CN113993047A - Piezoelectric MEMS microphone - Google Patents
Piezoelectric MEMS microphone Download PDFInfo
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- CN113993047A CN113993047A CN202110962909.5A CN202110962909A CN113993047A CN 113993047 A CN113993047 A CN 113993047A CN 202110962909 A CN202110962909 A CN 202110962909A CN 113993047 A CN113993047 A CN 113993047A
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Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/02—Microphones
- H04R17/025—Microphones using a piezoelectric polymer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
The invention discloses a piezoelectric MEMS microphone, which comprises a substrate and one or more sound films positioned on the substrate, wherein the sound films comprise: one or more piezoelectric layers, one or more electrode layers, and one or more dielectric layers stacked in the longitudinal direction, wherein the dielectric layers are located between the piezoelectric layers and the electrode layers. According to the invention, the dielectric layer is inserted between the piezoelectric layer and the electrode layer, so that the leakage current flowing through the piezoelectric layer and the dielectric loss in the piezoelectric layer are reduced, the equivalent loss angle tan delta of the piezoelectric layer is reduced, the signal-to-noise ratio SNR of the piezoelectric MEMS microphone is finally improved, and the performance of the piezoelectric MEMS microphone is improved.
Description
Technical Field
The invention relates to the technical field of microphones, in particular to a piezoelectric MEMS microphone with a functional layer.
Background
MEMS microphones are microphones produced on the basis of MEMS (Micro-Electro-Mechanical Systems) technology, i.e. miniature microphones produced on a silicon Micro-substrate by means of MEMS processing, and are therefore also referred to as silicon microphones. Piezoelectric MEMS microphones typically comprise one or more acoustic membranes, each comprising a piezoelectric layer and an electrode layer.
Different from the traditional microphone, the MEMS microphone has the characteristics of small size, light weight, simplicity in installation, easiness in forming an array, low cost, batch manufacturing and the like, and is widely applied to mobile phones, notebook computers and the like in the field of consumer electronics, hand-free phones in the field of automobiles, hearing aids in the field of medicine and the like.
However, the prior art piezoelectric MEMS microphones generally have low signal-to-noise ratio and do not meet the requirements of high-end applications. Therefore, it is necessary to provide a piezoelectric MEMS microphone with better performance to solve the above technical problems.
Disclosure of Invention
In view of the above, the present invention provides a piezoelectric MEMS microphone structure with a dielectric layer and an electronic device, which can solve the problems of the prior art.
A first aspect of the present invention provides a piezoelectric MEMS microphone, comprising a substrate and one or more acoustic membranes located over the substrate, the acoustic membranes comprising: one or more piezoelectric layers, one or more electrode layers, and one or more dielectric layers stacked in a longitudinal direction, wherein the dielectric layers are located between the piezoelectric layers and the electrode layers.
Optionally, the position of the medium layer is close to the longitudinal neutral axis position of the sound film.
Optionally, the thickness of the dielectric layer is less than one tenth of the thickness of the piezoelectric layer.
Optionally, the thickness of the dielectric layer is 0.1 nm to 1 micron, or 1 nm to 100 nm.
Optionally, the resistivity of the material of the dielectric layer is higher than the resistivity of the material of the piezoelectric layer; or the dielectric loss coefficient of the material of the dielectric layer is lower than the dielectric loss coefficient of the material of the piezoelectric layer.
Optionally, the dielectric layer is made of silicon oxide, silicon nitride, air, gallium nitride or silicon carbide, or vacuum is used to replace the dielectric layer.
Optionally, the material of the piezoelectric layer is polycrystalline or single crystal aluminum nitride, rare earth element doped aluminum nitride, lead zirconate titanate, zinc oxide, lithium niobate, potassium niobate, or lithium tantalate.
Optionally, the piezoelectric MEMS microphone comprises a plurality of acoustic membranes and the plurality of acoustic membranes are separated from each other by a slit.
Optionally, the piezoelectric MEMS microphone comprises a sound membrane, said sound membrane being of unitary form.
Optionally, the sound system further comprises an isolation layer located between the sound diaphragm and the substrate.
Optionally, the acoustic membrane comprises a layer of the piezoelectric layer and the acoustic membrane further comprises a structural layer, the structural layer being located at the bottom or top of the acoustic membrane.
Optionally, the sound diaphragm includes a dielectric layer, and the dielectric layer is located between the piezoelectric layer and the structural layer at the bottom.
