CN114000069A

CN114000069A - Preparation method of continuous SiC fiber reinforced metal matrix composite lattice structure

Info

Publication number: CN114000069A
Application number: CN202111176187.7A
Authority: CN
Inventors: 李虎; 黄浩; 王敏涓; 王宝; 黄旭
Original assignee: AECC Beijing Institute of Aeronautical Materials
Current assignee: AECC Beijing Institute of Aeronautical Materials
Priority date: 2021-10-09
Filing date: 2021-10-09
Publication date: 2022-02-01
Anticipated expiration: 2041-10-09
Also published as: CN114000069B

Abstract

The invention relates to a method for preparing a lattice structure of a continuous SiC fiber reinforced metal matrix composite material. Polymethyl methacrylate (PMMA) can be used to soften, melt-solidify and melt-solidify at medium and low temperatures (~270° C.) ～400℃) can be completely cracked into gas, soak SiCf-metal precursor ribbons in PMMA melt, and obtain uniformly arranged precursor ribbons after solidification. The precursor ribbons are alternately arranged and then heated and pressurized, so that the precursor ribbons are in contact with each other And the relative position is fixed under the action of pressure, further heating makes PMMA cracking and gasifying, and the multi-void structure is conducive to the volatilization of the cracking gas, and then the temperature is raised to a certain temperature, and the pressure is applied to make the precursor filaments diffuse and connect to each other to form a whole, and a lattice is obtained. structure. The lattice structure prepared by the method has uniform and controllable spacing of the precursor wires, and the relative angle of the interlayer precursor wires can be adjusted in real time according to the position, which can meet more design structure requirements.

Description

Preparation method of continuous SiC fiber reinforced metal matrix composite lattice structure

Technical Field

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method of a continuous SiC fiber reinforced metal matrix composite lattice structure.

Background

The lattice material is a novel porous material with regular hole shapes and periodic hole arrangement, and is different from the traditional material in that the lattice material has a changeable ordered microstructure and high porosity, has excellent performances of light weight, high strength, high-efficiency heat dissipation, electromagnetic wave and sound absorption, explosion impact resistance and the like, and has better mechanical properties than metal foam with an unordered microstructure under the same weight, so that the lattice material has great application potential in various fields, such as aerospace, transportation, weaponry, building and the like. The lattice material is usually made of metal material, ceramic material, carbon fiber reinforced resin matrix composite material and the like. The metal material has better formability but can not be used at higher temperature, the carbon fiber reinforced resin matrix composite material is also limited by service temperature and has poorer compression resistance, and the ceramic material can be used at high temperature but has poorer formability, particularly the connection between lattice points.

Therefore, the requirements of use at higher temperature and better formability are met, the characteristics of good metal formability and high-temperature resistance of ceramic are required to be utilized, the ceramic/metal composite material has good design space, wherein the continuous monofilament SiC fiber ceramic fiber has excellent room-high-temperature tensile, compression and shear strength, is suitable for being used as a reinforcement of a metal-based composite material, has larger diameter, good operability and convenient forming, and the titanium alloy has excellent medium-high temperature performance and better formability and has good chemical compatibility with the SiC fiber, so that the continuous SiC fiber reinforced titanium-based composite material lattice structure has better application potential. At present, the process for preparing the continuous SiC fiber reinforced titanium matrix composite lattice structure mainly comprises the steps of designing a precursor wire arrangement auxiliary die, laying precursor wires and then carrying out vacuum hot-press molding. The method is characterized in that the required mould is complex, and each layer of precursor wires and the adjacent precursor wires on the upper layer and the lower layer have only one fixed relative angle.

Disclosure of Invention

In order to overcome the defects of complex laying auxiliary die of precursor wires, relatively single arrangement angle of the precursor wires and the like required by preparing a continuous SiC fiber reinforced metal matrix composite lattice structure, the invention aims to provide a preparation process of the SiC fiber reinforced metal matrix composite lattice structure, which can simplify the auxiliary die required by the preparation process, and can adjust and change the arrangement angle of the precursor wires.

