CN113964278A - Organic light emitting transistor, manufacturing method thereof and display device - Google Patents

Organic light emitting transistor, manufacturing method thereof and display device Download PDF

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Publication number
CN113964278A
CN113964278A CN202111246673.1A CN202111246673A CN113964278A CN 113964278 A CN113964278 A CN 113964278A CN 202111246673 A CN202111246673 A CN 202111246673A CN 113964278 A CN113964278 A CN 113964278A
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electrode
layer
light emitting
organic light
transport layer
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王鹏
张娟
焦志强
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]

Abstract

The invention provides an organic light-emitting transistor, a manufacturing method thereof and a display device, and belongs to the technical field of display. Wherein, organic light emitting transistor includes: the grid electrode, the first pole and the second pole are transparent, and the active layer comprises a hole transport layer, a light emitting layer and an electron transport layer which are sequentially stacked. The technical scheme of the invention can realize the organic light-emitting transistor with double-sided light emission.

Description

Organic light emitting transistor, manufacturing method thereof and display device
Technical Field
The present invention relates to the field of display technologies, and in particular, to an organic light emitting transistor, a method for manufacturing the same, and a display device.
Background
In recent years, Organic Light Emitting Diodes (OLEDs) and Organic Field Effect Transistors (OFETs) have attracted much attention and research due to their advantages of being inexpensive, lightweight, and flexible. In the display field, flexible and transparent display becomes one of the development trends of future display technologies, and the OLED-based transparent display technology is currently the most mainstream research direction and develops rapidly.
An Organic Light Emitting Transistor (OLET) is a novel organic optoelectronic device with electroluminescence characteristics based on an OFET structure, combines the advantages of the OFET and an OLED, integrates a light emitting and controlling unit into one organic device, improves the integration level of the device, simplifies the preparation process, and is considered to be one of effective solutions for really realizing full-organic high-integration active matrix display in the future.
Disclosure of Invention
The invention aims to provide an organic light-emitting transistor, a manufacturing method thereof and a display device, and the organic light-emitting transistor capable of realizing double-sided light emission.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, there is provided an organic light emitting transistor including:
the grid electrode, the first pole and the second pole are transparent, and the active layer comprises a hole transport layer, a light emitting layer and an electron transport layer which are sequentially stacked.
In some embodiments, the first electrode is a source electrode, the second electrode is a drain electrode, and the organic light emitting transistor specifically includes:
a gate electrode;
a gate insulating layer;
a source electrode;
a hole transport layer;
a light emitting layer;
an electron transport layer;
and a drain electrode.
In some embodiments, the first electrode is a drain electrode, the second electrode is a source electrode, and the organic light emitting transistor specifically includes:
a gate electrode;
a gate insulating layer;
a drain electrode;
an electron transport layer;
a light emitting layer;
a hole transport layer;
and a source electrode.
In some embodiments, the source is in a grid.
In some embodiments, the source employs any one of: carbon nanotubes, silver nanowires, single-layer graphene films.
In some embodiments, the drain electrode is made of an alloy of Mg and Ag.
In some embodiments, the gate electrode is made of a transparent conductive material.
Embodiments of the present invention provide a display device including the organic light emitting transistor as described above.
The embodiment of the invention provides a manufacturing method of an organic light-emitting transistor, which comprises the following steps:
preparing a grid electrode, a grid insulating layer, a first pole, an active layer and a second pole which are sequentially stacked;
the grid electrode, the first electrode and the second electrode are transparent, and the active layer comprises a hole transport layer, a light emitting layer and an electron transport layer which are sequentially stacked.
In some embodiments, preparing the gate electrode, the gate insulating layer, the first electrode, the active layer, and the second electrode, which are sequentially stacked, includes:
providing a substrate;
preparing a grid electrode on the substrate;
preparing a gate insulating layer by using a chemical vapor deposition method;
preparing a mesh source electrode by adopting a dipping and pulling method;
sequentially evaporating a hole transport layer, a luminescent layer and an electron transport layer on the source electrode by adopting a vacuum evaporation method;
and evaporating and plating a drain electrode on the electron transport layer.
In some embodiments, preparing the gate electrode, the gate insulating layer, the first electrode, the active layer, and the second electrode, which are sequentially stacked, includes:
providing a substrate;
preparing a mesh-shaped source electrode on the substrate;
sequentially evaporating a hole transport layer, a luminescent layer and an electron transport layer on the source electrode by adopting a vacuum evaporation method;
evaporating and plating a drain electrode on the electron transport layer;
evaporating a gate insulating layer on the drain electrode;
and preparing a grid electrode on the grid insulating layer.
