CN113985679A - Optical phased array system and preparation method thereof - Google Patents

Optical phased array system and preparation method thereof Download PDF

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Publication number
CN113985679A
CN113985679A CN202111356634.7A CN202111356634A CN113985679A CN 113985679 A CN113985679 A CN 113985679A CN 202111356634 A CN202111356634 A CN 202111356634A CN 113985679 A CN113985679 A CN 113985679A
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array
optical
silicon dioxide
layer
optical waveguide
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宋俊峰
陈柏松
李盈祉
张蓝萱
李雪妍
郜峰利
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Jilin University
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Jilin University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/292—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by controlled diffraction or phased-array beam steering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/295—Analog deflection from or in an optical waveguide structure]
    • G02F1/2955—Analog deflection from or in an optical waveguide structure] by controlled diffraction or phased-array beam steering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching

Abstract

The invention provides an optical phased array system and a preparation method thereof, wherein the optical phased array system comprises: the phase controller array is connected with the optical waveguide array; the light guide grating array is connected with the phase controller array, the electrode units are arranged at two ends of the light guide grating array, the light guide grating array is wrapped by the cladding, the laser beam after light splitting is transmitted to the phase controller array through the light guide array, the laser beam enters the light guide grating array after phase modulation, the change of the refractive index of the cladding is controlled by controlling the voltage applied to the electrode units, the scattering angle of the light guide grating array is controlled, and the emitting angle of the light beam output by the light guide grating array is controlled. The optical phased array system and the preparation method thereof provided by the invention can realize the longitudinal deflection adjustment of the light beam by adjusting the voltage, and have the advantages of simple structure, simple process, strong operability and low cost.

Description

Optical phased array system and preparation method thereof
Technical Field
The invention belongs to the technical field of chips, and particularly relates to an optical phased array system and a preparation method thereof.
Background
The laser radar is a core component for collecting three-dimensional space information by an automatic driving vehicle and an unmanned carrying tool and realizing environment remote sensing. To meet the requirements of autonomous driving, the lidar needs to have precise beam steering capabilities, including beam scanning speed, scanning range, and scanning accuracy. Traditional mechanical type laser radar is bulky, and inside comprises accurate mechanical structure, and manufacturing cost is high, is unfavorable for laser radar's extensive commercial. At present, compared with a mechanical laser radar, a solid-state laser radar solution represented by an optical phased array has the advantages of small volume, low cost and high scanning speed. Space detection applications such as lidar generally require two-dimensional beam scanning capabilities. Although the optical phased array chip manufactured by the CMOS optoelectronic integration technology can realize the beam scanning of over 100 degrees in the transverse direction by using a phase modulation method, the large-angle steering of the other dimension is difficult. At present, the academia generally adopts a waveguide grating as a transmitter, and then changes the input wavelength to realize longitudinal beam deflection, however, the efficiency of wavelength-driven beam scanning is low, and a wavelength tuning range of over 100nm is often required to realize a steering range of over 10 °, however, a common tuned laser with such a large wavelength tuning range cannot be realized, and the tunable laser is generally expensive in manufacturing cost, which is not beneficial to the large-scale popularization of the optical phased array type laser radar. Another method that is often used is to implement longitudinal beam deflection by applying voltage to the waveguide grating and generating a heating mode of temperature change, and if the beam deflection of 10 degrees is to be implemented, a temperature control range of hundreds of degrees is required, which is difficult to implement in practical application.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides an optical phased array system and a preparation method thereof.
The present invention provides an optical phased array system, comprising: the phase controller comprises an optical waveguide array, a phase controller array, an optical waveguide grating array, an electrode unit and a cladding layer which are sequentially connected; wherein the content of the first and second substances,
the optical waveguide grating array is connected with the phase controller array, the electrode units are arranged at two ends of the optical waveguide grating array, and the optical waveguide grating array is wrapped by the cladding.
The laser beam after light splitting is transmitted to the phase controller array through the optical waveguide array, enters the optical waveguide grating array after being subjected to phase modulation through the phase controller array, and controls the change of the refractive index of the cladding by controlling the voltage applied to the electrode unit, so that the scattering angle of the optical waveguide grating array is controlled, and the emergent angle of the light beam output by the optical waveguide grating array is controlled.
Further, when the material of the cladding is liquid crystal and the refractive index of the cladding varies in the range of 1.5-1.7, the output beam angle of the output beam of the optical waveguide grating array is at least 7.5 °.
Further, the electrode units are arranged in the parallel direction or the vertical direction of the optical waveguide grating array;
the electrode material of the electrode unit is one or two of a metal material, a transparent conductive material or doped silicon.
