CN113964648A - Surface emitting semiconductor laser - Google Patents

Surface emitting semiconductor laser Download PDF

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Publication number
CN113964648A
CN113964648A CN202111223894.7A CN202111223894A CN113964648A CN 113964648 A CN113964648 A CN 113964648A CN 202111223894 A CN202111223894 A CN 202111223894A CN 113964648 A CN113964648 A CN 113964648A
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China
Prior art keywords
electrode
distributed feedback
top surface
isolation layer
mesa
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CN202111223894.7A
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CN113964648B (en
Inventor
徐长达
金亚
穆春元
陈伟
李明
祝宁华
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors

Abstract

The present invention provides a surface emitting semiconductor laser, including: a substrate; a lower distributed feedback mirror located on the substrate; a first isolation layer and a first electrode are arranged on one side of the top surface of the lower distributed feedback reflector, and a source layer, an upper distributed feedback reflector, a second isolation layer and a second electrode are arranged on the other side of the top surface of the lower distributed feedback reflector; the first isolation layer is positioned between the first electrode and the lower distributed feedback reflector, and the first electrode is intersected with two side surfaces of the first isolation layer; the active layer is positioned between the upper distributed feedback reflector and the lower distributed feedback reflector; the top surface of the upper distributed feedback reflector comprises a low top surface and a high top surface, a second electrode is arranged on the low top surface, a second isolation layer is arranged between the low top surface and the second electrode, and the second electrode is intersected with two side surfaces of the second isolation layer; the first electrode and the second electrode are close to each other, a third isolation layer is arranged around the side face of the high top face of the upper distribution feedback reflector, and a light outlet hole is formed around the high top face of the upper distribution feedback reflector by the third isolation layer.

Description

Surface emitting semiconductor laser
Technical Field
The invention relates to the field of semiconductors, in particular to a surface-emitting semiconductor laser.
Background
In the prior art, the current of the surface emitting semiconductor laser flows vertically, and in order to improve the conductivity, the distributed feedback mirror needs to be doped, but the loss of light in the feedback process is increased. On the other hand, the surface emitting semiconductor laser has a large light exit hole, and therefore the mode of laser light is a multi-lateral mode. When light output by multiple transverse modes is transmitted in the optical fiber, the intermodal dispersion of the light is larger, and the corresponding transmission distance is reduced. This results in the communication distance of the surface-emitting laser in the data center being limited to 200 m. The conventional semiconductor laser device mainly realizes a single transverse mode by reducing the light emitting hole, but the mode of reducing the light emitting hole has two problems: firstly, the lateral limitation of the current is realized by lateral oxidation, if the light-emitting hole is reduced, the lateral oxidation is further aggravated, the gain area is reduced, and therefore the current threshold value which enables the surface-emitting semiconductor laser to be capable of lasing is improved; second, the yield of achieving a single transverse mode of the laser by the lateral oxidation process is low.
In implementing the disclosed concept, the inventors found that there are at least the following problems in the related art: the distributed feedback reflector needs to be doped, so that the loss of light in the feedback process is increased; the laser light emitted by the surface-emitting semiconductor laser is in a multi-transverse mode, and the transmission distance is short; the surface emitting semiconductor laser realizes a single transverse mode by reducing the light outlet hole, the gain area can be reduced, and the current threshold value of the surface emitting semiconductor laser capable of lasing is improved; the yield of achieving a single transverse mode of the laser by the process of lateral oxidation is low.
Disclosure of Invention
To overcome at least one aspect of the above problems, the present disclosure provides a surface emitting semiconductor laser including:
a substrate;
a lower distributed feedback mirror located on the substrate;
a first isolation layer and a first electrode are arranged on one side of the top surface of the lower distributed feedback reflector, and a source layer, an upper distributed feedback reflector, a second isolation layer and a second electrode are arranged on the other side of the top surface of the lower distributed feedback reflector;
the first isolation layer is positioned between the first electrode and the lower distributed feedback reflector, and the first electrode is intersected with two side surfaces of the first isolation layer;
the active layer is positioned between the upper distributed feedback reflector and the lower distributed feedback reflector;
the top surface of the upper distributed feedback reflector comprises a low top surface and a high top surface, a second electrode is arranged on the low top surface, a second isolation layer is arranged between the low top surface and the second electrode, and the second electrode is intersected with two side surfaces of the second isolation layer;
the first electrode and the second electrode are close to each other, a third isolation layer is arranged around the side face of the high top face of the upper distribution feedback reflector, and a light outlet hole is formed around the high top face of the upper distribution feedback reflector by the third isolation layer.
