CN113994263B - 包含二氰基苯乙烯基的能够湿蚀刻的抗蚀剂下层膜形成用组合物 - Google Patents

包含二氰基苯乙烯基的能够湿蚀刻的抗蚀剂下层膜形成用组合物 Download PDF

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Publication number
CN113994263B
CN113994263B CN202080044359.2A CN202080044359A CN113994263B CN 113994263 B CN113994263 B CN 113994263B CN 202080044359 A CN202080044359 A CN 202080044359A CN 113994263 B CN113994263 B CN 113994263B
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China
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group
underlayer film
resist
resist underlayer
compound
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CN202080044359.2A
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Chinese (zh)
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CN113994263A (zh
Inventor
远藤贵文
远藤勇树
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Nissan Chemical Corp
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Nissan Chemical Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN202080044359.2A 2019-06-17 2020-06-17 包含二氰基苯乙烯基的能够湿蚀刻的抗蚀剂下层膜形成用组合物 Active CN113994263B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-111916 2019-06-17
JP2019111916 2019-06-17
PCT/JP2020/023671 WO2020255985A1 (ja) 2019-06-17 2020-06-17 ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
CN113994263A CN113994263A (zh) 2022-01-28
CN113994263B true CN113994263B (zh) 2024-08-16

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Country Status (6)

Country Link
US (1) US11977331B2 (https=)
JP (1) JP7322949B2 (https=)
KR (1) KR102592573B1 (https=)
CN (1) CN113994263B (https=)
TW (1) TWI834886B (https=)
WO (1) WO2020255985A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI803390B (zh) * 2022-07-15 2023-05-21 三福化工股份有限公司 蝕刻液組成物及其蝕刻方法
KR20250121560A (ko) * 2022-12-15 2025-08-12 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물
TW202535995A (zh) * 2024-01-31 2025-09-16 日商日產化學股份有限公司 光阻下層膜形成用組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105940348A (zh) * 2014-02-12 2016-09-14 日产化学工业株式会社 包含含有氟的表面活性剂的膜形成用组合物
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物

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JPS6199331A (ja) * 1984-10-19 1986-05-17 Sumitomo Chem Co Ltd 微細パタ−ン形成法
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
US6846612B2 (en) * 2002-02-01 2005-01-25 Brewer Science Inc. Organic anti-reflective coating compositions for advanced microlithography
US6872506B2 (en) * 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
GB0219745D0 (en) 2002-08-23 2002-10-02 Fast Technology Ag Torque sensor adaptor
JP2005321752A (ja) 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
KR101599562B1 (ko) 2007-10-10 2016-03-03 바스프 에스이 술포늄 염 개시제
WO2011125839A1 (ja) 2010-03-31 2011-10-13 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP5791874B2 (ja) * 2010-03-31 2015-10-07 富士フイルム株式会社 着色組成物、インクジェット用インク、カラーフィルタ及びその製造方法、固体撮像素子、並びに表示装置
JP5623934B2 (ja) * 2011-02-08 2014-11-12 富士フイルム株式会社 着色組成物、着色感放射線性組成物、色素多量体の製造方法、インクジェット用インク、カラーフィルタ及びその製造方法、固体撮像素子、並びに表示装置
TWI843863B (zh) * 2019-06-17 2024-06-01 日商日產化學股份有限公司 含有具二氰基苯乙烯基之雜環化合物之可濕蝕刻之阻劑下層膜形成組成物、經圖案化的基板之製造方法、半導體裝置之製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105940348A (zh) * 2014-02-12 2016-09-14 日产化学工业株式会社 包含含有氟的表面活性剂的膜形成用组合物
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物

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Publication number Publication date
US20220397828A1 (en) 2022-12-15
WO2020255985A1 (ja) 2020-12-24
JP7322949B2 (ja) 2023-08-08
KR20220024080A (ko) 2022-03-03
TWI834886B (zh) 2024-03-11
US11977331B2 (en) 2024-05-07
JPWO2020255985A1 (https=) 2020-12-24
CN113994263A (zh) 2022-01-28
TW202113486A (zh) 2021-04-01
KR102592573B1 (ko) 2023-10-23

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