CN114000125A - Preparation device of patterned two-dimensional material - Google Patents
Preparation device of patterned two-dimensional material Download PDFInfo
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- CN114000125A CN114000125A CN202111082819.3A CN202111082819A CN114000125A CN 114000125 A CN114000125 A CN 114000125A CN 202111082819 A CN202111082819 A CN 202111082819A CN 114000125 A CN114000125 A CN 114000125A
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- 239000000463 material Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000002243 precursor Substances 0.000 claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000007787 solid Substances 0.000 claims description 28
- 238000001816 cooling Methods 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 35
- 239000007789 gas Substances 0.000 description 47
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Abstract
The invention relates to the technical field of two-dimensional material preparation, in particular to a preparation device of a patterned two-dimensional material, which comprises a cavity, a three-dimensional driving part, a sample fixing part, a first heating part, a vacuumizing part and a plurality of gas conveying parts, wherein the cavity is provided with a plurality of grooves; the three-dimensional driving part is installed the cavity bottom, the sample fixed part is installed on the three-dimensional driving part, first heater block is installed in the cavity, first heater block is used for right the sample fixed part heats, evacuation part with the cavity intercommunication, gas conveying part installs on the cavity, gas conveying part's gas outlet is located the top of sample fixed part. The invention realizes the accurate movement of the substrate in the three-dimensional direction, so that the substrate and the precursor can generate relative movement, and further the patterned two-dimensional material can be obtained according to the required pattern.
Description
Technical Field
The invention relates to the technical field of two-dimensional material preparation, in particular to a preparation device of a patterned two-dimensional material.
Background
Ever-increasing performance of large scale integrated circuits has relied on the design of new device structures and the ever-decreasing size of transistors. As moore's law approaches the limit, conventional silicon-based transistors have reached their ultimate physical size, and the increase in tunneling current affects the overall performance and power consumption of the circuit. The two-dimensional semiconductor material has the characteristics that the thickness of an atomic layer, the surface without dangling bonds, the high carrier mobility and the like are obviously different from those of a silicon material, and is expected to become a channel material of a transistor device in the post-molar times.
The patterned formation of p-n junction and channel materials based on silicon materials is not suitable for two-dimensional materials due to the structure of the two-dimensional materials as opposed to silicon materials. Research shows that a Chemical Vapor Deposition (CVD) method can meet the requirements of preparation and patterning formation of a two-dimensional material p-n junction, and simultaneously considers the high quality of a sample, the controllability of a reaction process and the compatibility with the existing integrated circuit preparation process.
However, most of the existing CVD growth equipment is limited and improved on the traditional tube furnace equipment, the supply of all precursors is controlled by uniform global heating, and the synthesis of one component is difficult to control individually in the synthesis process of the heterojunction, so that the synthesis of a plurality of different component materials can affect each other, and the synthesis requirement of the p-n heterojunction cannot be met. And the existing CVD growth equipment has the defects that the precursor or the substrate is difficult to accurately move in a three-dimensional direction, and the relative movement between the precursor and the substrate is difficult to generate, so that a patterned two-dimensional material is difficult to form.
Disclosure of Invention
The invention provides a preparation device of a patterned two-dimensional material, which is used for solving the defect that a precursor or a substrate is difficult to accurately move in a three-dimensional direction in CVD growth equipment in the prior art, realizing the accurate movement of the substrate in the three-dimensional direction and obtaining the patterned two-dimensional material according to a required pattern.
The invention provides a preparation device of a patterned two-dimensional material, which comprises a cavity, a three-dimensional driving part, a sample fixing part, a first heating part, a vacuumizing part and a plurality of gas conveying parts, wherein the cavity is provided with a plurality of grooves;
the three-dimensional driving part is installed the cavity bottom, the sample fixed part is installed on the three-dimensional driving part, first heater block is installed in the cavity, first heater block is used for right the sample fixed part heats, evacuation part with the cavity intercommunication, gas conveying part installs on the cavity, gas conveying part's gas outlet is located the top of sample fixed part.