Further, the waveguide type of the optical waveguide grating array is a waveguide having a size smaller than that of the single-mode waveguide, a slit-type waveguide, a silicon ridge-type waveguide, or a double-layer waveguide.
The laser light beam is coupled into the optical coupler and then transmitted to the optical splitter to be split, and the split laser light beam enters the optical waveguide array.
Further, the optical phased array system is integrated on a chip.
The invention also provides a preparation method of the optical phased array system, which comprises the following steps:
s1, growing silicon dioxide on the substrate to prepare and finish the first silicon dioxide layer;
s2, depositing silicon nitride or silicon on the first silicon dioxide layer by using a plasma enhanced chemical vapor deposition method or a low-pressure chemical vapor deposition method, and etching the silicon nitride or the silicon after deposition to finish the preparation of the coupler, the optical beam splitter, the waveguide array and the optical waveguide grating array;
s3, preparing a protective layer in the first area above the prepared optical waveguide grating array;
s4, preparing a phase controller array in a second area above the prepared waveguide array;
s5, etching a groove in a fourth area at two ends of the prepared optical waveguide grating array, and completing the preparation of an electrode unit in a mode of depositing metal or doping silicon in the groove;
and S6, etching to remove the protective layer, preparing a cladding, and packaging by adopting glass or a transparent electrode.
Further, in step S3, the specific steps of preparing the protective layer are:
s301, growing silicon dioxide above the prepared waveguide array and the prepared optical waveguide grating array to complete preparation of a second silicon dioxide layer;
s302, after the second silicon dioxide layer is subjected to surface smoothing treatment, polycrystalline silicon is deposited in a first area, and the size of the first area is matched with that of the optical waveguide grating array, so that the preparation of the protective layer is completed.
Further, in step S4, the specific steps of preparing the phase controller array are:
s401, growing silicon dioxide above the prepared protective layer and above the second silicon dioxide layer to complete preparation of a third silicon dioxide layer;
s402, depositing titanium nitride in a second area of the third silicon dioxide layer to finish the preparation of the titanium nitride layer, and etching the titanium nitride layer to obtain a heating wire with a set pattern;
s403, growing silicon dioxide above the prepared heating wire and above the third silicon dioxide layer to complete preparation of the fourth silicon dioxide layer;
s404, forming a hole in the third area of the fourth silicon dioxide layer and depositing a phase control electrode to finish the preparation of the phase controller array.
Further, in step S6, the cladding layer is prepared by the following specific steps:
and forming a groove-shaped region in the fourth region above the waveguide grating array by etching by using an etching method, and injecting liquid crystal into the groove-shaped region.
Compared with the prior art, the invention has the beneficial effects that:
1. the optical phased array system provided by the invention can realize transverse deflection adjustment of light beams by adjusting voltage;
2. the optical phased array system provided by the invention can realize two-dimensional scanning of the light beam by utilizing the photoelectric effect of the liquid crystal material to adjust the longitudinal deflection of the light beam, and the system has a simple structure;
3. the preparation method of the optical phased array system provided by the invention has the advantages of simple process, strong operability and low cost.
Drawings
Fig. 1(a) and 1(b) are respectively schematic structural diagrams of an optical phased array system in an embodiment of the present invention;
FIG. 2 is a schematic diagram of the diffraction principle of a waveguide grating in an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating the principle of voltage modulation of refractive index of liquid crystal molecules in an embodiment of the present invention;
FIG. 4 is a schematic diagram showing a first structure of an optical phased array system in embodiment 1 of the present invention;
FIGS. 5(a) and 5(b) are schematic diagrams illustrating the relationship between the refractive index and the diffraction angle in the optical phased array system according to the embodiment of the present invention;
fig. 6 is a schematic diagram of a second structure of the optical phased array system in embodiment 2 of the present invention;
fig. 7 is a schematic flowchart of a method for manufacturing an optical phased array system in embodiment 3 of the present invention;
FIG. 8 is a third structural diagram of an embodiment of the present invention for fabricating an optical phased array system;
FIG. 9 is a fourth block diagram of an embodiment of the present invention for fabricating an optical phased array system;
FIG. 10 is a fifth structural view for producing an optical phased array system in embodiment 3 of the present invention;
FIG. 11 is a sixth structural view for producing an optical phased array system in embodiment 3 of the present invention;
FIG. 12 is a seventh structural view for producing an optical phased array system in embodiment 4 of the present invention;
fig. 13 is an eighth structural view of the optical phased array system manufactured in embodiment 5 of the present invention.
