CN113972811B - Infrared bias power supply module based on integrated plastic package - Google Patents
Infrared bias power supply module based on integrated plastic package Download PDFInfo
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- CN113972811B CN113972811B CN202010716919.6A CN202010716919A CN113972811B CN 113972811 B CN113972811 B CN 113972811B CN 202010716919 A CN202010716919 A CN 202010716919A CN 113972811 B CN113972811 B CN 113972811B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
The invention provides an integrated plastic package-based infrared bias power supply module, which is based on the circuit structure design of a plurality of bare chips and peripheral components, can output multiple paths of bias voltages and power supply voltages with different specifications at the same time, provides different current load capacities, and is suitable for various application scenes; based on real-time adjustment of serial digital input signals and modulation resistors, bias voltage and power supply voltage with adjustable sizes can be output, and the practicability and flexibility are further improved; in the multi-path power supply output unit, two four-path voltage regulator chips are low-noise chips, and noise reduction resistors are connected in series at the output ends, so that the noise level of the power supply is effectively reduced; in the multipath power supply output unit, the digital voltage and the analog voltage are isolated, so that the noise coefficient of the analog part is further reduced; the internal device is designed by adopting a bare chip, and is integrally packaged by plastic package, so that the size and the volume of the device are effectively reduced, the miniaturized design of the structure is facilitated, and the application and the carrying are convenient.
Description
Technical Field
The invention relates to the technical field of infrared imaging, in particular to an infrared bias power supply module based on integrated plastic packaging.
Background
The infrared thermal imaging system mainly comprises an infrared focal plane array and a signal processing system, wherein the infrared focal plane array is divided into a refrigeration type and a non-refrigeration type. According to the working principle of both infrared focal plane arrays, the required bias voltage needs to be provided from outside, and in order to achieve higher imaging accuracy, the bias voltage is required to have a lower noise level (below 5 μvrms at 1 Hz-10 kHz). In addition, signal processing systems typically include an A/D converter, a DSP or an FPGA. The A/D converter needs 5V analog power supply and 3.3V digital power supply, the DSP or the FPGA needs 3.3V and 1.8V digital power supply, and the requirement of the analog part on power supply noise is higher.
The bias voltage and the power supply voltage of the existing infrared thermal imaging system are realized in the following way: amplifying the fixed voltage by a certain multiple by using an independent operational amplifier and a feedback resistor to provide a fixed bias voltage; the multiple sets of power supply voltages of different magnitudes used by the signal processing system are provided directly from the outside or converted using multiple independent DC/DC power supplies or LDO power supplies. However, the above scheme still has the disadvantages: if the bias voltage is not adjustable, the feedback resistor needs to be re-welded, the process is complicated, the bonding pad is easy to damage, and a plurality of independent operational amplifiers occupy a large space; generally, multiple paths of power supply voltages with different magnitudes cannot be directly provided in a complete machine system, and if multiple DC/DC power supplies or LDO power supplies are used, larger space is occupied, larger noise exists, and the imaging effect is inevitably reduced.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an infrared bias power module with a completely new structure, which is used for solving the problems of non-adjustable bias voltage and large occupied space of a plurality of independent devices in the prior art.
To achieve the above and other related objects, the present invention provides an integrated plastic package-based infrared bias power module, comprising:
a power supply main control unit which receives the first power supply voltage and the turn-off control signal and outputs a second power supply voltage having a turn-off/turn-on function;
the two-way bias output unit receives the second power supply voltage and the time sequence control signal and outputs two-way bias voltages;
the multi-path power supply output unit receives the second power supply voltage and outputs multi-path third power supply voltages with different specifications;
the power supply master control unit, the two-way bias voltage output unit and the multi-way power supply output unit are packaged in the same plastic package cavity.
Optionally, the power supply master control unit, the two-way bias voltage output unit and the multi-way power supply output unit are respectively arranged on the base of the plastic package cavity; the power supply control unit is electrically connected with the multi-path power supply output unit.
Optionally, the material of the base includes BT organic substrate.
Optionally, the power supply master control unit includes a first low dropout linear voltage stabilizing chip, a first resistor and a second resistor, a turn-off control pin of the first low dropout linear voltage stabilizing chip is connected with the turn-off control signal, a voltage input pin of the first low dropout linear voltage stabilizing chip is connected with the first power supply voltage, a ground pin of the first low dropout linear voltage stabilizing chip is grounded, a heat dissipation pad pin of the first low dropout linear voltage stabilizing chip is grounded, a voltage output pin of the first low dropout linear voltage stabilizing chip is grounded after being serially connected with the first resistor and the second resistor in sequence, a current sampling pin of the first low dropout linear voltage stabilizing chip is connected with a common end of the first resistor and the second resistor, and the second power supply voltage is externally output through the common end of the first resistor and the second resistor.
Optionally, the power supply master control unit further includes a first capacitor and a second capacitor, which are arranged in parallel, one end of the first capacitor is connected with the voltage input pin of the first low dropout linear voltage stabilizing chip, and the other end of the first capacitor is grounded.
Optionally, the timing control signal includes a serial digital input signal, a serial digital clock signal and a chip selection signal, the dual-path bias output unit includes a dual-path D/a conversion chip and a third capacitor, a serial data input pin of the dual-path D/a conversion chip is connected to the serial digital input signal, a serial clock input pin of the dual-path D/a conversion chip is connected to the serial digital clock signal, a chip selection pin of the dual-path D/a conversion chip is connected to the chip selection signal, a ground pin of the dual-path D/a conversion chip is grounded, a voltage input pin of the dual-path D/a conversion chip is connected to the second power supply voltage, a reference voltage input pin of the dual-path D/a conversion chip is grounded after being connected to the third capacitor in series, a first voltage output pin of the dual-path D/a conversion chip outputs a first analog voltage, and a second voltage output pin of the dual-path D/a conversion chip outputs a second analog voltage.
Optionally, the dual-path bias output unit further includes a dual-path operational amplifier chip, a third resistor and a fourth resistor, a positive power supply pin of the dual-path operational amplifier chip is connected to the second power supply voltage, and a negative power supply pin of the dual-path operational amplifier chip is grounded; the first output pin of the double-path operational amplifier chip is grounded after passing through the third resistor and the fourth resistor which are sequentially connected in series, the first inverting input pin of the double-path operational amplifier chip is connected with the common end of the third resistor and the fourth resistor, the first non-inverting input pin of the double-path operational amplifier chip is connected with the first voltage output pin of the double-path D/A conversion chip, and the first output pin of the double-path operational amplifier chip outputs a first bias voltage; the second output pin of the two-way operational amplifier chip is connected with the second inverting input pin of the two-way operational amplifier chip, the second non-inverting input pin of the two-way operational amplifier chip is connected with the second voltage output pin of the two-way D/A conversion chip, and the second output pin of the two-way operational amplifier chip outputs a second bias voltage.
Optionally, the multi-path power output unit includes a second low dropout linear voltage stabilizing chip and a fourth capacitor, a voltage input pin of the second low dropout linear voltage stabilizing chip is connected to the second power voltage, an enabling pin of the second low dropout linear voltage stabilizing chip is grounded, a ground pin of the second low dropout linear voltage stabilizing chip is grounded, a voltage output pin of the second low dropout linear voltage stabilizing chip is connected to a current sampling pin of the second low dropout linear voltage stabilizing chip, and a voltage output pin of the second low dropout linear voltage stabilizing chip outputs a third power voltage of the first specification.