According to the preparation device of the patterned two-dimensional material, the preparation device of the patterned two-dimensional material further comprises a plurality of solid precursor supply parts, the solid precursor supply parts are mounted on the gas conveying parts, the solid precursor supply parts are communicated with the gas conveying parts, and second heating parts are arranged on the solid precursor supply parts.
According to the preparation device of the patterned two-dimensional material provided by the invention, the preparation device of the patterned two-dimensional material further comprises a cooling component, the cooling component is fixedly arranged in the cavity, and the cooling component is used for cooling the cavity.
According to the preparation device of the patterned two-dimensional material, provided by the invention, the cavity is provided with the observation window.
According to the preparation device of the patterned two-dimensional material, the first heating part comprises a graphite heater, and the graphite heater is fixedly arranged in the cavity.
According to the preparation device of the patterned two-dimensional material, the vacuumizing part comprises a vacuum machine and a vacuum degree detector, the vacuum machine is communicated with the cavity, and the vacuum degree detector is connected with the vacuum machine.
According to the preparation device of the patterned two-dimensional material, the gas conveying part comprises at least one pipeline, the pipeline is detachably connected with the cavity, one end of the pipeline is positioned above the sample fixing part, a mass flow meter and an electromagnetic stop valve are arranged on the pipeline, and the mass flow meter is connected with the electromagnetic stop valve.
According to the preparation device of the patterned two-dimensional material, the solid precursor supply part comprises a supply block detachably connected with the gas conveying part, a groove is formed in the supply block, and a through hole is formed in the connection position of the gas conveying part and the supply block.
According to the preparation device of the patterned two-dimensional material, the cooling part comprises a circulating pipeline which is fixedly arranged inside the cavity.
According to the preparation device of the patterned two-dimensional material, the cavity is vacuumized through the vacuumizing component, the vacuumizing component stops working when the vacuum degree in the cavity reaches a preset value, then inert gas is conveyed into the cavity through one or more gas conveying components, and the inert gas is stopped being conveyed into the cavity when the air pressure in the cavity is recovered to the normal pressure. And then heating the substrate on the sample fixing part by the first heating part for a certain time so that the temperature of the substrate reaches a preset growth temperature. The mixed gas containing the gaseous precursor is then delivered to the sample holding member through the gas delivery member such that the gaseous precursor is delivered directly to the substrate on the sample holding member. The three-dimensional driving part drives the sample fixing part to move up and down, so that the linear distance between the substrate on the sample fixing part and the gas outlet of the gas conveying part is the optimal reaction distance, and the gaseous precursor and the substrate react to grow the two-dimensional material at the gas outlet of the gas conveying part by a chemical vapor deposition method. And then, according to the required pattern, the three-dimensional driving part drives the sample fixing part to continuously move in front, back, left and right planes, so that the substrate can accurately move in the three-dimensional direction, the substrate and the precursor can relatively move, and the patterned two-dimensional material can be obtained according to the required pattern.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an apparatus for preparing a patterned two-dimensional material according to the present invention;
reference numerals:
1: a cavity; 2: a three-dimensional drive component; 3: a sample holding member;
4: a first heating member; 5: a vacuum-pumping component; 6: a gas delivery component;
7: solid precursor supply 8: a second heating member; 9: a cooling member;
a member; 41: a graphite heater; 51: a vacuum machine;
11: an observation window; 61: a pipeline; 62: a mass flow meter;
52: a vacuum degree detector; 71: a supply block; 72: a groove;
63: an electromagnetic cut-off valve;
91: a circulation line.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The apparatus for preparing a patterned two-dimensional material according to the present invention is described below with reference to fig. 1.
As shown in fig. 1, the apparatus for preparing a patterned two-dimensional material includes a chamber 1, a three-dimensional driving unit 2, a sample fixing unit 3, a first heating unit 4, a vacuum unit 5, and a plurality of gas delivery units 6.
Specifically, the three-dimensional driving part 2 is installed at the bottom of the cavity 1, the sample fixing part 3 is installed on the three-dimensional driving part 2, the first heating part 4 is installed in the cavity 1, the first heating part 4 is used for heating the sample fixing part 3, the vacuumizing part 5 is communicated with the cavity 1, the gas conveying part 6 is installed on the cavity 1, and a gas outlet of the gas conveying part 6 is located above the sample fixing part 3.
