CN113970613B - Hydrogen sensor and preparation method thereof - Google Patents
Hydrogen sensor and preparation method thereof Download PDFInfo
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- CN113970613B CN113970613B CN202111082160.1A CN202111082160A CN113970613B CN 113970613 B CN113970613 B CN 113970613B CN 202111082160 A CN202111082160 A CN 202111082160A CN 113970613 B CN113970613 B CN 113970613B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
- G01N31/10—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using catalysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
- G01N31/12—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using combustion
Abstract
The application discloses hydrogen sensor and preparation method thereof, this hydrogen sensor includes: the sensor comprises a substrate, and a first film, a sensor assembly and a second film which are sequentially arranged along the direction far away from the substrate; the sensor assembly comprises a heating resistor, a temperature resistor and at least two thermistors, wherein the at least two thermistors are arranged adjacent to the heating resistor, and the temperature resistor is arranged far away from the heating resistor; be provided with the heat dissipation chamber on the basement, heating resistor and temperature resistance set up in the heat dissipation chamber within range, and the hydrogen sensor of this application preparation has that whole heat capacity is low, and the fast advantage of thermal response has promoted the security performance of vehicle when driving simultaneously.
Description
Technical Field
The application relates to the technical field of hydrogen sensors, in particular to a hydrogen sensor and a preparation method thereof.
Background
Hydrogen energy is of great interest because of its high fuel value, absence of polluting by-products, ease of transportation and storage, etc., and in particular, heavy duty transport vehicles using hydrogen as a power system are gradually replacing traditional diesel vehicles. However, hydrogen is also a flammable and explosive gas, and if leakage occurs, serious safety accidents may be caused, so that a hydrogen sensor for detecting hydrogen leakage is very important.
According to the different hydrogen concentration and environmental characteristics required to be detected at different positions on the hydrogen energy automobile, the characteristics of the hydrogen sensor required to be installed are different, for example, hydrogen leakage is required to be detected in a hydrogen storage steel cylinder and a cab, the detection concentration is lower than the lower limit of hydrogen explosion, but very quick response time is required; hydrogen concentration far above the lower explosive limit needs to be detected in the hydrogen fuel cell stack.
The traditional thermal conductivity type hydrogen sensor is manufactured according to the high thermal conductivity coefficient of hydrogen, and the structure of the traditional thermal conductivity type hydrogen sensor is a suspended bare resistance wire or magnetic bead which supplies power to the bare resistance wire or magnetic bead to heat the bare resistance wire or magnetic bead to work at a certain temperature, usually about 100-150 ℃, and hydrogen leaks to cause the temperature of the resistance wire to be reduced. Because non-noble metal resistance wires (such as nickel, tungsten alloy and the like) are easy to cause zero drift due to oxidation after long-term operation, and noble metals (such as platinum and the like) may cause false alarm of hydrogen catalytic reaction, a method is provided for manufacturing a coating on the surface of the resistance wire for protection, but the heat capacity is increased, the response time is obviously prolonged, and whether the safety of personnel is influenced by the time difference of 1 second when hydrogen leaks, so that a hydrogen sensor which really meets the requirements of a hydrogen energy vehicle does not exist at present.
Therefore, a technical solution of a hydrogen sensor is urgently needed to solve the problems of high heat capacity and long response time when detecting hydrogen leakage of the conventional hydrogen sensor.
Disclosure of Invention
In order to solve the problems in the prior art, the embodiment of the application provides a hydrogen sensor and a preparation method thereof, and the hydrogen sensor has the advantages of low overall heat capacity and fast thermal response, and meanwhile, the safety performance of a vehicle in driving is improved.
In one aspect, there is provided a hydrogen sensor comprising:
the sensor comprises a substrate and a first film, a sensor assembly and a second film which are sequentially arranged along the direction far away from the substrate;
the sensor assembly comprises a heating resistor, a temperature resistor and at least two thermistors, wherein the at least two thermistors are arranged adjacent to the heating resistor, and the temperature resistor is arranged far away from the heating resistor;
the substrate is provided with a heat dissipation cavity, and the heating resistor and the thermistor are arranged in the range of the heat dissipation cavity.
Further, the hydrogen sensor still includes the pad structure, the one end of pad structure respectively with heating resistor, temperature resistor and two at least thermistors, the other end of pad structure is connected with external control circuit, external control circuit is used for heating resistor, temperature resistor and two at least thermistors provide constant current source or constant voltage source.
Further, the second film covers the sensor assembly.