The embodiment of the invention has the following beneficial effects:
in the above scheme, the organic light emitting transistor comprises a gate, a gate insulating layer, a first pole, an active layer and a second pole which are sequentially stacked, the organic light emitting transistor adopts a vertical structure, is not limited by the length of a channel, has the advantages of short channel, low gate voltage, large light emitting area and the like, can realize higher current output under low working voltage, and is high in light emitting efficiency, and the gate, the first pole and the second pole are transparent, so that double-sided light emission of the organic light emitting transistor can be realized, and double-sided display of the display device is further realized.
Drawings
Fig. 1 and 2 are schematic structural views of an organic light emitting transistor according to an embodiment of the present invention;
FIG. 3 is a graph showing transmittance curves for various structures;
FIG. 4 is a schematic diagram of a current-voltage characteristic curve of an organic light emitting transistor according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a luminance voltage characteristic curve of an organic light emitting transistor according to an embodiment of the invention.
Reference numerals
1 substrate
2 grid
3 gate insulating layer
4 source electrode
5 hole transport layer
6 light-emitting layer
7 electron transport layer
8 drain electrode
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
The embodiment of the invention provides an organic light-emitting transistor, a manufacturing method thereof and a display device, and the organic light-emitting transistor capable of realizing double-sided light emission.
An embodiment of the present invention provides an organic light emitting transistor including:
the grid electrode, the first pole and the second pole are transparent, and the active layer comprises a hole transport layer, a light emitting layer and an electron transport layer which are sequentially stacked.
The organic material has natural low carrier mobility, and the OFET in the traditional transverse structure is limited by the channel length, so that the OLET adopting the structure has low response speed, high working voltage, low aperture ratio and low luminous efficiency, and the application of the OFET in flat panel display is limited. In this embodiment, the organic light emitting transistor includes a gate electrode, a gate insulating layer, a first electrode, an active layer, and a second electrode, which are sequentially stacked, and the organic light emitting transistor has a vertical structure, is not limited by a length of a channel, has advantages of a short channel, a low gate voltage, a large light emitting area, and the like, can realize high current output at a low operating voltage, and has high light emitting efficiency.
In the embodiment, the organic light emitting transistor with the vertical structure is adopted, and the light emitting unit (OLED) and the control unit (TFT) are integrated together, so that the multifunction and high integration of the light emitting device are realized, and the preparation difficulty of the active matrix driving device can be reduced.
In some embodiments, the organic light emitting transistor adopts a bottom gate structure, the first electrode is a source electrode, and the second electrode is a drain electrode, as shown in fig. 1, the organic light emitting transistor specifically includes:
a substrate 1;
a gate electrode 2;
a gate insulating layer 3;
a source electrode 4;
a hole transport layer 5;
a light-emitting layer 6;
an electron transport layer 7;
and a drain electrode 8.
The grid electrode is made of transparent conductive materials such as ITO; the gate insulating layer material can be SiNx with high dielectric constant and thickness of 1500 angstroms; for vertical-structure OLET, the thickness of the source is relatively small, such as 80 angstroms, to achieve higher transmittance; and the source electrode has certain roughness, so that a large injection barrier can be formed when the source electrode is contacted with the active layer to realize the switching function of the grid voltage, and the source electrode can be in a grid shape. In some embodiments, the source employs any one of: carbon Nanotubes (CNTs), nanosilver lines, single-layer graphene thin films (SLGs); the hole transport layer is made of a material with high carrier mobility, and the thickness of the hole transport layer can be 500 angstroms; the luminescent layer is made of a material with high carrier mobility, and the thickness can be 350 angstroms; the electron transport layer is made of a material with high carrier mobility, and the thickness of the electron transport layer can be 150 angstroms. The drain electrode adopts Mg: the Ag transparent electrode has good light transmission and conductivity, and can be 120 angstroms thick.
In this embodiment, the hole transport layer, the light emitting layer, and the electron transport layer constitute an active layer, the source electrode, the drain electrode, the active layer, the gate electrode, and the gate insulating layer constitute a thin film transistor portion, and the source electrode, the active layer, and the drain electrode constitute an OLED portion. The switching characteristics of the organic light emitting transistor are mainly controlled by changing the injection efficiency of charges depending on the gate voltage, for example, the device is in an off state when the gate voltage is lower than 15V, and the device is in an on state when the gate voltage is higher than 15V.