In use, a desired growth substrate comprising SiO is first placed on the sample holding member 3 and held2(300nm)/Si, sapphire, mica, Cu foil, etc. Then the chamber 1 is closed, the chamber 1 is vacuumized by the vacuumizing part 5, and when the vacuum degree in the chamber 1 reaches a preset value (for example, less than 10)-5Pa), the evacuation component 5 stops working, then the inert gas is conveyed into the chamber 1 through one or more gas conveying components 6, and when the pressure in the chamber 1 returns to the normal pressure, the inert gas is stopped being conveyed into the chamber 1. The substrate on the sample holding member 3 is then heated by the first heating member 4 for a certain time so that the temperature of the substrate reaches a preset growth temperature. The mixed gas containing the gaseous precursor is then delivered to the sample holding part 3 through the gas delivery part 6 so that the gaseous precursor is delivered directly onto the substrate on the sample holding part 3. The three-dimensional driving part 2 drives the sample fixing part 3 to move up and down, so that the linear distance between the substrate on the sample fixing part 3 and the gas outlet of the gas conveying part 6 is the optimal reaction distance, and the gaseous precursor and the substrate react to grow the two-dimensional material at the gas outlet of the gas conveying part 6 through a chemical vapor deposition method. Then, according to the required pattern, the three-dimensional driving part 2 drives the sample fixing part 3 to continuously move in front, back, left and right planes, so that the substrate can accurately move in the three-dimensional direction, the substrate and the precursor can relatively move, and the patterned two-dimensional material can be obtained according to the required pattern.
Wherein, in an alternative embodiment of the present invention, the chamber 1 is, for example, a stainless steel chamber 1. It should be understood that the chamber 1 may be any other suitable material.
Wherein in an alternative embodiment of the invention, the three-dimensional drive component 2 is, for example, a three-dimensional translation stage.
Further, as shown in fig. 1, the chamber 1 is provided with an observation window 11. When the device is used, the growth condition of the two-dimensional material can be monitored in real time through the observation window 11 by combining equipment such as a long-focus optical microscope and the like, and the in-situ growth mechanism interpretation of the two-dimensional material is realized.
Further, the sample fixing member 3 is made of graphite or silicon nitride ceramic, which ensures that the sample fixing member 3 is more durable while having good thermal conductivity.
Further, as shown in fig. 1, the first heating member 4 includes a graphite heater 41, and the graphite heater 41 is fixedly installed in the chamber 1. When the device is used, the graphite heater 41 heats the bottom of the sample fixing part 3, so that the temperature of the substrate placed on the sample fixing part 3 rises, the temperature of the substrate can reach a preset reaction temperature, and the precursor can react on the substrate to obtain the two-dimensional material.
Further, as shown in fig. 1, the vacuum unit 5 includes a vacuum machine 51 and a vacuum degree detector 52, the vacuum machine 51 is connected to the chamber 1, and the vacuum degree detector 52 is connected to the vacuum machine 51. When the vacuum degree detector 52 detects that the vacuum degree in the cavity 1 reaches a preset value, the vacuum machine 51 stops working, so that the vacuum degree in the cavity 1 meets the requirement, and the preparation of the patterned two-dimensional material can be smoothly carried out.
Further, as shown in fig. 1, the gas conveying part 6 includes at least one pipe 61, the pipe 61 is detachably connected to the chamber 1, one end of the pipe 61 is located above the sample fixing part 3, the pipe 61 is provided with a mass flow meter 62 and an electromagnetic stop valve 63, and the mass flow meter 62 is connected to the electromagnetic stop valve 63. When using, can carry out the dismouting to pipeline 61 according to actual demand, carry the mist that contains the precursor toward the substrate on the sample fixed part 3 through pipeline 61, mass flow meter 62 then real-time detection passes through the gaseous volume of pipeline 61 transport on the substrate, when mass flow meter 62 detected the gaseous volume of carrying and reached predetermined volume, electromagnetism stop valve 63 cuts pipeline 61, and then stops to carry gas toward the substrate, has satisfied the accurate synthetic requirement of p-n heterojunction and patterned two-dimensional material.
