CN113972135A - Etching method of Y-type deep groove and manufacturing method of deep groove isolation structure - Google Patents
Etching method of Y-type deep groove and manufacturing method of deep groove isolation structure Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000002955 isolation Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000001312 dry etching Methods 0.000 claims abstract description 13
- 230000007423 decrease Effects 0.000 claims description 9
- 230000003247 decreasing effect Effects 0.000 claims description 6
- 238000012986 modification Methods 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 74
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical class FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- YGYAWVDWMABLBF-UHFFFAOYSA-N Phosgene Chemical compound ClC(Cl)=O YGYAWVDWMABLBF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical class FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
Abstract
The invention provides an etching method of a Y-shaped deep groove, wherein the Y-shaped deep groove comprises a V-shaped top part and an I-shaped bottom part positioned below the V-shaped top part, and the method comprises the following steps: etching the V-shaped top on the substrate to be etched by gradually changing etching gas; and etching an I-shaped bottom by keeping an etching gas constant below the V-shaped top. The present invention etches a Y-shaped deep trench of a specific shape by two etching steps by simply controlling the flow rate of an etching gas, particularly an etching gas. The etching method of the Y-shaped deep groove provided by the invention is simple to implement, easy to control, free from excessive modification of the existing equipment and simple to convert between two etching steps. In addition, the invention also provides a manufacturing method of the deep trench isolation structure and a dry etching method for forming the inclined trench on the substrate.
Description
Technical Field
The present invention relates generally to the field of semiconductors, and more particularly, to a method for etching a Y-shaped deep trench, a method for fabricating a deep trench isolation structure, and a dry etching method for forming a sloped trench on a substrate.
Background
As the integration of internal components of integrated circuits continues to increase, the spacing between adjacent components increases due to the reduced distance, thereby increasing the likelihood of electrical interference between the components. In general, particularly for high voltage devices, in order to isolate the high voltage device in a low concentration deep well region or a low concentration epitaxial layer, a Deep Trench Isolation (DTI) process is required to achieve the required Isolation.
Conventional deep trenches are I-type. Fig. 1A shows the structure of a conventional I-type deep trench 2 formed on a substrate 1, the I-type deep trench 2 including sidewalls 3 perpendicular to the substrate surface, that is, the conventional I-type deep trench 2 is a substantially vertical trench formed perpendicular to the substrate surface. Such a conventional I-type deep trench may be formed by a dry etching method, and in particular, a vertical trench formed perpendicular to the surface of the substrate is etched by applying a constant etching gas to the surface of the substrate using a physical and/or chemical interaction of the etching gas with the substrate. Fig. 1B shows the conventional I-type deep trench 2 after subsequent filling with an insulating dielectric 4. As can be seen from the figure, in the subsequent process of filling the insulating medium 4, the conventional I-type deep trench 2 is prone to have premature closure of the filler, which results in insufficient top seal height after filling the insulating medium, and a void or a slit 5 exists in the formed deep trench structure, which will ultimately affect device performance.
It can be seen that in the DTI process, the shape of the deep trench directly determines the filling effect of the subsequent insulating medium. How to make the deep trench shape beneficial to filling is a difficult problem to be solved urgently by the DTI process.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a method for etching a Y-type deep trench, a method for fabricating a deep trench isolation structure, and a dry etching method for forming a sloped trench on a substrate.
A first aspect of the present invention provides a method for etching a Y-type deep trench including a V-shaped top and an I-shaped bottom below the V-shaped top, the method comprising: etching the V-shaped top on the substrate to be etched by gradually changing etching gas; and etching an I-shaped bottom by keeping the etching gas constant below the V-shaped top.
In one embodiment of the invention, ramping the etching gas comprises linearly decreasing the flow rate of the etching gas with time.
In one embodiment of the present invention, maintaining the etching gas constant includes maintaining a flow rate of the etching gas constant over time.