Further, the at least two thermistors include a first thermistor and a second thermistor, the first thermistor and the second thermistor are respectively arranged on two sides of the heating resistor, a first gas channel is formed between the first thermistor and the heating resistor, and a second gas channel is formed between the second thermistor and the heating resistor.
Further, the first thermistor and the second thermistor are symmetrically arranged on two sides of the heating resistor.
Further, the first thermistor is used for sensing first temperature information of the heating resistor; the second thermistor is used for sensing second temperature information of the heating resistor;
the first temperature information is different from the second temperature information when hydrogen gas passes through the first gas passage and the second gas passage.
Further, the first film is made of a silicon wafer through film deposition on the substrate.
Further, the material of the second film includes any one or more of silicon oxide, silicon nitride and aluminum oxide.
Furthermore, the thickness of the first film is 0.5-5um, and the thickness of the second film is 0.1-5 um.
In another aspect, there is provided a method of preparing the above hydrogen sensor, comprising the steps of:
providing a substrate, and cleaning the substrate;
performing film deposition on the substrate to form a first film with a preset depth on the substrate;
depositing a metal film on one side of the first film far away from the substrate to form a metal film with a preset depth; etching the metal film to form a heating resistor, at least two thermistors, a temperature resistor and a pad structure at a preset position;
performing film deposition on one side of the heating resistor, the at least two thermistors and the temperature resistor, which is far away from the first film, to form a second film with a preset depth;
and etching the substrate to form a heat dissipation cavity, wherein the heat dissipation cavity is arranged corresponding to the heating resistor and the at least two thermistors to obtain the hydrogen sensor.
The application has the following beneficial effects:
1. the hydrogen sensor of this application preparation has that whole heat capacity is low, the fast advantage of thermal response, has promoted the security performance of vehicle when driving simultaneously.
2. The hydrogen sensor of this application preparation is through keeping away from along first film and the second film of the micro-nano magnitude that sets gradually in the direction of basement to set up sensor assembly's structural design between first film and second film, make the thermal response speed of hydrogen sensor only tens of milliseconds, hydrogen detection speed is less than 0.5 second, compare traditional hydrogen sensor, response time reduces by a wide margin, the demand of reporting to the police in car rule level hydrogen sensor second level has been realized.
3. In the hydrogen sensor structure of this application preparation, thermistor symmetry sets up in heating resistor's both sides, confirms actual hydrogen concentration value according to the temperature difference at thermistor both ends and hydrogen thermal conductivity coefficient, can effectively prevent because of the concentration value output error that different hydrogen flow rates produced, avoids the false positive to under hydrogen energy automobile service environment, can acquire hydrogen concentration value fast, satisfy car rule level sensor alarm demand.
4. The hydrogen sensor prepared by the method is realized by adopting a silicon wafer manufacturing technology, so that the consistency of finished products is greatly improved, and the preparation cost is reduced.
5. The preparation method of the hydrogen sensor is simple to operate, low in cost and convenient for mass production.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a hydrogen sensor according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating a detection result between an output response time and a hydrogen concentration value of a hydrogen sensor according to an embodiment of the present disclosure;
fig. 3 is a top view of a hydrogen sensor provided in an embodiment of the present application;
FIG. 4 is a schematic diagram of the temperature field distribution of the hydrogen sensor surface at higher hydrogen flow rates provided by an embodiment of the present application;
fig. 5 is a schematic flow chart of a method for manufacturing a hydrogen sensor according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram of a hydrogen sensor preparation process provided in an embodiment of the present application;
wherein the reference numbers correspond to: 1-a substrate; 2-a first film; 3-heating a resistor; 401 — a first thermistor; 402-a second thermistor; 5-temperature resistance; 6-pad structure; 7-a second film; 8-heat dissipation cavity.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making creative efforts shall fall within the protection scope of the present application.
It should be noted that in the description created in this application, the terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus. Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention.
An embodiment of the present application provides a hydrogen sensor, please refer to fig. 1, which is a schematic structural diagram of the hydrogen sensor provided in the embodiment of the present application, and the schematic structural diagram includes: the sensor comprises a substrate (1) and a first film (2), a sensor assembly and a second film (7) which are sequentially arranged along the direction far away from the substrate; the sensor assembly comprises a heating resistor (3), a temperature resistor (5) and at least two thermistors, wherein the at least two thermistors are arranged adjacent to the heating resistor (3), and the temperature resistor (5) is arranged far away from the heating resistor (3); a heat dissipation cavity (8) is arranged on the substrate (1), and the heating resistor (3) and the thermistor are arranged in the range of the heat dissipation cavity (8).