Wherein, in an alternative embodiment of the present invention, the tube 61 is, for example, a quartz tube. It should be understood that the tube 61 may be any other suitable material.
Further, as shown in fig. 1, the apparatus for preparing a patterned two-dimensional material further comprises a plurality of solid precursor supply members 7, the solid precursor supply members 7 are mounted on the gas delivery member 6, the solid precursor supply members 7 are communicated with the gas delivery member 6, and the second heating member 8 is disposed on the solid precursor supply members 7.
In use, a solid precursor required for a chemical vapor deposition reaction is placed in a portion of the solid precursor supply part 7, and then a desired growth substrate is placed on the sample holding part 3 and held. Then the cavity 1 is sealed, the cavity 1 is vacuumized through the vacuumizing part 5, and when the vacuum degree in the cavity 1 reaches a preset value, inert gas is conveyed into the cavity 1 through one or more gas conveying parts 6 until the air pressure in the cavity 1 is recovered to the normal pressure. The substrate on the sample holding member 3 is then heated by the first heating member 4 for a certain time so that the temperature of the substrate reaches a preset growth temperature. And then the precursor part is heated by the second heating part 8, so that the solid precursor in the precursor part is volatilized into gas, meanwhile, the inert gas is conveyed to the sample fixing part 3 by the gas conveying part 6 communicated with the precursor part, and when the gas is conveyed to the sample fixing part 3 by the gas conveying part 6, the volatilized precursor is driven to move to the substrate on the sample fixing part 3 together. Then the sample fixing part 3 and the substrate on the sample fixing part 3 are moved in three-dimensional direction according to actual requirements by the three-dimensional driving part 2, and then the first patterned two-dimensional material with the required pattern is obtained.
Wherein, in an alternative embodiment of the present invention, the second heating member 8 is, for example, a resistance wire. It should be understood that the second heating member 8 may be any other suitable heating member.
The other part of the solid precursor supply part 7 is filled with another solid precursor, the solid precursor in the solid precursor supply part 7 is heated in the same way, so that the solid precursor is volatilized, then the inert gas is conveyed to the sample fixing part 3 through the gas conveying part 6 communicated with the precursor part, and simultaneously conveys the volatilized precursor to the sample fixing part 3, and simultaneously drives the sample fixing part 3 through the three-dimensional driving part 2, so that the gas outlet of the gas-conveying member 6 that conveys the gas at this time is located at the edge of the domain of the first patterned two-dimensional material, thereby causing another precursor to react at the edges of the first patterned two-dimensional material to form a second patterned two-dimensional material, and growing the second two-dimensional material outwards along the edge of the first two-dimensional material to form an in-plane heterojunction or growing the second two-dimensional material inwards along the edge of the first two-dimensional material to form an out-of-plane heterojunction. The synthesis of one component is independently controlled in the forming process of the heterojunction, and then the synthesis of the other component is controlled, so that the mutual influence of the synthesis of materials with different components is avoided, and the quality of the heterojunction is ensured.
As shown in fig. 1, the solid precursor supply unit 7 includes a supply block 71 detachably connected to the gas delivery unit 6, a groove 72 is formed on the supply block 71, and a through hole is formed at the connection position of the gas delivery unit 6 and the supply block 71. When the device is used, the solid precursor is placed in the groove 72, the supply block 71 is installed on the gas conveying component 6, the supply block 71 is heated, the solid precursor inside the supply block 71 is volatilized, the groove 72 is communicated with the gas conveying component 6 through the through hole, the volatilized precursor is driven by gas conveyed from the gas conveying component 6 to the sample fixing component, the volatilized precursor is conveyed to the substrate to react with the substrate, and when the solid precursor needs to be added or replaced, the supply block 71 can be detached from the gas conveying component 6, so that the device is simple and convenient.