According to the embodiment of the present disclosure, the light exit hole is perpendicular to the top surfaces of the first electrode and the second electrode;
the first electrode and the second electrode are arranged at opposite sides relative to the light outlet hole;
the top surface of the first electrode is lower than the top surface of the second electrode.
According to an embodiment of the present disclosure, the lower distributed feedback mirror top surface includes a lower top surface and a higher top surface, the active layer is disposed on the higher top surface, and the first electrode is disposed on the lower top surface.
According to an embodiment of the present disclosure, further comprising a first mesa and a second mesa;
the first electrode completely or partially covers the first table-board;
the second electrode completely or partially covers the second mesa.
According to the embodiment of the present disclosure, the upper surface and the side surface of the first isolation layer, and the surface of the first electrode extending laterally with respect to the contact portion of the lower distributed feedback mirror constitute a first mesa;
the upper surface and the side surface of the second isolation layer, and the surface of the second electrode which transversely extends with the contact part of the upper distribution feedback reflector form a second table-board.
According to an embodiment of the present disclosure, the lower distributed feedback mirror is an N-type distributed feedback mirror, the first mesa is an N-type mesa, and the first electrode includes an N-face electrode;
the upper distributed feedback reflector is a P-type distributed feedback reflector, the second table-board is a P-type table-board, and the second electrode comprises a P-side electrode.
According to an embodiment of the present disclosure, the lower distributed feedback mirror is a P-type distributed feedback mirror, the first mesa is a P-type mesa, and the first electrode includes a P-side electrode;
the upper distributed feedback reflector is an N-type distributed feedback reflector, the second table-board is an N-type table-board, and the second electrode comprises an N-surface electrode.
According to an embodiment of the present disclosure, the first electrode and the second electrode are proximate to the third isolation layer.
According to an embodiment of the present disclosure, the cross-sectional shape of the light exit hole includes a circle, an ellipse, a square, or a rectangle.
According to an embodiment of the present disclosure, the first electrode and the second electrode surround the light exit hole in a semicircular ring shape.
Based on the technical scheme, the method has the following beneficial effects:
the present disclosure provides a surface emitting semiconductor laser, including: a substrate; a lower distributed feedback mirror located on the substrate; a first isolation layer and a first electrode are arranged on one side of the top surface of the lower distributed feedback reflector, and a source layer, an upper distributed feedback reflector, a second isolation layer and a second electrode are arranged on the other side of the top surface of the lower distributed feedback reflector; the first isolation layer is positioned between the first electrode and the lower distributed feedback reflector, and the first electrode is intersected with two side surfaces of the first isolation layer; the active layer is positioned between the upper distributed feedback reflector and the lower distributed feedback reflector; the top surface of the upper distributed feedback reflector comprises a low top surface and a high top surface, a second electrode is arranged on the low top surface, a second isolation layer is arranged between the low top surface and the second electrode, and the second electrode is intersected with two side surfaces of the second isolation layer; the first electrode and the second electrode are close to each other, a third isolation layer is arranged around the side face of the high top face of the upper distribution feedback reflector, and a light outlet hole is formed around the high top face of the upper distribution feedback reflector by the third isolation layer. By this arrangement, the electrical confinement is made independent of the optical confinement; the current can flow in the horizontal direction, the feedback mirrors are distributed up and down without doping, and the loss of light in the feedback process is low; the surface emitting semiconductor laser can realize a single transverse mode by setting the proper size of the light outlet, the current threshold value for laser emission of the surface emitting semiconductor laser cannot be increased, and the light transmission distance is increased; and a side oxidation process is not needed, so that the yield is high.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic cross-sectional structure of a surface emitting semiconductor laser of an embodiment of the present disclosure;
fig. 2 is a schematic perspective view of a surface emitting semiconductor laser according to an embodiment of the present disclosure.
[ description of reference ]
1-substrate
2-lower type distributed feedback reflector
3-first isolation layer
4-first electrode
5-active layer
6-up distributed feedback mirror
7-second barrier layer
8-second electrode
9-third spacer layer
10-light-emitting hole
11-first table top
12-second table top
Detailed Description
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
The present invention will be described in detail with reference to the drawings, wherein for convenience of illustration, the drawings showing the structure of the device are not enlarged partially according to the general scale, and the drawings are only examples, which should not limit the scope of the invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
The use of ordinal numbers such as "first," "second," etc., in the present disclosure to modify a claimed element, region (e.g., a first electrode, a first separator layer, etc.) does not by itself connote any preceding element, region, or sequence preceding or succeeding in manufacturing process, but are used merely to clearly distinguish one element, region, and region having a certain name from another element, region, and region having a same name.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present.
