CN113972556A - Temperature regulating device of laser - Google Patents
Temperature regulating device of laser Download PDFInfo
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- CN113972556A CN113972556A CN202111130266.4A CN202111130266A CN113972556A CN 113972556 A CN113972556 A CN 113972556A CN 202111130266 A CN202111130266 A CN 202111130266A CN 113972556 A CN113972556 A CN 113972556A
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- 230000001105 regulatory effect Effects 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- 230000017525 heat dissipation Effects 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 13
- 230000001276 controlling effect Effects 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 4
- 229920006362 Teflon® Polymers 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 description 4
- 238000005057 refrigeration Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
Abstract
The invention relates to a temperature regulating device of a laser, which comprises a heating element, a heat dissipation substrate with adjustable heat conductivity, a thrust mechanism and a heat sink, wherein the heat dissipation substrate comprises a first heat conduction layer and a second heat conduction layer which can relatively displace. The heat conductivity of the heat dissipation substrate can be adjusted by changing the coincidence rate of the heat conduction columns in the heat conduction layer, so that the temperature of the heating element can be adjusted, and the heating element can be kept at the optimal working temperature all the time.
Description
Technical Field
The invention belongs to the field of heat dissipation of lasers, and particularly relates to a device capable of adjusting the temperature of a laser.
Background
Lasers generate a large amount of heat energy during operation, which causes the working medium of the laser to heat, thereby affecting the wavelength, output power, mode stability and lifetime of the laser. For example, in a semiconductor laser, the wavelength of the output light of the laser is affected by the PN junction temperature, and usually, the wavelength shifts from 0.3 to 0.5nm per degree celsius, which also causes the laser conversion efficiency to be greatly reduced, and the stability of the whole system to be poor. Therefore, the laser needs to have a heat sink with a prominent cooling performance to prevent thermal damage from occurring, thereby reducing the lifetime and even damage.
Lasers with different structural parameters and operating conditions have different optimal operating temperatures. In the prior art, the common temperature control methods are thermoelectric refrigeration and refrigerant refrigeration, and both methods belong to active refrigeration and temperature control, and have the defects of large amount of extra energy consumption and inconvenience.
Disclosure of Invention
In order to solve the problems, the invention provides a heat dissipation device capable of adjusting the temperature of a heating element in real time, which is simple, stable and reliable in structure and suitable for a high-power laser.
The invention provides a temperature regulating device of a heating element, which comprises the heating element, a heat dissipation substrate with adjustable heat conductivity, a thrust mechanism and a heat sink; the heat dissipation substrate is positioned between the heating element and the heat sink and comprises a first heat conduction layer and a second heat conduction layer which are mutually contacted; the first heat conducting layer and the second heat conducting layer respectively comprise a substrate and a plurality of heat conducting columns periodically distributed in the substrate, and the heat conducting columns penetrate through the substrate in the thickness direction of the substrate; the thermal conductivity of the material forming the substrate is less than the thermal conductivity of the material forming the heat-conducting column; the thrust mechanism is used for enabling the first heat conduction layer and the second heat conduction layer to generate relative displacement, so that the coincidence rate of the heat conduction columns in the first heat conduction layer and the second heat conduction layer is changed, the heat conductivity of the heat dissipation substrate is adjusted, and the temperature of the heating element is further adjusted.
Preferably, the heating element is a semiconductor laser, or a gain crystal in a solid state laser, or a fiber laser.
Preferably, the heat conduction performance of the heat dissipation substrate is enhanced as the coincidence ratio of the heat conduction columns of the first heat conduction layer and the second heat conduction layer increases.
Preferably, the plurality of heat conduction columns are distributed in the same density in each area of the substrate.
Preferably, the distribution density of the heat conductive pillars in the first and/or second heat conductive layer region corresponding to the portion where the temperature of the heat generating element is higher is greater than the distribution density of the heat conductive pillars in the first and/or second heat conductive layer region corresponding to the portion where the temperature of the heat generating element is lower.
Preferably, the heat conduction column in the first heat conduction layer region and/or the second heat conduction layer region corresponding to the portion where the temperature of the heating element is higher has a higher thermal conductivity than the heat conduction column in the first heat conduction layer region and/or the second heat conduction layer region corresponding to the portion where the temperature of the heating element is lower.
Preferably, the thrust mechanism is a linear motor, a screw mechanism, an electric cylinder or a hydraulic cylinder.
Preferably, the heat sink is a water cooled plate.