Wherein the reference numerals are as follows:
the optical waveguide comprises an optical waveguide 1, a phase controller 2, a cladding-wrapped optical waveguide grating 3, an optical waveguide grating 301, a cladding 302, an electrode unit 4, a first electrode 401, a second electrode 402, an optical coupler 5, an optical beam splitter 6, a silicon substrate 7, a first silica layer 8, a second silica layer 9, a first region 10, a third silica layer 11, a second region 12, a fourth silica layer 13, a third region 14 and a fourth region 15.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1(a) and 1(b) each show a schematic structural diagram of an optical phased array system in an embodiment of the present invention.
An embodiment of the present invention provides an optical phased array system, as shown in fig. 1(a) and 1(b), including: the array of optical waveguides 1 and the array of phase controllers 2 are connected in sequence, and further comprise an array of optical waveguide gratings 301, a first electrode 401, a second electrode 402 and a cladding layer 302 of liquid crystal material.
The optical waveguide grating 301 array is connected with the phase controller 2 array, the electrode units 4 are arranged at two ends of the optical waveguide grating 301 array, the distance between the first electrode 401 and the second electrode 402 is 5 μm, and the optical waveguide grating 301 array is wrapped by the cladding 302 of liquid crystal material. The plurality of laser beams after being split sequentially enter the optical waveguide 1 array and the phase controller 2 array, and enter the optical waveguide grating 301 array after being subjected to phase modulation. Controlling the phase modulator array to control the phase of the light beam in each optical waveguide 1 in the optical waveguide 1 array, and realizing transverse scanning in two-dimensional scanning through phase adjustment; by controlling the magnitude of the voltage applied to the electrode unit 4, the change of the refractive index of the cladding 302 is controlled, the diffraction angle of the optical waveguide grating 301 array is controlled, the change of the emergent angle of the output light beam of the optical waveguide grating 301 array is controlled, and the longitudinal scanning in the two-dimensional scanning is realized. The phase modulation mode of the phase controller 2 array in the embodiment of the present invention is to change the refractive index of the phase controller 2 by changing the temperature of the phase controller 2, thereby realizing phase adjustment. The method for changing the phase of the phase controller 2 in the prior art can be applied, and can be selected according to actual situations, which is not limited in the embodiment of the present invention.
In the optical phased array system in the embodiment of the invention, the optical waveguide grating 301 array is modulated by the cladding 302 of the liquid crystal material, the voltage is applied to the electrode unit 4, and the refractive index of the cladding 302 of the liquid crystal material is changed by the magnitude of the applied voltage, so that the scattering direction and the angle of light are changed. So that a longitudinally scanned beam deflection can be achieved by means of a laser beam of one wavelength and without the need for changing the temperature.
The principle of beam deflection longitudinal scanning in the optical phased array system in the embodiment of the invention is as follows:
the diffraction principle of the waveguide grating is shown in fig. 2, formula (1) can be obtained by diffraction of the waveguide grating, and formula (2) can be obtained by arranging formula (1) to obtain the diffraction angle of one optical waveguide grating 301 in the optical waveguide grating 301 array:
Figure BDA0003357778400000061
Figure BDA0003357778400000062
wherein λ represents the wavelength of the laser beam; n iseffRepresents the effective refractive index of the laser beam propagating in the optical waveguide 1; l isperiodRepresents the period length of the optical waveguide grating 301; m denotes the diffraction order of the optical waveguide grating 301, and m is 0, ± 1, ± 2.;
Figure BDA0003357778400000063
representing the diffraction angle.
The liquid crystal molecules are uniaxial birefringent substances, the optical properties of which are similar to those of uniaxial crystals, and the refractive index ellipsoid of which is shown in fig. 3(a), the long axis of the liquid crystal molecules is also called the optical axis of the liquid crystal molecules, and the plane formed by the propagation direction of the light beam and the optical axis of the liquid crystal molecules is called the principal plane. The polarization direction of the light beam is perpendicular to the main plane and is o light, and the refractive index is noThe polarization direction of the light beam in the main plane is e light, and the refractive index is ne. When the applied bias is larger than the threshold voltage of the liquid crystal, as shown in fig. 3(b), the alignment direction of the liquid crystal molecules changes by an angle θ, and the refractive index of e-light of the liquid crystal molecules is shown in formula (3):
Figure BDA0003357778400000064
as shown in fig. 3(c), when the molecules are vertically aligned with further increase in voltage, the refractive index of e-light is n (θ) ═ noThe refractive index of e light in liquid crystal molecules can be realized to be n by voltage modulationoAnd neTo change between.