Fig. 1 is a schematic cross-sectional structure of a surface emitting semiconductor laser of an embodiment of the present disclosure; fig. 2 is a schematic perspective view of a surface emitting semiconductor laser according to an embodiment of the present disclosure. In the prior art, the electrodes are generally located on the upper and lower surfaces of the light exit hole 10, the active layer 5 is located below the light exit hole 10, the current flows in the vertical direction, and only a small amount of current can flow below the light exit hole 10, but the active layer 5 below the light exit hole 10 is a place where light is emitted, like a filament in a bulb, and if the current flowing through the filament is small, the light emitting efficiency is low. In order to ensure that a large current can flow through the active layer 5 below the light exit aperture 10, the surface-emitting semiconductor laser needs to be side-oxidized. The side surface oxidation is to make a bottleneck of current above the active layer 5, the periphery of the bottleneck is blocked by an isolating layer formed by oxide, the current can only flow downwards from the bottleneck in the middle, like a beer bottle, the current can only flow into the beer bottle from the bottleneck and then reaches the active layer 5 below the light outlet 10, in addition, the single transverse mode is realized, the transverse size of the optical cavity is at least ensured to be 2um, and the current side direction oxidation process is difficult to realize the high precision. As shown in fig. 1 and 2, the present disclosure provides a surface emitting semiconductor laser including:
a substrate 1; a lower distributed feedback mirror located on the substrate 1; a first isolation layer 3 and a first electrode 4 are arranged on one side of the top surface of the lower distributed feedback reflector, and an active layer 5, an upper distributed feedback reflector 6, a second isolation layer 7 and a second electrode 8 are arranged on the other side of the top surface of the lower distributed feedback reflector; the first isolation layer 3 is positioned between the first electrode 4 and the lower distributed feedback reflector, and the first electrode 4 is intersected with two side surfaces of the first isolation layer 3; the active layer 5 is positioned between the upper distributed feedback mirror 6 and the lower distributed feedback mirror; the top surface of the upper distributed feedback reflector 6 comprises a low top surface and a high top surface, a second electrode 8 is arranged on the low top surface, a second isolation layer 7 is arranged between the low top surface and the second electrode 8, and the second electrode 8 is intersected with two side surfaces of the second isolation layer 7; a third isolation layer 9 is arranged on the side where the first electrode 4 and the second electrode 8 are close to each other and around the side of the high top surface of the upper distributed feedback reflector 6, and the third isolation layer 9 forms a light exit hole 10 around the high top surface of the upper distributed feedback reflector 6.
The upper distributed feedback mirror 6 comprises a laterally extending portion in contact with the second spacer 7 and the second electrode 8, and a portion in contact with the third spacer 9, substantially assuming a shape such as "".
A current flows horizontally between the first electrode 4 and the second electrode 8, and the current brings gain through the active layer 5, and spontaneous emission photons are generated, theoretically, spontaneous emission photons appear in all directions, but since the distributed feedback mirror of the present embodiment exists only in the up-down direction, photons in the up-down direction can be fed back, and when the gain in this direction is equal to the loss, the surface emitting laser starts lasing at the light exit hole 10. As shown by the arrows in fig. 1, the optical field resonates inside the laser in the vertical direction, the first isolation layer 3, the second isolation layer 7, and the third isolation layer 9 are used for electric field confinement, and the light-emitting direction is the light-emitting direction.
In addition, the light exit hole 10 is perpendicular to the top surfaces of the first electrode 4 and the second electrode 8; the first electrode 4 and the second electrode 8 are on opposite sides with respect to the light exit aperture 10; the top surface of the first electrode 4 is lower than the top surface of the second electrode 8.