When the source electrode adopts CNT, the grid-shaped source electrode is in a discontinuous state under normal conditions, and the OLED part is not conducted when the grid-shaped source electrode is directly electrified; when the thin film transistor part of the organic light emitting transistor is in an open state, electric charges are injected into the device through the CNT thin film in an electric field state, and the interior of the OLED is conducted to generate light emission.
In some embodiments, the organic light emitting transistor adopts a top gate structure, the first electrode is a drain electrode, and the second electrode is a source electrode, as shown in fig. 2, the organic light emitting transistor specifically includes:
a gate electrode 2;
a gate insulating layer 3;
a drain electrode 8;
an electron transport layer 7;
a light-emitting layer 6;
a hole transport layer 5;
and a source electrode 2.
Wherein, the grid adopts Mg: the Ag transparent electrode has good light transmission and conductivity, and the thickness can be 120 angstroms; the gate insulating layer material can be CaF with high dielectric constant2LiF, etc., with a thickness of 1200 angstroms; for vertical-structure OLET, the thickness of the source is relatively small, such as 80 angstroms, to achieve higher transmittance; and the source electrode has certain roughness, so that a large injection barrier can be formed when the source electrode is contacted with the active layer to realize the switching function of the grid voltage, and the source electrode can be in a grid shape. In some embodiments, the source employs any one of: carbon Nanotubes (CNTs), nanosilver lines, single-layer graphene thin films (SLGs); the hole transport layer is made of a material with high carrier mobility, and the thickness of the hole transport layer can be 500 angstroms; the luminescent layer is made of a material with high carrier mobility, and the thickness can be 350 angstroms; the electron transport layer is made of a material with high carrier mobility, and the thickness of the electron transport layer can be 150 angstroms. The drain electrode adopts Mg: the Ag transparent electrode has good light transmission and conductivity, and can be 120 angstroms thick.
In this embodiment, the hole transport layer, the light emitting layer, and the electron transport layer constitute an active layer, the source electrode, the drain electrode, the active layer, the gate electrode, and the gate insulating layer constitute a thin film transistor portion, and the source electrode, the active layer, and the drain electrode constitute an OLED portion. The switching characteristics of the organic light emitting transistor are mainly controlled by changing the injection efficiency of charges depending on the gate voltage, for example, the device is in an off state when the gate voltage is lower than 15V, and the device is in an on state when the gate voltage is higher than 15V.
When the source electrode adopts CNT, the grid-shaped source electrode is in a discontinuous state under normal conditions, and the OLED part is not conducted when the grid-shaped source electrode is directly electrified; when the thin film transistor part of the organic light emitting transistor is in an open state, electric charges are injected into the device through the CNT thin film in an electric field state, and the interior of the OLED is conducted to generate light emission.
Fig. 3 is a graph illustrating transmittance curves of different structures, where S1 is a transmittance curve of an ITO thin film, S2 is a transmittance curve of a composite structure of an ITO thin film and a gate insulating layer, S3 is a transmittance curve of a composite structure of an ITO thin film and a CNT thin film, S4 is a transmittance curve of a composite structure of an ITO thin film, a gate insulating layer and a CNT thin film, and S5 is a transmittance curve of OLET, and it can be seen that OLET prepared in this embodiment is transparent.
Fig. 4 is a schematic view of a current-voltage characteristic curve of an organic light emitting transistor according to an embodiment of the present invention, as shown in fig. 4, when a voltage between a source and a drain is constant (20V), a function of turning on a switching current of an OFET field effect transistor can be performed when an applied gate voltage reaches a certain intensity, and then the light emitting intensity of a device is controlled by adjusting the current of the source and drain voltages, and the current-to-switching ratio of the device is about 10-4。
FIG. 5 is a graph showing the luminance-voltage characteristics of an OLED according to an embodiment of the present invention, showing that the maximum luminance of OLET light emission at the bottom (ITO side) and the top (Mg: Ag electrode side) reaches 276cd/m respectively at a gate voltage of 30V2And 365cd/m2And high luminous efficiency can be realized under low working voltage.
Embodiments of the present invention provide a display device including the organic light emitting transistor as described above. The display device of the present embodiment can realize double-sided light emission. The display device includes but is not limited to: radio frequency unit, network module, audio output unit, input unit, sensor, display unit, user input unit, interface unit, memory, processor, and power supply. It will be appreciated by those skilled in the art that the above described configuration of the display device does not constitute a limitation of the display device, and that the display device may comprise more or less of the components described above, or some components may be combined, or a different arrangement of components. In the embodiment of the present invention, the display device includes, but is not limited to, a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.