The second aspect of the present invention provides a method for manufacturing a deep trench isolation structure, which comprises the following steps: providing a substrate to be etched; etching a Y-shaped deep groove on the substrate to be etched; filling the Y-shaped deep groove with an insulating medium; and carrying out planarization treatment on the Y-type deep groove filled with the insulating medium to obtain a deep groove isolation structure. Wherein etching a Y-shaped deep trench in the substrate to be etched comprises gradually etching a V-shaped top of the Y-shaped deep trench with an etching gas; etching the I-shaped bottom of the Y-shaped deep trench by keeping the etching gas constant below the V-shaped top.
In one embodiment of the invention, ramping the etching gas comprises linearly decreasing the flow rate of the etching gas with time.
In one embodiment of the present invention, maintaining the etching gas constant includes maintaining a flow rate of the etching gas constant over time.
A third aspect of the present invention provides a dry etching method of forming a sloped trench on a substrate, comprising: the substrate is etched by a graded etching gas to form a sloped trench on the substrate.
In one embodiment of the present invention, the graded etching gas is an etching gas with a flow rate that varies linearly with time.
In one embodiment of the present invention, the graded etching gas is an etching gas whose flow rate decreases linearly with time.
By adopting the technical scheme, the invention at least has the following beneficial effects:
1. the present invention etches a Y-shaped deep trench of a specific shape by two etching steps by simply controlling the flow rate of an etching gas, particularly an etching gas. Compared with the traditional I-type deep groove, the V-shaped top of the Y-type deep groove is provided with the opening at the top of the deep groove, so that the subsequent filling of an insulating medium is facilitated, and the defect of insufficient top sealing height after the filling of the insulating medium can be effectively avoided; the I-shaped bottom of the Y-shaped deep groove can optimize electric field distribution and ensure that the deep groove has enough depth, so that the performance and the reliability of a device can be improved to a great extent. In addition, the etching method of the Y-shaped deep groove provided by the invention is simple to implement and easy to control, does not need to excessively modify the existing equipment, and only needs to adjust etching gas between two etching steps without other complex changes.
2. The deep trench isolation structure comprising the Y-shaped deep trench with the special shape is manufactured through simple steps, the method is simple and controllable, the implementation is easy, the top sealing height of the manufactured deep trench isolation structure is sufficient after the manufactured deep trench isolation structure is filled with insulating media, no or very small holes or thin slits are formed inside the deep trench isolation structure, and the performance and the reliability of devices are greatly improved.
3. The present invention can etch an inclined groove by simply controlling the flow rate of an etching gas, particularly, an etching gas. The method of the invention is simple and controllable, easy to implement and suitable for manufacturing grooves of other shapes including inclined side walls.
Drawings
In order to more clearly illustrate the technical solutions in the prior art and the embodiments of the present invention, the drawings needed in the prior art and the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for a person skilled in the art to obtain other drawings without creative efforts.
FIG. 1A illustrates the structure of a conventional I-type deep trench;
FIG. 1B shows the situation after filling a conventional I-type deep trench with an insulating dielectric;
FIG. 2A is a schematic diagram showing a structure formed after a first step of the Y-type deep trench etching method provided by the present invention is performed;
FIG. 2B is a schematic diagram showing the structure formed after the second step of the Y-type deep trench etching method provided by the present invention is performed; and
fig. 3 shows a schematic flow chart of a method for manufacturing a deep trench isolation structure provided by the invention.
Detailed Description
Embodiments of the present disclosure are described below. However, it is to be understood that the disclosed embodiments are merely examples and that other embodiments may take various and alternative forms. The figures are not necessarily to scale; certain features may be exaggerated or minimized to show details of particular components. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention. As one of ordinary skill in the art will appreciate, various features illustrated and described with reference to any one of the figures may be combined with features illustrated in one or more other figures to produce embodiments that are not explicitly illustrated or described. The combination of features shown provides a representative embodiment for a typical application. However, various combinations and modifications of the features consistent with the teachings of the present disclosure may be desirable for certain specific applications or implementations.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following embodiments of the present invention are described in further detail with reference to the accompanying drawings.
A first aspect of the present invention relates to a method for etching a Y-type deep trench including a V-shaped top and an I-shaped bottom below the V-shaped top, the method comprising: a first step of etching a V-shaped top 20 on a substrate 10 to be etched by gradually changing an etching gas, as shown in fig. 2A; second, the I-shaped bottom 30 is etched by keeping the etching gas constant below the V-shaped top 20, as shown in FIG. 2B.