Optionally, the multi-path power output unit further includes a first four-path voltage regulator chip, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a fifth capacitor, a sixth capacitor, a seventh capacitor and an eighth capacitor, wherein a voltage input pin of the first four-path voltage regulator chip is connected to the second power supply voltage, a heat dissipation pad pin of the first four-path voltage regulator chip is grounded, a ground pin of the first four-path voltage regulator chip is grounded, an enable pin of the first four-path voltage regulator chip is connected to a first enable signal, a reference voltage input pin of the first four-path voltage regulator chip is connected to a first reference voltage, and a temperature drift adjustment pin of the first four-path voltage regulator chip is connected to a first temperature proportion adjustment signal; the first configuration pin of the first four-way voltage regulator chip is grounded after being connected with the fifth resistor in series, the first configuration pin of the first four-way voltage regulator chip is connected with the first voltage output pin of the first four-way voltage regulator chip after being connected with the fifth capacitor in series, and the first voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a second specification outwards after being connected with the sixth resistor in series; the second configuration pin of the first four-way voltage regulator chip is connected with the second voltage output pin of the first four-way voltage regulator chip after being connected with the sixth capacitor in series, the seventh resistor is connected with the sixth capacitor in parallel, and the second voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a third specification outwards after being connected with the eighth resistor in series; the third configuration pin of the first four-way voltage regulator chip is connected with the third voltage output pin of the first four-way voltage regulator chip after passing through the seventh capacitor connected in series, and the third voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a fourth specification outwards after passing through the ninth resistor connected in series; the fourth configuration pin of the first four-way voltage regulator chip is connected with the fourth voltage output pin of the first four-way voltage regulator chip after being connected with the eighth capacitor in series, and the fourth voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a fifth specification outwards after being connected with the tenth resistor in series.
Optionally, the multi-path power output unit further includes a ninth capacitor, a tenth capacitor, an eleventh capacitor, a twelfth capacitor, a thirteenth capacitor, a fourteenth capacitor, a fifteenth capacitor, and a sixteenth capacitor; one end of the ninth capacitor is grounded, the other end of the ninth capacitor is connected with one end of the sixth resistor outputting the third power supply voltage of the second specification, and the tenth capacitor is connected with the ninth capacitor in parallel; one end of the eleventh capacitor is grounded, the other end of the eleventh capacitor is connected with one end of the eighth resistor outputting the third power supply voltage of the third specification, and the twelfth capacitor is connected with the eleventh capacitor in parallel; one end of the thirteenth capacitor is grounded, the other end of the thirteenth capacitor is connected with one end of the ninth resistor outputting the third power supply voltage of the fourth specification, and the fourteenth capacitor is connected with the thirteenth capacitor in parallel; one end of the fifteenth capacitor is grounded, the other end of the fifteenth capacitor is connected with one end of the tenth resistor outputting the third power supply voltage of the fifth specification, and the sixteenth capacitor is connected with the fifteenth capacitor in parallel.
Optionally, the multi-path power output unit further includes a second four-path voltage regulator chip, a magnetic bead, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor and a seventeenth capacitor, wherein a voltage input pin of the second four-path voltage regulator chip is connected with the second power voltage after being connected with the magnetic bead in series, a heat dissipation pad pin of the second four-path voltage regulator chip is grounded, a ground pin of the second four-path voltage regulator chip is grounded, an enabling pin of the second four-path voltage regulator chip is connected with a second enabling signal, a reference voltage input pin of the second four-path voltage regulator chip is connected with a second reference voltage, and a temperature drift adjustment pin of the second four-path voltage regulator chip is connected with a second temperature proportion adjustment signal; the first configuration pin of the second four-way voltage regulator chip is connected with the first voltage output pin of the second four-way voltage regulator chip after being connected with the seventeenth capacitor in series, and the first voltage output pin of the second four-way voltage regulator chip outputs a third power supply voltage of a sixth specification outwards after being connected with the eleventh resistor in series; a second configuration pin of the second four-way voltage regulator chip is connected with the first modulation signal, and a second voltage output pin of the second four-way voltage regulator chip outputs a third power supply voltage of a seventh specification to the outside after being connected with the twelfth resistor in series; a third configuration pin of the second four-way voltage regulator chip is connected with a second modulation signal, and a third power supply voltage of an eighth specification is externally output after a third voltage output pin of the second four-way voltage regulator chip is connected with the thirteenth resistor in series; a fourth configuration pin of the second four-way voltage regulator chip is connected with a third modulation signal, and a fourth voltage output pin of the second four-way voltage regulator chip outputs a third power supply voltage of a ninth specification to the outside after being connected with the fourteenth resistor in series; the first modulation signal is an output signal of the second voltage output pin of the second four-way voltage regulator chip after modulation, the second modulation signal is an output signal of the third voltage output pin of the second four-way voltage regulator chip after modulation, and the third modulation signal is an output signal of the fourth voltage output pin of the second four-way voltage regulator chip after modulation.
Optionally, the multi-path power output unit further includes an eighteenth capacitor, a nineteenth capacitor, a twentieth capacitor, a twenty-first capacitor, a twenty-second capacitor, a twenty-third capacitor, a twenty-fourth capacitor, and a twenty-fifth capacitor; one end of the eighteenth capacitor is grounded, the other end of the eighteenth capacitor is connected with one end of the eleventh resistor outputting the third power supply voltage of the sixth specification, and the nineteenth capacitor is connected with the eighteenth capacitor in parallel; one end of the twentieth capacitor is grounded, the other end of the twentieth capacitor is connected with one end of the twelfth resistor outputting the third power supply voltage of the seventh specification, and the twenty-first capacitor is connected with the twentieth capacitor in parallel; one end of the twenty-second capacitor is grounded, the other end of the twenty-second capacitor is connected with one end of the thirteenth resistor outputting the eighth specification of third power supply voltage, and the twenty-third capacitor is connected with the twenty-second capacitor in parallel; one end of the twenty-fourth capacitor is grounded, the other end of the twenty-fourth capacitor is connected with one end of the fourteenth resistor outputting the ninth-specification third power supply voltage, and the twenty-fifth capacitor is connected with the twenty-fourth capacitor in parallel.
As described above, the infrared bias power module based on integrated plastic package in the invention has the following beneficial effects:
the two-way bias output unit receives the second power supply voltage and the time sequence control signal, outputs two paths of bias voltages, can realize the adjustment of the bias voltages based on the adjustment control of the time sequence control signal, can output bias voltages with different specifications, and expands the application range of the power supply module; the power supply main control unit, the two-way bias voltage output unit and the multi-way power supply output unit are packaged in the same plastic package cavity, and the size and the volume of the power supply module are effectively reduced based on the integrated package of the bare chip and the peripheral components, so that the power supply module is beneficial to the miniaturized design of the structure and is convenient to carry.
Drawings
Fig. 1 shows a schematic structural diagram of an integrated plastic package-based infrared bias power module provided by the invention.
Fig. 2 shows an outline structure diagram of the integrated plastic package-based infrared bias power module provided by the invention.