The display device may be: the display device comprises a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and any other product or component with a display function, wherein the display device further comprises a flexible circuit board, a printed circuit board and a back plate.
The embodiment of the invention provides a manufacturing method of an organic light-emitting transistor, which comprises the following steps:
preparing a grid electrode, a grid insulating layer, a first pole, an active layer and a second pole which are sequentially stacked;
the grid electrode, the first electrode and the second electrode are transparent, and the active layer comprises a hole transport layer, a light emitting layer and an electron transport layer which are sequentially stacked.
The organic material has natural low carrier mobility, and the OFET in the traditional transverse structure is limited by the channel length, so that the OLET adopting the structure has low response speed, high working voltage, low aperture ratio and low luminous efficiency, and the application of the OFET in flat panel display is limited. In this embodiment, the organic light emitting transistor includes a gate electrode, a gate insulating layer, a first electrode, an active layer, and a second electrode, which are sequentially stacked, and the organic light emitting transistor has a vertical structure, is not limited by a length of a channel, has advantages of a short channel, a low gate voltage, a large light emitting area, and the like, can realize high current output at a low operating voltage, and has high light emitting efficiency.
The embodiment adopts the organic light emitting transistor with the vertical structure, integrates the light emitting unit and the control unit together, realizes the multifunction and high integration of the light emitting device, and can reduce the preparation difficulty of the active matrix driving device.
In some embodiments, the organic light emitting transistor adopts a bottom gate structure, the first electrode is a source electrode, the second electrode is a drain electrode, and the preparing of the gate electrode, the gate insulating layer, the first electrode, the active layer and the second electrode, which are sequentially stacked, specifically includes:
step 1, providing a substrate;
the substrate may be a glass substrate or a quartz substrate.
Step 2, preparing a grid electrode on the substrate;
in particular, a layer of transparent conductive material, such as ITO, may be formed on the substrate and patterned to form the gate electrode.
Step 3, preparing a gate insulating layer by using a chemical vapor deposition method;
for example, silicon nitride is deposited to a thickness of 1500 angstroms as the gate insulating layer by chemical vapor deposition.
Step 4, preparing a mesh source electrode by adopting a dipping and pulling method;
when the source electrode adopts CNT, the grid source electrode is prepared by adopting a dipping and pulling method, and the film thickness is about
Figure BDA0003321263200000081
The surface of the film is required to be rough and discontinuous so as to ensure higher light transmittance and larger contact potential barrier with the active layer; when the source electrode adopts a nano silver wire, the source electrode is prepared by adopting a spin coating method; when the source electrode adopts a graphene film, the source electrode is prepared by a stripping method.
Step 5, sequentially evaporating a hole transport layer, a luminescent layer and an electron transport layer on the source electrode by adopting a vacuum evaporation method;
sequentially evaporating a hole transport layer (with a thickness of
Figure BDA0003321263200000091
) A light emitting layer (thickness of
Figure BDA0003321263200000092
) And an electron transport layer (thickness of
Figure BDA0003321263200000093
)。
And 6, evaporating and plating a drain electrode on the electron transport layer.
Depositing Mg Ag transparent electrode as drain electrode (thickness of
Figure BDA0003321263200000094
) The bottom grid verticality with double-sided light emission can be obtained through the stepsStructure OLET.
In some embodiments, the organic light emitting transistor adopts a top gate structure, which is different from a bottom gate structure, and the top gate structure OLET may damage the temperature difference resistant active layer when the gate insulating layer and the gate electrode are prepared at a high temperature, so that the gate insulating layer and the gate electrode are prepared by vacuum evaporation. The embodiment has the advantages that the process preparation procedure can be simplified, the preparation process can be completed in a vacuum chamber at one time, and impurity contamination possibly caused by the environmental change of the preparation process is reduced. In addition, the thickness of each layer of film, especially the thickness of the gate insulating layer, can be accurately controlled by adopting an evaporation process, so that the working voltage range of the device is controlled, and the design requirements are met.
In this embodiment, the step of preparing the gate electrode, the gate insulating layer, the first electrode, the active layer, and the second electrode, which are sequentially stacked, specifically includes:
step 1, providing a substrate;
the substrate may be a glass substrate or a quartz substrate.
Step 2, preparing a mesh source electrode on the substrate;
when the source electrode adopts CNT, the grid source electrode is prepared by adopting a dipping and pulling method, and the film thickness is about
Figure BDA00033212632000000910
The surface of the film is required to be rough and discontinuous so as to ensure higher light transmittance and larger contact potential barrier with the active layer; when the source electrode adopts a nano silver wire, the source electrode is prepared by adopting a spin coating method; when the source electrode adopts a graphene film, the source electrode is prepared by a stripping method.
