CN113990792A - Wafer transfer apparatus and wafer transfer method - Google Patents
Wafer transfer apparatus and wafer transfer method Download PDFInfo
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- CN113990792A CN113990792A CN202110170645.XA CN202110170645A CN113990792A CN 113990792 A CN113990792 A CN 113990792A CN 202110170645 A CN202110170645 A CN 202110170645A CN 113990792 A CN113990792 A CN 113990792A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
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Abstract
The invention relates to the technical field of semiconductor equipment and discloses a wafer transfer device and a wafer transfer method. Wherein, wafer transfer device includes: the device comprises an adsorption mechanism, a driving mechanism, a first carrying platform and a second carrying platform; the first carrying platform and the second carrying platform are arranged at intervals; the adsorption mechanism comprises an operating head main body, the operating head main body is a main body cavity with a hollow interior, an operating working surface protruding out of the outer wall of the operating head main body is arranged on the outer wall of the operating head main body, and at least one air port communicated with the main body cavity is arranged on the operating working surface and used for adsorbing a wafer; the driving mechanism is used for driving the adsorption mechanism to run between the first stage and the second stage. By using the wafer transfer device provided by the embodiment of the invention, the plurality of wafers are absorbed by the absorption mechanism, so that the plurality of wafers are transferred from the first carrying platform to the second carrying platform, and the wafer transfer efficiency can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a wafer transfer device and a wafer transfer method.
Background
The wafer transfer process in the prior art includes several processes of peeling, transferring and arranging, in which a wafer is firstly peeled from a carrier, then the peeled wafer is transferred, and then the transferred wafer is arranged. The whole wafer transfer process needs a plurality of sets of equipment to jointly work together to respectively complete the operations of stripping, transferring and arranging the wafers. Thus, the efficiency of wafer transfer is easily lowered, and the yield is low.
Disclosure of Invention
The invention provides a wafer transfer device and a wafer transfer method, aiming at solving the technical problems of low wafer transfer efficiency and low yield.
In a first aspect, the present invention provides a wafer transfer apparatus, comprising: the device comprises an adsorption mechanism, a driving mechanism, a first carrying platform and a second carrying platform;
the first carrying platform and the second carrying platform are arranged at intervals;
the adsorption mechanism comprises an operating head main body, the operating head main body is a main body cavity with a hollow interior, an operating working surface protruding out of the outer wall of the operating head main body is arranged on the outer wall of the operating head main body, and at least one air port communicated with the main body cavity is formed in the operating working surface and used for adsorbing a wafer;
the driving mechanism is used for driving the adsorption mechanism to operate between the first stage and the second stage.
Optionally, the adsorption mechanism further comprises: an operating head base and a sealing cover plate, wherein,
the operating head base is fixed on one side of the operating main body opposite to the operating working surface, and a base cavity communicated with the main body cavity is arranged in the operating head base; a cavity opening is formed in the cavity of the base;
the sealing cover plate is detachably fixed on the opening of the cavity in a sealing manner; the sealing cover plate is provided with at least one cover plate through hole which penetrates through the sealing cover plate and is communicated with the base cavity.
Optionally, a boss is arranged on the outer wall of the operating head main body, and the operating working surface is located on one surface of the boss.
Optionally, the air port comprises a plurality of air hole openings, and air hole channels corresponding to the number of the air hole openings are arranged in the outer wall of the operating head main body; one end of each air hole channel is communicated with one air hole opening, and the other end of each air hole channel is communicated with the main body cavity.
Optionally, at least one of the air ports is a strip-shaped opening;
strip-shaped through grooves corresponding to the strip-shaped openings in number are formed in the outer wall of the operating head main body; one end of each strip-shaped through groove is communicated with one strip-shaped opening, and the other end of each strip-shaped through groove is communicated with the main body cavity.
Optionally, the operating head base is integrally formed with the operating head body.
Optionally, the wafer transfer device comprises a laser generator disposed below the adsorption mechanism for irradiating the wafer on the first stage.
Optionally, the laser generator comprises an ultraviolet laser generator.