Fig. 3 is a circuit diagram of the power master control unit in fig. 1.
Fig. 4 is a circuit diagram of the dual bias output unit of fig. 1.
Fig. 5 is a circuit diagram of the multi-path power output unit in fig. 1.
Description of the reference numerals
V1-first power supply voltage, SHDN-turn-off control signal, V2-second power supply voltage, VBB 1-first bias voltage, VBB 2-second bias voltage, V31-third power supply voltage of first specification, V32-third power supply voltage of second specification, V33-third power supply voltage of third specification, V34-third power supply voltage of fourth specification, V35-third power supply voltage of fifth specification, V36-third power supply voltage of sixth specification, V37-seventh power supply voltage, V38-third power supply voltage of eighth specification, V39-third power supply voltage of ninth specification, U1-first low voltage difference linear voltage stabilizing chip, U2-double-path D/A conversion chip, U3-double-path operational amplifier chip, U4-second low dropout linear regulator chip, U5-first four-way voltage regulator chip, U6-second four-way voltage regulator chip, C1-first capacitor, C2-second capacitor, C3-third capacitor, C4-fourth capacitor, C5-fifth capacitor, C6-sixth capacitor, C7-seventh capacitor, C8-eighth capacitor, C9-ninth capacitor, C10-tenth capacitor, C11-eleventh capacitor, C12-twelfth capacitor, C13-thirteenth capacitor, C14-fourteenth capacitor, C15-fifteenth capacitor, C16-sixteenth capacitor, C17-seventeenth capacitor, C18-eighteenth capacitor, C19-nineteenth capacitor, C20-twentieth capacitor, C21-twenty-first capacitor, C22-twenty-second capacitor, C23-twenty-third capacitor, c24-twenty-fourth capacitor, C25-twenty-fifth capacitor, R1-first resistor, R2-second resistor, R3-third resistor, R4-fourth resistor, R5-fifth resistor, R6-sixth resistor, R7-seventh resistor, R8-eighth resistor, R9-ninth resistor, R10-tenth resistor, R11-eleventh resistor, R12-twelfth resistor, R13-thirteenth resistor, R14-fourteenth resistor, L1-bead, GND-ground, DATA-serial digital input signal, SCLK-serial digital clock signal, CS-chip select signal, EN 1-first enable signal, EN 2-second enable signal, vref 1-first reference voltage, vref 2-second reference voltage, PTATB 1-first temperature ratio adjustment signal, PTATB 2-second temperature ratio adjustment signal, VL_RD 1-a first modulation signal, VL_RD 2-a second modulation signal, VL_RD 3-a third modulation signal, 11-a turn-off control pin of a first low dropout linear voltage regulator chip U1, 12-a voltage input pin of the first low dropout linear voltage regulator chip U1, 13-a ground pin of the first low dropout linear voltage regulator chip U1, 14-a heat radiation pad pin of the first low dropout linear voltage regulator chip U1, 15-a voltage output pin of the first low dropout linear voltage regulator chip U1, 16-a current sampling pin of the first low dropout linear voltage regulator chip U1, a serial DATA input pin of a 21-two-way D/A converter chip U2, a serial clock input pin of a 22-two-way D/A converter chip U2, a chip selection pin of a 23-two-way D/A converter chip U2, the voltage regulator comprises a ground pin of a 24-two-way D/A conversion chip U2, a voltage input pin of the 25-two-way D/A conversion chip U2, a reference voltage input pin of the 26-two-way D/A conversion chip U2, a first voltage output pin of the 27-two-way D/A conversion chip U2, a second voltage output pin of the 28-two-way D/A conversion chip U2, a positive power supply pin of a 31-two-way operational amplifier chip U3, a negative power supply pin of the 32-two-way operational amplifier chip U3, a first output pin of the 33-two-way operational amplifier chip U3, a first inverting input pin of the 34-two-way operational amplifier chip U3, a first non-inverting input pin of the 35-two-way operational amplifier chip U3, a second inverting input pin of the 36-two-way operational amplifier chip U3, a second inverting input pin of the 37-two-way operational amplifier chip U3, a second non-inverting input pin of the 38-two-way operational amplifier chip U3, a voltage input pin of the 41-second low voltage regulator chip U4, a voltage input pin of the 42-second low voltage regulator chip U4, a voltage regulator pin of the 4-low voltage regulator circuit U4, a voltage regulator pad of the fourth voltage regulator circuit 4, a voltage regulator circuit of the fourth voltage regulator circuit 5, a voltage regulator circuit 5, and a voltage regulator circuit 5, 55-a reference voltage input pin of the first four-way voltage regulator chip U5, 56-a temperature drift adjustment pin of the first four-way voltage regulator chip U5, 57-a first configuration pin of the first four-way voltage regulator chip U5, 58-a first voltage output pin of the first four-way voltage regulator chip U5, 59-a second configuration pin of the first four-way voltage regulator chip U5, 510-a second voltage output pin of the first four-way voltage regulator chip U5, 511-a third configuration pin of the first four-way voltage regulator chip U5, 512-a third voltage output pin of the first four-way voltage regulator chip U5, 513-a fourth configuration pin of the first four-way voltage regulator chip U5, 514-a fourth voltage output pin of the first four-way voltage regulator chip U5, 61-a voltage input pin of the second four-way voltage regulator chip U6, 62-a heat dissipation pad pin of the second four-way voltage regulator chip U6, 63-a ground pin of the second four-way voltage regulator chip U6, 64-an enable pin of the second four-way voltage regulator chip U6, 65-a reference voltage input pin of the second four-way voltage regulator chip U6, 66-a temperature drift adjustment pin of the second four-way voltage regulator chip U6, 67-a first configuration pin of the second four-way voltage regulator chip U6, 68-a first voltage output pin of the second four-way voltage regulator chip U6, 69-a second configuration pin of the second four-way voltage regulator chip U6, 610-a second voltage output pin of the second four-way voltage regulator chip U6, 611-a third configuration pin of the second four-way voltage regulator chip U6, 612-third voltage output pin of second four-way voltage regulator chip U6, 613-fourth configuration pin of second four-way voltage regulator chip U6, 614-fourth voltage output pin of second four-way voltage regulator chip U6.
Detailed Description
As mentioned in the background section above: the bias voltage of the existing infrared thermal imaging system is not adjustable, if the bias voltage needs to be changed, the feedback resistor needs to be re-welded, the process is complicated, a bonding pad is easy to damage, and a plurality of independent operational amplifiers occupy a large space; the power supply voltages of the existing infrared thermal imaging system with multiple paths of different sizes cannot be directly provided by the whole system, and a plurality of DC/DC power supplies or LDO power supplies are generally adopted, so that larger space is occupied, larger noise exists, and the imaging effect is affected.
Based on the above, the invention provides an infrared bias power supply module with a brand new structure, which is suitable for an infrared thermal imaging system: on the basis of outputting multiple paths of adjustable bias voltage and power supply voltage through circuit structures of the chip and the peripheral components, the bare chip and the peripheral components are integrally packaged, so that the size and the volume of the structure are reduced.
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 5. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. The structures, proportions, sizes, etc. shown in the drawings attached hereto are for illustration purposes only and are not intended to limit the scope of the invention, which is defined by the claims, but rather by the claims.
