CN113972345A - Quantum dot light-emitting diode and preparation method thereof - Google Patents
Quantum dot light-emitting diode and preparation method thereof Download PDFInfo
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- CN113972345A CN113972345A CN202010711460.0A CN202010711460A CN113972345A CN 113972345 A CN113972345 A CN 113972345A CN 202010711460 A CN202010711460 A CN 202010711460A CN 113972345 A CN113972345 A CN 113972345A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- H—ELECTRICITY
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- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention belongs to the technical field of display devices, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The preparation method of the quantum dot light-emitting diode comprises the following steps: providing a substrate; depositing a mixed solution containing a cross-linking agent and a hole functional material on the substrate, annealing, and then performing a cross-linking reaction under ultraviolet irradiation to obtain a hole functional layer; wherein the hole functional material is an organic material containing benzyl. In the quantum dot light-emitting diode prepared by the preparation method, the formed hole functional layer film has good stability and is not easily influenced by a solvent used for preparing a quantum dot light-emitting layer, so that a device has a smooth and complete film form, the light-emitting performance of the device can be improved, and the service life of the device can be prolonged.
Description
Technical Field
The invention belongs to the technical field of display devices, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof.
Background
Quantum dot materials with extremely high fluorescence quantum yield can be developed by using quantum confinement effect of Quantum Dots (QDs), and quantum dots with fluorescence quantum yield close to 100% can be prepared at present. In addition, the Full Width at Half Maximum (FWHM <30nm) of the quantum dot luminescence peak is very narrow, which indicates that the quantum dot can emit light with purer color spectrum and wider color gamut. Therefore, an electroluminescent device of a quantum dot light emitting diode (QLED) prepared based on the quantum dots has larger color gamut coverage rate, and the quantum dots have a unique core-shell structure, so that the electroluminescent device has better light, heat and water-oxygen stability than an OLED. The chemical composition and the particle size of the quantum dots are adjusted, so that the complete coverage of the visible light spectrum of the luminescent color of the quantum dots from ultraviolet to infrared bands is realized; by changing the types of the quantum dots, not only can colorful light-emitting devices be prepared, but also the accurate control of the light-emitting colors can be realized more easily. The surface ligand of the quantum dot can be regulated, so that the dispersion in different solvents such as organic solvents and aqueous solutions can be realized by changing the polarity of the surface ligand of the quantum dot, the application conditions of the quantum dot in different environments are greatly expanded by the regulated surface ligand, and the method for preparing the quantum dot film is enriched. Due to this property of quantum dots, all-solution fabrication methods, such as spin coating, spray coating, ink jet printing, etc., can be ideally used to fabricate QLEDs.
In the QLED device structure with multiple layers of thin films, the appearance quality of the thin films of adjacent layers has close correlation, and the film quality of each functional layer can seriously influence the injection and transmission of electrons and holes in the device, thereby influencing the probability of radiation recombination. In the process of film preparation, a smooth lower film is a prerequisite for preparing a flat upper film. In order to realize the preparation of the QLED device meeting the application requirements by the full-solution technology, firstly, the lower layer film is prevented from being dissolved and damaged by the upper layer solution when the upper layer film is prepared, so that the selection of the solvents of the adjacent films must meet the orthogonal principle, namely, the polarity of the solvents has a remarkable difference. However, some solvents between functional layers of devices cannot select proper orthogonal solvents, or some solvents of adjacent functional layers have obvious polarity difference, and a phenomenon that partial films are mixed can also occur, particularly between a hole transport layer and a quantum dot light emitting layer, aromatic hydrocarbon is used as a good solvent for quantum dots, and a quantum dot film prepared from the aromatic hydrocarbon is good, but the aromatic hydrocarbon is also a good solvent for a hole transport layer material, and can damage film formation of the hole transport layer, and meanwhile, the quantum dot light emitting layer can generate obvious aggregation and holes, so that the quantum dot film becomes rough, and adverse effects can also be generated on film formation quality of the electron transport layer.
Therefore, the prior art is in need of improvement.
Disclosure of Invention
The invention aims to provide a quantum dot light-emitting diode and a preparation method thereof, and aims to solve the technical problem that a hole functional layer film in the conventional quantum dot light-emitting diode is unstable.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a preparation method of a quantum dot light-emitting diode on one hand, which comprises the following steps:
providing a substrate;
depositing a mixed solution containing a cross-linking agent and a hole functional material on the substrate, annealing, and then performing a cross-linking reaction by ultraviolet irradiation to obtain a hole functional layer film;
wherein the hole functional material is an organic material containing benzyl.
The preparation method of the quantum dot light-emitting diode provided by the invention is characterized in that when the hole functional layer is prepared, a mixed solution containing a cross-linking agent and a hole functional material is deposited on a substrate for annealing treatment, and then the mixed solution is subjected to cross-linking reaction under ultraviolet irradiation to obtain the quantum dot light-emitting diode. In the ultraviolet irradiation process, a cross-linking agent reacts with benzyl hydrogen in a hole functional material to form stable free radicals, and the cross-linking reaction is carried out through free radical coupling, so that a hole functional layer film which is insoluble in a hydrocarbon organic solvent is formed.