The effective refractive index of the optical phased array system depends on the material of the cladding layer 302, the refractive index of the array of optical waveguide gratings 301, and the structural dimensions of the array of optical waveguide gratings 301. The liquid crystal is used as a material of the cladding 302, the change of the refractive index of the cladding 302 can be realized through voltage modulation, so that the diffraction angle of the optical waveguide grating 301 array is changed, the change of the emergent angle of the output light beam of the optical waveguide grating 301 array is controlled, and the longitudinal scanning in the two-dimensional scanning of the optical phased array system is completed. In practical application, the size and the refractive index of the optical waveguide grating 301 array structure can be changed in a matched manner, so that the effective refractive index of the optical phased array system is changed, the diffraction angle of the optical waveguide grating 301 is changed, and the large-range turning of light beams is realized.
The present embodiment provides a preferred embodiment, when the refractive index of the cladding 302 of liquid crystal material varies from 1.5 to 1.7, the variation angle of the output beam of the array of optical waveguide gratings 301 is at least 7.5 °. In the optical waveguide grating 301 according to the embodiment of the present invention, when a voltage is applied by the electrode unit 4 and the voltage is 0V, the diffraction angle of the optical waveguide grating 301 using liquid crystal as a material of the cladding layer 302 is about 8 °; when the voltage is 1V, the diffraction angle is about 5 degrees, namely the emergent beam angle is 3 degrees; at a voltage of 2V, the diffraction angle is about 2 °, i.e. the light exit beam angle is 6 °. The voltage continues to increase and the diffraction angle tends to a fixed value, which is about 0.5 ° when the voltage reaches above 5V, i.e. the exit beam angle is 7.5 °. In the optical phased array system in the embodiment of the invention, the optical waveguide grating 301 array is modulated by the cladding 302 of the liquid crystal material, the voltage is applied to the electrode unit 4, and the refractive index of the cladding 302 of the liquid crystal material is changed by the magnitude of the applied voltage, so that the scattering direction and the angle of light are changed. So that longitudinally scanned beam deflection can be achieved by a laser beam of one wavelength without the need for temperature changes, providing a new solid-state beam scanning scheme. Large longitudinal angular deflections can be achieved by applying a modest voltage.
The embodiment of the present invention provides a preferred embodiment, and the electrode unit 4 is disposed in the parallel direction or the vertical direction of the array of optical waveguide gratings 301.
The embodiment of the present invention provides a preferred embodiment, the material of the first electrode 401 and the second electrode 402 is one or two of a metal material, a transparent conductive material, or doped silicon, and the material is compatible with a CMOS process.
The embodiment of the present invention provides a preferred embodiment, and the grating type of the optical waveguide grating 301 array is a waveguide grating, a slit-type waveguide grating, a silicon ridge-type waveguide grating, or a double-layer waveguide grating, which is smaller than a single-mode waveguide in size. Any type of grating may be selected in a specific situation, which is not limited in the embodiment of the present invention.
The embodiment of the present invention provides a preferred embodiment, the optical phased array system further includes an optical coupler 5 and an optical splitter 6, the laser beam is coupled into the optical coupler 5, then transmitted to the optical splitter 6 for splitting, and the split laser beam enters the optical waveguide 1 array.
The embodiment of the present invention provides a preferred embodiment, and the optical phased array system is integrated on a chip.
Example 1:
an optical phased array system, as shown in fig. 4, includes: the array of optical waveguides 1 and the array of phase controllers 2 connected in sequence further comprise an array of optical waveguide gratings 301, a first electrode 401 of aluminum material, a second electrode 402 of aluminum material and a cladding 302 of liquid crystal material.
The optical waveguide grating 301 array is connected to the phase controller 2 array, a first electrode 401 of aluminum material and a second electrode 402 of aluminum material are respectively disposed at two ends of the optical waveguide grating 301 array in the vertical direction, and the optical waveguide grating 301 array is wrapped by a cladding 302 of liquid crystal material.
As shown in fig. 5(a) and 5(b), in preferred embodiment 1 provided by the present invention, by applying a voltage to the first electrode 401 of aluminum material and the second electrode 402 of aluminum material to change the refractive index of the cladding 302 of liquid crystal material, when the refractive index of the cladding 302 of liquid crystal material is changed from 1.5 to 1.7, a change in the steering angle of about 7.5 ° can be achieved.
Example 1 of the present invention provides a preferred embodiment, and the waveguide type of the optical waveguide grating 301 array is a waveguide having a size smaller than that of a single-mode waveguide, a slit-type waveguide, a silicon ridge-type waveguide, or a double-layer waveguide.
Example 2:
an optical phased array system, as shown in fig. 6, includes: the array of optical waveguides 1 and the array of phase controllers 2, which are connected in sequence, further comprise a slit waveguide type grating array, a first electrode 401 of transparent indium tin oxide material, a second electrode 402 of doped silicon material and a cladding 302 of liquid crystal material.