As shown in fig. 1, the present invention provides an integrated plastic package-based infrared bias power module, which includes:
a power supply main control unit which receives the first power supply voltage V1 and the turn-off control signal SHDN and outputs a second power supply voltage V2 having a turn-off/on function;
The two-way bias output unit receives the second power supply voltage V2 and the time sequence control signal and outputs two paths of bias voltages, namely a first bias voltage VBB1 and a second bias voltage VBB2;
a multi-path power supply output unit for receiving the second power supply voltage V2 and outputting multi-path third power supply voltages V31-V39 with different specifications;
the power supply master control unit, the two-way bias voltage output unit and the multi-way power supply output unit are packaged in the same plastic package cavity.
In detail, as shown in fig. 1, the two-way bias output unit outputs two-way bias voltages VBB1 and VBB2 with adjustable magnitudes, and the multi-way power output unit outputs nine-way third power voltages V31, V32, V33, V34, V35, V36, V37, V38 and V39 with different specifications, wherein V37, V38 and V39 are the third power voltages with adjustable magnitudes. It will be understood that, not only as shown in fig. 1, the two-way bias output unit may output one, three or more bias voltages, and the multi-way power output unit may output seven, eight, ten or other third power voltages with different specifications, which is not limited herein.
Wherein, the power supply master control unit, the two-way bias voltage output unit and the multipath power supply output unit are packaged in the same plastic package cavity: the power supply main control unit, the two-way bias voltage output unit and the multi-way power supply output unit are respectively arranged on a base of the plastic package cavity, and the base can be made of BT organic substrates; the inside of the base is provided with a plurality of layers of wiring for electrically connecting the power supply main control unit with the two-way bias voltage output unit and electrically connecting the power supply main control unit with the multipath power supply output unit.
Alternatively, as shown in fig. 2, the package size of the infrared bias power module is 10mm×10mm×1.8mm, and the bottom thereof contains 48 leadless pins, and the size thereof is 0.6mm×0.4mm, for input and output of circuit signals. In addition, the PCB also comprises a metal heat sink with the size of 7.9mm multiplied by 7.9mm, and the heat sink and the PCB are welded together to play a role in heat dissipation when the PCB is used.
In detail, the power supply general control unit, the two-way bias voltage output unit and the multi-way power supply output unit are all designed based on the circuit structure of the bare chip and peripheral components, and are described one by one.
Optionally, as shown in fig. 3, the power supply master control unit includes a first low dropout linear voltage regulator chip U1, a first resistor R1 and a second resistor R2, where a turn-off control pin 11 of the first low dropout linear voltage regulator chip U1 is connected to a turn-off control signal SHDN, a voltage input pin 12 of the first low dropout linear voltage regulator chip U1 is connected to a first power supply voltage V1, a ground pin 13 of the first low dropout linear voltage regulator chip U1 is grounded GND, a heat dissipation pad pin 14 of the first low dropout linear voltage regulator chip U1 is grounded GND, a voltage output pin 15 of the first low dropout linear voltage regulator chip U1 is grounded GND after passing through the first resistor R1 and the second resistor R2 which are sequentially connected in series, and a current sampling pin 16 of the first low dropout linear voltage regulator chip U1 is connected to a common terminal of the first resistor R1 and the second resistor R2, and outputs the second power supply voltage V2 to the outside through the common terminal of the first resistor R1 and the second resistor R2.
Optionally, as shown in fig. 3, the power supply master control unit further includes a first capacitor C1 and a second capacitor C2 that are disposed in parallel, one end of the first capacitor C1 is connected to the voltage input pin 12 of the first low dropout linear voltage regulator chip U1, and the other end of the first capacitor C1 is grounded GND. The first capacitor C1 and the second capacitor C arranged in parallel are used for decoupling the first supply voltage V1.
In one embodiment of the present invention, the first low dropout linear voltage regulator chip U1 adopts LT1764 provided by tolter, the first resistor R1 takes a resistance of 710 Ω, the second resistor R2 takes a resistance of 200 Ω, the first capacitor C1 takes a capacitance of 0.1 μf, the second capacitor C2 takes a capacitance of 10 μf, the first power supply voltage V1 takes a voltage of 6V, and a second power supply voltage V2 of about 5.5V can be output, and the current load capacity of the first low dropout linear voltage regulator chip U1 is 3A.
Wherein, the shutdown control signal SHDN is active low: when the shutdown control signal SHDN is connected with a high level, the first low-dropout linear voltage stabilizing chip U1 is in a shutdown state, and outputs high resistance; when the shutdown control signal SHDN is at a low level, the first low dropout linear voltage regulator U1 is in an on state and normally outputs.
Optionally, as shown in fig. 4, the timing control signal includes a serial digital input signal DATA, a serial digital clock signal SCLK, and a chip selection signal CS, the two-way bias output unit includes a two-way D/a conversion chip U2 and a third capacitor C3, the serial DATA input pin 21 of the two-way D/a conversion chip U2 is connected to the serial digital input signal DATA, the serial clock input pin 22 of the two-way D/a conversion chip U2 is connected to the serial digital clock signal SCLK, the chip selection pin 23 of the two-way D/a conversion chip U2 is connected to the chip selection signal CS, the ground pin 24 of the two-way D/a conversion chip U2 is grounded GND, the voltage input pin 25 of the two-way D/a conversion chip U2 is connected to the second power supply voltage V2, the reference voltage input pin 26 of the two-way D/a conversion chip U2 is grounded after passing through the third capacitor C3 connected in series, the first voltage output pin 27 of the two-way D/a conversion chip U2 outputs the first analog voltage, and the second voltage output pin 28 of the two-way D/a conversion chip U2 outputs the second analog voltage.
In one embodiment of the present invention, the dual-path D/a conversion chip U2 employs TLV5638 of Texas Instruments (TI), which receives the second power voltage V2 of 5.5V, and the reference voltage thereof can be configured to be 1.024V or 2.048V by the serial digital input signal DATA, and the output voltage (the first analog voltage or the second analog voltage) thereof is up to twice the reference voltage, so that it can output the first analog voltage of 0 to 2.048V and the second analog voltage of 0 to 4.096V, and both the first analog voltage and the second analog voltage are adjustable voltages.
The serial digital input signal DATA is a programmable 16-bit serial code, and comprises a high 4-bit control bit and a low 12-bit DATA bit, which are used for setting two paths of output voltages; the frequency of the serial digital clock signal SCLK is less than or equal to 20MHz; the chip select signal CS is used to turn on/off the output of the two-way D/a conversion chip U2, and the low level is active.
Optionally, as shown in fig. 4, the dual-path bias output unit further includes a dual-path operational amplifier chip U3, a third resistor R3, and a fourth resistor R4, where a positive power supply pin 31 of the dual-path operational amplifier chip U3 is connected to the second power supply voltage V2, and a negative power supply pin 32 of the dual-path operational amplifier chip U3 is grounded GND; the first output pin 33 of the two-way operational amplifier chip U3 is grounded GND after passing through the third resistor R3 and the fourth resistor R4 which are sequentially connected in series, the first inverting input pin 34 of the two-way operational amplifier chip U3 is connected with the common end of the third resistor R3 and the fourth resistor R4, the first non-inverting input pin 35 of the two-way operational amplifier chip U3 is connected with the first voltage output pin 27 of the two-way D/A conversion chip U2, and the first output pin 33 of the two-way operational amplifier chip U3 outputs the first bias voltage VBB1; the second output pin 36 of the dual-path operational amplifier chip U3 is connected to the second inverting input pin 37 of the dual-path operational amplifier chip U3, the second non-inverting input pin 38 of the dual-path operational amplifier chip U3 is connected to the second voltage output pin 28 of the dual-path D/a conversion chip U2, and the second output pin 36 of the dual-path operational amplifier chip U3 outputs the second bias voltage VBB2.