On the other hand, the invention also provides a quantum dot light-emitting diode which comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein a hole functional layer is arranged between the anode and the quantum dot light-emitting layer, and the material of the hole functional layer comprises a cross-linking agent and a cross-linking product obtained by cross-linking an organic material containing benzyl.
In the quantum dot light-emitting diode provided by the invention, the hole functional layer comprises a cross-linking agent and a cross-linking product obtained by cross-linking the organic material containing benzyl, the cross-linking agent reacts with benzyl hydrogen in the hole functional material to form stable free radicals, and the cross-linking reaction is carried out through free radical coupling, so that the hole functional layer insoluble in hydrocarbon organic solvents is formed, and the quantum dot light-emitting diode has good stability, therefore, the device has a smooth and complete thin film form, good light-emitting performance and long service life.
Drawings
FIG. 1 is a flow chart of a method for fabricating a quantum dot light emitting diode according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a quantum dot light-emitting diode according to an embodiment of the present invention;
FIG. 3 is a graph showing electroluminescence spectra of example 1 of the present invention and comparative example 1;
FIG. 4 is a graph of current efficiency for devices of example 1 of the present invention and comparative example 1;
fig. 5 is a graph showing device lifetime tests of example 1 of the present invention and comparative example 1.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In one aspect, an embodiment of the present invention provides a method for manufacturing a quantum dot light emitting diode, as shown in fig. 1, the method includes the following steps:
s01: providing a substrate;
s02: depositing a mixed solution containing a cross-linking agent and a hole functional material on the substrate, annealing, and then performing a cross-linking reaction under ultraviolet irradiation to obtain a hole functional layer;
wherein the hole functional material is an organic material containing benzyl.
According to the preparation method of the quantum dot light-emitting diode provided by the embodiment of the invention, the mixed solution containing the cross-linking agent and the hole functional material is deposited on the substrate for annealing treatment, and then the ultraviolet light is irradiated for cross-linking reaction to obtain the hole functional layer. In the ultraviolet irradiation process, a cross-linking agent reacts with benzyl hydrogen in a hole functional material to form stable free radicals, and the cross-linking reaction is carried out through free radical coupling, so that a hole functional layer film which is insoluble in a hydrocarbon organic solvent is formed.
In one embodiment, the cross-linking agent is selected from at least one of benzophenone and a benzophenone derivative. In the embodiment of the invention, benzophenone and benzophenone derivatives are doped in a hole transport material according to a certain proportion, carbonyl groups of the benzophenone and benzophenone derivatives react with high-activity benzyl hydrogen on a hole functional layer material under the condition of ultraviolet illumination, stable free radicals can be formed after the reaction, the free radicals are coupled and cross-linked to form a hole functional layer film insoluble in a hydrocarbon organic solvent, and when a quantum dot light emitting layer film is prepared on the surface of the hole functional layer film, the hole functional layer can be prevented from being damaged by the hydrocarbon organic solvent, so that the smooth and complete film form is maintained. Further, the benzophenone derivative is at least one selected from the group consisting of 2, 4-dinitrobenzophenone, 2-hydroxy-4-methoxybenzophenone and 2-hydroxy-4-n-octoxybenzophenone.
In one embodiment, the benzyl-containing organic material is selected from the group consisting of poly (9-vinylcarbazole), poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4,4 ' - (N- (4-N-butyl) phenyl) -diphenylamine) ], poly [ (9, 9-di-N-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1, 4-diyl) ], poly (9, 9-dioctylfluorene-2, 7-diyl) -alt- (N, N ' -diphenylbenzidine-N, N ' -diyl), poly (9, 9-di-N-octylfluorenyl-2, 7-diyl), Poly [ (N, N '- (4-N-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine) -alt- (9, 9-di-N-octylfluorenyl-2, 7-diyl) ], poly [9- (1-octylnonyl) -9H-carbazole ], poly [ 2-methoxy-5- (2-ethylhexyloxy) -1, 4-phenylacetylene ], poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -co-benzothiophene ], and poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -alt- (benzo [2,1,3] thiadiazole-4, 8-diyl)). The hole functional material not only contains benzyl, can perform crosslinking reaction with benzophenone or benzophenone derivatives, but also has good hole transmission performance.
In one embodiment, a mixed solution containing the crosslinking agent and the hole-functional material is prepared by dissolving the above-described crosslinking agent and hole-functional material in a solvent. Wherein the concentration of the hole functional material in the mixed solution is 8-50mg/ml, and the hole functional material has better dispersion effect under the concentration; the mass ratio of the cross-linking agent to the hole functional material in the mixed solution is (0.5-10):100, if the proportion of the cross-linking agent is too low, the cross-linking of the hole functional material is insufficient, and the subsequent preparation of the quantum dot light-emitting layer can be damaged; when the proportion of the cross-linking agent is too high, because the benzophenone or the benzophenone derivative belongs to a non-conductive cross-linking agent, the excessive cross-linking agent is beneficial to cross-linking, but can reduce the injection and transmission capability of holes of a hole functional layer, thereby influencing the overall performance of the device. Therefore, the cross-linking agent and the hole functional layer material in the proportion range not only ensure good film morphology, but also are beneficial to improving the current efficiency and the service life performance of the device.