Preferably, the substrate is made of one of the group consisting of plastic, nylon and teflon; the heat-conducting column is made of one or more materials selected from the group consisting of pure metal, alloy and graphite.
The invention also provides a closed-loop feedback control system of the temperature adjusting device of the heating element, wherein the closed-loop feedback control system comprises a heat dissipation substrate, the heating element, a temperature sensor, a controller and a thrust mechanism; the temperature sensor is used for collecting the working temperature of the heating element, and the controller is used for controlling the thrust mechanism according to the preset temperature and the current working temperature; the thrust mechanism is used for controlling the coincidence rate of the heat conducting columns in the two heat conducting layers in the heat radiating substrate.
The invention has at least the following beneficial technical effects:
(1) the superposition rate of the heat-conducting columns is changed through the relative displacement between the two heat-conducting layers in the heat-radiating substrate, so that the heat-conducting performance of the heat-radiating substrate is adjusted, the temperature of the heating element is adjusted, the heating element can be always kept at the optimal working temperature, and the temperature adjusting mode is very convenient and fast;
(2) aiming at the heating element with uneven heat distribution, the heat conducting performance of each area of the radiating substrate can be different by changing the distribution mode of the heat conducting columns or the materials adopted by the heat conducting columns, so that the heat distribution of the heating element is more uniform;
(3) compared with an active refrigeration temperature control mode requiring a large amount of extra energy consumption, the temperature adjusting device provided by the invention belongs to a passive adjusting device, and is very energy-saving;
(4) the structure is simple, stable and reliable, and is suitable for high-power lasers.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a temperature regulating device for a heating element;
FIG. 2(a) is a three-dimensional schematic view of a single thermally conductive layer, and FIG. 2(b) is a top view of the single thermally conductive layer;
FIG. 3 is a diagram showing an analysis of the movement of the thermostat, wherein FIGS. 3(a) and 3(c) are front views of the thermostat before and after movement, respectively; FIGS. 3(b) and 3(d) are cross-sectional views of the thermostat before and after movement, respectively;
FIG. 4 is a schematic view of two thermal conductive layers partially overlapping;
FIG. 5 is a graph showing the temperature change of the heating element with the overlapping rate of the heat-conducting pillars changed;
FIG. 6 is a heat conductive pillar profile in another embodiment;
FIG. 7 is a schematic diagram of a closed loop feedback control system for the temperature of a heating element.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
As shown in fig. 1, embodiment 1 provides a temperature adjustment device of a heat generating element. The temperature adjusting device comprises a heating element 10, a heat dissipation substrate with adjustable heat conductivity, a thrust mechanism 30 and a heat sink 40. The heat dissipation substrate with adjustable thermal conductivity comprises a heat conduction layer 21 and a heat conduction layer 22, and is located between the heating element 10 and the heat sink 40. The pushing mechanism 30 is located on the heat sink 40.
The heating element 10 may be, but is not limited to, a semiconductor laser, a gain crystal in a solid laser, a fiber laser, and other devices requiring heat dissipation. The pushing mechanism 30 may be, but is not limited to, a linear motor, a lead screw mechanism, an electric cylinder or a hydraulic cylinder, or other mechanical device capable of reciprocating the heat conductive layer 22. The heat sink 40 may be, but is not limited to, a water cooled plate that is maintained at a relatively low and uniform temperature by water cooling.
The heat conducting layer 21 and the heat conducting layer 22 in the heat dissipation substrate have the same structure, and the heat conducting layer 21 is fixedly connected with the heating element. As shown in fig. 2(a) and 2(b), the thermally conductive layer includes a substrate 201 and thermally conductive pillars 202 periodically distributed in the substrate 201, the thermally conductive pillars 202 penetrating the substrate 201 in a thickness direction of the substrate 201. The substrate 201 is made of a material with a small thermal conductivity, such as plastic, nylon, teflon, etc. The heat-conducting column 202 is made of a material with high thermal conductivity, such as pure metal, alloy, and graphite. The cross-sectional shape of the heat conductive pillar 202 is not limited to the shape shown in fig. 2, and may be any shape such as a circle, a rectangular triangle, or the like.