In one embodiment of the present invention, the dual-path operational amplifier chip U3 employs an LM358 of Texas Instruments (TI) that receives a single power supply of a second power voltage V2 of 5.5V, receives both the first analog voltage and the second analog voltage, outputs two paths of bias voltages of 0 to 3.5V as a buffer for voltage signals, and has a current load capacity of 10mA: the third resistor R3 and the fourth resistor R4 are respectively 1k omega, and the first channel of the two-way operational amplifier chip U3 is configured to be amplified twice through the arrangement of the third resistor R3 and the fourth resistor R4, namely the first bias voltage VBB1 output by the first output pin 33 of the two-way operational amplifier chip U3 is 2 times of the first analog voltage; the second channel of the dual-path operational amplifier chip U3 is configured as a follower, i.e., the second bias voltage VBB2 output by the second output pin 36 of the dual-path operational amplifier chip U3 is a second analog voltage.
Optionally, as shown in fig. 5, the multi-path power output unit includes a second low dropout linear voltage regulator chip U4 and a fourth capacitor C4, a voltage input pin 41 of the second low dropout linear voltage regulator chip U4 is connected to the second power voltage V2, an enable pin 42 of the second low dropout linear voltage regulator chip U4 is grounded GND, a ground pin 43 of the second low dropout linear voltage regulator chip U4 is grounded GND, a voltage output pin 44 of the second low dropout linear voltage regulator chip U4 is connected to a current sampling pin 45 of the second low dropout linear voltage regulator chip U4, and a voltage output pin 44 of the second low dropout linear voltage regulator chip U4 outputs the third power voltage V31 of the first specification.
In one embodiment of the present invention, the second low dropout linear regulator chip U4 employs LT1086-3.3 provided by tolter, which receives the power supply of the second power voltage V2 of 5.5V, which has the enable pin 42 grounded GND (active low), and the voltage output pin 44 directly outputs the third power voltage V31 of the first specification of 3.3V, and which has the current load capability of 1A.
Optionally, as shown in fig. 5, the multi-path power output unit further includes a first four-path voltage regulator chip U5, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7, and an eighth capacitor C8, the voltage input pin 51 of the first four-path voltage regulator chip U5 is connected to the second power voltage V2, the heat dissipation pad pin 52 of the first four-path voltage regulator chip U5 is grounded GND, the ground pin 53 of the first four-path voltage regulator chip U5 is grounded GND, the enable pin 54 of the first four-path voltage regulator chip U5 is connected to the first enable signal EN1, the reference voltage input pin 55 of the first four-path voltage regulator chip U5 is connected to the first reference voltage Vref1, and the temperature drift adjustment pin 56 of the first four-path voltage regulator chip U5 is connected to the first temperature ratio adjustment signal PTATB1; the first configuration pin 57 of the first four-way voltage regulator chip U5 is connected with the ground GND through the serially connected fifth resistor R5, the first configuration pin 57 of the first four-way voltage regulator chip U5 is connected with the first voltage output pin 58 of the first four-way voltage regulator chip U5 through the serially connected fifth capacitor C5, and the first voltage output pin 58 of the first four-way voltage regulator chip U5 is connected with the third power supply voltage V32 of the second specification through the serially connected sixth resistor R6; the second configuration pin 59 of the first four-way voltage regulator chip U5 is connected to the second voltage output pin 510 of the first four-way voltage regulator chip U5 after passing through the serially connected sixth capacitor C6, the seventh resistor R7 is connected in parallel with the sixth capacitor C6, and the second voltage output pin 510 of the first four-way voltage regulator chip U5 outputs the third power voltage V33 of the third specification to the outside after passing through the serially connected eighth resistor R8; the third configuration pin 511 of the first four-way voltage regulator chip U5 is connected to the third voltage output pin 512 of the first four-way voltage regulator chip U5 after passing through the serially connected seventh capacitor C7, and the third voltage output pin 512 of the first four-way voltage regulator chip U5 outputs the third power supply voltage V34 of the fourth specification to the outside after passing through the serially connected ninth resistor R9; the fourth configuration pin 513 of the first four-way voltage regulator chip U5 is connected to the fourth voltage output pin 514 of the first four-way voltage regulator chip U5 after passing through the eighth capacitor C8 connected in series, and the fourth voltage output pin 514 of the first four-way voltage regulator chip U5 outputs the third power voltage V35 of the fifth specification to the outside after passing through the tenth resistor R10 connected in series.
Optionally, as shown in fig. 3, the multi-path power output unit further includes a ninth capacitor C9, a tenth capacitor C10, an eleventh capacitor C11, a twelfth capacitor C12, a thirteenth capacitor C13, a fourteenth capacitor C14, a fifteenth capacitor C15, and a sixteenth capacitor C16; one end of the ninth capacitor C9 is grounded GND, the other end of the ninth capacitor C9 is connected with one end of the sixth resistor R6 outputting a third power voltage V32 of a second specification, and the tenth capacitor C10 is connected in parallel with the ninth capacitor C9; one end of the eleventh capacitor C11 is grounded GND, the other end of the eleventh capacitor C11 is connected to one end of the eighth resistor R8 outputting the third power supply voltage V33 of the third specification, and the twelfth capacitor C12 is connected in parallel with the eleventh capacitor C11; one end of the thirteenth capacitor C13 is grounded GND, the other end of the thirteenth capacitor C13 is connected with one end of the ninth resistor R9 outputting a third power voltage V34 with a fourth specification, and the fourteenth capacitor C14 is connected with the thirteenth capacitor C13 in parallel; one end of the fifteenth capacitor C15 is grounded GND, the other end of the fifteenth capacitor C15 is connected to one end of the tenth resistor R10 outputting the third power supply voltage V35 of the fifth specification, and the sixteenth capacitor C16 is connected in parallel with the fifteenth capacitor C15.