Further, the solvent in the mixed solution is selected from non-polar solvents such as hydrocarbon solvents. Specifically, the hydrocarbon solvent is at least one selected from saturated or unsaturated alkanes and saturated or unsaturated aromatic hydrocarbons. And depositing the mixed solution dispersed with the cross-linking agent and the hole functional material on a substrate, annealing to remove the solvent, and then performing cross-linking reaction under ultraviolet irradiation to obtain the hole functional layer film, wherein the stability of the hole functional material is not influenced in the annealing process.
In one embodiment, the manner of depositing the mixed solution containing the crosslinking agent and the hole function material on the substrate includes spin coating, doctor blading, printing, spray coating, and the like. The subsequent annealing process can be carried out in a water-free and oxygen-free environment.
In one embodiment, the temperature of the annealing treatment is 80-150 ℃; the temperature of the annealing treatment is 10-30 min; the film forming effect under the annealing condition is better. In one embodiment, the wavelength of the ultraviolet light is 200-410 nm; the ultraviolet irradiation time is 5-15min, and the crosslinking reaction effect is better under the ultraviolet irradiation condition.
Further, the substrate is an anode substrate, after the hole functional layer is obtained on the substrate, a quantum dot light-emitting layer is prepared on the surface of the hole functional layer, and a cathode is prepared on the quantum dot light-emitting layer.
The cross-linking agent and the organic material containing benzyl generate cross-linking reaction, the cross-linking agent and benzyl hydrogen react to form stable free radicals, and the cross-linking reaction is carried out through the coupling of the free radicals, so that the interface contact between the quantum dot light-emitting layer and the hole functional layer is stabilized, the non-radiative recombination generated by interface defects can be reduced, and the electro-optic efficiency and the service life of the quantum dot light-emitting diode are further improved.
In one embodiment, the quantum dot light-emitting layer is obtained by annealing a quantum dot solution containing a high molecular polymer to obtain a film, wherein the annealing temperature of the quantum dot solution is more than or equal to the glass transition temperature of the high molecular polymer. The quantum dot light-emitting layer is obtained by depositing a quantum dot solution containing a cross-linking agent on a substrate and carrying out annealing treatment, and the quantum dot light-emitting layer obtained by the preparation method can remarkably improve the electro-optic efficiency and the service life of a device because the annealing temperature of the quantum dot solution is not lower than the glass transition temperature of a high molecular polymer, specifically, when the annealing temperature is equal to the glass transition temperature of the high molecular polymer, the high molecular polymer is in a high elastic state, and when the annealing temperature is higher than the glass transition temperature of the high molecular polymer, the high molecular polymer is in a viscous state.
In one embodiment, the high molecular polymer is selected from at least one of a vinyl-based polymer, a acryl-based polymer, an amide-based polymer, a phenyl-based polymer, and a carbonate-based polymer. And (3) selecting a proper glass transition temperature (not more than the annealing temperature of the quantum dot solution) from the high molecular polymer, and mixing the glass transition temperature with the quantum dot material to prepare the quantum dot light-emitting layer.
Specifically, the vinyl polymer is selected from at least one of polyvinyl alcohol, polyvinyl carbazole, polyvinyl acetate, polytetrafluoroethylene, polyvinylidene fluoride and polyvinyl chloride; the acrylic polymer is selected from at least one of polyacrylic acid, polymethyl methacrylate, poly (alpha-nitrile butyl acrylate), polyacrylamide and polyacrylonitrile; the amide polymer is selected from at least one of poly (decylene formamide) and poly (ethylene sebacamide); the phenyl polymer is selected from at least one of polyphenylene sulfide and polyethylene terephthalate; the carbonate polymer is at least one selected from polycarbonate diol and brominated polycarbonate.
In one embodiment, the glass transition temperature of the high molecular polymer is 30-200 ℃; the annealing temperature of the quantum dot solution is 50-250 ℃, and the annealing temperature of the quantum dot solution is not lower than the glass transition temperature of the high molecular polymer. Further, preferably, the glass transition temperature range is selected to be 50-150 ℃, the annealing temperature of the quantum dot solution is 120-180 ℃, and the low glass transition temperature is selected so that low-temperature annealing can be performed, thereby having small influence on the thermal aging of the device. For example, the glass transition temperature of polymethyl methacrylate is 105 ℃ and the annealing temperature of the quantum dot solution can be selected to be 105 ℃. The glass transition temperature of the polytetrafluoroethylene is 130 ℃, so the annealing temperature of the quantum dot solution can be more than or equal to 130 ℃; the glass transition temperature of the polyacrylamide is 165 ℃, and the annealing temperature of the quantum dot solution is not less than 165 ℃.
In one embodiment, the quantum dot solution containing the high molecular polymer is prepared by dissolving the quantum dot and the high molecular polymer in a solvent. Wherein the concentration of the quantum dots in the quantum dot solution is 10-50mg/ml, and the quantum dot dispersion effect is better under the concentration; the mass ratio of the high molecular polymer to the quantum dots in the mixed solution is (0.5-10):100, under the condition of the mass ratio, the quantum dots can be better stacked and arranged into a regular quantum dot film.