As shown in fig. 3, the thermally conductive layer 21 and the thermally conductive layer 22 are disposed in face-to-face contact, and the thermally conductive layer 22 is displaceable relative to the thermally conductive layer 21 by the urging mechanism 30. When the heat conducting layer 22 is displaced relative to the heat conducting layer 21, the overlapping rate of the heat conducting pillars in the two heat conducting layers is changed, so that the heat conducting performance of the heat radiating substrate is changed, and the temperature of the heating element 10 is adjusted. As shown in fig. 3(b), when the thermally conductive layer 21 and the thermally conductive layer 22 are aligned, the thermally conductive columns in the two thermally conductive layers completely coincide, and the thermal conductivity of the heat dissipating substrate is maximized. As shown in fig. 3(d), when the thermally conductive layer 21 and the thermally conductive layer 22 are completely misaligned, the overlapping ratio of the thermally conductive columns in the two thermally conductive layers is 0%, and the thermal conductivity of the heat dissipating substrate is at a minimum.
Referring to fig. 4, the thickness of the single thermally conductive layer is denoted as l, the cross-sectional area is denoted as a, the total area ratio of the thermally conductive pillars in the thermally conductive layer is denoted as C, and the thermal conductivity of the thermally conductive pillars is denoted as khHeat conduction system of substrateNumber klThe coincidence rate of the heat-conducting columns in the two heat-conducting layers is recorded as s, and the comprehensive heat-conducting coefficient K of the heat-radiating substrate can be calculated by adopting the following formula under the condition of first-order approximation.
Temperature T of heating element 10HComprises the following steps:
where Q is the heating power of the heating element 10 and Tc is the temperature of the heat sink 40.
In embodiment 1, the heat-conducting pillar 202 is made of copper, and has a thermal conductivity of 385W/m/k, and the total area of the heat-conducting pillar in the heat-conducting layer is 70%; the substrate 201 is made of Teflon with a thermal conductivity of 0.25W/m/k and a total area percentage of 30%. The cross-sectional area of the thermally conductive layer was 0.01m2And the thickness is 1 cm. Fig. 5 is a temperature change curve of the heating element in the case of changing the overlapping rate of the heat conduction columns.
In the temperature control device provided in embodiment 1, the overlapping rate of the heat-conducting columns is reasonably set by an intelligent algorithm, so that the heating element can be always kept at the optimal working temperature.
In embodiment 1, the distribution of the heat conduction columns in the heat conduction layer 21 and the heat conduction layer 22 is the same, however, the distribution of the heat conduction layer 21 and the heat conduction layer 22 may be different as long as the heat conduction performance of the heat dissipation substrate can be changed when the heat conduction layer 21 and the heat conduction layer 22 generate relative displacement.
Example 2
In embodiment 2, when the temperature distribution of the heat generating element 10 in the temperature adjustment device provided in embodiment 1 is not uniform, the distribution manner of the heat conductive pillars in the heat conductive layer may be changed or the material of the heat conductive pillars may be changed according to the temperature distribution of the heat generating element.
In embodiment 2, the heating element 10 is a single-end pumped gain crystal, and the temperature distribution of the gain crystal is approximately decreased from the pumped end to the unpumped end. In this embodiment, a heat conductive layer of a distribution pattern shown in fig. 6(a) is used, in which the distribution density of the heat conductive pillars gradually decreases from the region a to the region C. Under the condition that the superposition rate of the heat conduction columns is the same, the heat conduction performance from the area A to the area C is gradually reduced. Region a is located corresponding to the pumping end of the gain crystal. The distribution shown in fig. 6(a) enables the temperature distribution of the single-end pumped gain crystal to be more uniform than a thermally conductive layer having uniform thermal conductivity in all regions.
In this embodiment 2, a thermal conductive layer may also be adopted in a distribution manner as shown in fig. 6(C), in which different high thermal conductivity materials are adopted for the thermal conductive columns in the regions a to C, and the thermal conductivity of the thermal conductive column materials in the regions a to C is sequentially reduced, for example, copper is adopted for the thermal conductive column material in the region a, aluminum is adopted for the thermal conductive column material in the region B, and graphite is adopted for the thermal conductive column material in the region C. Compared with a heat conducting layer with uniform heat conducting performance in all areas, the heat conducting layer can enable the temperature distribution of the single-end pumped gain crystal to be more uniform.
In this embodiment mode 2, it is also possible to use a thermally conductive layer in a distributed manner as shown in fig. 6(a) while using different high thermal conductivity materials as the thermally conductive pillars in the regions a to C. That is, the distribution density of the heat conductive columns in the heat conductive layer gradually decreases from area a to area C, and the heat conductivity of the heat conductive column material sequentially decreases from area a to area C.