In one embodiment of the present invention, the first four-way voltage regulator chip U5 employs an HMC1060 provided by adenno, which receives the power supply of the second power voltage V2 of 5.5V, and the first enable signal EN1 (active high) controls the on/off of the first four-way voltage regulator chip U5; the reference voltage input pin 55 is externally connected with a capacitor of 4.7 mu F and is used for decoupling the first reference voltage Vref 1; the fifth capacitor C5, the sixth capacitor C6, the seventh capacitor C7 and the eighth capacitor C8 respectively take 100nF capacitance values and are all modulation capacitors; the sixth resistor R6, the eighth resistor R8, the ninth resistor R9 and the tenth resistor R10 respectively take resistance values of 0.1 omega and are all used for reducing noise; the fifth resistor R5 takes a resistance value of 200kΩ, modulates and outputs a third power supply voltage V32 of a second specification of 3.6V on the first path of output, and the current load capacity is 100mA; the seventh resistor R7 takes a resistance value of 300kΩ, modulates and outputs a third power voltage V33 with a third specification of 3.0V on the second output, and the current load capacity is 50mA; a third power supply voltage V34 of a fourth specification of 3.3V is outputted on the third output by default, and the current load capacity is 50mA; a third power supply voltage V35 of a fifth specification of 5.0V is outputted on the fourth path output by default, and the current load capacity is 300mA; the ninth capacitor C9, the eleventh capacitor C11, the thirteenth capacitor C13, and the fifteenth capacitor C15 each have a capacitance of 10nF, and the tenth capacitor C10, the twelfth capacitor C12, the fourteenth capacitor C14, and the sixteenth capacitor C16 each have a capacitance of 0.1 μf, which are decoupling capacitors. The four power supply voltages V32, V33, V34 and V35 outputted from the first four-way voltage regulator chip U5 are all analog voltages of fixed values.
Optionally, as shown in fig. 5, the multi-path power output unit further includes a second four-path voltage regulator chip U6, a magnetic bead L1, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, and a seventeenth capacitor C17, wherein the voltage input pin 61 of the second four-path voltage regulator chip U6 is connected to the second power voltage V2 after passing through the magnetic bead L1 in series, the heat dissipation pad pin 62 of the second four-path voltage regulator chip U6 is grounded GND, the ground pin 63 of the second four-path voltage regulator chip U6 is grounded GND, the enable pin 64 of the second four-path voltage regulator chip U6 is connected to the second enable signal EN2, the reference voltage input pin 65 of the second four-path voltage regulator chip U6 is connected to the second reference voltage Vref2, and the temperature drift adjustment pin 66 of the second four-path voltage regulator chip U6 is connected to the second temperature ratio adjustment signal PTATB2; the first configuration pin 67 of the second four-way voltage regulator chip U6 is connected to the first voltage output pin 68 of the second four-way voltage regulator chip U6 after passing through the seventeenth capacitor C17 connected in series, and the first voltage output pin 68 of the second four-way voltage regulator chip U6 outputs the third power supply voltage V36 of the sixth specification to the outside after passing through the eleventh resistor R11 connected in series; the second configuration pin 69 of the second four-way voltage regulator chip U6 is connected to the first modulation signal vl_rd1, and the second voltage output pin 610 of the second four-way voltage regulator chip U6 outputs the third power voltage V37 of the seventh specification to the outside after passing through the serially connected twelfth resistor R12; the third configuration pin 611 of the second four-way voltage regulator chip U6 is connected to the second modulation signal vl_rd2, and the third voltage output pin 612 of the second four-way voltage regulator chip U6 is connected in series with the thirteenth resistor R13 to output the third power voltage V38 of the eighth specification; the fourth configuration pin 613 of the second four-way voltage regulator chip U6 is connected to the third modulation signal vl_rd3, and the fourth voltage output pin 614 of the second four-way voltage regulator chip U6 outputs the third power voltage V39 of the ninth specification to the outside after being connected in series with the fourteenth resistor R14; the first modulation signal vl_rd1 is an output signal of the second voltage output pin 610 of the second four-way voltage regulator chip U6 modulated by an external resistor and capacitor (not shown in the figure), the second modulation signal vl_rd2 is an output signal of the third voltage output pin 612 of the second four-way voltage regulator chip U6 modulated by an external resistor and capacitor (not shown in the figure), and the third modulation signal vl_rd3 is an output signal of the fourth voltage output pin 614 of the second four-way voltage regulator chip U6 modulated by an external resistor and capacitor (not shown in the figure).
Optionally, as shown in fig. 5, the multi-path power output unit further includes an eighteenth capacitor C18, a nineteenth capacitor C19, a twentieth capacitor C20, a twenty first capacitor C21, a twenty second capacitor C22, a twenty third capacitor C23, a twenty fourth capacitor C24, and a twenty fifth capacitor C25; one end of the eighteenth capacitor C18 is grounded GND, the other end of the eighteenth capacitor C18 is connected to one end of the eleventh resistor R11 outputting the third power supply voltage V36 of the sixth specification, and the nineteenth capacitor C19 is connected in parallel with the eighteenth capacitor C18; one end of the twentieth capacitor C20 is grounded GND, the other end of the twentieth capacitor C20 is connected with one end of the twelfth resistor R12 outputting a third power supply voltage V37 of a seventh specification, and the twenty-first capacitor C21 is connected with the twentieth capacitor C20 in parallel; one end of the twenty-second capacitor C22 is grounded GND, the other end of the twenty-second capacitor C22 is connected with one end of the thirteenth resistor R13 outputting a third power supply voltage V38 with eighth specification, and the twenty-third capacitor C23 is connected with the twenty-second capacitor C22 in parallel; one end of the twenty-fourth capacitor C24 is grounded GND, the other end of the twenty-fourth capacitor C24 is connected to one end of the fourteenth resistor R14 outputting the ninth-specification third power supply voltage V39, and the twenty-fifth capacitor C25 is connected in parallel with the twenty-fourth capacitor C24.
In one embodiment of the invention, the second four-way voltage regulator chip U6 employs an HMC1060 provided by Adenox, which is powered by a second supply voltage V2 of 5.5V through the magnetic bead L1 and isolated in this way from the other ground in the circuit, suitable for digital/analog isolation design in infrared systems; the second enable signal EN1 (active high) controls the on/off of the second four-way voltage regulator chip U6; the reference voltage input pin 65 is externally connected with a capacitor of 4.7 mu F and is used for decoupling the second reference voltage Vref 2; the seventeenth capacitor C17 takes a capacitance value of 100nF as a modulation capacitor; the eleventh resistor R11, the twelfth resistor R12, the thirteenth resistor R13 and the fourteenth resistor R14 respectively take resistance values of 0.1 omega and are all used for reducing noise; modulating and outputting a third power supply voltage V36 with a sixth specification of 3.6V on the first path of output, wherein the current load capacity is 100mA; a modulation network composed of a resistor and a capacitor is arranged between the second configuration pin 69 and the second voltage output pin 610, and a third power supply voltage V37 with a seventh specification of 1.8V-5.2V is modulated and output on the second path output, and the current load capacity is 50mA; a modulation network composed of a resistor and a capacitor is arranged between the third configuration pin 611 and the third voltage output pin 612, and a third power voltage V38 with an eighth specification of 1.8V-5.2V is modulated and output on a third path of output, and the current load capacity is 50mA; a modulation network composed of a resistor and a capacitor is arranged between the fourth configuration pin 613 and the fourth voltage output pin 614, and a ninth-specification third power supply voltage V39 of 1.8V-5.2V is modulated and output on the fourth path output, and the current load capacity is 300mA; the eighteenth capacitor C18, the twenty-first capacitor C21, the twenty-third capacitor C23, and the twenty-fifth capacitor C25 each have a capacitance of 10nF, and the nineteenth capacitor C19, the twenty-second capacitor C20, the twenty-second capacitor C22, and the twenty-fourth capacitor C24 each have a capacitance of 0.1 μff, which are decoupling capacitors. The four power supply voltages V36, V37, V38 and V39 output by the second four-way voltage regulator chip U6 are all digital voltages, and V37, V38 and V39 are all adjustable digital voltages.