Optionally, the boundary position of the dielectric layer has a boundary support structure.
Optionally, the dielectric layer is in the form of a continuous film.
Optionally, an internal support structure is located at an internal position of the dielectric layer, and the dielectric layer is in the form of a discontinuous film.
Optionally, the sound membrane comprises 3 electrode layers and 2 laminated electrical layers, which are alternately laminated in the order: a bottom electrode layer, a lower piezoelectric layer, a middle electrode layer, an upper piezoelectric layer, and a top electrode layer.
Optionally, the acoustic membrane comprises a dielectric layer, the dielectric layer is located between the upper piezoelectric layer and the top electrode layer, or between the upper piezoelectric layer and the middle electrode layer, or between the lower piezoelectric layer and the bottom electrode layer.
Optionally, the sound film includes two dielectric layers, and the two dielectric layers are respectively disposed above and below the middle electrode layer.
Optionally, the two dielectric layers have equal thickness.
A second aspect of the invention proposes an electronic device comprising a piezoelectric MEMS microphone according to the invention.
According to the technical scheme of the invention, the dielectric layer is inserted between the piezoelectric layer and the electrode layer, so that the leakage current flowing through the piezoelectric layer and the dielectric loss in the piezoelectric layer are reduced, the equivalent loss angle tan delta of the piezoelectric layer is reduced, the signal-to-noise ratio SNR of the piezoelectric MEMS microphone is finally improved, and the microphone performance is improved.
Drawings
For purposes of illustration and not limitation, the present invention will now be described in accordance with its preferred embodiments, particularly with reference to the accompanying drawings, in which:
FIG. 1 is a cross-sectional schematic view of a prior art piezoelectric MEMS microphone;
fig. 2 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a first embodiment of the present invention;
FIG. 3 is a cross-sectional view of a piezoelectric MEMS microphone in accordance with a second embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a third embodiment of the present invention;
fig. 5 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a fourth embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a fifth embodiment of the present invention;
fig. 7 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a sixth embodiment of the present invention;
fig. 8 is a schematic sectional view of a piezoelectric MEMS microphone according to a seventh embodiment of the present invention;
fig. 9 is a schematic sectional view of a piezoelectric MEMS microphone according to an eighth embodiment of the present invention;
fig. 10 is a schematic sectional view of a piezoelectric MEMS microphone according to a ninth embodiment of the present invention;
fig. 11 is a cross-sectional view schematically showing a piezoelectric MEMS microphone in accordance with a tenth embodiment of the present invention;
fig. 12 is a schematic sectional view of a piezoelectric MEMS microphone according to an eleventh embodiment of the present invention;
fig. 13 is a schematic sectional view of a piezoelectric MEMS microphone according to a twelfth embodiment of the present invention;
fig. 14 is a schematic sectional view of a piezoelectric MEMS microphone according to a thirteenth embodiment of the present invention;
fig. 15 is a schematic cross-sectional view of a piezoelectric MEMS microphone in accordance with a fourteenth embodiment of the present invention;
fig. 16 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a fifteenth embodiment of the present invention;
fig. 17 is a schematic sectional view of a piezoelectric MEMS microphone according to a sixteenth embodiment of the present invention;
fig. 18 is a schematic sectional view of a piezoelectric MEMS microphone according to a seventeenth embodiment of the invention;
fig. 19 is a schematic sectional view of a piezoelectric MEMS microphone according to an eighteenth embodiment of the invention;
fig. 20 is a schematic sectional view of a piezoelectric MEMS microphone according to a nineteenth embodiment of the invention;
fig. 21 is a top view of a piezoelectric MEMS microphone according to a twentieth embodiment of the present invention;
fig. 22 is a schematic sectional view of a piezoelectric MEMS microphone according to a twentieth embodiment of the present invention.
The meaning of each reference number in the figure is, 1-base; 2-an isolating layer; 3-a piezoelectric layer; 4-an electrode layer; 5-a dielectric layer; 6-structural layer.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
A piezoelectric MEMS microphone according to an embodiment of the present invention includes a substrate and one or more acoustic membranes on the substrate, the acoustic membranes including: one or more piezoelectric layers, one or more electrode layers, and one or more dielectric layers stacked in the longitudinal direction, wherein the dielectric layers are located between the piezoelectric layers and the electrode layers.