Further, the hole function layer is a hole transport layer, and the hole function material is a hole transport material containing a benzyl group.
On the other hand, the embodiment of the invention also provides a quantum dot light-emitting diode, which comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein a hole functional layer is arranged between the anode and the quantum dot light-emitting layer, and the material of the hole functional layer comprises a cross-linking agent and a cross-linking product obtained by cross-linking an organic material containing benzyl.
In the quantum dot light-emitting diode provided by the embodiment of the invention, the hole functional layer comprises a cross-linking agent and a cross-linking product obtained by cross-linking the organic material containing benzyl, the cross-linking agent reacts with benzyl hydrogen in the hole functional material to form stable free radicals, and the cross-linking reaction is carried out through free radical coupling, so that the hole functional layer insoluble in hydrocarbon organic solvents is formed, and the quantum dot light-emitting diode has good stability, therefore, the device has a smooth and complete thin film form, good light-emitting performance and long service life.
Specifically, the quantum dot light-emitting diode is prepared by the preparation method provided by the embodiment of the invention, and a hole functional layer formed film has good stability, so that the device has a smooth and complete film form, and has good light-emitting performance and service life.
In the QLED preparation work, when the quantum dot light-emitting layer material solution is deposited on a hole function layer through the existing film forming process conditions of spin coating, blade coating, printing, spraying and the like, a hydrocarbon organic solvent is the best choice for preparing a better quantum dot film as a quantum dot good solvent, but aromatic hydrocarbon is also a good solvent of the hole function layer material, the film forming of the hole function layer can be damaged in the film forming process of the quantum dot light-emitting layer, and meanwhile, the quantum dot light-emitting layer can be caused to have obvious agglomeration and holes, so that the quantum dot film is rough, and the film forming quality of the next layer can be adversely affected. Defects on the thin film can increase the non-radiative recombination of excitons, and have great influence on the current efficiency and the service life of the QLED device. Therefore, in the embodiment of the invention, the hole functional layer material is doped with the cross-linking agent, after the hole functional layer film is prepared by ultraviolet irradiation, the free radical coupling cross-linking reaction is carried out in the ultraviolet irradiation mode, so that the hole functional layer film which is insoluble in the hydrocarbon organic solvent, such as the hole transport layer film, is formed, and when the quantum dot light emitting layer film is subsequently prepared, the hole transport layer can be prevented from being damaged by the hydrocarbon organic solvent, so that the smooth and complete film form of the device is maintained.
Specifically, the crosslinking agent is selected from at least one of benzophenone and benzophenone derivatives; the benzyl-containing organic material is selected from the group consisting of poly (9-vinylcarbazole), poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4,4 ' - (N- (4-N-butyl) phenyl) -diphenylamine) ], poly [ (9, 9-di-N-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1, 4-diyl) ], poly (9, 9-dioctylfluorene-2, 7-diyl) -alt- (N, N ' -diphenylbenzidine-N, N ' -diyl), poly (9, 9-di-N-octylfluorenyl-2, 7-diyl), poly [ (N, n '- (4-N-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine) -alt- (9, 9-di-N-octylfluorenyl-2, 7-diyl) ], poly [9- (1-octylnonyl) -9H-carbazole ], poly [ 2-methoxy-5- (2-ethylhexyloxy) -1, 4-phenylacetylene ], poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -co-benzothiophene ], and poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -alt- (benzo [2,1,3] thiadiazole-4, 8-diyl)); the mass ratio of the cross-linking agent to the organic material containing benzyl groups is (0.5-5): 100.
Furthermore, the material of the quantum dot light-emitting layer comprises quantum dots and a high molecular polymer, and the annealing temperature of the quantum dot light-emitting layer during annealing and film forming is more than or equal to the glass transition temperature of the high molecular polymer. Specifically, the mass ratio of the high molecular polymer to the quantum dot is (0.5-10):100, respectively; the high polymer is at least one selected from vinyl polymers, acrylic polymers, amide polymers, phenyl polymers and carbonate polymers.
In a preferred embodiment, the hole function layer is a film containing 5% of 2-hydroxy-4-methoxybenzophenone and poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4, 4' - (N- (4-N-butyl) phenyl) -diphenylamine) ], after the hole function layer is formed, a 365nm ultraviolet curing lamp is used for irradiating for 10min to perform a radical coupling crosslinking reaction to obtain a stable film layer, a quantum dot light emitting layer is formed on the hole function layer, a red quantum dot solution added with 3% of polyacrylic acid (mass fraction of quantum dots) is selected, 100 ℃ is selected as an annealing temperature, and quantum dot position rearrangement in the quantum dot light emitting layer is performed, so that the prepared device EQE is 18.9%, and T95@1000nit is 1294 h;
in an embodiment, in the above-mentioned quantum dot light emitting diode device, the hole function layer is a hole transport layer, and further, a hole injection layer is disposed between the hole transport layer and the anode. In another embodiment, in the above-mentioned quantum dot light emitting diode device, an electron function layer, such as an electron transport layer, or a stacked electron injection layer and an electron transport layer, is disposed between the quantum dot light emitting layer and the cathode, wherein the electron injection layer is adjacent to the cathode.