In summary, the infrared bias power module provided by the invention can output multiple paths of bias voltages and power supply voltages with different specifications at the same time based on the circuit structure design of multiple bare chips and peripheral components, provides different current load capacities, and is suitable for multiple application scenes; based on real-time adjustment of serial digital input signals and modulation resistors, bias voltage and power supply voltage with adjustable sizes can be output, and the practicability and flexibility are further improved; in the multi-path power supply output unit, the first four-path voltage regulator chip and the second four-path voltage regulator chip adopt low-noise chips, and noise reduction resistors are connected in series at the output ends, so that the noise level of the power supply is effectively reduced; in the multi-path power supply output unit, the first four-path voltage regulator chip outputs analog voltage, the second four-path voltage regulator chip outputs digital voltage, the digital voltage and the analog voltage are isolated, the noise coefficient of an analog part is further reduced, the noise level is below 5 mu Vrms at 1-10 kHz, and the requirements of an infrared system on the noise coefficient are far met; the internal device is designed by adopting a bare chip, and is integrally packaged by plastic package, so that the size and the volume of the device are effectively reduced, the miniaturized design of the structure is facilitated, and the application and the carrying are convenient.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. An infrared bias power module based on integration plastic envelope, characterized by comprising:
a power supply main control unit which receives the first power supply voltage and the turn-off control signal and outputs a second power supply voltage having a turn-off/turn-on function;
the two-way bias output unit receives the second power supply voltage and the time sequence control signal and outputs two-way bias voltages;
the multi-path power supply output unit receives the second power supply voltage and outputs multi-path third power supply voltages with different specifications;
the power supply main control unit, the two-way bias voltage output unit and the multi-way power supply output unit are packaged in the same plastic package cavity;
the multi-path power supply output unit comprises a second low-voltage-difference linear voltage-stabilizing chip and a fourth capacitor, wherein a voltage input pin of the second low-voltage-difference linear voltage-stabilizing chip is connected with the second power supply voltage, an enabling pin of the second low-voltage-difference linear voltage-stabilizing chip is grounded, a ground pin of the second low-voltage-difference linear voltage-stabilizing chip is grounded, a voltage output pin of the second low-voltage-difference linear voltage-stabilizing chip is connected with a current sampling pin of the second low-voltage-difference linear voltage-stabilizing chip, and a voltage output pin of the second low-voltage-difference linear voltage-stabilizing chip outputs a third power supply voltage of a first specification;
The multi-path power supply output unit further comprises a second four-path voltage regulator chip, magnetic beads, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor and a seventeenth capacitor, wherein voltage input pins of the second four-path voltage regulator chip are connected with the second power supply voltage after being connected with the magnetic beads in series, heat dissipation pad pins of the second four-path voltage regulator chip are grounded, ground pins of the second four-path voltage regulator chip are grounded, enable pins of the second four-path voltage regulator chip are connected with a second enable signal, reference voltage input pins of the second four-path voltage regulator chip are connected with a second reference voltage, and temperature drift adjustment pins of the second four-path voltage regulator chip are connected with a second temperature proportion adjustment signal; the first configuration pin of the second four-way voltage regulator chip is connected with the first voltage output pin of the second four-way voltage regulator chip after being connected with the seventeenth capacitor in series, and the first voltage output pin of the second four-way voltage regulator chip outputs a third power supply voltage of a sixth specification outwards after being connected with the eleventh resistor in series; a second configuration pin of the second four-way voltage regulator chip is connected with the first modulation signal, and a second voltage output pin of the second four-way voltage regulator chip outputs a third power supply voltage of a seventh specification to the outside after being connected with the twelfth resistor in series; a third configuration pin of the second four-way voltage regulator chip is connected with a second modulation signal, and a third power supply voltage of an eighth specification is externally output after a third voltage output pin of the second four-way voltage regulator chip is connected with the thirteenth resistor in series; a fourth configuration pin of the second four-way voltage regulator chip is connected with a third modulation signal, and a fourth voltage output pin of the second four-way voltage regulator chip outputs a third power supply voltage of a ninth specification to the outside after being connected with the fourteenth resistor in series; the first modulation signal is an output signal of the second voltage output pin of the second four-way voltage regulator chip after modulation, the second modulation signal is an output signal of the third voltage output pin of the second four-way voltage regulator chip after modulation, and the third modulation signal is an output signal of the fourth voltage output pin of the second four-way voltage regulator chip after modulation.
2. The integrated plastic package-based infrared bias power supply module according to claim 1, wherein the power supply master control unit, the two-way bias output unit and the multi-way power supply output unit are respectively arranged on a base of the plastic package cavity; the power supply control unit is electrically connected with the multi-path power supply output unit.
3. The integrated plastic package-based infrared bias power module of claim 2, wherein the base comprises a BT organic substrate.
4. The integrated plastic package-based infrared bias power module according to claim 1 or 2, wherein the power master control unit comprises a first low-dropout linear voltage stabilizing chip, a first resistor and a second resistor, a turn-off control pin of the first low-dropout linear voltage stabilizing chip is connected with the turn-off control signal, a voltage input pin of the first low-dropout linear voltage stabilizing chip is connected with the first power supply voltage, a ground pin of the first low-dropout linear voltage stabilizing chip is grounded, a heat dissipation pad pin of the first low-dropout linear voltage stabilizing chip is grounded, a voltage output pin of the first low-dropout linear voltage stabilizing chip is grounded after being sequentially connected with the first resistor and the second resistor in series, a current sampling pin of the first low-dropout linear voltage stabilizing chip is connected with a common end of the first resistor and the second resistor, and the second power supply voltage is externally output through the common end of the first resistor and the second resistor.
5. The integrated plastic package based infrared bias power module according to claim 4, wherein the power master control unit further comprises a first capacitor and a second capacitor which are arranged in parallel, one end of the first capacitor is connected with a voltage input pin of the first low dropout linear voltage stabilizing chip, and the other end of the first capacitor is grounded.
6. The integrated plastic package-based infrared bias power module according to claim 1 or 2, wherein the timing control signal includes a serial digital input signal, a serial digital clock signal and a chip select signal, the two-way bias voltage output unit includes a two-way D/a conversion chip and a third capacitor, a serial data input pin of the two-way D/a conversion chip is connected to the serial digital input signal, a serial clock input pin of the two-way D/a conversion chip is connected to the serial digital clock signal, a chip select pin of the two-way D/a conversion chip is connected to the chip select signal, a ground pin of the two-way D/a conversion chip is grounded, a voltage input pin of the two-way D/a conversion chip is grounded after passing through the third capacitor in series, and a first voltage output pin of the two-way D/a conversion chip outputs a first analog voltage and a second voltage output pin of the two-way D/a conversion chip outputs a second analog voltage.