In the above method of the present invention, the tapering the etching gas includes linearly decreasing the flow rate of the etching gas with time, that is, in the present invention, the V-shaped top including the inclined side wall is etched by gradually setting the flow rate of the etching gas from large to small. Specifically, the inclined side walls of the V-shaped top are gradually inclined inward from top to bottom, that is, the opening of the V-shaped top is gradually reduced from top to bottom. The larger the etching gas flow rate, the larger the lateral etching rate of the substrate; the smaller the etching gas flow rate, the smaller the lateral etching rate to the substrate, and thus the inclined sidewalls of the V-shaped top inclined with respect to the substrate surface are etched by the linear decrease in the etching gas flow rate with time. It should be understood that the size of the opening (i.e., the degree of inclination of the inclined sidewall) and the height of the V-shaped top portion can be adjusted according to actual needs by controlling the flow rate of the etching gas and the rate of decrease thereof with time, the time of decrease, and the like.
In the above method of the present invention, keeping the etching gas constant includes keeping the flow rate of the etching gas constant with time (i.e., keeping the flow rate of the etching gas constant with time), that is, in the present invention, by keeping the flow rate of the etching gas constant, an I-shaped bottom including vertical sidewalls is etched. Specifically, the vertical side walls of the I-shaped bottom are always perpendicular to the base surface, and the opening of the I-shaped bottom is constant from top to bottom. Since the flow rate of the etching gas is kept constant, the lateral etching rate of the substrate by the etching gas is also kept constant, thereby etching the vertical sidewalls of the I-shaped bottom that are perpendicular with respect to the substrate surface. It should be understood that the height of the I-shaped bottom can be adjusted according to actual needs by controlling the etching time.
In the above-described method of the present invention, the substrate 10 to be etched is a substrate known in the art, and the present invention is not particularly limited thereto. In some embodiments, the substrate to be etched 10 comprises a semiconductor chip. In some embodiments, the substrate 10 to be etched comprises a Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuit (IC), a micro-electromechanical system (MEMS), any other suitable electronic component, or a combination thereof. In some embodiments, the base 10 to be etched is a CMOS substrate. In some embodiments, the substrate to be etched 10 includes an epitaxial layer therein. In some embodiments, an electronic component is disposed over the epitaxial layer. In some embodiments, the substrate to be etched 10 includes a transfer layer on the substrate to be etched 10. In some embodiments, the transfer layer comprises an insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof. In some embodiments, the substrate 10 to be etched comprises an elemental semiconductor, including silicon or germanium in crystalline, polycrystalline, and/or amorphous structures; compound semiconductors including silicon carbide, gallium arsenide, gallium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor comprising SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; any other suitable material; and/or combinations thereof. In some embodiments, the base to be etched 10 is a bulk silicon substrate.
In the above method of the present invention, both etching steps are dry etching processes, preferably using the same etching gas, although it is possible to use different etching gases in specific cases. The etching gas may be a gas conventionally used in a dry etching process in the art, and the present invention is not particularly limited thereto. In some embodiments, the etching gas may include CxFyAnd (x is an integer of 2 to 5, y is 2, 4, 6, 8 or 10, and y ≦ 2 x). CxFyThe unsaturated perfluorocarbon represented may be selected from the group consisting of C2F2、C2F4、C3F4、C3F6、C4F2、C4F4、C4F6、C4F8、C5F4、C5F6、C5F8、C5F10Compounds of the group and mixtures of these. In some embodiments, C may also be included in the etching gaslHmFnSaturated fluorocarbon represented by (l is an integer of 1 to 5, m and n are positive integers, and m + n is 21 or 21+2), hydrocarbon gas, and hydrocarbon gasHalogen gas, reducing gas, and the like. ClHmFnThe saturated fluorocarbons represented may be: CHF3、CH2F2、CH3F、C2H2F4、C2HF5、C3HF7、C3H2F6、C3H3F5、C3H4F4、C3H5F3、C4HF9And the like. The hydrocarbon gas may be: CH (CH)4、C2H2、C2H4、C2H6、C3H4、C3H6、C3H8And the like. The halogen-containing gas may be: f2、Cl2、Br2、I2、YFn(Y-Cl, Br or I, n-an integer of 1 to 7), NF3HF, HCl, HBr, HI, etc. The reducing gas may be: h2、NH3NO, etc. In some embodiments, an oxidizing gas, such as O, may also be added to the etching gas2、O3、CO、CO2、COCl2、COF2、NO2And the like. In some embodiments, an inert gas, such as a noble gas group of argon, helium, neon, krypton, xenon, or nitrogen, may also be added to the etching gas. It should be understood that the above description of etching gases is for illustrative purposes only and that the inventive concept is not limited to the specific etching gases listed above.