In another embodiment 3, the heating element 10 is a double-end pumped gain crystal, and the temperature distribution of the gain crystal is approximately higher at the two pumping ends and lower in the middle region. In this embodiment, a heat conductive layer of a distribution pattern shown in fig. 6(B) is used, in which the distribution density of the heat conductive pillars in the region a and the region C is higher than that in the region B. In the case where the overlapping ratios of the heat conductive columns are the same, the heat conductive performance of the region a and the region C is stronger than that of the region B. The region a and the region C are disposed corresponding to the two pumping ends of the gain crystal, respectively. The distribution of the thermally conductive layer shown in fig. 6(b) enables the temperature distribution of the double-end pumped gain crystal to be more uniform than a thermally conductive layer having uniform thermal conductivity in all regions.
In this embodiment mode 3, a thermally conductive layer in which the thermal conductivity coefficient of the thermal conductive column material of the region a and the region C is higher than that of the region B may be used in a distributed manner as shown in fig. 6 (C). For example, copper is used for the heat-conducting columns in the area A and the area C, and aluminum is used for the area B. Compared with a heat conducting layer with uniform heat conducting performance in all areas, the heat conducting layer can enable the temperature distribution of the double-end pumped gain crystal to be more uniform.
In this embodiment 3, a thermal conductive layer may be used in a distributed manner as shown in fig. 6(B), and at the same time, the thermal conductivity of the thermal conductive column material in the region a and the region C is higher than that of the thermal conductive column material in the region B.
In embodiment 2, the distribution modes of the heat conduction pillars in the two heat conduction layers may be the same or different, and the materials used for the heat conduction pillars in the corresponding regions of the two heat conduction layers may be the same or different, as long as the heat dissipation performance of different regions of the heat dissipation substrate is different.
Example 3
Embodiment 3 provides a closed-loop feedback control system of the temperature of a heating element. As shown in fig. 7, the closed-loop feedback control system includes a heat-dissipating substrate, a heat-generating element, a temperature sensor, a controller, and a thrust mechanism. The temperature sensor is used for collecting the working temperature of the heating element, the controller is used for controlling the thrust mechanism according to the preset temperature and the current working temperature, and the thrust mechanism is used for controlling the coincidence rate of the heat conducting columns in the two heat conducting layers in the radiating substrate. When the current working temperature is higher than the preset temperature, the thrust mechanism increases the coincidence rate. Conversely, when the operating temperature is less than the preset temperature, the thrust mechanism decreases the overlap ratio. The controller reasonably sets the coincidence rate of the heat-conducting columns through an intelligent algorithm, so that the heating element can be always kept at a preset temperature.
Although illustrative embodiments of the present invention have been described above to facilitate the understanding of the present invention by those skilled in the art, it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art as long as they are within the spirit and scope of the present invention as defined and defined by the appended claims, and all matters of the invention which utilize the inventive concepts are protected.
Claims (10)
1. The temperature adjusting device for the heating element is characterized by comprising the heating element, a heat dissipation substrate with adjustable heat conductivity, a thrust mechanism and a heat sink; the heat dissipation substrate is positioned between the heating element and the heat sink, and comprises a first heat conduction layer and a second heat conduction layer which are mutually contacted; the first heat conducting layer and the second heat conducting layer respectively comprise a substrate and a plurality of heat conducting columns periodically distributed in the substrate, and the heat conducting columns penetrate through the substrate in the thickness direction of the substrate; the heat conductivity coefficient of the material forming the substrate is smaller than that of the material forming the heat conducting column; the thrust mechanism is used for enabling the first heat conduction layer and the second heat conduction layer to generate relative displacement, so that the coincidence rate of the heat conduction columns in the first heat conduction layer and the heat conduction columns in the second heat conduction layer is changed, the heat conductivity of the heat dissipation substrate is adjusted, and the temperature of the heating element is further adjusted.
2. The device as claimed in claim 1, wherein the heating element is a semiconductor laser, or a gain crystal in a solid laser, or a fiber laser.
3. The temperature control device for a heat generating element as claimed in claim 1 or 2, wherein the heat conducting property of the heat dissipating substrate is enhanced as the overlapping rate of the heat conducting pillars of the first heat conducting layer and the second heat conducting layer increases.
4. The apparatus of claim 1, wherein the plurality of heat-conducting pillars are distributed in the same density in each region of the substrate.
5. The temperature regulator of a heat generating element according to claim 1, wherein a distribution density of the heat conductive pillars in the first and/or second heat conductive layer region corresponding to a portion where a temperature of the heat generating element is higher is larger than a distribution density of the heat conductive pillars in the first and/or second heat conductive layer region corresponding to a portion where a temperature of the heat generating element is lower.