The noise of a piezoelectric MEMS microphone is mainly determined by the electrical loss of the piezoelectric layer, usually expressed by a loss angle tan δ. The smaller the loss angle tan δ, the lower the electrical loss of the piezoelectric layer, the lower the noise generation of the piezoelectric MEMS microphone, and the higher the signal-to-noise ratio SNR. The electrical losses of the piezoelectric layer are mainly contributed by two parts, including leakage current and dielectric losses. In the embodiment of the invention, the dielectric layer is inserted between the piezoelectric layer and the electrode layer, so that the leakage current flowing through the piezoelectric layer and the dielectric loss in the piezoelectric layer are reduced, the equivalent loss angle tan delta of the piezoelectric layer is reduced, and the signal-to-noise ratio SNR of the piezoelectric MEMS microphone is finally improved.
Preferably, the position of the dielectric layer is close to the longitudinal neutral axis position of the sound diaphragm. It will be understood by those skilled in the art that "close" refers to having the dielectric layer at the location of the neutral longitudinal axis of the diaphragm or at a location offset up/down by a small distance from the neutral longitudinal axis of the diaphragm. Therefore, the noise suppression effect of the dielectric layer can be further amplified on the premise of not deteriorating the sensitivity. The details will be described later in connection with various embodiments. The longitudinal neutral axis refers to the mechanical neutral axis of the composite film in the thickness direction.
The dielectric layer is typically in the form of a thin film and may be less than one tenth the thickness of the piezoelectric layer, which helps to improve device sensitivity. The thickness of the dielectric layer may typically be from 0.1 nm to 1 micron, alternatively from 1 to 100 nm.
The resistivity of the material of the dielectric layer is higher than the resistivity of the material of the piezoelectric layer, so that leakage current in the piezoelectric layer can be reduced; or the dielectric loss coefficient of the material of the dielectric layer is lower than the dielectric loss coefficient of the material of the piezoelectric layer, which can reduce the dielectric loss in the piezoelectric layer. Since the piezoelectric layer of a piezoelectric MEMS microphone is generally composed of AlN or PZT, the material of the dielectric layer should have a resistivity greater than that of AlN or PZT, or the dielectric loss coefficient of the material of the dielectric layer should be smaller than that of AlN or PZT. The material of the dielectric layer can be selected from silicon oxide, silicon nitride, air, gallium nitride, silicon carbide and the like, and vacuum can also be used for replacing the dielectric layer.
When the piezoelectric MEMS microphone includes a plurality of sound films, the plurality of sound films may be separated from each other by a slit. The plurality of sound films can work cooperatively to be spliced into a large-area sound film array so as to realize a large-area device.
The piezoelectric MEMS microphone may further include an isolation layer between the diaphragm and the substrate. The isolation layer may serve as an electrical isolation.
When the acoustic membrane in a piezoelectric MEMS microphone comprises only one piezoelectric layer, the acoustic membrane may further comprise a structural layer, which improves the mechanical strength of the acoustic membrane while providing a strain bias, the structural layer being located at the bottom or top of the acoustic membrane. The material of the structural layer is preferably silicon, which has good mechanical properties.
The boundary position of the dielectric layer may have a boundary support structure, in which case the dielectric layer may be in the form of a continuous film. In addition, the dielectric layer may have an internal support structure at an internal location, in which case the dielectric layer may be in the form of a discontinuous film. The internal support structure can be a structure which is added independently, and can also be an original structural layer. When the dielectric layer is air or vacuum, the boundary supporting structure and the internal supporting structure provide mechanical support, so that the thickness of the dielectric layer is basically kept unchanged when the sound film is excited and bent by sound pressure; on the other hand, the boundary support structure and the internal support structure are not provided with the medium layer, so that the influence degree of the medium layer on the microphone performance can be adjusted by adjusting the ratio of the areas of the boundary support structure and the internal support structure to the area of the medium layer, and a degree of freedom is increased to integrally optimize the sensitivity and the noise of the microphone.
The acoustic membrane may comprise only two electrode layers and one piezoelectric layer stacked alternately in the order: bottom electrode layer, piezoelectric layer, top electrode layer. In some embodiments, the bottom electrode layer may be omitted.