From the above description, it can be seen that the invention etches a Y-shaped deep trench of a special shape by two etching steps by simply controlling the flow rate of the etching gas (especially the etching gas), wherein compared with the conventional I-shaped deep trench, the V-shaped top of the Y-shaped deep trench increases the top opening of the deep trench, which is beneficial to the subsequent filling of the insulating medium and can effectively avoid the insufficient top seal height after the filling of the insulating medium; the I-shaped bottom of the Y-shaped deep groove can optimize electric field distribution and ensure that the deep groove has enough depth, so that the performance and the reliability of a device can be improved to a great extent. In addition, the etching method of the Y-shaped deep groove provided by the invention is simple to implement and easy to control, does not need to excessively modify the existing equipment, and only needs to adjust the etching gas between two etching steps without other complicated and fussy changes.
A second aspect of the present invention relates to a method for manufacturing a deep trench isolation structure, as shown in fig. 3, the method 100 for manufacturing a deep trench isolation structure includes the following steps:
step 102: a substrate to be etched is provided. The material of the substrate to be etched is as described above and will not be described herein.
Step 104: and etching a Y-shaped deep groove on the substrate to be etched. Specific steps may include, but are not limited to: firstly, forming photoresist on a substrate to be etched; then, patterning the photoresist; then, dry etching the substrate to form a Y-type deep groove; after that, the photoresist is removed. Wherein dry etching the substrate to form the Y-shaped deep trench comprises gradually etching a V-shaped top of the Y-shaped deep trench with an etching gas; the I-shaped bottom of the Y-shaped deep trench is etched by keeping the etching gas constant below the V-shaped top. Wherein ramping the etching gas comprises linearly decreasing a flow rate of the etching gas over time. Wherein maintaining the etching gas constant comprises maintaining a constant flow rate of the etching gas over time. For further details, please refer to the above description of the method for etching the Y-type deep trench, which is not repeated herein.
Step 106: and filling the Y-shaped deep groove with an insulating medium.
Step 108: and carrying out planarization treatment on the Y-type deep groove filled with the insulating medium to obtain a deep groove isolation structure.
From the above description, it can be seen that the present invention produces a deep trench isolation structure including a specially shaped Y-shaped deep trench by a simple process. The method is simple and controllable and is easy to implement. The top sealing height of the manufactured deep trench isolation structure is sufficient after the insulation medium is filled, no or very small hole or slit is basically formed inside the deep trench isolation structure, and the performance and the reliability of the device are greatly improved.
A third aspect of the present invention is directed to a dry etching method of forming a slanted groove on a substrate, which includes etching the substrate by a graded etching gas to form the slanted groove on the substrate.
In the above method of the present invention, the gradually changed etching gas is an etching gas whose flow rate linearly changes with time. In one embodiment of the invention, the graded etching gas is an etching gas with a flow rate that decreases linearly with time, whereby sidewalls that are inclined with respect to the substrate surface are etched by the linear decrease in the flow rate of the etching gas. In other embodiments of the invention, the slots may be formed in any desired pattern by multiple stages of controlled gas changes, such as slots that taper first and then widen gradually, slots that taper first and then remain constant and then widen gradually, and so forth. It should be understood that the inclination and height of the inclined grooves may be adjusted according to actual needs by controlling the flow rate of the etching gas and the rate of decrease thereof with time, the time of decrease, and the like.
As can be seen from the above description, the present invention can etch an inclined groove by simply controlling the flow rate of the etching gas (particularly, the etching gas). The method of the invention is simple and controllable, easy to implement and suitable for manufacturing grooves of other complex shapes including inclined side walls.