The quantum dot light-emitting diode provided by the embodiment of the invention comprises an upright structure and an inverted structure.
In one embodiment, the front-mounted quantum dot light emitting diode comprises a laminated structure of an anode and a cathode which are oppositely arranged, a quantum dot light emitting layer arranged between the anode and the cathode, a hole transport layer arranged between the anode and the quantum dot light emitting layer, and the anode is arranged on a substrate. Further, a hole function layer such as a hole injection layer and an electron blocking layer can be arranged between the anode and the quantum dot light-emitting layer; an electron-transport layer, an electron-injection layer, a hole-blocking layer and other electron-functional layers can be arranged between the cathode and the quantum dot light-emitting layer. In some embodiments of the front structure device, the quantum dot light emitting diode includes a substrate, an anode disposed on a surface of the substrate, a hole injection layer disposed on a surface of the anode, a hole transport layer disposed on a surface of the hole injection layer, a quantum dot light emitting layer disposed on a surface of the hole transport layer, an electron transport layer disposed on a surface of the quantum dot light emitting layer, and a cathode disposed on a surface of the electron transport layer.
In one embodiment, an inverted structure quantum dot light emitting diode includes a stacked structure of an anode and a cathode disposed opposite each other, a quantum dot light emitting layer disposed between the anode and the cathode, a hole transport layer disposed between the anode and the quantum dot light emitting layer, and the cathode disposed on a substrate. Further, a hole function layer such as a hole injection layer and an electron blocking layer can be arranged between the anode and the quantum dot light-emitting layer; an electron-transport layer, an electron-injection layer, a hole-blocking layer and other electron-functional layers can be arranged between the cathode and the quantum dot light-emitting layer. In some embodiments of the device with an inverted structure, the quantum dot light emitting diode includes a substrate, a cathode disposed on a surface of the substrate, an electron transport layer disposed on a surface of the cathode, a quantum dot light emitting layer disposed on a surface of the electron transport layer, a hole transport layer disposed on a surface of the quantum dot light emitting layer, a hole injection layer disposed on a surface of the hole transport layer, and an anode disposed on a surface of the hole injection layer.
The substrate comprises a rigid, flexible substrate, specifically comprising glass, a silicon wafer, polycarbonate, polymethylmethacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or a combination thereof.
The anode comprises a metal or alloy thereof such as nickel, platinum, vanadium, chromium, copper, zinc, or gold; a conductive metal oxide such as zinc oxide, indium oxide, tin oxide, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or fluorine-doped tin oxide; or a combination of metals and oxides such as ZnO and Al or SnO2And Sb, but is not limited thereto, and may be any two or a combination of two or more of the above.
The hole injection layer comprises a conductive compound including polythiophene, polyaniline, polypyrrole, poly (p-phenylene), polyfluorene, poly (3, 4-ethylenedioxythiophene) polysulfonylstyrene (PEDOT: PSS), MoO3、WoO3、NiO、HATCN、CuO、V2O5CuS, or a combination thereof.
The organic benzyl-containing material of the hole transport layer is selected from the group consisting of poly (9-vinylcarbazole), poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4,4 ' - (N- (4-N-butyl) phenyl) -diphenylamine) ], poly [ (9, 9-di-N-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1, 4-diyl) ], poly (9, 9-dioctylfluorene-2, 7-diyl) -alt- (N, N ' -diphenylbenzidine-N, N ' -diyl), poly (9, 9-di-N-octylfluorenyl-2, 7-diyl), Poly [ (N, N '- (4-N-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine) -alt- (9, 9-di-N-octylfluorenyl-2, 7-diyl) ], poly [9- (1-octylnonyl) -9H-carbazole ], poly [ 2-methoxy-5- (2-ethylhexyloxy) -1, 4-phenylacetylene ], poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -co-benzothiophene ], and poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -alt- (benzo [2,1,3] thiadiazole-4, 8-diyl)).
The quantum dots in the quantum dot light emitting layer are of group II-VI CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, HgZnSeS, HgSeTe, CdHgZnSgZnSeS, HgZnSeTe; or group III-V GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaGaAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InInInAlN, InLNAs, InAsInNSb, InAlGaAs, InLPSb; or group IV-VI SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; or a combination of any one or more of the above. The high molecular polymer in the quantum dot light-emitting layer is at least one selected from vinyl polymer, propylene polymer, amide polymer, phenyl polymer and carbonate polymer
Electronic deviceThe material of the transmission layer is ZnO or TiO2、Alq3、SnO2、ZrO、AlZnO、ZnSnO、BCP、TAZ、PBD、TPBI、Bphen、CsCO3One or more of (a).
The cathode comprises a metal or alloy thereof such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, lead, cesium, or barium; the multilayer structure material includes a structure of a first layer of an alkali metal halide, an alkaline earth metal halide, an alkali metal oxide, or a combination thereof, and a metal layer, wherein the metal layer includes an alkaline earth metal, a group 13 metal, or a combination thereof. For example LiF/Al, LiO2Al, LiF/Ca, Liq/Al, and BaF2and/Ca, but not limited thereto.