The acoustic membrane may comprise three electrode layers and two piezoelectric layers, alternately stacked in the order: a bottom electrode layer, a lower piezoelectric layer, a middle electrode layer, an upper piezoelectric layer, and a top electrode layer. In this case, the number of dielectric layers may be one layer or two layers. In particular, when the acoustic diaphragm includes a dielectric layer, the dielectric layer may be flexibly disposed, and may be located between the upper piezoelectric layer and the top electrode layer, or between the upper piezoelectric layer and the middle electrode layer, or between the lower piezoelectric layer and the bottom electrode layer; the position of the dielectric layer is preferably close to the neutral axis, i.e. between the upper piezoelectric layer and the middle electrode layer or between the lower piezoelectric layer and the middle electrode layer. When the sound film comprises two dielectric layers, the two dielectric layers are preferably symmetrically arranged, the two dielectric layers can be respectively arranged above and below the middle electrode layer, and the thicknesses of the two dielectric layers are similar or equal.
In the piezoelectric MEMS microphone according to the embodiment of the present invention, the materials of the respective structural layers are as follows.
The material of the substrate may be: single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, and the like.
The material of the isolation layer may be: silicon dioxide, silicon nitride, aluminum nitride, and the like.
The material of the piezoelectric layer may be: polycrystalline or single crystal aluminum nitride (AlN), rare earth element (e.g. scandium) doped aluminum nitride, lead zirconate titanate (PZT), zinc oxide (ZnO), lithium niobate (LiNbO)3) Potassium niobate (KNbO)3) Or lithium tantalate (LiTaO)3) And the like.
The material of the electrode layer may be: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), germanium (Ge), copper (Cu), aluminum (Al), chromium (Cr), arsenic-doped gold and other metals or alloys.
The material of the dielectric layer can be: silicon oxide, silicon nitride, air, gallium nitride, silicon carbide, and the like. Or a vacuum may be used in place of the dielectric layer.
The materials of the structural layer can be: silicon, silicon dioxide, silicon nitride, aluminum nitride, and the like.
In order that those skilled in the art will better understand, the following detailed description lists a number of examples.
Fig. 2 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a first embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each sound membrane comprises two piezoelectric layers 3, three electrode layers 4 and a medium layer 5. A dielectric layer 5 is arranged between the top electrode layer 4 and the upper piezoelectric layer 3. The isolation layer 2 may also be omitted and will not be described in detail later.
Fig. 3 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a second embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each sound membrane comprises two piezoelectric layers 3, three electrode layers 4 and a medium layer 5. The second embodiment differs from the first embodiment mainly in that a dielectric layer 5 is arranged between the bottom electrode layer 4 and the lower piezoelectric layer 3.
In the embodiments shown in fig. 2 and 3, although the noise of the microphone can be reduced by adding the dielectric layer, the sensitivity of the microphone is somewhat deteriorated by adding the dielectric layer.
Fig. 4 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a third embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each sound membrane comprises two piezoelectric layers 3, three electrode layers 4 and a medium layer 5. The difference from the above described embodiments is mainly that the dielectric layer 5 of the piezoelectric MEMS microphone in this embodiment is arranged between the middle electrode layer 4 and the upper piezoelectric layer 3.
Fig. 5 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a fourth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each sound membrane comprises two piezoelectric layers 3, three electrode layers 4 and a medium layer 5. The difference from the above described embodiments is mainly that the dielectric layer 5 of the piezoelectric MEMS microphone in this embodiment is arranged between the middle electrode layer 4 and the lower piezoelectric layer 3.
In the embodiment shown in fig. 4 and 5, the dielectric layer 5 is closer to the longitudinal neutral axis of the sound membrane in fig. 4 and 5 than in the embodiment shown in fig. 2 and 3, and thus the microphone has less sensitivity deterioration after the dielectric layer is inserted; further, when the thickness of the intervening dielectric layer is less than one tenth of the thickness of the piezoelectric layer, the sensitivity of the microphone will be even higher than without the intervening dielectric layer. In the embodiments shown in fig. 4 and 5, the sensitivity is improved while the noise is reduced, and the signal-to-noise ratio SNR of the microphone is greatly improved.
Fig. 6 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a fifth embodiment of the present invention. In fig. 6 in comparison with fig. 2, the boundary position of the top electrode layer 4 has a boundary support structure. Such a structure is preferred when the dielectric layer 5 is air or vacuum. Also, the use of air or vacuum dielectric layers is preferred over dielectric layers of other materials because the air and vacuum resistivities and dielectric loss coefficients are greater than for most dielectric materials. Other technical effects are the same as those of the first embodiment shown in fig. 2.