In order to achieve the purpose, the invention adopts the following technical scheme:

a preparation method of a continuous SiC fiber reinforced metal matrix composite lattice structure is characterized by comprising the following steps:

step one, cutting continuous SiC_fA metallic precursor wire, resulting in a precursor wire ribbon consisting of a set of precursor wires arranged in parallel and uniformly spaced, in particular by depositing continuous SiC_fThe metal precursor wires are wound outside the cylinder, the relative spacing of the precursor wires is fixed, and then the precursor wire belts are cut along the generatrix of the cylinder, so that the uniformity and the efficiency can be improved. The center distance between adjacent precursor wires can be controlled between 0.2mm and 3mm by controlling the winding pitch according to the design requirements, and can be adjusted according to the specific design requirements. Wherein the continuous SiC_fThe metal precursor wire is SiC fiber with a coating of metal or alloy thereof with the thickness of 20-100 mu m on the surface. The metal may be selected from titanium, copper, iron, nickel, aluminum, magnesium, tungsten, or the like.

Step two, soaking the precursor filament band prepared in the step one in polymethyl methacrylate molten liquid to obtain a single-layer precursor filament plate after solidification; specifically, the precursor silk ribbon in the first step can be placed in a groove with a predetermined depth and fixed; heating polymethyl methacrylate (PMMA) to molten state, pouringAnd (4) putting the precursor wire strip into the groove until the precursor wire strip is completely immersed, solidifying the polymethyl methacrylate after cooling to fix the relative position of the precursor wire, and thus obtaining the single-layer precursor wire plate. When the continuous SiC is_fWhen the metal precursor wire is a SiC fiber with the diameter of 100 microns and the surface of which is provided with a coating of metal or alloy thereof with the thickness of 20 microns to 100 microns, the preset depth of the groove can be 0.15 mm to 0.5 mm.

Step three, repeating the step two or synchronously preparing a precursor wire plate by adopting a plurality of grooves to prepare a plurality of precursor wire plates;

step four, stacking the precursor wire plates prepared in the step three, wherein precursor wires in two adjacent layers of precursor wire plates are arranged at a certain angle; the angle is generally 20-90 degrees, depending on the design requirements.

Step five, placing the precursor wire plates stacked together in the step four in a vacuum hot-pressing furnace, applying pressure of 0.01-0.5 MPa, and vacuumizing to 10 DEG^-2Pa, heating to 180-200 ℃, heating for 2-3 h, softening and melting PMMA in the heating process, keeping the temperature and the pressure for 1-3 h, and enabling the SiC between layers to be under the action of pressure_f-the metallic precursor wires reach a state of mutual contact; heating to 270-400 ℃, keeping the temperature and the pressure for 4-6 h, and completely cracking PMMA into gas at the temperature; and then heating to a temperature 0.4-0.8 times of the melting point of the metal (when the metal is titanium, 700-1000 ℃ (determined by titanium alloy brand)), pressurizing to 0.5-40 MPa, preserving heat and pressure for 2-10 h to ensure that the precursor wires which are contacted are mutually diffused and connected into a whole, cooling the furnace to be lower than 200 ℃, and then unloading and taking out to obtain the continuous SiC fiber reinforced metal matrix composite lattice structure.

The invention has the advantages that: (1) in the preparation process, a complex precursor wire laying mold is not needed, the uniform and controllable spacing of precursor wires can be realized, and the PMMA has good light transmittance and can visually check and screen the distribution uniformity and defects of the prepared precursor wire plate; (2) the metal matrix composite material lattice structure has a large number of pores, so that the gas is volatilized after PMMA is cracked; (3) the invention breaks through the limitation of the prior mould method on the fixation and single angle of the interlaminar precursor wires, the arrangement angle of the interlaminar precursor wires is more flexible, and the design requirements can be more flexibly met; (4) the metal matrix composite lattice structure obtained by the method has the advantages that the most surface layer is metal or alloy thereof, the metal matrix composite lattice structure is convenient to be connected with other members/structures through welding, and the connecting position has the advantages of high temperature resistance and high strength.