In a specific embodiment, the anode is selected from Indium Tin Oxide (ITO), and the hole injection layer is PEDOT: PSS, a hole transport layer is poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4, 4' - (N- (4-N-butyl) phenyl) -diphenylamine) ] and 2-hydroxy-4-methoxybenzophenone, a quantum dot light emitting layer is a red quantum dot material, an electron transport layer is ZnO, and a cathode is Ag.
In a specific embodiment, the thickness of the anode is 20 to 200 nm; the thickness of the hole injection layer is 20-200 nm; the thickness of the hole transport layer is 30-180 nm; the total thickness of the quantum dot mixed luminescent layer is 30-180 nm. The thickness of the electron transmission layer is 10-180 nm; the thickness of the cathode is 40-190 nm.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
The present embodiment provides a QLED device having a structure as shown in fig. 2, and the QLED device includes a substrate 1, an anode 2, a hole injection layer 3, a hole transport layer 4, a quantum dot light-emitting layer 5, an electron transport layer 6, and a cathode 7 in this order from bottom to top. The substrate 1 is made of a glass sheet, the anode 2 is made of an ITO (indium tin oxide) substrate, and the hole injection layer 3 is made of PEDOT: PSS, the hole transport layer 4 is made of 2-hydroxy-4-methoxybenzophenone and poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4, 4' - (N- (4-N-butyl) phenyl) -diphenylamine) ], the quantum dot light emitting layer 5 is made of CdZnSe/ZnSe/ZnS red quantum dots, the electron transport layer 6 is made of ZnO, and the cathode 7 is made of Al.
The preparation method of the device comprises the following steps:
and (3) coating a hole injection layer PEDOT on the anode ITO: PSS material, then annealing for 15min at 100 ℃; and then spin-coating a layer containing a metal oxide with a mass ratio of 5: annealing a mixed solution of 100 parts of 2-hydroxy-4-methoxybenzophenone and poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4, 4' - (N- (4-N-butyl) phenyl) -diphenylamine) ] at 100 ℃ for 15min, and irradiating the annealed solution under a 365nm ultraviolet lamp for 10min to obtain a hole transport layer; forming a quantum dot light emitting layer of CdZnSe/ZnSe/ZnS red quantum dots containing 3% of polyacrylic acid on the hole transport layer serving as the bearing part, and performing quantum dot position rearrangement by annealing at 100 ℃; spin-coating ZnO ethanol solution on the quantum dot light-emitting layer to obtain an electron transmission layer; and finally, forming the electroluminescent device by evaporating the Ag cathode electrode layer and packaging.
Example 2
The present embodiment provides a QLED device having a structure as shown in fig. 2, and the QLED device includes a substrate 1, an anode 2, a hole injection layer 3, a hole transport layer 4, a quantum dot light-emitting layer 5, an electron transport layer 6, and a cathode 7 in this order from bottom to top. The substrate 1 is made of a glass sheet, the anode 2 is made of an ITO (indium tin oxide) substrate, and the hole injection layer 3 is made of PEDOT: PSS, a hole transport layer 4 is made of 2-hydroxy-4-n-octyloxy benzophenone and poly (9-vinyl carbazole), a quantum dot light emitting layer 5 is made of CdZnSe/ZnSe/ZnS red quantum dots, an electron transport layer 6 is made of ZnO, and a cathode 7 is made of Al.
The preparation method of the device comprises the following steps:
and (3) coating a hole injection layer PEDOT on the anode ITO: PSS material, then annealing for 15min at 100 ℃; then, a mixed solution containing 2-hydroxy-4-n-octyloxy benzophenone and poly (9-vinyl carbazole) in a mass ratio of 4:100 is spin-coated on the hole injection layer, annealing is carried out at 100 ℃ for 15min, and the hole transport layer is obtained after irradiation is carried out for 10min under a 365nm ultraviolet lamp; forming a quantum dot light emitting layer of CdZnSe/ZnSe/ZnS red quantum dots on the hole transport layer as the bearing part; spin-coating ZnO ethanol solution on the quantum dot light-emitting layer to obtain an electron transmission layer; and finally, forming the electroluminescent device by evaporating the Ag cathode electrode layer and packaging.
Example 3
The present embodiment provides a QLED device having a structure as shown in fig. 2, and the QLED device includes a substrate 1, an anode 2, a hole injection layer 3, a hole transport layer 4, a quantum dot light-emitting layer 5, an electron transport layer 6, and a cathode 7 in this order from bottom to top. The substrate 1 is made of a glass sheet, the anode 2 is made of an ITO (indium tin oxide) substrate, and the hole injection layer 3 is made of PEDOT: PSS, the hole transport layer 4 is made of benzophenone and poly [ (9, 9-di-n-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1,4 diyl) ], the quantum dot light emitting layer 5 is made of CdZnSe/ZnSe/ZnS red quantum dots, the electron transport layer 6 is made of ZnO, and the cathode 7 is made of Al.