Fig. 7 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a sixth embodiment of the present invention. In fig. 7 in comparison with fig. 4, the boundary position of the top electrode layer 4 has a boundary support structure. Such a structure is preferred when the dielectric layer 5 is air or vacuum. Also, the use of air or vacuum dielectric layers is preferred over dielectric layers of other materials because the air and vacuum resistivities and dielectric loss coefficients are greater than for most dielectric materials. Other technical effects are the same as those of the third embodiment shown in fig. 4.
Fig. 8 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a seventh embodiment of the present invention. In fig. 8 in comparison with fig. 5, the boundary positions of the top electrode layer 4 and the middle electrode layer 4 each have a boundary support structure. Such a structure is preferred when the dielectric layer 5 is air or vacuum. Also, the use of air or vacuum dielectric layers is preferred over dielectric layers of other materials because the air and vacuum resistivities and dielectric loss coefficients are greater than for most dielectric materials. Other technical effects are the same as those of the fourth embodiment shown in fig. 5.
Fig. 9 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to an eighth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2 (which may be omitted), and left and right acoustic membranes with a slit in between. Each acoustic membrane comprises a piezoelectric layer 3, two electrode layers 4, a medium layer 5, and a structural layer 6 at the bottom of the acoustic membrane. A dielectric layer 5 is located between the top electrode layer 4 and the piezoelectric layer 3. The bottom electrode layer 4 in this embodiment may be omitted. It should be noted that in other embodiments, the structural layer 6 may also be located on the top of the sound film, and those skilled in the art may flexibly set the structural layer according to actual situations, which will not be described in detail later.
Fig. 10 is a cross-sectional view schematically showing a piezoelectric MEMS microphone according to a ninth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each acoustic membrane comprises a piezoelectric layer 3, two electrode layers 4, a medium layer 5, and a structural layer 6 at the bottom of the acoustic membrane. A dielectric layer 5 is located between the bottom electrode layer 4 and the piezoelectric layer 3. The effect is superior because the dielectric layer 5 is closer to the longitudinal neutral axis in fig. 10 than in fig. 9. The bottom electrode layer 4 in fig. 10 can also be omitted, and the dielectric layer 5 is then located between the piezoelectric layer 3 and the structural layer 6.
Fig. 11 is a cross-sectional view schematically showing a piezoelectric MEMS microphone according to a tenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each acoustic membrane comprises a piezoelectric layer 3, two electrode layers 4, a medium layer 5, and a structural layer 6 at the bottom of the acoustic membrane. A dielectric layer 5 is located between the top electrode layer 4 and the piezoelectric layer 3. The edge positions of the top electrode layer 4 have boundary support structures. The bottom electrode layer 4 in this embodiment may also be omitted.
Fig. 12 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to an eleventh embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each acoustic membrane comprises a piezoelectric layer 3, two electrode layers 4, a medium layer 5, and a structural layer 6 at the bottom of the acoustic membrane. A dielectric layer 5 is located between the bottom electrode layer 4 and the piezoelectric layer 3. The edge position of the top electrode layer 4 in this embodiment has a boundary support structure. The effect is superior because the dielectric layer 5 is closer to the longitudinal neutral axis in fig. 12 than in fig. 11. The bottom electrode layer 4 in fig. 12 can also be omitted, and the dielectric layer 5 is then located between the piezoelectric layer 3 and the structural layer 6.
Fig. 13 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a twelfth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each acoustic membrane comprises a piezoelectric layer 3, two electrode layers 4, a medium layer 5, and a structural layer 6 at the bottom of the acoustic membrane. A dielectric layer 5 is located between the top electrode layer 4 and the piezoelectric layer 3. In this embodiment the lower surface of the top electrode layer 4 has an internal support structure (named internal support structure since it is located inside the sound membrane) and the dielectric layer 5 is thus in the form of a discontinuous film.
Fig. 14 is a schematic sectional view of a piezoelectric MEMS microphone according to a thirteenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone includes a substrate 1, an isolation layer 2, and two left and right acoustic membranes, and a slit is formed between the two acoustic membranes. Each acoustic membrane comprises a piezoelectric layer 3, two electrode layers 4, a medium layer 5, and a structural layer 6 at the bottom of the acoustic membrane. A dielectric layer 5 is located between the bottom electrode layer 4 and the piezoelectric layer 3. In this embodiment the lower surface of the piezoelectric layer 3 has an internal support structure and the dielectric layer 5 is therefore in the form of a discontinuous membrane.