Drawings

FIG. 1 is a schematic diagram of the process of making and stacking precursor filament plates of the present invention;

FIG. 2 is a schematic diagram of a lattice structure prepared by the method of the present invention.

Detailed Description

For a clearer understanding of the objects, technical solutions and advantages of the present invention, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

The invention provides a preparation method of a continuous SiC fiber reinforced metal matrix composite lattice structure, wherein FIG. 1 is a schematic diagram of a preparation and stacking process of a precursor wire plate of the invention, and FIG. 2 is a schematic diagram of the lattice structure prepared by the method of the invention.

Attaching double-sided adhesive tape to the bus direction of the outer cylindrical surface outside the cylindrical tool, and bonding SiC_fOne end of a TC17 precursor wire (SiC fiber with the diameter of 100 mu m and provided with a TC17 titanium alloy coating with the thickness of 25 mu m on the surface) is fixed on the surface of the cylinder tool perpendicular to the double-sided adhesive tape, the SiC fiber is rotated clockwise along the central shaft of the cylinder tool, the diameter and the height of the cylinder can be adjusted, and the circumference of the cylinder, namely the SiC fiber is the circumference of the cylinder_fLength of precursor ribbon of TC17, precursor filament winding pitch set at 0.5mm, SiC wound after winding to specified width_fThe TC17 precursor wire is fixed by double-sided adhesive, as shown in fig. 1 (a). All the wound SiC_fThe precursor wire of-TC 17 is cut along the direction of the double-sided adhesive tape (i.e. the generatrix direction of the outer cylindrical surface) to obtain SiC_fTC17 precursor band, in this way SiC_fThe precursor filaments of the precursor filament band of-TC 17 are uniformly arranged and have high efficiency.

Placing the precursor silk ribbon in a groove with the depth of 0.3mm and fixing, as shown in figure 1 (b); heating PMMA to 200 ℃ to be in a molten state, pouring the molten liquid into the groove until the precursor silk ribbon is completely immersed, cooling, solidifying PMMA and carrying out SiC_fFixing the relative position of the-TC 17 precursor wires to prepare single-layer SiC_f-TC17 firstA wire driving plate;

repeating the previous step or preparing a plurality of SiC by adopting a plurality of grooves_f-TC17 precursor filament plate.

Mixing SiC_fThe TC17 precursor wire plates are stacked in a vacuum hot-pressing furnace, and the laying angle is alternatively distributed from 0 degrees/45 degrees/90 degrees, and the schematic diagram is shown in figure 1 (c). Applying a load of 0.1MPa for pre-pressurizing, and vacuumizing to 10 DEG^-2Pa, heating to 200 ℃, keeping the temperature and the pressure for 2h, softening and melting PMMA in the heating process, and enabling SiC between layers to be under the action of pressure_fTC17 the precursor filaments reach a state of contact, i.e. the relative position between the precursor filaments is fixed; heating to 400 ℃, preserving heat and pressure for 6h, completely cracking PMMA into gas at the temperature, and only remaining the precursor filaments with fixed positions; and then heating to 900 ℃, pressurizing to 10MPa, preserving heat and pressure for 5h to ensure that the precursor wires which are contacted with each other are mutually diffused and connected to form a whole, then cooling in a furnace to be lower than 200 ℃, then unloading and taking out to prepare the continuous SiC fiber reinforced TC17 composite material lattice structure, wherein the schematic diagram is shown in figure 2.

Although the TC17 titanium alloy is exemplified above, titanium or other titanium alloy may be used instead, or even other metals or alloys thereof, in which case the temperature required to form the diffusion bond between the contacting precursor wires is typically 0.4 to 0.8 times the melting point of the corresponding metal or alloy.