Further, as shown in fig. 1, the apparatus for preparing a patterned two-dimensional material further includes a cooling member 9, the cooling member 9 is fixedly installed in the chamber 1, and the cooling member 9 is used for cooling the chamber 1. When the device is used, the substrate or the solid precursor needs to be heated in the preparation process of the patterned two-dimensional material, so that the temperature in the cavity 1 is inevitably increased, and the cooling part 9 can be used for reducing the temperature in the cavity 1, so that the three-dimensional driving part 2 and other parts in the cavity 1 can be kept at a proper working temperature, and the preparation device of the patterned two-dimensional material can be ensured to stably operate for a long time.
As shown in fig. 1, the cooling member 9 includes a circulation pipeline 91, and the circulation pipeline 91 is fixedly installed inside the cavity 1. When the device is used, a refrigerating system is connected with the circulating pipeline 91, water is filled in the circulating pipeline 91, the water is cooled through the refrigerating system and is driven to flow in a continuous circulating mode, heat in the cavity 1 is taken away when low-temperature water passing through the refrigerating system flows in the cavity 1 in a circulating mode, cooling of all parts in the cavity 1 is achieved, and the preparation device for the patterned two-dimensional material can run stably for a long time.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. The preparation device of the patterned two-dimensional material is characterized by comprising a cavity, a three-dimensional driving part, a sample fixing part, a first heating part, a vacuumizing part and a plurality of gas conveying parts;
the three-dimensional driving part is installed the cavity bottom, the sample fixed part is installed on the three-dimensional driving part, first heater block is installed in the cavity, first heater block is used for right the sample fixed part heats, evacuation part with the cavity intercommunication, gas conveying part installs on the cavity, gas conveying part's gas outlet is located the top of sample fixed part.
2. The apparatus of claim 1, further comprising a plurality of solid precursor supplies, wherein the solid precursor supplies are mounted on the gas delivery assembly, and wherein the solid precursor supplies are in communication with the gas delivery assembly, and wherein the solid precursor supplies are provided with second heating members.
3. The apparatus according to claim 1 or 2, further comprising a cooling member, wherein the cooling member is fixedly installed in the cavity, and the cooling member is configured to cool the cavity.
4. The apparatus of claim 1 or 2, wherein the chamber is provided with a viewing window.
5. The apparatus of claim 1 or 2, wherein the first heating member comprises a graphite heater fixedly mounted within the chamber.
6. The apparatus according to claim 1 or 2, wherein the vacuum unit includes a vacuum machine and a vacuum degree detector, the vacuum machine is connected to the chamber, and the vacuum degree detector is connected to the vacuum machine.
7. The apparatus according to claim 1 or 2, wherein the gas delivery member comprises at least one pipe, the pipe is detachably connected to the chamber, one end of the pipe is located above the sample fixing member, and a mass flow meter and an electromagnetic shutoff valve are arranged on the pipe, and the mass flow meter is connected to the electromagnetic shutoff valve.
8. The apparatus of claim 2, wherein the solid precursor supply unit comprises a supply block detachably connected to the gas delivery unit, the supply block is provided with a groove, and a through hole is formed at the connection position of the gas delivery unit and the supply block.
9. The apparatus according to claim 3, wherein the cooling member comprises a circulation line, and the circulation line is fixedly installed inside the chamber.
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| CN202111082819.3A CN114000125A (en) | 2021-09-15 | 2021-09-15 | Preparation device of patterned two-dimensional material |
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| CN103261088A (en) * | 2010-10-07 | 2013-08-21 | 浦项工科大学校产学协力团 | Micro-pattern forming method, and micro-channel transistor and micro-channel light-emitting transistor forming method using same |
| CN104532211A (en) * | 2014-10-18 | 2015-04-22 | 华中科技大学 | Method and device for growth ofnitride materials at low temperature through laser assistance |
| CN108130524A (en) * | 2017-12-22 | 2018-06-08 | 中国科学院电工研究所 | The method of plasma jet thin film deposition device and aufhellung surface trap energy level |
| CN111441038A (en) * | 2020-03-20 | 2020-07-24 | 华南理工大学 | Nano-material printer based on chemical vapor deposition method |
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