In this application embodiment, basement (1) can be the silicon substrate, also can be other basement (1) materials, does not limit here, and first film (2) and second film (7) that set gradually along the direction of keeping away from basement (1) are micro-nano magnitude, and micro-nano magnitude's first film (2) and second film (7) structure can make the hydrogen sensor under minimum volume and consumption, realize higher sensitivity and response time.
The heating resistor (3) is used for providing a heat source for the hydrogen sensor, so that a hydrogen concentration value corresponding to the temperature change value is determined according to the temperature change value of the heating resistor (3), the thermistor (4) is used for detecting the temperature change value of the heating resistor (3), and the temperature resistor (5) is used for detecting the ambient temperature.
Heating resistor (3) and thermistor set up in heat dissipation chamber (8) within range, heat dissipation chamber (8) set up the downside at heating resistor (3) and two at least thermistors promptly, heat dissipation chamber (8) mainly used completely cuts off heating resistor (3) and two at least thermistors's temperature transmission to basement (1), the heat capacity that is favorable to whole hydrogen sensor can not rise along with the rising of heating resistor (3) and two at least thermistors temperature, this has reduced hydrogen sensor's heat capacity to a certain extent, the effectual heat dissipation, so that hydrogen sensor in time makes a response to hydrogen.
It should be noted that the number of the at least two thermistors (4) and the number of the temperature resistors (5) are not specifically limited, and two thermistors (4) and two temperature resistors (5) are exemplified in the embodiment of the present application.
In a specific embodiment, as shown in fig. 2, which is a schematic diagram of a detection result between an output response time and a hydrogen concentration value of a hydrogen sensor when the hydrogen sensor detects hydrogen provided in the embodiment of the present application, it can be seen from the diagram that when the content of hydrogen reaches a certain value, the response time of the hydrogen sensor is about 0.3 seconds, and thus the hydrogen concentration value can be obtained quickly, and an alarm requirement of a vehicle-scale sensor is met.
In an alternative embodiment, the thickness of the first thin film (2) is 0.5-5um, and the thickness of the second thin film (7) is 0.1-5 um, it should be noted that the thickness of the first thin film (2) and the thickness of the second thin film (7) are related to the structural strength of the device made of the material, and those skilled in the art can realize the optimal thickness of each thin film under certain impact through design.
Further, the thickness of the first film (2) may be 0.5 to 3um, 0.5 to 4um, 1.0 to 3um, 1.0 to 4um, 1.0 to 5um, 2.0 to 3um, 2.0 to 4um, 2.0 to 5um, 3.0 to 4um, 3.0 to 5um, 4.0 to 5um, and the like, and the optimum thickness of the first film (2) in the present embodiment is 3.0 to 4um, and the thickness of the second film (7) may be 0.1 to 3um, 0.1 to 4um, 0.1 to 5um, 0.5 to 3um, 0.5 to 4um, 1.0 to 2um, 1.0 to 3um, 1.0 to 4um, 1.0 to 5um, 2.0 to 3um, 2.0 to 4um, 2.0 to 5um, 3.0 to 4um, 3.0 to 5um, 3.0 to 4um, and 4.0 to 5um, and the optimum thickness of the second film (7) in the present embodiment is 0 to 2.
In the embodiment of the application, the first film (2) in the hydrogen sensor has double functions, wherein the first function is used for isolating the substrate (1) from the sensor assembly to prevent the substrate (1) and the sensor assembly from carrying out temperature transmission, so that effective heat insulation is realized, the temperature of the sensor assembly is not transmitted to the substrate (1), the substrate (1) is kept in a normal temperature state all the time, the heat capacity of the hydrogen sensor is reduced to a certain extent, and the thermal response speed when the hydrogen is detected is greatly improved; the second important function is for protecting the resistance device, and its sensor assembly such as heating resistor (3), thermistor and temperature resistance (5) mainly is the metal resistance wire, and the structure is more fragile, if do not protect the sensor assembly, then very easily causes the damage of sensor assembly, if the sensor assembly damages then can make the hydrogen sensor can not judge the concentration value of hydrogen according to the temperature variation value of thermistor sensing in the sensor assembly, in case take place hydrogen and reveal, then probably cause serious incident.
In an alternative embodiment, the material of the second film (7) comprises any one or more of silicon oxide, silicon nitride and aluminum oxide.
In an alternative embodiment, a second membrane (7) covers the sensor assembly.