In a second aspect, the present invention provides a wafer transfer method, comprising the steps of:
controlling an adsorption device to adsorb a first batch of wafers from a first carrying table, wherein the first batch of wafers comprises at least one wafer;
controlling the adsorption device to arrange the first batch of wafers on a second carrying table;
controlling the adsorption device to adsorb a second batch of wafers from the first carrying table, wherein the second batch of wafers comprises at least one wafer;
and arranging the second batch of wafers on the second carrying platform relative to the first batch of wafers according to a preset arrangement rule.
Optionally, before the step of controlling the adsorption device to adsorb the first batch of wafers from the first stage, the method further includes:
and controlling the laser emitted by the laser generator to irradiate the first batch of wafers on the first carrying platform.
Compared with the prior art, the technical scheme provided by the embodiment of the invention has the following advantages:
the wafer transfer device comprises an adsorption mechanism, a driving mechanism, a first carrying platform and a second carrying platform; the first carrying platform and the second carrying platform are arranged at intervals; the adsorption mechanism comprises an operating head main body, the operating head main body is a main body cavity with a hollow interior, an operating working surface protruding out of the outer wall of the operating head main body is arranged on the outer wall of the operating head main body, and at least one air port communicated with the main body cavity is arranged on the operating working surface and used for adsorbing a wafer; the driving mechanism is used for driving the adsorption mechanism to run between the first stage and the second stage. By using the wafer transfer device provided by the embodiment of the invention, the plurality of wafers are absorbed by the absorption mechanism, so that the plurality of wafers are transferred from the first carrying platform to the second carrying platform, and the wafer transfer efficiency can be improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
In the drawings:
fig. 1 is a schematic structural diagram of a wafer transfer apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of an exploded state of an adsorption mechanism provided in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an assembled state of a suction mechanism provided in an embodiment of the present invention;
FIG. 4 is an enlarged view of a portion of FIG. 3 at A;
FIG. 5 is a schematic flow chart of a wafer transfer method according to an embodiment of the present invention;
fig. 6 is a flowchart illustrating a wafer transfer method according to an embodiment of the present invention.
Reference numerals:
100. a wafer transfer device; 110. an adsorption mechanism; 120. a drive mechanism; 130. a first stage; 140. second carrier
A stage; 150. a laser generator;
111. an operating head main body; 112. an operating head base; 113. sealing the cover plate;
1111. operating a working surface; 1112. a gas port; 1121. a base cavity; 1113. a boss; 1131. and a cover plate through hole.
Detailed Description
For a more clear understanding of the technical features, objects and effects of the present invention, embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In the following description, it is to be understood that the orientations and positional relationships indicated by "front", "rear", "upper", "lower", "left", "right", "longitudinal", "lateral", "vertical", "horizontal", "top", "bottom", "inner", "outer", "leading", "trailing", and the like are configured and operated in specific orientations based on the orientations and positional relationships shown in the drawings, and are only for convenience of describing the present invention, and do not indicate that the device or element referred to must have a specific orientation, and thus, are not to be construed as limiting the present invention.
It is also noted that, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," "disposed," and the like are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. When an element is referred to as being "on" or "under" another element, it can be "directly" or "indirectly" on the other element or intervening elements may also be present. The terms "first", "second", "third", etc. are only for convenience in describing the present technical solution, and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated, whereby the features defined as "first", "second", "third", etc. may explicitly or implicitly include one or more of such features. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
Referring to fig. 1 to 4, an embodiment of the invention provides a wafer transfer apparatus 100, including: a suction mechanism 110, a drive mechanism 120, a first stage 130, and a second stage 140.
The first stage 130 and the second stage 140 are spaced apart; the adsorption mechanism 110 comprises an operating head body 111, the operating head body 111 is a hollow body cavity, an operating face 1111 protruding out of the outer wall of the operating head body 111 is arranged on the outer wall of the operating head body 111, and at least one air port 1112 communicated with the body cavity is arranged on the operating face 1111 for adsorbing a wafer; the driving mechanism 120 is used for driving the suction mechanism 110 to move between the first stage 130 and the second stage 140. With the wafer transfer apparatus 100 according to the embodiment of the present invention, the plurality of wafers are adsorbed by the adsorption mechanism 110, so that the plurality of wafers are transferred from the first stage 130 onto the second stage 140, which can improve the wafer transfer efficiency.