7. The integrated plastic package based infrared bias power module of claim 6, wherein the dual-path bias output unit further comprises a dual-path operational amplifier chip, a third resistor and a fourth resistor, a positive power supply pin of the dual-path operational amplifier chip is connected with the second power supply voltage, and a negative power supply pin of the dual-path operational amplifier chip is grounded; the first output pin of the double-path operational amplifier chip is grounded after passing through the third resistor and the fourth resistor which are sequentially connected in series, the first inverting input pin of the double-path operational amplifier chip is connected with the common end of the third resistor and the fourth resistor, the first non-inverting input pin of the double-path operational amplifier chip is connected with the first voltage output pin of the double-path D/A conversion chip, and the first output pin of the double-path operational amplifier chip outputs a first bias voltage; the second output pin of the two-way operational amplifier chip is connected with the second inverting input pin of the two-way operational amplifier chip, the second non-inverting input pin of the two-way operational amplifier chip is connected with the second voltage output pin of the two-way D/A conversion chip, and the second output pin of the two-way operational amplifier chip outputs a second bias voltage.
8. The integrated plastic package based infrared bias power module according to claim 7, wherein the multi-path power output unit further comprises a first four-path voltage regulator chip, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a fifth capacitor, a sixth capacitor, a seventh capacitor and an eighth capacitor, wherein a voltage input pin of the first four-path voltage regulator chip is connected to the second power supply voltage, a heat dissipation pad pin of the first four-path voltage regulator chip is grounded, a ground pin of the first four-path voltage regulator chip is grounded, an enable pin of the first four-path voltage regulator chip is connected to a first enable signal, a reference voltage input pin of the first four-path voltage regulator chip is connected to a first reference voltage, and a temperature drift adjustment pin of the first four-path voltage regulator chip is connected to a first temperature ratio adjustment signal; the first configuration pin of the first four-way voltage regulator chip is grounded after being connected with the fifth resistor in series, the first configuration pin of the first four-way voltage regulator chip is connected with the first voltage output pin of the first four-way voltage regulator chip after being connected with the fifth capacitor in series, and the first voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a second specification outwards after being connected with the sixth resistor in series; the second configuration pin of the first four-way voltage regulator chip is connected with the second voltage output pin of the first four-way voltage regulator chip after being connected with the sixth capacitor in series, the seventh resistor is connected with the sixth capacitor in parallel, and the second voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a third specification outwards after being connected with the eighth resistor in series; the third configuration pin of the first four-way voltage regulator chip is connected with the third voltage output pin of the first four-way voltage regulator chip after passing through the seventh capacitor connected in series, and the third voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a fourth specification outwards after passing through the ninth resistor connected in series; the fourth configuration pin of the first four-way voltage regulator chip is connected with the fourth voltage output pin of the first four-way voltage regulator chip after being connected with the eighth capacitor in series, and the fourth voltage output pin of the first four-way voltage regulator chip outputs a third power supply voltage of a fifth specification outwards after being connected with the tenth resistor in series.
9. The integrated plastic package based infrared bias power module of claim 8, wherein the multi-path power output unit further comprises a ninth capacitor, a tenth capacitor, an eleventh capacitor, a twelfth capacitor, a thirteenth capacitor, a fourteenth capacitor, a fifteenth capacitor, and a sixteenth capacitor; one end of the ninth capacitor is grounded, the other end of the ninth capacitor is connected with one end of the sixth resistor outputting the third power supply voltage of the second specification, and the tenth capacitor is connected with the ninth capacitor in parallel; one end of the eleventh capacitor is grounded, the other end of the eleventh capacitor is connected with one end of the eighth resistor outputting the third power supply voltage of the third specification, and the twelfth capacitor is connected with the eleventh capacitor in parallel; one end of the thirteenth capacitor is grounded, the other end of the thirteenth capacitor is connected with one end of the ninth resistor outputting the third power supply voltage of the fourth specification, and the fourteenth capacitor is connected with the thirteenth capacitor in parallel; one end of the fifteenth capacitor is grounded, the other end of the fifteenth capacitor is connected with one end of the tenth resistor outputting the third power supply voltage of the fifth specification, and the sixteenth capacitor is connected with the fifteenth capacitor in parallel.
10. The integrated plastic package based infrared bias power module of claim 9, wherein the multi-path power output unit further comprises an eighteenth capacitor, a nineteenth capacitor, a twentieth capacitor, a twenty first capacitor, a twenty second capacitor, a twenty third capacitor, a twenty fourth capacitor, and a twenty fifth capacitor; one end of the eighteenth capacitor is grounded, the other end of the eighteenth capacitor is connected with one end of the eleventh resistor outputting the third power supply voltage of the sixth specification, and the nineteenth capacitor is connected with the eighteenth capacitor in parallel; one end of the twentieth capacitor is grounded, the other end of the twentieth capacitor is connected with one end of the twelfth resistor outputting the third power supply voltage of the seventh specification, and the twenty-first capacitor is connected with the twentieth capacitor in parallel; one end of the twenty-second capacitor is grounded, the other end of the twenty-second capacitor is connected with one end of the thirteenth resistor outputting the eighth specification of third power supply voltage, and the twenty-third capacitor is connected with the twenty-second capacitor in parallel; one end of the twenty-fourth capacitor is grounded, the other end of the twenty-fourth capacitor is connected with one end of the fourteenth resistor outputting the ninth-specification third power supply voltage, and the twenty-fifth capacitor is connected with the twenty-fourth capacitor in parallel.
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| CN202010716919.6A Active CN113972811B (en) | 2020-07-23 | 2020-07-23 | Infrared bias power supply module based on integrated plastic package |
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| CN201336757Y (en) * | 2009-01-22 | 2009-10-28 | 陈咸丰 | Multi-way constant-current power supply used for high-power LED light source |
| CN204007658U (en) * | 2014-07-25 | 2014-12-10 | 福建省力得自动化设备有限公司 | Direct current transmission circuit with light-coupled isolation |
| CN106787679A (en) * | 2016-12-21 | 2017-05-31 | 中国航天时代电子公司 | A kind of infrared focal plane array electric power management circuit |
| CN108534926A (en) * | 2018-04-12 | 2018-09-14 | 太原理工大学 | For the pressure monitoring device inside road foundation |
| CN209881647U (en) * | 2019-05-20 | 2019-12-31 | 中船海洋探测技术研究院有限公司 | Multi-path adjustable power module |
| CN111082763A (en) * | 2019-12-16 | 2020-04-28 | 中国电子科技集团公司第十一研究所 | Driving circuit of infrared detector and infrared detector system |
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| CN201336757Y (en) * | 2009-01-22 | 2009-10-28 | 陈咸丰 | Multi-way constant-current power supply used for high-power LED light source |
| CN204007658U (en) * | 2014-07-25 | 2014-12-10 | 福建省力得自动化设备有限公司 | Direct current transmission circuit with light-coupled isolation |
| CN106787679A (en) * | 2016-12-21 | 2017-05-31 | 中国航天时代电子公司 | A kind of infrared focal plane array electric power management circuit |
| CN108534926A (en) * | 2018-04-12 | 2018-09-14 | 太原理工大学 | For the pressure monitoring device inside road foundation |
| CN209881647U (en) * | 2019-05-20 | 2019-12-31 | 中船海洋探测技术研究院有限公司 | Multi-path adjustable power module |
| CN111082763A (en) * | 2019-12-16 | 2020-04-28 | 中国电子科技集团公司第十一研究所 | Driving circuit of infrared detector and infrared detector system |
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| CN113972811A (en) | 2022-01-25 |
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