In the embodiment of the application, the second film (7) is made of any one of silicon oxide, silicon nitride and aluminum oxide or any combination of silicon oxide, silicon nitride and aluminum oxide, and the second film (7) covers the sensor assembly, so that on one hand, the sensor assembly is prevented from being exposed in the air and is made to react with the air, the sensor assembly is protected, and on the other hand, the pad structure (6) is exposed outside, so that the pad structure (6) can be connected with an external control circuit.
In an optional embodiment, the hydrogen sensor further comprises a pad structure (6), one end of the pad structure (6) is respectively connected with the heating resistor (3), the temperature resistor (5) and the at least two thermistors, the other end of the pad structure (6) is connected with an external control circuit, and the external control circuit is used for providing a constant current source or a constant voltage source for the heating resistor (3), the temperature resistor (5) and the at least two thermistors.
In the embodiment of the present application, as shown in fig. 3, which is a top view of the hydrogen sensor provided in the embodiment of the present application, the pad structure (6) is as shown in fig. 3, the pad structure (6) may not only fix the heating resistor (3), the temperature resistor (5) and the thermistor (4), but also be connected to an external control circuit, and the external control circuit is configured to provide a constant current source or a constant voltage source for the heating resistor (3), the temperature resistor (5) and the thermistor (4), so as to determine temperature changes of the heating resistor (3), the temperature resistor (5) and the thermistor (4), and further determine a concentration value of hydrogen.
In an alternative embodiment, the first thin film (2) is made of a silicon wafer by thin film deposition on the substrate (1). The thin film deposition may include thin film deposition methods such as electron beam evaporation, magnetron sputtering, and atomic layer deposition, and may also include other thin film deposition methods, which are not listed here.
In an alternative embodiment, the at least two thermistors include a first thermistor (401) and a second thermistor (402), the first thermistor (401) and the second thermistor (402) are respectively arranged on two sides of the heating resistor (3), a first gas channel is formed between the first thermistor (401) and the heating resistor (3), and a second gas channel is formed between the second thermistor (402) and the heating resistor (3).
In an alternative embodiment, the first thermistor (401) and the second thermistor (402) are symmetrically arranged on both sides of the heating resistor (3).
In an alternative embodiment, the first thermistor (401) is used for sensing first temperature information of the heating resistor (3); the second thermistor (401) is used for sensing second temperature information of the heating resistor (3); the first temperature information is different from the second temperature information when hydrogen gas passes through the first gas passage and the second gas passage.
Specifically, when the concentration of hydrogen is within a preset threshold range and the flow rate is high, two thermistors may be decreased, as shown in fig. 4, which is a schematic diagram of the temperature field distribution on the surface of the hydrogen sensor when the flow rate of hydrogen is high according to an embodiment of the present application, specifically, a first thermistor (401) and a second thermistor (402) are symmetrically disposed on both sides of a heating resistor (3), when there is hydrogen leakage, the concentration value of hydrogen is within the preset threshold range and the flow rate is low, the temperature field distribution on the surface of the hydrogen sensor is not affected, but when the flow rate of hydrogen is high, the flow rate may bring the temperature field on the surface of the hydrogen sensor to the direction in which hydrogen flows, at this time, a first temperature information of the heating resistor (3) sensed by the first thermistor (401) on both sides of the heating resistor (3) and a second temperature information of the heating resistor (3) sensed by the second thermistor (401) may be significantly different, at this time, an error value of the concentration value of hydrogen and the actual flow rate of hydrogen may be calculated according to the first temperature information of the first thermistor (401) sensed by the first thermistor (3) and the second temperature information of the heating resistor (3), and the actual flow rate of hydrogen may be eliminated.
The hydrogen flow rate is proportional to the square of the temperature difference between the first temperature information of the heating resistor (3) sensed by the first thermistor (401) and the second temperature information of the heating resistor (3) sensed by the second thermistor (401), and can be expressed as:
wherein V is the hydrogen flow rate, Δ T is the temperature difference between the two thermistors (4), and T h The temperature of the heating resistor (3) is used for determining the concentration value of the hydrogen, so that the measurement accuracy of the hydrogen sensor is improved to a certain extent, and the possibility of misinformation is avoided.