The wafer is placed on a tray, which is placed on the first stage 130. A wafer bearing structure is arranged between the wafer and the tray and comprises an adhesive layer and a bearing layer. The bonding layer is connected with the bearing layer, one side of the bonding layer, which is far away from the bearing layer, is bonded with the wafer, and one side of the bearing layer, which is far away from the bonding layer, is connected with the material tray.
The wafer transfer device 100 includes a laser generator 150, and the laser generator 150 is disposed below the adsorption mechanism 110 for irradiating the wafer on the first stage 130. By the irradiation of the laser, the wafer can be easily adsorbed by the adsorption mechanism 110, and the adsorption mechanism 110 transfers the wafer on the first stage 130 to the second stage 140.
The adhesive layer includes an ultraviolet light viscosity-reducing agent which loses its viscosity by being irradiated with ultraviolet light. Thus, the adhesive layer is peeled off from the wafer by irradiation with ultraviolet light. The laser generator 150 includes an ultraviolet laser generator 150. The ultraviolet laser generator 150 may emit ultraviolet light so that the wafer is peeled off from the adhesive layer by the ultraviolet light irradiation.
The adsorption mechanism 110 includes: an operating head main body 111, an operating head base 112 and a sealing cover plate 113. The operating head body 111 is a main working part of the adsorption mechanism 110, and has a hollow main cavity with walls around the main cavity.
The operating head base 112 is fixed on the side of the operating body opposite to the operating working surface 1111, and a base cavity 1121 communicated with the body cavity is arranged in the operating head base 112; a cavity opening is arranged on the base cavity 1121;
the operating head body 111 can be further provided with a gas channel, the gas channel is used for communicating the inner space of the body cavity with the outside, so that the inner space of the body cavity can be sucked or blown through the gas channel, and pressure regulation inside the body cavity can be realized, for example: inhale the gas passage, can be so that the inside negative pressure that produces of main part cavity blows gas passage, can be so that the inside positive pressure that produces of main part cavity.
An operation surface 1111 is provided on an outer wall of the head body 111, and the operation surface 1111 is a surface to be brought into contact with the wafer, and considering that the wafers are located on the same plane when being discharged, the operation surface 1111 may be a plane surface in the embodiment of the present application.
The sealing cover plate 113 can be detachably fixed on the opening of the cavity in a sealing way; at least one cover plate through hole 1131 is disposed on the sealing cover plate 113, and penetrates through the sealing cover plate 113 and is communicated with the base cavity 1121.
The head base 112 is fixed to the head main body 111, and the position of the head base 112 is opposite to the position of the operation surface 1111. In the embodiment of the present application, the relative positions refer to two opposite sides on the operating head main body 111, specifically, the operating face 1111 is located above the operating head, and the operating head base 112 is located below the operating head main body 111.
The operation head base 112 and the operation working surface 1111 are disposed on two opposite sides of the operation head main body 111, so as to make the operation working surface 1111 protrude, and avoid the interference caused by the error contact of the operation head base 112 with the wafer when the operation working surface 1111 contacts with the wafer.
A base cavity 1121 is disposed inside the operating head base 112, and the base cavity 1121 is communicated with the main body cavity of the operating head main body 111. A gas passage opening is formed on a sidewall of the susceptor cavity 1121, and the gas passage opening functions to communicate the susceptor cavity 1121 with the outside.
In the embodiment of the present application, the operating head main body 111 and the operating head base 112 may be a split structure, and are connected and fixed in a detachable manner. It can also be a one-piece structure, for example: the structure of the operating head main body 111 and the operating head base 112 can be obtained by casting through an integral molding technique, or by welding, or by processing the whole material.
In the embodiment of the present application, when the operating head body 111 is an integrated structure, the body cavity and the base cavity 1121 may not be distinguished and serve as the same cavity.