Step 3, sequentially evaporating a hole transport layer, a luminescent layer and an electron transport layer on the source electrode by adopting a vacuum evaporation method;
sequentially evaporating a hole transport layer (with a thickness of
Figure BDA0003321263200000095
) A light emitting layer (thickness of
Figure BDA0003321263200000096
) And an electron transport layer (thickness of
Figure BDA0003321263200000097
)。
Step 4, evaporating and plating a drain electrode on the electron transport layer;
depositing Mg Ag transparent electrode as drain electrode (thickness of
Figure BDA0003321263200000098
)。
Step 5, preparing a gate insulating layer on the drain electrode by using a chemical vapor deposition method;
evaporating CaF on the transparent Mg-Ag electrode by vacuum evaporation2(thickness of
Figure BDA0003321263200000099
) As a gate insulating layer.
And 6, preparing a grid electrode on the grid insulation layer.
Depositing Mg-Ag transparent electrode (thickness of
Figure BDA0003321263200000101
) And as a grid electrode, obtaining the double-sided light-emitting top grid vertical structure OLET through the steps.
In the embodiments of the methods of the present invention, the sequence numbers of the steps are not used to limit the sequence of the steps, and for those skilled in the art, the sequence of the steps is not changed without creative efforts.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is simple, and the relevant points can be referred to the partial description of the product embodiments.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (11)

1. An organic light emitting transistor, comprising:
the grid electrode, the first pole and the second pole are transparent, and the active layer comprises a hole transport layer, a light emitting layer and an electron transport layer which are sequentially stacked.
2. The organic light emitting transistor according to claim 1, wherein the first electrode is a source electrode, the second electrode is a drain electrode, and the organic light emitting transistor specifically comprises:
a gate electrode;
a gate insulating layer;
a source electrode;
a hole transport layer;
a light emitting layer;
an electron transport layer;
and a drain electrode.
3. The organic light emitting transistor according to claim 1, wherein the first electrode is a drain electrode, the second electrode is a source electrode, and the organic light emitting transistor specifically comprises:
a gate electrode;
a gate insulating layer;
a drain electrode;
an electron transport layer;
a light emitting layer;
a hole transport layer;
and a source electrode.
4. An organic light-emitting transistor according to claim 2 or 3, wherein the source electrode is in the form of a grid.
5. The organic light-emitting transistor according to claim 2 or 3, wherein any one of the following is used for the source electrode: carbon nanotubes, silver nanowires, single-layer graphene films.
6. The organic light-emitting transistor according to claim 2 or 3, wherein an alloy of Mg and Ag is used for the drain electrode.
7. The organic light-emitting transistor according to claim 1, wherein the gate electrode is made of a transparent conductive material.
8. A display device comprising the organic light-emitting transistor according to any one of claims 1 to 7.
9. A method of fabricating an organic light emitting transistor, comprising:
preparing a grid electrode, a grid insulating layer, a first pole, an active layer and a second pole which are sequentially stacked;
the grid electrode, the first electrode and the second electrode are transparent, and the active layer comprises a hole transport layer, a light emitting layer and an electron transport layer which are sequentially stacked.
10. The method of claim 9, wherein the step of preparing the gate electrode, the gate insulating layer, the first electrode, the active layer and the second electrode sequentially stacked comprises:
providing a substrate;
preparing a grid electrode on the substrate;
preparing a gate insulating layer by using a chemical vapor deposition method;
preparing a mesh source electrode by adopting a dipping and pulling method;
sequentially evaporating a hole transport layer, a luminescent layer and an electron transport layer on the source electrode by adopting a vacuum evaporation method;
and evaporating and plating a drain electrode on the electron transport layer.
11. The method of claim 9, wherein the step of preparing the gate electrode, the gate insulating layer, the first electrode, the active layer and the second electrode sequentially stacked comprises:
providing a substrate;
preparing a mesh-shaped source electrode on the substrate;
sequentially evaporating a hole transport layer, a luminescent layer and an electron transport layer on the source electrode by adopting a vacuum evaporation method;
evaporating and plating a drain electrode on the electron transport layer;
evaporating a gate insulating layer on the drain electrode;
and preparing a grid electrode on the grid insulating layer.
CN202111246673.1A 2021-10-26 2021-10-26 Organic light emitting transistor, manufacturing method thereof and display device Pending CN113964278A (en)

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