According to the technical scheme of the embodiment of the application, the method has the following beneficial effects:
the hydrogen sensor prepared by the method has the advantages of low integral heat capacity and quick thermal response, and meanwhile, the safety performance of a vehicle in running is improved; through the structural design that the first film and the second film which are sequentially arranged in the direction far away from the substrate and the sensor assembly is arranged between the first film and the second film, the thermal response speed of the hydrogen sensor is only tens of milliseconds, and the hydrogen detection speed is less than 0.5 second, so that compared with the traditional hydrogen sensor, the response time is greatly reduced, and the requirement of alarming in the second level of the vehicle-scale hydrogen sensor is met; in the hydrogen sensor structure of this application preparation, thermistor symmetry sets up in heating resistor's both sides, confirms actual hydrogen concentration value according to the temperature difference at thermistor both ends and hydrogen thermal conductivity coefficient, can effectively prevent because of the concentration value output error that different hydrogen flow rates produced, avoids the false positive to under hydrogen energy automobile service environment, can acquire hydrogen concentration value fast, satisfy car rule level sensor alarm demand.
In an embodiment of the present application, a method for manufacturing the hydrogen sensor is further provided, please refer to fig. 5, which is a schematic flow chart of the method for manufacturing a hydrogen sensor provided in the embodiment of the present application, including the following steps:
s1: providing a substrate (1), and cleaning the substrate (1);
it should be noted that, in the implementation of the present application, the substrate (1) may be a silicon substrate, and may also be other substrate (1) materials, which are not limited herein.
S2: carrying out film deposition on a substrate (1) to form a first film (2) with a preset depth on the substrate (1);
it should be noted that the thin film deposition may include one of electron beam evaporation, magnetron sputtering and atomic layer deposition, and the method of using the thin film deposition may be determined according to specific practical situations, and is not limited specifically herein.
In the embodiment of the application, the thickness of the first film (2) is 0.5-5um, and the first film (2) can be used as a support layer of the heating resistor (3), the two thermistors and the temperature resistor (5) and also can be used as a heat insulation layer of the sensor assembly and the substrate (1).
S3: depositing a metal film on one side of the first film (2) far away from the substrate (1) to form a metal film with a preset depth; etching the metal film, and forming a heating resistor (3), at least two thermistors, a temperature resistor (5) and a bonding pad structure (6) at a preset position;
in the embodiment of the present application, the thickness of the metal thin film is 0.1 to 1um, the metal thin film may be a simple substance metal such as nickel, tungsten, platinum, or an alloy of the foregoing metals, which is not specifically defined herein, the metal thin film deposition is a thin film deposition on the metal, and the thin film deposition method may be one of electron beam evaporation, magnetron sputtering, and atomic layer deposition.
S4: performing film deposition on one side of the heating resistor (3), the at least two thermistors and the temperature resistor (5) far away from the first film (2) to form a second film (7) with a preset depth;
in the embodiment of the application, the thickness of the second film (7) is 0.1-5 um, the material of the second film (7) includes any one or more of silicon oxide, silicon nitride and aluminum oxide, which is not defined herein, the film deposition of the second film (7) at least includes one of electron beam evaporation, magnetron sputtering and atomic layer deposition, and the second film (7) is used for isolating the heating resistor (3), the at least two thermistors and the temperature resistor (5) formed at a preset position from contacting with air, so as to prevent the heating resistor (3), the at least two thermistors and the temperature resistor (5) from being exposed in the air, so that the heating resistor (3), the at least two thermistors and the temperature resistor (5) react with the air, and the effects of protecting the heating resistor (3), the at least two thermistors and the temperature resistor (5) are achieved.
S5: and etching the substrate (1) to form a heat dissipation cavity (8), wherein the heat dissipation cavity (8) is arranged corresponding to the heating resistor (3) and the at least two thermistors to obtain the hydrogen sensor.
In the embodiment of the present application, as shown in fig. 6, which is a schematic diagram of a hydrogen sensor preparation process provided in the embodiment of the present application, the hydrogen sensor is manufactured through the preparation process of fig. 6, and the preparation process is simple, low in cost, and convenient for mass production.
In an optional embodiment, step S6 is followed by: and (4) carrying out electrical packaging treatment on the hydrogen sensor to form a finished product of the hydrogen sensor.
According to the technical scheme of the embodiment of the application, the method has the following beneficial effects:
1. the hydrogen sensor of this application preparation has that whole heat capacity is low, the fast advantage of thermal response, has promoted the security performance of vehicle when driving simultaneously.
2. The hydrogen sensor of this application preparation is through first film and the second film of the micro-nano magnitude that sets gradually in the direction of keeping away from the base, and set up sensor unit's structural design between first film and second film, make hydrogen sensor's thermal response speed only tens of milliseconds, hydrogen detection speed is less than 0.5 second, compare traditional hydrogen sensor, response time reduces by a wide margin, the demand of reporting to the police in car rule level hydrogen sensor second level has been realized.