The optical waveguide grating 301 array is connected with the phase controller 2 array, a first electrode 401 of transparent indium tin oxide material and a second electrode 402 of doped silicon material are respectively arranged at two ends of the optical waveguide grating 301 array in the parallel direction, and the optical waveguide grating 301 array is wrapped by a cladding 302 of liquid crystal material.
As shown in fig. 5(a) and 5(b), in a preferred embodiment 2 provided by the present invention, by applying a voltage to the first electrode 401 of transparent indium tin oxide material and the second electrode 402 of doped silicon material to change the refractive index of the cladding 302 of liquid crystal material, when the refractive index of the cladding 302 of liquid crystal material is changed from 1.5 to 1.7, a change in the turning angle of about 7.5 ° can be achieved.
Example 3:
the invention also provides a method for manufacturing the optical phased array system.
Fig. 7 is a flowchart showing a method of manufacturing an optical phased array system in embodiment 3 of the present invention. Embodiment 3 of the present invention provides a method for manufacturing an optical phased array system, as shown in fig. 7, including the following steps:
s1, as shown in fig. 8 and 9, growing 5 μm of silicon dioxide on the silicon substrate 7 to prepare a first silicon dioxide layer 8;
the first silica layer 8 is prepared to be used as a lower cladding layer 302 for subsequently preparing the coupler, the optical beam splitter 6, the waveguide array and the optical waveguide grating 301 array.
S2, depositing 340nm silicon nitride or silicon on the first silicon dioxide layer 8 by using a plasma enhanced chemical vapor deposition method (PECVD) or a low-pressure chemical vapor deposition method (LPCVD), and etching the silicon nitride or silicon after deposition to prepare and complete the coupler, the optical beam splitter 6, the waveguide array and the optical waveguide grating 301 array;
s3, preparing a protective layer in the first area 10 above the prepared optical waveguide grating 301 array;
s4, preparing 12 an array of phase controllers 2 in a second area above the prepared waveguide array;
s5, etching grooves in fourth areas 15 at two ends of the prepared optical waveguide grating 301 array, and preparing electrode units 4 in a mode of depositing metal or doping silicon in the grooves;
as shown in fig. 10, in embodiment 3 of the present invention, aluminum metal is deposited into the trenches etched in the fourth region 15, and the prepared electrode units 4 are the first electrode 401 and the second electrode 402 made of aluminum.
And S6, etching to remove the protective layer, preparing a cladding 302, and packaging by adopting glass or a transparent electrode.
Embodiment 3 of the present invention provides a preferable implementation manner, and in step S3, the specific steps of preparing the protective layer are as follows:
s301, growing silicon dioxide above the prepared waveguide array and the optical waveguide grating 301 array to prepare and complete a second silicon dioxide layer 9;
s302, performing surface smoothing treatment on the second silicon dioxide layer 9, wherein the surface of the second silicon dioxide layer 9 left after the surface smoothing treatment and the silicon dioxide layer left above the optical waveguide grating 301 array are 100nm, depositing polysilicon of 100nm in a first area 10, and matching the size of the first area 10 with the size of the optical waveguide grating 301 array to finish the preparation of the protective layer.
The protection principle of the protective layer utilizes the selectivity of etching liquid, and polysilicon is not etched in the process of etching silicon dioxide in the subsequent preparation steps, so that the optical waveguide grating 301 array on the lower layer of the polysilicon is not damaged. And then, in the process of removing the protective layer, the polysilicon is etched, and the silicon dioxide is not etched in the process of removing the protective layer, so that only the protective layer is removed without damaging the optical waveguide grating 301 array. The method for preparing the protective layer can be used for protecting waveguide gratings made of various materials in the process of manufacturing the liquid crystal waveguide grating.
Embodiment 3 of the present invention provides a preferred implementation manner, and in step S4, the specific steps of preparing the phase controller 2 array are as follows:
s401, growing 1.5 mu m of silicon dioxide above the prepared protective layer and above the second silicon dioxide layer 9 to prepare a third silicon dioxide layer 11;
s402, depositing 120nm titanium nitride in a second area 12 of the third silicon dioxide layer 11, and etching the titanium nitride to obtain a heating wire with a set pattern;
s403, growing 300nm of silicon dioxide above the prepared heating wire and above the third silicon dioxide layer 11 to prepare a fourth silicon dioxide layer 13;
s404, forming a hole in the third area 14 of the fourth silicon dioxide layer 13 and depositing a phase control electrode to prepare and finish the phase controller 2 array.