A gas channel opening, which can communicate with the base cavity 1121 and the body cavity, and further communicate with the gas port 1112 on the operating head body 111; when the gas pressure control device is used, the gas passage opening can control the gas pressure inside the susceptor cavity 1121 and the main body cavity, and the gas pressure can be absorbed or blown away through the at least one gas port 1112 on the operation working surface 1111. In particular use, when gas port 1112 is aligned with a wafer, the wafer can be sucked through gas port 1112 if a negative pressure is applied to the gas channel opening and blown through gas port 1112 if a positive pressure is applied to the gas channel opening, allowing the wafer to exit gas port 1112, providing a basis for batch handling of wafers.
The structure of the operating head main body 111 is described in detail below.
In an embodiment of the present application, the surface of the operation working surface 1111 may have any shape in the embodiment of the present application, the operation working surface 1111 may have a long bar shape, and since the volume of the chip is very small, the size of the chip is generally in the order of tens of micrometers, for example: the wafer size of the Micro LED is defined to be less than 75 microns, even less than 50 microns, so the width of the operation working surface 1111 is generally narrow, and in the range of 0.05mm to 0.1mm, the length of the operation working surface 1111 can be set according to needs, and is not limited in this application.
In one embodiment of the present application, one or more air ports 1112 are formed in the operation working surface 1111, and each air port 1112 is communicated with the inner space of the operation head main body 111, and in a specific application, the air port 1112 may be directly formed on the outer wall of the operation head main body 111, preferably on the operation working surface 1111, and then communicated with the inner space of the operation head main body 111.
In the present embodiment, the number of the gas passages may be one or more, and in the present embodiment, the number is not limited. In some embodiments, one or more through holes may be provided on the outer wall of the operating head body 111 as gas passages.
In the embodiment of the present application, the gas channel of the operating head main body 111 may control the gas pressure inside the main body cavity of the operating head main body 111, and the gas pressure inside the main body cavity may perform operations such as adsorption or blow-off through the at least one gas port 1112. In specific use, when the gas port 1112 is aligned to the wafer, if the inside of the head body 111 is a negative pressure, the wafer can be sucked through the gas port 1112, and if the inside of the head body 111 is a positive pressure, the wafer can be blown away through the gas port 1112, so that the wafer leaves the gas port 1112, and the head body 111 provides a basis for batch operation of the wafer.
In the embodiment of the present application, the air ports 1112 provided on the operating surface 1111 are air port openings, and when there are a plurality of air port openings, the plurality of air port openings are arranged in at least one row on the operating surface 1111, and the plurality of air port openings are arranged in one row on the operating surface 1111, alternatively, the plurality of air port openings are arranged in a straight line. The plurality of air hole openings are arranged in a plurality of rows on the operating face 1111, and are arranged in parallel between adjacent rows. Further, considering that the pitch between the chips is uniform, alternatively, in the embodiment of the present application, the pitch between the adjacent air hole openings on the same row is equal.
When the gas port 1112 employs a gas hole opening, the size of the gas port 1112 is smaller than the width of the operation work surface 1111, and in the present embodiment, the aperture of the gas port 1112 is in the range of 0.001mm to 0.05mm in consideration of the size of the chip. The range of the aperture of the gas port 1112 is determined by 15% -80% of the width of the corresponding wafer in the direction perpendicular to the gas port 1112 in the corresponding direction. For example, if the width of the wafer is 1mm, the aperture of the gas port 1112 may be in the range of 0.15mm to 0.8 mm. The aperture of the air port 1112 needs to be designed and selected according to different products by matching with other factors such as air pressure and the like.
In addition, the air port 1112 may directly communicate with the internal space of the operation head main body 111 through the outer wall of the operation face 1111. In addition, in consideration of the stability of the air flow, the air port 1112 may be communicated with the inner space of the operating head main body 111 through an air port passage. The number of the air hole channels corresponds to the number of the air hole openings, one end of each air hole channel is communicated with one corresponding air hole channel, and the other end of each air hole channel is communicated with the inside of the operating head main body 111.
In the embodiment of the present application, the air ports 1112 arranged on the operation working surface 1111 are strip-shaped openings, and strip-shaped through slots corresponding to the number of the strip-shaped openings are arranged inside the outer wall of the operation head main body 111; one end of each strip-shaped through groove is communicated with one strip-shaped opening, and the other end of each strip-shaped through groove is communicated with the main body cavity.