The preparation method of the device comprises the following steps:
and (3) coating a hole injection layer PEDOT on the anode ITO: PSS material, then annealing for 15min at 100 ℃; then, a mixed solution containing benzophenone and poly [ (9, 9-di-n-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1,4 diyl) ] in a mass ratio of 10:100 is spin-coated on the hole injection layer, annealing is carried out for 15min at the temperature of 100 ℃, and the hole transport layer is obtained by irradiating for 10min under a 365nm ultraviolet lamp; forming a quantum dot light emitting layer of CdZnSe/ZnSe/ZnS red quantum dots on the hole transport layer as the bearing part; spin-coating ZnO ethanol solution on the quantum dot light-emitting layer to obtain an electron transmission layer; and finally, forming the electroluminescent device by evaporating the Ag cathode electrode layer and packaging.
Comparative example 1
The quantum dot light emitting diode device of this comparative example was the same as example 1 except that the hole transport layer material was only poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4, 4' - (N- (4-N-butyl) phenyl) -diphenylamine) ].
Comparative example 2
The quantum dot light emitting diode device of this comparative example was the same as example 2 except that the hole transport layer material was poly (9-vinylcarbazole) only.
Comparative example 3
The quantum dot light emitting diode device of this comparative example was the same as example 3 except that the hole transport layer material was only poly [ (9, 9-di-n-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1,4 diyl) ].
Performance testing
The quantum dot light emitting diode devices of the above examples and comparative examples were tested for photoelectric properties and lifetime, and the test results are shown in table 1 and fig. 3 to 5.
The life test of the device adopts a 128-channel life test system customized by Guangzhou New View company. The system is constructed by driving a QLED by a constant voltage and constant current source and testing the change of voltage or current; a photodiode detector and test system to test the variation of brightness (photocurrent) of the QLED; the luminance meter test calibrates the luminance (photocurrent) of the QLED.
TABLE 1
| EL(nm) | FWHM(nm) | EQE(％) | CE(cd/A) | T95@1000nit(h) | |
| Example 1 | 623 | 22 | 16.3 | 24 | 1270 |
| Comparative example 1 | 623 | 22 | 6 | 9 | 248 |
| Example 2 | 623 | 22 | 17 | 25 | 1200 |
| Comparative example 2 | 623 | 22 | 5.5 | 8.1 | 198 |
| Example 3 | 623 | 22 | 15.5 | 21 | 1380 |
| Comparative example 3 | 623 | 22 | 4.5 | 6.6 | 109 |
The experimental data of embodiment 1 show that the hole functional layer thin film formed by using the crosslinkable hole transport material and rearranging the positions of quantum dots of the light emitting layer respectively have the current efficiency and the service life of the obtained quantum dot light emitting diode 2.7 times and 5 times that of the non-crosslinked hole transport layer, and the crosslinked hole transport layer can avoid being damaged by a quantum dot material solvent when the quantum dot light emitting layer is formed, so that the crosslinkable hole transport material is used, not only can the functional layer film be formed, but also the photoelectric performance of the light emitting diode device can be improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (12)
1. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
providing a substrate;
depositing a mixed solution containing a cross-linking agent and a hole functional material on the substrate, annealing, and then performing a cross-linking reaction under ultraviolet irradiation to obtain a hole functional layer;
wherein the hole functional material is an organic material containing benzyl.
2. The method of claim 1, wherein the cross-linking agent is at least one selected from the group consisting of benzophenone and benzophenone derivatives; and/or the presence of a gas in the gas,
the benzyl-containing organic material is selected from the group consisting of poly (9-vinylcarbazole), poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4,4 ' - (N- (4-N-butyl) phenyl) -diphenylamine) ], poly [ (9, 9-di-N-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1, 4-diyl) ], poly (9, 9-dioctylfluorene-2, 7-diyl) -alt- (N, N ' -diphenylbenzidine-N, N ' -diyl), poly (9, 9-di-N-octylfluorenyl-2, 7-diyl), poly [ (N, n '- (4-N-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine) -alt- (9, 9-di-N-octylfluorenyl-2, 7-diyl) ], poly [9- (1-octylnonyl) -9H-carbazole ], poly [ 2-methoxy-5- (2-ethylhexyloxy) -1, 4-phenylacetylene ], poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -co-benzothiophene ], and poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -alt- (benzo [2,1,3] thiadiazole-4, 8-diyl)).
3. The method of claim 1, wherein the concentration of the hole-functional material in the mixed solution is 8-50 mg/ml: and/or the presence of a gas in the gas,
in the mixed solution, the mass ratio of the cross-linking agent to the hole functional material is (0.5-10): 100; and/or the presence of a gas in the gas,
the temperature of the annealing treatment is 80-150 ℃; and/or the presence of a gas in the gas,
the temperature of the annealing treatment is 10-30 min; and/or the presence of a gas in the gas,
the wavelength of the ultraviolet light is 200-410 nm; and/or the presence of a gas in the gas,
the ultraviolet irradiation time is 5-15 min.