The phase controller 2 array prepared in embodiment 3 of the present invention is prepared by setting the second area 12 on the prepared optical waveguide 1, depositing 120nm titanium nitride in the second area 12, etching the titanium nitride to obtain a heating wire with a set pattern, and heating the optical waveguide 1 made of silicon nitride by the titanium nitride heating wire, so as to change the refractive index of the optical waveguide 1, further change the phase, and thus, the phase controller 2 array is prepared.
Embodiment 3 of the present invention provides a preferred implementation manner, and in step S6, the specific steps of preparing the cladding 302 are as follows:
the first silicon dioxide layer 8, the second silicon dioxide layer 9, the third silicon dioxide layer 11 and the fourth silicon dioxide layer 13 are etched deeply to expose the waveguide array and the optical waveguide grating 301 array, the protective layer is removed by etching, a groove-shaped area is formed in the fourth area 15 above the waveguide grating array by etching through a windowing etching method, liquid crystal is injected into the groove-shaped area to complete the preparation of the cladding 302, and glass is used for packaging. The optical phased array system prepared in example 3 of the present invention is shown in fig. 11.
Example 4:
FIG. 7 is a flow chart illustrating a method of fabricating an optical phased array system in an embodiment of the invention. Embodiment 4 of the present invention provides a method for manufacturing an optical phased array system, as shown in fig. 7, including the following steps:
s1, as shown in fig. 8 and 9, growing 5 μm of silicon dioxide on the silicon substrate 7 to prepare a first silicon dioxide layer 8;
s2, depositing 340nm silicon nitride or silicon on the first silicon dioxide layer 8 by using a PECVD or LPCVD method, etching the silicon nitride or silicon after deposition, and preparing and finishing the coupler, the optical beam splitter 6, the waveguide array and the ridge waveguide grating array;
s3, preparing a protective layer in the first area 10 above the prepared ridge waveguide grating array;
s4, preparing 12 an array of phase controllers 2 in a second area above the prepared waveguide array;
and S5, etching grooves in the third areas 14 at two ends of the prepared ridge waveguide grating array, and preparing the electrode units 4 in a mode of doping silicon in the grooves. Etching the two sides of the waveguide grating to the surface of the first silicon dioxide layer 8, injecting and doping to prepare a doped silicon first electrode 401 and a doped silicon first electrode 401 which are parallel to the waveguide grating array, depositing silicon dioxide, etching through holes, and manufacturing leads for the doped silicon first electrode 401 and the doped silicon second electrode 402.
And S6, etching to remove the protective layer, preparing a cladding 302, and packaging by adopting glass or a transparent electrode.
Embodiment 4 of the present invention provides a preferable implementation manner, and in step S3, the specific steps of preparing the protective layer are as follows:
s301, growing silicon dioxide above the prepared waveguide array and the ridge waveguide grating array to prepare a second silicon dioxide layer 9;
s302, performing surface smoothing treatment on the second silicon dioxide layer 9, wherein the surface of the second silicon dioxide layer 9 left after the surface smoothing treatment and the silicon dioxide layer left above the ridge waveguide grating array are 100nm, depositing polysilicon of 100nm in a first area 10, and matching the size of the first area 10 with the size of the ridge waveguide grating array to finish the preparation of the protective layer.
Embodiment 4 of the present invention provides a preferred implementation manner, and in step S4, the specific steps of preparing the phase controller 2 array are as follows:
s401, growing 1.5 mu m of silicon dioxide above the prepared protective layer and above the second silicon dioxide layer 9 to prepare a third silicon dioxide layer 11;
s402, depositing 120nm titanium nitride in a second area 12 of the third silicon dioxide layer 11, and etching the titanium nitride to obtain a heating wire with a set pattern;
s403, growing 300nm of silicon dioxide above the prepared heating wire and above the third silicon dioxide layer 11 to prepare a fourth silicon dioxide layer 13;
s404, forming a hole in the third area 14 of the fourth silicon dioxide layer 13 and depositing a phase control electrode to prepare and finish the phase controller 2 array.
Embodiment 4 of the present invention provides a preferred implementation manner, and in step S6, the specific steps of preparing the cladding 302 are as follows:
a groove-shaped region is formed in the fourth region 15 above the waveguide grating array by etching using a window etching method, and liquid crystal is injected into the groove-shaped region.
The first silicon dioxide layer 8, the second silicon dioxide layer 9, the third silicon dioxide layer 11 and the fourth silicon dioxide layer 13 are etched deeply to expose the waveguide array and the ridge waveguide grating array, the protective layer is removed by etching, a groove-shaped region is formed in a fourth region 15 above the waveguide grating array by etching through a windowing etching method, liquid crystal is injected into the groove-shaped region to complete the preparation of the cladding 302, and glass is used for packaging. The optical phased array system prepared in example 4 of the present invention is shown in fig. 12.