In the surface emitting semiconductor laser provided by this embodiment, the light exit hole 10 is located at the top of the surface emitting semiconductor laser, the electrodes are located at the left and right sides of the light exit hole 10, the active layer 5 is located below the light exit hole 10, and current can flow in the horizontal direction and can flow below the light exit hole 10 through the active layer 5, so that the upper distribution feedback mirror 6 or the lower distribution feedback mirror 2 does not need to be doped, and loss of light in the feedback process is reduced; the distributed feedback reflector of the embodiment only exists in the up-down direction, can bring optical feedback in the vertical direction and realize lateral limitation, so that a side oxidation process is not needed; the flow of current can be restricted by providing the first isolation layer 3, the second isolation layer 7, and the third isolation layer 9; the light exit hole 10 is etched and set to a proper size, so that the current threshold value for causing the surface emitting semiconductor laser to lase is not increased, and the surface emitting semiconductor laser in a single transverse mode can be obtained, and the transmission distance is longer.
As an alternative embodiment, the lower distributed feedback mirror top surface comprises a lower top surface and a higher top surface, the active layer 5 being arranged on the higher top surface and the first electrode 4 being arranged on the lower top surface.
In addition, the surface-emitting semiconductor laser of the present embodiment further includes a first mesa 11 and a second mesa 12; the first electrode 4 may completely or partially cover the first mesa 11; the second electrode 8 may completely or partially cover the second mesa 12. Fig. 2 is a schematic view of the first electrode 4 and the second electrode 8 partially covering the first mesa 11 and the second mesa 12, respectively.
When the first electrode 4 completely covers the first mesa 11, the contact part of the first electrode 4, the first isolation layer 3 and the lower distributed feedback reflector is the first mesa 11; when the second electrode completely covers the second mesa 12, the second electrode 8 and the second isolation layer 7 and the contact portion of the upper distributed feedback mirror 6 are the second mesa 12.
When the first electrode 4 partially covers the first mesa 11, the first electrode 4 and the contact part of the first isolation layer 3 and the lower distributed feedback mirror extend transversely to form the first mesa 11; when the second electrode part covers the second mesa 12, the second electrode 8 and the contact part of the second isolation layer 7 and the upper distributed feedback reflector 6 extend transversely to form a second mesa 12, and the first mesa 11 comprises a mesa in which the contact part of the first electrode 4 and the first isolation layer 3 extends transversely and a mesa in which the contact part of the first electrode 4 and the lower distributed feedback reflector extends transversely; the second mesa 12 comprises a laterally extending mesa of the contact portion of the second electrode with the second spacer 7 and a laterally extending mesa of the contact portion of the second electrode 8 with the upper distributed feedback mirror 6.
As shown in fig. 1 and 2, the first and second mesas 11 and 12 may extend as long as the width of the substrate 1, the first and second mesas 11 and 12 may substantially assume a shape such as a chair, and the shape and size of the first and second mesas 11 and 12 may also take different forms as needed.
In the surface emitting semiconductor laser of the embodiment, current flows horizontally between the first mesa 11 and the second mesa 12, the conductivity of the surface emitting semiconductor laser is very high, and the upper and lower distributed feedback reflectors do not need to be doped, so that the loss of light in the feedback process is reduced, and the gain effect is improved.
As an alternative embodiment, the lower dfe is an N-type dfe, the first mesa 11 is an N-type mesa, and the first electrode 4 comprises an N-surface electrode; the upper distributed feedback mirror 6 is a P-type distributed feedback mirror, the second mesa 12 is a P-type mesa, and the second electrode 8 includes a P-type electrode.
As an alternative embodiment, the lower dfe is a P-type dfe, the first mesa 11 is a P-type mesa, and the first electrode 4 includes a P-type electrode; the upper distributed feedback mirror 6 is an N-type distributed feedback mirror, the second mesa 12 is an N-type mesa, and the second electrode 8 includes an N-face electrode.
In the surface emitting semiconductor laser of the embodiment, the optical field generates resonance in the laser along the vertical direction, the current flows into the N-type mesa from the P-surface mesa along the horizontal direction, and the electric field is limited in each direction by preparing the mesa and the electrode.
In order to achieve a better current injection effect, the first electrode 4 is closely attached to the first mesa 11; the second electrode 8 is closely attached to the second mesa 12. The first electrode 4 and the second electrode 8 are close to the light emitting hole 10 as much as possible, and the first isolation layer 3, the second isolation layer 7 and the third isolation layer 9 are arranged, so that the first electrode 4 and the second electrode 8 are close to the third isolation layer 9, and current is injected and flows out at a position close to the light emitting hole 10.