The above-described embodiments are possible examples of implementations and are presented merely for a clear understanding of the principles of the invention. Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, of embodiments of the invention is limited to these examples; within the idea of an embodiment of the invention, also technical features in the above embodiment or in different embodiments may be combined and there are many other variations of the different aspects of an embodiment of the invention as described above, which are not provided in detail for the sake of brevity. Therefore, any omissions, modifications, substitutions, improvements, and the like that may be made without departing from the spirit and principles of the embodiments of the present invention are intended to be included within the scope of the embodiments of the present invention.
Claims (9)
1. A method for etching a Y-shaped deep trench, the Y-shaped deep trench comprising a V-shaped top portion and an I-shaped bottom portion below the V-shaped top portion, the method comprising:
etching the V-shaped top on the substrate to be etched by gradually changing etching gas; and
an I-shaped bottom is etched by keeping the etching gas constant below the V-shaped top.
2. The method of claim 1, wherein grading an etching gas comprises linearly decreasing a flow rate of the etching gas with time.
3. The method of claim 1, wherein maintaining a constant flow rate of the etching gas comprises maintaining a constant flow rate of the etching gas over time.
4. A manufacturing method of a deep trench isolation structure is characterized by comprising the following steps:
providing a substrate to be etched;
etching a Y-shaped deep groove on the substrate to be etched;
filling the Y-shaped deep groove with an insulating medium;
carrying out planarization treatment on the Y-shaped deep groove filled with the insulating medium to obtain a deep groove isolation structure,
wherein etching a Y-shaped deep trench in the substrate to be etched comprises gradually etching a V-shaped top of the Y-shaped deep trench with an etching gas; etching the I-shaped bottom of the Y-shaped deep trench by keeping the etching gas constant below the V-shaped top.
5. The method of claim 4, wherein grading the etching gas comprises linearly decreasing a flow rate of the etching gas over time.
6. The method of claim 4, wherein maintaining a constant flow rate of the etching gas comprises maintaining a constant flow rate of the etching gas over time.
7. A dry etching method for forming a sloped trench on a substrate, comprising: the substrate is etched by a graded etching gas to form a sloped trench on the substrate.
8. A dry etching method according to claim 7, wherein the etching gas is a gas whose flow rate varies linearly with time.
9. A dry etching method according to claim 8, wherein the etching gas is an etching gas whose flow rate decreases linearly with time.
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| US4417947A (en) * | 1982-07-16 | 1983-11-29 | Signetics Corporation | Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures |
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| JPH10125653A (en) * | 1996-10-17 | 1998-05-15 | Fujitsu Ltd | Manufacture of semiconductor device |
| TW382143B (en) * | 1997-06-23 | 2000-02-11 | Winbond Electronics Corp | Two-stage manufacturing method and structure for shallow trench isolation |
| TW452971B (en) * | 1999-12-28 | 2001-09-01 | Promos Technologies Inc | Manufacturing method of bottle-shaped deep trench |
| US20100159669A1 (en) * | 2008-12-24 | 2010-06-24 | Lee Won-Kwon | Method for forming deep trench in semiconductor device |
| US9842743B1 (en) * | 2016-11-30 | 2017-12-12 | Shanghai Huali Microelectronics Corporation | Method of etching a shallow trench |
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- 2020-07-24 CN CN202010723349.3A patent/CN113972135A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4417947A (en) * | 1982-07-16 | 1983-11-29 | Signetics Corporation | Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures |
| JPH02280323A (en) * | 1989-04-21 | 1990-11-16 | Fuji Electric Co Ltd | Plasma etching method |
| JPH10125653A (en) * | 1996-10-17 | 1998-05-15 | Fujitsu Ltd | Manufacture of semiconductor device |
| TW382143B (en) * | 1997-06-23 | 2000-02-11 | Winbond Electronics Corp | Two-stage manufacturing method and structure for shallow trench isolation |
| TW452971B (en) * | 1999-12-28 | 2001-09-01 | Promos Technologies Inc | Manufacturing method of bottle-shaped deep trench |
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Application publication date: 20220125 |