Example 5:
the invention also provides a method for manufacturing the optical phased array system.
Fig. 7 is a flowchart showing a method of manufacturing an optical phased array system in embodiment 5 of the present invention. Embodiment 5 of the present invention provides a method for manufacturing an optical phased array system, as shown in fig. 7, including the following steps:
s1, as shown in fig. 8 and 9, growing 5 μm of silicon dioxide on the silicon substrate 7 to prepare a first silicon dioxide layer 8;
the first silica layer 8 is prepared to be used as a lower cladding layer 302 for subsequently preparing the coupler, the optical beam splitter 6, the waveguide array and the optical waveguide grating 301 array.
S2, depositing 340nm silicon nitride or silicon on the first silicon dioxide layer 8 by using a PECVD or LPCVD method, etching the silicon nitride or silicon after deposition, and preparing and finishing the coupler, the optical beam splitter 6, the waveguide array and the optical waveguide grating 301 array;
s3, preparing a protective layer in the first area 10 above the prepared optical waveguide grating 301 array;
s4, preparing 12 an array of phase controllers 2 in a second area above the prepared waveguide array;
s5, etching grooves in fourth areas 15 at two ends of the prepared optical waveguide grating 301 array, and preparing electrode units 4 in a mode of depositing metal or doping silicon in the grooves;
as shown in fig. 13, in embodiment 5 of the present invention, the fourth region 15 is etched to a depth reaching the surface of the silicon substrate 7, and the first electrode 401 located at the bottom is prepared by implantation doping.
And S6, etching to remove the protective layer, preparing a cladding 302, and packaging by adopting glass or a transparent electrode.
Embodiment 5 of the present invention provides a preferable implementation manner, and in step S3, the specific steps of preparing the protective layer are as follows:
s301, growing silicon dioxide above the prepared waveguide array and the optical waveguide grating 301 array to prepare and complete a second silicon dioxide layer 9;
s302, performing surface smoothing treatment on the second silicon dioxide layer 9, wherein the surface of the second silicon dioxide layer 9 left after the surface smoothing treatment and the silicon dioxide layer left above the optical waveguide grating 301 array are 100nm, depositing polysilicon of 100nm in a first area 10, and matching the size of the first area 10 with the size of the optical waveguide grating 301 array to finish the preparation of the protective layer.
The protection principle of the protective layer utilizes the selectivity of etching liquid, and polysilicon is not etched in the process of etching silicon dioxide in the subsequent preparation steps, so that the optical waveguide grating 301 array on the lower layer of the polysilicon is not damaged. And then, in the process of removing the protective layer, the polysilicon is etched, and the silicon dioxide is not etched in the process of removing the protective layer, so that only the protective layer is removed without damaging the optical waveguide grating 301 array. The method for preparing the protective layer can be used for protecting waveguide gratings made of various materials in the process of manufacturing the liquid crystal waveguide grating.
Embodiment 5 of the present invention provides a preferred implementation manner, and in step S4, the specific steps of preparing the phase controller 2 array are as follows:
s401, growing 1.5 mu m of silicon dioxide above the prepared protective layer and above the second silicon dioxide layer 9 to prepare a third silicon dioxide layer 11;
s402, depositing 120nm titanium nitride in a second area 12 of the third silicon dioxide layer 11, and etching the titanium nitride to obtain a heating wire with a set pattern;
s403, growing 300nm of silicon dioxide above the prepared heating wire and above the third silicon dioxide layer 11 to prepare a fourth silicon dioxide layer 13;
s404, forming a hole in the third area 14 of the fourth silicon dioxide layer 13 and depositing a phase control electrode to prepare and finish the phase controller 2 array.
In the phase controller 2 array prepared in embodiment 5 of the present invention, the second area 12 is set on the prepared optical waveguide 1, 120nm titanium nitride is deposited in the second area 12, a heating wire with a set pattern is obtained by etching the titanium nitride, and the optical waveguide 1 made of silicon nitride is heated by the titanium nitride heating wire, so that the refractive index of the optical waveguide 1 can be changed, the phase can be changed, and the phase controller 2 array is prepared.
