surface of the seed crystal is slightly melted, the seed crystal rod is continuously pulled and rotated, so that the melt is in a supercooled state and is crystallized on the surface of the seed crystal, and finally, the cylindrical bulk single crystal is generated on the surface of the seed crystal.
10. The method for preparing cobalt-doped Q-spinel crystal with high repetition frequency modulation capability at 1.5 μm wave band according to claim 7, wherein the cobalt-doped Q-spinel crystal has a chemical formula of Co2x%:Mg(1-x%)Al6O12-3X，X =0 to 0.5, repetition frequency of 544kHz, and pulse width of 8.5 ns.
11. Claim 1, 7 and 10, wherein the chemical formula Co is2x%:Mg(1-x%)Al6O12-3X，And x = 0-0.5, and the repetition frequency of more than 500khz is realized.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008090909A1 (en) * | 2007-01-23 | 2008-07-31 | World Lab. Co., Ltd. | Transparent spinal ceramics, method for production thereof, and optical material using the transparent spinal ceramics |
| CN102030476A (en) * | 2010-11-03 | 2011-04-27 | 中国科学院上海光学精密机械研究所 | Cobalt magnesium aluminum-doped silicon-based nano microcrystalline glass containing lanthanumoxide and preparation method thereof |
| CN102191549A (en) * | 2011-04-20 | 2011-09-21 | 中国科学院上海硅酸盐研究所 | Passively Q-switched crytal material and preparation method thereof |
| CN213460460U (en) * | 2020-11-19 | 2021-06-15 | 南京信息工程大学 | A Co-based polymer composition comprising: MgAl2O4Passive mode-locked laser of saturable absorber |
-
2021
- 2021-10-21 CN CN202111225407.0A patent/CN114000194A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008090909A1 (en) * | 2007-01-23 | 2008-07-31 | World Lab. Co., Ltd. | Transparent spinal ceramics, method for production thereof, and optical material using the transparent spinal ceramics |
| CN102030476A (en) * | 2010-11-03 | 2011-04-27 | 中国科学院上海光学精密机械研究所 | Cobalt magnesium aluminum-doped silicon-based nano microcrystalline glass containing lanthanumoxide and preparation method thereof |
| CN102191549A (en) * | 2011-04-20 | 2011-09-21 | 中国科学院上海硅酸盐研究所 | Passively Q-switched crytal material and preparation method thereof |
| CN213460460U (en) * | 2020-11-19 | 2021-06-15 | 南京信息工程大学 | A Co-based polymer composition comprising: MgAl2O4Passive mode-locked laser of saturable absorber |
Non-Patent Citations (3)
| Title |
|---|
| SU, SHA ; LIU, QIANG ; HU, ZEWANG ; CHEN, XIAOPU ; PAN, HONGMING ; LIU, XIN ; WU, LEXIANG ; LI, JIANG: "A simple way to prepare Co:MgAl.sub.2O.sub.4 transparent ceramics for saturable absorber", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 797, pages 1288 - 142 * |
| 范仕刚;余明清;赵春霞;刘杰;陈广乐;何粲;张联盟;: "被动调Q用微晶玻璃的光学性能", 稀有金属材料与工程, no. 2, pages 1109 - 1111 * |
| 虞灿;夏海平;王冬杰;陈红兵;: "掺Co钨酸镉单晶体的坩埚下降生长及光谱特性", 光谱学与光谱分析, no. 09, pages 2350 - 2354 * |
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