Fig. 15 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a fourteenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone comprises a substrate 1, an isolation layer 2 and an integral acoustic membrane, which is not divided by a slit. The sound membrane in this embodiment comprises a piezoelectric layer 3, two electrode layers 4 and a medium layer 5. A dielectric layer 5 is located between the top electrode layer 4 and the piezoelectric layer 3.
Fig. 16 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a fifteenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone comprises a substrate 1, an isolation layer 2 and an integral acoustic membrane, which is not divided by a slit. The sound membrane in this embodiment comprises a piezoelectric layer 3, two electrode layers 4 and a medium layer 5. A dielectric layer 5 is located between the bottom electrode layer 4 and the piezoelectric layer 3.
Fig. 17 is a schematic cross-sectional view of a piezoelectric MEMS microphone according to a sixteenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone comprises a substrate 1, an isolation layer 2 and an integral acoustic membrane, which is not divided by a slit. The sound membrane in this embodiment comprises a piezoelectric layer 3, two electrode layers 4 and a medium layer 5. A dielectric layer 5 is located between the top electrode layer 4 and the piezoelectric layer 3. The edge positions of the top electrode layer 4 have boundary support structures.
Fig. 18 is a schematic sectional view of a piezoelectric MEMS microphone according to a seventeenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone comprises a substrate 1, an isolation layer 2 and an integral acoustic membrane, which is not divided by a slit. The sound membrane in this embodiment comprises a piezoelectric layer 3, two electrode layers 4 and a medium layer 5. A dielectric layer 5 is located between the bottom electrode layer 4 and the piezoelectric layer 3. The edge positions of the top electrode layer 4 have boundary support structures.
Fig. 19 is a schematic sectional view of a piezoelectric MEMS microphone according to an eighteenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone comprises a substrate 1, an isolation layer 2 and an integral acoustic membrane, which is not divided by a slit. The sound membrane in this embodiment comprises a piezoelectric layer 3, two electrode layers 4 and a medium layer 5. A dielectric layer 5 is located between the top electrode layer 4 and the piezoelectric layer 3. In this embodiment the lower surface of the top electrode layer 4 has an internal support structure and thus the dielectric layer 5 is in the form of a discontinuous film.
Fig. 20 is a schematic sectional view of a piezoelectric MEMS microphone according to a nineteenth embodiment of the present invention. In this embodiment, the piezoelectric MEMS microphone comprises a substrate 1, an isolation layer 2 and an integral acoustic membrane, which is not divided by a slit. The sound membrane in this embodiment comprises a piezoelectric layer 3, two electrode layers 4 and a medium layer 5. The main difference between this embodiment and the previous embodiment is that the dielectric layer 5 is located between the bottom electrode layer 4 and the piezoelectric layer 3. In this embodiment the lower surface of the piezoelectric layer 3 has an internal support structure and the dielectric layer 5 is therefore in the form of a discontinuous membrane.
Although the number of the dielectric layers in the sound film is 1 in the above embodiments, this is only for example and not for limitation. Embodiments having multiple dielectric layers are described below.
Fig. 21 is a top view of a piezoelectric MEMS microphone according to a twentieth embodiment of the present invention. In the figure, 11 to 14 are four sound films, 20 are slits, 21 are fixed boundaries, and 15 are lead electrodes. The extraction electrode 15 is used for connection between electrode layers and electrical connection with the outside.
Fig. 22 is a schematic sectional view of a piezoelectric MEMS microphone according to a twentieth embodiment of the present invention. Fig. 22 is also a cross-sectional view at a-a of fig. 21. As can be seen, in the piezoelectric MEMS microphone of this embodiment, each acoustic membrane includes three electrode layers 4, two piezoelectric layers 3, and two dielectric layers 5. Preferably, two dielectric layers 5 are provided above and below the middle electrode layer 4, respectively. Due to the double-layer dielectric layer and the position of the dielectric layer close to the longitudinal neutral axis of the sound film, the suppression effect of the dielectric layer on noise can be further amplified on the premise of not deteriorating the sensitivity; furthermore, when the thicknesses of the two dielectric layers are equal or approximate, and the positions of the two dielectric layers are symmetrically distributed relative to the longitudinal neutral axis, common-mode signals can be inhibited, and the performance of the microphone is further improved.
The invention also proposes an electronic device comprising a piezoelectric MEMS microphone according to the invention.