According to the invention, by utilizing the characteristics that polymethyl methacrylate (PMMA) can be softened, melted and solidified at medium and low temperature (-270 ℃) and can be completely cracked into gas at medium and low temperature (-400 ℃), SiCf-metal precursor ribbons are soaked in PMMA molten liquid, uniformly distributed precursor ribbons can be obtained after solidification, the precursor ribbons are alternately distributed and heated and pressurized, so that the precursor ribbons are mutually contacted and are fixed in relative position under the action of pressure, the PMMA is cracked and gasified by further heating, meanwhile, the porous structure is favorable for volatilization of cracked gas, then the temperature is raised to a certain temperature, and the precursor ribbons are mutually diffused and connected to form a whole body by pressurization, thereby obtaining the lattice structure. The lattice structure prepared by the method has the advantages that the spacing between the precursor wires is uniform and controllable, the relative angle of the precursor wires between layers can be adjusted in real time according to the position, and more design structure requirements can be met.

Claims

1. a preparation method of continuous SiC fiber reinforced metal matrix composite lattice structure, comprising the following steps:

Step 1, cutting the continuous SiC _f -metal precursor wire to obtain a precursor ribbon composed of a group of precursor wires arranged in parallel and evenly spaced;

Step 2, soak the precursor ribbon obtained in step 1 with polymethyl methacrylate melt and solidify to obtain a single-layer precursor wire plate;

Step 3, repeating Step 2 to prepare a plurality of pioneer silk plates;

Step 4, stacking the precursor wire plates prepared in step 3, and the precursor wires in the adjacent two layers of precursor wire plates are arranged at a certain angle;

Step 5. Place the stacked precursor wire plates in step 4 in a vacuum hot pressing furnace, apply a pressure of 0.01MPa to 0.5MPa, and heat up to 180°C to 200°C, the heating time is more than 2h, and the temperature is maintained for more than 1h. ; then heat up to 270 ℃ ~ 400 ℃, heat preservation and pressure for more than 4h; then heat up to a temperature of 0.4 to 0.8 times the melting point of the metal, pressurize to 0.5MPa ~ 40MPa, heat preservation and pressure for 2h ~ 10h; furnace cool to below 200 After ℃, the pressure is relieved and taken out, and the lattice structure of the continuous SiC fiber reinforced metal matrix composite material is obtained.

2 . The method according to claim 1 , wherein the continuous SiC _f -metal precursor wire is a SiC fiber with a coating of metal or alloy thereof with a thickness of 20 μm to 100 μm on the surface. 3 .

3. The method of claim 2, wherein the metal is selected from titanium, copper, iron, nickel, aluminum, magnesium or tungsten.

4. The method according to claim 1, wherein said cutting the continuous SiC _f -metal precursor wire to obtain a precursor ribbon composed of a group of parallel and uniformly arranged precursor wires comprises winding the continuous SiC _f -metal precursor wire on a circle. On the outside of the cylinder, the relative spacing of the precursor wires is fixed, and then the precursor ribbons are obtained by cutting along the generatrix of the cylinder.

5. according to the method described in claim 1, wherein the pioneer ribbon that obtains single-layer pioneer silk plate after soaking step 1 with polymethyl methacrylate melt solution is solidified comprises that the pioneer ribbon in step 1 is placed in the depth of Put it in the groove of a predetermined depth and fix it; after heating the polymethyl methacrylate to a molten state, pour it into the groove until the precursor ribbon is completely submerged, and after cooling, the polymethyl methacrylate solidifies to make the relative position of the precursor wire. fixed to obtain the single-layer precursor silk sheet.

6. The method according to claim 5, wherein the continuous SiC _f -metal precursor wire is a SiC fiber with a diameter of 100 μm having a coating of a metal or its alloy with a thickness of 20 μm to 100 μm on the surface, and the grooves are predetermined. The depth is 0.15 to 0.5 mm.

7. The method according to claim 1, wherein the center distance between adjacent precursor wires is 0.2mm˜3mm.

8. The method according to claim 1, wherein the angle between the precursor wires in the two adjacent layers of precursor wire sheets is 20°˜90°.

9 . The method according to claim 1 , wherein the heating time for heating to 180° C.～200° C. is 2h～3h, the heat preservation and pressure keeping time is 1h～3h, and the heat preservation and pressure keeping time at 270°C～400°C is 4h～6h. 10 .