6. The temperature control apparatus for a heating element according to claim 4 or 5, wherein the heat conduction column in the first and/or second heat conduction layer region corresponding to the portion where the temperature of the heating element is high has a higher thermal conductivity than the heat conduction column in the first and/or second heat conduction layer region corresponding to the portion where the temperature of the heating element is low.
7. The apparatus according to claim 1, wherein the thrust mechanism is a linear motor, a lead screw mechanism, an electric cylinder, or a hydraulic cylinder.
8. A device for regulating the temperature of a heat-generating component as claimed in claim 1, wherein said heat sink is a water-cooled plate.
9. The apparatus as claimed in claim 1, wherein the substrate is made of one of the group consisting of plastic, nylon and teflon; the heat-conducting column is made of one or more materials selected from the group consisting of pure metal, alloy and graphite.
10. A closed loop feedback control system for a temperature regulating device of a heat generating element as claimed in claims 1 to 9, wherein said closed loop feedback control system comprises a heat dissipating substrate, a heat generating element, a temperature sensor, a controller and a thrust mechanism; the temperature sensor is used for acquiring the working temperature of the heating element, and the controller is used for controlling the thrust mechanism according to the preset temperature and the current working temperature; the thrust mechanism is used for controlling the coincidence rate of the heat conducting columns in the two heat conducting layers in the heat dissipation substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111130266.4A CN113972556A (en) | 2021-09-26 | 2021-09-26 | Temperature regulating device of laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111130266.4A CN113972556A (en) | 2021-09-26 | 2021-09-26 | Temperature regulating device of laser |
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| CN113972556A true CN113972556A (en) | 2022-01-25 |
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| CN202111130266.4A Pending CN113972556A (en) | 2021-09-26 | 2021-09-26 | Temperature regulating device of laser |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09199882A (en) * | 1996-01-22 | 1997-07-31 | Topcon Corp | Temperature control device |
| CN2781436Y (en) * | 2005-03-30 | 2006-05-17 | 吴砺 | Temp control structure |
| CN200990750Y (en) * | 2006-12-27 | 2007-12-12 | 华为技术有限公司 | A radiating structure and equipment including the same radiating structure |
| CN201118087Y (en) * | 2007-08-23 | 2008-09-17 | 福州高意通讯有限公司 | Micro-sheet type laser mounting structure |
| CN207409796U (en) * | 2017-11-24 | 2018-05-25 | 北京大族天成半导体技术有限公司 | Finely tune the structure of laser temperature |
| CN108207097A (en) * | 2018-02-09 | 2018-06-26 | 中兴通讯股份有限公司 | A kind of heat-proof device and electronic product |
| CN109786541A (en) * | 2019-03-15 | 2019-05-21 | 广东英维克技术有限公司 | Heat radiator |
| CN210692518U (en) * | 2019-11-30 | 2020-06-05 | 太仓轩旭精密电子有限公司 | Heat radiation structure of power amplifier device |
| CN213423781U (en) * | 2020-09-07 | 2021-06-11 | 昂纳信息技术（深圳）有限公司 | Heat dissipation adjusting device |
-
2021
- 2021-09-26 CN CN202111130266.4A patent/CN113972556A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09199882A (en) * | 1996-01-22 | 1997-07-31 | Topcon Corp | Temperature control device |
| CN2781436Y (en) * | 2005-03-30 | 2006-05-17 | 吴砺 | Temp control structure |
| CN200990750Y (en) * | 2006-12-27 | 2007-12-12 | 华为技术有限公司 | A radiating structure and equipment including the same radiating structure |
| CN201118087Y (en) * | 2007-08-23 | 2008-09-17 | 福州高意通讯有限公司 | Micro-sheet type laser mounting structure |
| CN207409796U (en) * | 2017-11-24 | 2018-05-25 | 北京大族天成半导体技术有限公司 | Finely tune the structure of laser temperature |
| CN108207097A (en) * | 2018-02-09 | 2018-06-26 | 中兴通讯股份有限公司 | A kind of heat-proof device and electronic product |
| CN109786541A (en) * | 2019-03-15 | 2019-05-21 | 广东英维克技术有限公司 | Heat radiator |
| CN210692518U (en) * | 2019-11-30 | 2020-06-05 | 太仓轩旭精密电子有限公司 | Heat radiation structure of power amplifier device |
| CN213423781U (en) * | 2020-09-07 | 2021-06-11 | 昂纳信息技术（深圳）有限公司 | Heat dissipation adjusting device |
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