In one embodiment of the present application, the strip-shaped opening is one, and optionally, the strip-shaped opening is linear. The strip-shaped openings are multiple and are arranged in parallel between every two adjacent strip-shaped openings. In addition, a plurality of air ports 1112 may be provided in a spaced arrangement in consideration of uniform spacing between chips. The ports 1112 may be individual circular holes, may be intermittent strip-shaped holes, or may be a continuous linear port.
In an embodiment of the present application, when the gas operating head contacts the chip, in order to avoid the gas operating head from touching the chip by mistake except for the operating face 1111, the operating face 1111 may be made to protrude more from the outer wall of the operating head main body 111, for this reason, a boss 1113 may be disposed on the outer wall of the operating head main body 111, and the operating face 1111 is located on the boss 1113.
In this application embodiment, the structure of boss 1113 does not do the restriction, and the structure of boss 1113 can make the working face more bulge the operating head main part 111, reduces the volume of operating head main part 111, and then when the gas operating head removed, can reduce the misconnection of gas operating head and chip, and then lead to the chip by the misconnection and misplace. The projection 1113 may be a square edge, the projection 1113 may be a wedge-shaped edge, or the projection 1113 may be cylindrical or have other arc-shaped structures.
Referring to fig. 5 and 6, an embodiment of the invention provides a wafer transfer method, including the following steps:
s110: controlling the adsorption device to adsorb a first batch of wafers from the first carrier 130, wherein the first batch of wafers comprises at least one wafer;
s120: controlling the adsorption device to arrange the first batch of wafers on the second stage 140;
s130: controlling the adsorption device to adsorb a second batch of wafers from the first carrier 130, wherein the second batch of wafers comprises at least one wafer;
s140: a second batch of wafers is arranged on the second stage 140 relative to the first batch of wafers according to a preset arrangement rule.
With the wafer transfer method according to the embodiment of the present invention, the plurality of wafers are adsorbed from the first stage 130 by the adsorption device and arranged on the second stage 140, and the plurality of wafers are adsorbed from the first stage 130 by the adsorption device and arranged on the second stage 140. And the second batch of wafers are arranged on the second carrying platform 140 relative to the first batch of wafers according to the preset arrangement rule, so that the wafers can be transferred in a large amount, the second batch of wafers can be arranged on the second carrying platform 140 according to the preset arrangement rule, and the wafers are transferred and arranged.
In one embodiment, at S110: the step of controlling the suction device to suck the first batch of wafers from the first stage 130 further comprises:
s100: the laser generator 150 is controlled to emit laser light to irradiate the first batch of wafers on the first stage 130.
This facilitates the transfer of the wafer on the first stage 130 to the second stage 140 by the suction device, and improves the wafer transfer efficiency.
It is to be understood that the foregoing examples, while indicating the preferred embodiments of the invention, are given by way of illustration and description, and are not to be construed as limiting the scope of the invention; it should be noted that, for those skilled in the art, the above technical features can be freely combined, and several changes and modifications can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention; therefore, all equivalent changes and modifications made within the scope of the claims of the present invention should be covered by the claims of the present invention.
Claims (10)
1. A wafer transfer apparatus, comprising: the device comprises an adsorption mechanism, a driving mechanism, a first carrying platform and a second carrying platform;
the first carrying platform and the second carrying platform are arranged at intervals;
the adsorption mechanism comprises an operating head main body, the operating head main body is a main body cavity with a hollow interior, an operating working surface protruding out of the outer wall of the operating head main body is arranged on the outer wall of the operating head main body, and at least one air port communicated with the main body cavity is formed in the operating working surface and used for adsorbing a wafer;
the driving mechanism is used for driving the adsorption mechanism to operate between the first stage and the second stage.
2. The wafer transfer device of claim 1, wherein the suction mechanism further comprises: an operating head base and a sealing cover plate, wherein,
the operating head base is fixed on one side of the operating main body opposite to the operating working surface, and a base cavity communicated with the main body cavity is arranged in the operating head base; a cavity opening is formed in the cavity of the base;
the sealing cover plate is detachably fixed on the opening of the cavity in a sealing manner; the sealing cover plate is provided with at least one cover plate through hole which penetrates through the sealing cover plate and is communicated with the base cavity.