3. In the hydrogen sensor structure of this application preparation, thermistor symmetry sets up in heating resistor's both sides, confirms actual hydrogen concentration value according to the temperature difference at thermistor both ends and hydrogen thermal conductivity coefficient, can effectively prevent because of the concentration value output error that different hydrogen flow rates produced, avoids the false positive to under hydrogen energy automobile service environment, can acquire hydrogen concentration value fast, satisfy car rule level sensor alarm demand.
4. The hydrogen sensor prepared by the method is realized by adopting a silicon wafer manufacturing technology, so that the consistency of finished products is greatly improved, and the preparation cost is reduced.
5. The preparation method of the hydrogen sensor is simple to operate, low in cost and convenient for mass production.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. A hydrogen gas sensor, comprising: the sensor comprises a substrate (1) and a first thin film (2), a sensor assembly and a second thin film (7) which are sequentially arranged along the direction far away from the substrate (1);
the sensor assembly comprises a heating resistor (3), a temperature resistor (5) and at least two thermistors, wherein the at least two thermistors are arranged adjacent to the heating resistor (3), and the temperature resistor (5) is arranged far away from the heating resistor (3);
a heat dissipation cavity (8) is formed in the substrate (1), and the heating resistor (3) and the thermistor are arranged in the range of the heat dissipation cavity (8);
the at least two thermistors comprise a first thermistor (401) and a second thermistor (402), the first thermistor (401) and the second thermistor (402) are respectively arranged at two sides of the heating resistor (3), and the first thermistor (401) is used for sensing first temperature information of the heating resistor (3); the second thermistor (401) is used for sensing second temperature information of the heating resistor (3);
a first gas passage is formed between the first thermistor (401) and the heating resistor (3), a second gas passage is formed between the second thermistor (402) and the heating resistor (3), and the first temperature information is different from the second temperature information when hydrogen gas passes through the first gas passage and the second gas passage.
2. A hydrogen sensor according to claim 1, characterized in that, the hydrogen sensor further comprises a pad structure (6), one end of the pad structure (6) is connected to the heating resistor (3), the temperature resistor (5) and the at least two thermistors respectively, and the other end of the pad structure (6) is connected to an external control circuit, and the external control circuit is used for providing a constant current source or a constant voltage source for the heating resistor (3), the temperature resistor (5) and the at least two thermistors.
3. A hydrogen sensor according to claim 1, characterized in that the second membrane (7) covers the sensor assembly.
4. A hydrogen sensor according to claim 1, characterized in that said first thermistor (401) and said second thermistor (402) are symmetrically arranged on both sides of said heating resistor (3).
5. A hydrogen sensor according to claim 1, characterized in that said first membrane (2) is made of a silicon wafer by thin film deposition on said substrate (1).
6. A hydrogen sensor according to claim 1, characterized in that the material of the second membrane (7) comprises any one or several of silicon oxide, silicon nitride and aluminum oxide.
7. A hydrogen sensor according to claim 1, characterised in that the thickness of the first film (2) is 0.5 to 5 micrometres and the thickness of the second film (7) is 0.1 to 5 micrometres.
8. A method for producing a hydrogen sensor as claimed in any of claims 1 to 7, comprising the following steps:
providing a substrate (1), and cleaning the substrate (1);
carrying out thin film deposition on the substrate (1), and forming a first thin film (2) with a preset depth on the substrate (1);
depositing a metal film on one side of the first film (2) far away from the substrate (1) to form a metal film with a preset depth; etching the metal film, and forming a heating resistor (3), at least two thermistors, a temperature resistor (5) and a bonding pad structure (6) at a preset position;
carrying out film deposition on one side of the heating resistor (3), the at least two thermistors and the temperature resistor (5) far away from the first film (2) to form a second film (7) with a preset depth;
and etching the substrate (1) to form a heat dissipation cavity (8), wherein the heat dissipation cavity (8) is arranged corresponding to the heating resistor (3) and the at least two thermistors, so that the hydrogen sensor is obtained.
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| CN212903385U (en) * | 2020-10-22 | 2021-04-06 | 无锡芯灵微电子有限公司 | Temperature difference type gas flow sensor based on MEMS |
| CN112763660B (en) * | 2020-12-28 | 2022-01-04 | 苏州芯镁信电子科技有限公司 | Palladium film hydrogen sensor |
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