4. The method according to any one of claims 1 to 3, wherein the substrate is an anode substrate, and after the hole function layer is formed on the substrate, the method further comprises forming a quantum dot light-emitting layer on the surface of the hole function layer, and forming a cathode on the quantum dot light-emitting layer.
5. The method for preparing a quantum dot light-emitting diode according to claim 4, wherein the quantum dot light-emitting layer is obtained by annealing a quantum dot solution containing a high molecular polymer to form a film, and the annealing temperature of the quantum dot solution is not lower than the glass transition temperature of the high molecular polymer.
6. The method for preparing a quantum dot light-emitting diode according to claim 5, wherein the mass ratio of the high molecular polymer to the quantum dots in the quantum dot solution is (0.5-10):100, respectively; and/or the presence of a gas in the gas,
the glass transition temperature of the high molecular polymer is 50-150 ℃, and the annealing temperature of the quantum dot solution is 120-180 ℃; and/or the presence of a gas in the gas,
the high polymer is at least one selected from vinyl polymers, acrylic polymers, amide polymers, phenyl polymers and carbonate polymers.
7. The method of claim 6, wherein the vinyl-based polymer is at least one selected from the group consisting of polyvinyl alcohol, polyvinyl carbazole, polyvinyl acetate, polytetrafluoroethylene, polyvinylidene fluoride, and polyvinyl chloride; and/or the presence of a gas in the gas,
the acrylic polymer is selected from at least one of polyacrylic acid, polymethyl methacrylate, poly (alpha-nitrile butyl acrylate), polyacrylamide and polyacrylonitrile; and/or the presence of a gas in the gas,
the amide polymer is selected from at least one of poly (decylene formamide) and poly (ethylene sebacamide); and/or the presence of a gas in the gas,
the phenyl polymer is selected from at least one of polyphenylene sulfide and polyethylene terephthalate; and/or the presence of a gas in the gas,
the carbonate-based polymer is selected from at least one of polycarbonate diol and brominated polycarbonate.
8. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein a hole function layer is arranged between the anode and the quantum dot light-emitting layer.
9. The quantum dot light-emitting diode of claim 8, wherein the cross-linking agent is selected from at least one of benzophenone and benzophenone derivatives; and/or the presence of a gas in the gas,
the benzyl-containing organic material is selected from the group consisting of poly (9-vinylcarbazole), poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4,4 ' - (N- (4-N-butyl) phenyl) -diphenylamine) ], poly [ (9, 9-di-N-octylfluorenyl-2, 7-phenylethylene) -alt- (2-methoxy-5- (2-ethylhexyloxy) -1, 4-diyl) ], poly (9, 9-dioctylfluorene-2, 7-diyl) -alt- (N, N ' -diphenylbenzidine-N, N ' -diyl), poly (9, 9-di-N-octylfluorenyl-2, 7-diyl), poly [ (N, n '- (4-N-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine) -alt- (9, 9-di-N-octylfluorenyl-2, 7-diyl) ], poly [9- (1-octylnonyl) -9H-carbazole ], poly [ 2-methoxy-5- (2-ethylhexyloxy) -1, 4-phenylacetylene ], poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -co-benzothiophene ], and poly [ (9, 9-dioctylfluorenyl-2, 7-diyl) -alt- (benzo [2,1,3] thiadiazole-4, 8-diyl)); and/or the presence of a gas in the gas,
the mass ratio of the cross-linking agent to the organic material containing benzyl groups is (0.5-5): 100.
10. The quantum dot light-emitting diode of claim 8, wherein the material of the quantum dot light-emitting layer comprises quantum dots and a high molecular polymer, and the annealing temperature of the quantum dot light-emitting layer when the quantum dot light-emitting layer is annealed into a film is greater than or equal to the glass transition temperature of the high molecular polymer.
11. The quantum dot light-emitting diode of claim 10, wherein the mass ratio of the high molecular polymer to the quantum dot is (0.5-10):100, respectively; and/or the presence of a gas in the gas,
the high polymer is at least one selected from vinyl polymers, acrylic polymers, amide polymers, phenyl polymers and carbonate polymers.
12. The qd-led of claim 11, wherein the vinyl-based polymer is selected from at least one of polyvinyl alcohol, polyvinylcarbazole, polyvinyl acetate, polytetrafluoroethylene, polyvinylidene fluoride, and polyvinyl chloride; and/or the presence of a gas in the gas,
the acrylic polymer is selected from at least one of polyacrylic acid, polymethyl methacrylate, poly (alpha-nitrile butyl acrylate), polyacrylamide and polyacrylonitrile; and/or the presence of a gas in the gas,
the amide polymer is selected from at least one of poly (decylene formamide) and poly (ethylene sebacamide); and/or the presence of a gas in the gas,
the phenyl polymer is selected from at least one of polyphenylene sulfide and polyethylene terephthalate; and/or the presence of a gas in the gas,
the carbonate-based polymer is selected from at least one of polycarbonate diol and brominated polycarbonate.
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| WO2024104139A1 (en) * | 2022-11-18 | 2024-05-23 | Tcl科技集团股份有限公司 | Composite material, light-emitting device comprising same, and preparation method therefor |
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