3. The wafer transfer device of claim 2, wherein the outer wall of the operating head body is provided with a boss, and the operating face is located on one face of the boss.
4. The wafer transfer device according to claim 2, wherein the gas port comprises a plurality of gas port openings, and gas port channels corresponding to the number of the gas port openings are arranged inside the outer wall of the operating head body; one end of each air hole channel is communicated with one air hole opening, and the other end of each air hole channel is communicated with the main body cavity.
5. The wafer transfer device of claim 1, wherein at least one of said gas ports is a strip-shaped opening; strip-shaped through grooves corresponding to the strip-shaped openings in number are formed in the outer wall of the operating head main body; one end of each strip-shaped through groove is communicated with one strip-shaped opening, and the other end of each strip-shaped through groove is communicated with the main body cavity.
6. The wafer transfer device of any one of claims 2 to 5, wherein the operating head base is integrally formed with the operating head body.
7. The wafer transfer device according to claim 1, wherein the wafer transfer device comprises a laser generator disposed below the suction mechanism for irradiating the wafer on the first stage.
8. The wafer transfer device of claim 7, wherein the laser generator comprises an ultraviolet laser generator.
9. A wafer transfer method, comprising the steps of:
controlling an adsorption device to adsorb a first batch of wafers from a first carrying table, wherein the first batch of wafers comprises at least one wafer;
controlling the adsorption device to arrange the first batch of wafers on a second carrying table;
controlling the adsorption device to adsorb a second batch of wafers from the first carrying table, wherein the second batch of wafers comprises at least one wafer;
and arranging the second batch of wafers on the second carrying platform relative to the first batch of wafers according to a preset arrangement rule.
10. The method of claim 9, wherein the step of controlling the suction device to suck the first batch of wafers from the first stage further comprises:
and controlling the laser emitted by the laser generator to irradiate the first batch of wafers on the first carrying platform.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110170645.XA CN113990792A (en) | 2021-02-08 | 2021-02-08 | Wafer transfer apparatus and wafer transfer method |
| TW111104280A TW202232641A (en) | 2021-02-08 | 2022-02-07 | Device and method for transferring wafers |
| PCT/CN2022/075364 WO2022166953A1 (en) | 2021-02-08 | 2022-02-07 | Wafer transfer device and wafer transfer method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110170645.XA CN113990792A (en) | 2021-02-08 | 2021-02-08 | Wafer transfer apparatus and wafer transfer method |
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| Publication Number | Publication Date |
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| CN113990792A true CN113990792A (en) | 2022-01-28 |
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| CN202110170645.XA Pending CN113990792A (en) | 2021-02-08 | 2021-02-08 | Wafer transfer apparatus and wafer transfer method |
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| CN (1) | CN113990792A (en) |
| TW (1) | TW202232641A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114779374A (en) * | 2022-03-16 | 2022-07-22 | 苏州苏纳光电有限公司 | Automatic equipment for reflow process in optical communication chip manufacturing |
| WO2022166953A1 (en) * | 2021-02-08 | 2022-08-11 | 深圳市丰泰工业科技有限公司 | Wafer transfer device and wafer transfer method |
| CN114779374B (en) * | 2022-03-16 | 2024-06-04 | 苏州苏纳光电有限公司 | Automatic equipment for reflow process in optical communication chip manufacturing |
-
2021
- 2021-02-08 CN CN202110170645.XA patent/CN113990792A/en active Pending
-
2022
- 2022-02-07 TW TW111104280A patent/TW202232641A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022166953A1 (en) * | 2021-02-08 | 2022-08-11 | 深圳市丰泰工业科技有限公司 | Wafer transfer device and wafer transfer method |
| CN114779374A (en) * | 2022-03-16 | 2022-07-22 | 苏州苏纳光电有限公司 | Automatic equipment for reflow process in optical communication chip manufacturing |
| CN114779374B (en) * | 2022-03-16 | 2024-06-04 | 苏州苏纳光电有限公司 | Automatic equipment for reflow process in optical communication chip manufacturing |
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| TW202232641A (en) | 2022-08-16 |
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