In addition, the cross-sectional shape of the light exit hole 10 includes a circle, an ellipse, a square, or a rectangle. Taking a circular shape as an example, as shown in fig. 2, the first electrode 4 and the second electrode 8 surround the light exit hole 10 in a semicircular ring shape, so that current is injected and discharged at a position close to the light exit hole 10.
According to the surface emitting semiconductor laser, the upper and lower distributed feedback reflectors do not need to be doped, and the loss of light in the feedback process is reduced; a side oxidation process is not needed, so that the process difficulty and the process steps are reduced; the current can be limited to flow in different directions; and a single transverse mode surface emitting semiconductor laser can be obtained, and the transmission distance is longer.
It should be noted that fig. 1 and 2 are only examples to which the embodiments of the present disclosure may be applied to help those skilled in the art understand the technical content of the present disclosure, but the present disclosure is not limited to only one structure, for example, the shape and size of the first mesa and the second mesa may be different according to the needs, and the first electrode may be completely or partially covered on the first mesa; the second electrode may completely or partially cover the second mesa, etc.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A surface emitting semiconductor laser, comprising:
a substrate;
a lower distributed feedback mirror located on the substrate;
a first isolation layer and a first electrode are arranged on one side of the top surface of the lower distributed feedback reflector, and a source layer, an upper distributed feedback reflector, a second isolation layer and a second electrode are arranged on the other side of the top surface of the lower distributed feedback reflector;
the first isolation layer is positioned between the first electrode and the lower distributed feedback reflector, and the first electrode is intersected with two side surfaces of the first isolation layer;
the active layer is positioned between the upper distributed feedback mirror and the lower distributed feedback mirror;
the top surface of the upper distributed feedback reflector comprises a low top surface and a high top surface, the second electrode is arranged on the low top surface, the second isolation layer is arranged between the low top surface and the second electrode, and the second electrode is intersected with two side surfaces of the second isolation layer;
and a third isolation layer is arranged on one side of the first electrode, which is close to the second electrode, and around the side surface of the high top surface of the upper distribution feedback reflector, and the third isolation layer forms a light outlet hole around the high top surface of the upper distribution feedback reflector.
2. A surface emitting semiconductor laser as claimed in claim 1 wherein said light exit aperture is perpendicular to the top surface of said first and second electrodes;
the first electrode and the second electrode are on opposite sides with respect to the light exit aperture;
the top surface of the first electrode is lower than the top surface of the second electrode.
3. A surface emitting semiconductor laser as claimed in claim 1 wherein said lower distributed feedback mirror top surface comprises a lower top surface and an upper top surface, said active layer being disposed on said upper top surface and said first electrode being disposed on said lower top surface.
4. A surface emitting semiconductor laser as claimed in claim 1 further comprising a first mesa and a second mesa;
the first electrode completely or partially covers the first mesa;
the second electrode completely or partially covers the second mesa.
5. A surface emitting semiconductor laser as claimed in claim 1 wherein the upper surface and the side surfaces of said first spacer layer and the laterally extending surfaces of the contact portions of said first electrode and said lower distributed feedback mirror form a first mesa;
and the upper surface and the side surface of the second isolation layer, and the surface of the second electrode, which transversely extends with the contact part of the upper distribution feedback reflector, form a second table-board.
6. A surface emitting semiconductor laser as claimed in claim 5 wherein said lower distributed feedback mirror is an N-type distributed feedback mirror, said first mesa is an N-type mesa, and said first electrode comprises an N-face electrode;
the upper distributed feedback reflector is a P-type distributed feedback reflector, the second table-board is a P-type table-board, and the second electrode comprises a P-surface electrode.
7. A surface emitting semiconductor laser as claimed in claim 5 wherein said lower distributed feedback mirror is a P-type distributed feedback mirror, said first mesa is a P-type mesa, and said first electrode comprises a P-plane electrode;
the upper distributed feedback reflector is an N-type distributed feedback reflector, the second table-board is an N-type table-board, and the second electrode comprises an N-surface electrode.
8. A surface emitting semiconductor laser as claimed in claim 1 wherein said first electrode and said second electrode are proximate said third spacer layer.
9. A surface emitting semiconductor laser as claimed in claim 1 wherein the cross-sectional shape of the light exit aperture comprises a circle, oval, square or rectangle.
10. A surface emitting semiconductor laser as claimed in claim 1 wherein said first electrode and said second electrode are semi-circular surrounding said exit aperture.
CN202111223894.7A 2021-10-20 2021-10-20 Surface emitting semiconductor laser Active CN113964648B (en)

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