According to the technical scheme of the invention, the dielectric layer is inserted between the piezoelectric layer and the electrode layer, so that the leakage current flowing through the piezoelectric layer and the dielectric loss in the piezoelectric layer are reduced, the equivalent loss angle tan delta of the piezoelectric layer is reduced, the signal-to-noise ratio SNR of the piezoelectric MEMS microphone is finally improved, and the microphone performance is improved.
The above-described embodiments should not be construed as limiting the scope of the invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (20)
1. A piezoelectric MEMS microphone comprising a substrate and one or more acoustic membranes located over the substrate, the acoustic membranes comprising: one or more piezoelectric layers, one or more electrode layers, and one or more dielectric layers stacked in a longitudinal direction, wherein the dielectric layers are located between the piezoelectric layers and the electrode layers.
2. The piezoelectric MEMS microphone of claim 1, wherein the dielectric layer is located proximate to a longitudinal neutral axis location of the acoustic membrane.
3. The piezoelectric MEMS microphone of claim 1, wherein a thickness of the dielectric layer is less than one tenth of a thickness of the piezoelectric layer.
4. The piezoelectric MEMS microphone of claim 1, wherein the dielectric layer has a thickness of 0.1 nm to 1 micron, or 1 nm to 100 nm.
5. The piezoelectric MEMS microphone of claim 1, wherein a material of the dielectric layer has a higher resistivity than a material of the piezoelectric layer; or the dielectric loss coefficient of the material of the dielectric layer is lower than the dielectric loss coefficient of the material of the piezoelectric layer.
6. Piezoelectric MEMS microphone according to claim 1, characterized in that the material of the dielectric layer is silicon oxide, silicon nitride, air, gallium nitride or silicon carbide or the dielectric layer is replaced by a vacuum.
7. The piezoelectric MEMS microphone of claim 1, wherein the material of the piezoelectric layer is polycrystalline or single crystal aluminum nitride, rare earth doped aluminum nitride, lead zirconate titanate, zinc oxide, lithium niobate, potassium niobate, or lithium tantalate.
8. Piezoelectric MEMS microphone according to any of claims 1 to 7, characterized in that the piezoelectric MEMS microphone comprises a plurality of sound membranes and that the sound membranes are separated from each other by slits.
9. A piezoelectric MEMS microphone as claimed in any one of claims 1 to 7, comprising a diaphragm, said diaphragm being of unitary form.
10. A piezoelectric MEMS microphone as claimed in any one of claims 1 to 7, further comprising an isolation layer located between the acoustic membrane and the substrate.
11. A piezoelectric MEMS microphone as claimed in any one of claims 1 to 7, wherein the acoustic membrane comprises a layer of the piezoelectric layer and further comprises a structural layer, the structural layer being located at the bottom or top of the acoustic membrane.
12. The piezoelectric MEMS microphone of claim 11, wherein the acoustic membrane comprises a dielectric layer between the piezoelectric layer and the bottom structural layer.
13. Piezoelectric MEMS microphone according to one of claims 1 to 7, characterized in that the boundary position of the dielectric layer has a boundary support structure.
14. Piezoelectric MEMS microphone according to any of claims 1 to 7, characterized in that the dielectric layer is in the form of a continuous film.
15. Piezoelectric MEMS microphone according to any of claims 1 to 7, characterized by an internal support structure in an internal position of the dielectric layer and by the fact that it is in the form of a discontinuous film.
16. A piezoelectric MEMS microphone as claimed in any one of claims 1 to 7, wherein said acoustic membrane comprises 3 electrode layers and 2 laminated electrical layers stacked alternately in the order: a bottom electrode layer, a lower piezoelectric layer, a middle electrode layer, an upper piezoelectric layer, and a top electrode layer.
17. Piezoelectric MEMS microphone according to claim 16, wherein the acoustic membrane comprises a layer of dielectric between the upper piezoelectric layer and the top electrode layer, or between the upper piezoelectric layer and the middle electrode layer, or between the lower piezoelectric layer and the bottom electrode layer.
18. The piezoelectric MEMS microphone of claim 16, wherein the acoustic membrane comprises two dielectric layers disposed above and below the middle electrode layer, respectively.
19. The piezoelectric MEMS microphone of claim 18, wherein the two dielectric layers are equal in thickness.
20. An electronic device, characterized in that it comprises a piezoelectric MEMS microphone according to any one of claims 1 to 19.
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