Embodiment 5 of the present invention provides a preferred implementation manner, and in step S6, the specific steps of preparing the cladding 302 are as follows:
the first silicon dioxide layer 8, the second silicon dioxide layer 9, the third silicon dioxide layer 11 and the fourth silicon dioxide layer 13 are etched deeply to expose the waveguide array and the optical waveguide grating 301 array, the protective layer is removed by etching, a window etching method is used for etching in a fourth area 15 above the waveguide grating array, a groove-shaped area is formed in the fourth area 15 by etching, liquid crystal is injected into the groove-shaped area to finish the preparation of the cladding 302, an indium tin oxide transparent electrode is used for packaging, and the indium tin oxide transparent electrode is also used as the second electrode 402. The optical phased array system after fabrication is shown in fig. 13.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and should not be taken as limiting the invention. Variations, modifications, substitutions and alterations of the above-described embodiments may be made by those of ordinary skill in the art without departing from the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. An optical phased array system comprising: the phase controller array is characterized by also comprising an optical waveguide grating array, an electrode unit and a cladding; the light guide grating array is connected with the phase controller array, the electrode units are arranged at two ends of the light guide grating array, the light guide grating array is wrapped by the cladding, laser beams after light splitting are transmitted to the phase controller array through the light guide array, the light guide grating array enters the light guide grating array after phase modulation is carried out on the phase controller array, and the change of the refractive index of the cladding is controlled by controlling the voltage applied to the electrode units, so that the scattering angle of the light guide grating array is controlled, and the outgoing angle of the light beams output by the light guide grating array is controlled.
2. The optical phased array system of claim 1, wherein the cladding layer is a liquid crystal material, and wherein the optical waveguide grating array outputs beams having an exit beam angle of at least 7.5 ° when the cladding layer has a refractive index that varies from 1.5 to 1.7.
3. The optical phased array system according to claim 1, wherein the electrode unit is disposed in a parallel direction or a vertical direction of the optical waveguide grating array;
the electrode material of the electrode unit is one or two of a metal material, a transparent conductive material or doped silicon.
4. The optical phased array system of claim 1, wherein the waveguide type of the optical waveguide grating array is a waveguide having a smaller dimension than a single mode waveguide, a slot type waveguide, a silicon ridge type waveguide, a double layer waveguide.
5. The optical phased array system as claimed in claim 1, further comprising an optical coupler and an optical splitter, wherein the laser beam is coupled into the optical coupler and then transmitted to the optical splitter for splitting, and the split laser beam enters the optical waveguide array.
6. The optical phased array system as claimed in any one of claims 1 to 5, wherein the optical phased array system is integrated on a chip.
7. A method of making the optical phased array system of claim 6, comprising the steps of:
s1, growing silicon dioxide on the substrate to prepare and finish the first silicon dioxide layer;
s2, depositing silicon nitride or silicon on the first silicon dioxide layer by using a plasma enhanced chemical vapor deposition method or a low-pressure chemical vapor deposition method, and etching the silicon nitride or the silicon after deposition to prepare and complete the coupler, the optical beam splitter, the waveguide array and the optical waveguide grating array;
s3, preparing a protective layer in a first area above the prepared optical waveguide grating array;
s4, preparing the phase controller array in a second area above the prepared waveguide array;
s5, etching a groove in a fourth area at two ends of the prepared optical waveguide grating array, and completing the preparation of the electrode unit in a mode of depositing metal or doping silicon in the groove;
and S6, after the protective layer is removed by etching, preparing the cladding, and packaging by adopting glass or a transparent electrode.
8. The method for manufacturing an optical phased array system as claimed in claim 7, wherein in step S3, the steps of manufacturing the protective layer are as follows:
s301, growing silicon dioxide above the prepared waveguide array and the prepared optical waveguide grating array to complete preparation of a second silicon dioxide layer;
s302, after the second silicon dioxide layer is subjected to surface smoothing treatment, depositing polycrystalline silicon in the first area, wherein the size of the first area is matched with that of the optical waveguide grating array, and the preparation of the protective layer is completed.
9. The method for manufacturing an optical phased array system as claimed in claim 7, wherein in step S4, the specific steps for manufacturing the phase controller array are:
s401, growing silicon dioxide above the prepared protective layer and above the second silicon dioxide layer to finish the preparation of a third silicon dioxide layer;
s402, depositing titanium nitride in a second area of the third silicon dioxide layer to finish the preparation of the titanium nitride layer, and etching the titanium nitride layer to obtain a heating wire with a set pattern;
s403, growing silicon dioxide above the prepared heating wire and above the third silicon dioxide layer to complete preparation of a fourth silicon dioxide layer;
s404, forming a hole in the third area of the fourth silicon dioxide layer and depositing the phase control electrode to finish the preparation of the phase controller array.
10. The method for manufacturing an optical phased array system as claimed in claim 7, wherein in step S6, the cladding layer is prepared by the following steps:
and forming a groove-shaped region in the fourth region above the waveguide grating array by using an etching method, and injecting liquid crystal into the groove-shaped region.
CN202111356634.7A 2021-11-16 2021-11-16 Optical phased array system and preparation method thereof Pending CN113985679A (en)

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